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NRVB1H100SFT3G NRVB1H100SFT3G onsemi mbr1h100sf-d.pdf Description: DIODE SCHOTTKY 100V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 100 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+8.60 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
NRVBA320T3G NRVBA320T3G onsemi mbra320-d.pdf Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
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NRVBB1645T4G NRVBB1645T4G onsemi mbr1635-d.pdf Description: DIODE SCHOTTKY 45V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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NRVHPM220T3G NRVHPM220T3G onsemi nhpm220-d.pdf Description: DIODE STANDARD 200V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
12000+13.51 грн
Мінімальне замовлення: 12000
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NRVTS10100EMFST3G NRVTS10100EMFST3G onsemi nts10100emfs-d.pdf Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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NRVTS10120MFST3G NRVTS10120MFST3G onsemi nts10120mfs-d.pdf Description: DIODE SCHOTTKY 120V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 120 V
Qualification: AEC-Q101
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NRVTS12100MFST3G NRVTS12100MFST3G onsemi nts12100mfs-d.pdf Description: DIODE SCHOTTKY 100V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 12 A
Current - Reverse Leakage @ Vr: 95 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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NRVTS1545EMFST3G NRVTS1545EMFST3G onsemi nts1545emfs-d.pdf Description: DIODE SCHOTTKY 45V 15A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Qualification: AEC-Q101
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NRVTS245ESFT3G NRVTS245ESFT3G onsemi nrvts245esf-d.pdf Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 75 µA @ 45 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
10000+8.36 грн
30000+7.94 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
NRVTS260ESFT3G NRVTS260ESFT3G onsemi nts260esf-d.pdf Description: DIODE SCHOTTKY 60V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
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NSIC2030JBT3G NSIC2030JBT3G onsemi nsic2030jb-d.pdf Description: IC CURRENT REGULATOR 15% SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 120V
Current - Output: 30mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: SMB
Part Status: Active
на замовлення 42500 шт:
термін постачання 21-31 дні (днів)
2500+18.81 грн
5000+16.60 грн
7500+15.83 грн
12500+14.05 грн
17500+13.60 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NSIC2050JBT3G NSIC2050JBT3G onsemi nsic2050jb-d.pdf Description: IC CURRENT REGULATOR 15% SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 120V
Current - Output: 50mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: SMB
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27500 шт:
термін постачання 21-31 дні (днів)
2500+18.81 грн
5000+16.60 грн
7500+15.83 грн
12500+14.05 грн
17500+13.60 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NSR01L30MXT5G NSR01L30MXT5G onsemi nsr01l30mx-d.pdf Description: DIODE SCHOTTKY 30V 100MA 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
10000+3.31 грн
20000+3.18 грн
Мінімальне замовлення: 10000
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NSV45090JDT4G NSV45090JDT4G onsemi nsi45090jd-d.pdf Description: IC CURRENT REGULATOR 15% DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 160mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: DPAK
Grade: Automotive
Qualification: AEC-Q101
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NSVBAS16WT3G NSVBAS16WT3G onsemi bas16wt1-d.pdf Description: DIODE STANDARD 100V 200MA SC703
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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NSVBC846BM3T5G NSVBC846BM3T5G onsemi bc846bm3-d.pdf Description: TRANS NPN 65V 0.1A SOT-723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 265 mW
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
8000+3.54 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
NSVBC847BLT3G NSVBC847BLT3G onsemi bc846alt1-d.pdf Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+4.39 грн
Мінімальне замовлення: 10000
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NSVBC856BM3T5G NSVBC856BM3T5G onsemi bc856bm3-d.pdf Description: TRANS PNP 65V 0.1A SOT-723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 265 mW
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
8000+3.54 грн
16000+3.09 грн
24000+2.93 грн
40000+2.58 грн
56000+2.49 грн
80000+2.39 грн
Мінімальне замовлення: 8000
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NSVMMBT5087LT3G NSVMMBT5087LT3G onsemi mmbt5087lt1-d.pdf Description: TRANS PNP 50V 0.05A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 225 mW
Grade: Automotive
Qualification: AEC-Q101
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NSVMMUN2113LT3G NSVMMUN2113LT3G onsemi dta144e-d.pdf Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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NSVMUN5211DW1T3G NSVMUN5211DW1T3G onsemi dtc114ed-d.pdf Description: TRANS PREBIAS 2NPN 50V SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
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NSVMUN5213DW1T3G NSVMUN5213DW1T3G onsemi dtc144ed-d.pdf Description: TRANS NPN 50V DUAL BIPO SC88-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+3.51 грн
Мінімальне замовлення: 10000
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NTMFD4C85NT3G NTMFD4C85NT3G onsemi NTMFD4C85N.pdf Description: MOSFET 2N-CH 30V 15.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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NTMFD4C86NT3G NTMFD4C86NT3G onsemi NTMFD4C86N.pdf Description: MOSFET 2N-CH 30V 11.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A
Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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NTMFD4C87NT3G NTMFD4C87NT3G onsemi NTMFD4C87N.pdf Description: MOSFET 2N-CH 30V 11.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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NTMFD4C88NT3G NTMFD4C88NT3G onsemi NTMFD4C88N.pdf Description: MOSFET 2N-CH 30V 11.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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NTMFS4982NFT3G NTMFS4982NFT3G onsemi ntmfs4982nf-d.pdf Description: MOSFET N-CH 30V 26.5A/207A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 207A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
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NTMFS4C03NT3G NTMFS4C03NT3G onsemi ntmfs4c03n-d.pdf Description: MOSFET N-CH 30V 30A/136A 5DFN
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NTMFS4H01NFT3G NTMFS4H01NFT3G onsemi ntmfs4h01nf-d.pdf Description: MOSFET N-CH 25V 54A/334A 5DFN
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NTMFS4H01NT3G NTMFS4H01NT3G onsemi ntmfs4h01n-d.pdf Description: MOSFET N-CH 25V 54A/334A 5DFN
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NTNS3190NZT5G NTNS3190NZT5G onsemi NTNS3190NZ.pdf Description: MOSFET N-CH 20V 224MA 3XLLGA
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V
Power Dissipation (Max): 120mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 3-XLLGA (0.62x0.62)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V
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NTS10100EMFST3G NTS10100EMFST3G onsemi nts10100emfs-d.pdf Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
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NTS10100MFST3G NTS10100MFST3G onsemi nts10100mfs-d.pdf Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
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NTS10120EMFST3G NTS10120EMFST3G onsemi nts10120emfs-d.pdf Description: DIODE SCHOTTKY 120V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 120 V
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NTS10120MFST3G NTS10120MFST3G onsemi nts10120mfs-d.pdf Description: DIODE SCHOTTKY 120V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 120 V
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NTS1045MFST3G NTS1045MFST3G onsemi nts1045mfs-d.pdf Description: DIODE SCHOTTKY 45V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
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NTS12100EMFST3G NTS12100EMFST3G onsemi nts12100emfs-d.pdf Description: DIODE SCHOTTKY 100V 12A 5DFN
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NTS12100MFST3G NTS12100MFST3G onsemi nts12100mfs-d.pdf Description: DIODE SCHOTTKY 100V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 100 V
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NTS12120EMFST3G NTS12120EMFST3G onsemi nts12120emfs-d.pdf Description: DIODE SCHOTTKY 120V 12A 5DFN
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NTS12120MFST1G NTS12120MFST1G onsemi nts12120mfs-d.pdf Description: DIODE SCHOTTKY 120V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 100 V
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NTS12120MFST3G NTS12120MFST3G onsemi nts12120mfs-d.pdf Description: DIODE SCHOTTKY 120V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 100 V
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NTS1245MFST3G NTS1245MFST3G onsemi nts1245mfs-d.pdf Description: DIODE SCHOTTKY 45V 12A 5DFN
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NTS1545MFST3G NTS1545MFST3G onsemi nts1545mfs-d.pdf Description: DIODE SCHOTTKY 45V 15A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
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NTS260SFT3G NTS260SFT3G onsemi nts260sf-d.pdf Description: DIODE SCHOTTKY 60V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
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NTSB30U100CTT4G NTSB30U100CTT4G onsemi ntst30u100ct-d.pdf Description: DIODE ARR SCHOTT 100V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 675 µA @ 100 V
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NTUD3174NZT5G NTUD3174NZT5G onsemi NTUD3174NZ.PDF Description: MOSFET 2N-CH 20V 0.22A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: SOT-963
на замовлення 56000 шт:
термін постачання 21-31 дні (днів)
8000+16.07 грн
Мінімальне замовлення: 8000
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NVD6495NLT4G-VF01 NVD6495NLT4G-VF01 onsemi nvd6495nl-d.pdf Description: MOSFET N-CH 100V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+39.91 грн
Мінімальне замовлення: 2500
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NVMFS4C01NT3G NVMFS4C01NT3G onsemi nvmfs4c01n-d.pdf Description: MOSFET N-CH 30V 49A/319A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Qualification: AEC-Q101
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NVMFS4C01NWFT3G NVMFS4C01NWFT3G onsemi nvmfs4c01n-d.pdf Description: MOSFET N-CH 30V 49A/319A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Qualification: AEC-Q101
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NVMFS5C404NLT3G NVMFS5C404NLT3G onsemi nvmfs5c404nl-d.pdf Description: MOSFET N-CH 40V 49A/352A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS5C404NLWFT3G NVMFS5C404NLWFT3G onsemi nvmfs5c404nl-d.pdf Description: MOSFET N-CH 40V 49A/352A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS5C410NLT3G NVMFS5C410NLT3G onsemi nvmfs5c410nl-d.pdf Description: MOSFET N-CH 40V 48A/315A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 315A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C410NLWFT3G NVMFS5C410NLWFT3G onsemi nvmfs5c410nl-d.pdf Description: MOSFET N-CH 40V 48A/315A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 315A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C612NLT3G NVMFS5C612NLT3G onsemi nvmfs5c612nl-d.pdf Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C612NLWFT3G NVMFS5C612NLWFT3G onsemi nvmfs5c612nl-d.pdf Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
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PCA9654EDR2G PCA9654EDR2G onsemi pca9654e-d.pdf Description: IC XPNDR 100KHZ I2C 16SOIC
Packaging: Tape & Reel (TR)
Features: POR
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
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PCA9654EDTR2G PCA9654EDTR2G onsemi pca9654e-d.pdf Description: IC XPNDR 100KHZ I2C 16TSSOP
Packaging: Tape & Reel (TR)
Features: POR
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 16-TSSOP
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+110.76 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SC431ILPRAG SC431ILPRAG onsemi tl431-d.pdf Description: IC VREF SHUNT ADJ 2.2% TO92
Packaging: Tape & Reel (TR)
Tolerance: ±2.2%
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 100 mA
Current - Output: 40 µA
Voltage - Output (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
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SCY99102BDR2G onsemi Description: IC PFC CTRLR
Packaging: Tape & Reel (TR)
товару немає в наявності
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SFT1452-TL-W SFT1452-TL-W onsemi SFT1452.pdf Description: MOSFET N-CH 250V 3A DPAK/TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: DPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 20 V
товару немає в наявності
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NRVB1H100SFT3G mbr1h100sf-d.pdf
NRVB1H100SFT3G
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 100 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+8.60 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
NRVBA320T3G mbra320-d.pdf
NRVBA320T3G
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 3A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 20 V
Qualification: AEC-Q101
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NRVBB1645T4G mbr1635-d.pdf
NRVBB1645T4G
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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NRVHPM220T3G nhpm220-d.pdf
NRVHPM220T3G
Виробник: onsemi
Description: DIODE STANDARD 200V 2A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12000+13.51 грн
Мінімальне замовлення: 12000
В кошику  од. на суму  грн.
NRVTS10100EMFST3G nts10100emfs-d.pdf
NRVTS10100EMFST3G
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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NRVTS10120MFST3G nts10120mfs-d.pdf
NRVTS10120MFST3G
Виробник: onsemi
Description: DIODE SCHOTTKY 120V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 120 V
Qualification: AEC-Q101
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NRVTS12100MFST3G nts12100mfs-d.pdf
NRVTS12100MFST3G
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 12 A
Current - Reverse Leakage @ Vr: 95 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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NRVTS1545EMFST3G nts1545emfs-d.pdf
NRVTS1545EMFST3G
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 15A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Qualification: AEC-Q101
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NRVTS245ESFT3G nrvts245esf-d.pdf
NRVTS245ESFT3G
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 75 µA @ 45 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+8.36 грн
30000+7.94 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
NRVTS260ESFT3G nts260esf-d.pdf
NRVTS260ESFT3G
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
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NSIC2030JBT3G nsic2030jb-d.pdf
NSIC2030JBT3G
Виробник: onsemi
Description: IC CURRENT REGULATOR 15% SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 120V
Current - Output: 30mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: SMB
Part Status: Active
на замовлення 42500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+18.81 грн
5000+16.60 грн
7500+15.83 грн
12500+14.05 грн
17500+13.60 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NSIC2050JBT3G nsic2050jb-d.pdf
NSIC2050JBT3G
Виробник: onsemi
Description: IC CURRENT REGULATOR 15% SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 120V
Current - Output: 50mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: SMB
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+18.81 грн
5000+16.60 грн
7500+15.83 грн
12500+14.05 грн
17500+13.60 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NSR01L30MXT5G nsr01l30mx-d.pdf
NSR01L30MXT5G
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 100MA 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+3.31 грн
20000+3.18 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
NSV45090JDT4G nsi45090jd-d.pdf
NSV45090JDT4G
Виробник: onsemi
Description: IC CURRENT REGULATOR 15% DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 160mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: DPAK
Grade: Automotive
Qualification: AEC-Q101
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NSVBAS16WT3G bas16wt1-d.pdf
NSVBAS16WT3G
Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SC703
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
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NSVBC846BM3T5G bc846bm3-d.pdf
NSVBC846BM3T5G
Виробник: onsemi
Description: TRANS NPN 65V 0.1A SOT-723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 265 mW
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+3.54 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
NSVBC847BLT3G bc846alt1-d.pdf
NSVBC847BLT3G
Виробник: onsemi
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+4.39 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
NSVBC856BM3T5G bc856bm3-d.pdf
NSVBC856BM3T5G
Виробник: onsemi
Description: TRANS PNP 65V 0.1A SOT-723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 265 mW
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+3.54 грн
16000+3.09 грн
24000+2.93 грн
40000+2.58 грн
56000+2.49 грн
80000+2.39 грн
Мінімальне замовлення: 8000
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NSVMMBT5087LT3G mmbt5087lt1-d.pdf
NSVMMBT5087LT3G
Виробник: onsemi
Description: TRANS PNP 50V 0.05A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 225 mW
Grade: Automotive
Qualification: AEC-Q101
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NSVMMUN2113LT3G dta144e-d.pdf
NSVMMUN2113LT3G
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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NSVMUN5211DW1T3G dtc114ed-d.pdf
NSVMUN5211DW1T3G
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
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NSVMUN5213DW1T3G dtc144ed-d.pdf
NSVMUN5213DW1T3G
Виробник: onsemi
Description: TRANS NPN 50V DUAL BIPO SC88-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+3.51 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
NTMFD4C85NT3G NTMFD4C85N.pdf
NTMFD4C85NT3G
Виробник: onsemi
Description: MOSFET 2N-CH 30V 15.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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NTMFD4C86NT3G NTMFD4C86N.pdf
NTMFD4C86NT3G
Виробник: onsemi
Description: MOSFET 2N-CH 30V 11.3A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A
Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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NTMFD4C87NT3G NTMFD4C87N.pdf
NTMFD4C87NT3G
Виробник: onsemi
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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NTMFD4C88NT3G NTMFD4C88N.pdf
NTMFD4C88NT3G
Виробник: onsemi
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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NTMFS4982NFT3G ntmfs4982nf-d.pdf
NTMFS4982NFT3G
Виробник: onsemi
Description: MOSFET N-CH 30V 26.5A/207A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 207A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
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NTMFS4C03NT3G ntmfs4c03n-d.pdf
NTMFS4C03NT3G
Виробник: onsemi
Description: MOSFET N-CH 30V 30A/136A 5DFN
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NTMFS4H01NFT3G ntmfs4h01nf-d.pdf
NTMFS4H01NFT3G
Виробник: onsemi
Description: MOSFET N-CH 25V 54A/334A 5DFN
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NTMFS4H01NT3G ntmfs4h01n-d.pdf
NTMFS4H01NT3G
Виробник: onsemi
Description: MOSFET N-CH 25V 54A/334A 5DFN
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NTNS3190NZT5G NTNS3190NZ.pdf
NTNS3190NZT5G
Виробник: onsemi
Description: MOSFET N-CH 20V 224MA 3XLLGA
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V
Power Dissipation (Max): 120mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 3-XLLGA (0.62x0.62)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V
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NTS10100EMFST3G nts10100emfs-d.pdf
NTS10100EMFST3G
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
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NTS10100MFST3G nts10100mfs-d.pdf
NTS10100MFST3G
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
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NTS10120EMFST3G nts10120emfs-d.pdf
NTS10120EMFST3G
Виробник: onsemi
Description: DIODE SCHOTTKY 120V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 120 V
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NTS10120MFST3G nts10120mfs-d.pdf
NTS10120MFST3G
Виробник: onsemi
Description: DIODE SCHOTTKY 120V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 30 µA @ 120 V
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NTS1045MFST3G nts1045mfs-d.pdf
NTS1045MFST3G
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
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NTS12100EMFST3G nts12100emfs-d.pdf
NTS12100EMFST3G
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 12A 5DFN
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NTS12100MFST3G nts12100mfs-d.pdf
NTS12100MFST3G
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 100 V
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NTS12120EMFST3G nts12120emfs-d.pdf
NTS12120EMFST3G
Виробник: onsemi
Description: DIODE SCHOTTKY 120V 12A 5DFN
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NTS12120MFST1G nts12120mfs-d.pdf
NTS12120MFST1G
Виробник: onsemi
Description: DIODE SCHOTTKY 120V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 100 V
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NTS12120MFST3G nts12120mfs-d.pdf
NTS12120MFST3G
Виробник: onsemi
Description: DIODE SCHOTTKY 120V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Current - Reverse Leakage @ Vr: 55 µA @ 100 V
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NTS1245MFST3G nts1245mfs-d.pdf
NTS1245MFST3G
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 12A 5DFN
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NTS1545MFST3G nts1545mfs-d.pdf
NTS1545MFST3G
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 15A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
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NTS260SFT3G nts260sf-d.pdf
NTS260SFT3G
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
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NTSB30U100CTT4G ntst30u100ct-d.pdf
NTSB30U100CTT4G
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 675 µA @ 100 V
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NTUD3174NZT5G NTUD3174NZ.PDF
NTUD3174NZT5G
Виробник: onsemi
Description: MOSFET 2N-CH 20V 0.22A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: SOT-963
на замовлення 56000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+16.07 грн
Мінімальне замовлення: 8000
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NVD6495NLT4G-VF01 nvd6495nl-d.pdf
NVD6495NLT4G-VF01
Виробник: onsemi
Description: MOSFET N-CH 100V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+39.91 грн
Мінімальне замовлення: 2500
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NVMFS4C01NT3G nvmfs4c01n-d.pdf
NVMFS4C01NT3G
Виробник: onsemi
Description: MOSFET N-CH 30V 49A/319A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Qualification: AEC-Q101
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NVMFS4C01NWFT3G nvmfs4c01n-d.pdf
NVMFS4C01NWFT3G
Виробник: onsemi
Description: MOSFET N-CH 30V 49A/319A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Qualification: AEC-Q101
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NVMFS5C404NLT3G nvmfs5c404nl-d.pdf
NVMFS5C404NLT3G
Виробник: onsemi
Description: MOSFET N-CH 40V 49A/352A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS5C404NLWFT3G nvmfs5c404nl-d.pdf
NVMFS5C404NLWFT3G
Виробник: onsemi
Description: MOSFET N-CH 40V 49A/352A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS5C410NLT3G nvmfs5c410nl-d.pdf
NVMFS5C410NLT3G
Виробник: onsemi
Description: MOSFET N-CH 40V 48A/315A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 315A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C410NLWFT3G nvmfs5c410nl-d.pdf
NVMFS5C410NLWFT3G
Виробник: onsemi
Description: MOSFET N-CH 40V 48A/315A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 315A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C612NLT3G nvmfs5c612nl-d.pdf
NVMFS5C612NLT3G
Виробник: onsemi
Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C612NLWFT3G nvmfs5c612nl-d.pdf
NVMFS5C612NLWFT3G
Виробник: onsemi
Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
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PCA9654EDR2G pca9654e-d.pdf
PCA9654EDR2G
Виробник: onsemi
Description: IC XPNDR 100KHZ I2C 16SOIC
Packaging: Tape & Reel (TR)
Features: POR
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
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PCA9654EDTR2G pca9654e-d.pdf
PCA9654EDTR2G
Виробник: onsemi
Description: IC XPNDR 100KHZ I2C 16TSSOP
Packaging: Tape & Reel (TR)
Features: POR
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 16-TSSOP
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+110.76 грн
Мінімальне замовлення: 2500
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SC431ILPRAG tl431-d.pdf
SC431ILPRAG
Виробник: onsemi
Description: IC VREF SHUNT ADJ 2.2% TO92
Packaging: Tape & Reel (TR)
Tolerance: ±2.2%
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 100 mA
Current - Output: 40 µA
Voltage - Output (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
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SCY99102BDR2G
Виробник: onsemi
Description: IC PFC CTRLR
Packaging: Tape & Reel (TR)
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SFT1452-TL-W SFT1452.pdf
SFT1452-TL-W
Виробник: onsemi
Description: MOSFET N-CH 250V 3A DPAK/TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: DPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 20 V
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