| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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MT9V034C12STM-DP | onsemi |
Description: SENSOR IMAGE VGA MONO 48-CLCCPackaging: Tray Package / Case: 48-CLCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Pixel Size: 6µm x 6µm Active Pixel Array: 752H x 480V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
на замовлення 3023 шт: термін постачання 21-31 дні (днів) |
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MT9V034C12STM-DR | onsemi |
Description: SENSOR IMAGE VGA MONO 48-CLCCPackaging: Tray Package / Case: 48-CLCC Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Pixel Size: 6µm x 6µm Active Pixel Array: 752H x 480V Supplier Device Package: 48-CLCC (11.43x11.43) Grade: Automotive Frames per Second: 60.0 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MT9V034C12STM-DR1 | onsemi |
Description: SENSOR IMAGE VGA MONO 48-CLCCPackaging: Tray Package / Case: 48-CLCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Pixel Size: 6µm x 6µm Active Pixel Array: 752H x 480V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MT9V034C12STM-TP | onsemi |
Description: SENSOR IMAGE VGA MONO 48-CLCC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||
| MT9V034C12STM-TR | onsemi |
Description: SENSOR IMAGE VGA MONO 48-CLCC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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AR0130CSSC00SPBA0-DR | onsemi |
Description: IMAGE SENSOR RGB CMOSPackaging: Tray Package / Case: 48-LCC Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-PLCC (11.43x11.43) Grade: Automotive Frames per Second: 45.0 Qualification: AEC-Q100 |
на замовлення 1011 шт: термін постачання 21-31 дні (днів) |
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AR0134CSSC00SPCA0-DRBR | onsemi |
Description: IMAGE SENSOR RGB CMOSPackaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Part Status: Last Time Buy Frames per Second: 54 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0134CSSC00SPCA0-TPBR | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Tape & Reel (TR) Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Part Status: Last Time Buy Frames per Second: 54 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0134CSSC00SPCA0-TRBR | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Tape & Reel (TR) Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Part Status: Obsolete Frames per Second: 54 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0134CSSC00SUEA0-DPBR | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Last Time Buy Frames per Second: 54 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0134CSSC00SUEA0-DRBR | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Last Time Buy Frames per Second: 54 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0134CSSC00SUEA0-TRBR | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 54 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0134CSSM00SPCA0-TPBR | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Tape & Reel (TR) Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Part Status: Obsolete Frames per Second: 54 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0134CSSM00SPCA0-TRBR | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Tape & Reel (TR) Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Part Status: Obsolete Frames per Second: 54 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0134CSSM00SUEA0-TPBR | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Last Time Buy Frames per Second: 54 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0134CSSM00SUEA0-TRBR | onsemi |
Description: IMAGE SENSOR MONO CMOSPackaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 54 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MT9J003I12STMU-DP | onsemi |
Description: SNSR IMAGE DGTL HISPI 48-LCCPackaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 1.67µm x 1.67µm Active Pixel Array: 3856H x 2764V Supplier Device Package: 48-ILCC (10x10) Part Status: Active Frames per Second: 30.0 |
на замовлення 2025 шт: термін постачання 21-31 дні (днів) |
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MT9M021IA3XTC-DPBR | onsemi |
Description: SENSOR IMAGE CMOS Packaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Frames per Second: 45.0 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MT9M024IA3XTM-DRBR | onsemi |
Description: SENSOR IMAGE 1.6MP CMOS 48-LCCPackaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 45 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MT9M031I12STM-DPBR | onsemi |
Description: SENSOR IMAGE 1.6MP CMOS 48-LCC Packaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Frames per Second: 45.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MT9M031I12STM-DRBR | onsemi |
Description: SENSOR IMAGE 1.6MP CMOS 48-LCC Packaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Frames per Second: 45.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MT9M034I12STM-DRBR | onsemi |
Description: EVAL BOARD FOR MT9M034I12STMPackaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Frames per Second: 45.0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MT9V034C12STC-DP | onsemi |
Description: SENSOR IMAGE VGA COLOR 48CLCCPackaging: Tray Package / Case: 48-CLCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Pixel Size: 6µm x 6µm Active Pixel Array: 752H x 480V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
товару немає в наявності |
Мінімальне замовлення: 1520 шт В кошику од. на суму грн. | ||||||||||||||
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MT9V034C12STC-DR | onsemi |
Description: SENSOR IMAGE VGA COLOR 48CLCCPackaging: Tray Package / Case: 48-CLCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Pixel Size: 6µm x 6µm Active Pixel Array: 752H x 480V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60.0 |
на замовлення 1669 шт: термін постачання 21-31 дні (днів) |
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MT9V126IA3XTC-DR | onsemi |
Description: SENSOR IMAGE VGA SOC 9X9BGAPackaging: Tray Package / Case: 63-LBGA Type: CMOS Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 5.6µm x 5.6µm Supplier Device Package: 63-IBGA (9x9) Frames per Second: 60 |
на замовлення 2600 шт: термін постачання 21-31 дні (днів) |
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MT9V128IA3XTC-DR | onsemi |
Description: SENSOR IMAGEPackaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 5.6µm x 5.6µm Active Pixel Array: 680H x 512V Supplier Device Package: 63-IBGA (9x9) Part Status: Not For New Designs Frames per Second: 60.0 |
на замовлення 73 шт: термін постачання 21-31 дні (днів) |
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| MT9V138C12STC-DR | onsemi |
Description: SENSOR IMAGE Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDD86369-F085 | onsemi |
Description: MOSFET N-CH 80V 90A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 37500 шт: термін постачання 21-31 дні (днів) |
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FDBL86563-F085 | onsemi |
Description: MOSFET N-CH 60V 240A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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FDD86369-F085 | onsemi |
Description: MOSFET N-CH 80V 90A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 39725 шт: термін постачання 21-31 дні (днів) |
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FDBL86563-F085 | onsemi |
Description: MOSFET N-CH 60V 240A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 14295 шт: термін постачання 21-31 дні (днів) |
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FGH40T65SH-F155 | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19.2ns/65.6ns Switching Energy: 1.01mJ (on), 297µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 72.2 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 268 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN73893MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 28SOICPackaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 50ns, 30ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 350mA, 650mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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FAN8841MPX | onsemi |
Description: IC HALF BRIDGE DRIVER 24MLPPackaging: Tape & Reel (TR) Package / Case: 24-WFQFN Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 2.7V ~ 5.5V Applications: DC-DC Converters Technology: Power MOSFET Voltage - Load: 13V ~ 60V Supplier Device Package: 24-MLP (4x4) Fault Protection: ESD, Over Voltage, UVLO Load Type: Inductive Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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FAN73893MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 28SOICPackaging: Cut Tape (CT) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 50ns, 30ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 350mA, 650mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1613 шт: термін постачання 21-31 дні (днів) |
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FAN8841MPX | onsemi |
Description: IC HALF BRIDGE DRIVER 24MLPPackaging: Cut Tape (CT) Package / Case: 24-WFQFN Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 2.7V ~ 5.5V Applications: DC-DC Converters Technology: Power MOSFET Voltage - Load: 13V ~ 60V Supplier Device Package: 24-MLP (4x4) Fault Protection: ESD, Over Voltage, UVLO Load Type: Inductive Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CPH3455-TL-W | onsemi |
Description: MOSFET N-CH 35V 3A 3CPHPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: 3-CPH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 35 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 186 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FS8G | onsemi |
Description: DIODE STANDARD 400V 8A TO2773Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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FS8K | onsemi |
Description: DIODE GEN PURP 800V 8A TO277-3Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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FS8M | onsemi |
Description: DIODE STANDARD 1000V 8A TO2773Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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FS8G | onsemi |
Description: DIODE STANDARD 400V 8A TO2773Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277-3 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 118pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 3.37 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Qualification: AEC-Q101 Grade: Automotive |
на замовлення 12184 шт: термін постачання 21-31 дні (днів) |
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FS8J | onsemi |
Description: DIODE GEN PURP 600V 8A TO277-3Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277-3 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 118pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 3.37 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 4907 шт: термін постачання 21-31 дні (днів) |
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FS8K | onsemi |
Description: DIODE GEN PURP 800V 8A TO277-3Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277-3 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 118pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 3.37 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 3545 шт: термін постачання 21-31 дні (днів) |
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FS8M | onsemi |
Description: DIODE STANDARD 1000V 8A TO2773Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 1000 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277-3 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 118pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 3.37 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN |
на замовлення 32084 шт: термін постачання 21-31 дні (днів) |
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FDMT800120DC | onsemi |
Description: MOSFET N-CH 120V 20A 8DLCOOL88Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-Dual Cool™88 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMT800120DC | onsemi |
Description: MOSFET N-CH 120V 20A 8DLCOOL88Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-Dual Cool™88 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NB3W800LMNG | onsemi |
Description: IC CLOCK ZDB FANOUT BUFFER 48QFNDigiKey Programmable: Not Verified Number of Circuits: 1 Divider/Multiplier: No/No PLL: Yes with Bypass Supplier Device Package: 48-QFN (6x6) Differential - Input:Output: Yes/Yes Ratio - Input:Output: 1:8 Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C Input: Clock Frequency - Max: 133.33MHz Output: HCSL Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tray |
на замовлення 490 шт: термін постачання 21-31 дні (днів) |
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NBA3N200SDG | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NBA3N201SDG | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8SOICOperating Temperature: -40°C ~ 125°C Type: Transceiver Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Part Status: Obsolete Duplex: Half Receiver Hysteresis: 25 mV Supplier Device Package: 8-SOIC Protocol: LVDS, Multipoint Data Rate: 200Mbps Number of Drivers/Receivers: 1/1 Voltage - Supply: 3V ~ 3.6V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NGTG35N65FL2WG | onsemi |
Description: IGBT FIELD STOP 650V 70A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 72ns/132ns Switching Energy: 840µJ (on), 280µJ (off) Test Condition: 400V, 35A, 10Ohm, 15V Gate Charge: 125 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD5004MXTBG | onsemi |
Description: TVS DIODE 3.3VWM 9.1VC 4X3DFNCapacitance @ Frequency: 3.5pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 9.1V Voltage - Breakdown (Min): 3.9V Unidirectional Channels: 4 Supplier Device Package: 4-X3DFN (0.53x0.93) Voltage - Reverse Standoff (Typ): 3.3V (Max) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
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NCL30030B3DR2G | onsemi |
Description: IC LED DRIVER OFFL 16SOICNumber of Outputs: 1 Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads Packaging: Tape & Reel (TR) Part Status: Active Voltage - Supply (Max): 30V Voltage - Supply (Min): 9V Supplier Device Package: 16-SOIC Topology: Flyback Internal Switch(s): No Applications: Lighting, Signage Operating Temperature: -40°C ~ 125°C (TJ) Type: AC DC Offline Switcher |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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NCP51145MNTAG | onsemi |
Description: IC REG LDO DDR 1OUT 8DFNPart Status: Obsolete Supplier Device Package: 8-DFN (2x2) Applications: LDO (Linear), DDR Operating Temperature: -40°C ~ 85°C Voltage - Input: 1V ~ 5.5V Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 8-VFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCS20072DR2G | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 420µA (x2 Channels) Slew Rate: 2.4V/µs Gain Bandwidth Product: 3.2 MHz Current - Input Bias: 5 pA Voltage - Input Offset: 1.3 mV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 2 Current - Output / Channel: 65 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 36 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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NCS20072DTBR2G | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8TSSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 420µA (x2 Channels) Slew Rate: 2.4V/µs Gain Bandwidth Product: 3.2 MHz Current - Input Bias: 5 pA Voltage - Input Offset: 1.3 mV Supplier Device Package: 8-TSSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 65 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 36 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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NTMFS5C423NLT1G | onsemi |
Description: MOSFET N-CH 40V 5DFNInput Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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NTMFS5C670NLT1G | onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
на замовлення 88500 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C670NLT3G | onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C404NT1G | onsemi |
Description: MOSFET N-CH 40V 49A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 378A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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NVMFS5C423NLT1G | onsemi |
Description: MOSFET N-CH 40V 126A 5DFNQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| MT9V034C12STM-DP |
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Виробник: onsemi
Description: SENSOR IMAGE VGA MONO 48-CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: SENSOR IMAGE VGA MONO 48-CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
на замовлення 3023 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1679.22 грн |
| 10+ | 1279.89 грн |
| 25+ | 1212.53 грн |
| 80+ | 979.89 грн |
| 440+ | 916.67 грн |
| MT9V034C12STM-DR |
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Виробник: onsemi
Description: SENSOR IMAGE VGA MONO 48-CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
Description: SENSOR IMAGE VGA MONO 48-CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Grade: Automotive
Frames per Second: 60.0
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| MT9V034C12STM-DR1 |
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Виробник: onsemi
Description: SENSOR IMAGE VGA MONO 48-CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: SENSOR IMAGE VGA MONO 48-CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
товару немає в наявності
В кошику
од. на суму грн.
| MT9V034C12STM-TP |
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Виробник: onsemi
Description: SENSOR IMAGE VGA MONO 48-CLCC
Description: SENSOR IMAGE VGA MONO 48-CLCC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MT9V034C12STM-TR |
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Виробник: onsemi
Description: SENSOR IMAGE VGA MONO 48-CLCC
Description: SENSOR IMAGE VGA MONO 48-CLCC
товару немає в наявності
В кошику
од. на суму грн.
| AR0130CSSC00SPBA0-DR |
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Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-PLCC (11.43x11.43)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-PLCC (11.43x11.43)
Grade: Automotive
Frames per Second: 45.0
Qualification: AEC-Q100
на замовлення 1011 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 575.76 грн |
| 5+ | 500.85 грн |
| 10+ | 481.08 грн |
| 25+ | 429.25 грн |
| 50+ | 414.07 грн |
| 100+ | 400.14 грн |
| 500+ | 366.00 грн |
| AR0134CSSC00SPCA0-DRBR |
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Виробник: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Last Time Buy
Frames per Second: 54
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Last Time Buy
Frames per Second: 54
товару немає в наявності
В кошику
од. на суму грн.
| AR0134CSSC00SPCA0-TPBR |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Last Time Buy
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Last Time Buy
Frames per Second: 54
товару немає в наявності
В кошику
од. на суму грн.
| AR0134CSSC00SPCA0-TRBR |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
товару немає в наявності
В кошику
од. на суму грн.
| AR0134CSSC00SUEA0-DPBR |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
товару немає в наявності
В кошику
од. на суму грн.
| AR0134CSSC00SUEA0-DRBR |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
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| AR0134CSSC00SUEA0-TRBR |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
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| AR0134CSSM00SPCA0-TPBR |
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Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
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| AR0134CSSM00SPCA0-TRBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
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| AR0134CSSM00SUEA0-TPBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
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| AR0134CSSM00SUEA0-TRBR |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
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| MT9J003I12STMU-DP |
![]() |
Виробник: onsemi
Description: SNSR IMAGE DGTL HISPI 48-LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.67µm x 1.67µm
Active Pixel Array: 3856H x 2764V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Active
Frames per Second: 30.0
Description: SNSR IMAGE DGTL HISPI 48-LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.67µm x 1.67µm
Active Pixel Array: 3856H x 2764V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Active
Frames per Second: 30.0
на замовлення 2025 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2282.10 грн |
| 5+ | 2016.70 грн |
| 10+ | 1949.39 грн |
| 25+ | 1753.99 грн |
| 50+ | 1702.34 грн |
| 100+ | 1654.96 грн |
| MT9M021IA3XTC-DPBR |
Виробник: onsemi
Description: SENSOR IMAGE CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 45.0
Description: SENSOR IMAGE CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 45.0
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| MT9M024IA3XTM-DRBR |
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Виробник: onsemi
Description: SENSOR IMAGE 1.6MP CMOS 48-LCC
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 45
Description: SENSOR IMAGE 1.6MP CMOS 48-LCC
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 45
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| MT9M031I12STM-DPBR |
Виробник: onsemi
Description: SENSOR IMAGE 1.6MP CMOS 48-LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 45.0
Description: SENSOR IMAGE 1.6MP CMOS 48-LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 45.0
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| MT9M031I12STM-DRBR |
Виробник: onsemi
Description: SENSOR IMAGE 1.6MP CMOS 48-LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 45.0
Description: SENSOR IMAGE 1.6MP CMOS 48-LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 45.0
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| MT9M034I12STM-DRBR |
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Виробник: onsemi
Description: EVAL BOARD FOR MT9M034I12STM
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 45.0
Description: EVAL BOARD FOR MT9M034I12STM
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 45.0
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| MT9V034C12STC-DP |
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Виробник: onsemi
Description: SENSOR IMAGE VGA COLOR 48CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: SENSOR IMAGE VGA COLOR 48CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
товару немає в наявності
Мінімальне замовлення: 1520 шт
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| MT9V034C12STC-DR |
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Виробник: onsemi
Description: SENSOR IMAGE VGA COLOR 48CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Description: SENSOR IMAGE VGA COLOR 48CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
на замовлення 1669 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1610.26 грн |
| 10+ | 1227.29 грн |
| 25+ | 1162.71 грн |
| 152+ | 939.61 грн |
| 456+ | 878.99 грн |
| MT9V126IA3XTC-DR |
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Виробник: onsemi
Description: SENSOR IMAGE VGA SOC 9X9BGA
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60
Description: SENSOR IMAGE VGA SOC 9X9BGA
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2600+ | 983.99 грн |
| MT9V128IA3XTC-DR |
![]() |
Виробник: onsemi
Description: SENSOR IMAGE
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 680H x 512V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Not For New Designs
Frames per Second: 60.0
Description: SENSOR IMAGE
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 680H x 512V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Not For New Designs
Frames per Second: 60.0
на замовлення 73 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1736.57 грн |
| 10+ | 1393.24 грн |
| 25+ | 1234.02 грн |
| FDD86369-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 42.42 грн |
| 5000+ | 38.74 грн |
| FDBL86563-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 155.72 грн |
| FDD86369-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 39725 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.23 грн |
| 10+ | 90.66 грн |
| 100+ | 61.61 грн |
| 500+ | 46.15 грн |
| 1000+ | 44.50 грн |
| FDBL86563-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14295 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 426.20 грн |
| 10+ | 275.20 грн |
| 100+ | 198.39 грн |
| 500+ | 172.25 грн |
| FGH40T65SH-F155 |
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Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.2ns/65.6ns
Switching Energy: 1.01mJ (on), 297µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.2ns/65.6ns
Switching Energy: 1.01mJ (on), 297µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
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| FAN73893MX |
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Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 113.78 грн |
| FAN8841MPX |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 24MLP
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: DC-DC Converters
Technology: Power MOSFET
Voltage - Load: 13V ~ 60V
Supplier Device Package: 24-MLP (4x4)
Fault Protection: ESD, Over Voltage, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 24MLP
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: DC-DC Converters
Technology: Power MOSFET
Voltage - Load: 13V ~ 60V
Supplier Device Package: 24-MLP (4x4)
Fault Protection: ESD, Over Voltage, UVLO
Load Type: Inductive
Part Status: Active
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Мінімальне замовлення: 3000 шт
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| FAN73893MX |
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Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1613 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 325.46 грн |
| 10+ | 203.71 грн |
| 25+ | 175.09 грн |
| 100+ | 133.92 грн |
| 250+ | 118.98 грн |
| 500+ | 109.80 грн |
| FAN8841MPX |
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Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 24MLP
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: DC-DC Converters
Technology: Power MOSFET
Voltage - Load: 13V ~ 60V
Supplier Device Package: 24-MLP (4x4)
Fault Protection: ESD, Over Voltage, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 24MLP
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: DC-DC Converters
Technology: Power MOSFET
Voltage - Load: 13V ~ 60V
Supplier Device Package: 24-MLP (4x4)
Fault Protection: ESD, Over Voltage, UVLO
Load Type: Inductive
Part Status: Active
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| CPH3455-TL-W |
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Виробник: onsemi
Description: MOSFET N-CH 35V 3A 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 186 pF @ 20 V
Description: MOSFET N-CH 35V 3A 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 186 pF @ 20 V
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| FS8G |
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Виробник: onsemi
Description: DIODE STANDARD 400V 8A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE STANDARD 400V 8A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 33.72 грн |
| 10000+ | 31.92 грн |
| FS8K |
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Виробник: onsemi
Description: DIODE GEN PURP 800V 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 800V 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
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| FS8M |
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Виробник: onsemi
Description: DIODE STANDARD 1000V 8A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 8A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 30.27 грн |
| 10000+ | 28.38 грн |
| FS8G |
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Виробник: onsemi
Description: DIODE STANDARD 400V 8A TO2773
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE STANDARD 400V 8A TO2773
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Qualification: AEC-Q101
Grade: Automotive
на замовлення 12184 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.94 грн |
| 10+ | 68.65 грн |
| 100+ | 54.22 грн |
| 500+ | 40.20 грн |
| 1000+ | 34.32 грн |
| 2000+ | 33.87 грн |
| FS8J |
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Виробник: onsemi
Description: DIODE GEN PURP 600V 8A TO277-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 600V 8A TO277-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 4907 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.04 грн |
| 10+ | 66.71 грн |
| 100+ | 44.35 грн |
| 500+ | 32.63 грн |
| 1000+ | 29.73 грн |
| 2000+ | 27.29 грн |
| FS8K |
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Виробник: onsemi
Description: DIODE GEN PURP 800V 8A TO277-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 800V 8A TO277-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 3545 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.39 грн |
| 10+ | 53.65 грн |
| 100+ | 40.60 грн |
| 500+ | 29.82 грн |
| 1000+ | 25.20 грн |
| 2000+ | 24.69 грн |
| FS8M |
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Виробник: onsemi
Description: DIODE STANDARD 1000V 8A TO2773
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Description: DIODE STANDARD 1000V 8A TO2773
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
на замовлення 32084 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.08 грн |
| 10+ | 77.68 грн |
| 100+ | 52.13 грн |
| 500+ | 38.64 грн |
| 1000+ | 35.33 грн |
| 2000+ | 32.59 грн |
| FDMT800120DC |
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Виробник: onsemi
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-Dual Cool™88
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-Dual Cool™88
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 223.63 грн |
| FDMT800120DC |
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Виробник: onsemi
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-Dual Cool™88
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-Dual Cool™88
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 525.39 грн |
| 10+ | 343.48 грн |
| 100+ | 263.58 грн |
| NB3W800LMNG |
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Виробник: onsemi
Description: IC CLOCK ZDB FANOUT BUFFER 48QFN
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: No/No
PLL: Yes with Bypass
Supplier Device Package: 48-QFN (6x6)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:8
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Frequency - Max: 133.33MHz
Output: HCSL
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Description: IC CLOCK ZDB FANOUT BUFFER 48QFN
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: No/No
PLL: Yes with Bypass
Supplier Device Package: 48-QFN (6x6)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:8
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C
Input: Clock
Frequency - Max: 133.33MHz
Output: HCSL
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 667.20 грн |
| 10+ | 433.62 грн |
| 25+ | 379.13 грн |
| 80+ | 305.96 грн |
| 230+ | 271.89 грн |
| 490+ | 266.73 грн |
| NBA3N200SDG |
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Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Description: IC TRANSCEIVER HALF 1/1 8SOIC
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| NBA3N201SDG |
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Виробник: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Obsolete
Duplex: Half
Receiver Hysteresis: 25 mV
Supplier Device Package: 8-SOIC
Protocol: LVDS, Multipoint
Data Rate: 200Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 3V ~ 3.6V
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Obsolete
Duplex: Half
Receiver Hysteresis: 25 mV
Supplier Device Package: 8-SOIC
Protocol: LVDS, Multipoint
Data Rate: 200Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 3V ~ 3.6V
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| NGTG35N65FL2WG |
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Виробник: onsemi
Description: IGBT FIELD STOP 650V 70A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 72ns/132ns
Switching Energy: 840µJ (on), 280µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 125 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
Description: IGBT FIELD STOP 650V 70A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 72ns/132ns
Switching Energy: 840µJ (on), 280µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 125 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
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| ESD5004MXTBG |
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Виробник: onsemi
Description: TVS DIODE 3.3VWM 9.1VC 4X3DFN
Capacitance @ Frequency: 3.5pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9.1V
Voltage - Breakdown (Min): 3.9V
Unidirectional Channels: 4
Supplier Device Package: 4-X3DFN (0.53x0.93)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Description: TVS DIODE 3.3VWM 9.1VC 4X3DFN
Capacitance @ Frequency: 3.5pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9.1V
Voltage - Breakdown (Min): 3.9V
Unidirectional Channels: 4
Supplier Device Package: 4-X3DFN (0.53x0.93)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
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Мінімальне замовлення: 8000 шт
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| NCL30030B3DR2G |
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Виробник: onsemi
Description: IC LED DRIVER OFFL 16SOIC
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Supply (Max): 30V
Voltage - Supply (Min): 9V
Supplier Device Package: 16-SOIC
Topology: Flyback
Internal Switch(s): No
Applications: Lighting, Signage
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Description: IC LED DRIVER OFFL 16SOIC
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Supply (Max): 30V
Voltage - Supply (Min): 9V
Supplier Device Package: 16-SOIC
Topology: Flyback
Internal Switch(s): No
Applications: Lighting, Signage
Operating Temperature: -40°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
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Мінімальне замовлення: 2500 шт
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| NCP51145MNTAG |
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Виробник: onsemi
Description: IC REG LDO DDR 1OUT 8DFN
Part Status: Obsolete
Supplier Device Package: 8-DFN (2x2)
Applications: LDO (Linear), DDR
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 1V ~ 5.5V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG LDO DDR 1OUT 8DFN
Part Status: Obsolete
Supplier Device Package: 8-DFN (2x2)
Applications: LDO (Linear), DDR
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 1V ~ 5.5V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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| NCS20072DR2G |
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Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 18.05 грн |
| 5000+ | 16.91 грн |
| NCS20072DTBR2G |
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Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-TSSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 420µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 8-TSSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
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Мінімальне замовлення: 2500 шт
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| NTMFS5C423NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1500 шт
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| NTMFS5C670NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 88500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 18.17 грн |
| 3000+ | 16.01 грн |
| NTMFS5C670NLT3G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 17A/71A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 19.19 грн |
| 10000+ | 14.26 грн |
| NVMFS5C404NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 49A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 49A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 378A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Мінімальне замовлення: 1500 шт
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| NVMFS5C423NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 126A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 126A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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