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AR0132AT6M00XPEA0-DRBR1 AR0132AT6M00XPEA0-DRBR1 onsemi Description: IMAGE SENSOR 1.2MP 1/3 CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 45
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AR0134CSSC00SUEA0-DPBR1 AR0134CSSC00SUEA0-DPBR1 onsemi ar0134cs-d.pdf Description: IMAGE SENSOR 1.2MP 1/3 GS CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
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AR0134CSSM00SPCA0-DPBR1 onsemi ar0134cs-d.pdf Description: IMAGE SENSOR 1.2MP 1/3 GS CIS
Packaging: Tray
Package / Case: 48-SMD Module
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-iLCC
Part Status: Obsolete
Frames per Second: 54.0
на замовлення 224 шт:
термін постачання 21-31 дні (днів)
1+2258.09 грн
5+1951.33 грн
10+1871.57 грн
25+1669.17 грн
40+1629.09 грн
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AR0134CSSM00SUEA0-DPBR1 AR0134CSSM00SUEA0-DPBR1 onsemi ar0134cs-d.pdf Description: IMAGE SENSOR 1.2MP 1/3 GS CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
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AR0134CSSM25SUEA0-DRBR1 AR0134CSSM25SUEA0-DRBR1 onsemi ar0134cs-d.pdf Description: IMAGE SENSOR 1.2MP 1/3 GS CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54.0
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AR0230ATSC12XUEA0-DRBR onsemi Description: IMAGE SENSOR 2MP 1/3 CIS
Packaging: Tray
Package / Case: 80-LBGA
Supplier Device Package: 80-IBGA (10x10)
Part Status: Obsolete
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AR0238CSSC12SHRA0-DR AR0238CSSC12SHRA0-DR onsemi ar0238-d.pdf Description: IMAGE SENSOR 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1080V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60.0
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AR1335CSSC11SMKA0-CR AR1335CSSC11SMKA0-CR onsemi ar1335?pdf=Y Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30
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ASX340AT2C00XPED0-DPBR1 ASX340AT2C00XPED0-DPBR1 onsemi asx340at-d.pdf Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 720H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
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ASX340AT2C00XPED0-DRBR1 ASX340AT2C00XPED0-DRBR1 onsemi asx340at-d.pdf Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 720H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
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MT9P006I12STCU-DR1 onsemi mt9p006?pdf= Description: SENSOR IMAGE VGA 5MP CMOS 48LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Frames per Second: 60.0
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MT9V034C12STC-DP1 onsemi mt9v034-d.pdf Description: SENSOR IMAGE VGA 1/3 CMOS 48CLCC
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Frames per Second: 60.0
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+1946.63 грн
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MT9V034C12STM-DP1 MT9V034C12STM-DP1 onsemi mt9v034-d.pdf Description: SENSOR IMAGE VGA 1/3 CMOS 48CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
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MT9V138C12STC-DP1 onsemi Description: SOC SENSOR IMAGE VGA 1/4 48CLCC
Packaging: Tray
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NOIP1FN2000A-LTI NOIP1FN2000A-LTI onsemi noip1sn5000a-d.pdf Description: IC IMAGE SENSOR CMOS 128LBGA
Packaging: Tray
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 1920H x 1200V
Part Status: Obsolete
Frames per Second: 230.0
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NOIP3SE1300A-QDI onsemi noip1sn1300a-d.pdf Description: IC IMAGE SENSOR CMOS 48LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Frames per Second: 50.0
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NOIP3SE5000A-QDI onsemi noip1sn5000a-d.pdf Description: IC IMAGE SENSOR CMOS 84LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 2592H x 2048V
Frames per Second: 100.0
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NOIP3SN5000A-QTI NOIP3SN5000A-QTI onsemi noip1sn5000a-d.pdf Description: IC IMAGE SENSOR CMOS 84LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 2592H x 2048V
Part Status: Active
Frames per Second: 100
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
1+16666.58 грн
10+15890.27 грн
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LV56851UV-XH LV56851UV-XH onsemi Description: IC REG AUTO APPL 5OUT 15HZIP
Packaging: Tube
Package / Case: 15-SSIP Exposed Pad, Formed Leads
Voltage - Output: Multiple
Mounting Type: Through Hole
Number of Outputs: 5
Voltage - Input: 7V ~ 36V
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Power Supply, Automotive Applications
Supplier Device Package: 15-HZIP
Part Status: Obsolete
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NGTB25N120FL2WAG NGTB25N120FL2WAG onsemi ngtb25n120fl2wa-d.pdf Description: IGBT FS 1200V 100A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 17ns/113ns
Switching Energy: 990µJ (on), 660µJ (off)
Test Condition: 600V, 50A, 10Ohm, 15V
Gate Charge: 181 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
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NGTB40N120FL2WAG NGTB40N120FL2WAG onsemi ngtb40n120fl2wa-d.pdf Description: IGBT FS 1200V 160A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 30ns/145ns
Switching Energy: 1.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 313 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 536 W
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NGTB50N65FL2WAG NGTB50N65FL2WAG onsemi ngtb50n65fl2wa-d.pdf Description: IGBT FS 650V 160A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 94 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/123ns
Switching Energy: 420µJ (on), 550µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 215 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 417 W
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NGTB75N65FL2WAG NGTB75N65FL2WAG onsemi ngtb75n65fl2wa-d.pdf Description: IGBT FS 650V 200A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/157ns
Switching Energy: 610µJ (on), 1.2mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 536 W
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STK5Q4U363J-E onsemi Description: IGBT IPM 600V 10A 38-PWRDIP MOD
Packaging: Tube
Package / Case: 38-PowerDIP Module (1.165", 29.60mm), 23 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Not For New Designs
Current: 10 A
Voltage: 600 V
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2SK4066-DL-1EX 2SK4066-DL-1EX onsemi ONSMS35711-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 100A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-263-2
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
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NCV8402AMNT2G NCV8402AMNT2G onsemi NCV8402_A_Rev21_11-17-16.pdf Description: IC PWR DRIVER N-CHAN 1:1 6DFN
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 6-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 165mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-DFN (3x3.3)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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CAT1163WI-45-G CAT1163WI-45-G onsemi CAT1163_Rev10_11-25-11.pdf Description: IC SUPERVISOR 1 CHANNEL 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 4.5V
Supplier Device Package: 8-SOIC
Part Status: Obsolete
DigiKey Programmable: Not Verified
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FAM65V05DF1 FAM65V05DF1 onsemi fam65v05df1-d.pdf Description: AUTO PWR MODUL 650V 50A 27PWRDIP
Packaging: Tube
Package / Case: 27-PowerDIP Module (0.300", 7.62mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 50 A
Voltage: 650 V
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
1+4608.59 грн
10+4140.21 грн
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FAN3224TUMX-F085 FAN3224TUMX-F085 onsemi fan3223-f085-d.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 9.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)
2500+60.21 грн
5000+56.69 грн
7500+56.05 грн
12500+51.93 грн
Мінімальне замовлення: 2500
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FAN53526UC00X FAN53526UC00X onsemi fan53526-d.pdf Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 0.6V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
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FAN53526UC89X FAN53526UC89X onsemi fan53526-d.pdf Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 1.15V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.15V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+31.57 грн
Мінімальне замовлення: 3000
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FAN54511APUCX FAN54511APUCX onsemi fan54511-d.pdf Description: IC BATT CHG LI-ION 1CELL 63WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 63-WLCSP
Charge Current - Max: 3.2A
Programmable Features: Timer
Fault Protection: Over Temperature
Voltage - Supply (Max): 13.25V
Current - Charging: Constant - Programmable
Part Status: Not For New Designs
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FAN602FMX FAN602FMX onsemi fan602f-d.pdf Description: IC OFFLINE SWITCH FLYBACK 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 75kHz ~ 140kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.5V ~ 25V
Supplier Device Package: 10-SOIC
Fault Protection: Over Temperature, Over Voltage
Voltage - Start Up: 17.2 V
Part Status: Obsolete
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FAN602LMX FAN602LMX onsemi fan602l-d.pdf Description: IC OFFLINE SWITCH FLYBACK 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 60kHz ~ 140kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.5V ~ 25V
Supplier Device Package: 10-SOIC
Fault Protection: Over Temperature, Over Voltage
Voltage - Start Up: 17.2 V
Part Status: Obsolete
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FAN602MX FAN602MX onsemi fan602-d.pdf Description: IC OFFLINE SWITCH FLYBACK 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 60kHz ~ 140kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.5V ~ 25V
Supplier Device Package: 10-SOIC
Fault Protection: Over Temperature, Over Voltage
Voltage - Start Up: 17.2 V
Part Status: Obsolete
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FAN6204AMX FAN6204AMX onsemi fan6204a-d.pdf Description: SR CONTROLLER IC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 28.5V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Current - Supply: 7 mA
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+39.11 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FAN7380MX-OP FAN7380MX-OP onsemi fan7380-op-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 230ns, 90ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 90mA, 180mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+33.44 грн
6000+31.45 грн
9000+31.07 грн
15000+28.76 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FCP11N60N-F102 FCP11N60N-F102 onsemi fcpf11n60nt-d.pdf Description: MOSFET N-CH 600V 10.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
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FCP16N60N-F102 FCP16N60N-F102 onsemi fcpf16n60nt-d.pdf Description: MOSFET N-CH 600V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 8A, 10V
Power Dissipation (Max): 134.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 100 V
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FCP22N60N-F102 FCP22N60N-F102 onsemi Description: MOSFET N-CH 600V 22A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±45V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
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FCPF150N65F FCPF150N65F onsemi fcpf150n65f-d.pdf Description: MOSFET N-CH 650V 14.9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
1+457.78 грн
50+234.09 грн
100+214.11 грн
500+168.10 грн
В кошику  од. на суму  грн.
FDC30N20DZ FDC30N20DZ onsemi fdc30n20dz-d.pdf Description: MOSFET N-CH 30V 4.6A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 960mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V
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FDMC007N30D FDMC007N30D onsemi fdmc007n30d-d.pdf Description: MOSFET 2N-CH 30V 46A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 46A
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V, 2360pF @ 15V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
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FDMC2D8N025S FDMC2D8N025S onsemi fdmc2d8n025s-d.pdf Description: MOSFET N-CH 25V 124A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 13 V
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FDMC8010DC FDMC8010DC onsemi fdmc8010dc-d.pdf Description: MOSFET N-CH 30V 37A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 37A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 15 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+36.52 грн
6000+33.18 грн
9000+33.10 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDMC86183 FDMC86183 onsemi fdmc86183-d.pdf Description: MOSFET N-CH 100V 47A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+49.05 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDMD8680 FDMD8680 onsemi fdmd8680-d.pdf Description: MOSFET 2 N-CH 80V 66A 8-PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 39W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Power 5x6
Part Status: Active
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FDMF2011 FDMF2011 onsemi fdmf2011-d.pdf Description: MCM FAN7842 DRIVER AND MV5 100V
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FDMF4061 FDMF4061 onsemi fdmf4061-d.pdf Description: MCM FAN7842 DRIVER AND MV7 60 FE
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FDMQ8205A FDMQ8205A onsemi fdmq8205a-d.pdf Description: GREENBRIDGETM 2 SERIES OF HIGH-E
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Bridge Rectifier
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 57V (Max)
Applications: Power Over Ethernet (PoE)
Internal Switch(s): Yes
FET Type: N and P-Channel
Ratio - Input:Output: Bridge (2)
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
Current - Supply: 400 µA
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FDMS2D4N03S onsemi fdms2d4n03s-d.pdf Description: MOSFET N-CH 30V 163A 8PQFN
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FDMS8050 FDMS8050 onsemi fdms8050-d.pdf Description: MOSFET N-CHANNEL 30V 55A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
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FDP032N08-F102 FDP032N08-F102 onsemi fdp032n08-d.pdf Description: MOSFET N-CHANNEL 75V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
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FDP038AN06A0-F102 FDP038AN06A0-F102 onsemi fdp038an06a0-d.pdf Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
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FDP047N08-F102 FDP047N08-F102 onsemi fdp047n08jp-d.pdf Description: MOSFET N-CH 75V 164A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V
на замовлення 3169 шт:
термін постачання 21-31 дні (днів)
2+253.28 грн
10+159.52 грн
100+111.45 грн
800+81.00 грн
1600+77.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDPC3D5N025X9D onsemi fdpc3d5n025x9d-d.pdf Description: MOSFET 2N-CH 25V 74A 12PQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 74A
Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 13V
Rds On (Max) @ Id, Vgs: 3.01mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-PQFN (3.3x3.3)
Part Status: Obsolete
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FDPF33N25TRDTU FDPF33N25TRDTU onsemi fdpf33n25trdtu-d.pdf Description: MOSFET N-CHANNEL 250V TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F (LG-Formed)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
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FDPF39N20TLDTU FDPF39N20TLDTU onsemi fdpf39n20tldtu-d.pdf Description: MOSFET N-CH 200V 39A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 19.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 25 V
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FEBFAN9673Q-B1H5000A-GEVB onsemi Description: EVALUATION BOARD
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FFG1040UC003X FFG1040UC003X onsemi ffg1040uc003x-d.pdf Description: IC BATT MON LI-ION 1CELL 12WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 12-WLCSP (2.23x1.46)
Fault Protection: Over Current, Over Temperature, Over Voltage
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AR0132AT6M00XPEA0-DRBR1
AR0132AT6M00XPEA0-DRBR1
Виробник: onsemi
Description: IMAGE SENSOR 1.2MP 1/3 CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 45
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AR0134CSSC00SUEA0-DPBR1 ar0134cs-d.pdf
AR0134CSSC00SUEA0-DPBR1
Виробник: onsemi
Description: IMAGE SENSOR 1.2MP 1/3 GS CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
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AR0134CSSM00SPCA0-DPBR1 ar0134cs-d.pdf
Виробник: onsemi
Description: IMAGE SENSOR 1.2MP 1/3 GS CIS
Packaging: Tray
Package / Case: 48-SMD Module
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-iLCC
Part Status: Obsolete
Frames per Second: 54.0
на замовлення 224 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2258.09 грн
5+1951.33 грн
10+1871.57 грн
25+1669.17 грн
40+1629.09 грн
В кошику  од. на суму  грн.
AR0134CSSM00SUEA0-DPBR1 ar0134cs-d.pdf
AR0134CSSM00SUEA0-DPBR1
Виробник: onsemi
Description: IMAGE SENSOR 1.2MP 1/3 GS CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
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AR0134CSSM25SUEA0-DRBR1 ar0134cs-d.pdf
AR0134CSSM25SUEA0-DRBR1
Виробник: onsemi
Description: IMAGE SENSOR 1.2MP 1/3 GS CIS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54.0
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AR0230ATSC12XUEA0-DRBR
Виробник: onsemi
Description: IMAGE SENSOR 2MP 1/3 CIS
Packaging: Tray
Package / Case: 80-LBGA
Supplier Device Package: 80-IBGA (10x10)
Part Status: Obsolete
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AR0238CSSC12SHRA0-DR ar0238-d.pdf
AR0238CSSC12SHRA0-DR
Виробник: onsemi
Description: IMAGE SENSOR 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1080V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60.0
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AR1335CSSC11SMKA0-CR ar1335?pdf=Y
AR1335CSSC11SMKA0-CR
Виробник: onsemi
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30
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ASX340AT2C00XPED0-DPBR1 asx340at-d.pdf
ASX340AT2C00XPED0-DPBR1
Виробник: onsemi
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 720H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
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ASX340AT2C00XPED0-DRBR1 asx340at-d.pdf
ASX340AT2C00XPED0-DRBR1
Виробник: onsemi
Description: SENSOR IMAGE MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 63-LFBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 720H x 560V
Supplier Device Package: 63-IBGA (7.5x7.5)
Frames per Second: 60.0
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MT9P006I12STCU-DR1 mt9p006?pdf=
Виробник: onsemi
Description: SENSOR IMAGE VGA 5MP CMOS 48LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Frames per Second: 60.0
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MT9V034C12STC-DP1 mt9v034-d.pdf
Виробник: onsemi
Description: SENSOR IMAGE VGA 1/3 CMOS 48CLCC
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Frames per Second: 60.0
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1946.63 грн
В кошику  од. на суму  грн.
MT9V034C12STM-DP1 mt9v034-d.pdf
MT9V034C12STM-DP1
Виробник: onsemi
Description: SENSOR IMAGE VGA 1/3 CMOS 48CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
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MT9V138C12STC-DP1
Виробник: onsemi
Description: SOC SENSOR IMAGE VGA 1/4 48CLCC
Packaging: Tray
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NOIP1FN2000A-LTI noip1sn5000a-d.pdf
NOIP1FN2000A-LTI
Виробник: onsemi
Description: IC IMAGE SENSOR CMOS 128LBGA
Packaging: Tray
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 1920H x 1200V
Part Status: Obsolete
Frames per Second: 230.0
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NOIP3SE1300A-QDI noip1sn1300a-d.pdf
Виробник: onsemi
Description: IC IMAGE SENSOR CMOS 48LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Frames per Second: 50.0
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NOIP3SE5000A-QDI noip1sn5000a-d.pdf
Виробник: onsemi
Description: IC IMAGE SENSOR CMOS 84LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 2592H x 2048V
Frames per Second: 100.0
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NOIP3SN5000A-QTI noip1sn5000a-d.pdf
NOIP3SN5000A-QTI
Виробник: onsemi
Description: IC IMAGE SENSOR CMOS 84LCC
Packaging: Tray
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 2592H x 2048V
Part Status: Active
Frames per Second: 100
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+16666.58 грн
10+15890.27 грн
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LV56851UV-XH
LV56851UV-XH
Виробник: onsemi
Description: IC REG AUTO APPL 5OUT 15HZIP
Packaging: Tube
Package / Case: 15-SSIP Exposed Pad, Formed Leads
Voltage - Output: Multiple
Mounting Type: Through Hole
Number of Outputs: 5
Voltage - Input: 7V ~ 36V
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Power Supply, Automotive Applications
Supplier Device Package: 15-HZIP
Part Status: Obsolete
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NGTB25N120FL2WAG ngtb25n120fl2wa-d.pdf
NGTB25N120FL2WAG
Виробник: onsemi
Description: IGBT FS 1200V 100A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 17ns/113ns
Switching Energy: 990µJ (on), 660µJ (off)
Test Condition: 600V, 50A, 10Ohm, 15V
Gate Charge: 181 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
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NGTB40N120FL2WAG ngtb40n120fl2wa-d.pdf
NGTB40N120FL2WAG
Виробник: onsemi
Description: IGBT FS 1200V 160A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 30ns/145ns
Switching Energy: 1.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 313 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 536 W
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NGTB50N65FL2WAG ngtb50n65fl2wa-d.pdf
NGTB50N65FL2WAG
Виробник: onsemi
Description: IGBT FS 650V 160A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 94 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/123ns
Switching Energy: 420µJ (on), 550µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 215 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 417 W
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NGTB75N65FL2WAG ngtb75n65fl2wa-d.pdf
NGTB75N65FL2WAG
Виробник: onsemi
Description: IGBT FS 650V 200A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/157ns
Switching Energy: 610µJ (on), 1.2mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 536 W
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STK5Q4U363J-E
Виробник: onsemi
Description: IGBT IPM 600V 10A 38-PWRDIP MOD
Packaging: Tube
Package / Case: 38-PowerDIP Module (1.165", 29.60mm), 23 Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Not For New Designs
Current: 10 A
Voltage: 600 V
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2SK4066-DL-1EX ONSMS35711-1.pdf?t.download=true&u=5oefqw
2SK4066-DL-1EX
Виробник: onsemi
Description: MOSFET N-CH 60V 100A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-263-2
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
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NCV8402AMNT2G NCV8402_A_Rev21_11-17-16.pdf
NCV8402AMNT2G
Виробник: onsemi
Description: IC PWR DRIVER N-CHAN 1:1 6DFN
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 6-VDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 165mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-DFN (3x3.3)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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CAT1163WI-45-G CAT1163_Rev10_11-25-11.pdf
CAT1163WI-45-G
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 4.5V
Supplier Device Package: 8-SOIC
Part Status: Obsolete
DigiKey Programmable: Not Verified
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FAM65V05DF1 fam65v05df1-d.pdf
FAM65V05DF1
Виробник: onsemi
Description: AUTO PWR MODUL 650V 50A 27PWRDIP
Packaging: Tube
Package / Case: 27-PowerDIP Module (0.300", 7.62mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 50 A
Voltage: 650 V
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4608.59 грн
10+4140.21 грн
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FAN3224TUMX-F085 fan3223-f085-d.pdf
FAN3224TUMX-F085
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 9.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+60.21 грн
5000+56.69 грн
7500+56.05 грн
12500+51.93 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FAN53526UC00X fan53526-d.pdf
FAN53526UC00X
Виробник: onsemi
Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 0.6V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
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FAN53526UC89X fan53526-d.pdf
FAN53526UC89X
Виробник: onsemi
Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 1.15V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.15V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+31.57 грн
Мінімальне замовлення: 3000
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FAN54511APUCX fan54511-d.pdf
FAN54511APUCX
Виробник: onsemi
Description: IC BATT CHG LI-ION 1CELL 63WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C, USB
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 63-WLCSP
Charge Current - Max: 3.2A
Programmable Features: Timer
Fault Protection: Over Temperature
Voltage - Supply (Max): 13.25V
Current - Charging: Constant - Programmable
Part Status: Not For New Designs
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FAN602FMX fan602f-d.pdf
FAN602FMX
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 75kHz ~ 140kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.5V ~ 25V
Supplier Device Package: 10-SOIC
Fault Protection: Over Temperature, Over Voltage
Voltage - Start Up: 17.2 V
Part Status: Obsolete
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FAN602LMX fan602l-d.pdf
FAN602LMX
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 60kHz ~ 140kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.5V ~ 25V
Supplier Device Package: 10-SOIC
Fault Protection: Over Temperature, Over Voltage
Voltage - Start Up: 17.2 V
Part Status: Obsolete
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FAN602MX fan602-d.pdf
FAN602MX
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 60kHz ~ 140kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5.5V ~ 25V
Supplier Device Package: 10-SOIC
Fault Protection: Over Temperature, Over Voltage
Voltage - Start Up: 17.2 V
Part Status: Obsolete
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FAN6204AMX fan6204a-d.pdf
FAN6204AMX
Виробник: onsemi
Description: SR CONTROLLER IC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 28.5V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Current - Supply: 7 mA
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+39.11 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FAN7380MX-OP fan7380-op-d.pdf
FAN7380MX-OP
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 230ns, 90ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 90mA, 180mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+33.44 грн
6000+31.45 грн
9000+31.07 грн
15000+28.76 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FCP11N60N-F102 fcpf11n60nt-d.pdf
FCP11N60N-F102
Виробник: onsemi
Description: MOSFET N-CH 600V 10.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
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FCP16N60N-F102 fcpf16n60nt-d.pdf
FCP16N60N-F102
Виробник: onsemi
Description: MOSFET N-CH 600V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 8A, 10V
Power Dissipation (Max): 134.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 100 V
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FCP22N60N-F102
FCP22N60N-F102
Виробник: onsemi
Description: MOSFET N-CH 600V 22A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±45V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
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FCPF150N65F fcpf150n65f-d.pdf
FCPF150N65F
Виробник: onsemi
Description: MOSFET N-CH 650V 14.9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+457.78 грн
50+234.09 грн
100+214.11 грн
500+168.10 грн
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FDC30N20DZ fdc30n20dz-d.pdf
FDC30N20DZ
Виробник: onsemi
Description: MOSFET N-CH 30V 4.6A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 960mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V
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FDMC007N30D fdmc007n30d-d.pdf
FDMC007N30D
Виробник: onsemi
Description: MOSFET 2N-CH 30V 46A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 46A
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V, 2360pF @ 15V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
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FDMC2D8N025S fdmc2d8n025s-d.pdf
FDMC2D8N025S
Виробник: onsemi
Description: MOSFET N-CH 25V 124A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 28A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 13 V
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FDMC8010DC fdmc8010dc-d.pdf
FDMC8010DC
Виробник: onsemi
Description: MOSFET N-CH 30V 37A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 37A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 15 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+36.52 грн
6000+33.18 грн
9000+33.10 грн
Мінімальне замовлення: 3000
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FDMC86183 fdmc86183-d.pdf
FDMC86183
Виробник: onsemi
Description: MOSFET N-CH 100V 47A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+49.05 грн
Мінімальне замовлення: 3000
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FDMD8680 fdmd8680-d.pdf
FDMD8680
Виробник: onsemi
Description: MOSFET 2 N-CH 80V 66A 8-PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 39W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 40V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Power 5x6
Part Status: Active
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FDMF2011 fdmf2011-d.pdf
FDMF2011
Виробник: onsemi
Description: MCM FAN7842 DRIVER AND MV5 100V
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FDMF4061 fdmf4061-d.pdf
FDMF4061
Виробник: onsemi
Description: MCM FAN7842 DRIVER AND MV7 60 FE
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FDMQ8205A fdmq8205a-d.pdf
FDMQ8205A
Виробник: onsemi
Description: GREENBRIDGETM 2 SERIES OF HIGH-E
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Bridge Rectifier
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 57V (Max)
Applications: Power Over Ethernet (PoE)
Internal Switch(s): Yes
FET Type: N and P-Channel
Ratio - Input:Output: Bridge (2)
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
Current - Supply: 400 µA
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FDMS2D4N03S fdms2d4n03s-d.pdf
Виробник: onsemi
Description: MOSFET N-CH 30V 163A 8PQFN
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FDMS8050 fdms8050-d.pdf
FDMS8050
Виробник: onsemi
Description: MOSFET N-CHANNEL 30V 55A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
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FDP032N08-F102 fdp032n08-d.pdf
FDP032N08-F102
Виробник: onsemi
Description: MOSFET N-CHANNEL 75V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
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FDP038AN06A0-F102 fdp038an06a0-d.pdf
FDP038AN06A0-F102
Виробник: onsemi
Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
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FDP047N08-F102 fdp047n08jp-d.pdf
FDP047N08-F102
Виробник: onsemi
Description: MOSFET N-CH 75V 164A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V
на замовлення 3169 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+253.28 грн
10+159.52 грн
100+111.45 грн
800+81.00 грн
1600+77.03 грн
Мінімальне замовлення: 2
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FDPC3D5N025X9D fdpc3d5n025x9d-d.pdf
Виробник: onsemi
Description: MOSFET 2N-CH 25V 74A 12PQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 74A
Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 13V
Rds On (Max) @ Id, Vgs: 3.01mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-PQFN (3.3x3.3)
Part Status: Obsolete
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FDPF33N25TRDTU fdpf33n25trdtu-d.pdf
FDPF33N25TRDTU
Виробник: onsemi
Description: MOSFET N-CHANNEL 250V TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F (LG-Formed)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
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FDPF39N20TLDTU fdpf39n20tldtu-d.pdf
FDPF39N20TLDTU
Виробник: onsemi
Description: MOSFET N-CH 200V 39A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 19.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 25 V
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FEBFAN9673Q-B1H5000A-GEVB
Виробник: onsemi
Description: EVALUATION BOARD
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FFG1040UC003X ffg1040uc003x-d.pdf
FFG1040UC003X
Виробник: onsemi
Description: IC BATT MON LI-ION 1CELL 12WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 12-WLCSP (2.23x1.46)
Fault Protection: Over Current, Over Temperature, Over Voltage
товару немає в наявності
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