| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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SZNUP1301ML3T1G | onsemi |
 Description: TVS DIODE SOT23-3Qualification: AEC-Q101 Grade: Automotive Part Status: Active Power Line Protection: No Voltage - Breakdown (Min): 70V Unidirectional Channels: 1 Supplier Device Package: SOT-23-3 (TO-236) Capacitance @ Frequency: 0.9pF @ 1MHz Operating Temperature: -65°C ~ 150°C (TJ) Type: Steering (Rail to Rail) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 7953 шт: термін постачання 21-31 дні (днів) |
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TS393DR2G | onsemi |
Description: IC COMPARATOR 2 GEN PUR 8SOIC Part Status: Active CMRR, PSRR (Typ): 71dB CMRR, 80dB PSRR Current - Output (Typ): 1mA Current - Input Bias (Max): 600pA Voltage - Input Offset (Max): 1.4mV (Typ) Current - Quiescent (Max): 15µA Propagation Delay (Max): 2.1µs Supplier Device Package: 8-SOIC Voltage - Supply, Single/Dual (±): 2.7V ~ 16V Operating Temperature: -40°C ~ 125°C Type: General Purpose Number of Elements: 2 Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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NCV8403BDTRKG | onsemi |
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK Qualification: AEC-Q101 Grade: Automotive Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Supplier Device Package: DPAK Ratio - Input:Output: 1:1 Current - Output (Max): 14A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 42V Input Type: Non-Inverting Rds On (Typ): 53mOhm Output Configuration: Low Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Features: Auto Restart Packaging: Cut Tape (CT) |
на замовлення 2345 шт: термін постачання 21-31 дні (днів) |
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| 74LVC540AMNTWG | onsemi |
Description: IC INVERTER 8-INPUT DFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MARS1-AR0231AT7-GEVB | onsemi |
Description: AUTOMOTIVE IMAGE SENSOR EVALBOAR Contents: Board(s) Part Status: Active Sensing Range: 2.3 Megapixel Supplied Contents: Board(s) Utilized IC / Part: AR0231AT Sensor Type: Image Sensor Interface: Parallel, Serial Sensitivity: 40fps Packaging: Bulk |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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SPZTA42T1G | onsemi |
Description: TRANS NPN 300V 0.5A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1.5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZMM5Z30VT1G | onsemi |
Description: DIODE ZENER 30V 500MW SOD523 Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 50 nA @ 21 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: SOD-523 Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 30 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Tolerance: ±6.7% Packaging: Cut Tape (CT) |
на замовлення 41935 шт: термін постачання 21-31 дні (днів) |
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AR0239SRSC00SUEAH3-GEVB | onsemi |
Description: 2MP 1/3 CIS 0 DEG CRARGB Packaging: Bulk Contents: Board(s) Sensor Type: Image Sensor Utilized IC / Part: AR0239SR Supplied Contents: Board(s) Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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FCD360N65S3R0 | onsemi |
Description: MOSFET N-CH 650V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FCH125N65S3R0-F155 | onsemi |
Description: MOSFET N-CH 650V 24A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V |
на замовлення 432 шт: термін постачання 21-31 дні (днів) |
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FCMT250N65S3 | onsemi |
Description: MOSFET N-CH 650V 12A POWER88 Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Supplier Device Package: Power88 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FCP125N65S3R0 | onsemi |
Description: MOSFET N-CH 650V 24A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V |
на замовлення 770 шт: термін постачання 21-31 дні (днів) |
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FCPF190N65S3R0L | onsemi |
Description: MOSFET N-CH 650V 17A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.7mA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FCPF600N65S3R0L | onsemi |
Description: MOSFET N-CH 650V 6A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 600µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDBL86066-F085 | onsemi |
Description: MOSFET N-CH 100V 185A 8HPSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 185A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V Power Dissipation (Max): 300W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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FDMS4D0N12C | onsemi |
Description: MOSFET N-CH 120V 18.5A/114A 8QFN Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 370A Power Dissipation (Max): 2.7W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 67A, 10V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 114A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FFSD1065A | onsemi |
Description: 650V 10A SIC SBD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FFSH1665A | onsemi |
Description: DIODE SIL CARB 650V 23A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 887pF @ 1V, 100kHz Current - Average Rectified (Io): 23A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||||||
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FFSH2065A | onsemi |
Description: DIODE SIL CARB 650V 25A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1085pF @ 1V, 100kHz Current - Average Rectified (Io): 25A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 227 шт: термін постачання 21-31 дні (днів) |
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FFSH30120A | onsemi |
Description: DIODE SIL CARB 1.2KV 46A TO247-2 Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 46A Capacitance @ Vr, F: 1740pF @ 1V, 100kHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||||||
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FFSH4065A | onsemi |
Description: DIODE SIL CARB 650V 48A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1989pF @ 1V, 100kHz Current - Average Rectified (Io): 48A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 551 шт: термін постачання 21-31 дні (днів) |
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FFSPF1065A | onsemi |
Description: DIODE SIC 650V 10A TO220F2FS Current - Reverse Leakage @ Vr: 200 µA @ 650 V Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220F-2FS Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 575pF @ 1V, 100kHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
на замовлення 930 шт: термін постачання 21-31 дні (днів) |
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FFSPF2065A | onsemi |
Description: DIODE SIC 650V 20A TO220F2FS Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1085pF @ 1V, 100kHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220F-2FS Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FGH40T120SQDNL4 | onsemi |
Description: IGBT TRENCH FS 1200V 160A TO-247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 166 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A Supplier Device Package: TO-247-4L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 46ns/220ns Switching Energy: 1.4mJ (on), 1.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 221 nC Part Status: Active Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 454 W |
на замовлення 205 шт: термін постачання 21-31 дні (днів) |
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FGH60T65SQD-F155 | onsemi |
Description: IGBT TRENCH FS 650V 120A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34.6 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20.8ns/102ns Switching Energy: 227µJ (on), 100µJ (off) Test Condition: 400V, 15A, 4.7Ohm, 15V Gate Charge: 79 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 333 W |
на замовлення 1201 шт: термін постачання 21-31 дні (днів) |
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FODM3052V-NF098 | onsemi |
Description: 4SO RP TRIAC VDE Packaging: Tube Package / Case: 4-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Voltage - Isolation: 3750Vrms Approval Agency: cUR, UR Current - Hold (Ih): 450µA (Typ) Supplier Device Package: 4-MFP Zero Crossing Circuit: No Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 60 mA |
на замовлення 2982 шт: термін постачання 21-31 дні (днів) |
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FSUSB242UCX | onsemi |
Description: TYPE C USB PROTECT SWITCH Features: Break-Before-Make, USB 2.0 Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 5Ohm (Typ) -3db Bandwidth: 1GHz Supplier Device Package: 9-WLCSP (1.2x1.2) Voltage - Supply, Single (V+): 2.7V ~ 5.5V Switch Circuit: DPDT Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Not For New Designs Number of Channels: 2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FUSB302BGEVB | onsemi |
Description: EVAL BOARD FOR FUSB302B Packaging: Bulk Function: USB Type-C® Type: Interface Contents: Board(s) Utilized IC / Part: FUSB302B Supplied Contents: Board(s) Part Status: Active |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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FUSB302TGEVB | onsemi |
Description: EVAL BOARD FOR FUSB302T Packaging: Bulk Function: USB Type-C® Type: Interface Contents: Board(s) Utilized IC / Part: FUSB302T Supplied Contents: Board(s) Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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FUSB307BGEVB | onsemi |
Description: EVAL BOARD FOR FUSB307B Packaging: Bulk Function: USB Type-C® Type: Interface Utilized IC / Part: FUSB307B Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FUSB307BMPX | onsemi |
Description: IC USB CONTROLLER I2C 16WQFN Packaging: Tape & Reel (TR) Package / Case: 16-WFQFN Exposed Pad Function: Controller Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Protocol: USB Standards: USB 3.0 Supplier Device Package: 16-WQFN (3x3) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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LC709203FXE-05MH | onsemi |
Description: IC BATT MON LI-ION 1CELL 9WLCSP |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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LV8548MCSLDGEVK | onsemi |
Description: EVAL BOARD FOR LV8548MC Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: LV8548MC Supplied Contents: Board(s) Primary Attributes: Motors (DC) |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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NCD5702DR2G | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 9.2ns, 7.9ns Channel Type: Single Driven Configuration: High-Side or Low-Side Number of Drivers: 1 Gate Type: IGBT Logic Voltage - VIL, VIH: 0.75V, 4.3V Current - Peak Output (Source, Sink): 7.8A, 6.8A Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCP1075ABP100G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 68% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V Supplier Device Package: 7-PDIP Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 8.4 V Part Status: Active Power (Watts): 14 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1075BBP100G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 68% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V Supplier Device Package: 8-PDIP Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 8.4 V Part Status: Active Power (Watts): 14 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1075BBP130G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 68% Frequency - Switching: 130kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V Supplier Device Package: 8-PDIP Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 8.4 V Part Status: Active Power (Watts): 14 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1076BBP100G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Packaging: Tube Voltage - Start Up: 8.4 V Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: 8-PDIP Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 700V Internal Switch(s): Yes Frequency - Switching: 100kHz Duty Cycle: 68% Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Power (Watts): 31 W Part Status: Active |
на замовлення 26739 шт: термін постачання 21-31 дні (днів) |
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NCP1076BBP130G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Power (Watts): 31 W Part Status: Active Voltage - Start Up: 8.4 V Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: 8-PDIP Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 700V Internal Switch(s): Yes Frequency - Switching: 130kHz Duty Cycle: 68% Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1077BBP065G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Power (Watts): 19 W Part Status: Active Voltage - Start Up: 8.4 V Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: 8-PDIP Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 700V Internal Switch(s): Yes Frequency - Switching: 65kHz Duty Cycle: 68% Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1077BBP130G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Power (Watts): 19 W Part Status: Active Voltage - Start Up: 8.4 V Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: 8-PDIP Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 700V Internal Switch(s): Yes Frequency - Switching: 130kHz Duty Cycle: 68% Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1079BBP130G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 68% Frequency - Switching: 130kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V Supplier Device Package: 8-PDIP Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 8.4 V Part Status: Active Power (Watts): 41 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NCP1239KD65R2G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Duty Cycle: 80% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.8V ~ 35V Supplier Device Package: 7-SOIC Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 12 V Control Features: EN, Soft Start Part Status: Active |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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NCP13992AADR2G | onsemi |
Description: IC OFFLINE SW HALF-BRDG 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Duty Cycle: 50% Frequency - Switching: 20kHz ~ 750kHz Internal Switch(s): No Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 20V Supplier Device Package: 16-SOIC Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 9 V Control Features: EN, Frequency Control, Soft Start, Sync |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCP51530ADR2G | onsemi |
Description: IC HALF BRIDGE DRIVER 2A 8SOIC Features: Bootstrap Circuit Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 10V ~ 17V Applications: General Purpose Current - Output / Channel: 2A Current - Peak Output: 2.2A Technology: Power MOSFET Voltage - Load: 700V Supplier Device Package: 8-SOIC Fault Protection: UVLO Load Type: Inductive, Capacitive Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCP718AMTADJTBG | onsemi |
Description: IC REG LIN POS ADJ 300MA 6-WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 8 µA Voltage - Input (Max): 24V Number of Regulators: 1 Supplier Device Package: 6-WDFN (2x2) Voltage - Output (Max): 5V Voltage - Output (Min/Fixed): 1.2V Control Features: Soft Start Part Status: Active PSRR: 60dB (1kHz) Voltage Dropout (Max): 0.49V @ 300mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 300 µA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NCS213RSQT2G | onsemi |
Description: IC CURRENT SENSE 1 CIRCUIT SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 125°C Current - Supply: 40µA Slew Rate: 1V/µs Current - Input Bias: 39 µA Voltage - Input Offset: 5 µV Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Number of Circuits: 1 -3db Bandwidth: 90 kHz Voltage - Supply Span (Min): 2.2 V Voltage - Supply Span (Max): 26 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NCS333ASQ3T2G | onsemi |
Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88A Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Zero-Drift Operating Temperature: -40°C ~ 125°C Current - Supply: 21µA Slew Rate: 0.15V/µs Gain Bandwidth Product: 350 kHz Current - Input Bias: 60 pA Voltage - Input Offset: 3.5 µV Supplier Device Package: SC-88A (SC-70-5/SOT-353) Part Status: Active Number of Circuits: 1 Current - Output / Channel: 11 mA -3db Bandwidth: 60 kHz Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 1287000 шт: термін постачання 21-31 дні (днів) |
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| NL17SZ07EDFT2G | onsemi |
Description: IC BUFF 1.65V SC-88A Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 24mA Supplier Device Package: SC-88A (SC-70-5/SOT-353) Part Status: Obsolete |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NOA1213CUTAG | onsemi |
Description: SENSOR OPT 590NM AMBIENT 6CUDFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Wavelength: 590nm Output Type: Current Mounting Type: Surface Mount Type: Ambient Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Supplier Device Package: 6-CUDFN (1.6x1.6) Proximity Detection: No |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NRVHP820MFDT3G | onsemi |
Description: DIODE ARRAY GP 200V 4A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVHP820MFDWFT1G | onsemi |
Description: DIODE ARRAY GP 200V 4A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVHP8H200MFDT1G | onsemi |
Description: DIODE ARRAY GP 200V 4A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVHP8H200MFDT3G | onsemi |
Description: DIODE ARRAY GP 200V 4A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVHP8H200MFDWFT1G | onsemi |
Description: DIODE ARRAY GP 200V 4A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NSR201MXT5G | onsemi |
Description: RF DIODE SCHOTTKY 2V 2X2DFN Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Diode Type: Schottky - Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz Resistance @ If, F: 18Ohm @ 10mA, 1MHz Voltage - Peak Reverse (Max): 2V Supplier Device Package: 2-X2DFN (1x0.6) Part Status: Active Current - Max: 50 mA |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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NSVF4015SG4T1G | onsemi |
Description: RF TRANS NPN 12V 10GHZ SC-82FL Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 17dB Power - Max: 450mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Supplier Device Package: SC-82FL/MCPH4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTHL065N65S3F | onsemi |
Description: MOSFET N-CH 650V 46A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V Power Dissipation (Max): 337W (Tc) Vgs(th) (Max) @ Id: 5V @ 4.6mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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NTHL110N65S3F | onsemi |
Description: MOSFET N-CH 650V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 3mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V |
на замовлення 588 шт: термін постачання 21-31 дні (днів) |
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NTTFS6H850NTAG | onsemi |
Description: MOSFET N-CH 80V 11A/68A 8WDFN Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-WDFN (3.3x3.3) Vgs(th) (Max) @ Id: 4V @ 70µA Power Dissipation (Max): 3.2W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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| SZNUP1301ML3T1G |
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Виробник: onsemi
Description: TVS DIODE SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 70V
Unidirectional Channels: 1
Supplier Device Package: SOT-23-3 (TO-236)
Capacitance @ Frequency: 0.9pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TVS DIODE SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 70V
Unidirectional Channels: 1
Supplier Device Package: SOT-23-3 (TO-236)
Capacitance @ Frequency: 0.9pF @ 1MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 7953 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.82 грн |
| 25+ | 12.68 грн |
| 100+ | 9.47 грн |
| 500+ | 6.99 грн |
| 1000+ | 5.86 грн |
| TS393DR2G |
|
Виробник: onsemi
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Part Status: Active
CMRR, PSRR (Typ): 71dB CMRR, 80dB PSRR
Current - Output (Typ): 1mA
Current - Input Bias (Max): 600pA
Voltage - Input Offset (Max): 1.4mV (Typ)
Current - Quiescent (Max): 15µA
Propagation Delay (Max): 2.1µs
Supplier Device Package: 8-SOIC
Voltage - Supply, Single/Dual (±): 2.7V ~ 16V
Operating Temperature: -40°C ~ 125°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Part Status: Active
CMRR, PSRR (Typ): 71dB CMRR, 80dB PSRR
Current - Output (Typ): 1mA
Current - Input Bias (Max): 600pA
Voltage - Input Offset (Max): 1.4mV (Typ)
Current - Quiescent (Max): 15µA
Propagation Delay (Max): 2.1µs
Supplier Device Package: 8-SOIC
Voltage - Supply, Single/Dual (±): 2.7V ~ 16V
Operating Temperature: -40°C ~ 125°C
Type: General Purpose
Number of Elements: 2
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| NCV8403BDTRKG |
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Виробник: onsemi
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Qualification: AEC-Q101
Grade: Automotive
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: DPAK
Ratio - Input:Output: 1:1
Current - Output (Max): 14A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V
Input Type: Non-Inverting
Rds On (Typ): 53mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Auto Restart
Packaging: Cut Tape (CT)
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Qualification: AEC-Q101
Grade: Automotive
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: DPAK
Ratio - Input:Output: 1:1
Current - Output (Max): 14A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V
Input Type: Non-Inverting
Rds On (Typ): 53mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Auto Restart
Packaging: Cut Tape (CT)
на замовлення 2345 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.94 грн |
| 10+ | 67.04 грн |
| 25+ | 60.78 грн |
| 100+ | 50.60 грн |
| 250+ | 47.51 грн |
| 500+ | 45.66 грн |
| 1000+ | 43.40 грн |
| MARS1-AR0231AT7-GEVB |
|
Виробник: onsemi
Description: AUTOMOTIVE IMAGE SENSOR EVALBOAR
Contents: Board(s)
Part Status: Active
Sensing Range: 2.3 Megapixel
Supplied Contents: Board(s)
Utilized IC / Part: AR0231AT
Sensor Type: Image Sensor
Interface: Parallel, Serial
Sensitivity: 40fps
Packaging: Bulk
Description: AUTOMOTIVE IMAGE SENSOR EVALBOAR
Contents: Board(s)
Part Status: Active
Sensing Range: 2.3 Megapixel
Supplied Contents: Board(s)
Utilized IC / Part: AR0231AT
Sensor Type: Image Sensor
Interface: Parallel, Serial
Sensitivity: 40fps
Packaging: Bulk
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 23624.52 грн |
| SPZTA42T1G |
|
Виробник: onsemi
Description: TRANS NPN 300V 0.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
Description: TRANS NPN 300V 0.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
товару немає в наявності
В кошику
од. на суму грн.
| SZMM5Z30VT1G |
|
Виробник: onsemi
Description: DIODE ZENER 30V 500MW SOD523
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±6.7%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 30V 500MW SOD523
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-523
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 30 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±6.7%
Packaging: Cut Tape (CT)
на замовлення 41935 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.79 грн |
| 25+ | 12.52 грн |
| 100+ | 7.15 грн |
| 500+ | 6.65 грн |
| 1000+ | 6.59 грн |
| AR0239SRSC00SUEAH3-GEVB |
|
Виробник: onsemi
Description: 2MP 1/3 CIS 0 DEG CRARGB
Packaging: Bulk
Contents: Board(s)
Sensor Type: Image Sensor
Utilized IC / Part: AR0239SR
Supplied Contents: Board(s)
Part Status: Active
Description: 2MP 1/3 CIS 0 DEG CRARGB
Packaging: Bulk
Contents: Board(s)
Sensor Type: Image Sensor
Utilized IC / Part: AR0239SR
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 26693.16 грн |
| FCD360N65S3R0 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
Description: MOSFET N-CH 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FCH125N65S3R0-F155 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
на замовлення 432 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 536.81 грн |
| 30+ | 299.14 грн |
| 120+ | 251.32 грн |
| FCMT250N65S3 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 12A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Description: MOSFET N-CH 650V 12A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 139.64 грн |
| FCP125N65S3R0 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
на замовлення 770 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 394.09 грн |
| 50+ | 199.49 грн |
| 100+ | 182.09 грн |
| 500+ | 142.28 грн |
| FCPF190N65S3R0L |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 17A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
Description: MOSFET N-CH 650V 17A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| FCPF600N65S3R0L |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 6A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V
Description: MOSFET N-CH 650V 6A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| FDBL86066-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 185A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 185A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 119.45 грн |
| FDMS4D0N12C |
|
Виробник: onsemi
Description: MOSFET N-CH 120V 18.5A/114A 8QFN
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 370A
Power Dissipation (Max): 2.7W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 67A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 114A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 120V 18.5A/114A 8QFN
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 370A
Power Dissipation (Max): 2.7W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 67A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 114A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FFSD1065A |
|
Виробник: onsemi
Description: 650V 10A SIC SBD
Description: 650V 10A SIC SBD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FFSH1665A |
|
Виробник: onsemi
Description: DIODE SIL CARB 650V 23A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 887pF @ 1V, 100kHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 23A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 887pF @ 1V, 100kHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| FFSH2065A |
|
Виробник: onsemi
Description: DIODE SIL CARB 650V 25A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1085pF @ 1V, 100kHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 25A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1085pF @ 1V, 100kHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 227 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 590.73 грн |
| 30+ | 332.68 грн |
| 120+ | 280.86 грн |
| FFSH30120A |
|
Виробник: onsemi
Description: DIODE SIL CARB 1.2KV 46A TO247-2
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 46A
Capacitance @ Vr, F: 1740pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Description: DIODE SIL CARB 1.2KV 46A TO247-2
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 46A
Capacitance @ Vr, F: 1740pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| FFSH4065A |
|
Виробник: onsemi
Description: DIODE SIL CARB 650V 48A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1989pF @ 1V, 100kHz
Current - Average Rectified (Io): 48A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 48A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1989pF @ 1V, 100kHz
Current - Average Rectified (Io): 48A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 551 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 872.22 грн |
| 30+ | 508.76 грн |
| 120+ | 436.22 грн |
| 510+ | 406.88 грн |
| FFSPF1065A |
|
Виробник: onsemi
Description: DIODE SIC 650V 10A TO220F2FS
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220F-2FS
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE SIC 650V 10A TO220F2FS
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220F-2FS
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 575pF @ 1V, 100kHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
на замовлення 930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 356.03 грн |
| 50+ | 179.31 грн |
| 100+ | 163.52 грн |
| 500+ | 127.47 грн |
| FFSPF2065A |
|
Виробник: onsemi
Description: DIODE SIC 650V 20A TO220F2FS
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1085pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIC 650V 20A TO220F2FS
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1085pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220F-2FS
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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| FGH40T120SQDNL4 |
|
Виробник: onsemi
Description: IGBT TRENCH FS 1200V 160A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 46ns/220ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 221 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 454 W
Description: IGBT TRENCH FS 1200V 160A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 46ns/220ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 221 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 454 W
на замовлення 205 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 695.40 грн |
| 30+ | 396.34 грн |
| 120+ | 336.32 грн |
| FGH60T65SQD-F155 |
|
Виробник: onsemi
Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20.8ns/102ns
Switching Energy: 227µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 4.7Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 333 W
Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20.8ns/102ns
Switching Energy: 227µJ (on), 100µJ (off)
Test Condition: 400V, 15A, 4.7Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 333 W
на замовлення 1201 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 441.66 грн |
| 30+ | 242.23 грн |
| 120+ | 202.01 грн |
| 510+ | 161.91 грн |
| 1020+ | 158.55 грн |
| FODM3052V-NF098 |
|
Виробник: onsemi
Description: 4SO RP TRIAC VDE
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 450µA (Typ)
Supplier Device Package: 4-MFP
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
Description: 4SO RP TRIAC VDE
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 450µA (Typ)
Supplier Device Package: 4-MFP
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 2982 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.35 грн |
| 10+ | 86.66 грн |
| 100+ | 62.05 грн |
| 500+ | 49.15 грн |
| 1000+ | 46.35 грн |
| FSUSB242UCX |
Виробник: onsemi
Description: TYPE C USB PROTECT SWITCH
Features: Break-Before-Make, USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 1GHz
Supplier Device Package: 9-WLCSP (1.2x1.2)
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Not For New Designs
Number of Channels: 2
Description: TYPE C USB PROTECT SWITCH
Features: Break-Before-Make, USB 2.0
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 1GHz
Supplier Device Package: 9-WLCSP (1.2x1.2)
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Not For New Designs
Number of Channels: 2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FUSB302BGEVB |
|
Виробник: onsemi
Description: EVAL BOARD FOR FUSB302B
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Contents: Board(s)
Utilized IC / Part: FUSB302B
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL BOARD FOR FUSB302B
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Contents: Board(s)
Utilized IC / Part: FUSB302B
Supplied Contents: Board(s)
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6649.50 грн |
| FUSB302TGEVB |
|
Виробник: onsemi
Description: EVAL BOARD FOR FUSB302T
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Contents: Board(s)
Utilized IC / Part: FUSB302T
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL BOARD FOR FUSB302T
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Contents: Board(s)
Utilized IC / Part: FUSB302T
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6649.50 грн |
| FUSB307BGEVB |
|
Виробник: onsemi
Description: EVAL BOARD FOR FUSB307B
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Utilized IC / Part: FUSB307B
Supplied Contents: Board(s)
Description: EVAL BOARD FOR FUSB307B
Packaging: Bulk
Function: USB Type-C®
Type: Interface
Utilized IC / Part: FUSB307B
Supplied Contents: Board(s)
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| FUSB307BMPX |
|
Виробник: onsemi
Description: IC USB CONTROLLER I2C 16WQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 16-WQFN (3x3)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC USB CONTROLLER I2C 16WQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Function: Controller
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Protocol: USB
Standards: USB 3.0
Supplier Device Package: 16-WQFN (3x3)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 104.77 грн |
| 6000+ | 98.98 грн |
| LC709203FXE-05MH |
|
Виробник: onsemi
Description: IC BATT MON LI-ION 1CELL 9WLCSP
Description: IC BATT MON LI-ION 1CELL 9WLCSP
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| LV8548MCSLDGEVK |
|
Виробник: onsemi
Description: EVAL BOARD FOR LV8548MC
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: LV8548MC
Supplied Contents: Board(s)
Primary Attributes: Motors (DC)
Description: EVAL BOARD FOR LV8548MC
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: LV8548MC
Supplied Contents: Board(s)
Primary Attributes: Motors (DC)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5879.57 грн |
| NCD5702DR2G |
|
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 9.2ns, 7.9ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.75V, 4.3V
Current - Peak Output (Source, Sink): 7.8A, 6.8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 9.2ns, 7.9ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.75V, 4.3V
Current - Peak Output (Source, Sink): 7.8A, 6.8A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| NCP1075ABP100G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 14 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 14 W
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| NCP1075BBP100G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 14 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 14 W
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| NCP1075BBP130G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 14 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 14 W
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од. на суму грн.
| NCP1076BBP100G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Voltage - Start Up: 8.4 V
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-PDIP
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 68%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Power (Watts): 31 W
Part Status: Active
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Voltage - Start Up: 8.4 V
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-PDIP
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 68%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Power (Watts): 31 W
Part Status: Active
на замовлення 26739 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 164.93 грн |
| 10+ | 99.80 грн |
| 50+ | 74.75 грн |
| 100+ | 62.65 грн |
| 250+ | 54.58 грн |
| 500+ | 49.61 грн |
| 1000+ | 44.71 грн |
| 2500+ | 40.30 грн |
| 5000+ | 38.87 грн |
| NCP1076BBP130G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 31 W
Part Status: Active
Voltage - Start Up: 8.4 V
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-PDIP
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 130kHz
Duty Cycle: 68%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 31 W
Part Status: Active
Voltage - Start Up: 8.4 V
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-PDIP
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 130kHz
Duty Cycle: 68%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
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| NCP1077BBP065G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 19 W
Part Status: Active
Voltage - Start Up: 8.4 V
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-PDIP
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 65kHz
Duty Cycle: 68%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 19 W
Part Status: Active
Voltage - Start Up: 8.4 V
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-PDIP
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 65kHz
Duty Cycle: 68%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
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| NCP1077BBP130G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 19 W
Part Status: Active
Voltage - Start Up: 8.4 V
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-PDIP
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 130kHz
Duty Cycle: 68%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 19 W
Part Status: Active
Voltage - Start Up: 8.4 V
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-PDIP
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 130kHz
Duty Cycle: 68%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
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| NCP1079BBP130G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 41 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 41 W
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| NCP1239KD65R2G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.8V ~ 35V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Control Features: EN, Soft Start
Part Status: Active
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.8V ~ 35V
Supplier Device Package: 7-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Control Features: EN, Soft Start
Part Status: Active
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 29.58 грн |
| 5000+ | 27.77 грн |
| NCP13992AADR2G |
|
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 20kHz ~ 750kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 20V
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: EN, Frequency Control, Soft Start, Sync
Description: IC OFFLINE SW HALF-BRDG 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 20kHz ~ 750kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 20V
Supplier Device Package: 16-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: EN, Frequency Control, Soft Start, Sync
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Мінімальне замовлення: 2500 шт
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| NCP51530ADR2G |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 2A 8SOIC
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 17V
Applications: General Purpose
Current - Output / Channel: 2A
Current - Peak Output: 2.2A
Technology: Power MOSFET
Voltage - Load: 700V
Supplier Device Package: 8-SOIC
Fault Protection: UVLO
Load Type: Inductive, Capacitive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 2A 8SOIC
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 17V
Applications: General Purpose
Current - Output / Channel: 2A
Current - Peak Output: 2.2A
Technology: Power MOSFET
Voltage - Load: 700V
Supplier Device Package: 8-SOIC
Fault Protection: UVLO
Load Type: Inductive, Capacitive
Part Status: Active
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Мінімальне замовлення: 2500 шт
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| NCP718AMTADJTBG |
|
Виробник: onsemi
Description: IC REG LIN POS ADJ 300MA 6-WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Soft Start
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.49V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
Description: IC REG LIN POS ADJ 300MA 6-WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Max): 5V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Soft Start
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.49V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 300 µA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 25.50 грн |
| 6000+ | 23.96 грн |
| NCS213RSQT2G |
|
Виробник: onsemi
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 40µA
Slew Rate: 1V/µs
Current - Input Bias: 39 µA
Voltage - Input Offset: 5 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 90 kHz
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 26 V
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 40µA
Slew Rate: 1V/µs
Current - Input Bias: 39 µA
Voltage - Input Offset: 5 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 90 kHz
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 26 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 21.23 грн |
| 6000+ | 19.93 грн |
| 9000+ | 19.67 грн |
| NCS333ASQ3T2G |
|
Виробник: onsemi
Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 21µA
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 3.5 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 11 mA
-3db Bandwidth: 60 kHz
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 21µA
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 3.5 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 11 mA
-3db Bandwidth: 60 kHz
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 1287000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 18.71 грн |
| 6000+ | 17.55 грн |
| NL17SZ07EDFT2G |
Виробник: onsemi
Description: IC BUFF 1.65V SC-88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Obsolete
Description: IC BUFF 1.65V SC-88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NOA1213CUTAG |
|
Виробник: onsemi
Description: SENSOR OPT 590NM AMBIENT 6CUDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Wavelength: 590nm
Output Type: Current
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 6-CUDFN (1.6x1.6)
Proximity Detection: No
Description: SENSOR OPT 590NM AMBIENT 6CUDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Wavelength: 590nm
Output Type: Current
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 6-CUDFN (1.6x1.6)
Proximity Detection: No
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| NRVHP820MFDT3G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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од. на суму грн.
| NRVHP820MFDWFT1G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| NRVHP8H200MFDT1G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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| NRVHP8H200MFDT3G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| NRVHP8H200MFDWFT1G |
|
Виробник: onsemi
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 44.91 грн |
| 3000+ | 40.13 грн |
| NSR201MXT5G |
|
Виробник: onsemi
Description: RF DIODE SCHOTTKY 2V 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz
Resistance @ If, F: 18Ohm @ 10mA, 1MHz
Voltage - Peak Reverse (Max): 2V
Supplier Device Package: 2-X2DFN (1x0.6)
Part Status: Active
Current - Max: 50 mA
Description: RF DIODE SCHOTTKY 2V 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz
Resistance @ If, F: 18Ohm @ 10mA, 1MHz
Voltage - Peak Reverse (Max): 2V
Supplier Device Package: 2-X2DFN (1x0.6)
Part Status: Active
Current - Max: 50 mA
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 9.90 грн |
| 16000+ | 9.32 грн |
| NSVF4015SG4T1G |
|
Виробник: onsemi
Description: RF TRANS NPN 12V 10GHZ SC-82FL
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 17dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SC-82FL/MCPH4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: RF TRANS NPN 12V 10GHZ SC-82FL
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 17dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Supplier Device Package: SC-82FL/MCPH4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.02 грн |
| NTHL065N65S3F |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.6mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V
Description: MOSFET N-CH 650V 46A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4.6mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 907.11 грн |
| 30+ | 528.61 грн |
| 120+ | 453.06 грн |
| 510+ | 409.22 грн |
| NTHL110N65S3F |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V
Description: MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V
на замовлення 588 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 626.41 грн |
| 30+ | 354.93 грн |
| 60+ | 325.28 грн |
| 120+ | 281.87 грн |
| 510+ | 262.78 грн |
| NTTFS6H850NTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 70µA
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 70µA
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 31.69 грн |