| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NSVR0340HT1G | onsemi |
Description: DIODE SCHOTTKY 40V 250MA SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 6pF @ 10V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA Current - Reverse Leakage @ Vr: 6 µA @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVR05F40NXT5G | onsemi |
Description: DIODE SCHOTTKY 40V 500MA 2DSNPackaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 35pF @ 10V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: 2-DSN (1x0.6), (0402) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA Current - Reverse Leakage @ Vr: 75 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5350 шт: термін постачання 21-31 дні (днів) |
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NSVR1020MW2T1G | onsemi |
Description: DIODE SCHOTTKY 20V 1A SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 29pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A Current - Reverse Leakage @ Vr: 40 µA @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 64381 шт: термін постачання 21-31 дні (днів) |
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NSVRB521S30T1G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOD523Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVRB751S40T1G | onsemi |
Description: DIODE SCHOTTKY 30V 30MA SOD523Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 500 nA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 492 шт: термін постачання 21-31 дні (днів) |
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NTA4151PT1H | onsemi |
Description: MOSFET P-CH 20V 760MA SC75Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 760mA (Tj) Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V Power Dissipation (Max): 301mW (Tj) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-75, SOT-416 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V |
на замовлення 155939 шт: термін постачання 21-31 дні (днів) |
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NTMFD4C20NT1G | onsemi |
Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.09W, 1.15W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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NTMFS4985NFT1G | onsemi |
Description: MOSFET N-CH 30V 17.5A/65A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 1.63W (Ta), 22.73W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
на замовлення 1258 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C404NLT1G | onsemi |
Description: MOSFET N-CH 40V 52A/370A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V |
на замовлення 241984 шт: термін постачання 21-31 дні (днів) |
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NTR3A052PZT1G | onsemi |
Description: MOSFET P-CH 20V 3.6A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 4.5V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 4 V |
на замовлення 1429 шт: термін постачання 21-31 дні (днів) |
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NTR5105PT1G | onsemi |
Description: MOSFET P-CH 60V 196MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 196mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V Power Dissipation (Max): 347mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 25 V |
на замовлення 182913 шт: термін постачання 21-31 дні (днів) |
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NTS260ESFT3G | onsemi |
Description: DIODE SCHOTTKY 60V 2A SOD123FLPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Current - Reverse Leakage @ Vr: 12 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTSB30U100CTT4G | onsemi |
Description: DIODE ARR SCHOTT 100V 15A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A Current - Reverse Leakage @ Vr: 675 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTTFS4C06NTWG | onsemi |
Description: MOSFET N-CH 30V 11A/67A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 67A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 810mW (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3366 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTTFS4C10NTAG | onsemi |
Description: MOSFET N-CH 30V 8.2A/44A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Power Dissipation (Max): 790mW (Ta), 23.6W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V |
на замовлення 1431 шт: термін постачання 21-31 дні (днів) |
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NTTFS4C10NTWG | onsemi |
Description: MOSFET N-CH 30V 8.2A/44A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Power Dissipation (Max): 790mW (Ta), 23.6W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V |
на замовлення 405 шт: термін постачання 21-31 дні (днів) |
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NTTFS4C13NTAG | onsemi |
Description: MOSFET N-CH 30V 7.2A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V Power Dissipation (Max): 780mW (Ta), 21.5W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V |
на замовлення 552 шт: термін постачання 21-31 дні (днів) |
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NUP2125WTT1G | onsemi |
Description: TVS DIODE 24VWM 50VC SC70-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: CAN Capacitance @ Frequency: 10pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Min) Supplier Device Package: SC-70-3 (SOT323) Bidirectional Channels: 2 Voltage - Breakdown (Min): 26.2V Voltage - Clamping (Max) @ Ipp: 50V Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 19126 шт: термін постачання 21-31 дні (днів) |
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NVC6S5A354PLZT1G | onsemi |
Description: MOSFET P-CH 60V 4A 6CPHPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: 6-CPH Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVD3055-150T4G-VF01 | onsemi |
Description: MOSFET N-CH 60V 9A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4565 шт: термін постачання 21-31 дні (днів) |
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NVD5890NLT4G | onsemi |
Description: MOSFET N-CH 40V 24A/123A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Power Dissipation (Max): 4W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVJD4401NT1G | onsemi |
Description: MOSFET 2N-CH 20V 0.63A SC88Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 42376 шт: термін постачання 21-31 дні (днів) |
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NVMFS4C03NT1G | onsemi |
Description: MOSFET N-CH 30V 31.4A/143A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.4A (Ta), 143A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Power Dissipation (Max): 3.71W (Ta), 77W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 2850 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C426NAFT1G | onsemi |
Description: MOSFET N-CH 40V 41A/235A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 51309 шт: термін постачання 21-31 дні (днів) |
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NVR4501NT1G | onsemi |
Description: MOSFET N-CH 20V 3.2A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.25W (Tj) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15585 шт: термін постачання 21-31 дні (днів) |
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NVS4001NT1G | onsemi |
Description: MOSFET N-CH 30V 270MA SC70-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 5 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 41677 шт: термін постачання 21-31 дні (днів) |
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NVTA7002NT1G | onsemi |
Description: MOSFET N-CH 30V 154MA SC75Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 154mA (Tj) Rds On (Max) @ Id, Vgs: 7Ohm @ 154mA, 4.5V Power Dissipation (Max): 300mW (Tj) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-75, SOT-416 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 33329 шт: термін постачання 21-31 дні (днів) |
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NVTFS4C10NWFTAG | onsemi |
Description: MOSFET N-CH 30V 15.3A/47A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 998 шт: термін постачання 21-31 дні (днів) |
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NVTFS5C670NLTAG | onsemi |
Description: MOSFET N-CH 60V 16A/70A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2450 шт: термін постачання 21-31 дні (днів) |
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PCA9517ADMR2G | onsemi |
Description: IC VOLT LEVEL TRANSLATOR US8Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Number of Channels: 2 Mounting Type: Surface Mount Type: Buffer, ReDriver Operating Temperature: -55°C ~ 125°C Voltage - Supply: 0.9V ~ 5.5V Applications: I2C Current - Supply: 1mA Supplier Device Package: 8-MSOP Part Status: Not For New Designs Capacitance - Input: 5 pF |
на замовлення 5564 шт: термін постачання 21-31 дні (днів) |
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PCA9535ECMTTXG | onsemi |
Description: IC XPNDR 100KHZ I2C SMBUS 24QFNPackaging: Cut Tape (CT) Features: POR Package / Case: 24-WFQFN Exposed Pad Output Type: Open Drain Mounting Type: Surface Mount Interface: I2C, SMBus Number of I/O: 16 Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Clock Frequency: 100 kHz Interrupt Output: Yes Supplier Device Package: 24-QFN (4x4) Current - Output Source/Sink: 25mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1469 шт: термін постачання 21-31 дні (днів) |
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PCA9535EDWR2G | onsemi |
Description: IC XPNDR 100KHZ I2C SMBUS 24SOICPackaging: Cut Tape (CT) Features: POR Package / Case: 24-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Interface: I2C, SMBus Number of I/O: 16 Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Clock Frequency: 100 kHz Interrupt Output: Yes Supplier Device Package: 24-SOIC Current - Output Source/Sink: 10mA, 25mA Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PCA9535EMTTXG | onsemi |
Description: IC XPNDR 100KHZ I2C SMBUS 24QFNPackaging: Cut Tape (CT) Features: POR Package / Case: 24-WFQFN Exposed Pad Output Type: Push-Pull Mounting Type: Surface Mount Interface: I2C, SMBus Number of I/O: 16 Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Clock Frequency: 100 kHz Interrupt Output: Yes Supplier Device Package: 24-QFN (4x4) Current - Output Source/Sink: 10mA, 25mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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PCA9654EDR2G | onsemi |
Description: IC XPNDR 100KHZ I2C 16SOICPackaging: Cut Tape (CT) Features: POR Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: I2C Number of I/O: 8 Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Clock Frequency: 100 kHz Interrupt Output: Yes Supplier Device Package: 16-SOIC Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB751S40T5G | onsemi |
Description: DIODE SCHOTTKY 30V 30MA SOD523Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 500 nA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S2SC4617G | onsemi |
Description: TRANS NPN 50V 0.1A SC75 SOT416Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 125 mW |
на замовлення 2870 шт: термін постачання 21-31 дні (днів) |
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SB05-03Q-TL-E | onsemi |
Description: DIODE SCHOTTKY 30V 500MA 3MCPPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 16pF @ 10V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: 3-MCP Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA Current - Reverse Leakage @ Vr: 30 µA @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SB80W10T-TL-H | onsemi |
Description: DIODE ARRAY SCHOTTKY 100V TPFA |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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SBAS16HT3G | onsemi |
Description: DIODE STANDARD 100V 200MA SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8188 шт: термін постачання 21-31 дні (днів) |
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SBAS16WT1G | onsemi |
Description: DIODE STANDARD 75V 200MA SC703Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2616 шт: термін постачання 21-31 дні (днів) |
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SBAS40-04LT1G | onsemi |
Description: DIODE ARR SCHOTT 40V 120MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 11220 шт: термін постачання 21-31 дні (днів) |
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SBAS40LT1G | onsemi |
Description: DIODE SCHOTTKY 40V 120MA SOT233Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 5pF @ 1V, 1MHz Current - Average Rectified (Io): 120mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SBAT54AWT1G | onsemi |
Description: DIODE ARR SCHOTT 30V 200MA SC703Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBAV99LT3G | onsemi |
Description: DIODE ARR GP 100V 215MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 215mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 29910 шт: термін постачання 21-31 дні (днів) |
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SBC807-16LT1G | onsemi |
Description: TRANS PNP 45V 0.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBC807-25LT3G | onsemi |
Description: TRANS PNP 45V 0.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SBC807-25WT1G | onsemi |
Description: TRANS PNP 45V 0.5A SC70-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 460 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SBC807-40LT1G | onsemi |
Description: TRANS PNP 45V 0.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBC807-40LT3G | onsemi |
Description: TRANS PNP 45V 0.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBC807-40WT1G | onsemi |
Description: TRANS PNP 45V 0.5A SC70-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 460 mW Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBC847AWT1G | onsemi |
Description: TRANS NPN 45V 0.1A SC70-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 150 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBC847BPDW1T3G | onsemi |
Description: TRANS NPN/PNP 45V 0.1A SC88/SC70Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBC847BPDXV6T1G | onsemi |
Description: TRANS NPN/PNP 45V 100MA SOT-563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 357mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-563 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 95163 шт: термін постачання 21-31 дні (днів) |
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SBC847BWT1G | onsemi |
Description: TRANS NPN 45V 0.1A SC70-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 150 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8710 шт: термін постачання 21-31 дні (днів) |
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SBC856ALT1G | onsemi |
Description: TRANS PNP 65V 0.1A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3567 шт: термін постачання 21-31 дні (днів) |
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SBC856BLT3G | onsemi |
Description: TRANS PNP 65V 0.1A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBC856BWT1G | onsemi |
Description: TRANS PNP 65V 0.1A SC70-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 150 mW Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBC857BDW1T1G | onsemi |
Description: TRANS 2PNP 45V 100MA SC88/SC70Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 42469 шт: термін постачання 21-31 дні (днів) |
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SBC857BWT1G | onsemi |
Description: TRANS PNP 45V 0.1A SC70-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 150 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16610 шт: термін постачання 21-31 дні (днів) |
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SBC857CDW1T1G | onsemi |
Description: TRANS 2PNP 45V 100MA SC88/SC70Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2380 шт: термін постачання 21-31 дні (днів) |
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| NSVR0340HT1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NSVR05F40NXT5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 500MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 500MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5350 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.32 грн |
| 17+ | 17.81 грн |
| 100+ | 14.15 грн |
| 500+ | 10.01 грн |
| 1000+ | 8.69 грн |
| 2000+ | 8.06 грн |
| NSVR1020MW2T1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 64381 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.08 грн |
| 23+ | 13.30 грн |
| 100+ | 10.03 грн |
| 500+ | 6.37 грн |
| 1000+ | 6.10 грн |
| NSVRB521S30T1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NSVRB751S40T1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 30MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 492 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.49 грн |
| 40+ | 7.52 грн |
| 100+ | 4.63 грн |
| NTA4151PT1H |
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Виробник: onsemi
Description: MOSFET P-CH 20V 760MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Power Dissipation (Max): 301mW (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V
Description: MOSFET P-CH 20V 760MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Power Dissipation (Max): 301mW (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V
на замовлення 155939 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.88 грн |
| 16+ | 19.92 грн |
| 100+ | 10.06 грн |
| 500+ | 8.37 грн |
| 1000+ | 6.51 грн |
| NTMFD4C20NT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.09W, 1.15W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.09W, 1.15W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 149.09 грн |
| NTMFS4985NFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 17.5A/65A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 1.63W (Ta), 22.73W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Description: MOSFET N-CH 30V 17.5A/65A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 1.63W (Ta), 22.73W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
на замовлення 1258 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.91 грн |
| 10+ | 78.70 грн |
| 100+ | 61.20 грн |
| 500+ | 48.68 грн |
| NTMFS5C404NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 52A/370A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Description: MOSFET N-CH 40V 52A/370A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
на замовлення 241984 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 292.71 грн |
| 10+ | 237.60 грн |
| 100+ | 181.75 грн |
| 500+ | 151.45 грн |
| NTR3A052PZT1G |
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Виробник: onsemi
Description: MOSFET P-CH 20V 3.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 4 V
Description: MOSFET P-CH 20V 3.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 4 V
на замовлення 1429 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.34 грн |
| 11+ | 28.26 грн |
| 100+ | 19.65 грн |
| 500+ | 14.39 грн |
| 1000+ | 11.70 грн |
| NTR5105PT1G |
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Виробник: onsemi
Description: MOSFET P-CH 60V 196MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 196mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V
Power Dissipation (Max): 347mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 25 V
Description: MOSFET P-CH 60V 196MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 196mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V
Power Dissipation (Max): 347mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 25 V
на замовлення 182913 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.39 грн |
| 32+ | 9.47 грн |
| 100+ | 5.89 грн |
| 500+ | 4.04 грн |
| 1000+ | 3.57 грн |
| NTS260ESFT3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
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| NTSB30U100CTT4G |
![]() |
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 675 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 675 µA @ 100 V
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| NTTFS4C06NTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 11A/67A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 810mW (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3366 pF @ 15 V
Description: MOSFET N-CH 30V 11A/67A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Power Dissipation (Max): 810mW (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3366 pF @ 15 V
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| NTTFS4C10NTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
на замовлення 1431 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.37 грн |
| 10+ | 45.17 грн |
| 100+ | 30.84 грн |
| 500+ | 22.44 грн |
| NTTFS4C10NTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
на замовлення 405 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 106.16 грн |
| 10+ | 64.49 грн |
| 100+ | 42.85 грн |
| NTTFS4C13NTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 7.2A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Power Dissipation (Max): 780mW (Ta), 21.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Description: MOSFET N-CH 30V 7.2A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Power Dissipation (Max): 780mW (Ta), 21.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
на замовлення 552 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 45.27 грн |
| 10+ | 38.03 грн |
| 100+ | 26.31 грн |
| 500+ | 20.63 грн |
| NUP2125WTT1G |
![]() |
Виробник: onsemi
Description: TVS DIODE 24VWM 50VC SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SC-70-3 (SOT323)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 24VWM 50VC SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SC-70-3 (SOT323)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 19126 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.34 грн |
| 11+ | 28.34 грн |
| 100+ | 19.66 грн |
| 500+ | 14.40 грн |
| 1000+ | 11.71 грн |
| NVC6S5A354PLZT1G |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 60V 4A 6CPH
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 6-CPH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 4A 6CPH
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 6-CPH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
Qualification: AEC-Q101
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| NVD3055-150T4G-VF01 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4565 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 110.06 грн |
| 10+ | 67.50 грн |
| 100+ | 45.14 грн |
| 500+ | 33.36 грн |
| 1000+ | 30.46 грн |
| NVD5890NLT4G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 24A/123A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 24A/123A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
| NVJD4401NT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 20V 0.63A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 20V 0.63A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 42376 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.32 грн |
| 10+ | 35.55 грн |
| 100+ | 23.07 грн |
| 500+ | 16.60 грн |
| 1000+ | 14.97 грн |
| NVMFS4C03NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 31.4A/143A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.4A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 3.71W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 31.4A/143A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.4A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 3.71W (Ta), 77W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
Qualification: AEC-Q101
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 191.24 грн |
| 10+ | 120.64 грн |
| 100+ | 83.18 грн |
| 500+ | 63.05 грн |
| NVMFS5C426NAFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 41A/235A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 41A/235A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 51309 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 317.69 грн |
| 10+ | 201.74 грн |
| 100+ | 142.63 грн |
| 500+ | 110.16 грн |
| NVR4501NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 20V 3.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 3.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15585 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.74 грн |
| 10+ | 30.44 грн |
| 100+ | 19.56 грн |
| 500+ | 13.96 грн |
| 1000+ | 12.54 грн |
| NVS4001NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 270MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 5 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 270MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 41677 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.88 грн |
| 18+ | 17.36 грн |
| 100+ | 10.95 грн |
| 500+ | 7.66 грн |
| 1000+ | 6.81 грн |
| NVTA7002NT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 154MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154mA (Tj)
Rds On (Max) @ Id, Vgs: 7Ohm @ 154mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 154MA SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154mA (Tj)
Rds On (Max) @ Id, Vgs: 7Ohm @ 154mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 33329 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.42 грн |
| 22+ | 13.68 грн |
| 100+ | 8.57 грн |
| 500+ | 5.96 грн |
| 1000+ | 5.28 грн |
| NVTFS4C10NWFTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 15.3A/47A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 15.3A/47A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 998 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.13 грн |
| 10+ | 72.53 грн |
| 100+ | 55.41 грн |
| 500+ | 42.44 грн |
| NVTFS5C670NLTAG |
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Виробник: onsemi
Description: MOSFET N-CH 60V 16A/70A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 16A/70A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 35A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 120.21 грн |
| 10+ | 88.77 грн |
| 100+ | 60.45 грн |
| 500+ | 45.21 грн |
| PCA9517ADMR2G |
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Виробник: onsemi
Description: IC VOLT LEVEL TRANSLATOR US8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Number of Channels: 2
Mounting Type: Surface Mount
Type: Buffer, ReDriver
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 0.9V ~ 5.5V
Applications: I2C
Current - Supply: 1mA
Supplier Device Package: 8-MSOP
Part Status: Not For New Designs
Capacitance - Input: 5 pF
Description: IC VOLT LEVEL TRANSLATOR US8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Number of Channels: 2
Mounting Type: Surface Mount
Type: Buffer, ReDriver
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 0.9V ~ 5.5V
Applications: I2C
Current - Supply: 1mA
Supplier Device Package: 8-MSOP
Part Status: Not For New Designs
Capacitance - Input: 5 pF
на замовлення 5564 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 171.72 грн |
| 10+ | 148.75 грн |
| 25+ | 140.35 грн |
| 100+ | 105.37 грн |
| 250+ | 92.20 грн |
| 500+ | 89.56 грн |
| 1000+ | 69.96 грн |
| PCA9535ECMTTXG |
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Виробник: onsemi
Description: IC XPNDR 100KHZ I2C SMBUS 24QFN
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 24-WFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C, SMBus
Number of I/O: 16
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 24-QFN (4x4)
Current - Output Source/Sink: 25mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 100KHZ I2C SMBUS 24QFN
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 24-WFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C, SMBus
Number of I/O: 16
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 24-QFN (4x4)
Current - Output Source/Sink: 25mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1469 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 238.07 грн |
| 10+ | 147.25 грн |
| 25+ | 126.76 грн |
| 100+ | 97.68 грн |
| 250+ | 87.48 грн |
| 500+ | 81.30 грн |
| 1000+ | 74.94 грн |
| PCA9535EDWR2G |
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Виробник: onsemi
Description: IC XPNDR 100KHZ I2C SMBUS 24SOIC
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C, SMBus
Number of I/O: 16
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 24-SOIC
Current - Output Source/Sink: 10mA, 25mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC XPNDR 100KHZ I2C SMBUS 24SOIC
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C, SMBus
Number of I/O: 16
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 24-SOIC
Current - Output Source/Sink: 10mA, 25mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| PCA9535EMTTXG |
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Виробник: onsemi
Description: IC XPNDR 100KHZ I2C SMBUS 24QFN
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 24-WFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C, SMBus
Number of I/O: 16
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 24-QFN (4x4)
Current - Output Source/Sink: 10mA, 25mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 100KHZ I2C SMBUS 24QFN
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 24-WFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C, SMBus
Number of I/O: 16
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 24-QFN (4x4)
Current - Output Source/Sink: 10mA, 25mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PCA9654EDR2G |
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Виробник: onsemi
Description: IC XPNDR 100KHZ I2C 16SOIC
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 100KHZ I2C 16SOIC
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| RB751S40T5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Description: DIODE SCHOTTKY 30V 30MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| S2SC4617G |
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Виробник: onsemi
Description: TRANS NPN 50V 0.1A SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 125 mW
Description: TRANS NPN 50V 0.1A SC75 SOT416
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 125 mW
на замовлення 2870 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.76 грн |
| 20+ | 15.41 грн |
| 100+ | 9.68 грн |
| 500+ | 6.75 грн |
| 1000+ | 5.99 грн |
| SB05-03Q-TL-E |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 500MA 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-MCP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
Description: DIODE SCHOTTKY 30V 500MA 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-MCP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.76 грн |
| 23+ | 13.53 грн |
| 100+ | 12.39 грн |
| 500+ | 10.42 грн |
| SB80W10T-TL-H |
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Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 100V TPFA
Description: DIODE ARRAY SCHOTTKY 100V TPFA
на замовлення 42 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 159.24 грн |
| 10+ | 137.48 грн |
| SBAS16HT3G |
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Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 200MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8188 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 8.59 грн |
| 59+ | 5.11 грн |
| 100+ | 3.13 грн |
| 500+ | 2.12 грн |
| 1000+ | 1.85 грн |
| 2000+ | 1.63 грн |
| 5000+ | 1.36 грн |
| SBAS16WT1G |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 75V 200MA SC703
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 75V 200MA SC703
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2616 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.98 грн |
| 21+ | 14.88 грн |
| 100+ | 9.35 грн |
| 500+ | 6.51 грн |
| 1000+ | 5.77 грн |
| SBAS40-04LT1G |
![]() |
Виробник: onsemi
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11220 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.17 грн |
| 31+ | 10.00 грн |
| 100+ | 6.23 грн |
| 500+ | 4.28 грн |
| 1000+ | 3.78 грн |
| SBAS40LT1G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 120MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 120MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.49 грн |
| 41+ | 7.44 грн |
| 100+ | 4.58 грн |
| 500+ | 3.12 грн |
| 1000+ | 2.74 грн |
| SBAT54AWT1G |
![]() |
Виробник: onsemi
Description: DIODE ARR SCHOTT 30V 200MA SC703
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOTT 30V 200MA SC703
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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| SBAV99LT3G |
![]() |
Виробник: onsemi
Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 29910 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.15 грн |
| 52+ | 5.79 грн |
| 100+ | 3.59 грн |
| 500+ | 2.43 грн |
| 1000+ | 2.13 грн |
| 2000+ | 1.87 грн |
| 5000+ | 1.57 грн |
| SBC807-16LT1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| SBC807-25LT3G |
![]() |
Виробник: onsemi
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 19.51 грн |
| 26+ | 11.73 грн |
| 100+ | 7.34 грн |
| 500+ | 5.08 грн |
| 1000+ | 4.49 грн |
| 2000+ | 3.99 грн |
| 5000+ | 3.40 грн |
| SBC807-25WT1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 45V 0.5A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.5A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.73 грн |
| 27+ | 11.27 грн |
| 100+ | 7.02 грн |
| 500+ | 4.85 грн |
| 1000+ | 4.29 грн |
| SBC807-40LT1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
| SBC807-40LT3G |
![]() |
Виробник: onsemi
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| SBC807-40WT1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 45V 0.5A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.5A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
Grade: Automotive
Qualification: AEC-Q101
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| SBC847AWT1G |
![]() |
Виробник: onsemi
Description: TRANS NPN 45V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 45V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBC847BPDW1T3G |
![]() |
Виробник: onsemi
Description: TRANS NPN/PNP 45V 0.1A SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN/PNP 45V 0.1A SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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| SBC847BPDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS NPN/PNP 45V 100MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN/PNP 45V 100MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 95163 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.91 грн |
| 15+ | 21.35 грн |
| 100+ | 13.53 грн |
| 500+ | 9.53 грн |
| 1000+ | 8.51 грн |
| 2000+ | 7.65 грн |
| SBC847BWT1G |
![]() |
Виробник: onsemi
Description: TRANS NPN 45V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 45V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8710 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.15 грн |
| 50+ | 6.01 грн |
| 100+ | 3.69 грн |
| 500+ | 2.51 грн |
| 1000+ | 2.20 грн |
| SBC856ALT1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3567 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.86 грн |
| 24+ | 12.55 грн |
| 100+ | 7.85 грн |
| 500+ | 5.44 грн |
| 1000+ | 4.82 грн |
| SBC856BLT3G |
![]() |
Виробник: onsemi
Description: TRANS PNP 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SBC856BWT1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 65V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SBC857BDW1T1G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP 45V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2PNP 45V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 42469 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.27 грн |
| 39+ | 7.82 грн |
| 100+ | 4.87 грн |
| 500+ | 3.33 грн |
| 1000+ | 2.93 грн |
| SBC857BWT1G |
![]() |
Виробник: onsemi
Description: TRANS PNP 45V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16610 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.93 грн |
| 46+ | 6.54 грн |
| 100+ | 4.01 грн |
| 500+ | 2.73 грн |
| 1000+ | 2.39 грн |
| SBC857CDW1T1G |
![]() |
Виробник: onsemi
Description: TRANS 2PNP 45V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2PNP 45V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2380 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.32 грн |
| 19+ | 16.09 грн |
| 100+ | 10.11 грн |
| 500+ | 7.06 грн |
| 1000+ | 6.27 грн |



























