| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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NVMFS5C638NLT1G | onsemi |
Description: MOSFET N-CH 60V 26A/133A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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NVMFS6H800NT1G | onsemi |
Description: MOSFET N-CH 80V 28A/203A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 330µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 228000 шт: термін постачання 21-31 дні (днів) |
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AR0130CSSC00SPCA0-DPBR2 | onsemi |
Description: 1.2 MP 1/3 CISQualification: AEC-Q100 Frames per Second: 60 Grade: Automotive Supplier Device Package: 48-ILCC (10x10) Active Pixel Array: 1280H x 960V Pixel Size: 3.75µm x 3.75µm Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Operating Temperature: -30°C ~ 70°C Type: CMOS Package / Case: 48-LCC Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0134CSSM00SPCA0-DPBR2 | onsemi |
Description: 1.2 MP 1/3 GS CISFrames per Second: 60.0 Part Status: Obsolete Supplier Device Package: 48-ILCC (10x10) Active Pixel Array: 1280H x 960V Pixel Size: 3.75µm x 3.75µm Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Operating Temperature: -30°C ~ 70°C Type: CMOS Package / Case: 48-LCC Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0144CSSM00SUKA0-CPBR2 | onsemi |
Description: 1MP 1/4 CIS SOActive Pixel Array: 1280H x 800V Pixel Size: 3µm x 3µm Type: CMOS Package / Case: 69-WFBGA, CSPBGA Packaging: Tray Frames per Second: 60 Supplier Device Package: 69-ODCSP (5.55x5.57) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AR0230CSSC00SUEA0-DPBR2 | onsemi |
Description: 2 MP 1/3 CISFrames per Second: 60.0 Supplier Device Package: 80-IBGA (10x10) Active Pixel Array: 1928H x 1088V Pixel Size: 3µm x 3µm Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Operating Temperature: -30°C ~ 85°C Type: CMOS Package / Case: 80-BGA Packaging: Tray |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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AR0238CSSC12SHRA0-DP2 | onsemi |
Description: 2MP 1/3 CIS SOFrames per Second: 60 Supplier Device Package: 48-PLCC (11.43x11.43) Active Pixel Array: 1928H x 1088V Pixel Size: 3µm x 3µm Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Operating Temperature: -30°C ~ 85°C (TJ) Type: CMOS Package / Case: 48-PLCC Packaging: Tray |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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AR1335CSSC11SMKA0-CP2 | onsemi |
Description: 13MP 1/3 CIS SOFrames per Second: 30.0 Supplier Device Package: 63-ODCSP (6.29x5.69) Active Pixel Array: 4208H x 3120V Pixel Size: 1.1µm x 1.1µm Type: CMOS Package / Case: 63-WFBGA, CSPBGA Packaging: Tray |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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ASX340AT2C00XPED0-DPBR2 | onsemi |
Description: VGA 1/4 SOCFrames per Second: 60.0 Supplier Device Package: 63-IBGA (7.5x7.5) Active Pixel Array: 728H x 560V Voltage - Supply: 1.7V ~ 1.95V, 2.66V ~ 2.94V Operating Temperature: -40°C ~ 105°C Type: CMOS Package / Case: 63-LFBGA Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MT9V024IA7XTM-DP2 | onsemi |
Description: VGA 1/3 GS CIS |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
| FDB9506L-F085 | onsemi |
Description: MOSFET N-CH 30V Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 24.5A (Ta), 110A (Tc) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AR0237ATSC12XUEA0-DPBR | onsemi |
Description: IMAGE SENSOR RGB 80-IBGAPackaging: Tray Package / Case: 80-LBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 3µm x 3µm Active Pixel Array: 1928H x 1088V Supplier Device Package: 80-IBGA (10x10) Grade: Automotive Part Status: Active Frames per Second: 60.0 Qualification: AEC-Q100 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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| AR0237ATSC12XUEA0-DRBR | onsemi |
Description: IMAGE SENSOR RGB 80-IBGAPackaging: Tray Package / Case: 80-LBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 3µm x 3µm Active Pixel Array: 1928H x 1088V Supplier Device Package: 80-IBGA (10x10) Grade: Automotive Part Status: Active Frames per Second: 60.0 Qualification: AEC-Q100 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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FDG6304P-F169 | onsemi |
Description: INTEGRATED CIRCUIT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FDG6304P-X | onsemi | Description: INTEGRATED CIRCUIT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FGD3N60LSDTM-T | onsemi |
Description: IGBT 600V 6A TO-252AAPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 234 ns Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A Supplier Device Package: TO-252AA Td (on/off) @ 25°C: 40ns/600ns Switching Energy: 250µJ (on), 1mJ (off) Test Condition: 480V, 3A, 470Ohm, 10V Gate Charge: 12.5 nC Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 25 A Power - Max: 40 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MT9D112D00STCK15AC1-200 | onsemi |
Description: INTEGRATED CIRCUIT Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MT9D113D00STCK25AC1-200 | onsemi |
Description: INTEGRATED CIRCUIT Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MT9D115D00STCK25AC1-200 | onsemi |
Description: INTEGRATED CIRCUITPackaging: Bulk Package / Case: Die Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 1.75µm x 1.75µm Active Pixel Array: 1600H x 1200V Supplier Device Package: Die Part Status: Obsolete Frames per Second: 30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MT9M113D00STCK24AC1-200 | onsemi |
Description: INTEGRATED CIRCUIT Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MT9P017D00STCC48AC1-200 | onsemi |
Description: INTEGRATED CIRCUIT Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MT9P111D00STCK28AC1-200 | onsemi |
Description: INTEGRATED CIRCUITPackaging: Bulk Package / Case: Die Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V Pixel Size: 1.4µm x 1.4µm Active Pixel Array: 2592H x 1944V Supplier Device Package: Die Part Status: Obsolete Frames per Second: 30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MT9T111D00STCK26AC1-200 | onsemi |
Description: INTEGRATED CIRCUIT Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NIS5132MN1TXG-L701 | onsemi |
Description: IC ELECTRONIC FUSE 10DFNPackaging: Bulk Package / Case: 10-VFDFN Exposed Pad Sensing Method: High-Side Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 9V ~ 18V Current - Output: 3.6A Operating Temperature: -40°C ~ 150°C Supplier Device Package: 10-DFN (3x3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD5111PFCT5G | onsemi |
Description: TVS DIODE 3.3VWM 6.5VC 2WLCSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN53526UC89X | onsemi |
Description: IC REG BUCK PROG 3A 15WLCSPPackaging: Cut Tape (CT) Package / Case: 15-UFBGA, WLCSP Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2.4MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 15-WLCSP (2.02x1.31) Synchronous Rectifier: Yes Voltage - Output (Max): 1.15V Voltage - Input (Min): 2.5V Voltage - Output (Min/Fixed): 1.15V Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NCP339BFCT2G | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSPFeatures: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, WLCSP Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 18mOhm Input Type: Non-Inverting Voltage - Load: 1.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: 6-WLCSP (1.0x1.5) Fault Protection: Reverse Current |
на замовлення 6664 шт: термін постачання 21-31 дні (днів) |
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15GN03CA-TB-E | onsemi |
Description: RF TRANS NPN 10V 1.5GHZ 3-CPPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13dB @ 0.4GHz Power - Max: 200mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 1.5GHz Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz Supplier Device Package: 3-CP Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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15GN03MA-TL-E | onsemi |
Description: RF TRANS NPN 10V 1.5GHZ 3-MCPPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13dB @ 0.4GHz Power - Max: 400mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 1.5GHz Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz Supplier Device Package: 3-MCP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N4006FFG | onsemi |
Description: DIODE STANDARD 800V 1A AXIALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 1684 шт: термін постачання 21-31 дні (днів) |
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1N4007FFG | onsemi |
Description: DIODE STANDARD 1000V 1A AXIALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 2184 шт: термін постачання 21-31 дні (днів) |
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1N5384BRLG | onsemi |
Description: DIODE ZENER 160V 5W AXIALTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 350 Ohms Supplier Device Package: Axial Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 122 V |
на замовлення 1496 шт: термін постачання 21-31 дні (днів) |
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1N5946BRLG | onsemi |
Description: DIODE ZENER 75V 3W AXIAL |
на замовлення 1659 шт: термін постачання 21-31 дні (днів) |
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1PMT5935BT1G | onsemi |
Description: DIODE ZENER 27V 3.2W POWERMITETolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 23 Ohms Supplier Device Package: Powermite Power - Max: 3.2 W Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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1SV263-TL-E | onsemi |
Description: RF DIODE PIN 50V 100MW 3MCPPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Diode Type: PIN - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: 3-MCP Current - Max: 50 mA Power Dissipation (Max): 100 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SV264-TL-E | onsemi |
Description: RF DIODE PIN 50V 100MW 3MCPPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: 3-MCP Current - Max: 50 mA Power Dissipation (Max): 100 mW |
на замовлення 4506 шт: термін постачання 21-31 дні (днів) |
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1SV267-TB-E | onsemi |
Description: RF DIODE PIN 50V 150MW 3CPPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: 3-CP Part Status: Obsolete Current - Max: 50 mA Power Dissipation (Max): 150 mW |
на замовлення 5721 шт: термін постачання 21-31 дні (днів) |
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2SA1593T-TL-E | onsemi |
Description: TRANS PNP 100V 2A TP-FAPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: TP-FA Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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2SA2012-TD-E | onsemi |
Description: TRANS PNP 30V 5A PCPPower - Max: 3.5 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: PCP Frequency - Transition: 420MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 210mV @ 30mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SB1121S-TD-E | onsemi |
Description: TRANS PNP 25V 2A PCPPower - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: PCP Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 830 шт: термін постачання 21-31 дні (днів) |
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2SB1205S-TL-E | onsemi |
Description: TRANS PNP 20V 5A TP-FAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V Frequency - Transition: 320MHz Supplier Device Package: TP-FA Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1 W |
на замовлення 649 шт: термін постачання 21-31 дні (днів) |
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2SB1302T-TD-E | onsemi |
Description: TRANS PNP 20V 5A PCPPackaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 320MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.3 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SB815-7-TB-E | onsemi |
Description: TRANS PNP 15V 0.7A 3-CPPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V Frequency - Transition: 250MHz Supplier Device Package: 3-CP Part Status: Active Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 200 mW |
на замовлення 2920 шт: термін постачання 21-31 дні (днів) |
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2SC4134S-TL-E | onsemi |
Description: TRANS NPN 100V 1A TP-FAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW |
на замовлення 411 шт: термін постачання 21-31 дні (днів) |
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2SC4135S-TL-E | onsemi |
Description: TRANS NPN 100V 2A TPFAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
на замовлення 262 шт: термін постачання 21-31 дні (днів) |
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2SC5964-TD-H | onsemi |
Description: TRANS NPN 50V 3A PCPPackaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 380MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 3.5 W |
на замовлення 13473 шт: термін постачання 21-31 дні (днів) |
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2SD1628G-TD-H | onsemi |
Description: TRANS NPN 20V 5A PCP Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: PCP Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SD1803T-TL-H | onsemi |
Description: TRANS NPN 50V 5A TP-FAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 180MHz Supplier Device Package: TP-FA Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 572 шт: термін постачання 21-31 дні (днів) |
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2SD1816S-TL-E | onsemi |
Description: TRANS NPN 100V 4A TP-FAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V Frequency - Transition: 180MHz Supplier Device Package: TP-FA Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
на замовлення 1580 шт: термін постачання 21-31 дні (днів) |
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2SD1816S-TL-H | onsemi |
Description: TRANS NPN 100V 4A TP-FAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V Frequency - Transition: 180MHz Supplier Device Package: TP-FA Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74FST3257MNTWG | onsemi |
Description: IC MUX/DEMUX 4 X 2:1 16-QFNPackaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Circuit: 4 x 2:1 Type: Multiplexer/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 16-QFN (2.5x3.5) Part Status: Active |
на замовлення 4013 шт: термін постачання 21-31 дні (днів) |
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74LVC540ADTR2G | onsemi |
Description: IC BUFFER INVERT 3.6V 20TSSOP Supplier Device Package: 20-TSSOP Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 8 Voltage - Supply: 1.2V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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7WBD3306USG | onsemi |
Description: IC BUS SWITCH 1 X 1:1 US8Supplier Device Package: US8 Voltage Supply Source: Single Supply Independent Circuits: 2 Voltage - Supply: 4V ~ 5.5V Operating Temperature: -55°C ~ 125°C Type: Bus Switch Circuit: 1 x 1:1 Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Cut Tape (CT) |
на замовлення 3072 шт: термін постачання 21-31 дні (днів) |
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ADM1023ARQZ-REEL | onsemi |
Description: IC SENSOR TEMP DUAL PREC 16QSOPPart Status: Active Supplier Device Package: 16-QSOP Output Fan: No Output Alarm: Yes Topology: ADC, Comparator, Multiplexer, Register Bank Sensing Temperature: 0°C ~ 120°C, External Sensor Sensor Type: Internal and External Voltage - Supply: 3V ~ 5.5V Operating Temperature: 0°C ~ 120°C Accuracy: ±1°C Local, ±3°C Remote Function: Temp Monitoring System (Sensor) Mounting Type: Surface Mount Output Type: SMBus Package / Case: 16-SSOP (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ADM1032ARMZ-1RL | onsemi |
Description: SENSOR DIGITAL 0C-100C MICRO8Sensing Temperature - Remote: 0°C ~ 120°C Sensing Temperature - Local: 0°C ~ 100°C Accuracy - Highest (Lowest): ±3°C Test Condition: 0°C ~ 100°C Supplier Device Package: 8-MSOP Resolution: 7 b Sensor Type: Digital, Local/Remote Voltage - Supply: 3V ~ 5.5V Operating Temperature: 0°C ~ 120°C Mounting Type: Surface Mount Output Type: SMBus Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Features: Output Switch, Programmable Limit, Standby Mode Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS16HT3G | onsemi |
Description: DIODE STANDARD 100V 200MA SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS19LT3G | onsemi |
Description: DIODE STANDARD 120V 200MA SOT23Current - Reverse Leakage @ Vr: 100 nA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 120 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOT-23-3 (TO-236) Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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BAS20LT3G | onsemi |
Description: DIODE STANDARD 200V 200MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
на замовлення 1330 шт: термін постачання 21-31 дні (днів) |
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BC847CWT3G | onsemi |
Description: TRANS NPN 45V 0.1A SC70-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 150 mW |
на замовлення 2905 шт: термін постачання 21-31 дні (днів) |
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BC857CLT3G | onsemi |
Description: TRANS PNP 45V 0.1A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW |
на замовлення 6093 шт: термін постачання 21-31 дні (днів) |
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| NVMFS5C638NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 26A/133A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 26A/133A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NVMFS6H800NT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Qualification: AEC-Q101
на замовлення 228000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 157.78 грн |
| AR0130CSSC00SPCA0-DPBR2 |
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Виробник: onsemi
Description: 1.2 MP 1/3 CIS
Qualification: AEC-Q100
Frames per Second: 60
Grade: Automotive
Supplier Device Package: 48-ILCC (10x10)
Active Pixel Array: 1280H x 960V
Pixel Size: 3.75µm x 3.75µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
Description: 1.2 MP 1/3 CIS
Qualification: AEC-Q100
Frames per Second: 60
Grade: Automotive
Supplier Device Package: 48-ILCC (10x10)
Active Pixel Array: 1280H x 960V
Pixel Size: 3.75µm x 3.75µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| AR0134CSSM00SPCA0-DPBR2 |
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Виробник: onsemi
Description: 1.2 MP 1/3 GS CIS
Frames per Second: 60.0
Part Status: Obsolete
Supplier Device Package: 48-ILCC (10x10)
Active Pixel Array: 1280H x 960V
Pixel Size: 3.75µm x 3.75µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
Description: 1.2 MP 1/3 GS CIS
Frames per Second: 60.0
Part Status: Obsolete
Supplier Device Package: 48-ILCC (10x10)
Active Pixel Array: 1280H x 960V
Pixel Size: 3.75µm x 3.75µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 70°C
Type: CMOS
Package / Case: 48-LCC
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| AR0144CSSM00SUKA0-CPBR2 |
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Виробник: onsemi
Description: 1MP 1/4 CIS SO
Active Pixel Array: 1280H x 800V
Pixel Size: 3µm x 3µm
Type: CMOS
Package / Case: 69-WFBGA, CSPBGA
Packaging: Tray
Frames per Second: 60
Supplier Device Package: 69-ODCSP (5.55x5.57)
Description: 1MP 1/4 CIS SO
Active Pixel Array: 1280H x 800V
Pixel Size: 3µm x 3µm
Type: CMOS
Package / Case: 69-WFBGA, CSPBGA
Packaging: Tray
Frames per Second: 60
Supplier Device Package: 69-ODCSP (5.55x5.57)
товару немає в наявності
В кошику
од. на суму грн.
| AR0230CSSC00SUEA0-DPBR2 |
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Виробник: onsemi
Description: 2 MP 1/3 CIS
Frames per Second: 60.0
Supplier Device Package: 80-IBGA (10x10)
Active Pixel Array: 1928H x 1088V
Pixel Size: 3µm x 3µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 85°C
Type: CMOS
Package / Case: 80-BGA
Packaging: Tray
Description: 2 MP 1/3 CIS
Frames per Second: 60.0
Supplier Device Package: 80-IBGA (10x10)
Active Pixel Array: 1928H x 1088V
Pixel Size: 3µm x 3µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 85°C
Type: CMOS
Package / Case: 80-BGA
Packaging: Tray
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 2348.66 грн |
| 10+ | 2101.70 грн |
| AR0238CSSC12SHRA0-DP2 |
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Виробник: onsemi
Description: 2MP 1/3 CIS SO
Frames per Second: 60
Supplier Device Package: 48-PLCC (11.43x11.43)
Active Pixel Array: 1928H x 1088V
Pixel Size: 3µm x 3µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 85°C (TJ)
Type: CMOS
Package / Case: 48-PLCC
Packaging: Tray
Description: 2MP 1/3 CIS SO
Frames per Second: 60
Supplier Device Package: 48-PLCC (11.43x11.43)
Active Pixel Array: 1928H x 1088V
Pixel Size: 3µm x 3µm
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Operating Temperature: -30°C ~ 85°C (TJ)
Type: CMOS
Package / Case: 48-PLCC
Packaging: Tray
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 2018.16 грн |
| 10+ | 1619.51 грн |
| AR1335CSSC11SMKA0-CP2 |
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Виробник: onsemi
Description: 13MP 1/3 CIS SO
Frames per Second: 30.0
Supplier Device Package: 63-ODCSP (6.29x5.69)
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Type: CMOS
Package / Case: 63-WFBGA, CSPBGA
Packaging: Tray
Description: 13MP 1/3 CIS SO
Frames per Second: 30.0
Supplier Device Package: 63-ODCSP (6.29x5.69)
Active Pixel Array: 4208H x 3120V
Pixel Size: 1.1µm x 1.1µm
Type: CMOS
Package / Case: 63-WFBGA, CSPBGA
Packaging: Tray
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 1333.34 грн |
| ASX340AT2C00XPED0-DPBR2 |
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Виробник: onsemi
Description: VGA 1/4 SOC
Frames per Second: 60.0
Supplier Device Package: 63-IBGA (7.5x7.5)
Active Pixel Array: 728H x 560V
Voltage - Supply: 1.7V ~ 1.95V, 2.66V ~ 2.94V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Package / Case: 63-LFBGA
Packaging: Tray
Description: VGA 1/4 SOC
Frames per Second: 60.0
Supplier Device Package: 63-IBGA (7.5x7.5)
Active Pixel Array: 728H x 560V
Voltage - Supply: 1.7V ~ 1.95V, 2.66V ~ 2.94V
Operating Temperature: -40°C ~ 105°C
Type: CMOS
Package / Case: 63-LFBGA
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| MT9V024IA7XTM-DP2 |
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Виробник: onsemi
Description: VGA 1/3 GS CIS
Description: VGA 1/3 GS CIS
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| FDB9506L-F085 |
Виробник: onsemi
Description: MOSFET N-CH 30V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 24.5A (Ta), 110A (Tc)
Part Status: Obsolete
Description: MOSFET N-CH 30V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 24.5A (Ta), 110A (Tc)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| AR0237ATSC12XUEA0-DPBR |
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Виробник: onsemi
Description: IMAGE SENSOR RGB 80-IBGA
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Grade: Automotive
Part Status: Active
Frames per Second: 60.0
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB 80-IBGA
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Grade: Automotive
Part Status: Active
Frames per Second: 60.0
Qualification: AEC-Q100
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1518.46 грн |
| 5+ | 1305.84 грн |
| 10+ | 1249.95 грн |
| 25+ | 1112.01 грн |
| 40+ | 1083.96 грн |
| 80+ | 1046.23 грн |
| 440+ | 953.29 грн |
| AR0237ATSC12XUEA0-DRBR |
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Виробник: onsemi
Description: IMAGE SENSOR RGB 80-IBGA
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Grade: Automotive
Part Status: Active
Frames per Second: 60.0
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB 80-IBGA
Packaging: Tray
Package / Case: 80-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1928H x 1088V
Supplier Device Package: 80-IBGA (10x10)
Grade: Automotive
Part Status: Active
Frames per Second: 60.0
Qualification: AEC-Q100
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1474.05 грн |
| 5+ | 1267.21 грн |
| 10+ | 1212.76 грн |
| 25+ | 1078.67 грн |
| 40+ | 1051.36 грн |
| 80+ | 1014.60 грн |
| 440+ | 924.13 грн |
| FDG6304P-F169 |
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Виробник: onsemi
Description: INTEGRATED CIRCUIT
Description: INTEGRATED CIRCUIT
товару немає в наявності
В кошику
од. на суму грн.
| FDG6304P-X |
Виробник: onsemi
Description: INTEGRATED CIRCUIT
Description: INTEGRATED CIRCUIT
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В кошику
од. на суму грн.
| FGD3N60LSDTM-T |
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Виробник: onsemi
Description: IGBT 600V 6A TO-252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 234 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 40ns/600ns
Switching Energy: 250µJ (on), 1mJ (off)
Test Condition: 480V, 3A, 470Ohm, 10V
Gate Charge: 12.5 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 40 W
Description: IGBT 600V 6A TO-252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 234 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 40ns/600ns
Switching Energy: 250µJ (on), 1mJ (off)
Test Condition: 480V, 3A, 470Ohm, 10V
Gate Charge: 12.5 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 40 W
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В кошику
од. на суму грн.
| MT9D115D00STCK25AC1-200 |
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Виробник: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 1.75µm x 1.75µm
Active Pixel Array: 1600H x 1200V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 1.75µm x 1.75µm
Active Pixel Array: 1600H x 1200V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
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од. на суму грн.
| MT9P111D00STCK28AC1-200 |
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Виробник: onsemi
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
Description: INTEGRATED CIRCUIT
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.95V, 2.5V ~ 3.1V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: Die
Part Status: Obsolete
Frames per Second: 30
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В кошику
од. на суму грн.
| NIS5132MN1TXG-L701 |
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Виробник: onsemi
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Bulk
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Bulk
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 9V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 150°C
Supplier Device Package: 10-DFN (3x3)
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В кошику
од. на суму грн.
| ESD5111PFCT5G |
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Виробник: onsemi
Description: TVS DIODE 3.3VWM 6.5VC 2WLCSP
Description: TVS DIODE 3.3VWM 6.5VC 2WLCSP
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В кошику
од. на суму грн.
| FAN53526UC89X |
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Виробник: onsemi
Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Cut Tape (CT)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 1.15V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.15V
Part Status: Active
Description: IC REG BUCK PROG 3A 15WLCSP
Packaging: Cut Tape (CT)
Package / Case: 15-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.4MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 15-WLCSP (2.02x1.31)
Synchronous Rectifier: Yes
Voltage - Output (Max): 1.15V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.15V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.87 грн |
| 10+ | 75.75 грн |
| 25+ | 63.47 грн |
| 100+ | 46.59 грн |
| 250+ | 40.22 грн |
| 500+ | 36.29 грн |
| 1000+ | 32.46 грн |
| NCP339BFCT2G |
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Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.0x1.5)
Fault Protection: Reverse Current
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WLCSP (1.0x1.5)
Fault Protection: Reverse Current
на замовлення 6664 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.47 грн |
| 13+ | 24.82 грн |
| 25+ | 22.17 грн |
| 100+ | 18.10 грн |
| 250+ | 16.81 грн |
| 500+ | 16.03 грн |
| 1000+ | 15.13 грн |
| 15GN03CA-TB-E |
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Виробник: onsemi
Description: RF TRANS NPN 10V 1.5GHZ 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-CP
Part Status: Active
Description: RF TRANS NPN 10V 1.5GHZ 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-CP
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 28.55 грн |
| 18+ | 17.03 грн |
| 100+ | 10.68 грн |
| 500+ | 7.46 грн |
| 1000+ | 6.63 грн |
| 15GN03MA-TL-E |
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Виробник: onsemi
Description: RF TRANS NPN 10V 1.5GHZ 3-MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 400mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-MCP
Part Status: Active
Description: RF TRANS NPN 10V 1.5GHZ 3-MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB @ 0.4GHz
Power - Max: 400mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
Supplier Device Package: 3-MCP
Part Status: Active
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В кошику
од. на суму грн.
| 1N4006FFG |
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Виробник: onsemi
Description: DIODE STANDARD 800V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE STANDARD 800V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 1684 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.27 грн |
| 14+ | 22.37 грн |
| 100+ | 14.18 грн |
| 500+ | 9.99 грн |
| 1000+ | 8.92 грн |
| 1N4007FFG |
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Виробник: onsemi
Description: DIODE STANDARD 1000V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 2184 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.86 грн |
| 33+ | 9.47 грн |
| 50+ | 6.75 грн |
| 100+ | 5.50 грн |
| 500+ | 4.01 грн |
| 1N5384BRLG |
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Виробник: onsemi
Description: DIODE ZENER 160V 5W AXIAL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
Description: DIODE ZENER 160V 5W AXIAL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: Axial
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 122 V
на замовлення 1496 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 11.10 грн |
| 1N5946BRLG |
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Виробник: onsemi
Description: DIODE ZENER 75V 3W AXIAL
Description: DIODE ZENER 75V 3W AXIAL
на замовлення 1659 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.23 грн |
| 13+ | 24.36 грн |
| 100+ | 15.51 грн |
| 500+ | 10.96 грн |
| 1000+ | 9.80 грн |
| 1PMT5935BT1G |
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Виробник: onsemi
Description: DIODE ZENER 27V 3.2W POWERMITE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: Powermite
Power - Max: 3.2 W
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V
Description: DIODE ZENER 27V 3.2W POWERMITE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: Powermite
Power - Max: 3.2 W
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20.6 V
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.65 грн |
| 10+ | 33.90 грн |
| 100+ | 25.86 грн |
| 500+ | 20.28 грн |
| 1000+ | 18.77 грн |
| 1SV263-TL-E |
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Виробник: onsemi
Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
товару немає в наявності
В кошику
од. на суму грн.
| 1SV264-TL-E |
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Виробник: onsemi
Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
Description: RF DIODE PIN 50V 100MW 3MCP
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 50V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-MCP
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
на замовлення 4506 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.82 грн |
| 23+ | 13.36 грн |
| 26+ | 11.82 грн |
| 100+ | 9.54 грн |
| 250+ | 8.79 грн |
| 500+ | 8.34 грн |
| 1000+ | 7.83 грн |
| 1SV267-TB-E |
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Виробник: onsemi
Description: RF DIODE PIN 50V 150MW 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Max: 50 mA
Power Dissipation (Max): 150 mW
Description: RF DIODE PIN 50V 150MW 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 50V, 1MHz
Resistance @ If, F: 2.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Max: 50 mA
Power Dissipation (Max): 150 mW
на замовлення 5721 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.40 грн |
| 12+ | 26.42 грн |
| 100+ | 16.90 грн |
| 500+ | 11.98 грн |
| 1000+ | 10.73 грн |
| 2SA1593T-TL-E |
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Виробник: onsemi
Description: TRANS PNP 100V 2A TP-FA
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TP-FA
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: TRANS PNP 100V 2A TP-FA
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TP-FA
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.71 грн |
| 10+ | 45.51 грн |
| 2SA2012-TD-E |
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Виробник: onsemi
Description: TRANS PNP 30V 5A PCP
Power - Max: 3.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: PCP
Frequency - Transition: 420MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 30mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS PNP 30V 5A PCP
Power - Max: 3.5 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: PCP
Frequency - Transition: 420MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 30mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2SB1121S-TD-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 25V 2A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS PNP 25V 2A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 830 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.78 грн |
| 10+ | 38.25 грн |
| 100+ | 26.58 грн |
| 500+ | 19.48 грн |
| 2SB1205S-TL-E |
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Виробник: onsemi
Description: TRANS PNP 20V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Description: TRANS PNP 20V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
на замовлення 649 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.57 грн |
| 10+ | 56.73 грн |
| 100+ | 37.46 грн |
| 2SB1302T-TD-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 20V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.3 W
Description: TRANS PNP 20V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.3 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SB815-7-TB-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 15V 0.7A 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Description: TRANS PNP 15V 0.7A 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Frequency - Transition: 250MHz
Supplier Device Package: 3-CP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
на замовлення 2920 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.27 грн |
| 14+ | 22.22 грн |
| 100+ | 14.12 грн |
| 500+ | 9.95 грн |
| 1000+ | 8.89 грн |
| 2SC4134S-TL-E |
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Виробник: onsemi
Description: TRANS NPN 100V 1A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
Description: TRANS NPN 100V 1A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
на замовлення 411 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.95 грн |
| 10+ | 44.06 грн |
| 100+ | 28.87 грн |
| 2SC4135S-TL-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 100V 2A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS NPN 100V 2A TPFA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 262 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 56.89 грн |
| 100+ | 39.40 грн |
| 2SC5964-TD-H |
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Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
Description: TRANS NPN 50V 3A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
на замовлення 13473 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.06 грн |
| 10+ | 36.96 грн |
| 100+ | 23.93 грн |
| 500+ | 17.22 грн |
| 2SD1628G-TD-H |
Виробник: onsemi
Description: TRANS NPN 20V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
Description: TRANS NPN 20V 5A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2SD1803T-TL-H |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 572 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.04 грн |
| 10+ | 79.49 грн |
| 100+ | 53.32 грн |
| 2SD1816S-TL-E |
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Виробник: onsemi
Description: TRANS NPN 100V 4A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS NPN 100V 4A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 1580 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.63 грн |
| 10+ | 81.09 грн |
| 100+ | 54.69 грн |
| 2SD1816S-TL-H |
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Виробник: onsemi
Description: TRANS NPN 100V 4A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS NPN 100V 4A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| 74FST3257MNTWG |
![]() |
Виробник: onsemi
Description: IC MUX/DEMUX 4 X 2:1 16-QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-QFN (2.5x3.5)
Part Status: Active
Description: IC MUX/DEMUX 4 X 2:1 16-QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-QFN (2.5x3.5)
Part Status: Active
на замовлення 4013 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.47 грн |
| 13+ | 24.82 грн |
| 25+ | 22.20 грн |
| 100+ | 18.13 грн |
| 250+ | 16.83 грн |
| 500+ | 16.06 грн |
| 1000+ | 15.16 грн |
| 74LVC540ADTR2G |
Виробник: onsemi
Description: IC BUFFER INVERT 3.6V 20TSSOP
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC BUFFER INVERT 3.6V 20TSSOP
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 7WBD3306USG |
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Виробник: onsemi
Description: IC BUS SWITCH 1 X 1:1 US8
Supplier Device Package: US8
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Description: IC BUS SWITCH 1 X 1:1 US8
Supplier Device Package: US8
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
на замовлення 3072 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.82 грн |
| 11+ | 29.63 грн |
| 25+ | 26.54 грн |
| 100+ | 21.74 грн |
| 250+ | 20.24 грн |
| 500+ | 19.33 грн |
| 1000+ | 18.27 грн |
| ADM1023ARQZ-REEL |
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Виробник: onsemi
Description: IC SENSOR TEMP DUAL PREC 16QSOP
Part Status: Active
Supplier Device Package: 16-QSOP
Output Fan: No
Output Alarm: Yes
Topology: ADC, Comparator, Multiplexer, Register Bank
Sensing Temperature: 0°C ~ 120°C, External Sensor
Sensor Type: Internal and External
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: 0°C ~ 120°C
Accuracy: ±1°C Local, ±3°C Remote
Function: Temp Monitoring System (Sensor)
Mounting Type: Surface Mount
Output Type: SMBus
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC SENSOR TEMP DUAL PREC 16QSOP
Part Status: Active
Supplier Device Package: 16-QSOP
Output Fan: No
Output Alarm: Yes
Topology: ADC, Comparator, Multiplexer, Register Bank
Sensing Temperature: 0°C ~ 120°C, External Sensor
Sensor Type: Internal and External
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: 0°C ~ 120°C
Accuracy: ±1°C Local, ±3°C Remote
Function: Temp Monitoring System (Sensor)
Mounting Type: Surface Mount
Output Type: SMBus
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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| ADM1032ARMZ-1RL |
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Виробник: onsemi
Description: SENSOR DIGITAL 0C-100C MICRO8
Sensing Temperature - Remote: 0°C ~ 120°C
Sensing Temperature - Local: 0°C ~ 100°C
Accuracy - Highest (Lowest): ±3°C
Test Condition: 0°C ~ 100°C
Supplier Device Package: 8-MSOP
Resolution: 7 b
Sensor Type: Digital, Local/Remote
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: 0°C ~ 120°C
Mounting Type: Surface Mount
Output Type: SMBus
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Output Switch, Programmable Limit, Standby Mode
Packaging: Cut Tape (CT)
Description: SENSOR DIGITAL 0C-100C MICRO8
Sensing Temperature - Remote: 0°C ~ 120°C
Sensing Temperature - Local: 0°C ~ 100°C
Accuracy - Highest (Lowest): ±3°C
Test Condition: 0°C ~ 100°C
Supplier Device Package: 8-MSOP
Resolution: 7 b
Sensor Type: Digital, Local/Remote
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: 0°C ~ 120°C
Mounting Type: Surface Mount
Output Type: SMBus
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Features: Output Switch, Programmable Limit, Standby Mode
Packaging: Cut Tape (CT)
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| BAS16HT3G |
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Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 100V 200MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
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| BAS19LT3G |
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Виробник: onsemi
Description: DIODE STANDARD 120V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 120V 200MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.72 грн |
| 57+ | 5.42 грн |
| 100+ | 3.34 грн |
| 500+ | 2.26 грн |
| 1000+ | 1.98 грн |
| 2000+ | 1.74 грн |
| 5000+ | 1.45 грн |
| BAS20LT3G |
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Виробник: onsemi
Description: DIODE STANDARD 200V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Description: DIODE STANDARD 200V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
на замовлення 1330 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.72 грн |
| 57+ | 5.42 грн |
| 80+ | 3.86 грн |
| 100+ | 3.12 грн |
| 500+ | 2.26 грн |
| BC847CWT3G |
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Виробник: onsemi
Description: TRANS NPN 45V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Description: TRANS NPN 45V 0.1A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
на замовлення 2905 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 31+ | 10.31 грн |
| 50+ | 6.11 грн |
| 100+ | 3.79 грн |
| 500+ | 2.57 грн |
| 1000+ | 2.25 грн |
| 2000+ | 1.98 грн |
| BC857CLT3G |
![]() |
Виробник: onsemi
Description: TRANS PNP 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Description: TRANS PNP 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
на замовлення 6093 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.72 грн |
| 58+ | 5.34 грн |
| 100+ | 3.30 грн |
| 500+ | 2.23 грн |
| 1000+ | 1.95 грн |
| 2000+ | 1.71 грн |
| 5000+ | 1.43 грн |





















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