| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LA1828-S-E-ON | onsemi |
Description: SINGLE-CHIP TUNER IC FOR PORTABL Packaging: Bulk |
на замовлення 13281 шт: термін постачання 21-31 дні (днів) |
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| LA1867NM-MPB-E | onsemi |
Description: ANALOG CAR RADIO TUNER Packaging: Bulk Part Status: Active |
на замовлення 4750 шт: термін постачання 21-31 дні (днів) |
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| LA1827M-MPB-E | onsemi | Description: HOME TUNER IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BC848CLT3G | onsemi |
 Description: TRANS NPN 30V 0.1A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 225 mW |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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NVMFS5834NLT1G | onsemi |
Description: MOSFET N-CH 40V 14A/75A 5DFN |
товару немає в наявності |
Мінімальне замовлення: 913 шт В кошику од. на суму грн. | ||||||||||||||
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NVMFS5834NLWFT3G | onsemi |
Description: MOSFET N-CH 40V 14A/75A 5DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFS5834NLWFT3G | onsemi |
Description: MOSFET N-CH 40V 14A/75A 5DFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFS5834NLWFT1G | onsemi |
Description: MOSFET N-CH 40V 75A SO8FL |
товару немає в наявності |
Мінімальне замовлення: 802 шт В кошику од. на суму грн. | ||||||||||||||
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NSV40301CTWG | onsemi |
Description: TRANS NPN 40V 3A LFPAK4 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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MC100EP451FAR2G | onsemi |
Description: IC FF D-TYPE SGL 6-BIT 32-LQFP Packaging: Tape & Reel (TR) Number of Bits per Element: 6 Part Status: Active Supplier Device Package: 32-LQFP (7x7) Clock Frequency: 3 GHz Trigger Type: Positive Edge Current - Quiescent (Iq): 135 mA Voltage - Supply: -3V ~ -5.5V Operating Temperature: -40°C ~ 85°C (TA) Type: D-Type Function: Master Reset Number of Elements: 1 Mounting Type: Surface Mount Output Type: Complementary Package / Case: 32-LQFP |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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NTST40120CTH | onsemi |
Description: DIODE ARR SCHOTT 120V 20A TO220 Current - Reverse Leakage @ Vr: 500 µA @ 120 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 120 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: TO-220 Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
на замовлення 174300 шт: термін постачання 21-31 дні (днів) |
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MARS1-TI954-GEVB | onsemi | Description: OPTICAL SENSOR DEVELOPMENT TOOLS |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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6N139TVM | onsemi |
Description: OPTOISO 5KV DARL W/BASE 8-MDIP Mounting Type: Through Hole Output Type: Darlington with Base Package / Case: 8-DIP (0.400", 10.16mm) Packaging: Tube Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Part Status: Active Turn On / Turn Off Time (Typ): 240ns, 1.3µs Voltage - Output (Max): 18V Supplier Device Package: 8-MDIP Current Transfer Ratio (Min): 500% @ 1.6mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 60mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.3V Operating Temperature: -40°C ~ 100°C |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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SMBT1282LT1 | onsemi |
Description: SS SOT23 GP XSTR SPCL TR Packaging: Bulk |
на замовлення 249000 шт: термін постачання 21-31 дні (днів) |
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CM1214A-01SO | onsemi |
Description: TVS DIODE 7VWM 11.3VC SOT233 Part Status: Obsolete Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 11.3V (Typ) Bidirectional Channels: 1 Supplier Device Package: SOT-23-3 (TO-236) Voltage - Reverse Standoff (Typ): 7V Current - Peak Pulse (10/1000µs): 1A (8/20µs) Applications: Ethernet, RF Antenna Operating Temperature: -40°C ~ 85°C (TA) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
на замовлення 81242 шт: термін постачання 21-31 дні (днів) |
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| CAT25M01XE-T2 | onsemi |
Description: CAT25M01 - SERIAL EEPROM, 128KX8 DigiKey Programmable: Not Verified Packaging: Bulk |
на замовлення 11076 шт: термін постачання 21-31 дні (днів) |
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CAT25M01LI-G | onsemi |
Description: IC EEPROM 1MBIT SPI 10MHZ 8DIP DigiKey Programmable: Not Verified Memory Organization: 128K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-PDIP Memory Format: EEPROM Clock Frequency: 10 MHz Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Mbit Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Bulk |
на замовлення 2463 шт: термін постачання 21-31 дні (днів) |
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NTMFS022N15MC | onsemi |
Description: POWER MOSFET, 150V SINGLE N CHAN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 2.5W (Ta), 80.6W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 41.9A (Tc) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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NTMFS022N15MC | onsemi |
Description: POWER MOSFET, 150V SINGLE N CHAN Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 2.5W (Ta), 80.6W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 41.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 18229 шт: термін постачання 21-31 дні (днів) |
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NTTFS022N15MC | onsemi |
Description: POWER MOSFET, N CHANNEL, 150V, 3 Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: 8-PQFN (3.3x3.3) Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTTFS022N15MC | onsemi |
Description: POWER MOSFET, N CHANNEL, 150V, 3 Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: 8-PQFN (3.3x3.3) Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 6979 шт: термін постачання 21-31 дні (днів) |
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NJVMJD148T4G | onsemi |
Description: TRANS NPN 45V 4A DPAK Qualification: AEC-Q101 Power - Max: 1.75 W Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 4 A Grade: Automotive Supplier Device Package: DPAK Frequency - Transition: 3MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Current - Collector Cutoff (Max): 20µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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4N32VM | onsemi |
Description: OPTOISO 4.17KV DARL W/BASE 6-DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Darlington with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 500% @ 10mA Vce Saturation (Max): 1V Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 5µs, 100µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
на замовлення 687 шт: термін постачання 21-31 дні (днів) |
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AFGHL25T120RL | onsemi |
Description: IGBT TRENCH FS 1250V 48A TO-247 Qualification: AEC-Q101 Grade: Automotive Part Status: Obsolete Gate Charge: 277 nC Test Condition: 600V, 25A, 5Ohm, 15V Switching Energy: 1.94mJ (on), 730µJ (off) Td (on/off) @ 25°C: 27.2ns/116ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Reverse Recovery Time (trr): 159 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 400 W Current - Collector Pulsed (Icm): 100 A Voltage - Collector Emitter Breakdown (Max): 1250 V Current - Collector (Ic) (Max): 48 A |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||
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AFGHL25T120RH | onsemi |
Description: IGBT TRENCH FS 1200V 48A TO-247 Part Status: Obsolete Gate Charge: 189 nC Test Condition: 600V, 25A, 5Ohm, 15V Switching Energy: 1.94mJ (on), 770µJ (off) Td (on/off) @ 25°C: 27ns/118ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Reverse Recovery Time (trr): 159 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Qualification: AEC-Q101 Grade: Automotive Power - Max: 261 W Current - Collector Pulsed (Icm): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 48 A |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||
| NXH25T120L2Q1PG | onsemi |
Description: IGBT MOD 1200V 25A 81W 44-PIM Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: 44-PIM (71x37.4) Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 81 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 8.502 nF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NXH25T120L2Q1PTG | onsemi |
Description: IGBT MOD 1200V 25A 81W 44-PIM Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: 44-PIM (71x37.4) Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 81 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 8.502 nF @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 21 шт В кошику од. на суму грн. | |||||||||||||||
| LC749492PT-UCE-H | onsemi |
Description: LCD PICTURE IMPROVEMENT Packaging: Bulk Part Status: Active |
на замовлення 296100 шт: термін постачання 21-31 дні (днів) |
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FSA1258AL8X | onsemi |
Description: LOW RON LOW VOLTAGE DUAL-SPST AN Number of Circuits: 2 Current - Leakage (IS(off)) (Max): 2nA (Typ) Channel Capacitance (CS(off), CD(off)): 11.5pF Switch Time (Ton, Toff) (Max): 35ns, 15ns Switch Circuit: SPST - NO/NC Crosstalk: -100dB @ 1MHz Charge Injection: 20pC Voltage - Supply, Single (V+): 2.7V ~ 5.5V Supplier Device Package: 8-MicroPak™ -3db Bandwidth: 300MHz On-State Resistance (Max): 1.15Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFQFN Packaging: Bulk |
на замовлення 38841 шт: термін постачання 21-31 дні (днів) |
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KA7905TU | onsemi |
Description: IC REG LINEAR -5V 1A TO220-3 Protection Features: Over Temperature, Short Circuit Voltage Dropout (Max): 2V @ 1A (Typ) PSRR: 60dB (120Hz) Part Status: Obsolete Voltage - Output (Min/Fixed): -5V Supplier Device Package: TO-220-3 Number of Regulators: 1 Voltage - Input (Max): -35V Current - Quiescent (Iq): 6 mA Output Configuration: Negative Operating Temperature: 0°C ~ 125°C Current - Output: 1A Mounting Type: Through Hole Output Type: Fixed Package / Case: TO-220-3 Packaging: Tube |
на замовлення 70932 шт: термін постачання 21-31 дні (днів) |
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NCP7905ACTG | onsemi | Description: IC REG LINEAR 5V 1A TO220AB |
на замовлення 7900 шт: термін постачання 21-31 дні (днів) |
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FDS4435A | onsemi |
Description: MOSFET P-CH 30V 9A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDS4435A | onsemi |
Description: MOSFET P-CH 30V 9A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP1256BSN100T1G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 6TSOP Part Status: Obsolete Voltage - Start Up: 18 V Fault Protection: Over Power, Over Voltage, Short Circuit Supplier Device Package: 6-TSOP Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 100kHz Duty Cycle: 80% Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Bulk |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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| DTC114YRLRM | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Part Status: Active Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||
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MMSZ5260ET1 | onsemi |
Description: DIODE ZENER 43V 500MW SOD123 Current - Reverse Leakage @ Vr: 100 nA @ 33 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 93 Ohms Voltage - Zener (Nom) (Vz): 43 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±5% Packaging: Bulk |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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NRVBSS25FA | onsemi |
Description: DIODE SCHOTTKY 50V 2A SOD123FA Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 400 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123FA Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 93pF @ 4V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 9 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NDS8926 | onsemi |
Description: MOSFET 2N-CH 20V 5.5A 8SOIC FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5.5A Drain to Source Voltage (Vdss): 20V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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15GN03FA-TL-H | onsemi |
Description: TRANS NPN VHF-UHF 70A 10V SSFP Supplier Device Package: 3-SSFP Mounting Type: Surface Mount Package / Case: SC-81 Packaging: Bulk |
на замовлення 91000 шт: термін постачання 21-31 дні (днів) |
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NCP252160MNTWG | onsemi |
Description: IC HALF BRIDGE DRIVER 60A 31PQFN Part Status: Active Load Type: Inductive, Capacitive, Resistive Supplier Device Package: 31-PQFN (5x5) Voltage - Load: 4.5V ~ 16V Technology: N-Channel MOSFET Current - Output / Channel: 60A Applications: DC-DC Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TA) Interface: PWM Mounting Type: Surface Mount Package / Case: 31-PowerWFQFN Features: Bootstrap Circuit Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NCP252160MNTWG | onsemi |
Description: IC HALF BRIDGE DRIVER 60A 31PQFN Applications: DC-DC Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TA) Interface: PWM Mounting Type: Surface Mount Package / Case: 31-PowerWFQFN Features: Bootstrap Circuit Packaging: Cut Tape (CT) Part Status: Active Load Type: Inductive, Capacitive, Resistive Supplier Device Package: 31-PQFN (5x5) Voltage - Load: 4.5V ~ 16V Technology: N-Channel MOSFET Current - Output / Channel: 60A |
на замовлення 2641 шт: термін постачання 21-31 дні (днів) |
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LV58063MCZ-AH | onsemi |
Description: IC REG BUCK ADJ 3A 8SOIC/SOP8L Voltage - Output (Min/Fixed): 0.8V Voltage - Input (Min): 8V Voltage - Output (Max): 28V Synchronous Rectifier: No Supplier Device Package: 8-SOIC-EP/SOP8L Topology: Buck Voltage - Input (Max): 28V Frequency - Switching: 370kHz Output Configuration: Positive Operating Temperature: -20°C ~ 80°C Current - Output: 3A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tube |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C426NLT1G | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40 Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C426NLT1G | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40 Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| 2SC4363-AC | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Supplier Device Package: 3-SPA Transistor Type: NPN - Pre-Biased Mounting Type: Through Hole Package / Case: 3-SSIP Part Status: Active Packaging: Bulk |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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STR-RSL10-MESH-KIT-GEVK | onsemi |
Description: RSL10 BLE MESH KIT Frequency: 2.4GHz For Use With/Related Products: RSL10 Packaging: Bulk Supplied Contents: Board(s) Type: Transceiver; Bluetooth® 5 |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| CAT28LV65-25 | onsemi |
Description: IC EEPROM 64KBIT Memory Organization: 8K x 8 Access Time: 250 ns Write Cycle Time - Word, Page: 5ms Part Status: Obsolete Memory Format: EEPROM Technology: EEPROM Voltage - Supply: 3V ~ 3.6V Memory Size: 64Kbit Packaging: Bulk Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Non-Volatile DigiKey Programmable: Not Verified |
на замовлення 2433 шт: термін постачання 21-31 дні (днів) |
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NUF6107MNTBG | onsemi |
Description: FILTER RC(PI) 100 OHMS ESD SMD Packaging: Bulk Package / Case: 12-VFDFN Exposed Pad Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 30pF Height: 0.039" (1.00mm) Attenuation Value: -35dB @ 800MHz ~ 2.2GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Resistance - Channel (Ohms): 100 ESD Protection: Yes Number of Channels: 4 |
на замовлення 183000 шт: термін постачання 21-31 дні (днів) |
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FGHL75T65LQDT | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 152 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 48ns/568ns Switching Energy: 1.88mJ (on), 2.38mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 793 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 469 W |
на замовлення 213 шт: термін постачання 21-31 дні (днів) |
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FGHL75T65MQDT | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 107 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/118ns Switching Energy: 2.35mJ (on), 1.25mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 149 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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FGHL75T65MQDTL4 | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 107 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A Supplier Device Package: TO-247-4L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 32ns/181ns Switching Energy: 1.2mJ (on), 1.1mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 149 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W |
на замовлення 327 шт: термін постачання 21-31 дні (днів) |
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FGHL75T65LQDTL4 | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 87 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A Supplier Device Package: TO-247-4L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/548ns Switching Energy: 1.01mJ (on), 2.53mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 779 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 469 W |
на замовлення 277 шт: термін постачання 21-31 дні (днів) |
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NVD5862NT4G-VF01 | onsemi |
Description: NFET DPAK 60V 98A 5.7MOHM Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4.1W Rds On (Max) @ Id, Vgs: 5.7mOhm @ 48A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 98A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMJS0D8N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 56A/368A 8LFPAK |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NTMJS0D8N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 56A/368A 8LFPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SMBT1230LT1G | onsemi |
Description: SS SOT23 GP XSTR SPCL TR Part Status: Active Packaging: Bulk |
на замовлення 13603 шт: термін постачання 21-31 дні (днів) |
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3EZ13D5 | onsemi |
Description: DIODE ZENER 13V 3W DO41 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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MC1066DBR2 | onsemi |
Description: SERIAL SWITCH/DIGITAL SENSOR Packaging: Bulk |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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1N6292AG | onsemi |
Description: TVS DIODE 64.1VWM 103VC AXIAL Unidirectional Channels: 1 Supplier Device Package: Axial Voltage - Reverse Standoff (Typ): 64.1V Applications: General Purpose Operating Temperature: -65°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Bulk Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 103V Voltage - Breakdown (Min): 71.3V |
на замовлення 4118 шт: термін постачання 21-31 дні (днів) |
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1N6292ARL4G | onsemi |
Description: TVS DIODE 64.1VWM 103VC AXIAL Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 103V Voltage - Breakdown (Min): 71.3V Unidirectional Channels: 1 Supplier Device Package: Axial Voltage - Reverse Standoff (Typ): 64.1V Applications: General Purpose Operating Temperature: -65°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Bulk |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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| LA1828-S-E-ON |
на замовлення 13281 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 567+ | 38.90 грн |
| LA1867NM-MPB-E |
на замовлення 4750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 159+ | 123.64 грн |
| LA1827M-MPB-E |
Виробник: onsemi
Description: HOME TUNER IC
Description: HOME TUNER IC
товару немає в наявності
В кошику
од. на суму грн.
| BC848CLT3G |
|
Виробник: onsemi
Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 1.18 грн |
| NVMFS5834NLT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 14A/75A 5DFN
Description: MOSFET N-CH 40V 14A/75A 5DFN
товару немає в наявності
Мінімальне замовлення: 913 шт
В кошику
од. на суму грн.
| NVMFS5834NLWFT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 14A/75A 5DFN
Description: MOSFET N-CH 40V 14A/75A 5DFN
товару немає в наявності
В кошику
од. на суму грн.
| NVMFS5834NLWFT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 14A/75A 5DFN
Description: MOSFET N-CH 40V 14A/75A 5DFN
товару немає в наявності
В кошику
од. на суму грн.
| NVMFS5834NLWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 75A SO8FL
Description: MOSFET N-CH 40V 75A SO8FL
товару немає в наявності
Мінімальне замовлення: 802 шт
В кошику
од. на суму грн.
| NSV40301CTWG |
|
Виробник: onsemi
Description: TRANS NPN 40V 3A LFPAK4
Description: TRANS NPN 40V 3A LFPAK4
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MC100EP451FAR2G |
|
Виробник: onsemi
Description: IC FF D-TYPE SGL 6-BIT 32-LQFP
Packaging: Tape & Reel (TR)
Number of Bits per Element: 6
Part Status: Active
Supplier Device Package: 32-LQFP (7x7)
Clock Frequency: 3 GHz
Trigger Type: Positive Edge
Current - Quiescent (Iq): 135 mA
Voltage - Supply: -3V ~ -5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 32-LQFP
Description: IC FF D-TYPE SGL 6-BIT 32-LQFP
Packaging: Tape & Reel (TR)
Number of Bits per Element: 6
Part Status: Active
Supplier Device Package: 32-LQFP (7x7)
Clock Frequency: 3 GHz
Trigger Type: Positive Edge
Current - Quiescent (Iq): 135 mA
Voltage - Supply: -3V ~ -5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Master Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 32-LQFP
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| NTST40120CTH |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 120V 20A TO220
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: DIODE ARR SCHOTT 120V 20A TO220
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
на замовлення 174300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 293+ | 72.46 грн |
| MARS1-TI954-GEVB |
Виробник: onsemi
Description: OPTICAL SENSOR DEVELOPMENT TOOLS
Description: OPTICAL SENSOR DEVELOPMENT TOOLS
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21540.13 грн |
| 6N139TVM |
|
Виробник: onsemi
Description: OPTOISO 5KV DARL W/BASE 8-MDIP
Mounting Type: Through Hole
Output Type: Darlington with Base
Package / Case: 8-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 240ns, 1.3µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-MDIP
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 100°C
Description: OPTOISO 5KV DARL W/BASE 8-MDIP
Mounting Type: Through Hole
Output Type: Darlington with Base
Package / Case: 8-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 240ns, 1.3µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-MDIP
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 100°C
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.08 грн |
| 10+ | 82.50 грн |
| 100+ | 62.62 грн |
| 500+ | 50.53 грн |
| 1000+ | 47.84 грн |
| SMBT1282LT1 |
на замовлення 249000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9458+ | 1.97 грн |
| CM1214A-01SO |
|
Виробник: onsemi
Description: TVS DIODE 7VWM 11.3VC SOT233
Part Status: Obsolete
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 11.3V (Typ)
Bidirectional Channels: 1
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Reverse Standoff (Typ): 7V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Applications: Ethernet, RF Antenna
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: TVS DIODE 7VWM 11.3VC SOT233
Part Status: Obsolete
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 11.3V (Typ)
Bidirectional Channels: 1
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Reverse Standoff (Typ): 7V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Applications: Ethernet, RF Antenna
Operating Temperature: -40°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
на замовлення 81242 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1128+ | 17.95 грн |
| CAT25M01XE-T2 |
Виробник: onsemi
Description: CAT25M01 - SERIAL EEPROM, 128KX8
DigiKey Programmable: Not Verified
Packaging: Bulk
Description: CAT25M01 - SERIAL EEPROM, 128KX8
DigiKey Programmable: Not Verified
Packaging: Bulk
на замовлення 11076 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 128+ | 181.66 грн |
| CAT25M01LI-G |
Виробник: onsemi
Description: IC EEPROM 1MBIT SPI 10MHZ 8DIP
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-PDIP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Description: IC EEPROM 1MBIT SPI 10MHZ 8DIP
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-PDIP
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
на замовлення 2463 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 107+ | 217.83 грн |
| NTMFS022N15MC |
|
Виробник: onsemi
Description: POWER MOSFET, 150V SINGLE N CHAN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 2.5W (Ta), 80.6W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 41.9A (Tc)
Description: POWER MOSFET, 150V SINGLE N CHAN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 2.5W (Ta), 80.6W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 41.9A (Tc)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 71.19 грн |
| NTMFS022N15MC |
|
Виробник: onsemi
Description: POWER MOSFET, 150V SINGLE N CHAN
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 2.5W (Ta), 80.6W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 41.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: POWER MOSFET, 150V SINGLE N CHAN
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 2.5W (Ta), 80.6W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 41.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 18229 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 182.43 грн |
| 10+ | 119.86 грн |
| 100+ | 86.39 грн |
| 500+ | 67.19 грн |
| 1000+ | 64.33 грн |
| NTTFS022N15MC |
|
Виробник: onsemi
Description: POWER MOSFET, N CHANNEL, 150V, 3
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: POWER MOSFET, N CHANNEL, 150V, 3
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 79.63 грн |
| NTTFS022N15MC |
|
Виробник: onsemi
Description: POWER MOSFET, N CHANNEL, 150V, 3
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: POWER MOSFET, N CHANNEL, 150V, 3
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 6979 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 239.39 грн |
| 10+ | 150.76 грн |
| 100+ | 105.22 грн |
| 500+ | 80.45 грн |
| 1000+ | 74.57 грн |
| NJVMJD148T4G |
|
Виробник: onsemi
Description: TRANS NPN 45V 4A DPAK
Qualification: AEC-Q101
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 4 A
Grade: Automotive
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Current - Collector Cutoff (Max): 20µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: TRANS NPN 45V 4A DPAK
Qualification: AEC-Q101
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 4 A
Grade: Automotive
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Current - Collector Cutoff (Max): 20µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 29.89 грн |
| 4N32VM |
|
Виробник: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 4.17KV DARL W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
на замовлення 687 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.65 грн |
| 50+ | 29.14 грн |
| 100+ | 26.71 грн |
| 500+ | 20.98 грн |
| AFGHL25T120RL |
Виробник: onsemi
Description: IGBT TRENCH FS 1250V 48A TO-247
Qualification: AEC-Q101
Grade: Automotive
Part Status: Obsolete
Gate Charge: 277 nC
Test Condition: 600V, 25A, 5Ohm, 15V
Switching Energy: 1.94mJ (on), 730µJ (off)
Td (on/off) @ 25°C: 27.2ns/116ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Reverse Recovery Time (trr): 159 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 400 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector (Ic) (Max): 48 A
Description: IGBT TRENCH FS 1250V 48A TO-247
Qualification: AEC-Q101
Grade: Automotive
Part Status: Obsolete
Gate Charge: 277 nC
Test Condition: 600V, 25A, 5Ohm, 15V
Switching Energy: 1.94mJ (on), 730µJ (off)
Td (on/off) @ 25°C: 27.2ns/116ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Reverse Recovery Time (trr): 159 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 400 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector (Ic) (Max): 48 A
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| AFGHL25T120RH |
Виробник: onsemi
Description: IGBT TRENCH FS 1200V 48A TO-247
Part Status: Obsolete
Gate Charge: 189 nC
Test Condition: 600V, 25A, 5Ohm, 15V
Switching Energy: 1.94mJ (on), 770µJ (off)
Td (on/off) @ 25°C: 27ns/118ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Reverse Recovery Time (trr): 159 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 261 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 48 A
Description: IGBT TRENCH FS 1200V 48A TO-247
Part Status: Obsolete
Gate Charge: 189 nC
Test Condition: 600V, 25A, 5Ohm, 15V
Switching Energy: 1.94mJ (on), 770µJ (off)
Td (on/off) @ 25°C: 27ns/118ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Reverse Recovery Time (trr): 159 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 261 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 48 A
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| NXH25T120L2Q1PG |
|
Виробник: onsemi
Description: IGBT MOD 1200V 25A 81W 44-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 44-PIM (71x37.4)
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.502 nF @ 20 V
Description: IGBT MOD 1200V 25A 81W 44-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 44-PIM (71x37.4)
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.502 nF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| NXH25T120L2Q1PTG |
|
Виробник: onsemi
Description: IGBT MOD 1200V 25A 81W 44-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 44-PIM (71x37.4)
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.502 nF @ 20 V
Description: IGBT MOD 1200V 25A 81W 44-PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 44-PIM (71x37.4)
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.502 nF @ 20 V
товару немає в наявності
Мінімальне замовлення: 21 шт
В кошику
од. на суму грн.
| LC749492PT-UCE-H |
на замовлення 296100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 83+ | 240.46 грн |
| FSA1258AL8X |
|
Виробник: onsemi
Description: LOW RON LOW VOLTAGE DUAL-SPST AN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 2nA (Typ)
Channel Capacitance (CS(off), CD(off)): 11.5pF
Switch Time (Ton, Toff) (Max): 35ns, 15ns
Switch Circuit: SPST - NO/NC
Crosstalk: -100dB @ 1MHz
Charge Injection: 20pC
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Supplier Device Package: 8-MicroPak™
-3db Bandwidth: 300MHz
On-State Resistance (Max): 1.15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFQFN
Packaging: Bulk
Description: LOW RON LOW VOLTAGE DUAL-SPST AN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 2nA (Typ)
Channel Capacitance (CS(off), CD(off)): 11.5pF
Switch Time (Ton, Toff) (Max): 35ns, 15ns
Switch Circuit: SPST - NO/NC
Crosstalk: -100dB @ 1MHz
Charge Injection: 20pC
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Supplier Device Package: 8-MicroPak™
-3db Bandwidth: 300MHz
On-State Resistance (Max): 1.15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFQFN
Packaging: Bulk
на замовлення 38841 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 586+ | 33.91 грн |
| KA7905TU |
|
Виробник: onsemi
Description: IC REG LINEAR -5V 1A TO220-3
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 2V @ 1A (Typ)
PSRR: 60dB (120Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): -5V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): -35V
Current - Quiescent (Iq): 6 mA
Output Configuration: Negative
Operating Temperature: 0°C ~ 125°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Tube
Description: IC REG LINEAR -5V 1A TO220-3
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 2V @ 1A (Typ)
PSRR: 60dB (120Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): -5V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): -35V
Current - Quiescent (Iq): 6 mA
Output Configuration: Negative
Operating Temperature: 0°C ~ 125°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Tube
на замовлення 70932 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 626+ | 31.67 грн |
| NCP7905ACTG |
Виробник: onsemi
Description: IC REG LINEAR 5V 1A TO220AB
Description: IC REG LINEAR 5V 1A TO220AB
на замовлення 7900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1110+ | 20.00 грн |
| FDS4435A |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
Description: MOSFET P-CH 30V 9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| FDS4435A |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
Description: MOSFET P-CH 30V 9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
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В кошику
од. на суму грн.
| NCP1256BSN100T1G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Part Status: Obsolete
Voltage - Start Up: 18 V
Fault Protection: Over Power, Over Voltage, Short Circuit
Supplier Device Package: 6-TSOP
Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 100kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Part Status: Obsolete
Voltage - Start Up: 18 V
Fault Protection: Over Power, Over Voltage, Short Circuit
Supplier Device Package: 6-TSOP
Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 100kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1237+ | 17.23 грн |
| MMSZ5260ET1 |
Виробник: onsemi
Description: DIODE ZENER 43V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 93 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 43V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 93 Ohms
Voltage - Zener (Nom) (Vz): 43 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Bulk
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6662+ | 3.59 грн |
| NRVBSS25FA |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 50V 2A SOD123FA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 400 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123FA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 9 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 50V 2A SOD123FA
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 400 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123FA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 9 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NDS8926 |
|
Виробник: onsemi
Description: MOSFET 2N-CH 20V 5.5A 8SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Description: MOSFET 2N-CH 20V 5.5A 8SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 15GN03FA-TL-H |
|
Виробник: onsemi
Description: TRANS NPN VHF-UHF 70A 10V SSFP
Supplier Device Package: 3-SSFP
Mounting Type: Surface Mount
Package / Case: SC-81
Packaging: Bulk
Description: TRANS NPN VHF-UHF 70A 10V SSFP
Supplier Device Package: 3-SSFP
Mounting Type: Surface Mount
Package / Case: SC-81
Packaging: Bulk
на замовлення 91000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2826+ | 7.87 грн |
| NCP252160MNTWG |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 4.5V ~ 16V
Technology: N-Channel MOSFET
Current - Output / Channel: 60A
Applications: DC-DC Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 4.5V ~ 16V
Technology: N-Channel MOSFET
Current - Output / Channel: 60A
Applications: DC-DC Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCP252160MNTWG |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Applications: DC-DC Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 4.5V ~ 16V
Technology: N-Channel MOSFET
Current - Output / Channel: 60A
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Applications: DC-DC Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 4.5V ~ 16V
Technology: N-Channel MOSFET
Current - Output / Channel: 60A
на замовлення 2641 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.53 грн |
| 10+ | 69.30 грн |
| 25+ | 62.83 грн |
| 100+ | 52.31 грн |
| 250+ | 49.13 грн |
| 500+ | 47.22 грн |
| 1000+ | 45.88 грн |
| LV58063MCZ-AH |
|
Виробник: onsemi
Description: IC REG BUCK ADJ 3A 8SOIC/SOP8L
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 8V
Voltage - Output (Max): 28V
Synchronous Rectifier: No
Supplier Device Package: 8-SOIC-EP/SOP8L
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 370kHz
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tube
Description: IC REG BUCK ADJ 3A 8SOIC/SOP8L
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 8V
Voltage - Output (Max): 28V
Synchronous Rectifier: No
Supplier Device Package: 8-SOIC-EP/SOP8L
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 370kHz
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tube
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 249+ | 80.44 грн |
| NTMFS5C426NLT1G |
|
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: SINGLE N-CHANNEL POWER MOSFET 40
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 53.08 грн |
| 3000+ | 49.16 грн |
| NTMFS5C426NLT1G |
|
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: SINGLE N-CHANNEL POWER MOSFET 40
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.78 грн |
| 10+ | 97.62 грн |
| 100+ | 73.70 грн |
| 500+ | 55.28 грн |
| 2SC4363-AC |
|
Виробник: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Supplier Device Package: 3-SPA
Transistor Type: NPN - Pre-Biased
Mounting Type: Through Hole
Package / Case: 3-SSIP
Part Status: Active
Packaging: Bulk
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Supplier Device Package: 3-SPA
Transistor Type: NPN - Pre-Biased
Mounting Type: Through Hole
Package / Case: 3-SSIP
Part Status: Active
Packaging: Bulk
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1902+ | 11.79 грн |
| STR-RSL10-MESH-KIT-GEVK |
|
Виробник: onsemi
Description: RSL10 BLE MESH KIT
Frequency: 2.4GHz
For Use With/Related Products: RSL10
Packaging: Bulk
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® 5
Description: RSL10 BLE MESH KIT
Frequency: 2.4GHz
For Use With/Related Products: RSL10
Packaging: Bulk
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® 5
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17098.02 грн |
| CAT28LV65-25 |
Виробник: onsemi
Description: IC EEPROM 64KBIT
Memory Organization: 8K x 8
Access Time: 250 ns
Write Cycle Time - Word, Page: 5ms
Part Status: Obsolete
Memory Format: EEPROM
Technology: EEPROM
Voltage - Supply: 3V ~ 3.6V
Memory Size: 64Kbit
Packaging: Bulk
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT
Memory Organization: 8K x 8
Access Time: 250 ns
Write Cycle Time - Word, Page: 5ms
Part Status: Obsolete
Memory Format: EEPROM
Technology: EEPROM
Voltage - Supply: 3V ~ 3.6V
Memory Size: 64Kbit
Packaging: Bulk
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
DigiKey Programmable: Not Verified
на замовлення 2433 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 111+ | 208.60 грн |
| NUF6107MNTBG |
|
Виробник: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Bulk
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 30pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Bulk
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 30pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
на замовлення 183000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1297+ | 14.94 грн |
| FGHL75T65LQDT |
|
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 152 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/568ns
Switching Energy: 1.88mJ (on), 2.38mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 793 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 469 W
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 152 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/568ns
Switching Energy: 1.88mJ (on), 2.38mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 793 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 469 W
на замовлення 213 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 550.36 грн |
| 10+ | 361.12 грн |
| FGHL75T65MQDT |
|
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/118ns
Switching Energy: 2.35mJ (on), 1.25mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/118ns
Switching Energy: 2.35mJ (on), 1.25mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 478.00 грн |
| 10+ | 311.61 грн |
| FGHL75T65MQDTL4 |
|
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/181ns
Switching Energy: 1.2mJ (on), 1.1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/181ns
Switching Energy: 1.2mJ (on), 1.1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
на замовлення 327 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 508.02 грн |
| 30+ | 283.37 грн |
| 120+ | 238.14 грн |
| FGHL75T65LQDTL4 |
|
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/548ns
Switching Energy: 1.01mJ (on), 2.53mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 779 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 469 W
Description: IGBT TRENCH FS 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/548ns
Switching Energy: 1.01mJ (on), 2.53mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 779 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 469 W
на замовлення 277 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 577.30 грн |
| 30+ | 325.52 грн |
| 120+ | 274.89 грн |
| NVD5862NT4G-VF01 |
|
Виробник: onsemi
Description: NFET DPAK 60V 98A 5.7MOHM
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.1W
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Description: NFET DPAK 60V 98A 5.7MOHM
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.1W
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| NTMJS0D8N04CLTWG |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 56A/368A 8LFPAK
Description: MOSFET N-CH 40V 56A/368A 8LFPAK
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTMJS0D8N04CLTWG |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 56A/368A 8LFPAK
Description: MOSFET N-CH 40V 56A/368A 8LFPAK
товару немає в наявності
В кошику
од. на суму грн.
| SMBT1230LT1G |
на замовлення 13603 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1397+ | 13.85 грн |
| 3EZ13D5 |
|
Виробник: onsemi
Description: DIODE ZENER 13V 3W DO41
Description: DIODE ZENER 13V 3W DO41
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2404+ | 9.37 грн |
| MC1066DBR2 |
|
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 310+ | 71.48 грн |
| 1N6292AG |
|
Виробник: onsemi
Description: TVS DIODE 64.1VWM 103VC AXIAL
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 64.1V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 103V
Voltage - Breakdown (Min): 71.3V
Description: TVS DIODE 64.1VWM 103VC AXIAL
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 64.1V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 103V
Voltage - Breakdown (Min): 71.3V
на замовлення 4118 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1519+ | 14.40 грн |
| 1N6292ARL4G |
|
Виробник: onsemi
Description: TVS DIODE 64.1VWM 103VC AXIAL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 103V
Voltage - Breakdown (Min): 71.3V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 64.1V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
Description: TVS DIODE 64.1VWM 103VC AXIAL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 103V
Voltage - Breakdown (Min): 71.3V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 64.1V
Applications: General Purpose
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1268+ | 17.69 грн |