Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AR0135AT2M00XUEAH3-GEVB | onsemi | Description: BOARD EVAL 1.2 MP 1/3" CIS MONO |
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AR0135CS2M25SUEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS MONO Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0135CS Supplied Contents: Board(s) Part Status: Active |
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AR0135AT2M00XUD20 | onsemi |
Description: LDO REGULATOR, ULTRA-LOW NOISE, Packaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 54 |
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AR0135AT2M25XUEA0-DRBR1 | onsemi | Description: IMAGE SENSOR 1MP 1/3 CIS SO |
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AR0135CS2M00SUEA0-TRBR | onsemi | Description: IMAGE SENSOR 1MP 1/3 CIS SO |
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AR0135CS2C25SUEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS COLOR Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0135CS Supplied Contents: Board(s) Part Status: Active |
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AR0135CS2C19SUEA0-DPBR | onsemi | Description: IMAGE SENSOR 1MP 1/3 CIS SO |
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AR0135CS2C00SUEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS COLOR Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0135CS Supplied Contents: Board(s) Part Status: Active |
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AR0135CS2C19SUEA0-DRBR | onsemi |
Description: IMAGE SENSOR 1MP 1/3 CIS SO Packaging: Tray Package / Case: 63-LBGA Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Active Frames per Second: 60 |
на замовлення 2100 шт: термін постачання 21-31 дні (днів) |
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AR0135AT2M00XUEA0-VL-TPBR | onsemi |
Description: LDO REGULATOR, ULTRA-LOW NOISE, Packaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 54 |
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AR0135AT2M25XUD20 | onsemi |
Description: LDO REGULATOR, ULTRA-LOW NOISE, Packaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 54 |
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AR0135AT2M00XUEA0-DRBR1 | onsemi | Description: IMAGE SENSOR 1MP 1/3 CIS SO |
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AR0135AT2M00XUEA0-DRBR1 | onsemi | Description: IMAGE SENSOR 1MP 1/3 CIS SO |
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AR0135CS2C19SUEA0-DRBR1 | onsemi | Description: IMAGE SENSOR 1MP 1/3 CIS SO |
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AR0135CSSM25SUEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0135CS Supplied Contents: Board(s) Part Status: Active |
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AR0135AT2M00XUEA0-DPBR1 | onsemi | Description: IMAGE SENSOR 1MP 1/3 CIS SO |
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AR0135CS2C00SUEA0-DRBR1 | onsemi |
Description: IMAGE SENSOR 1MP 1/3 CIS SO Packaging: Tray Package / Case: 63-LBGA Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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AR0135CS2C00SUEA0-DPBR1 | onsemi |
Description: IMAGE SENSOR 1MP 1/3 CIS SO Packaging: Tray Package / Case: 63-LBGA Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete |
на замовлення 129 шт: термін постачання 21-31 дні (днів) |
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AR0135CS2M00SUEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS MONO Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0135CS Supplied Contents: Board(s) Part Status: Active |
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AR0135AT2C00XUEAH3-GEVB | onsemi | Description: BOARD EVAL 1.2 MP 1/3" CIS RGB 0 |
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AR0135AT2M25XUEA0-DRBR | onsemi |
Description: IMAGE SENSOR 1MP 1/3 CIS SO Packaging: Tray Package / Case: 63-LBGA Type: CMOS Operating Temperature: -40°C ~ 105°C Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Active |
на замовлення 1098 шт: термін постачання 21-31 дні (днів) |
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AR0135CS2M00SUEA0-DRBR1 | onsemi | Description: IMAGE SENSOR 1MP 1/3 CIS SO |
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AR0135CS2C19SUEA0-DPBR1 | onsemi | Description: IMAGE SENSOR 1MP 1/3 CIS SO |
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AR0135AT2M25XUEA0-DPBR1 | onsemi | Description: IMAGE SENSOR 1MP 1/3 CIS SO |
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NXH25C120L2C2SG | onsemi |
Description: IGBT MODULE, CIB 1200 V, 25 A IG Packaging: Tube Package / Case: 26-PowerDIP Module (1.199", 47.20mm) Mounting Type: Through Hole Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: 26-DIP Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 6.2 nF @ 20 V |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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CPH6354-TL-H | onsemi |
Description: CPH6354 - MOSFET P-CHANNEL SINGL Packaging: Bulk Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: 6-CPH Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V |
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NCP154MX180270TAG | onsemi | Description: IC REG LINEAR 1.8V/2.7V 8XDFN |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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NSG1001MXTAG | onsemi |
Description: IC RF SWITCH SPDT 8.5GHZ 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerXFDFN Mounting Type: Surface Mount, Wettable Flank Circuit: SPDT RF Type: 802.11a/b/g/n/ac/ax, Bluetooth, LTE, WLAN Operating Temperature: -40°C ~ 125°C Insertion Loss: 0.65dB Frequency Range: 100MHz ~ 8.5GHz Test Frequency: 8.5GHz Isolation: 20dB Supplier Device Package: 6-DFN (1x1) Part Status: Active |
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NSG1001MXTAG | onsemi |
Description: IC RF SWITCH SPDT 8.5GHZ 6DFN Packaging: Cut Tape (CT) Package / Case: 6-PowerXFDFN Mounting Type: Surface Mount, Wettable Flank Circuit: SPDT RF Type: 802.11a/b/g/n/ac/ax, Bluetooth, LTE, WLAN Operating Temperature: -40°C ~ 125°C Insertion Loss: 0.65dB Frequency Range: 100MHz ~ 8.5GHz Test Frequency: 8.5GHz Isolation: 20dB Supplier Device Package: 6-DFN (1x1) Part Status: Active |
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NSVG1001MXTAG | onsemi |
Description: IC RF SWITCH SPDT 8.5GHZ 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerXFDFN Mounting Type: Surface Mount, Wettable Flank Circuit: SPDT RF Type: 802.11a/b/g/n/ac/ax, Bluetooth, LTE, WLAN Operating Temperature: -40°C ~ 125°C Insertion Loss: 0.65dB Frequency Range: 100MHz ~ 8.5GHz Test Frequency: 8.5GHz Isolation: 20dB Supplier Device Package: 6-DFN (1x1) Part Status: Active |
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NSVG1001MXTAG | onsemi |
Description: IC RF SWITCH SPDT 8.5GHZ 6DFN Packaging: Cut Tape (CT) Package / Case: 6-PowerXFDFN Mounting Type: Surface Mount, Wettable Flank Circuit: SPDT RF Type: 802.11a/b/g/n/ac/ax, Bluetooth, LTE, WLAN Operating Temperature: -40°C ~ 125°C Insertion Loss: 0.65dB Frequency Range: 100MHz ~ 8.5GHz Test Frequency: 8.5GHz Isolation: 20dB Supplier Device Package: 6-DFN (1x1) Part Status: Active |
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LC06511D01MXTAG | onsemi |
Description: IC BATT PROT LI-ION 1CELL 6X2DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 6-X2DFN (1.4x1.4) Fault Protection: Over Current, Over Temperature Part Status: Obsolete |
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BAV99_L99Z | onsemi |
Description: DIODE ARRAY GP 70V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V |
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BAV99_S00Z | onsemi | Description: DIODE HI COND 70V 200MA SOT-23 |
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NTBG080N120SC1 | onsemi |
Description: SICFET N-CH 1200V 30A D2PAK-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V |
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NTBG080N120SC1 | onsemi |
Description: SICFET N-CH 1200V 30A D2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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AR0238CSSC12SHRA0-DP1 | onsemi |
Description: IMAGE SENSOR 2MP 1/3 CIS SO Packaging: Tray Package / Case: 48-PLCC Type: CMOS Voltage - Supply: 1.8V, 2.8V Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1080V Supplier Device Package: 48-PLCC (11.43x11.43) Frames per Second: 60 |
на замовлення 4489 шт: термін постачання 21-31 дні (днів) |
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NSVMMBT5550LT1G | onsemi |
Description: TRANS NPN 140V 0.6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 225 mW Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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LC786821E-6E04-3H | onsemi |
Description: USB AUDIO (BLUETOOH SUPPORTED) Packaging: Tape & Reel (TR) Package / Case: 100-BQFP Mounting Type: Surface Mount Function: Audio Signal Processor Interface: Serial, SPI Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Applications: Consumer Audio Supplier Device Package: 100-PQFP/QIP (20x14) Part Status: Active Number of Channels: 3 |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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NCP1342DADBDGD1R2G | onsemi |
Description: HIGH FREQUENCY QUASI-RESONANT FL Packaging: Tape & Reel (TR) Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 500kHz Internal Switch(s): No Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9V ~ 28V Supplier Device Package: 9-SOIC Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 17 V Control Features: Frequency Control, Soft Start Part Status: Active |
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NCP1342DADBDGD1R2G | onsemi |
Description: HIGH FREQUENCY QUASI-RESONANT FL Packaging: Cut Tape (CT) Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 500kHz Internal Switch(s): No Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9V ~ 28V Supplier Device Package: 9-SOIC Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 17 V Control Features: Frequency Control, Soft Start Part Status: Active |
на замовлення 2455 шт: термін постачання 21-31 дні (днів) |
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NVMFS5833NLT1G | onsemi |
Description: MOSFET N-CH 40V 16A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V Power Dissipation (Max): 3.7W (Ta) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V |
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FDA8440 | onsemi |
Description: MOSFET N-CH 40V 30A/100A TO3PN Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V |
на замовлення 2091 шт: термін постачання 21-31 дні (днів) |
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MMSZ20VCF | onsemi |
Description: DIODE ZENER 20V 1W SOD123F Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123F Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 15 V |
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MMSZ20VCF | onsemi |
Description: DIODE ZENER 20V 1W SOD123F Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123F Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 15 V |
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MC74LCX374DWR2G | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20SOIC Packaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Current - Quiescent (Iq): 10 µA Current - Output High, Low: 24mA, 24mA Trigger Type: Positive Edge Clock Frequency: 150 MHz Input Capacitance: 7 pF Supplier Device Package: 20-SOIC Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF Part Status: Active Number of Bits per Element: 8 |
на замовлення 1710 шт: термін постачання 21-31 дні (днів) |
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AR0239ATSC00XUEA0-DRBR-E | onsemi | Description: 2.3MP, 1/2.7 INCH CMOS DIGITAL I |
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AR0239ATSC00XUEA0-DPBR-E | onsemi | Description: 2.3MP, 1/2.7 INCH CMOS DIGITAL I |
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BZX79C20 | onsemi |
Description: ZENER DIODE, 20V, 5%, 0.5W, UNID Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 14 V |
на замовлення 143000 шт: термін постачання 21-31 дні (днів) |
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MT26AT1G | onsemi | Description: TVS DIODE 26VWM POWERMITE |
на замовлення 14980 шт: термін постачання 21-31 дні (днів) |
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MT26AT1 | onsemi | Description: TVS DIODE 26VWM POWERMITE |
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1PMT26AT1G | onsemi | Description: TVS DIODE 26VWM 42.1VC POWERMITE |
на замовлення 3986 шт: термін постачання 21-31 дні (днів) |
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1PMT26AT1 | onsemi | Description: TVS DIODE 26VWM 42.1VC POWERMITE |
на замовлення 19401 шт: термін постачання 21-31 дні (днів) |
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MURD340T4G | onsemi | Description: DIODE GEN PURP 400V 3A DPAK |
на замовлення 52500 шт: термін постачання 21-31 дні (днів) |
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NDT451N | onsemi | Description: MOSFET N-CH 30V 5.5A SOT-223-4 |
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NDT451N | onsemi | Description: MOSFET N-CH 30V 5.5A SOT-223-4 |
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LV8310HGR2G | onsemi |
Description: 1PH PRE SENSOR CLOSE ; SI Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 50mA Interface: PWM Operating Temperature: -40°C ~ 105°C Output Configuration: Pre-Driver - High Side/Low Side Voltage - Supply: 12V Applications: Fan Controller Technology: NMOS, PMOS Voltage - Load: 4.7V ~ 5.3V Supplier Device Package: 16-TSSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Obsolete |
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FS6377-01IG-XTD | onsemi | Description: IC CLOCK GEN 3-PLL PROGR 16-SOIC |
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EFC4K110NUZTDG | onsemi |
Description: MOSFET 2N-CH 24V 25A 10WLCSP Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 25A Gate Charge (Qg) (Max) @ Vgs: 49nC @ 4.5V Supplier Device Package: 10-WLCSP (3.2x2.1) Part Status: Last Time Buy |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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EFC4K110NUZTDG | onsemi |
Description: MOSFET 2N-CH 24V 25A 10WLCSP Packaging: Cut Tape (CT) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 25A Gate Charge (Qg) (Max) @ Vgs: 49nC @ 4.5V Supplier Device Package: 10-WLCSP (3.2x2.1) Part Status: Last Time Buy |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
AR0135AT2M00XUEAH3-GEVB |
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS MONO
Description: BOARD EVAL 1.2 MP 1/3" CIS MONO
товар відсутній
AR0135CS2M25SUEAH3-GEVB |
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS MONO
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0135CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1.2 MP 1/3" CIS MONO
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0135CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
AR0135AT2M00XUD20 |
Виробник: onsemi
Description: LDO REGULATOR, ULTRA-LOW NOISE,
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
Description: LDO REGULATOR, ULTRA-LOW NOISE,
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
товар відсутній
AR0135CS2C25SUEAH3-GEVB |
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS COLOR
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0135CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1.2 MP 1/3" CIS COLOR
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0135CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
AR0135CS2C00SUEAH3-GEVB |
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS COLOR
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0135CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1.2 MP 1/3" CIS COLOR
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0135CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
AR0135CS2C19SUEA0-DRBR |
Виробник: onsemi
Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Active
Frames per Second: 60
Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Active
Frames per Second: 60
на замовлення 2100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2121.71 грн |
10+ | 1702.58 грн |
25+ | 1508 грн |
80+ | 1369.55 грн |
440+ | 1278.25 грн |
AR0135AT2M00XUEA0-VL-TPBR |
Виробник: onsemi
Description: LDO REGULATOR, ULTRA-LOW NOISE,
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
Description: LDO REGULATOR, ULTRA-LOW NOISE,
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
товар відсутній
AR0135AT2M25XUD20 |
Виробник: onsemi
Description: LDO REGULATOR, ULTRA-LOW NOISE,
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
Description: LDO REGULATOR, ULTRA-LOW NOISE,
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
товар відсутній
AR0135CSSM25SUEAH3-GEVB |
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0135CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0135CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
AR0135CS2C00SUEA0-DRBR1 |
Виробник: onsemi
Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
на замовлення 250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2428.88 грн |
10+ | 1949.31 грн |
25+ | 1726.55 грн |
AR0135CS2C00SUEA0-DPBR1 |
Виробник: onsemi
Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
на замовлення 129 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2495.16 грн |
10+ | 2002.02 грн |
25+ | 1773.24 грн |
AR0135CS2M00SUEAH3-GEVB |
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS MONO
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0135CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1.2 MP 1/3" CIS MONO
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0135CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
AR0135AT2C00XUEAH3-GEVB |
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS RGB 0
Description: BOARD EVAL 1.2 MP 1/3" CIS RGB 0
товар відсутній
AR0135AT2M25XUEA0-DRBR |
Виробник: onsemi
Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Active
Description: IMAGE SENSOR 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Active
на замовлення 1098 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2574.98 грн |
5+ | 2367.2 грн |
10+ | 2141.75 грн |
25+ | 1851.26 грн |
40+ | 1639.69 грн |
80+ | 1586.79 грн |
NXH25C120L2C2SG |
Виробник: onsemi
Description: IGBT MODULE, CIB 1200 V, 25 A IG
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
Mounting Type: Through Hole
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 26-DIP
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 20 V
Description: IGBT MODULE, CIB 1200 V, 25 A IG
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
Mounting Type: Through Hole
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 26-DIP
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 20 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4879.14 грн |
CPH6354-TL-H |
Виробник: onsemi
Description: CPH6354 - MOSFET P-CHANNEL SINGL
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 6-CPH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
Description: CPH6354 - MOSFET P-CHANNEL SINGL
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 6-CPH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
товар відсутній
NCP154MX180270TAG |
Виробник: onsemi
Description: IC REG LINEAR 1.8V/2.7V 8XDFN
Description: IC REG LINEAR 1.8V/2.7V 8XDFN
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1027+ | 19.93 грн |
NSG1001MXTAG |
Виробник: onsemi
Description: IC RF SWITCH SPDT 8.5GHZ 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerXFDFN
Mounting Type: Surface Mount, Wettable Flank
Circuit: SPDT
RF Type: 802.11a/b/g/n/ac/ax, Bluetooth, LTE, WLAN
Operating Temperature: -40°C ~ 125°C
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 8.5GHz
Test Frequency: 8.5GHz
Isolation: 20dB
Supplier Device Package: 6-DFN (1x1)
Part Status: Active
Description: IC RF SWITCH SPDT 8.5GHZ 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerXFDFN
Mounting Type: Surface Mount, Wettable Flank
Circuit: SPDT
RF Type: 802.11a/b/g/n/ac/ax, Bluetooth, LTE, WLAN
Operating Temperature: -40°C ~ 125°C
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 8.5GHz
Test Frequency: 8.5GHz
Isolation: 20dB
Supplier Device Package: 6-DFN (1x1)
Part Status: Active
товар відсутній
NSG1001MXTAG |
Виробник: onsemi
Description: IC RF SWITCH SPDT 8.5GHZ 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerXFDFN
Mounting Type: Surface Mount, Wettable Flank
Circuit: SPDT
RF Type: 802.11a/b/g/n/ac/ax, Bluetooth, LTE, WLAN
Operating Temperature: -40°C ~ 125°C
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 8.5GHz
Test Frequency: 8.5GHz
Isolation: 20dB
Supplier Device Package: 6-DFN (1x1)
Part Status: Active
Description: IC RF SWITCH SPDT 8.5GHZ 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerXFDFN
Mounting Type: Surface Mount, Wettable Flank
Circuit: SPDT
RF Type: 802.11a/b/g/n/ac/ax, Bluetooth, LTE, WLAN
Operating Temperature: -40°C ~ 125°C
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 8.5GHz
Test Frequency: 8.5GHz
Isolation: 20dB
Supplier Device Package: 6-DFN (1x1)
Part Status: Active
товар відсутній
NSVG1001MXTAG |
Виробник: onsemi
Description: IC RF SWITCH SPDT 8.5GHZ 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerXFDFN
Mounting Type: Surface Mount, Wettable Flank
Circuit: SPDT
RF Type: 802.11a/b/g/n/ac/ax, Bluetooth, LTE, WLAN
Operating Temperature: -40°C ~ 125°C
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 8.5GHz
Test Frequency: 8.5GHz
Isolation: 20dB
Supplier Device Package: 6-DFN (1x1)
Part Status: Active
Description: IC RF SWITCH SPDT 8.5GHZ 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerXFDFN
Mounting Type: Surface Mount, Wettable Flank
Circuit: SPDT
RF Type: 802.11a/b/g/n/ac/ax, Bluetooth, LTE, WLAN
Operating Temperature: -40°C ~ 125°C
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 8.5GHz
Test Frequency: 8.5GHz
Isolation: 20dB
Supplier Device Package: 6-DFN (1x1)
Part Status: Active
товар відсутній
NSVG1001MXTAG |
Виробник: onsemi
Description: IC RF SWITCH SPDT 8.5GHZ 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerXFDFN
Mounting Type: Surface Mount, Wettable Flank
Circuit: SPDT
RF Type: 802.11a/b/g/n/ac/ax, Bluetooth, LTE, WLAN
Operating Temperature: -40°C ~ 125°C
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 8.5GHz
Test Frequency: 8.5GHz
Isolation: 20dB
Supplier Device Package: 6-DFN (1x1)
Part Status: Active
Description: IC RF SWITCH SPDT 8.5GHZ 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerXFDFN
Mounting Type: Surface Mount, Wettable Flank
Circuit: SPDT
RF Type: 802.11a/b/g/n/ac/ax, Bluetooth, LTE, WLAN
Operating Temperature: -40°C ~ 125°C
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 8.5GHz
Test Frequency: 8.5GHz
Isolation: 20dB
Supplier Device Package: 6-DFN (1x1)
Part Status: Active
товар відсутній
LC06511D01MXTAG |
Виробник: onsemi
Description: IC BATT PROT LI-ION 1CELL 6X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 6-X2DFN (1.4x1.4)
Fault Protection: Over Current, Over Temperature
Part Status: Obsolete
Description: IC BATT PROT LI-ION 1CELL 6X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 6-X2DFN (1.4x1.4)
Fault Protection: Over Current, Over Temperature
Part Status: Obsolete
товар відсутній
BAV99_L99Z |
Виробник: onsemi
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
товар відсутній
NTBG080N120SC1 |
Виробник: onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
товар відсутній
NTBG080N120SC1 |
Виробник: onsemi
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
Description: SICFET N-CH 1200V 30A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 950.74 грн |
10+ | 840.93 грн |
AR0238CSSC12SHRA0-DP1 |
Виробник: onsemi
Description: IMAGE SENSOR 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1080V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60
Description: IMAGE SENSOR 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 48-PLCC
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1080V
Supplier Device Package: 48-PLCC (11.43x11.43)
Frames per Second: 60
на замовлення 4489 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
50+ | 745.85 грн |
NSVMMBT5550LT1G |
Виробник: onsemi
Description: TRANS NPN 140V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 225 mW
Qualification: AEC-Q101
Description: TRANS NPN 140V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 225 mW
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.38 грн |
LC786821E-6E04-3H |
Виробник: onsemi
Description: USB AUDIO (BLUETOOH SUPPORTED)
Packaging: Tape & Reel (TR)
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Function: Audio Signal Processor
Interface: Serial, SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: Consumer Audio
Supplier Device Package: 100-PQFP/QIP (20x14)
Part Status: Active
Number of Channels: 3
Description: USB AUDIO (BLUETOOH SUPPORTED)
Packaging: Tape & Reel (TR)
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Function: Audio Signal Processor
Interface: Serial, SPI
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: Consumer Audio
Supplier Device Package: 100-PQFP/QIP (20x14)
Part Status: Active
Number of Channels: 3
на замовлення 250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
250+ | 716.12 грн |
NCP1342DADBDGD1R2G |
Виробник: onsemi
Description: HIGH FREQUENCY QUASI-RESONANT FL
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 500kHz
Internal Switch(s): No
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 28V
Supplier Device Package: 9-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 17 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Description: HIGH FREQUENCY QUASI-RESONANT FL
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 500kHz
Internal Switch(s): No
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 28V
Supplier Device Package: 9-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 17 V
Control Features: Frequency Control, Soft Start
Part Status: Active
товар відсутній
NCP1342DADBDGD1R2G |
Виробник: onsemi
Description: HIGH FREQUENCY QUASI-RESONANT FL
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 500kHz
Internal Switch(s): No
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 28V
Supplier Device Package: 9-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 17 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Description: HIGH FREQUENCY QUASI-RESONANT FL
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 500kHz
Internal Switch(s): No
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 28V
Supplier Device Package: 9-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 17 V
Control Features: Frequency Control, Soft Start
Part Status: Active
на замовлення 2455 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 92.65 грн |
10+ | 79.54 грн |
25+ | 75.47 грн |
100+ | 54.39 грн |
250+ | 48.07 грн |
500+ | 45.54 грн |
1000+ | 34.84 грн |
NVMFS5833NLT1G |
Виробник: onsemi
Description: MOSFET N-CH 40V 16A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V
Description: MOSFET N-CH 40V 16A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V
товар відсутній
FDA8440 |
Виробник: onsemi
Description: MOSFET N-CH 40V 30A/100A TO3PN
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V
Description: MOSFET N-CH 40V 30A/100A TO3PN
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V
на замовлення 2091 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
70+ | 284.31 грн |
MMSZ20VCF |
Виробник: onsemi
Description: DIODE ZENER 20V 1W SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
Description: DIODE ZENER 20V 1W SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
товар відсутній
MMSZ20VCF |
Виробник: onsemi
Description: DIODE ZENER 20V 1W SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
Description: DIODE ZENER 20V 1W SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
товар відсутній
MC74LCX374DWR2G |
Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
на замовлення 1710 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
620+ | 34.21 грн |
AR0239ATSC00XUEA0-DRBR-E |
Виробник: onsemi
Description: 2.3MP, 1/2.7 INCH CMOS DIGITAL I
Description: 2.3MP, 1/2.7 INCH CMOS DIGITAL I
товар відсутній
AR0239ATSC00XUEA0-DPBR-E |
Виробник: onsemi
Description: 2.3MP, 1/2.7 INCH CMOS DIGITAL I
Description: 2.3MP, 1/2.7 INCH CMOS DIGITAL I
товар відсутній
BZX79C20 |
Виробник: onsemi
Description: ZENER DIODE, 20V, 5%, 0.5W, UNID
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Description: ZENER DIODE, 20V, 5%, 0.5W, UNID
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
на замовлення 143000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 1.97 грн |
MT26AT1G |
Виробник: onsemi
Description: TVS DIODE 26VWM POWERMITE
Description: TVS DIODE 26VWM POWERMITE
на замовлення 14980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1697+ | 12.89 грн |
1PMT26AT1G |
Виробник: onsemi
Description: TVS DIODE 26VWM 42.1VC POWERMITE
Description: TVS DIODE 26VWM 42.1VC POWERMITE
на замовлення 3986 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3986+ | 6.45 грн |
1PMT26AT1 |
Виробник: onsemi
Description: TVS DIODE 26VWM 42.1VC POWERMITE
Description: TVS DIODE 26VWM 42.1VC POWERMITE
на замовлення 19401 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3206+ | 6.45 грн |
MURD340T4G |
Виробник: onsemi
Description: DIODE GEN PURP 400V 3A DPAK
Description: DIODE GEN PURP 400V 3A DPAK
на замовлення 52500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
651+ | 32.95 грн |
LV8310HGR2G |
Виробник: onsemi
Description: 1PH PRE SENSOR CLOSE ; SI
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 50mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - High Side/Low Side
Voltage - Supply: 12V
Applications: Fan Controller
Technology: NMOS, PMOS
Voltage - Load: 4.7V ~ 5.3V
Supplier Device Package: 16-TSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Obsolete
Description: 1PH PRE SENSOR CLOSE ; SI
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 50mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - High Side/Low Side
Voltage - Supply: 12V
Applications: Fan Controller
Technology: NMOS, PMOS
Voltage - Load: 4.7V ~ 5.3V
Supplier Device Package: 16-TSSOP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Obsolete
товар відсутній
EFC4K110NUZTDG |
Виробник: onsemi
Description: MOSFET 2N-CH 24V 25A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 25A
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 4.5V
Supplier Device Package: 10-WLCSP (3.2x2.1)
Part Status: Last Time Buy
Description: MOSFET 2N-CH 24V 25A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 25A
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 4.5V
Supplier Device Package: 10-WLCSP (3.2x2.1)
Part Status: Last Time Buy
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 55.93 грн |
EFC4K110NUZTDG |
Виробник: onsemi
Description: MOSFET 2N-CH 24V 25A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 25A
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 4.5V
Supplier Device Package: 10-WLCSP (3.2x2.1)
Part Status: Last Time Buy
Description: MOSFET 2N-CH 24V 25A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 25A
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 4.5V
Supplier Device Package: 10-WLCSP (3.2x2.1)
Part Status: Last Time Buy
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 129 грн |
10+ | 111.52 грн |
100+ | 89.62 грн |
500+ | 69.1 грн |
1000+ | 57.26 грн |
2000+ | 53.31 грн |