| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FW297-TL-2W | onsemi |
Description: MOSFET 2N-CH 60V 4.5A 8SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
FW297-TL-2W | onsemi |
Description: MOSFET 2N-CH 60V 4.5A 8SOIC |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
EFC4615R-TR | onsemi |
Description: MOSFET N-CH 24V 6A EFCPPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, FCBGA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: EFCP1515-4CC-037 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| CAS25160LI-G-DF | onsemi |
Description: CAS25160 - 16KB SPI SER CMOS EEP Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 188900 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
| SVC251SPA-AC | onsemi |
Description: VARIABLE-CAPACITANCE DIODEPackaging: Bulk Package / Case: 2-SIP Mounting Type: Through Hole Diode Type: Single Operating Temperature: 100°C (TJ) Voltage - Peak Reverse (Max): 12 V Capacitance Ratio: 1.7 Capacitance @ Vr, F: 38pF @ 1.6V, 1MHz Capacitance Ratio Condition: C1.6/C5 Supplier Device Package: 2-SPA |
на замовлення 233571 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
| SVC233-TB-E-ON | onsemi |
Description: VARIABLE-CAPACITANCE DIODE (IOCA Packaging: Bulk |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
|
MM74HCT573MTCX | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-TSSOPPackaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 7.2mA, 7.2mA Delay Time - Propagation: 17ns Supplier Device Package: 20-TSSOP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
MM74HCT573MTCX | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 7.2mA, 7.2mA Delay Time - Propagation: 17ns Supplier Device Package: 20-TSSOP Part Status: Active |
на замовлення 2344 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| FDT3612-SN00151 | onsemi | Description: MOSFET N-CH 100V SOT223 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LV8081GQ-TE-L-E | onsemi |
Description: TWO CHANNELS CONSTANT-CURRENT H- Packaging: Bulk Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
|
LV56081GP-TE-L-E | onsemi |
Description: IC REG CHG PUMP -5.5V DL 24VCT Packaging: Bulk Package / Case: 24-WFQFN Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 2 Function: Ratiometric Current - Output: 20mA Operating Temperature: -20°C ~ 80°C Output Configuration: Positive and Negative Frequency - Switching: 2MHz Voltage - Input (Max): 3.45V Topology: Charge Pump Supplier Device Package: 24-VCT (3.5x3.5) Synchronous Rectifier: Yes Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): -5.5V, 15V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
2N5302G | onsemi |
Description: TRANS NPN 60V 30A TO204Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V Frequency - Transition: 2MHz Supplier Device Package: TO-204 (TO-3) Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 200 W |
на замовлення 1330 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MMSZ5237ET1G | onsemi |
Description: DIODE ZENER 8.2V 500MW SOD123 |
на замовлення 10263 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| SZMMSZ5245CT1G | onsemi | Description: ZENER DIODE 500 MW SOD-123 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
NVBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE N-CHANNELPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 479µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
NVBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE N-CHANNELPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 479µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1178 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNEPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 479µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNEPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 479µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V |
на замовлення 5930 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NVBLS1D1N08H | onsemi |
Description: MOSFET N-CH 80V 41A/351A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 4.2W (Ta), 311W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NVBLS1D1N08H | onsemi |
Description: MOSFET N-CH 80V 41A/351A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 4.2W (Ta), 311W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 6944 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTBLS1D5N08MC | onsemi |
Description: MOSFET N-CH 80V 32A/298A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 710µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTBLS1D5N08MC | onsemi |
Description: MOSFET N-CH 80V 32A/298A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 710µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V |
на замовлення 13400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FDBL86062-F085 | onsemi |
Description: MOSFET N-CH 100V 300A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FDBL86062-F085 | onsemi |
Description: MOSFET N-CH 100V 300A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V |
на замовлення 3796 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FDBL0200N100 | onsemi |
Description: MOSFET N-CH 100V 300A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FDBL0200N100 | onsemi |
Description: MOSFET N-CH 100V 300A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V |
на замовлення 4068 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FDBL86063-F085 | onsemi |
Description: MOSFET N-CH 100V 240A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FDBL86063-F085 | onsemi |
Description: MOSFET N-CH 100V 240A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V |
на замовлення 3965 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NTBL095N65S3H | onsemi |
Description: SUPERFET3 FAST 95MOHM TOLLPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.8mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
NCP4304AMNTWG | onsemi |
Description: IC SEC SIDE SYNC RECT DRV 8DFNPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 9.5V ~ 30V Applications: Secondary-Side Controller Supplier Device Package: 8-DFN (4x4) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 980 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NCP2817BFCCT2G | onsemi |
Description: IC AMP AB STEREO 42MW 12FLIPCHIPPackaging: Cut Tape (CT) Features: Depop Package / Case: 12-UFBGA, FCBGA Output Type: 2-Channel (Stereo) Mounting Type: Surface Mount Type: Class AB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Max Output Power x Channels @ Load: 42mW x 2 @ 16Ohm Supplier Device Package: 12-FlipChip (1.62x1.22) Part Status: Not For New Designs |
на замовлення 2924 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC10H175FN | onsemi |
Description: IC DTYPE LATCH QUINT 20PLCC |
на замовлення 2530 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC10H130FNG | onsemi |
Description: IC S-R LATCH DUAL 20PLCC |
на замовлення 3063 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC10H130FNR2 | onsemi |
Description: IC S-R LATCH DUAL 20PLCC |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC10H175FNR2 | onsemi |
Description: IC DTYPE LATCH QUINT 20PLCC |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NCV4276CDTADJT5G | onsemi |
Description: IC REG LIN POS ADJ 400MA DPAK-5Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: DPAK-5 Voltage - Output (Max): 20V Voltage - Output (Min/Fixed): 2.5V Grade: Automotive PSRR: 70dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 35 mA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
NCV4276CDTADJT5G | onsemi |
Description: IC REG LIN POS ADJ 400MA DPAK-5Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: DPAK-5 Voltage - Output (Max): 20V Voltage - Output (Min/Fixed): 2.5V Grade: Automotive PSRR: 70dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 35 mA Qualification: AEC-Q100 |
на замовлення 1426 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC10E446FNG | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
на замовлення 111 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC10E446FNR2 | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
на замовлення 940 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC10E446FNR2G | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
на замовлення 7630 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC100E446FN | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
на замовлення 1715 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC100E446FNR2G | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
на замовлення 3221 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC100E446FNG | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
на замовлення 2479 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MC10E446FN | onsemi |
Description: IC INTERFACE SPECIALIZED 28PLCC |
на замовлення 310 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
2SA1689E-AA | onsemi |
Description: 2SA1689 - SMALL SIGNAL BIPOLAR TPackaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C Frequency - Transition: 70MHz Supplier Device Package: 3-NP Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 600 mW |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
2SA1435-AA | onsemi |
Description: TRANS NPN 25V 0.3A TO-220MLPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-220ML Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 600 mW |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SESD5481MUT5G | onsemi |
Description: TVS DIODE 5VWM 15VC 2X3DFNPackaging: Bulk Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 12pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.7V Voltage - Clamping (Max) @ Ipp: 15V Power Line Protection: No |
на замовлення 5925000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SESD9X5.0JT5G | onsemi |
Description: TVS DIODE SOD923 Packaging: Bulk Package / Case: SOD-923 Mounting Type: Surface Mount Supplier Device Package: SOD-923 |
на замовлення 184000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AFGHL75T65SQDT | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/106ns Switching Energy: 2.12mJ (on), 1.14mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 136 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 379128 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AFGHL75T65SQD | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 36 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 25ns/106ns Switching Energy: 1.86mJ (on), 1.13mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 136 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8868 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
AFGHL75T65SQ | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 25ns/106ns Switching Energy: 1.86mJ (on), 1.13mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 139 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 13653 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FGHL75T65MQD | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 36 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/176ns Switching Energy: 1.94mJ (on), 1.55mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 145 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W |
на замовлення 17920 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
CS5172GD8G | onsemi |
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC |
на замовлення 6138 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
CS5172ED8G | onsemi |
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC |
на замовлення 349 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
MPS5172RLRMG | onsemi |
Description: TRANS NPN 25V 0.1A TO-92 |
на замовлення 31152 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NCV214RSQT2G | onsemi |
Description: IC CURRENT SENSE 1 CIRCUIT SC88Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 40µA Slew Rate: 1V/µs Current - Input Bias: 39 µA Voltage - Input Offset: 1 µV Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Number of Circuits: 1 -3db Bandwidth: 60 kHz Voltage - Supply Span (Min): 2.2 V Voltage - Supply Span (Max): 26 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
NCV214RSQT2G | onsemi |
Description: IC CURRENT SENSE 1 CIRCUIT SC88Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 40µA Slew Rate: 1V/µs Current - Input Bias: 39 µA Voltage - Input Offset: 1 µV Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Part Status: Active Number of Circuits: 1 -3db Bandwidth: 60 kHz Voltage - Supply Span (Min): 2.2 V Voltage - Supply Span (Max): 26 V Qualification: AEC-Q100 |
на замовлення 8181 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| FSAM50SM60G | onsemi |
Description: MOTION-SPMTM (SMART POWER MODULEPackaging: Bulk Package / Case: 32-PowerDIP Module (1.370", 34.80mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 50 A Voltage: 600 V |
на замовлення 801 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
|
|
FSAM10SH60A | onsemi |
Description: SMART POWER MODULE 10A SPM32-AA |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SGH40N60UFDTU | onsemi |
Description: IGBT 600V 40A 160W TO3PPackaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 15ns/65ns Switching Energy: 160µJ (on), 200µJ (off) Test Condition: 300V, 20A, 10Ohm, 15V Gate Charge: 97 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 160 W |
на замовлення 204493 шт: термін постачання 21-31 дні (днів) |
|
| FW297-TL-2W |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
товару немає в наявності
В кошику
од. на суму грн.
| FW297-TL-2W |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| EFC4615R-TR |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 24V 6A EFCP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: EFCP1515-4CC-037
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Description: MOSFET N-CH 24V 6A EFCP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: EFCP1515-4CC-037
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 11.10 грн |
| CAS25160LI-G-DF |
Виробник: onsemi
Description: CAS25160 - 16KB SPI SER CMOS EEP
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: CAS25160 - 16KB SPI SER CMOS EEP
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 188900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 666+ | 35.88 грн |
| SVC251SPA-AC |
![]() |
Виробник: onsemi
Description: VARIABLE-CAPACITANCE DIODE
Packaging: Bulk
Package / Case: 2-SIP
Mounting Type: Through Hole
Diode Type: Single
Operating Temperature: 100°C (TJ)
Voltage - Peak Reverse (Max): 12 V
Capacitance Ratio: 1.7
Capacitance @ Vr, F: 38pF @ 1.6V, 1MHz
Capacitance Ratio Condition: C1.6/C5
Supplier Device Package: 2-SPA
Description: VARIABLE-CAPACITANCE DIODE
Packaging: Bulk
Package / Case: 2-SIP
Mounting Type: Through Hole
Diode Type: Single
Operating Temperature: 100°C (TJ)
Voltage - Peak Reverse (Max): 12 V
Capacitance Ratio: 1.7
Capacitance @ Vr, F: 38pF @ 1.6V, 1MHz
Capacitance Ratio Condition: C1.6/C5
Supplier Device Package: 2-SPA
на замовлення 233571 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2959+ | 7.86 грн |
| SVC233-TB-E-ON |
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 683+ | 34.56 грн |
| MM74HCT573MTCX |
![]() |
Виробник: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| MM74HCT573MTCX |
![]() |
Виробник: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
на замовлення 2344 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.28 грн |
| 12+ | 29.77 грн |
| 25+ | 26.67 грн |
| 100+ | 21.84 грн |
| 250+ | 20.31 грн |
| 500+ | 19.40 грн |
| 1000+ | 18.65 грн |
| FDT3612-SN00151 |
Виробник: onsemi
Description: MOSFET N-CH 100V SOT223
Description: MOSFET N-CH 100V SOT223
товару немає в наявності
В кошику
од. на суму грн.
| LV8081GQ-TE-L-E |
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 902+ | 28.10 грн |
| LV56081GP-TE-L-E |
Виробник: onsemi
Description: IC REG CHG PUMP -5.5V DL 24VCT
Packaging: Bulk
Package / Case: 24-WFQFN
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Ratiometric
Current - Output: 20mA
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive and Negative
Frequency - Switching: 2MHz
Voltage - Input (Max): 3.45V
Topology: Charge Pump
Supplier Device Package: 24-VCT (3.5x3.5)
Synchronous Rectifier: Yes
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): -5.5V, 15V
Description: IC REG CHG PUMP -5.5V DL 24VCT
Packaging: Bulk
Package / Case: 24-WFQFN
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Ratiometric
Current - Output: 20mA
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive and Negative
Frequency - Switching: 2MHz
Voltage - Input (Max): 3.45V
Topology: Charge Pump
Supplier Device Package: 24-VCT (3.5x3.5)
Synchronous Rectifier: Yes
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): -5.5V, 15V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 118+ | 203.32 грн |
| 2N5302G |
![]() |
Виробник: onsemi
Description: TRANS NPN 60V 30A TO204
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 W
Description: TRANS NPN 60V 30A TO204
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 W
на замовлення 1330 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 67+ | 366.37 грн |
| MMSZ5237ET1G |
![]() |
Виробник: onsemi
Description: DIODE ZENER 8.2V 500MW SOD123
Description: DIODE ZENER 8.2V 500MW SOD123
на замовлення 10263 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4199+ | 5.45 грн |
| SZMMSZ5245CT1G |
Виробник: onsemi
Description: ZENER DIODE 500 MW SOD-123
Description: ZENER DIODE 500 MW SOD-123
товару немає в наявності
В кошику
од. на суму грн.
| NVBLS1D7N08H |
![]() |
Виробник: onsemi
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVBLS1D7N08H |
![]() |
Виробник: onsemi
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1178 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 367.04 грн |
| 10+ | 235.93 грн |
| 100+ | 193.20 грн |
| 500+ | 177.80 грн |
| NTBLS1D7N08H |
![]() |
Виробник: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 196.50 грн |
| NTBLS1D7N08H |
![]() |
Виробник: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Description: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 479µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
на замовлення 5930 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 403.66 грн |
| 10+ | 326.38 грн |
| 100+ | 264.03 грн |
| 500+ | 220.25 грн |
| 1000+ | 188.59 грн |
| NVBLS1D1N08H |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 283.03 грн |
| NVBLS1D1N08H |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
на замовлення 6944 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 642.11 грн |
| 10+ | 422.41 грн |
| 100+ | 333.60 грн |
| NTBLS1D5N08MC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 286.57 грн |
| NTBLS1D5N08MC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
на замовлення 13400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 648.07 грн |
| 10+ | 426.68 грн |
| 100+ | 337.77 грн |
| FDBL86062-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 282.49 грн |
| FDBL86062-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
на замовлення 3796 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 531.40 грн |
| 10+ | 438.65 грн |
| 100+ | 365.57 грн |
| 500+ | 302.71 грн |
| 1000+ | 272.44 грн |
| FDBL0200N100 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 283.23 грн |
| FDBL0200N100 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
Description: MOSFET N-CH 100V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
на замовлення 4068 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 499.04 грн |
| 10+ | 371.40 грн |
| 100+ | 333.83 грн |
| FDBL86063-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 267.57 грн |
| FDBL86063-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
на замовлення 3965 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 608.04 грн |
| 10+ | 397.65 грн |
| 100+ | 291.58 грн |
| 500+ | 241.80 грн |
| NTBL095N65S3H |
![]() |
Виробник: onsemi
Description: SUPERFET3 FAST 95MOHM TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
Description: SUPERFET3 FAST 95MOHM TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| NCP4304AMNTWG |
![]() |
Виробник: onsemi
Description: IC SEC SIDE SYNC RECT DRV 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9.5V ~ 30V
Applications: Secondary-Side Controller
Supplier Device Package: 8-DFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC SEC SIDE SYNC RECT DRV 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9.5V ~ 30V
Applications: Secondary-Side Controller
Supplier Device Package: 8-DFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 126.89 грн |
| 10+ | 109.64 грн |
| 25+ | 103.36 грн |
| 100+ | 82.65 грн |
| 250+ | 77.61 грн |
| 500+ | 67.91 грн |
| NCP2817BFCCT2G |
![]() |
Виробник: onsemi
Description: IC AMP AB STEREO 42MW 12FLIPCHIP
Packaging: Cut Tape (CT)
Features: Depop
Package / Case: 12-UFBGA, FCBGA
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Max Output Power x Channels @ Load: 42mW x 2 @ 16Ohm
Supplier Device Package: 12-FlipChip (1.62x1.22)
Part Status: Not For New Designs
Description: IC AMP AB STEREO 42MW 12FLIPCHIP
Packaging: Cut Tape (CT)
Features: Depop
Package / Case: 12-UFBGA, FCBGA
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Max Output Power x Channels @ Load: 42mW x 2 @ 16Ohm
Supplier Device Package: 12-FlipChip (1.62x1.22)
Part Status: Not For New Designs
на замовлення 2924 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 67.28 грн |
| 10+ | 57.40 грн |
| 25+ | 53.86 грн |
| 100+ | 41.26 грн |
| 250+ | 38.32 грн |
| 500+ | 32.61 грн |
| 1000+ | 25.66 грн |
| MC10H175FN |
![]() |
Виробник: onsemi
Description: IC DTYPE LATCH QUINT 20PLCC
Description: IC DTYPE LATCH QUINT 20PLCC
на замовлення 2530 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 104+ | 224.27 грн |
| MC10H130FNG |
![]() |
Виробник: onsemi
Description: IC S-R LATCH DUAL 20PLCC
Description: IC S-R LATCH DUAL 20PLCC
на замовлення 3063 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 77+ | 302.37 грн |
| MC10H130FNR2 |
![]() |
Виробник: onsemi
Description: IC S-R LATCH DUAL 20PLCC
Description: IC S-R LATCH DUAL 20PLCC
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 77+ | 302.37 грн |
| MC10H175FNR2 |
![]() |
Виробник: onsemi
Description: IC DTYPE LATCH QUINT 20PLCC
Description: IC DTYPE LATCH QUINT 20PLCC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 104+ | 224.27 грн |
| NCV4276CDTADJT5G |
![]() |
Виробник: onsemi
Description: IC REG LIN POS ADJ 400MA DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 400MA DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| NCV4276CDTADJT5G |
![]() |
Виробник: onsemi
Description: IC REG LIN POS ADJ 400MA DPAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 400MA DPAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: DPAK-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
на замовлення 1426 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.34 грн |
| 10+ | 70.94 грн |
| 25+ | 64.33 грн |
| 100+ | 53.49 грн |
| 250+ | 50.22 грн |
| 500+ | 48.26 грн |
| 1000+ | 45.87 грн |
| MC10E446FNG |
![]() |
Виробник: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
на замовлення 111 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 51+ | 458.59 грн |
| MC10E446FNR2 |
![]() |
Виробник: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
на замовлення 940 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 82+ | 283.81 грн |
| MC10E446FNR2G |
![]() |
Виробник: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
на замовлення 7630 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 51+ | 458.59 грн |
| MC100E446FN |
![]() |
Виробник: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
на замовлення 1715 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 82+ | 283.81 грн |
| MC100E446FNR2G |
![]() |
Виробник: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
на замовлення 3221 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 51+ | 458.59 грн |
| MC100E446FNG |
![]() |
Виробник: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
на замовлення 2479 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 51+ | 458.59 грн |
| MC10E446FN |
![]() |
Виробник: onsemi
Description: IC INTERFACE SPECIALIZED 28PLCC
Description: IC INTERFACE SPECIALIZED 28PLCC
на замовлення 310 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 82+ | 283.81 грн |
| 2SA1689E-AA |
![]() |
Виробник: onsemi
Description: 2SA1689 - SMALL SIGNAL BIPOLAR T
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C
Frequency - Transition: 70MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 600 mW
Description: 2SA1689 - SMALL SIGNAL BIPOLAR T
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C
Frequency - Transition: 70MHz
Supplier Device Package: 3-NP
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 600 mW
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1268+ | 18.80 грн |
| 2SA1435-AA |
![]() |
Виробник: onsemi
Description: TRANS NPN 25V 0.3A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 600 mW
Description: TRANS NPN 25V 0.3A TO-220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 600 mW
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1069+ | 20.59 грн |
| SESD5481MUT5G |
![]() |
Виробник: onsemi
Description: TVS DIODE 5VWM 15VC 2X3DFN
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Description: TVS DIODE 5VWM 15VC 2X3DFN
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.7V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
на замовлення 5925000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6985+ | 3.17 грн |
| SESD9X5.0JT5G |
Виробник: onsemi
Description: TVS DIODE SOD923
Packaging: Bulk
Package / Case: SOD-923
Mounting Type: Surface Mount
Supplier Device Package: SOD-923
Description: TVS DIODE SOD923
Packaging: Bulk
Package / Case: SOD-923
Mounting Type: Surface Mount
Supplier Device Package: SOD-923
на замовлення 184000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3742+ | 5.97 грн |
| AFGHL75T65SQDT |
![]() |
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/106ns
Switching Energy: 2.12mJ (on), 1.14mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 136 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/106ns
Switching Energy: 2.12mJ (on), 1.14mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 136 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 379128 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 550.98 грн |
| 30+ | 307.06 грн |
| 120+ | 257.87 грн |
| 510+ | 210.28 грн |
| AFGHL75T65SQD |
![]() |
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/106ns
Switching Energy: 1.86mJ (on), 1.13mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 136 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/106ns
Switching Energy: 1.86mJ (on), 1.13mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 136 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8868 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 576.53 грн |
| 30+ | 322.31 грн |
| 120+ | 271.14 грн |
| 510+ | 223.13 грн |
| AFGHL75T65SQ |
![]() |
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/106ns
Switching Energy: 1.86mJ (on), 1.13mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 139 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/106ns
Switching Energy: 1.86mJ (on), 1.13mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 139 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13653 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 472.64 грн |
| 30+ | 259.90 грн |
| 120+ | 216.98 грн |
| 510+ | 174.10 грн |
| 1020+ | 171.31 грн |
| FGHL75T65MQD |
![]() |
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/176ns
Switching Energy: 1.94mJ (on), 1.55mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/176ns
Switching Energy: 1.94mJ (on), 1.55mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
на замовлення 17920 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 527.14 грн |
| 10+ | 343.52 грн |
| 450+ | 213.12 грн |
| 900+ | 198.14 грн |
| CS5172GD8G |
![]() |
Виробник: onsemi
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC
на замовлення 6138 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 321+ | 73.97 грн |
| CS5172ED8G |
![]() |
Виробник: onsemi
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC
Description: IC REG MULT CONFG ADJ 1.5A 8SOIC
на замовлення 349 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 349+ | 75.55 грн |
| MPS5172RLRMG |
![]() |
Виробник: onsemi
Description: TRANS NPN 25V 0.1A TO-92
Description: TRANS NPN 25V 0.1A TO-92
на замовлення 31152 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9616+ | 2.36 грн |
| NCV214RSQT2G |
![]() |
Виробник: onsemi
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 40µA
Slew Rate: 1V/µs
Current - Input Bias: 39 µA
Voltage - Input Offset: 1 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 60 kHz
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 26 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 40µA
Slew Rate: 1V/µs
Current - Input Bias: 39 µA
Voltage - Input Offset: 1 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 60 kHz
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 26 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 30.21 грн |
| 6000+ | 28.39 грн |
| NCV214RSQT2G |
![]() |
Виробник: onsemi
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 40µA
Slew Rate: 1V/µs
Current - Input Bias: 39 µA
Voltage - Input Offset: 1 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 60 kHz
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 26 V
Qualification: AEC-Q100
Description: IC CURRENT SENSE 1 CIRCUIT SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 40µA
Slew Rate: 1V/µs
Current - Input Bias: 39 µA
Voltage - Input Offset: 1 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 60 kHz
Voltage - Supply Span (Min): 2.2 V
Voltage - Supply Span (Max): 26 V
Qualification: AEC-Q100
на замовлення 8181 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 64.72 грн |
| 10+ | 44.69 грн |
| 25+ | 40.28 грн |
| 100+ | 33.22 грн |
| 250+ | 31.04 грн |
| 500+ | 29.72 грн |
| 1000+ | 28.17 грн |
| FSAM50SM60G |
![]() |
Виробник: onsemi
Description: MOTION-SPMTM (SMART POWER MODULE
Packaging: Bulk
Package / Case: 32-PowerDIP Module (1.370", 34.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 50 A
Voltage: 600 V
Description: MOTION-SPMTM (SMART POWER MODULE
Packaging: Bulk
Package / Case: 32-PowerDIP Module (1.370", 34.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 50 A
Voltage: 600 V
на замовлення 801 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 4133.23 грн |
| FSAM10SH60A |
![]() |
Виробник: onsemi
Description: SMART POWER MODULE 10A SPM32-AA
Description: SMART POWER MODULE 10A SPM32-AA
на замовлення 14 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 5207.24 грн |
| SGH40N60UFDTU |
![]() |
Виробник: onsemi
Description: IGBT 600V 40A 160W TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Description: IGBT 600V 40A 160W TO3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
на замовлення 204493 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 114+ | 190.67 грн |















.jpg)






