Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102203) > Сторінка 1704 з 1704
| Фото | Назва | Виробник | Інформація |
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Ціна |
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SP8M8FRATB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-4.5A; Idm: 18÷24A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 6/-4.5A Pulsed drain current: 18...24A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 47/90mΩ Mounting: SMD Gate charge: 7.2/8.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTA114EETL | ROHM SEMICONDUCTOR |
 Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 30 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DTA114EEBHZGTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC89 Current gain: 30 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| DTA114EEBTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC89 Current gain: 30 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| DTA114EEFRATL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Current gain: 30 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BR24H16ANUX-5ACTR | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 1MHz; serial Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of package: reel; tape Kind of interface: serial Mounting: SMD Case: VSON008X2030 Operating temperature: -40...125°C Access time: 3.5ms Supply voltage: 1.7...5.5V DC Memory: 16kb EEPROM Memory organisation: 2kx8bit Clock frequency: 1MHz Interface: 2-wire; I2C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BR24H32ANUX-5ACTR | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; 2-wire,I2C; 4kx8bit; 1MHz; serial Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of package: reel; tape Kind of interface: serial Mounting: SMD Case: VSON08AX2030 Operating temperature: -40...125°C Access time: 3.5ms Supply voltage: 1.7...5.5V DC Memory: 32kb EEPROM Memory organisation: 4kx8bit Clock frequency: 1MHz Interface: 2-wire; I2C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RF302LAM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SOD128; Ufmax: 0.92V Semiconductor structure: single diode Case: SOD128 Mounting: SMD Type of diode: rectifying Kind of package: reel; tape Reverse recovery time: 25ns Max. forward voltage: 0.92V Load current: 3A Max. forward impulse current: 20A Max. off-state voltage: 200V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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KDZVTR8.2B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 8.2V Kind of package: reel; tape Case: SOD123F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 20µA |
на замовлення 1791 шт: термін постачання 21-30 дні (днів) |
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| RCX220N25 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 61W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 22A Pulsed drain current: 88A Power dissipation: 61W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RCJ220N25TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 166W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 22A Pulsed drain current: 88A Power dissipation: 166W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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KDZVTR11B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 11V; SMD; reel,tape; SOD123F; single diode; 10uA Case: SOD123F Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Leakage current: 10µA Power dissipation: 1W Tolerance: ±2% Zener voltage: 11V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KDZLVTFTR110 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 110V; SMD; reel,tape; SOD123F; single diode; 5uA Case: SOD123F Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Leakage current: 5µA Power dissipation: 1W Zener voltage: 110V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTA123JMT2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SOT723 Collector current: 0.1A Power dissipation: 0.15W Current gain: 80 Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
на замовлення 980 шт: термін постачання 21-30 дні (днів) |
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DTA123JKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC59; SOT346 Collector current: 0.1A Power dissipation: 0.2W Current gain: 80 Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTA123YKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC59; SOT346 Collector current: 0.1A Power dissipation: 0.2W Current gain: 33 Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DTA123EETL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC75A; SOT416 Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DTA123EKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 20 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DTA123JEFRATL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC75A; SOT416 Collector current: 0.1A Power dissipation: 0.15W Current gain: 80 Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RQ5E035BNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 12A; 1W; TSMT3 Case: TSMT3 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Gate charge: 6nC On-state resistance: 56mΩ Power dissipation: 1W Drain current: 2.5A Pulsed drain current: 12A Gate-source voltage: ±20V Drain-source voltage: 30V Polarisation: unipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BU7275HFV-TR | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; Ch: 1; 1.8÷5.5VDC; HVSOF5; 6mV; Iio: 1pA Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: operational amplifier Case: HVSOF5 Mounting: SMT Integrated circuit features: rail-to-rail Number of channels: single; 1 Input bias current: 1pA Input offset current: 1pA Input offset voltage: 6mV Slew rate: 0.3V/μs Voltage supply range: 1.8...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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RN739FT106 | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 50V; 50mA; 100mW; SC70,SOT323; double series Mounting: SMD Load current: 50mA Power dissipation: 0.1W Max. forward voltage: 1V Max. off-state voltage: 50V Semiconductor structure: double series Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SC70; SOT323 Type of diode: switching Capacitance: 0.4pF Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BD2232G-GTR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; high-side,USB switch; 1.3A; Ch: 1; N-Channel; SMD Number of channels: 1 Output current: 1.3A Supply voltage: 2.7...5.5V DC Mounting: SMD Active logical level: high Kind of integrated circuit: high-side; USB switch Kind of output: N-Channel Type of integrated circuit: power switch Kind of package: reel; tape Case: SSOP5 On-state resistance: 0.1Ω |
товару немає в наявності |
В кошику од. на суму грн. |
| SP8M8FRATB |
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-4.5A; Idm: 18÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-4.5A
Pulsed drain current: 18...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 47/90mΩ
Mounting: SMD
Gate charge: 7.2/8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-4.5A; Idm: 18÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-4.5A
Pulsed drain current: 18...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 47/90mΩ
Mounting: SMD
Gate charge: 7.2/8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DTA114EETL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
| DTA114EEBHZGTL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
| DTA114EEBTL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
| DTA114EEFRATL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
товару немає в наявності
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| BR24H16ANUX-5ACTR |
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 1MHz; serial
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Case: VSON008X2030
Operating temperature: -40...125°C
Access time: 3.5ms
Supply voltage: 1.7...5.5V DC
Memory: 16kb EEPROM
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Interface: 2-wire; I2C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; 2-wire,I2C; 2kx8bit; 1MHz; serial
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Case: VSON008X2030
Operating temperature: -40...125°C
Access time: 3.5ms
Supply voltage: 1.7...5.5V DC
Memory: 16kb EEPROM
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Interface: 2-wire; I2C
товару немає в наявності
В кошику
од. на суму грн.
| BR24H32ANUX-5ACTR |
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; 2-wire,I2C; 4kx8bit; 1MHz; serial
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Case: VSON08AX2030
Operating temperature: -40...125°C
Access time: 3.5ms
Supply voltage: 1.7...5.5V DC
Memory: 32kb EEPROM
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Interface: 2-wire; I2C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; 2-wire,I2C; 4kx8bit; 1MHz; serial
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Case: VSON08AX2030
Operating temperature: -40...125°C
Access time: 3.5ms
Supply voltage: 1.7...5.5V DC
Memory: 32kb EEPROM
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Interface: 2-wire; I2C
товару немає в наявності
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| RF302LAM2STR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SOD128; Ufmax: 0.92V
Semiconductor structure: single diode
Case: SOD128
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Reverse recovery time: 25ns
Max. forward voltage: 0.92V
Load current: 3A
Max. forward impulse current: 20A
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; SOD128; Ufmax: 0.92V
Semiconductor structure: single diode
Case: SOD128
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Reverse recovery time: 25ns
Max. forward voltage: 0.92V
Load current: 3A
Max. forward impulse current: 20A
Max. off-state voltage: 200V
товару немає в наявності
В кошику
од. на суму грн.
| KDZVTR8.2B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 20µA
на замовлення 1791 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.26 грн |
| 22+ | 18.92 грн |
| 25+ | 16.74 грн |
| 100+ | 10.84 грн |
| 500+ | 8.09 грн |
| 1000+ | 7.20 грн |
| RCX220N25 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 61W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 61W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 61W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 61W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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| RCJ220N25TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 166W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 166W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 166W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 166W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
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| KDZVTR11B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 11V; SMD; reel,tape; SOD123F; single diode; 10uA
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 10µA
Power dissipation: 1W
Tolerance: ±2%
Zener voltage: 11V
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 11V; SMD; reel,tape; SOD123F; single diode; 10uA
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 10µA
Power dissipation: 1W
Tolerance: ±2%
Zener voltage: 11V
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| KDZLVTFTR110 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 110V; SMD; reel,tape; SOD123F; single diode; 5uA
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 5µA
Power dissipation: 1W
Zener voltage: 110V
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 110V; SMD; reel,tape; SOD123F; single diode; 5uA
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 5µA
Power dissipation: 1W
Zener voltage: 110V
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| DTA123JMT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.84 грн |
| 97+ | 4.21 грн |
| 132+ | 3.08 грн |
| 500+ | 2.60 грн |
| DTA123JKAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59; SOT346
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 80
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59; SOT346
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 80
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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| DTA123YKAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59; SOT346
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59; SOT346
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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| DTA123EETL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75A; SOT416
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75A; SOT416
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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| DTA123EKAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
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| DTA123JEFRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75A; SOT416
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75A; SOT416
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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| RQ5E035BNTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 12A; 1W; TSMT3
Case: TSMT3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 6nC
On-state resistance: 56mΩ
Power dissipation: 1W
Drain current: 2.5A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 12A; 1W; TSMT3
Case: TSMT3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 6nC
On-state resistance: 56mΩ
Power dissipation: 1W
Drain current: 2.5A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of package: reel; tape
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| BU7275HFV-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; 1.8÷5.5VDC; HVSOF5; 6mV; Iio: 1pA
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Case: HVSOF5
Mounting: SMT
Integrated circuit features: rail-to-rail
Number of channels: single; 1
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 6mV
Slew rate: 0.3V/μs
Voltage supply range: 1.8...5.5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; 1.8÷5.5VDC; HVSOF5; 6mV; Iio: 1pA
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Case: HVSOF5
Mounting: SMT
Integrated circuit features: rail-to-rail
Number of channels: single; 1
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 6mV
Slew rate: 0.3V/μs
Voltage supply range: 1.8...5.5V DC
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| RN739FT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; 100mW; SC70,SOT323; double series
Mounting: SMD
Load current: 50mA
Power dissipation: 0.1W
Max. forward voltage: 1V
Max. off-state voltage: 50V
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC70; SOT323
Type of diode: switching
Capacitance: 0.4pF
Leakage current: 0.1µA
Category: Diodes - others
Description: Diode: switching; 50V; 50mA; 100mW; SC70,SOT323; double series
Mounting: SMD
Load current: 50mA
Power dissipation: 0.1W
Max. forward voltage: 1V
Max. off-state voltage: 50V
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC70; SOT323
Type of diode: switching
Capacitance: 0.4pF
Leakage current: 0.1µA
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| BD2232G-GTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.3A; Ch: 1; N-Channel; SMD
Number of channels: 1
Output current: 1.3A
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SSOP5
On-state resistance: 0.1Ω
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 1.3A; Ch: 1; N-Channel; SMD
Number of channels: 1
Output current: 1.3A
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Active logical level: high
Kind of integrated circuit: high-side; USB switch
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: SSOP5
On-state resistance: 0.1Ω
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