Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102536) > Сторінка 1705 з 1709
Фото | Назва | Виробник | Інформація |
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KDZVTR5.6B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.6V Kind of package: reel; tape Case: SOD123F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 20µA |
на замовлення 2620 шт: термін постачання 21-30 дні (днів) |
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EDZVT2R5.6B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 150mW; 5.6V; SMD; reel,tape; SC79,SOD523F; 1uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 5.6V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523F Semiconductor structure: single diode Leakage current: 1µA Tolerance: ±2% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
QDZT18R5.6 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 200mW; 5.6V; SMD; reel,tape; DSN1006-2,SOD882; 500nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.6V Mounting: SMD Kind of package: reel; tape Case: DSN1006-2; SOD882 Semiconductor structure: single diode Leakage current: 0.5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PDZVTR5.6B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD128; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.6V Mounting: SMD Kind of package: reel; tape Case: SOD128 Semiconductor structure: single diode Leakage current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
TDZVTR5.6 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 500mW; 5.6V; SMD; reel,tape; SOD323HE; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Kind of package: reel; tape Case: SOD323HE Semiconductor structure: single diode Leakage current: 10µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KDZVTFTR5.6B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.6V Mounting: SMD Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
PDZVTFTR5.6B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD128; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 5.6V Mounting: SMD Kind of package: reel; tape Case: SOD128 Semiconductor structure: single diode Leakage current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
YFZVFHTR5.6B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 500mW; 5.6V; SMD; reel,tape; SOD323HE; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Kind of package: reel; tape Case: SOD323HE Semiconductor structure: single diode Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
EDZVFHT2R5.6B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 150mW; 5.6V; SMD; reel,tape; SC79,SOD523; 1uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 5.6V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
UDZVFHTE-175.6B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 200mW; 5.6V; SMD; reel,tape; SC90A,SOD323F; 1uA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.6V Kind of package: reel; tape Case: SC90A; SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BD45465G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Number of channels: 1 Manufacturer series: BD45 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Active logical level: low Kind of RESET output: open drain Integrated circuit features: Counter Timer Built-in Kind of package: reel; tape Threshold on-voltage: 4.6V Kind of integrated circuit: voltage detector Mounting: SMD Operating temperature: -40...105°C Case: SSOP5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SH8J62TB1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.5A; Idm: -18A; 2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.5A Pulsed drain current: -18A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 84mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SH8J65TB1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET x2; unipolar; -30V; -7A; Idm: -28A; 2W; SO8; ESD Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -28A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40.8mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SH8J66TB1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET x2; unipolar; -30V; -9A; Idm: -36A; 2W; SO8; ESD Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -9A Pulsed drain current: -36A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 24.7mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
2SB1705TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 12V; 3A; 500mW; SC96 Case: SC96 Frequency: 280MHz Collector-emitter voltage: 12V Current gain: 270...680 Collector current: 3A Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
2SB1706TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 30V; 2A; 500mW; SC96 Case: SC96 Frequency: 280MHz Collector-emitter voltage: 30V Current gain: 270...680 Collector current: 2A Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
2SB1707TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 12V; 4A; 500mW; SC96 Case: SC96 Frequency: 250MHz Collector-emitter voltage: 12V Current gain: 270...680 Collector current: 4A Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
2SB1708TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 30V; 3A; 500mW; SC96 Case: SC96 Frequency: 200MHz Collector-emitter voltage: 30V Current gain: 270...680 Collector current: 3A Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
2SB1709TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 12V; 1.5A; 500mW; SC96 Case: SC96 Frequency: 400MHz Collector-emitter voltage: 12V Current gain: 270...680 Collector current: 1.5A Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2SD2114KT146V | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 20V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 820...1800 Mounting: SMD Kind of package: reel; tape Frequency: 350MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SD2114KT146W | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 20V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Pulsed collector current: 1A Current gain: 2700 Mounting: SMD Kind of package: reel; tape Frequency: 350MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BU4921F-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 2.1V Manufacturer series: BU49 Kind of integrated circuit: voltage detector Mounting: SMD Operating temperature: -40...125°C Case: SOP4 Supply voltage: 700mV DC...7V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BU4921FVE-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 2.1V Manufacturer series: BU49 Kind of integrated circuit: voltage detector Mounting: SMD Operating temperature: -40...125°C Case: VSOP5 Supply voltage: 700mV DC...7V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTC013ZMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 30 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SOT723 |
на замовлення 750 шт: термін постачання 21-30 дні (днів) |
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DTA013ZMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 30 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SOT723 |
на замовлення 975 шт: термін постачання 21-30 дні (днів) |
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DTC113ZKAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
на замовлення 1480 шт: термін постачання 21-30 дні (днів) |
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DTA113ZKAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTD113ZCT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SOT23 Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 82 Collector current: 0.5A Type of transistor: NPN Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTD113ZKT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SC59; SOT346 Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 82 Collector current: 0.5A Type of transistor: NPN Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTA113ZCAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTB113ZKT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ Current gain: 56 Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SC59; SOT346 Frequency: 200MHz Collector-emitter voltage: 50V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTA113ZCAT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SOT23 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 33 Collector current: 0.1A Type of transistor: PNP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTB113ZCT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Current gain: 56 Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SOT23 Frequency: 200MHz Collector-emitter voltage: 50V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTC113ZCAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTC043ZMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.15W Current gain: 80 Frequency: 250MHz |
на замовлення 3875 шт: термін постачання 21-30 дні (днів) |
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DTA023YMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Power dissipation: 0.15W Current gain: 35 Frequency: 250MHz |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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SCT3017ALGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 118A Pulsed drain current: 295A Power dissipation: 428W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 22.1mΩ Mounting: THT Gate charge: 172nC Kind of package: tube Kind of channel: enhancement Technology: SiC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SCT3017ALHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 118A Pulsed drain current: 295A Power dissipation: 428W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 22.1mΩ Mounting: THT Gate charge: 172nC Kind of package: tube Kind of channel: enhancement Technology: SiC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BD88400GUL-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC Type of integrated circuit: audio amplifier Output power: 80mW Integrated circuit features: headphone driver Mounting: SMD Supply voltage: 2.4...5.5V DC Number of channels: 2 Amplifier class: AB Case: VCSP50L2 Impedance: 16Ω Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BD88410GUL-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC Type of integrated circuit: audio amplifier Output power: 80mW Integrated circuit features: headphone driver Mounting: SMD Supply voltage: 2.4...5.5V DC Number of channels: 2 Amplifier class: AB Case: VCSP50L2 Impedance: 16Ω Kind of package: reel; tape Gain: 1V/V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BD88415GUL-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC Type of integrated circuit: audio amplifier Output power: 80mW Integrated circuit features: headphone driver Mounting: SMD Supply voltage: 2.4...5.5V DC Number of channels: 2 Amplifier class: AB Case: VCSP50L2 Impedance: 16Ω Kind of package: reel; tape Gain: 1.5V/V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BH3544F-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: audio amplifier; Pout: 62mW; headphone driver; 2.8÷6.5VDC Type of integrated circuit: audio amplifier Output power: 62mW Integrated circuit features: headphone driver Mounting: SMD Supply voltage: 2.8...6.5V DC Number of channels: 2 Amplifier class: AB Case: SOP8 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BR24G256NUX-5TR | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; serial Operating temperature: -40...85°C Case: VSON08AX2030 Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 1MHz Kind of package: reel; tape Kind of interface: serial Memory: 256kb EEPROM Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BR24G256F-3GTE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz; SOP8 Operating temperature: -40...85°C Case: SOP8 Supply voltage: 1.7...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 400kHz Kind of package: reel; tape Kind of interface: serial Memory: 256kb EEPROM Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BR24G256FJ-3AGTE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; SOP-J8 Operating temperature: -40...85°C Case: SOP-J8 Supply voltage: 1.7...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 1MHz Kind of package: reel; tape Kind of interface: serial Memory: 256kb EEPROM Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BR24G256FJ-3GTE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz Operating temperature: -40...85°C Case: SOP-J8 Supply voltage: 1.7...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 400kHz Kind of package: reel; tape Kind of interface: serial Memory: 256kb EEPROM Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BR24G256FJ-5E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; SOP-J8 Operating temperature: -40...85°C Case: SOP-J8 Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 1MHz Kind of package: reel; tape Kind of interface: serial Memory: 256kb EEPROM Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BR24G256FVT-3GE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz Operating temperature: -40...85°C Case: TSSOP-B8 Supply voltage: 1.7...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 400kHz Kind of package: reel; tape Kind of interface: serial Memory: 256kb EEPROM Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BR25G256FJ-3GE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 20MHz; SOP-J8 Operating temperature: -40...85°C Case: SOP-J8 Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 20MHz Kind of package: reel; tape Kind of interface: serial Memory: 256kb EEPROM Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BR25G256FVT-3GE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 20MHz; TSSOP-B8 Operating temperature: -40...85°C Case: TSSOP-B8 Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 32kx8bit Access time: 5ms Clock frequency: 20MHz Kind of package: reel; tape Kind of interface: serial Memory: 256kb EEPROM Mounting: SMD |
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В кошику од. на суму грн. | |||||||||||||||
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BA90BC0FP-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 9V; 1A; TO252-3; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 9V Output current: 1A Case: TO252-3 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...105°C Tolerance: ±2% Number of channels: 1 Input voltage: 3...16V |
на замовлення 1978 шт: термін постачання 21-30 дні (днів) |
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BA90DD0T | ROHM SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 9V; 2A; TO220FP; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 9V Output current: 2A Case: TO220FP Mounting: THT Kind of package: tube Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3...25V |
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В кошику од. на суму грн. | |||||||||||||||
BA90DD0WHFP-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 9V; 2A; HRP5; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.7V Output voltage: 9V Output current: 2A Case: HRP5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3...25V |
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В кошику од. на суму грн. | |||||||||||||||
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DA228UFHT106 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; SC70,SOT323; Ufmax: 1.2V; 200mW Mounting: SMD Power dissipation: 0.2W Kind of package: reel; tape Type of diode: switching Case: SC70; SOT323 Max. off-state voltage: 80V Max. load current: 0.2A Max. forward voltage: 1.2V Load current: 0.1A Semiconductor structure: double series Max. forward impulse current: 0.3A |
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В кошику од. на суму грн. | ||||||||||||||
BD45451G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Manufacturer series: BD45 Operating temperature: -40...105°C Mounting: SMD Case: SSOP5 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: Counter Timer Built-in Kind of package: reel; tape Threshold on-voltage: 4.5V Kind of integrated circuit: voltage detector |
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В кошику од. на суму грн. | |||||||||||||||
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SST4403T116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 40V; 0.6A; 200mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.2W Case: SOT23 Current gain: 20...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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В кошику од. на суму грн. | ||||||||||||||
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RB706D-40T146 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SC59,SOT346; SMD; 40V; 30mA; reel,tape Type of diode: Schottky rectifying Case: SC59; SOT346 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: double series Max. forward voltage: 0.37V Leakage current: 1µA Max. forward impulse current: 0.2A Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||
SCT2280KEGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 35A; 108W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 14A Pulsed drain current: 35A Power dissipation: 108W Case: TO247 Gate-source voltage: -6...22V On-state resistance: 364mΩ Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
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RHP030N03T100 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 10A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 6.5nC Kind of channel: enhancement Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||
RSR010N10FHATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 Mounting: SMD Gate charge: 3.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 4A Case: TSMT3 Drain-source voltage: 100V Drain current: 1A On-state resistance: 0.58Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
KDZVTR5.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 20µA
на замовлення 2620 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.24 грн |
23+ | 16.63 грн |
50+ | 13.08 грн |
100+ | 11.57 грн |
138+ | 6.43 грн |
380+ | 6.12 грн |
EDZVT2R5.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.6V; SMD; reel,tape; SC79,SOD523F; 1uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523F
Semiconductor structure: single diode
Leakage current: 1µA
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.6V; SMD; reel,tape; SC79,SOD523F; 1uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523F
Semiconductor structure: single diode
Leakage current: 1µA
Tolerance: ±2%
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В кошику
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QDZT18R5.6 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.6V; SMD; reel,tape; DSN1006-2,SOD882; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: DSN1006-2; SOD882
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.6V; SMD; reel,tape; DSN1006-2,SOD882; 500nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: DSN1006-2; SOD882
Semiconductor structure: single diode
Leakage current: 0.5µA
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PDZVTR5.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Leakage current: 20µA
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TDZVTR5.6 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.6V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
Leakage current: 10µA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.6V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
Leakage current: 10µA
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KDZVTFTR5.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
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PDZVTFTR5.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.6V; SMD; reel,tape; SOD128; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Leakage current: 20µA
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YFZVFHTR5.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.6V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.6V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
Leakage current: 5µA
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EDZVFHT2R5.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.6V; SMD; reel,tape; SC79,SOD523; 1uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.6V; SMD; reel,tape; SC79,SOD523; 1uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.6V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 1µA
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UDZVFHTE-175.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.6V; SMD; reel,tape; SC90A,SOD323F; 1uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.6V; SMD; reel,tape; SC90A,SOD323F; 1uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 1µA
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BD45465G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Number of channels: 1
Manufacturer series: BD45
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: Counter Timer Built-in
Kind of package: reel; tape
Threshold on-voltage: 4.6V
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Number of channels: 1
Manufacturer series: BD45
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: Counter Timer Built-in
Kind of package: reel; tape
Threshold on-voltage: 4.6V
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
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SH8J62TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.5A; Idm: -18A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.5A; Idm: -18A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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SH8J65TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7A; Idm: -28A; 2W; SO8; ESD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7A; Idm: -28A; 2W; SO8; ESD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 40.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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SH8J66TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -9A; Idm: -36A; 2W; SO8; ESD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -9A; Idm: -36A; 2W; SO8; ESD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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2SB1705TL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 3A; 500mW; SC96
Case: SC96
Frequency: 280MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 3A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 3A; 500mW; SC96
Case: SC96
Frequency: 280MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 3A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
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2SB1706TL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 500mW; SC96
Case: SC96
Frequency: 280MHz
Collector-emitter voltage: 30V
Current gain: 270...680
Collector current: 2A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 500mW; SC96
Case: SC96
Frequency: 280MHz
Collector-emitter voltage: 30V
Current gain: 270...680
Collector current: 2A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
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2SB1707TL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 4A; 500mW; SC96
Case: SC96
Frequency: 250MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 4A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 4A; 500mW; SC96
Case: SC96
Frequency: 250MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 4A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
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2SB1708TL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 500mW; SC96
Case: SC96
Frequency: 200MHz
Collector-emitter voltage: 30V
Current gain: 270...680
Collector current: 3A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 3A; 500mW; SC96
Case: SC96
Frequency: 200MHz
Collector-emitter voltage: 30V
Current gain: 270...680
Collector current: 3A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
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2SB1709TL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1.5A; 500mW; SC96
Case: SC96
Frequency: 400MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1.5A; 500mW; SC96
Case: SC96
Frequency: 400MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 1.5A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
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2SD2114KT146V |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 820...1800
Mounting: SMD
Kind of package: reel; tape
Frequency: 350MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 820...1800
Mounting: SMD
Kind of package: reel; tape
Frequency: 350MHz
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2SD2114KT146W |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Pulsed collector current: 1A
Current gain: 2700
Mounting: SMD
Kind of package: reel; tape
Frequency: 350MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Pulsed collector current: 1A
Current gain: 2700
Mounting: SMD
Kind of package: reel; tape
Frequency: 350MHz
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BU4921F-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.1V
Manufacturer series: BU49
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...125°C
Case: SOP4
Supply voltage: 700mV DC...7V DC
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.1V
Manufacturer series: BU49
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...125°C
Case: SOP4
Supply voltage: 700mV DC...7V DC
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BU4921FVE-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.1V
Manufacturer series: BU49
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...125°C
Case: VSOP5
Supply voltage: 700mV DC...7V DC
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.1V
Manufacturer series: BU49
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...125°C
Case: VSOP5
Supply voltage: 700mV DC...7V DC
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DTC013ZMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT723
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT723
на замовлення 750 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
62+ | 6.63 грн |
107+ | 3.55 грн |
146+ | 2.60 грн |
500+ | 2.18 грн |
567+ | 1.56 грн |
DTA013ZMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT723
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT723
на замовлення 975 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 6.98 грн |
103+ | 3.70 грн |
143+ | 2.65 грн |
500+ | 2.19 грн |
567+ | 1.56 грн |
DTC113ZKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
на замовлення 1480 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 14.65 грн |
45+ | 8.47 грн |
100+ | 5.22 грн |
355+ | 2.49 грн |
974+ | 2.36 грн |
DTA113ZKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
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DTD113ZCT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 82
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 82
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
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DTD113ZKT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SC59; SOT346
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 82
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SC59; SOT346
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 82
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
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DTA113ZCAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
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DTB113ZKT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Current gain: 56
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SC59; SOT346
Frequency: 200MHz
Collector-emitter voltage: 50V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Current gain: 56
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SC59; SOT346
Frequency: 200MHz
Collector-emitter voltage: 50V
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DTA113ZCAT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.1A
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.1A
Type of transistor: PNP
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DTB113ZCT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Current gain: 56
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 50V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Current gain: 56
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 50V
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DTC113ZCAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
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DTC043ZMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.15W
Current gain: 80
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.15W
Current gain: 80
Frequency: 250MHz
на замовлення 3875 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
66+ | 6.19 грн |
93+ | 4.08 грн |
117+ | 3.24 грн |
153+ | 2.47 грн |
500+ | 1.92 грн |
517+ | 1.71 грн |
1421+ | 1.62 грн |
DTA023YMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.15W
Current gain: 35
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.15W
Current gain: 35
Frequency: 250MHz
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
58+ | 7.13 грн |
99+ | 3.86 грн |
140+ | 2.71 грн |
500+ | 2.22 грн |
525+ | 1.69 грн |
SCT3017ALGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Pulsed drain current: 295A
Power dissipation: 428W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 22.1mΩ
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Pulsed drain current: 295A
Power dissipation: 428W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 22.1mΩ
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
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SCT3017ALHRC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Pulsed drain current: 295A
Power dissipation: 428W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 22.1mΩ
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Pulsed drain current: 295A
Power dissipation: 428W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 22.1mΩ
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
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BD88400GUL-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Output power: 80mW
Integrated circuit features: headphone driver
Mounting: SMD
Supply voltage: 2.4...5.5V DC
Number of channels: 2
Amplifier class: AB
Case: VCSP50L2
Impedance: 16Ω
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Output power: 80mW
Integrated circuit features: headphone driver
Mounting: SMD
Supply voltage: 2.4...5.5V DC
Number of channels: 2
Amplifier class: AB
Case: VCSP50L2
Impedance: 16Ω
Kind of package: reel; tape
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BD88410GUL-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Output power: 80mW
Integrated circuit features: headphone driver
Mounting: SMD
Supply voltage: 2.4...5.5V DC
Number of channels: 2
Amplifier class: AB
Case: VCSP50L2
Impedance: 16Ω
Kind of package: reel; tape
Gain: 1V/V
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Output power: 80mW
Integrated circuit features: headphone driver
Mounting: SMD
Supply voltage: 2.4...5.5V DC
Number of channels: 2
Amplifier class: AB
Case: VCSP50L2
Impedance: 16Ω
Kind of package: reel; tape
Gain: 1V/V
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BD88415GUL-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Output power: 80mW
Integrated circuit features: headphone driver
Mounting: SMD
Supply voltage: 2.4...5.5V DC
Number of channels: 2
Amplifier class: AB
Case: VCSP50L2
Impedance: 16Ω
Kind of package: reel; tape
Gain: 1.5V/V
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Output power: 80mW
Integrated circuit features: headphone driver
Mounting: SMD
Supply voltage: 2.4...5.5V DC
Number of channels: 2
Amplifier class: AB
Case: VCSP50L2
Impedance: 16Ω
Kind of package: reel; tape
Gain: 1.5V/V
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BH3544F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 62mW; headphone driver; 2.8÷6.5VDC
Type of integrated circuit: audio amplifier
Output power: 62mW
Integrated circuit features: headphone driver
Mounting: SMD
Supply voltage: 2.8...6.5V DC
Number of channels: 2
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 62mW; headphone driver; 2.8÷6.5VDC
Type of integrated circuit: audio amplifier
Output power: 62mW
Integrated circuit features: headphone driver
Mounting: SMD
Supply voltage: 2.8...6.5V DC
Number of channels: 2
Amplifier class: AB
Case: SOP8
Kind of package: reel; tape
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BR24G256NUX-5TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; serial
Operating temperature: -40...85°C
Case: VSON08AX2030
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; serial
Operating temperature: -40...85°C
Case: VSON08AX2030
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
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BR24G256F-3GTE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz; SOP8
Operating temperature: -40...85°C
Case: SOP8
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz; SOP8
Operating temperature: -40...85°C
Case: SOP8
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
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BR24G256FJ-3AGTE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; SOP-J8
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; SOP-J8
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
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BR24G256FJ-3GTE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
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BR24G256FJ-5E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; SOP-J8
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 1MHz; SOP-J8
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 1MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
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BR24G256FVT-3GE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz
Operating temperature: -40...85°C
Case: TSSOP-B8
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; 2-wire,I2C; 32kx8bit; 400kHz
Operating temperature: -40...85°C
Case: TSSOP-B8
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
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BR25G256FJ-3GE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 20MHz; SOP-J8
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 20MHz; SOP-J8
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
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BR25G256FVT-3GE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 20MHz; TSSOP-B8
Operating temperature: -40...85°C
Case: TSSOP-B8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 20MHz; TSSOP-B8
Operating temperature: -40...85°C
Case: TSSOP-B8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 32kx8bit
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 256kb EEPROM
Mounting: SMD
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BA90BC0FP-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 9V; 1A; TO252-3; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 9V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 9V; 1A; TO252-3; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 9V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
на замовлення 1978 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 105.01 грн |
10+ | 75.97 грн |
27+ | 33.56 грн |
73+ | 31.75 грн |
BA90DD0T |
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Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 9V; 2A; TO220FP; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 9V
Output current: 2A
Case: TO220FP
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...25V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 9V; 2A; TO220FP; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 9V
Output current: 2A
Case: TO220FP
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...25V
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BA90DD0WHFP-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 9V; 2A; HRP5; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 9V
Output current: 2A
Case: HRP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...25V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 9V; 2A; HRP5; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 9V
Output current: 2A
Case: HRP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...25V
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DA228UFHT106 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC70,SOT323; Ufmax: 1.2V; 200mW
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: switching
Case: SC70; SOT323
Max. off-state voltage: 80V
Max. load current: 0.2A
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: double series
Max. forward impulse current: 0.3A
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC70,SOT323; Ufmax: 1.2V; 200mW
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: switching
Case: SC70; SOT323
Max. off-state voltage: 80V
Max. load current: 0.2A
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: double series
Max. forward impulse current: 0.3A
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BD45451G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Manufacturer series: BD45
Operating temperature: -40...105°C
Mounting: SMD
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: Counter Timer Built-in
Kind of package: reel; tape
Threshold on-voltage: 4.5V
Kind of integrated circuit: voltage detector
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Manufacturer series: BD45
Operating temperature: -40...105°C
Mounting: SMD
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: Counter Timer Built-in
Kind of package: reel; tape
Threshold on-voltage: 4.5V
Kind of integrated circuit: voltage detector
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SST4403T116 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 200mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT23
Current gain: 20...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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RB706D-40T146 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59,SOT346; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SC59; SOT346
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: double series
Max. forward voltage: 0.37V
Leakage current: 1µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59,SOT346; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky rectifying
Case: SC59; SOT346
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: double series
Max. forward voltage: 0.37V
Leakage current: 1µA
Max. forward impulse current: 0.2A
Kind of package: reel; tape
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SCT2280KEGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 35A; 108W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 14A
Pulsed drain current: 35A
Power dissipation: 108W
Case: TO247
Gate-source voltage: -6...22V
On-state resistance: 364mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 35A; 108W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 14A
Pulsed drain current: 35A
Power dissipation: 108W
Case: TO247
Gate-source voltage: -6...22V
On-state resistance: 364mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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RHP030N03T100 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 10A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 10A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhancement
Kind of package: reel; tape
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RSR010N10FHATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Mounting: SMD
Gate charge: 3.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 4A
Case: TSMT3
Drain-source voltage: 100V
Drain current: 1A
On-state resistance: 0.58Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Mounting: SMD
Gate charge: 3.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 4A
Case: TSMT3
Drain-source voltage: 100V
Drain current: 1A
On-state resistance: 0.58Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
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