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IPB65R099CFD7AATMA1 IPB65R099CFD7AATMA1 Infineon Technologies Infineon_IPB65R099CFD7A_DataSheet_v02_01_EN-3362233.pdf MOSFET AUTOMOTIVE
на замовлення 626 шт:
термін постачання 21-30 дні (днів)
1+432.24 грн
10+ 357.93 грн
25+ 293.66 грн
100+ 251.99 грн
250+ 237.66 грн
500+ 224.64 грн
1000+ 190.13 грн
IPBE65R099CFD7AATMA1 IPBE65R099CFD7AATMA1 Infineon Technologies Infineon_IPBE65R099CFD7A_DataSheet_v02_02_EN-3362352.pdf MOSFET AUTOMOTIVE
на замовлення 989 шт:
термін постачання 21-30 дні (днів)
1+461.87 грн
10+ 383.39 грн
25+ 314.5 грн
100+ 269.57 грн
250+ 254.59 грн
500+ 240.27 грн
1000+ 203.15 грн
IPBE65R099CFD7AATMA1 IPBE65R099CFD7AATMA1 Infineon Technologies Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
на замовлення 1910 шт:
термін постачання 21-31 дні (днів)
86+229.59 грн
Мінімальне замовлення: 86
IPDQ65R099CFD7AXTMA1 Infineon Technologies Infineon_IPDQ65R099CFD7A_DataSheet_v02_01_EN-3324419.pdf MOSFET
на замовлення 480 шт:
термін постачання 21-30 дні (днів)
1+391.22 грн
10+ 323.48 грн
25+ 265.66 грн
100+ 227.9 грн
250+ 214.87 грн
500+ 203.15 грн
750+ 173.2 грн
IPDQ65R099CFD7AXTMA1 Infineon Technologies Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
1+359.92 грн
10+ 311.25 грн
25+ 294.28 грн
100+ 239.36 грн
250+ 227.08 грн
IPDQ65R099CFD7XTMA1 IPDQ65R099CFD7XTMA1 Infineon Technologies Infineon_IPDQ65R099CFD7_DataSheet_v02_00_EN-3159489.pdf MOSFET
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+372.99 грн
10+ 308.51 грн
25+ 253.29 грн
100+ 217.48 грн
250+ 205.11 грн
500+ 193.39 грн
750+ 164.74 грн
IPL65R099C7AUMA1 IPL65R099C7AUMA1 Infineon Technologies Infineon_IPL65R099C7_DS_v02_01_EN-1731749.pdf MOSFET HIGH POWER BEST IN CLASS
на замовлення 2330 шт:
термін постачання 21-30 дні (днів)
1+448.95 грн
10+ 372.15 грн
25+ 313.84 грн
100+ 261.75 грн
250+ 253.94 грн
500+ 232.45 грн
1000+ 199.25 грн
IPL65R099C7AUMA1 IPL65R099C7AUMA1 Infineon Technologies INFN-S-A0003614916-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 9332 шт:
термін постачання 21-31 дні (днів)
1+403.59 грн
10+ 326.65 грн
100+ 264.26 грн
500+ 220.45 грн
1000+ 188.76 грн
IPL65R099C7AUMA1 IPL65R099C7AUMA1 Infineon Technologies INFN-S-A0003614916-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+196.67 грн
Мінімальне замовлення: 3000
IPP65R099CFD7AAKSA1 IPP65R099CFD7AAKSA1 Infineon Technologies Infineon-IPP65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e9346d9680b Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
1+396.55 грн
IPP65R099CFD7AAKSA1 IPP65R099CFD7AAKSA1 Infineon Technologies Infineon_IPP65R099CFD7A_DataSheet_v02_01_EN-3362856.pdf MOSFET AUTOMOTIVE
на замовлення 568 шт:
термін постачання 21-30 дні (днів)
1+430.72 грн
10+ 356.43 грн
25+ 292.36 грн
100+ 251.34 грн
250+ 237.66 грн
500+ 222.69 грн
1000+ 179.71 грн
IPT65R099CFD7XTMA1 IPT65R099CFD7XTMA1 Infineon Technologies Infineon_IPT65R099CFD7_DataSheet_v02_01_EN-3159599.pdf MOSFET
на замовлення 59 шт:
термін постачання 21-30 дні (днів)
1+332.73 грн
10+ 274.81 грн
25+ 225.94 грн
100+ 194.04 грн
250+ 182.97 грн
500+ 171.9 грн
1000+ 156.92 грн
IPW65R099C6 IPW65R099C6 Infineon Technologies Infineon_IPW65R099C6_DS_v02_00_en-1731982.pdf MOSFET N-Ch 700V 38A TO247-3
на замовлення 189 шт:
термін постачання 21-30 дні (днів)
1+551.51 грн
10+ 465.75 грн
25+ 367.89 грн
100+ 337.29 грн
240+ 317.75 грн
480+ 298.22 грн
1200+ 268.27 грн
IPW65R099CFD7AXKSA1 IPW65R099CFD7AXKSA1 Infineon Technologies Infineon_IPW65R099CFD7A_DataSheet_v02_01_EN-3362685.pdf MOSFET AUTOMOTIVE
на замовлення 125 шт:
термін постачання 21-30 дні (днів)
1+494.53 грн
10+ 417.83 грн
25+ 329.47 грн
100+ 302.78 грн
240+ 284.54 грн
480+ 266.31 грн
1200+ 239.62 грн
IPW65R099CFD7AXKSA1 IPW65R099CFD7AXKSA1 Infineon Technologies Infineon-IPW65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f920171c028ca1d0912 Description: MOSFET N-CH 650V 24A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO247-3-41
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
на замовлення 194 шт:
термін постачання 21-31 дні (днів)
1+454.3 грн
30+ 349.67 грн
120+ 312.85 грн
IPA65R099C6XKSA1 IPA65R099C6XKSA1 Infineon Technologies ipa65r099c6.pdf Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
IPA65R099C6XKSA1 IPA65R099C6XKSA1 Infineon Technologies IPx65R099C6.pdf Description: MOSFET N-CH 650V 38A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3-111
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPB65R099C6ATMA1 IPB65R099C6ATMA1 INFINEON TECHNOLOGIES IPB65R099C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPB65R099C6ATMA1 IPB65R099C6ATMA1 INFINEON TECHNOLOGIES IPB65R099C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPB65R099C6ATMA1 IPB65R099C6ATMA1 Infineon Technologies IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019 Description: MOSFET N-CH 650V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPB65R099C6ATMA1 IPB65R099C6ATMA1 Infineon Technologies IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019 Description: MOSFET N-CH 650V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPB65R099C6ATMA1 IPB65R099C6ATMA1 Infineon Technologies ipa65r099c6.pdf Trans MOSFET N-CH 650V 38A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IPB65R099CFD7AATMA1 Infineon Technologies infineon-ipb65r099cfd7a-datasheet-v02_01-en.pdf N-Channel MOSFET Transistor
товар відсутній
IPB65R099CFD7AATMA1 IPB65R099CFD7AATMA1 Infineon Technologies Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805 Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товар відсутній
IPB65R099CFD7AATMA1 IPB65R099CFD7AATMA1 Infineon Technologies Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805 Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товар відсутній
IPBE65R099CFD7AATMA1 IPBE65R099CFD7AATMA1 Infineon Technologies Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товар відсутній
IPBE65R099CFD7AATMA1 IPBE65R099CFD7AATMA1 Infineon Technologies Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товар відсутній
IPBE65R099CFD7AATMA1 Infineon Technologies infineon-ipbe65r099cfd7a-datasheet-v02_02-en.pdf N-Channel MOSFET Transistor
товар відсутній
IPDQ65R099CFD7AXTMA1 Infineon Technologies Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
IPDQ65R099CFD7AXTMA1 Infineon Technologies AUTOMOTIVE_COOLMOS
товар відсутній
IPDQ65R099CFD7XTMA1 IPDQ65R099CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R099CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e408887d77d2 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
товар відсутній
IPDQ65R099CFD7XTMA1 Infineon Technologies infineon-ipdq65r099cfd7-datasheet-v02_00-en.pdf Trans MOSFET N-CH 700V 29A 22-Pin HDSOP EP T/R
товар відсутній
IPDQ65R099CFD7XTMA1 IPDQ65R099CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R099CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e408887d77d2 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Power Dissipation (Max): 186W (Tc)
товар відсутній
IPI65R099C6XKSA1 IPI65R099C6XKSA1 INFINEON TECHNOLOGIES IPI65R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
IPI65R099C6XKSA1 IPI65R099C6XKSA1 INFINEON TECHNOLOGIES IPI65R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPI65R099C6XKSA1 IPI65R099C6XKSA1 Infineon Technologies ipa65r099c6.pdf Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-262 Tube
товар відсутній
IPI65R099C6XKSA1 IPI65R099C6XKSA1 Infineon Technologies IPx65R099C6.pdf Description: MOSFET N-CH 650V 38A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPL65R099C7 IPL65R099C7 Infineon Technologies Infineon_IPL65R099C7_DS_v02_01_EN-1731749.pdf MOSFET HIGH POWER BEST IN CLASS
товар відсутній
IPL65R099C7AUMA1 IPL65R099C7AUMA1 INFINEON TECHNOLOGIES IPL65R099C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPL65R099C7AUMA1 IPL65R099C7AUMA1 INFINEON TECHNOLOGIES IPL65R099C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPL65R099C7AUMA1 IPL65R099C7AUMA1 Infineon Technologies 4992840301036662infineon-ipl65r099c7-ds-v02_00-en.pdffileid5546d46145da30e80145f0.pdf Trans MOSFET N-CH 650V 21A 4-Pin VSON EP T/R
товар відсутній
IPP65R099C6XKSA1 IPP65R099C6XKSA1 INFINEON TECHNOLOGIES IPP65R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP65R099C6XKSA1 IPP65R099C6XKSA1 INFINEON TECHNOLOGIES IPP65R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R099C6XKSA1 IPP65R099C6XKSA1 Infineon Technologies ipa65r099c6.pdf Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-220 Tube
товар відсутній
IPP65R099C6XKSA1 IPP65R099C6XKSA1 Infineon Technologies IPx65R099C6.pdf Description: MOSFET N-CH 650V 38A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPP65R099CFD7AAKSA1 Infineon Technologies infineon-ipp65r099cfd7a-datasheet-v02_01-en.pdf N-Channel MOSFET Transistor
товар відсутній
IPT65R099CFD7XTMA1 Infineon Technologies infineon-ipt65r099cfd7-datasheet-v02_01-en.pdf SP005537607
товар відсутній
IPT65R099CFD7XTMA1 IPT65R099CFD7XTMA1 Infineon Technologies Description: MOSFET N-CH 650V 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TOLL
Part Status: Active
Drain to Source Voltage (Vdss): 650 V
товар відсутній
IPT65R099CFD7XTMA1 IPT65R099CFD7XTMA1 Infineon Technologies Description: MOSFET N-CH 650V 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TOLL
Drain to Source Voltage (Vdss): 650 V
товар відсутній
IPW65R099C6FKSA1 IPW65R099C6FKSA1 Infineon Technologies ipa65r099c6.pdf Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
IPW65R099C6FKSA1 IPW65R099C6FKSA1 Infineon Technologies IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019 Description: MOSFET N-CH 650V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPW65R099C6FKSA1 IPW65R099C6FKSA1 Infineon Technologies Infineon_IPW65R099C6_DS_v02_00_en-1731982.pdf MOSFET N-Ch 700V 38A TO247-3
товар відсутній
IPW65R099CFD7AXKSA1 Infineon Technologies infineon-ipw65r099cfd7a-datasheet-v02_01-en.pdf N-Channel MOSFET Transistor
товар відсутній
IPB65R099CFD7AATMA1 Infineon_IPB65R099CFD7A_DataSheet_v02_01_EN-3362233.pdf
IPB65R099CFD7AATMA1
Виробник: Infineon Technologies
MOSFET AUTOMOTIVE
на замовлення 626 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+432.24 грн
10+ 357.93 грн
25+ 293.66 грн
100+ 251.99 грн
250+ 237.66 грн
500+ 224.64 грн
1000+ 190.13 грн
IPBE65R099CFD7AATMA1 Infineon_IPBE65R099CFD7A_DataSheet_v02_02_EN-3362352.pdf
IPBE65R099CFD7AATMA1
Виробник: Infineon Technologies
MOSFET AUTOMOTIVE
на замовлення 989 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+461.87 грн
10+ 383.39 грн
25+ 314.5 грн
100+ 269.57 грн
250+ 254.59 грн
500+ 240.27 грн
1000+ 203.15 грн
IPBE65R099CFD7AATMA1 Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d
IPBE65R099CFD7AATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
на замовлення 1910 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
86+229.59 грн
Мінімальне замовлення: 86
IPDQ65R099CFD7AXTMA1 Infineon_IPDQ65R099CFD7A_DataSheet_v02_01_EN-3324419.pdf
Виробник: Infineon Technologies
MOSFET
на замовлення 480 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+391.22 грн
10+ 323.48 грн
25+ 265.66 грн
100+ 227.9 грн
250+ 214.87 грн
500+ 203.15 грн
750+ 173.2 грн
IPDQ65R099CFD7AXTMA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+359.92 грн
10+ 311.25 грн
25+ 294.28 грн
100+ 239.36 грн
250+ 227.08 грн
IPDQ65R099CFD7XTMA1 Infineon_IPDQ65R099CFD7_DataSheet_v02_00_EN-3159489.pdf
IPDQ65R099CFD7XTMA1
Виробник: Infineon Technologies
MOSFET
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+372.99 грн
10+ 308.51 грн
25+ 253.29 грн
100+ 217.48 грн
250+ 205.11 грн
500+ 193.39 грн
750+ 164.74 грн
IPL65R099C7AUMA1 Infineon_IPL65R099C7_DS_v02_01_EN-1731749.pdf
IPL65R099C7AUMA1
Виробник: Infineon Technologies
MOSFET HIGH POWER BEST IN CLASS
на замовлення 2330 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+448.95 грн
10+ 372.15 грн
25+ 313.84 грн
100+ 261.75 грн
250+ 253.94 грн
500+ 232.45 грн
1000+ 199.25 грн
IPL65R099C7AUMA1 INFN-S-A0003614916-1.pdf?t.download=true&u=5oefqw
IPL65R099C7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 9332 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+403.59 грн
10+ 326.65 грн
100+ 264.26 грн
500+ 220.45 грн
1000+ 188.76 грн
IPL65R099C7AUMA1 INFN-S-A0003614916-1.pdf?t.download=true&u=5oefqw
IPL65R099C7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+196.67 грн
Мінімальне замовлення: 3000
IPP65R099CFD7AAKSA1 Infineon-IPP65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e9346d9680b
IPP65R099CFD7AAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+396.55 грн
IPP65R099CFD7AAKSA1 Infineon_IPP65R099CFD7A_DataSheet_v02_01_EN-3362856.pdf
IPP65R099CFD7AAKSA1
Виробник: Infineon Technologies
MOSFET AUTOMOTIVE
на замовлення 568 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+430.72 грн
10+ 356.43 грн
25+ 292.36 грн
100+ 251.34 грн
250+ 237.66 грн
500+ 222.69 грн
1000+ 179.71 грн
IPT65R099CFD7XTMA1 Infineon_IPT65R099CFD7_DataSheet_v02_01_EN-3159599.pdf
IPT65R099CFD7XTMA1
Виробник: Infineon Technologies
MOSFET
на замовлення 59 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+332.73 грн
10+ 274.81 грн
25+ 225.94 грн
100+ 194.04 грн
250+ 182.97 грн
500+ 171.9 грн
1000+ 156.92 грн
IPW65R099C6 Infineon_IPW65R099C6_DS_v02_00_en-1731982.pdf
IPW65R099C6
Виробник: Infineon Technologies
MOSFET N-Ch 700V 38A TO247-3
на замовлення 189 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+551.51 грн
10+ 465.75 грн
25+ 367.89 грн
100+ 337.29 грн
240+ 317.75 грн
480+ 298.22 грн
1200+ 268.27 грн
IPW65R099CFD7AXKSA1 Infineon_IPW65R099CFD7A_DataSheet_v02_01_EN-3362685.pdf
IPW65R099CFD7AXKSA1
Виробник: Infineon Technologies
MOSFET AUTOMOTIVE
на замовлення 125 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+494.53 грн
10+ 417.83 грн
25+ 329.47 грн
100+ 302.78 грн
240+ 284.54 грн
480+ 266.31 грн
1200+ 239.62 грн
IPW65R099CFD7AXKSA1 Infineon-IPW65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f920171c028ca1d0912
IPW65R099CFD7AXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO247-3-41
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
на замовлення 194 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+454.3 грн
30+ 349.67 грн
120+ 312.85 грн
IPA65R099C6XKSA1 ipa65r099c6.pdf
IPA65R099C6XKSA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
IPA65R099C6XKSA1 IPx65R099C6.pdf
IPA65R099C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 38A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3-111
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPB65R099C6ATMA1 IPB65R099C6-DTE.pdf
IPB65R099C6ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPB65R099C6ATMA1 IPB65R099C6-DTE.pdf
IPB65R099C6ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPB65R099C6ATMA1 IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019
IPB65R099C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPB65R099C6ATMA1 IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019
IPB65R099C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPB65R099C6ATMA1 ipa65r099c6.pdf
IPB65R099C6ATMA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 38A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IPB65R099CFD7AATMA1 infineon-ipb65r099cfd7a-datasheet-v02_01-en.pdf
Виробник: Infineon Technologies
N-Channel MOSFET Transistor
товар відсутній
IPB65R099CFD7AATMA1 Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805
IPB65R099CFD7AATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товар відсутній
IPB65R099CFD7AATMA1 Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805
IPB65R099CFD7AATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товар відсутній
IPBE65R099CFD7AATMA1 Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d
IPBE65R099CFD7AATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товар відсутній
IPBE65R099CFD7AATMA1 Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d
IPBE65R099CFD7AATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товар відсутній
IPBE65R099CFD7AATMA1 infineon-ipbe65r099cfd7a-datasheet-v02_02-en.pdf
Виробник: Infineon Technologies
N-Channel MOSFET Transistor
товар відсутній
IPDQ65R099CFD7AXTMA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
IPDQ65R099CFD7AXTMA1
Виробник: Infineon Technologies
AUTOMOTIVE_COOLMOS
товар відсутній
IPDQ65R099CFD7XTMA1 Infineon-IPDQ65R099CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e408887d77d2
IPDQ65R099CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
товар відсутній
IPDQ65R099CFD7XTMA1 infineon-ipdq65r099cfd7-datasheet-v02_00-en.pdf
Виробник: Infineon Technologies
Trans MOSFET N-CH 700V 29A 22-Pin HDSOP EP T/R
товар відсутній
IPDQ65R099CFD7XTMA1 Infineon-IPDQ65R099CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e408887d77d2
IPDQ65R099CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Power Dissipation (Max): 186W (Tc)
товар відсутній
IPI65R099C6XKSA1 IPI65R099C6-DTE.pdf
IPI65R099C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
IPI65R099C6XKSA1 IPI65R099C6-DTE.pdf
IPI65R099C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPI65R099C6XKSA1 ipa65r099c6.pdf
IPI65R099C6XKSA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-262 Tube
товар відсутній
IPI65R099C6XKSA1 IPx65R099C6.pdf
IPI65R099C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 38A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPL65R099C7 Infineon_IPL65R099C7_DS_v02_01_EN-1731749.pdf
IPL65R099C7
Виробник: Infineon Technologies
MOSFET HIGH POWER BEST IN CLASS
товар відсутній
IPL65R099C7AUMA1 IPL65R099C7-DTE.pdf
IPL65R099C7AUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPL65R099C7AUMA1 IPL65R099C7-DTE.pdf
IPL65R099C7AUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPL65R099C7AUMA1 4992840301036662infineon-ipl65r099c7-ds-v02_00-en.pdffileid5546d46145da30e80145f0.pdf
IPL65R099C7AUMA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 21A 4-Pin VSON EP T/R
товар відсутній
IPP65R099C6XKSA1 IPP65R099C6-DTE.pdf
IPP65R099C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP65R099C6XKSA1 IPP65R099C6-DTE.pdf
IPP65R099C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R099C6XKSA1 ipa65r099c6.pdf
IPP65R099C6XKSA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-220 Tube
товар відсутній
IPP65R099C6XKSA1 IPx65R099C6.pdf
IPP65R099C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 38A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPP65R099CFD7AAKSA1 infineon-ipp65r099cfd7a-datasheet-v02_01-en.pdf
Виробник: Infineon Technologies
N-Channel MOSFET Transistor
товар відсутній
IPT65R099CFD7XTMA1 infineon-ipt65r099cfd7-datasheet-v02_01-en.pdf
Виробник: Infineon Technologies
SP005537607
товар відсутній
IPT65R099CFD7XTMA1
IPT65R099CFD7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TOLL
Part Status: Active
Drain to Source Voltage (Vdss): 650 V
товар відсутній
IPT65R099CFD7XTMA1
IPT65R099CFD7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: TOLL
Drain to Source Voltage (Vdss): 650 V
товар відсутній
IPW65R099C6FKSA1 ipa65r099c6.pdf
IPW65R099C6FKSA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
IPW65R099C6FKSA1 IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019
IPW65R099C6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPW65R099C6FKSA1 Infineon_IPW65R099C6_DS_v02_00_en-1731982.pdf
IPW65R099C6FKSA1
Виробник: Infineon Technologies
MOSFET N-Ch 700V 38A TO247-3
товар відсутній
IPW65R099CFD7AXKSA1 infineon-ipw65r099cfd7a-datasheet-v02_01-en.pdf
Виробник: Infineon Technologies
N-Channel MOSFET Transistor
товар відсутній