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IPB65R099CFD7AATMA1 IPB65R099CFD7AATMA1 Infineon Technologies Infineon_IPB65R099CFD7A_DataSheet_v02_01_EN-3362233.pdf MOSFETs N
на замовлення 1362 шт:
термін постачання 21-30 дні (днів)
1+413.77 грн
10+ 342.31 грн
100+ 241.37 грн
500+ 219.55 грн
1000+ 186.48 грн
2000+ 169.59 грн
IPBE65R099CFD7AATMA1 IPBE65R099CFD7AATMA1 Infineon Technologies Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
на замовлення 784 шт:
термін постачання 21-31 дні (днів)
1+394.31 грн
10+ 319.01 грн
100+ 258.07 грн
500+ 215.28 грн
IPBE65R099CFD7AATMA1 IPBE65R099CFD7AATMA1 Infineon Technologies Infineon_IPBE65R099CFD7A_DataSheet_v02_02_EN-3362352.pdf MOSFETs N
на замовлення 854 шт:
термін постачання 21-30 дні (днів)
1+424.45 грн
10+ 351.21 грн
100+ 247.7 грн
500+ 219.55 грн
1000+ 187.89 грн
2000+ 176.63 грн
IPDQ65R099CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8935b833b7 Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 460 шт:
термін постачання 21-31 дні (днів)
1+394.31 грн
10+ 340.71 грн
25+ 322.09 грн
100+ 261.96 грн
250+ 248.52 грн
IPDQ65R099CFD7AXTMA1 Infineon Technologies Infineon_IPDQ65R099CFD7A_DataSheet_v02_01_EN-3324419.pdf MOSFETs Y
на замовлення 480 шт:
термін постачання 21-30 дні (днів)
1+422.8 грн
10+ 360.12 грн
25+ 296.26 грн
100+ 254.03 грн
250+ 239.26 грн
500+ 226.59 грн
750+ 189.29 грн
IPDQ65R099CFD7XTMA1 IPDQ65R099CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R099CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e408887d77d2 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
1+348.63 грн
10+ 301.56 грн
25+ 285.14 грн
100+ 231.91 грн
250+ 220.01 грн
IPDQ65R099CFD7XTMA1 IPDQ65R099CFD7XTMA1 Infineon Technologies Infineon_IPDQ65R099CFD7_DataSheet_v02_00_EN-3159489.pdf MOSFETs Y
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+375.19 грн
10+ 320.46 грн
25+ 263.18 грн
100+ 225.89 грн
250+ 213.22 грн
500+ 200.55 грн
750+ 166.78 грн
IPDQ65R099CFD7XTMA1 IPDQ65R099CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R099CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e408887d77d2 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Power Dissipation (Max): 186W (Tc)
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
750+218.45 грн
Мінімальне замовлення: 750
IPL65R099C7AUMA1 IPL65R099C7AUMA1 Infineon Technologies INFN-S-A0003614916-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 9176 шт:
термін постачання 21-31 дні (днів)
1+383.65 грн
10+ 310.73 грн
100+ 251.39 грн
500+ 209.71 грн
1000+ 179.56 грн
IPL65R099C7AUMA1 IPL65R099C7AUMA1 Infineon Technologies Infineon_IPL65R099C7_DS_v02_01_EN-1731749.pdf MOSFETs HIGH POWER BEST IN CLASS
на замовлення 2425 шт:
термін постачання 21-30 дні (днів)
1+412.95 грн
10+ 342.31 грн
25+ 296.96 грн
100+ 240.66 грн
500+ 213.92 грн
1000+ 182.96 грн
3000+ 172.41 грн
IPL65R099C7AUMA1 IPL65R099C7AUMA1 Infineon Technologies INFN-S-A0003614916-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+187.09 грн
Мінімальне замовлення: 3000
IPP65R099CFD7AAKSA1 IPP65R099CFD7AAKSA1 Infineon Technologies Infineon-IPP65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e9346d9680b Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
2+264.9 грн
Мінімальне замовлення: 2
IPP65R099CFD7AAKSA1 IPP65R099CFD7AAKSA1 Infineon Technologies Infineon_IPP65R099CFD7A_DataSheet_v02_01_EN-3362856.pdf MOSFETs N
на замовлення 569 шт:
термін постачання 21-30 дні (днів)
2+284.88 грн
25+ 222.54 грн
100+ 180.85 грн
250+ 180.15 грн
500+ 173.81 грн
1000+ 169.59 грн
Мінімальне замовлення: 2
IPT65R099CFD7XTMA1 IPT65R099CFD7XTMA1 Infineon Technologies Infineon_IPT65R099CFD7_DataSheet_v02_01_EN-3159599.pdf MOSFETs Y
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
1+334.14 грн
10+ 276.76 грн
100+ 194.92 грн
500+ 173.11 грн
1000+ 148.48 грн
2000+ 139.33 грн
IPT65R099CFD7XTMA1 IPT65R099CFD7XTMA1 Infineon Technologies Infineon-IPT65R099CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794edc7b78a2 Description: MOSFET N-CH 650V 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-2
Drain to Source Voltage (Vdss): 650 V
на замовлення 1995 шт:
термін постачання 21-31 дні (днів)
1+310.57 грн
10+ 251.42 грн
100+ 203.39 грн
500+ 169.66 грн
1000+ 145.27 грн
IPW65R099C6 IPW65R099C6 Infineon Technologies Infineon_IPW65R099C6_DS_v02_00_en-1731982.pdf MOSFETs N-Ch 700V 38A TO247-3
на замовлення 181 шт:
термін постачання 21-30 дні (днів)
1+596.03 грн
10+ 503.35 грн
25+ 397.59 грн
100+ 364.51 грн
240+ 343.4 грн
480+ 322.29 грн
1200+ 289.92 грн
IPW65R099CFD7AXKSA1 IPW65R099CFD7AXKSA1 Infineon Technologies Infineon_IPW65R099CFD7A_DataSheet_v02_01_EN-3362685.pdf MOSFETs Y
на замовлення 115 шт:
термін постачання 21-30 дні (днів)
1+465.49 грн
10+ 455.61 грн
25+ 318.77 грн
100+ 285 грн
480+ 225.89 грн
1200+ 216.03 грн
IPW65R099CFD7AXKSA1 IPW65R099CFD7AXKSA1 Infineon Technologies Infineon-IPW65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f920171c028ca1d0912 Description: MOSFET N-CH 650V 24A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO247-3-41
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
1+433.13 грн
30+ 332.67 грн
120+ 297.66 грн
2N7002K 2N7002K ONSEMI 2288093.pdf Description: ONSEMI - 2N7002K - Leistungs-MOSFET, n-Kanal, 60 V, 300 mA, 2 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 300mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 350mW
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 2ohm
SVHC: No SVHC (23-Jan-2024)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+4.26 грн
Мінімальне замовлення: 3000
IPA65R099C6XKSA1 IPA65R099C6XKSA1 Infineon Technologies IPx65R099C6.pdf Description: MOSFET N-CH 650V 38A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3-111
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPA65R099C6XKSA1 IPA65R099C6XKSA1 Infineon Technologies ipa65r099c6.pdf Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
IPB65R099C6ATMA1 IPB65R099C6ATMA1 INFINEON TECHNOLOGIES IPB65R099C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPB65R099C6ATMA1 IPB65R099C6ATMA1 INFINEON TECHNOLOGIES IPB65R099C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPB65R099C6ATMA1 IPB65R099C6ATMA1 Infineon Technologies ipa65r099c6.pdf Trans MOSFET N-CH 650V 38A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IPB65R099C6ATMA1 IPB65R099C6ATMA1 Infineon Technologies IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019 Description: MOSFET N-CH 650V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPB65R099C6ATMA1 IPB65R099C6ATMA1 Infineon Technologies IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019 Description: MOSFET N-CH 650V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPB65R099CFD7AATMA1 IPB65R099CFD7AATMA1 Infineon Technologies Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805 Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товар відсутній
IPB65R099CFD7AATMA1 Infineon Technologies infineon-ipb65r099cfd7a-datasheet-v02_01-en.pdf N-Channel MOSFET Transistor
товар відсутній
IPB65R099CFD7AATMA1 IPB65R099CFD7AATMA1 Infineon Technologies Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805 Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товар відсутній
IPBE65R099CFD7AATMA1 Infineon Technologies infineon-ipbe65r099cfd7a-datasheet-v02_02-en.pdf N-Channel MOSFET Transistor
товар відсутній
IPBE65R099CFD7AATMA1 IPBE65R099CFD7AATMA1 Infineon Technologies Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товар відсутній
IPDQ65R099CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8935b833b7 AUTOMOTIVE_COOLMOS
товар відсутній
IPDQ65R099CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8935b833b7 Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
IPDQ65R099CFD7XTMA1 Infineon Technologies infineon-ipdq65r099cfd7-datasheet-v02_00-en.pdf Trans MOSFET N-CH 700V 29A 22-Pin HDSOP EP T/R
товар відсутній
IPI65R099C6XKSA1 IPI65R099C6XKSA1 INFINEON TECHNOLOGIES IPI65R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
IPI65R099C6XKSA1 IPI65R099C6XKSA1 INFINEON TECHNOLOGIES IPI65R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPI65R099C6XKSA1 IPI65R099C6XKSA1 Infineon Technologies IPx65R099C6.pdf Description: MOSFET N-CH 650V 38A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPI65R099C6XKSA1 IPI65R099C6XKSA1 Infineon Technologies ipa65r099c6.pdf Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-262 Tube
товар відсутній
IPL65R099C7 IPL65R099C7 Infineon Technologies Infineon_IPL65R099C7_DS_v02_01_EN-1731749.pdf MOSFETs HIGH POWER BEST IN CLASS
товар відсутній
IPL65R099C7AUMA1 IPL65R099C7AUMA1 INFINEON TECHNOLOGIES IPL65R099C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPL65R099C7AUMA1 IPL65R099C7AUMA1 INFINEON TECHNOLOGIES IPL65R099C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPL65R099C7AUMA1 IPL65R099C7AUMA1 Infineon Technologies 4992840301036662infineon-ipl65r099c7-ds-v02_00-en.pdffileid5546d46145da30e80145f0.pdf Trans MOSFET N-CH 650V 21A 4-Pin VSON EP T/R
товар відсутній
IPP65R099C6XKSA1 IPP65R099C6XKSA1 INFINEON TECHNOLOGIES IPP65R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP65R099C6XKSA1 IPP65R099C6XKSA1 INFINEON TECHNOLOGIES IPP65R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R099C6XKSA1 IPP65R099C6XKSA1 Infineon Technologies IPx65R099C6.pdf Description: MOSFET N-CH 650V 38A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPP65R099C6XKSA1 IPP65R099C6XKSA1 Infineon Technologies ipa65r099c6.pdf Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-220 Tube
товар відсутній
IPP65R099CFD7AAKSA1 Infineon Technologies infineon-ipp65r099cfd7a-datasheet-v02_01-en.pdf N-Channel MOSFET Transistor
товар відсутній
IPT65R099CFD7XTMA1 IPT65R099CFD7XTMA1 Infineon Technologies Infineon-IPT65R099CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794edc7b78a2 Description: MOSFET N-CH 650V 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drain to Source Voltage (Vdss): 650 V
товар відсутній
IPT65R099CFD7XTMA1 Infineon Technologies infineon-ipt65r099cfd7-datasheet-v02_01-en.pdf SP005537607
товар відсутній
IPW65R099C6FKSA1 IPW65R099C6FKSA1 Infineon Technologies ipa65r099c6.pdf Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
IPW65R099C6FKSA1 IPW65R099C6FKSA1 Infineon Technologies IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019 Description: MOSFET N-CH 650V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPW65R099C6FKSA1 IPW65R099C6FKSA1 Infineon Technologies Infineon_IPW65R099C6_DS_v02_00_en-1731982.pdf MOSFETs N-Ch 700V 38A TO247-3
товар відсутній
IPW65R099CFD7AXKSA1 Infineon Technologies infineon-ipw65r099cfd7a-datasheet-v02_01-en.pdf N-Channel MOSFET Transistor
товар відсутній
WSJM65R099DBJ WSJM65R099DBJ WeEn Semiconductors WSJM65R099DB_Product_Rev_01-3436318.pdf WSJM65R099DB/TO263/REEL 13" Q1/T1 *STANDARD MARK SMD
товар відсутній
WSJM65R099DQ WSJM65R099DQ WeEn Semiconductors WSJM65R099D_Product_Rev_01-3435939.pdf WSJM65R099D/SOT78/STANDARD MARKING * HORIZONTAL, RAIL PACK
товар відсутній
WSJM65R099DTLJ WeEn Semiconductors WSJM65R099DTL_Product_Rev_01-3436679.pdf WSJM65R099DTL/TOLL/REEL 13" Q1/T1 *STANDARD MARK SMD
товар відсутній
WSJM65R099DWQ WSJM65R099DWQ WeEn Semiconductors WSJM65R099DW_Product_Rev_01-3436171.pdf WSJM65R099DW/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK
товар відсутній
WSJM65R099DXQ WSJM65R099DXQ WeEn Semiconductors WSJM65R099DX_Product_Rev_01-3436229.pdf WSJM65R099DX/SOT186A/STANDARD MARKING * HORIZONTAL, RAIL PACK
товар відсутній
IPB65R099CFD7AATMA1 Infineon_IPB65R099CFD7A_DataSheet_v02_01_EN-3362233.pdf
IPB65R099CFD7AATMA1
Виробник: Infineon Technologies
MOSFETs N
на замовлення 1362 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+413.77 грн
10+ 342.31 грн
100+ 241.37 грн
500+ 219.55 грн
1000+ 186.48 грн
2000+ 169.59 грн
IPBE65R099CFD7AATMA1 Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d
IPBE65R099CFD7AATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
на замовлення 784 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+394.31 грн
10+ 319.01 грн
100+ 258.07 грн
500+ 215.28 грн
IPBE65R099CFD7AATMA1 Infineon_IPBE65R099CFD7A_DataSheet_v02_02_EN-3362352.pdf
IPBE65R099CFD7AATMA1
Виробник: Infineon Technologies
MOSFETs N
на замовлення 854 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+424.45 грн
10+ 351.21 грн
100+ 247.7 грн
500+ 219.55 грн
1000+ 187.89 грн
2000+ 176.63 грн
IPDQ65R099CFD7AXTMA1 Infineon-IPDQ65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8935b833b7
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 460 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+394.31 грн
10+ 340.71 грн
25+ 322.09 грн
100+ 261.96 грн
250+ 248.52 грн
IPDQ65R099CFD7AXTMA1 Infineon_IPDQ65R099CFD7A_DataSheet_v02_01_EN-3324419.pdf
Виробник: Infineon Technologies
MOSFETs Y
на замовлення 480 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+422.8 грн
10+ 360.12 грн
25+ 296.26 грн
100+ 254.03 грн
250+ 239.26 грн
500+ 226.59 грн
750+ 189.29 грн
IPDQ65R099CFD7XTMA1 Infineon-IPDQ65R099CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e408887d77d2
IPDQ65R099CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+348.63 грн
10+ 301.56 грн
25+ 285.14 грн
100+ 231.91 грн
250+ 220.01 грн
IPDQ65R099CFD7XTMA1 Infineon_IPDQ65R099CFD7_DataSheet_v02_00_EN-3159489.pdf
IPDQ65R099CFD7XTMA1
Виробник: Infineon Technologies
MOSFETs Y
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+375.19 грн
10+ 320.46 грн
25+ 263.18 грн
100+ 225.89 грн
250+ 213.22 грн
500+ 200.55 грн
750+ 166.78 грн
IPDQ65R099CFD7XTMA1 Infineon-IPDQ65R099CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e408887d77d2
IPDQ65R099CFD7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Power Dissipation (Max): 186W (Tc)
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
750+218.45 грн
Мінімальне замовлення: 750
IPL65R099C7AUMA1 INFN-S-A0003614916-1.pdf?t.download=true&u=5oefqw
IPL65R099C7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 9176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+383.65 грн
10+ 310.73 грн
100+ 251.39 грн
500+ 209.71 грн
1000+ 179.56 грн
IPL65R099C7AUMA1 Infineon_IPL65R099C7_DS_v02_01_EN-1731749.pdf
IPL65R099C7AUMA1
Виробник: Infineon Technologies
MOSFETs HIGH POWER BEST IN CLASS
на замовлення 2425 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+412.95 грн
10+ 342.31 грн
25+ 296.96 грн
100+ 240.66 грн
500+ 213.92 грн
1000+ 182.96 грн
3000+ 172.41 грн
IPL65R099C7AUMA1 INFN-S-A0003614916-1.pdf?t.download=true&u=5oefqw
IPL65R099C7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+187.09 грн
Мінімальне замовлення: 3000
IPP65R099CFD7AAKSA1 Infineon-IPP65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e9346d9680b
IPP65R099CFD7AAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+264.9 грн
Мінімальне замовлення: 2
IPP65R099CFD7AAKSA1 Infineon_IPP65R099CFD7A_DataSheet_v02_01_EN-3362856.pdf
IPP65R099CFD7AAKSA1
Виробник: Infineon Technologies
MOSFETs N
на замовлення 569 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
2+284.88 грн
25+ 222.54 грн
100+ 180.85 грн
250+ 180.15 грн
500+ 173.81 грн
1000+ 169.59 грн
Мінімальне замовлення: 2
IPT65R099CFD7XTMA1 Infineon_IPT65R099CFD7_DataSheet_v02_01_EN-3159599.pdf
IPT65R099CFD7XTMA1
Виробник: Infineon Technologies
MOSFETs Y
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+334.14 грн
10+ 276.76 грн
100+ 194.92 грн
500+ 173.11 грн
1000+ 148.48 грн
2000+ 139.33 грн
IPT65R099CFD7XTMA1 Infineon-IPT65R099CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794edc7b78a2
IPT65R099CFD7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-2
Drain to Source Voltage (Vdss): 650 V
на замовлення 1995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+310.57 грн
10+ 251.42 грн
100+ 203.39 грн
500+ 169.66 грн
1000+ 145.27 грн
IPW65R099C6 Infineon_IPW65R099C6_DS_v02_00_en-1731982.pdf
IPW65R099C6
Виробник: Infineon Technologies
MOSFETs N-Ch 700V 38A TO247-3
на замовлення 181 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+596.03 грн
10+ 503.35 грн
25+ 397.59 грн
100+ 364.51 грн
240+ 343.4 грн
480+ 322.29 грн
1200+ 289.92 грн
IPW65R099CFD7AXKSA1 Infineon_IPW65R099CFD7A_DataSheet_v02_01_EN-3362685.pdf
IPW65R099CFD7AXKSA1
Виробник: Infineon Technologies
MOSFETs Y
на замовлення 115 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+465.49 грн
10+ 455.61 грн
25+ 318.77 грн
100+ 285 грн
480+ 225.89 грн
1200+ 216.03 грн
IPW65R099CFD7AXKSA1 Infineon-IPW65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f920171c028ca1d0912
IPW65R099CFD7AXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO247-3-41
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+433.13 грн
30+ 332.67 грн
120+ 297.66 грн
2N7002K 2288093.pdf
2N7002K
Виробник: ONSEMI
Description: ONSEMI - 2N7002K - Leistungs-MOSFET, n-Kanal, 60 V, 300 mA, 2 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 300mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 350mW
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 2ohm
SVHC: No SVHC (23-Jan-2024)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+4.26 грн
Мінімальне замовлення: 3000
IPA65R099C6XKSA1 IPx65R099C6.pdf
IPA65R099C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 38A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3-111
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPA65R099C6XKSA1 ipa65r099c6.pdf
IPA65R099C6XKSA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
IPB65R099C6ATMA1 IPB65R099C6-DTE.pdf
IPB65R099C6ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPB65R099C6ATMA1 IPB65R099C6-DTE.pdf
IPB65R099C6ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPB65R099C6ATMA1 ipa65r099c6.pdf
IPB65R099C6ATMA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 38A 3-Pin(2+Tab) D2PAK T/R
товар відсутній
IPB65R099C6ATMA1 IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019
IPB65R099C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPB65R099C6ATMA1 IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019
IPB65R099C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPB65R099CFD7AATMA1 Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805
IPB65R099CFD7AATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товар відсутній
IPB65R099CFD7AATMA1 infineon-ipb65r099cfd7a-datasheet-v02_01-en.pdf
Виробник: Infineon Technologies
N-Channel MOSFET Transistor
товар відсутній
IPB65R099CFD7AATMA1 Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805
IPB65R099CFD7AATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товар відсутній
IPBE65R099CFD7AATMA1 infineon-ipbe65r099cfd7a-datasheet-v02_02-en.pdf
Виробник: Infineon Technologies
N-Channel MOSFET Transistor
товар відсутній
IPBE65R099CFD7AATMA1 Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d
IPBE65R099CFD7AATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
товар відсутній
IPDQ65R099CFD7AXTMA1 Infineon-IPDQ65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8935b833b7
Виробник: Infineon Technologies
AUTOMOTIVE_COOLMOS
товар відсутній
IPDQ65R099CFD7AXTMA1 Infineon-IPDQ65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8935b833b7
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
IPDQ65R099CFD7XTMA1 infineon-ipdq65r099cfd7-datasheet-v02_00-en.pdf
Виробник: Infineon Technologies
Trans MOSFET N-CH 700V 29A 22-Pin HDSOP EP T/R
товар відсутній
IPI65R099C6XKSA1 IPI65R099C6-DTE.pdf
IPI65R099C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
IPI65R099C6XKSA1 IPI65R099C6-DTE.pdf
IPI65R099C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPI65R099C6XKSA1 IPx65R099C6.pdf
IPI65R099C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 38A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPI65R099C6XKSA1 ipa65r099c6.pdf
IPI65R099C6XKSA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-262 Tube
товар відсутній
IPL65R099C7 Infineon_IPL65R099C7_DS_v02_01_EN-1731749.pdf
IPL65R099C7
Виробник: Infineon Technologies
MOSFETs HIGH POWER BEST IN CLASS
товар відсутній
IPL65R099C7AUMA1 IPL65R099C7-DTE.pdf
IPL65R099C7AUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPL65R099C7AUMA1 IPL65R099C7-DTE.pdf
IPL65R099C7AUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPL65R099C7AUMA1 4992840301036662infineon-ipl65r099c7-ds-v02_00-en.pdffileid5546d46145da30e80145f0.pdf
IPL65R099C7AUMA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 21A 4-Pin VSON EP T/R
товар відсутній
IPP65R099C6XKSA1 IPP65R099C6-DTE.pdf
IPP65R099C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPP65R099C6XKSA1 IPP65R099C6-DTE.pdf
IPP65R099C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPP65R099C6XKSA1 IPx65R099C6.pdf
IPP65R099C6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 38A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPP65R099C6XKSA1 ipa65r099c6.pdf
IPP65R099C6XKSA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-220 Tube
товар відсутній
IPP65R099CFD7AAKSA1 infineon-ipp65r099cfd7a-datasheet-v02_01-en.pdf
Виробник: Infineon Technologies
N-Channel MOSFET Transistor
товар відсутній
IPT65R099CFD7XTMA1 Infineon-IPT65R099CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794edc7b78a2
IPT65R099CFD7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drain to Source Voltage (Vdss): 650 V
товар відсутній
IPT65R099CFD7XTMA1 infineon-ipt65r099cfd7-datasheet-v02_01-en.pdf
Виробник: Infineon Technologies
SP005537607
товар відсутній
IPW65R099C6FKSA1 ipa65r099c6.pdf
IPW65R099C6FKSA1
Виробник: Infineon Technologies
Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
IPW65R099C6FKSA1 IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019
IPW65R099C6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товар відсутній
IPW65R099C6FKSA1 Infineon_IPW65R099C6_DS_v02_00_en-1731982.pdf
IPW65R099C6FKSA1
Виробник: Infineon Technologies
MOSFETs N-Ch 700V 38A TO247-3
товар відсутній
IPW65R099CFD7AXKSA1 infineon-ipw65r099cfd7a-datasheet-v02_01-en.pdf
Виробник: Infineon Technologies
N-Channel MOSFET Transistor
товар відсутній
WSJM65R099DBJ WSJM65R099DB_Product_Rev_01-3436318.pdf
WSJM65R099DBJ
Виробник: WeEn Semiconductors
WSJM65R099DB/TO263/REEL 13" Q1/T1 *STANDARD MARK SMD
товар відсутній
WSJM65R099DQ WSJM65R099D_Product_Rev_01-3435939.pdf
WSJM65R099DQ
Виробник: WeEn Semiconductors
WSJM65R099D/SOT78/STANDARD MARKING * HORIZONTAL, RAIL PACK
товар відсутній
WSJM65R099DTLJ WSJM65R099DTL_Product_Rev_01-3436679.pdf
Виробник: WeEn Semiconductors
WSJM65R099DTL/TOLL/REEL 13" Q1/T1 *STANDARD MARK SMD
товар відсутній
WSJM65R099DWQ WSJM65R099DW_Product_Rev_01-3436171.pdf
WSJM65R099DWQ
Виробник: WeEn Semiconductors
WSJM65R099DW/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK
товар відсутній
WSJM65R099DXQ WSJM65R099DX_Product_Rev_01-3436229.pdf
WSJM65R099DXQ
Виробник: WeEn Semiconductors
WSJM65R099DX/SOT186A/STANDARD MARKING * HORIZONTAL, RAIL PACK
товар відсутній
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