Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (164677) > Сторінка 2734 з 2745
| Фото | Назва | Виробник | Інформація |
Доступність |
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SMBJ13A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 15.2V; 29A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 15.2V Max. forward impulse current: 29A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1890 шт: термін постачання 21-30 дні (днів) |
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VN5016AJTR-E | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: power switch; high-side; 46A; PowerSSO12; 4.5÷36V; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 46A Mounting: SMD Number of channels: 1 Operating temperature: -40...150°C Case: PowerSSO12 Supply voltage: 4.5...36V Kind of package: reel; tape On-state resistance: 16mΩ Application: automotive industry |
на замовлення 3307 шт: термін постачання 21-30 дні (днів) |
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VN330SP-E | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: power switch; high-side; 1A; PowerSO10; 10÷36V Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1A Mounting: SMD Number of channels: 4 Case: PowerSO10 Supply voltage: 10...36V On-state resistance: 0.32Ω |
на замовлення 168 шт: термін постачання 21-30 дні (днів) |
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VN5050AJTR-E | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: power switch; high-side; 12A; PowerSSO12; 4.5÷36V; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 12A Mounting: SMD Number of channels: 1 Operating temperature: -40...150°C Case: PowerSSO12 Supply voltage: 4.5...36V Kind of package: reel; tape On-state resistance: 50mΩ Application: automotive industry |
на замовлення 1816 шт: термін постачання 21-30 дні (днів) |
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VN808-E | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: power switch; high-side; 0.7A; PowerSO36; 45V; tube Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Mounting: SMD Number of channels: 8 Case: PowerSO36 Supply voltage: 45V Kind of package: tube |
на замовлення 132 шт: термін постачання 21-30 дні (днів) |
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1.5KE10A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 10V; 100A; unidirectional; DO201; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 100A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 10µA Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STF7N105K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.05kV; 4A; Idm: 16A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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| STF5N95K3 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 950V; 4A; Idm: 16A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 4A Pulsed drain current: 16A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STF5N105K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.05kV; 3A; Idm: 12A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 3A Pulsed drain current: 12A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 12.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STF5N95K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 950V; 3.5A; Idm: 14A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 12.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STI4N62K3 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 2A; 70W; I2PAK Type of transistor: N-MOSFET Technology: SuperMESH3™ Drain-source voltage: 620V Drain current: 2A Power dissipation: 70W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of channel: enhancement Version: ESD Polarisation: unipolar Kind of package: tube |
на замовлення 186 шт: термін постачання 21-30 дні (днів) |
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STD4N62K3 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 620V; 2A; 70W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Drain-source voltage: 620V Drain current: 2A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of channel: enhancement Version: ESD Polarisation: unipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STU4N62K3 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; 620V; 3.8A; 70W; IPAK,TO251 Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 620V Drain current: 3.8A Power dissipation: 70W Case: IPAK; TO251 Gate-source voltage: 30V On-state resistance: 2Ω Mounting: THT Gate charge: 22nC Kind of channel: enhancement |
на замовлення 1100 шт: термін постачання 21-30 дні (днів) |
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2STR2230 | STMicroelectronics |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1.5A; 500mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Collector current: 1.5A Power dissipation: 0.5W Collector-emitter voltage: 30V Current gain: 70...560 Frequency: 100MHz Polarisation: bipolar Type of transistor: PNP |
на замовлення 933 шт: термін постачання 21-30 дні (днів) |
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STD4NK60Z-1 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Power dissipation: 70W Case: IPAK On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 26nC Pulsed drain current: 16A |
на замовлення 318 шт: термін постачання 21-30 дні (днів) |
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| STB4NK60Z-1 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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| TCPP01-M12 | STMicroelectronics |
Category: UnclassifiedDescription: TCPP01-M12 |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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STP17NK40ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 9.4A; 35W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 400V Drain current: 9.4A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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STP19NF20 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MESH OVERLAY™; unipolar; 200V; 9.45A; 90W Type of transistor: N-MOSFET Technology: MESH OVERLAY™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.45A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 77 шт: термін постачання 21-30 дні (днів) |
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DALC208SC6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: diode arrays; 6A; bidirectional; SOT23-6; reel,tape; ESD Type of diode: diode arrays Semiconductor structure: bidirectional Mounting: SMD Case: SOT23-6 Max. off-state voltage: 9V Kind of package: reel; tape Version: ESD Leakage current: 1µA Max. forward impulse current: 6A |
на замовлення 3598 шт: термін постачання 21-30 дні (днів) |
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STP5NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.16A Pulsed drain current: 20A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
на замовлення 170 шт: термін постачання 21-30 дні (днів) |
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SM6T33CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 11084 шт: термін постачання 21-30 дні (днів) |
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SM6T36A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 900 шт: термін постачання 21-30 дні (днів) |
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SM6T33CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
на замовлення 22695 шт: термін постачання 21-30 дні (днів) |
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SM6T36CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1519 шт: термін постачання 21-30 дні (днів) |
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SM6T24A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Leakage current: 1µA Tolerance: ±5% Max. forward impulse current: 18A Max. off-state voltage: 20.5V Breakdown voltage: 24V Peak pulse power dissipation: 0.6kW Kind of package: reel; tape Semiconductor structure: unidirectional Case: SMB Mounting: SMD |
на замовлення 936 шт: термін постачання 21-30 дні (днів) |
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SM6T200A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 4682 шт: термін постачання 21-30 дні (днів) |
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SM6T12CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 12V; 36A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 36A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1463 шт: термін постачання 21-30 дні (днів) |
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SM6T220A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 220V; 2A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 188V Breakdown voltage: 220V Max. forward impulse current: 2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 4793 шт: термін постачання 21-30 дні (днів) |
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SM6T36CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
на замовлення 2175 шт: термін постачання 21-30 дні (днів) |
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| STP65N045M9 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 35A; Idm: 170A Type of transistor: N-MOSFET Technology: MDmesh™ M9 Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Pulsed drain current: 170A Power dissipation: 245W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STP65N150M9 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A Type of transistor: N-MOSFET Technology: MDmesh™ M9 Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.5A Pulsed drain current: 60A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM2903WHYST | STMicroelectronics |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; miniSO8; reel,tape Type of integrated circuit: comparator Mounting: SMT Case: miniSO8 Operating temperature: -40...150°C Input offset voltage: 15mV Kind of package: reel; tape Input bias current: 0.4µA Input offset current: 150nA Kind of comparator: low-power Kind of output: open collector Number of comparators: 2 Operating voltage: 2...36V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TSV912HYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 8MHz; Ch: 2; SO8; 2.5÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 8MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 4.5V/μs Quiescent current: 1.1mA Operating temperature: -40...150°C Input offset voltage: 7.5mV Voltage supply range: 2.5...5.5V DC Integrated circuit features: rail-to-rail; universal Kind of package: reel; tape Input bias current: 5nA Input offset current: 5nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STM32F413MHY6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 60 Case: WLCSP81 Supply voltage: 1.7...3.6V DC Interface: CAN x3; full duplex; I2C x3; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 320kB SRAM; 1.5MB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 Number of 16bit timers: 15 Family: STM32F4 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32F423MHY3TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 60 Case: WLCSP81 Supply voltage: 1.7...3.6V DC Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 320kB SRAM; 1.5MB FLASH Operating temperature: -40...125°C Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 Number of 16bit timers: 15 Family: STM32F4 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32F423MHY6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 60 Case: WLCSP81 Supply voltage: 1.7...3.6V DC Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 320kB SRAM; 1.5MB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 Number of 16bit timers: 15 Family: STM32F4 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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T1010H-6G | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature Max. off-state voltage: 0.6kV Features of semiconductor devices: high temperature Kind of package: tube Mounting: SMD Case: D2PAK Type of thyristor: triac Gate current: 10mA Max. load current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| T1010H-6G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature Max. off-state voltage: 0.6kV Features of semiconductor devices: high temperature Kind of package: reel; tape Mounting: SMD Case: D2PAK Type of thyristor: triac Gate current: 10mA Max. load current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STD85N10F7AG | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; N; 100V; 70A; 85W; DPAK; automotive industry Type of transistor: N-MOSFET Technology: MOSFET Polarisation: N Drain-source voltage: 100V Drain current: 70A Power dissipation: 85W Case: DPAK Gate-source voltage: 20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 45nC Kind of channel: enhancement Application: automotive industry Electrical mounting: SMT |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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TMBYV10-60FILM | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; MELF; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: MELF Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 594 шт: термін постачання 21-30 дні (днів) |
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| STGB10NB40LZT4 | STMicroelectronics |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD Type of transistor: IGBT Collector-emitter voltage: 410V Collector current: 10A Power dissipation: 150W Case: D2PAK Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: internally clamped Application: automotive industry Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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VNS14NV04PTR-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; 12A; Ch: 1; SMD; SO8; reel,tape Type of integrated circuit: power switch Output current: 12A Number of channels: 1 Mounting: SMD Case: SO8 Kind of package: reel; tape On-state resistance: 35mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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M95P32-IXMNT/E | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 32MbEEPROM; SPI; 4Mx8bit; 1.6÷3.6V; SO8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32Mb EEPROM Interface: SPI Memory organisation: 4Mx8bit Operating voltage: 1.6...3.6V Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| ST25R3920B-AQWT | STMicroelectronics |
Category: UnclassifiedDescription: ST25R3920B-AQWT |
на замовлення 11963 шт: термін постачання 21-30 дні (днів) |
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T1635H-6T | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Max. forward impulse current: 0.168kA Mounting: THT Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: tube |
на замовлення 57 шт: термін постачання 21-30 дні (днів) |
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T1635H-6G | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; Snubberless™ Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Max. forward impulse current: 0.168kA Mounting: SMD Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: tube Technology: Snubberless™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| T1635H-6G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Max. forward impulse current: 0.168kA Mounting: SMD Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| T1635H-6I | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 16A; TO220ABIns; Igt: 35mA; Ifsm: 168A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220ABIns Max. forward impulse current: 0.168kA Mounting: THT Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| T1635H-8G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: D2PAK Max. forward impulse current: 0.168kA Mounting: SMD Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| T1635H-8G | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: D2PAK Max. forward impulse current: 0.168kA Mounting: SMD Gate current: 35mA Features of semiconductor devices: high temperature Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| T1635H-8I | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Ifsm: 160A; Ufmax: 1.3V Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Max. forward impulse current: 160A Mounting: THT Max. forward voltage: 1.3V |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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T3050H-6T | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 30A; TO220AB; Igt: 50mA; Ifsm: 284A; Snubberless™ Case: TO220AB Mounting: THT Kind of package: tube Type of thyristor: triac Gate current: 50mA Max. load current: 30A Max. forward impulse current: 284A Max. off-state voltage: 0.6kV Features of semiconductor devices: high temperature Technology: Snubberless™ |
на замовлення 191 шт: термін постачання 21-30 дні (днів) |
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| T3050H-6I | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 30A; TO220ABIns; Igt: 50mA; Ifsm: 284A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 30A Case: TO220ABIns Gate current: 50mA Max. forward impulse current: 284A Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| T3050H-6G | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 30A Case: D2PAK Gate current: 50mA Max. forward impulse current: 284A Features of semiconductor devices: high temperature Mounting: SMD Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| T3050H-6G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 30A Case: D2PAK Gate current: 50mA Max. forward impulse current: 284A Features of semiconductor devices: high temperature Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
BULD118D-1 | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 2A; 20W; TO251 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 2A Power dissipation: 20W Case: TO251 Mounting: THT Kind of package: tube Current gain: 50 |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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SM6T220CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 220V; 2A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Case: SMB Mounting: SMD Leakage current: 1µA Max. forward impulse current: 2A Tolerance: ±5% Max. off-state voltage: 188V Breakdown voltage: 220V Semiconductor structure: bidirectional Peak pulse power dissipation: 0.6kW Kind of package: reel; tape |
на замовлення 2012 шт: термін постачання 21-30 дні (днів) |
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| STM32H725ZET6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 550MHz; LQFP144; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 550MHz Mounting: SMD Number of inputs/outputs: 97 Case: LQFP144 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog Memory: 512kB FLASH; 564kB SRAM Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of comparators: 2 Family: STM32H7 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32H733ZGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 550MHz; LQFP144; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 550MHz Mounting: SMD Number of inputs/outputs: 114 Case: LQFP144 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog Memory: 564kB SRAM; 1MB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of comparators: 2 Family: STM32H7 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. |
| SMBJ13A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.22 грн |
| 31+ | 13.11 грн |
| 33+ | 12.31 грн |
| 50+ | 10.63 грн |
| 100+ | 9.91 грн |
| 500+ | 8.47 грн |
| 1000+ | 7.91 грн |
| 1200+ | 7.75 грн |
| VN5016AJTR-E |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 46A; PowerSSO12; 4.5÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 46A
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Case: PowerSSO12
Supply voltage: 4.5...36V
Kind of package: reel; tape
On-state resistance: 16mΩ
Application: automotive industry
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 46A; PowerSSO12; 4.5÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 46A
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Case: PowerSSO12
Supply voltage: 4.5...36V
Kind of package: reel; tape
On-state resistance: 16mΩ
Application: automotive industry
на замовлення 3307 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 185.92 грн |
| 10+ | 136.68 грн |
| 25+ | 123.89 грн |
| 50+ | 119.89 грн |
| VN330SP-E |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 1A; PowerSO10; 10÷36V
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Mounting: SMD
Number of channels: 4
Case: PowerSO10
Supply voltage: 10...36V
On-state resistance: 0.32Ω
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 1A; PowerSO10; 10÷36V
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Mounting: SMD
Number of channels: 4
Case: PowerSO10
Supply voltage: 10...36V
On-state resistance: 0.32Ω
на замовлення 168 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 438.99 грн |
| VN5050AJTR-E |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 12A; PowerSSO12; 4.5÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 12A
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Case: PowerSSO12
Supply voltage: 4.5...36V
Kind of package: reel; tape
On-state resistance: 50mΩ
Application: automotive industry
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 12A; PowerSSO12; 4.5÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 12A
Mounting: SMD
Number of channels: 1
Operating temperature: -40...150°C
Case: PowerSSO12
Supply voltage: 4.5...36V
Kind of package: reel; tape
On-state resistance: 50mΩ
Application: automotive industry
на замовлення 1816 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 138.58 грн |
| 10+ | 95.91 грн |
| 25+ | 87.12 грн |
| 50+ | 83.12 грн |
| VN808-E |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 0.7A; PowerSO36; 45V; tube
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 8
Case: PowerSO36
Supply voltage: 45V
Kind of package: tube
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 0.7A; PowerSO36; 45V; tube
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 8
Case: PowerSO36
Supply voltage: 45V
Kind of package: tube
на замовлення 132 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 525.92 грн |
| 1.5KE10A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 10V; 100A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 10µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 10V; 100A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 10µA
Kind of package: Ammo Pack
товару немає в наявності
В кошику
од. на суму грн.
| STF7N105K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 4A; Idm: 16A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 4A; Idm: 16A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 48 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 185.92 грн |
| STF5N95K3 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 4A; Idm: 16A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 4A; Idm: 16A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STF5N105K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3A; Idm: 12A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 12.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3A; Idm: 12A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 12.5nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STF5N95K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.5A; Idm: 14A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 12.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 3.5A; Idm: 14A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 12.5nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STI4N62K3 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 2A; 70W; I2PAK
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 2A; 70W; I2PAK
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Kind of package: tube
на замовлення 186 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.29 грн |
| 20+ | 20.22 грн |
| 23+ | 17.90 грн |
| 50+ | 15.99 грн |
| STD4N62K3 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 2A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 2A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Drain-source voltage: 620V
Drain current: 2A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Polarisation: unipolar
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| STU4N62K3 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 620V; 3.8A; 70W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 620V
Drain current: 3.8A
Power dissipation: 70W
Case: IPAK; TO251
Gate-source voltage: 30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 22nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 620V; 3.8A; 70W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 620V
Drain current: 3.8A
Power dissipation: 70W
Case: IPAK; TO251
Gate-source voltage: 30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 22nC
Kind of channel: enhancement
на замовлення 1100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 75+ | 37.44 грн |
| 2STR2230 |
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Виробник: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1.5A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1.5A
Power dissipation: 0.5W
Collector-emitter voltage: 30V
Current gain: 70...560
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1.5A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1.5A
Power dissipation: 0.5W
Collector-emitter voltage: 30V
Current gain: 70...560
Frequency: 100MHz
Polarisation: bipolar
Type of transistor: PNP
на замовлення 933 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.01 грн |
| 17+ | 24.94 грн |
| 50+ | 17.02 грн |
| 100+ | 14.39 грн |
| 500+ | 10.23 грн |
| STD4NK60Z-1 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: IPAK
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Pulsed drain current: 16A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 70W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 70W
Case: IPAK
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Pulsed drain current: 16A
на замовлення 318 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.67 грн |
| 12+ | 36.05 грн |
| 75+ | 26.94 грн |
| 150+ | 24.38 грн |
| STB4NK60Z-1 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 42.95 грн |
| TCPP01-M12 |
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на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 42.26 грн |
| STP17NK40ZFP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 9.4A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 9.4A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 9.4A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 270.28 грн |
| 10+ | 203.81 грн |
| STP19NF20 | ![]() |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MESH OVERLAY™; unipolar; 200V; 9.45A; 90W
Type of transistor: N-MOSFET
Technology: MESH OVERLAY™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.45A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MESH OVERLAY™; unipolar; 200V; 9.45A; 90W
Type of transistor: N-MOSFET
Technology: MESH OVERLAY™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.45A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 77 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 74.02 грн |
| 10+ | 67.94 грн |
| DALC208SC6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: diode arrays; 6A; bidirectional; SOT23-6; reel,tape; ESD
Type of diode: diode arrays
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 9V
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
Max. forward impulse current: 6A
Category: Protection diodes - arrays
Description: Diode: diode arrays; 6A; bidirectional; SOT23-6; reel,tape; ESD
Type of diode: diode arrays
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 9V
Kind of package: reel; tape
Version: ESD
Leakage current: 1µA
Max. forward impulse current: 6A
на замовлення 3598 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.68 грн |
| 20+ | 20.78 грн |
| 22+ | 18.38 грн |
| 50+ | 13.27 грн |
| 100+ | 11.59 грн |
| 250+ | 9.67 грн |
| 500+ | 8.63 грн |
| 1000+ | 7.67 грн |
| 1500+ | 7.19 грн |
| STP5NK60Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Pulsed drain current: 20A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.16A; Idm: 20A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.16A
Pulsed drain current: 20A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 170 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.37 грн |
| 10+ | 45.24 грн |
| 50+ | 41.88 грн |
| 100+ | 39.96 грн |
| SM6T33CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 11084 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.27 грн |
| 19+ | 22.06 грн |
| 21+ | 19.66 грн |
| 50+ | 14.87 грн |
| 100+ | 13.11 грн |
| 250+ | 11.03 грн |
| 500+ | 9.51 грн |
| 1000+ | 8.23 грн |
| 2500+ | 6.63 грн |
| SM6T36A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.35 грн |
| 30+ | 13.35 грн |
| 33+ | 12.47 грн |
| 50+ | 11.67 грн |
| 100+ | 10.87 грн |
| 250+ | 9.99 грн |
| 500+ | 9.27 грн |
| SM6T33CAY |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 22695 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.82 грн |
| 21+ | 19.58 грн |
| 100+ | 16.23 грн |
| 250+ | 15.11 грн |
| 500+ | 14.31 грн |
| 1000+ | 13.51 грн |
| 2500+ | 12.55 грн |
| 5000+ | 11.99 грн |
| 7500+ | 11.59 грн |
| SM6T36CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1519 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.43 грн |
| 15+ | 27.02 грн |
| 21+ | 19.82 грн |
| 50+ | 17.82 грн |
| 100+ | 16.23 грн |
| 500+ | 12.63 грн |
| 1000+ | 11.59 грн |
| 1500+ | 9.03 грн |
| SM6T24A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 18A
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 18A
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
на замовлення 936 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.15 грн |
| 17+ | 24.94 грн |
| 50+ | 17.18 грн |
| 100+ | 14.63 грн |
| 250+ | 11.99 грн |
| 500+ | 10.31 грн |
| SM6T200A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 4682 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.15 грн |
| 15+ | 27.97 грн |
| 16+ | 25.34 грн |
| 50+ | 19.66 грн |
| 100+ | 17.42 грн |
| 250+ | 14.71 грн |
| 500+ | 12.95 грн |
| 1000+ | 11.27 грн |
| 2500+ | 9.27 грн |
| SM6T12CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1463 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.82 грн |
| 22+ | 19.02 грн |
| 24+ | 17.10 грн |
| 50+ | 13.19 грн |
| 100+ | 11.67 грн |
| 500+ | 8.87 грн |
| 1000+ | 7.91 грн |
| SM6T220A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 220V; 2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 188V
Breakdown voltage: 220V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 220V; 2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 188V
Breakdown voltage: 220V
Max. forward impulse current: 2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 4793 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.82 грн |
| 21+ | 19.50 грн |
| 23+ | 17.74 грн |
| 50+ | 14.23 грн |
| 100+ | 13.03 грн |
| 250+ | 11.67 грн |
| 500+ | 10.87 грн |
| 1000+ | 10.15 грн |
| 2500+ | 9.27 грн |
| SM6T36CAY |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 2175 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.87 грн |
| 13+ | 31.49 грн |
| 14+ | 28.93 грн |
| 25+ | 24.86 грн |
| 100+ | 20.14 грн |
| 250+ | 18.62 грн |
| STP65N045M9 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 35A; Idm: 170A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 170A
Power dissipation: 245W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 35A; Idm: 170A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 170A
Power dissipation: 245W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STP65N150M9 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 12.5A; Idm: 60A
Type of transistor: N-MOSFET
Technology: MDmesh™ M9
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| LM2903WHYST |
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Виробник: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; miniSO8; reel,tape
Type of integrated circuit: comparator
Mounting: SMT
Case: miniSO8
Operating temperature: -40...150°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input bias current: 0.4µA
Input offset current: 150nA
Kind of comparator: low-power
Kind of output: open collector
Number of comparators: 2
Operating voltage: 2...36V
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; miniSO8; reel,tape
Type of integrated circuit: comparator
Mounting: SMT
Case: miniSO8
Operating temperature: -40...150°C
Input offset voltage: 15mV
Kind of package: reel; tape
Input bias current: 0.4µA
Input offset current: 150nA
Kind of comparator: low-power
Kind of output: open collector
Number of comparators: 2
Operating voltage: 2...36V
товару немає в наявності
В кошику
од. на суму грн.
| TSV912HYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; SO8; 2.5÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 4.5V/μs
Quiescent current: 1.1mA
Operating temperature: -40...150°C
Input offset voltage: 7.5mV
Voltage supply range: 2.5...5.5V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 5nA
Input offset current: 5nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; SO8; 2.5÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 4.5V/μs
Quiescent current: 1.1mA
Operating temperature: -40...150°C
Input offset voltage: 7.5mV
Voltage supply range: 2.5...5.5V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 5nA
Input offset current: 5nA
Application: automotive industry
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| STM32F413MHY6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
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| STM32F423MHY3TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
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| STM32F423MHY6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; WLCSP81; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: WLCSP81
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; full duplex; I2C x3; QUAD SPI; SAI; SDIO; SPI x5; UART x3; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 320kB SRAM; 1.5MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
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| T1010H-6G |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Kind of package: tube
Mounting: SMD
Case: D2PAK
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Kind of package: tube
Mounting: SMD
Case: D2PAK
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
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| T1010H-6G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Type of thyristor: triac
Gate current: 10mA
Max. load current: 10A
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| STD85N10F7AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 70A; 85W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 70A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 70A; 85W; DPAK; automotive industry
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 70A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 71.44 грн |
| TMBYV10-60FILM |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 594 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.52 грн |
| 24+ | 17.26 грн |
| 26+ | 15.75 грн |
| 100+ | 10.95 грн |
| 250+ | 9.03 грн |
| 500+ | 7.51 грн |
| STGB10NB40LZT4 |
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Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 410V; 10A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 410V
Collector current: 10A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
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| VNS14NV04PTR-E |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; 12A; Ch: 1; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Output current: 12A
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 35mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; 12A; Ch: 1; SMD; SO8; reel,tape
Type of integrated circuit: power switch
Output current: 12A
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
On-state resistance: 35mΩ
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| M95P32-IXMNT/E |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32MbEEPROM; SPI; 4Mx8bit; 1.6÷3.6V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32Mb EEPROM
Interface: SPI
Memory organisation: 4Mx8bit
Operating voltage: 1.6...3.6V
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32MbEEPROM; SPI; 4Mx8bit; 1.6÷3.6V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32Mb EEPROM
Interface: SPI
Memory organisation: 4Mx8bit
Operating voltage: 1.6...3.6V
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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| ST25R3920B-AQWT |
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на замовлення 11963 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 333.11 грн |
| T1635H-6T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Max. forward impulse current: 0.168kA
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Max. forward impulse current: 0.168kA
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
на замовлення 57 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 107.59 грн |
| 10+ | 78.33 грн |
| 50+ | 68.74 грн |
| T1635H-6G |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Technology: Snubberless™
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Technology: Snubberless™
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| T1635H-6G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: reel; tape
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| T1635H-6I |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; TO220ABIns; Igt: 35mA; Ifsm: 168A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220ABIns
Max. forward impulse current: 0.168kA
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220ABIns; Igt: 35mA; Ifsm: 168A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220ABIns
Max. forward impulse current: 0.168kA
Mounting: THT
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
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| T1635H-8G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: reel; tape
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| T1635H-8G |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Max. forward impulse current: 0.168kA
Mounting: SMD
Gate current: 35mA
Features of semiconductor devices: high temperature
Kind of package: tube
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| T1635H-8I |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Ifsm: 160A; Ufmax: 1.3V
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Max. forward impulse current: 160A
Mounting: THT
Max. forward voltage: 1.3V
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Ifsm: 160A; Ufmax: 1.3V
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Max. forward impulse current: 160A
Mounting: THT
Max. forward voltage: 1.3V
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 61.11 грн |
| T3050H-6T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; TO220AB; Igt: 50mA; Ifsm: 284A; Snubberless™
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Technology: Snubberless™
Category: Triacs
Description: Triac; 600V; 30A; TO220AB; Igt: 50mA; Ifsm: 284A; Snubberless™
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 50mA
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Technology: Snubberless™
на замовлення 191 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 140.67 грн |
| 10+ | 113.50 грн |
| 25+ | 95.91 грн |
| 50+ | 92.72 грн |
| T3050H-6I |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; TO220ABIns; Igt: 50mA; Ifsm: 284A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: TO220ABIns
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 30A; TO220ABIns; Igt: 50mA; Ifsm: 284A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: TO220ABIns
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
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| T3050H-6G |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
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| T3050H-6G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 50mA; Ifsm: 284A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 30A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 284A
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
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| BULD118D-1 |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 2A; 20W; TO251
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 2A
Power dissipation: 20W
Case: TO251
Mounting: THT
Kind of package: tube
Current gain: 50
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 2A; 20W; TO251
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 2A
Power dissipation: 20W
Case: TO251
Mounting: THT
Kind of package: tube
Current gain: 50
на замовлення 108 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 62.84 грн |
| 10+ | 45.64 грн |
| 25+ | 39.48 грн |
| 75+ | 32.85 грн |
| SM6T220CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 220V; 2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Case: SMB
Mounting: SMD
Leakage current: 1µA
Max. forward impulse current: 2A
Tolerance: ±5%
Max. off-state voltage: 188V
Breakdown voltage: 220V
Semiconductor structure: bidirectional
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 220V; 2A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Case: SMB
Mounting: SMD
Leakage current: 1µA
Max. forward impulse current: 2A
Tolerance: ±5%
Max. off-state voltage: 188V
Breakdown voltage: 220V
Semiconductor structure: bidirectional
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
на замовлення 2012 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.32 грн |
| 13+ | 31.17 грн |
| 15+ | 27.81 грн |
| 50+ | 21.02 грн |
| 100+ | 18.54 грн |
| 250+ | 15.67 грн |
| 500+ | 13.83 грн |
| 1000+ | 12.15 грн |
| STM32H725ZET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 97
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 512kB FLASH; 564kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 97
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 512kB FLASH; 564kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
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| STM32H733ZGT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 564kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; LQFP144; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 564kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.



















