Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (162676) > Сторінка 331 з 2712
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STEVAL-ILL028V1 | STMicroelectronics |
Description: EVAL BOARD FOR STP1612PW05Packaging: Box Voltage - Input: 7.5V ~ 18V Utilized IC / Part: STP1612PW05 Supplied Contents: Board(s) Outputs and Type: 16 Non-Isolated Outputs Contents: Board(s) |
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STEVAL-ISA096V1 | STMicroelectronics |
Description: EVAL BOARD FOR VIPER06Packaging: Box Voltage - Output: 12V Voltage - Input: 85 ~ 264 VAC Current - Output: 150mA Regulator Topology: Buck-Boost Board Type: Fully Populated Utilized IC / Part: VIPer06 Supplied Contents: Board(s) Main Purpose: AC/DC, Non-Isolated Outputs and Type: 1 Non-Isolated Output Part Status: Active Power - Output: 2W Contents: Board(s) |
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STEVAL-MKI106V1 | STMicroelectronics |
Description: DIL24 ADAPTER BOARD LSM303DLHCPackaging: Box Sensitivity: 1 ~ 12mg/LSB, ±1%FS/gauss Interface: I2C, Serial Voltage - Supply: 2.16V ~ 3.6V Sensor Type: Accelerometer, Magnetometer Utilized IC / Part: LSM303DLHC Supplied Contents: Board(s) Embedded: No Sensing Range: ±2g, 4g, 8g, 16g, ±1.3 ~ 8.1 gauss Part Status: Obsolete Function: Accelerometer, Magnetometer Type: Sensor Contents: Board(s) Platform: Professional MEMS Tool |
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STEVAL-MKI126V1 | STMicroelectronics |
Description: EVAL BRD FOR MP45DT02 STA321MPLPackaging: Box Function: MEMS Omnidirectional Microphones Type: Audio Utilized IC / Part: MP45DT02, STA321MPL Supplied Contents: Board(s) Contents: Board(s) Secondary Attributes: Digital Output |
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STEVAL-MKI126V3 | STMicroelectronics |
Description: BOARD EVAL MEMS MIC MP34DT01Packaging: Box Function: MEMS Omnidirectional Microphones Type: Audio Utilized IC / Part: MP34DT01, STA321MPL Supplied Contents: Board(s) Primary Attributes: Digital Output Part Status: Obsolete |
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ACS108-8SA-TR | STMicroelectronics |
Description: TRIAC SENS GATE 800V 0.45A TO92Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -30°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 13.7A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92 Part Status: Active Current - On State (It (RMS)) (Max): 450 mA Voltage - Off State: 800 V |
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STP36N55M5 | STMicroelectronics |
Description: MOSFET N-CH 550V 33A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 100 V |
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ACS108-8SN-TR | STMicroelectronics |
Description: TRIAC SENS GATE 800V 0.8A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -30°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 13.7A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SOT-223 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 800 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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DSL02-008SC5 | STMicroelectronics |
Description: TVS DIODE 8VWM 22VC SOT235Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 24A (8/20µs) Voltage - Reverse Standoff (Typ): 8V Supplier Device Package: SOT-23-5 Bidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 22V Power Line Protection: No |
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ESDA14V2LY | STMicroelectronics |
Description: TVS DIODE 12VWM 21VC SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 14A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: SOT-23-3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 14.2V Voltage - Clamping (Max) @ Ipp: 21V Power - Peak Pulse: 300W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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STPS160UY | STMicroelectronics |
Description: DIODE SCHOTTKY 60V 1A SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A Current - Reverse Leakage @ Vr: 4 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STPS40L45CGY-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 45V 20A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A Current - Reverse Leakage @ Vr: 600 µA @ 45 V Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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ESDA5V3LY | STMicroelectronics |
Description: TVS DIODE 3VWM 19VC SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 25A (8/20µs) Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: SOT-23-3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 19V Power - Peak Pulse: 300W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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STPS5045SG-TR | STMicroelectronics |
Description: DIODE SCHOTTKY 45V 50A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 50A Supplier Device Package: D2PAK Operating Temperature - Junction: 200°C (Max) Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 50 A Current - Reverse Leakage @ Vr: 360 µA @ 45 V |
на замовлення 32000 шт: термін постачання 21-31 дні (днів) |
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ESDA6V1LY | STMicroelectronics |
Description: TVS DIODE 5.2VWM 16VC SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 18A (8/20µs) Voltage - Reverse Standoff (Typ): 5.2V Supplier Device Package: SOT-23-3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.1V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 300W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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STTH200W04TV1 | STMicroelectronics |
Description: DIODE MODULE GP 400V 100A ISOTOPPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: ISOTOP Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A Current - Reverse Leakage @ Vr: 40 µA @ 400 V |
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STTH3010GY-TR | STMicroelectronics |
Description: DIODE STANDARD 1000V 30A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 1000 V Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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ESDCAN24-2BLY | STMicroelectronics |
Description: TVS DIODE 24VWM 40VC SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 150°C (TJ) Applications: CAN Capacitance @ Frequency: 30pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-23-3 Bidirectional Channels: 2 Voltage - Breakdown (Min): 26.2V Voltage - Clamping (Max) @ Ipp: 40V Power - Peak Pulse: 230W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
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STTH3010WY | STMicroelectronics |
Description: DIODE STANDARD 1000V 30APackaging: Tube Package / Case: DO-247-2 (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 30A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 1000 V Qualification: AEC-Q101 |
на замовлення 336 шт: термін постачання 21-31 дні (днів) |
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STB150N3LH6 | STMicroelectronics |
Description: MOSFET N CH 30V 80A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STW18N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 15A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V |
на замовлення 625 шт: термін постачання 21-31 дні (днів) |
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STB32NM50N | STMicroelectronics |
Description: MOSFET N CH 500V 22A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STW32NM50N | STMicroelectronics |
Description: MOSFET N CH 500V 22A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V |
на замовлення 570 шт: термін постачання 21-31 дні (днів) |
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STD3N40K3 | STMicroelectronics |
Description: MOSFET N CH 400V 2A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 900mA, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STW36N55M5 | STMicroelectronics |
Description: MOSFET N-CH 550V 33A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STF32NM50N | STMicroelectronics |
Description: MOSFET N CH 500V 22A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STW56NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 45A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 22.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STFI13N95K3 | STMicroelectronics |
Description: MOSFET N CH 950V 10A I2PAKFP |
на замовлення 290 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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STW60NM50N | STMicroelectronics |
Description: MOSFET N-CH 500V 68A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 34A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STW62NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 65A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 32.5A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 100 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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STFI6N62K3 | STMicroelectronics |
Description: MOSFET N CH 620V 5.5A I2PAKFPPackaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-281 (I2PAKFP) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STY100NM60N | STMicroelectronics |
Description: MOSFET N CH 600V 98A MAX247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 49A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: MAX247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 50 V |
на замовлення 578 шт: термін постачання 21-31 дні (днів) |
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STGFW35HF60W | STMicroelectronics |
Description: IGBT 600V 36A 88W TO3PFPackaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-3PF Td (on/off) @ 25°C: 30ns/175ns Switching Energy: 290µJ (on), 185µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 140 nC Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 88 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STY105NM50N | STMicroelectronics |
Description: MOSFET N-CH 500V 110A MAX247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: MAX247™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 100 V |
на замовлення 572 шт: термін постачання 21-31 дні (днів) |
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STH240N75F3-2 | STMicroelectronics |
Description: MOSFET N CH 75V 180A H2PAK-2Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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T1620T-8I | STMicroelectronics |
Description: TRIAC ALTERNISTOR 800V 16A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 25 mA Current - Gate Trigger (Igt) (Max): 20 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-220 Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 800 V |
на замовлення 1995 шт: термін постачання 21-31 дні (днів) |
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STI18N65M5 | STMicroelectronics |
Description: MOSFET N CH 650V 15A I2PAKPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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T1635T-8I | STMicroelectronics |
Description: TRIAC ALTERNSTR 800V 16A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 45 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-220AB Insulated Part Status: Active Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 800 V |
на замовлення 1633 шт: термін постачання 21-31 дні (днів) |
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STL100N6LF6 | STMicroelectronics |
Description: MOSFET N CH 60V 100A PWRFLAT 5X6Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 11A, 10V Power Dissipation (Max): 4.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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USBP01-5M8 | STMicroelectronics |
Description: TVS DIODE 3VWM 8UQFN Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 200MHz ~ 3GHz Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: 8-µQFN (1.7x1.35) Unidirectional Channels: 5 Power - Peak Pulse: 200W Power Line Protection: Yes |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STP32NM50N | STMicroelectronics |
Description: MOSFET N CH 500V 22A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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STPS160UY | STMicroelectronics |
Description: DIODE SCHOTTKY 60V 1A SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A Current - Reverse Leakage @ Vr: 4 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 6500 шт: термін постачання 21-31 дні (днів) |
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STD3N40K3 | STMicroelectronics |
Description: MOSFET N CH 400V 2A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 900mA, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STB32NM50N | STMicroelectronics |
Description: MOSFET N CH 500V 22A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V |
на замовлення 971 шт: термін постачання 21-31 дні (днів) |
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STH240N75F3-2 | STMicroelectronics |
Description: MOSFET N CH 75V 180A H2PAK-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V |
на замовлення 89 шт: термін постачання 21-31 дні (днів) |
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STPS40L45CGY-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 45V 20A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A Current - Reverse Leakage @ Vr: 600 µA @ 45 V Qualification: AEC-Q101 |
на замовлення 8503 шт: термін постачання 21-31 дні (днів) |
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STPS5045SG-TR | STMicroelectronics |
Description: DIODE SCHOTTKY 45V 50A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 50A Supplier Device Package: D2PAK Operating Temperature - Junction: 200°C (Max) Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 50 A Current - Reverse Leakage @ Vr: 360 µA @ 45 V |
на замовлення 32606 шт: термін постачання 21-31 дні (днів) |
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STTH3010GY-TR | STMicroelectronics |
Description: DIODE STANDARD 1000V 30A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 1000 V Qualification: AEC-Q101 |
на замовлення 1845 шт: термін постачання 21-31 дні (днів) |
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ACS108-8SA-TR | STMicroelectronics |
Description: TRIAC SENS GATE 800V 0.45A TO92Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -30°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 13.7A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92 Part Status: Active Current - On State (It (RMS)) (Max): 450 mA Voltage - Off State: 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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ESDA6V1LY | STMicroelectronics |
Description: TVS DIODE 5.2VWM 16VC SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 18A (8/20µs) Voltage - Reverse Standoff (Typ): 5.2V Supplier Device Package: SOT-23-3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.1V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 300W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 5334 шт: термін постачання 21-31 дні (днів) |
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ESDCAN24-2BLY | STMicroelectronics |
Description: TVS DIODE 24VWM 40VC SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 150°C (TJ) Applications: CAN Capacitance @ Frequency: 30pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.5A (8/20µs) Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SOT-23-3 Bidirectional Channels: 2 Voltage - Breakdown (Min): 26.2V Voltage - Clamping (Max) @ Ipp: 40V Power - Peak Pulse: 230W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 1658 шт: термін постачання 21-31 дні (днів) |
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ACS108-8SN-TR | STMicroelectronics |
Description: TRIAC SENS GATE 800V 0.8A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -30°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 13.7A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SOT-223 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 800 V |
на замовлення 8180 шт: термін постачання 21-31 дні (днів) |
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ESDA14V2LY | STMicroelectronics |
Description: TVS DIODE 12VWM 21VC SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 14A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: SOT-23-3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 14.2V Voltage - Clamping (Max) @ Ipp: 21V Power - Peak Pulse: 300W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 16686 шт: термін постачання 21-31 дні (днів) |
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ESDA5V3LY | STMicroelectronics |
Description: TVS DIODE 3VWM 19VC SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 25A (8/20µs) Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: SOT-23-3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 19V Power - Peak Pulse: 300W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 23549 шт: термін постачання 21-31 дні (днів) |
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STPS8L30DEE-TR | STMicroelectronics |
Description: DIODE SCHOTTKY 30V 8A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: PowerFlat™ (3.3x3.3) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
на замовлення 3678 шт: термін постачання 21-31 дні (днів) |
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STPS1045DEE-TR | STMicroelectronics |
Description: DIODE SCHOTTKY 45V 10A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: PowerFlat™ (3.3x3.3) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V |
на замовлення 57079 шт: термін постачання 21-31 дні (днів) |
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STPS6M100DEE-TR | STMicroelectronics |
Description: DIODE SCHOTTKY 100V 6A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 6A Supplier Device Package: PowerFlat™ (3.3x3.3) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 100 V |
на замовлення 13235 шт: термін постачання 21-31 дні (днів) |
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STPS8H100DEE-TR | STMicroelectronics |
Description: DIODE SCHOTTKY 100V 8A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: PowerFlat™ (3.3x3.3) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 8 A Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V |
на замовлення 15197 шт: термін постачання 21-31 дні (днів) |
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STPS8170DEE-TR | STMicroelectronics |
Description: DIODE SCHOTTKY 170V 8A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: PowerFlat™ (3.3x3.3) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Current - Reverse Leakage @ Vr: 15 µA @ 170 V |
на замовлення 9306 шт: термін постачання 21-31 дні (днів) |
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STTH4R06DEE-TR | STMicroelectronics |
Description: DIODE GEN PURP 600V 4A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: PowerFlat™ (3.3x3.3) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. |
| STEVAL-ILL028V1 |
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Виробник: STMicroelectronics
Description: EVAL BOARD FOR STP1612PW05
Packaging: Box
Voltage - Input: 7.5V ~ 18V
Utilized IC / Part: STP1612PW05
Supplied Contents: Board(s)
Outputs and Type: 16 Non-Isolated Outputs
Contents: Board(s)
Description: EVAL BOARD FOR STP1612PW05
Packaging: Box
Voltage - Input: 7.5V ~ 18V
Utilized IC / Part: STP1612PW05
Supplied Contents: Board(s)
Outputs and Type: 16 Non-Isolated Outputs
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| STEVAL-ISA096V1 |
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Виробник: STMicroelectronics
Description: EVAL BOARD FOR VIPER06
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 150mA
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: VIPer06
Supplied Contents: Board(s)
Main Purpose: AC/DC, Non-Isolated
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 2W
Contents: Board(s)
Description: EVAL BOARD FOR VIPER06
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 150mA
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: VIPer06
Supplied Contents: Board(s)
Main Purpose: AC/DC, Non-Isolated
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 2W
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| STEVAL-MKI106V1 |
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Виробник: STMicroelectronics
Description: DIL24 ADAPTER BOARD LSM303DLHC
Packaging: Box
Sensitivity: 1 ~ 12mg/LSB, ±1%FS/gauss
Interface: I2C, Serial
Voltage - Supply: 2.16V ~ 3.6V
Sensor Type: Accelerometer, Magnetometer
Utilized IC / Part: LSM303DLHC
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±2g, 4g, 8g, 16g, ±1.3 ~ 8.1 gauss
Part Status: Obsolete
Function: Accelerometer, Magnetometer
Type: Sensor
Contents: Board(s)
Platform: Professional MEMS Tool
Description: DIL24 ADAPTER BOARD LSM303DLHC
Packaging: Box
Sensitivity: 1 ~ 12mg/LSB, ±1%FS/gauss
Interface: I2C, Serial
Voltage - Supply: 2.16V ~ 3.6V
Sensor Type: Accelerometer, Magnetometer
Utilized IC / Part: LSM303DLHC
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±2g, 4g, 8g, 16g, ±1.3 ~ 8.1 gauss
Part Status: Obsolete
Function: Accelerometer, Magnetometer
Type: Sensor
Contents: Board(s)
Platform: Professional MEMS Tool
товару немає в наявності
В кошику
од. на суму грн.
| STEVAL-MKI126V1 |
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Виробник: STMicroelectronics
Description: EVAL BRD FOR MP45DT02 STA321MPL
Packaging: Box
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP45DT02, STA321MPL
Supplied Contents: Board(s)
Contents: Board(s)
Secondary Attributes: Digital Output
Description: EVAL BRD FOR MP45DT02 STA321MPL
Packaging: Box
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP45DT02, STA321MPL
Supplied Contents: Board(s)
Contents: Board(s)
Secondary Attributes: Digital Output
товару немає в наявності
В кошику
од. на суму грн.
| STEVAL-MKI126V3 |
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Виробник: STMicroelectronics
Description: BOARD EVAL MEMS MIC MP34DT01
Packaging: Box
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP34DT01, STA321MPL
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Obsolete
Description: BOARD EVAL MEMS MIC MP34DT01
Packaging: Box
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP34DT01, STA321MPL
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Obsolete
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| ACS108-8SA-TR |
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Виробник: STMicroelectronics
Description: TRIAC SENS GATE 800V 0.45A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -30°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 13.7A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92
Part Status: Active
Current - On State (It (RMS)) (Max): 450 mA
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 0.45A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -30°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 13.7A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92
Part Status: Active
Current - On State (It (RMS)) (Max): 450 mA
Voltage - Off State: 800 V
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| STP36N55M5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 550V 33A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 100 V
Description: MOSFET N-CH 550V 33A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 100 V
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| ACS108-8SN-TR |
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Виробник: STMicroelectronics
Description: TRIAC SENS GATE 800V 0.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -30°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 13.7A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 0.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -30°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 13.7A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 18.48 грн |
| 2000+ | 16.17 грн |
| 3000+ | 15.35 грн |
| 5000+ | 13.53 грн |
| 7000+ | 13.01 грн |
| DSL02-008SC5 |
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Виробник: STMicroelectronics
Description: TVS DIODE 8VWM 22VC SOT235
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: SOT-23-5
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 22V
Power Line Protection: No
Description: TVS DIODE 8VWM 22VC SOT235
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: SOT-23-5
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 22V
Power Line Protection: No
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| ESDA14V2LY |
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Виробник: STMicroelectronics
Description: TVS DIODE 12VWM 21VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.2V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 21VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.2V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.68 грн |
| STPS160UY |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 60V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 7.08 грн |
| 5000+ | 6.21 грн |
| STPS40L45CGY-TR |
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Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 45V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 45V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 70.52 грн |
| 2000+ | 61.82 грн |
| 3000+ | 58.69 грн |
| ESDA5V3LY |
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Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 19VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 3VWM 19VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.71 грн |
| 6000+ | 6.39 грн |
| 9000+ | 6.35 грн |
| STPS5045SG-TR |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 45V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 50A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 200°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 50 A
Current - Reverse Leakage @ Vr: 360 µA @ 45 V
Description: DIODE SCHOTTKY 45V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 50A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 200°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 50 A
Current - Reverse Leakage @ Vr: 360 µA @ 45 V
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 54.69 грн |
| 2000+ | 47.14 грн |
| ESDA6V1LY |
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Виробник: STMicroelectronics
Description: TVS DIODE 5.2VWM 16VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.2V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 5.2VWM 16VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.2V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.10 грн |
| STTH200W04TV1 |
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Виробник: STMicroelectronics
Description: DIODE MODULE GP 400V 100A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ISOTOP
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
Current - Reverse Leakage @ Vr: 40 µA @ 400 V
Description: DIODE MODULE GP 400V 100A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: ISOTOP
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
Current - Reverse Leakage @ Vr: 40 µA @ 400 V
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| STTH3010GY-TR |
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Виробник: STMicroelectronics
Description: DIODE STANDARD 1000V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 91.57 грн |
| ESDCAN24-2BLY |
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Виробник: STMicroelectronics
Description: TVS DIODE 24VWM 40VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 40VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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| STTH3010WY |
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Виробник: STMicroelectronics
Description: DIODE STANDARD 1000V 30A
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 30A
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 336 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 284.99 грн |
| 30+ | 111.33 грн |
| 120+ | 110.25 грн |
| STB150N3LH6 |
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Виробник: STMicroelectronics
Description: MOSFET N CH 30V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Description: MOSFET N CH 30V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
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| STW18N65M5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Description: MOSFET N-CH 650V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
на замовлення 625 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 316.08 грн |
| 30+ | 168.26 грн |
| 120+ | 138.24 грн |
| 510+ | 109.07 грн |
| STB32NM50N |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 500V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V
Description: MOSFET N CH 500V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V
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| STW32NM50N |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 500V 22A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V
Description: MOSFET N CH 500V 22A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V
на замовлення 570 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 633.02 грн |
| 30+ | 330.37 грн |
| 120+ | 282.65 грн |
| 510+ | 241.96 грн |
| STD3N40K3 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 400V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 900mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
Description: MOSFET N CH 400V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 900mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
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| STW36N55M5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 550V 33A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
Description: MOSFET N-CH 550V 33A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
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| STF32NM50N |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 500V 22A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V
Description: MOSFET N CH 500V 22A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V
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| STW56NM60N |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 45A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 50 V
Description: MOSFET N-CH 600V 45A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 50 V
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| STFI13N95K3 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 950V 10A I2PAKFP
Description: MOSFET N CH 950V 10A I2PAKFP
на замовлення 290 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STW60NM50N |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 34A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 100 V
Description: MOSFET N-CH 500V 68A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 34A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 100 V
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| STW62NM60N |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 65A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 32.5A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 100 V
Description: MOSFET N-CH 600V 65A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 32.5A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 100 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 943.92 грн |
| STFI6N62K3 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 620V 5.5A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V
Description: MOSFET N CH 620V 5.5A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V
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| STY100NM60N |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 600V 98A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 49A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MAX247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 50 V
Description: MOSFET N CH 600V 98A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 49A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MAX247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 50 V
на замовлення 578 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1763.48 грн |
| 30+ | 1233.18 грн |
| STGFW35HF60W |
![]() |
Виробник: STMicroelectronics
Description: IGBT 600V 36A 88W TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 30ns/175ns
Switching Energy: 290µJ (on), 185µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 88 W
Description: IGBT 600V 36A 88W TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 30ns/175ns
Switching Energy: 290µJ (on), 185µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 88 W
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| STY105NM50N |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 110A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MAX247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 100 V
Description: MOSFET N-CH 500V 110A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MAX247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 100 V
на замовлення 572 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1950.02 грн |
| 30+ | 1208.09 грн |
| 120+ | 1140.70 грн |
| STH240N75F3-2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 75V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Description: MOSFET N CH 75V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
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| T1620T-8I |
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Виробник: STMicroelectronics
Description: TRIAC ALTERNISTOR 800V 16A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNISTOR 800V 16A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
на замовлення 1995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 108.81 грн |
| 50+ | 54.69 грн |
| 100+ | 49.41 грн |
| 500+ | 37.50 грн |
| 1000+ | 34.60 грн |
| STI18N65M5 |
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Виробник: STMicroelectronics
Description: MOSFET N CH 650V 15A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Description: MOSFET N CH 650V 15A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
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| T1635T-8I |
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Виробник: STMicroelectronics
Description: TRIAC ALTERNSTR 800V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 45 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220AB Insulated
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
Description: TRIAC ALTERNSTR 800V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 45 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220AB Insulated
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
на замовлення 1633 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 145.95 грн |
| 50+ | 67.34 грн |
| 100+ | 60.14 грн |
| 500+ | 44.59 грн |
| 1000+ | 40.77 грн |
| STL100N6LF6 |
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Виробник: STMicroelectronics
Description: MOSFET N CH 60V 100A PWRFLAT 5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 11A, 10V
Power Dissipation (Max): 4.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
Description: MOSFET N CH 60V 100A PWRFLAT 5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 11A, 10V
Power Dissipation (Max): 4.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
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| USBP01-5M8 |
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 8UQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 200MHz ~ 3GHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 8-µQFN (1.7x1.35)
Unidirectional Channels: 5
Power - Peak Pulse: 200W
Power Line Protection: Yes
Description: TVS DIODE 3VWM 8UQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 200MHz ~ 3GHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 8-µQFN (1.7x1.35)
Unidirectional Channels: 5
Power - Peak Pulse: 200W
Power Line Protection: Yes
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| STP32NM50N |
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Виробник: STMicroelectronics
Description: MOSFET N CH 500V 22A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V
Description: MOSFET N CH 500V 22A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 584.66 грн |
| STPS160UY |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 60V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.73 грн |
| 17+ | 20.04 грн |
| 100+ | 15.45 грн |
| 500+ | 10.92 грн |
| 1000+ | 9.76 грн |
| STD3N40K3 |
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Виробник: STMicroelectronics
Description: MOSFET N CH 400V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 900mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
Description: MOSFET N CH 400V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 900mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
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| STB32NM50N |
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Виробник: STMicroelectronics
Description: MOSFET N CH 500V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V
Description: MOSFET N CH 500V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V
на замовлення 971 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 385.17 грн |
| 10+ | 246.33 грн |
| 100+ | 175.83 грн |
| 500+ | 157.49 грн |
| STH240N75F3-2 |
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Виробник: STMicroelectronics
Description: MOSFET N CH 75V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Description: MOSFET N CH 75V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
на замовлення 89 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 500.03 грн |
| 10+ | 404.08 грн |
| STPS40L45CGY-TR |
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Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 45V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 45V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
Qualification: AEC-Q101
на замовлення 8503 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 202.95 грн |
| 10+ | 128.07 грн |
| 100+ | 88.08 грн |
| 500+ | 67.71 грн |
| STPS5045SG-TR |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 45V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 50A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 200°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 50 A
Current - Reverse Leakage @ Vr: 360 µA @ 45 V
Description: DIODE SCHOTTKY 45V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 50A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 200°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 50 A
Current - Reverse Leakage @ Vr: 360 µA @ 45 V
на замовлення 32606 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 164.08 грн |
| 10+ | 101.29 грн |
| 100+ | 73.82 грн |
| 500+ | 55.43 грн |
| STTH3010GY-TR |
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Виробник: STMicroelectronics
Description: DIODE STANDARD 1000V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 1845 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 246.13 грн |
| 10+ | 154.60 грн |
| 100+ | 107.42 грн |
| 500+ | 86.23 грн |
| ACS108-8SA-TR |
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Виробник: STMicroelectronics
Description: TRIAC SENS GATE 800V 0.45A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -30°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 13.7A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92
Part Status: Active
Current - On State (It (RMS)) (Max): 450 mA
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 0.45A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -30°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 13.7A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92
Part Status: Active
Current - On State (It (RMS)) (Max): 450 mA
Voltage - Off State: 800 V
товару немає в наявності
В кошику
од. на суму грн.
| ESDA6V1LY |
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Виробник: STMicroelectronics
Description: TVS DIODE 5.2VWM 16VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.2V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 5.2VWM 16VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 18A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.2V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 5334 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.91 грн |
| 17+ | 19.63 грн |
| 100+ | 11.78 грн |
| 500+ | 9.77 грн |
| 1000+ | 6.95 грн |
| ESDCAN24-2BLY |
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Виробник: STMicroelectronics
Description: TVS DIODE 24VWM 40VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 40VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: CAN
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 1658 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 25.04 грн |
| 24+ | 14.22 грн |
| 100+ | 8.55 грн |
| 500+ | 7.62 грн |
| 1000+ | 6.67 грн |
| ACS108-8SN-TR |
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Виробник: STMicroelectronics
Description: TRIAC SENS GATE 800V 0.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -30°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 13.7A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 0.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -30°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 13.7A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 8180 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 65.63 грн |
| 10+ | 39.58 грн |
| 100+ | 25.70 грн |
| 500+ | 18.51 грн |
| ESDA14V2LY |
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Виробник: STMicroelectronics
Description: TVS DIODE 12VWM 21VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.2V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 21VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.2V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 16686 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.77 грн |
| 48+ | 7.07 грн |
| ESDA5V3LY |
![]() |
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 19VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 3VWM 19VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 23549 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.23 грн |
| 15+ | 23.04 грн |
| 100+ | 13.79 грн |
| 500+ | 11.10 грн |
| 1000+ | 7.48 грн |
| STPS8L30DEE-TR |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 30V 8A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerFlat™ (3.3x3.3)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 8A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerFlat™ (3.3x3.3)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
на замовлення 3678 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 85.50 грн |
| 10+ | 53.22 грн |
| 100+ | 50.22 грн |
| 500+ | 38.50 грн |
| 1000+ | 36.00 грн |
| STPS1045DEE-TR |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 45V 10A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerFlat™ (3.3x3.3)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerFlat™ (3.3x3.3)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
на замовлення 57079 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.63 грн |
| 10+ | 74.60 грн |
| 100+ | 49.83 грн |
| 500+ | 36.81 грн |
| 1000+ | 33.61 грн |
| STPS6M100DEE-TR |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 100V 6A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: PowerFlat™ (3.3x3.3)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
Description: DIODE SCHOTTKY 100V 6A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: PowerFlat™ (3.3x3.3)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
на замовлення 13235 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.22 грн |
| 10+ | 72.52 грн |
| 100+ | 54.57 грн |
| 500+ | 40.46 грн |
| 1000+ | 37.00 грн |
| STPS8H100DEE-TR |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 100V 8A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerFlat™ (3.3x3.3)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerFlat™ (3.3x3.3)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 8 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
на замовлення 15197 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 126.95 грн |
| 10+ | 78.26 грн |
| 100+ | 55.78 грн |
| 500+ | 41.39 грн |
| 1000+ | 37.95 грн |
| STPS8170DEE-TR |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 170V 8A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerFlat™ (3.3x3.3)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 170 V
Description: DIODE SCHOTTKY 170V 8A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerFlat™ (3.3x3.3)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 170 V
на замовлення 9306 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 63.04 грн |
| 10+ | 39.92 грн |
| 100+ | 38.45 грн |
| 500+ | 35.08 грн |
| STTH4R06DEE-TR |
Виробник: STMicroelectronics
Description: DIODE GEN PURP 600V 4A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerFlat™ (3.3x3.3)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE GEN PURP 600V 4A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerFlat™ (3.3x3.3)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.

























