Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (162719) > Сторінка 334 з 2712
| Фото | Назва | Виробник | Інформація |
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STB15N80K5 | STMicroelectronics |
Description: MOSFET N CH 800V 14A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
на замовлення 951 шт: термін постачання 21-31 дні (днів) |
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STTH2003CGY-TR | STMicroelectronics |
Description: DIODE ARRAY GP 300V 10A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 300 V |
на замовлення 1005 шт: термін постачання 21-31 дні (днів) |
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STD10P6F6 | STMicroelectronics |
Description: MOSFET P CH 60V 10A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V |
на замовлення 1977 шт: термін постачання 21-31 дні (днів) |
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STD65N3LLH5 | STMicroelectronics |
Description: MOSFET N CH 30V 65A DPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STD9NM40N | STMicroelectronics |
Description: MOSFET N-CH 400V 5.6A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STTH810GY-TR | STMicroelectronics |
Description: DIODE STANDARD 1000V 8A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| STL10DN15F3 | STMicroelectronics |
Description: MOSFET 2N-CH 150V 10A POWERFLAT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STL10DN15F3 | STMicroelectronics |
Description: MOSFET 2N-CH 150V 10A POWERFLAT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STN9360 | STMicroelectronics |
Description: TRANS PNP 600V 0.5A SOT-223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 1.6 W |
на замовлення 5057 шт: термін постачання 21-31 дні (днів) |
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STTH1003SBY-TR | STMicroelectronics |
Description: DIODE STANDARD 300V 10A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4962 шт: термін постачання 21-31 дні (днів) |
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STPS20L60CGY-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 60V 10A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A Current - Reverse Leakage @ Vr: 350 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 387 шт: термін постачання 21-31 дні (днів) |
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STF15N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 14A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STI34N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 28A I2PAKFPPackaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STB15N80K5 | STMicroelectronics |
Description: MOSFET N CH 800V 14A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STP15N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 14A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
на замовлення 444 шт: термін постачання 21-31 дні (днів) |
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| STL10DN15F3 | STMicroelectronics |
Description: MOSFET 2N-CH 150V 10A POWERFLAT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STPSC4H065D | STMicroelectronics |
Description: DIODE SCHOTTKY 650V 4A TO220AC |
на замовлення 1178 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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STPS340SY | STMicroelectronics |
Description: DIODE SCHOTTKY 40V 3A SMCPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A Current - Reverse Leakage @ Vr: 20 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8025 шт: термін постачання 21-31 дні (днів) |
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STPS340UY | STMicroelectronics |
Description: DIODE SCHOTTKY 40V 3A SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A Current - Reverse Leakage @ Vr: 20 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 593 шт: термін постачання 21-31 дні (днів) |
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STPSC10H065B-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 10A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STPSC10H065G-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 10A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPSC4H065B-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 4A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPSC8H065B-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 8A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 414pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STPSC8H065G-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 8A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 414pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPSC10H065D | STMicroelectronics |
Description: 650 V 10 A power Schottky silicoPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPSC20H065CW | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 650V TO247 |
на замовлення 195 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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STPSC8H065D | STMicroelectronics |
Description: DIODE SCHOTTKY 650V 8A TO220AC |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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STPSC10H065G-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 10A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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STPSC10H065B-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 10A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 4553 шт: термін постачання 21-31 дні (днів) |
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STPSC4H065B-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 4A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 926 шт: термін постачання 21-31 дні (днів) |
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STPSC8H065B-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 8A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 414pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
на замовлення 13528 шт: термін постачання 21-31 дні (днів) |
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STPSC8H065G-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 8A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 414pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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EV-VND5E160AJ | STMicroelectronics |
Description: BOARD EVAL FOR VND5E160AJPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VND5E160AJ Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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EV-VND5T100AJ | STMicroelectronics |
Description: BOARD EVAL FOR VND5T100AJPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VND5T100AJ Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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EV-VND5E050AJ | STMicroelectronics |
Description: BOARD EVAL FOR VND5E050AJPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VND5E050AJ Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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EV-VND5E160J | STMicroelectronics |
Description: EVAL BOARD FOR VND5E160JPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VND5E160J Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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EV-VN5E050J | STMicroelectronics |
Description: BOARD EVAL FOR VN5E050JPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VN5E050J Supplied Contents: Board(s) Primary Attributes: 1-Channel (Single) Part Status: Active |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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EV-VN5E050AJ | STMicroelectronics |
Description: BOARD EVAL FOR VN5E050AJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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EV-VN5E025AJ | STMicroelectronics |
Description: BOARD EVAL FOR VN5E025AJPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VN5E025AJ Supplied Contents: Board(s) Primary Attributes: 1-Channel (Single) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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EV-VND5E050K | STMicroelectronics |
Description: BOARD EVAL FOR VND5E050KPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VND5E050K Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) Part Status: Active |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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EV-VND5E050J | STMicroelectronics |
Description: BOARD EVAL FOR VND5E050JPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VND5E050J Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) Part Status: Active |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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EV-VN5016AJ | STMicroelectronics |
Description: EVAL BOARD FOR VN5016AJPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VN5016AJ Supplied Contents: Board(s) Primary Attributes: 1-Channel (Single) Part Status: Active Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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EV-VNQ5E050AK | STMicroelectronics |
Description: EVAL BOARD FOR VNQ5E050AKPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VNQ5E050AK Supplied Contents: Board(s) Primary Attributes: 4-Channel (Quad) Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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EV-VNQ5E160AK | STMicroelectronics |
Description: BOARD EVAL FOR VNQ5E160AKPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VNQ5E160AK Supplied Contents: Board(s) Primary Attributes: 4-Channel (Quad) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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EV-VND5E025AK | STMicroelectronics |
Description: EVAL BOARD FOR VND5E025AKPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VND5E025AK Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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EV-VND5T035AK | STMicroelectronics |
Description: EVAL BOARD FOR VND5T035AKPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VND5T035AK Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) Part Status: Active Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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EV-VNQ5027AK | STMicroelectronics |
Description: EVAL BOARD FOR VNQ5027AKPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VNQ5027AK Supplied Contents: Board(s) Primary Attributes: 4-Channel (Quad) Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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EV-VNQ5E050K | STMicroelectronics |
Description: BOARD EVAL FOR VNQ5E050KPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VNQ5E050K Supplied Contents: Board(s) Primary Attributes: 4-Channel (Quad) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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EV-VNQ5E160K | STMicroelectronics |
Description: BOARD EVAL FOR VNQ5E160KPackaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VNQ5E160K Supplied Contents: Board(s) Primary Attributes: 4-Channel (Quad) Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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EMIF03-SIM05F3 | STMicroelectronics |
Description: FILTER RC(PI) 47 OHMS ESD SMD Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLCSP Size / Dimension: 0.048" L x 0.048" W (1.22mm x 1.22mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -30°C ~ 85°C Values: R = 47Ohms, 100Ohms, C = 12pF Height: 0.022" (0.55mm) Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Resistance - Channel (Ohms): 47, 100 ESD Protection: Yes Part Status: Obsolete Number of Channels: 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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74LCX00YTTR | STMicroelectronics |
Description: IC GATE NAND 4CH 2-INP 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 4.3ns @ 3.3V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 10 µA Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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74LCX07YMTR | STMicroelectronics |
Description: IC BUFFER NON-INVERT 3.6V 14SOPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: -, 24mA Supplier Device Package: 14-SO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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74LCX07YTTR | STMicroelectronics |
Description: IC BUF NON-INVERT 3.6V 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: -, 24mA Supplier Device Package: 14-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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74LCX125YMTR | STMicroelectronics |
Description: IC BUFFER NON-INVERT 3.6V 14-SOPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 14-SO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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74VHC14YMTR | STMicroelectronics |
Description: IC INVERT SCHMITT 6CH 1-INP 14SOPackaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 14-SO Input Logic Level - High: 2.2V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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74VHC14YTTR | STMicroelectronics |
Description: IC INVERTER 6CH 1-INP 14TSSOPPackaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2.2V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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L6482HTR | STMicroelectronics |
Description: IC MTR DRV BIPLR 3.3/5V 38HTSSOPPackaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Pre-Driver - Half Bridge (4) Voltage - Supply: 3.3V, 5V Applications: General Purpose Technology: Power MOSFET Supplier Device Package: 38-HTSSOP Motor Type - Stepper: Bipolar Step Resolution: 1 ~ 1/16 Part Status: Active |
на замовлення 2250 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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LDK120C11R | STMicroelectronics |
Description: IC REG LIN 1.1V 200MA SOT323-5Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-323-5 Voltage - Output (Min/Fixed): 1.1V Control Features: Enable Part Status: Active PSRR: 55dB (120Hz ~ 10kHz) Voltage Dropout (Max): 0.3V @ 200mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 100 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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LDK120C12R | STMicroelectronics |
Description: IC REG LIN 1.2V 200MA SOT323-5Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-323-5 Voltage - Output (Min/Fixed): 1.2V Control Features: Enable Part Status: Active PSRR: 55dB (120Hz ~ 10kHz) Voltage Dropout (Max): 0.3V @ 200mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 100 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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LDK120C15R | STMicroelectronics |
Description: IC REG LIN 1.5V 200MA SOT323-5Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-323-5 Voltage - Output (Min/Fixed): 1.5V Control Features: Enable Part Status: Active PSRR: 55dB (120Hz ~ 10kHz) Voltage Dropout (Max): 0.3V @ 200mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 100 µA |
товару немає в наявності |
В кошику од. на суму грн. |
| STB15N80K5 |
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Виробник: STMicroelectronics
Description: MOSFET N CH 800V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N CH 800V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
на замовлення 951 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 395.48 грн |
| 10+ | 279.78 грн |
| 100+ | 201.42 грн |
| 500+ | 186.15 грн |
| STTH2003CGY-TR |
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Виробник: STMicroelectronics
Description: DIODE ARRAY GP 300V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
Description: DIODE ARRAY GP 300V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
на замовлення 1005 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 211.96 грн |
| 10+ | 131.92 грн |
| 100+ | 90.92 грн |
| 500+ | 72.06 грн |
| STD10P6F6 |
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Виробник: STMicroelectronics
Description: MOSFET P CH 60V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Description: MOSFET P CH 60V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
на замовлення 1977 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 105.12 грн |
| 10+ | 63.89 грн |
| 100+ | 42.39 грн |
| 500+ | 31.11 грн |
| 1000+ | 28.32 грн |
| STD65N3LLH5 |
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Виробник: STMicroelectronics
Description: MOSFET N CH 30V 65A DPAK
Description: MOSFET N CH 30V 65A DPAK
товару немає в наявності
В кошику
од. на суму грн.
| STD9NM40N |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 400V 5.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
Description: MOSFET N-CH 400V 5.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| STTH810GY-TR |
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Виробник: STMicroelectronics
Description: DIODE STANDARD 1000V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| STL10DN15F3 |
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Виробник: STMicroelectronics
Description: MOSFET 2N-CH 150V 10A POWERFLAT
Description: MOSFET 2N-CH 150V 10A POWERFLAT
товару немає в наявності
В кошику
од. на суму грн.
| STL10DN15F3 |
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Виробник: STMicroelectronics
Description: MOSFET 2N-CH 150V 10A POWERFLAT
Description: MOSFET 2N-CH 150V 10A POWERFLAT
товару немає в наявності
В кошику
од. на суму грн.
| STN9360 |
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Виробник: STMicroelectronics
Description: TRANS PNP 600V 0.5A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1.6 W
Description: TRANS PNP 600V 0.5A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1.6 W
на замовлення 5057 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.24 грн |
| 10+ | 44.06 грн |
| 100+ | 28.75 грн |
| 500+ | 20.79 грн |
| STTH1003SBY-TR |
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Виробник: STMicroelectronics
Description: DIODE STANDARD 300V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 300V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4962 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.45 грн |
| 10+ | 42.48 грн |
| 100+ | 37.08 грн |
| 500+ | 27.05 грн |
| 1000+ | 24.56 грн |
| STPS20L60CGY-TR |
![]() |
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 60V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARRAY SCHOTT 60V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
Qualification: AEC-Q101
на замовлення 387 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.80 грн |
| 10+ | 82.39 грн |
| 100+ | 64.72 грн |
| STF15N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N-CH 800V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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| STI34N65M5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 28A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Description: MOSFET N-CH 650V 28A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
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| STB15N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N CH 800V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N CH 800V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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| STP15N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N-CH 800V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 411.85 грн |
| 50+ | 207.79 грн |
| 100+ | 189.56 грн |
| STL10DN15F3 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 150V 10A POWERFLAT
Description: MOSFET 2N-CH 150V 10A POWERFLAT
товару немає в наявності
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| STPSC4H065D |
![]() |
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 650V 4A TO220AC
Description: DIODE SCHOTTKY 650V 4A TO220AC
на замовлення 1178 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STPS340SY |
![]() |
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8025 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 54.28 грн |
| 11+ | 32.44 грн |
| 100+ | 20.82 грн |
| 500+ | 14.83 грн |
| 1000+ | 13.31 грн |
| STPS340UY |
![]() |
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 593 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 31.02 грн |
| 16+ | 20.99 грн |
| 100+ | 15.99 грн |
| 500+ | 11.32 грн |
| STPSC10H065B-TR |
![]() |
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 74.87 грн |
| STPSC10H065G-TR |
![]() |
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
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| STPSC4H065B-TR |
![]() |
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
товару немає в наявності
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| STPSC8H065B-TR |
![]() |
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 79.26 грн |
| STPSC8H065G-TR |
![]() |
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
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| STPSC10H065D |
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Виробник: STMicroelectronics
Description: 650 V 10 A power Schottky silico
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: 650 V 10 A power Schottky silico
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
товару немає в наявності
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| STPSC20H065CW |
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Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 650V TO247
Description: DIODE ARRAY SCHOTTKY 650V TO247
на замовлення 195 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STPSC8H065D |
![]() |
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 650V 8A TO220AC
Description: DIODE SCHOTTKY 650V 8A TO220AC
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STPSC10H065G-TR |
![]() |
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 323.97 грн |
| 10+ | 205.52 грн |
| 100+ | 145.03 грн |
| 500+ | 124.22 грн |
| STPSC10H065B-TR |
![]() |
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 4553 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 237.81 грн |
| 10+ | 149.18 грн |
| 100+ | 103.56 грн |
| 500+ | 82.82 грн |
| STPSC4H065B-TR |
![]() |
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 926 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 137.00 грн |
| 10+ | 109.44 грн |
| 100+ | 87.09 грн |
| 500+ | 69.15 грн |
| STPSC8H065B-TR |
![]() |
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
на замовлення 13528 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 243.84 грн |
| 10+ | 133.58 грн |
| 100+ | 108.55 грн |
| 500+ | 87.67 грн |
| STPSC8H065G-TR |
![]() |
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
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| EV-VND5E160AJ |
![]() |
Виробник: STMicroelectronics
Description: BOARD EVAL FOR VND5E160AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E160AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Description: BOARD EVAL FOR VND5E160AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E160AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
товару немає в наявності
В кошику
од. на суму грн.
| EV-VND5T100AJ |
![]() |
Виробник: STMicroelectronics
Description: BOARD EVAL FOR VND5T100AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5T100AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Description: BOARD EVAL FOR VND5T100AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5T100AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
товару немає в наявності
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од. на суму грн.
| EV-VND5E050AJ |
![]() |
Виробник: STMicroelectronics
Description: BOARD EVAL FOR VND5E050AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
Description: BOARD EVAL FOR VND5E050AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050AJ
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1041.70 грн |
| EV-VND5E160J |
![]() |
Виробник: STMicroelectronics
Description: EVAL BOARD FOR VND5E160J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E160J
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Contents: Board(s)
Description: EVAL BOARD FOR VND5E160J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E160J
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| EV-VN5E050J |
![]() |
Виробник: STMicroelectronics
Description: BOARD EVAL FOR VN5E050J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VN5E050J
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Part Status: Active
Description: BOARD EVAL FOR VN5E050J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VN5E050J
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1031.36 грн |
| EV-VN5E050AJ |
![]() |
Виробник: STMicroelectronics
Description: BOARD EVAL FOR VN5E050AJ
Description: BOARD EVAL FOR VN5E050AJ
товару немає в наявності
В кошику
од. на суму грн.
| EV-VN5E025AJ |
![]() |
Виробник: STMicroelectronics
Description: BOARD EVAL FOR VN5E025AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VN5E025AJ
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Part Status: Active
Description: BOARD EVAL FOR VN5E025AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VN5E025AJ
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| EV-VND5E050K |
![]() |
Виробник: STMicroelectronics
Description: BOARD EVAL FOR VND5E050K
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050K
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
Description: BOARD EVAL FOR VND5E050K
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050K
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1145.95 грн |
| EV-VND5E050J |
![]() |
Виробник: STMicroelectronics
Description: BOARD EVAL FOR VND5E050J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050J
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
Description: BOARD EVAL FOR VND5E050J
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E050J
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
на замовлення 14 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1041.70 грн |
| EV-VN5016AJ |
![]() |
Виробник: STMicroelectronics
Description: EVAL BOARD FOR VN5016AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VN5016AJ
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR VN5016AJ
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VN5016AJ
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Part Status: Active
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| EV-VNQ5E050AK |
![]() |
Виробник: STMicroelectronics
Description: EVAL BOARD FOR VNQ5E050AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNQ5E050AK
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Contents: Board(s)
Description: EVAL BOARD FOR VNQ5E050AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNQ5E050AK
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| EV-VNQ5E160AK |
![]() |
Виробник: STMicroelectronics
Description: BOARD EVAL FOR VNQ5E160AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNQ5E160AK
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Description: BOARD EVAL FOR VNQ5E160AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNQ5E160AK
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
товару немає в наявності
В кошику
од. на суму грн.
| EV-VND5E025AK |
![]() |
Виробник: STMicroelectronics
Description: EVAL BOARD FOR VND5E025AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E025AK
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Contents: Board(s)
Description: EVAL BOARD FOR VND5E025AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5E025AK
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| EV-VND5T035AK |
![]() |
Виробник: STMicroelectronics
Description: EVAL BOARD FOR VND5T035AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5T035AK
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR VND5T035AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VND5T035AK
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Part Status: Active
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1082.19 грн |
| EV-VNQ5027AK |
![]() |
Виробник: STMicroelectronics
Description: EVAL BOARD FOR VNQ5027AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNQ5027AK
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Contents: Board(s)
Description: EVAL BOARD FOR VNQ5027AK
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNQ5027AK
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| EV-VNQ5E050K |
![]() |
Виробник: STMicroelectronics
Description: BOARD EVAL FOR VNQ5E050K
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNQ5E050K
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Part Status: Active
Description: BOARD EVAL FOR VNQ5E050K
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNQ5E050K
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| EV-VNQ5E160K |
![]() |
Виробник: STMicroelectronics
Description: BOARD EVAL FOR VNQ5E160K
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNQ5E160K
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Part Status: Active
Description: BOARD EVAL FOR VNQ5E160K
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNQ5E160K
Supplied Contents: Board(s)
Primary Attributes: 4-Channel (Quad)
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1134.75 грн |
| EMIF03-SIM05F3 |
Виробник: STMicroelectronics
Description: FILTER RC(PI) 47 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Size / Dimension: 0.048" L x 0.048" W (1.22mm x 1.22mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 12pF
Height: 0.022" (0.55mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 3
Description: FILTER RC(PI) 47 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Size / Dimension: 0.048" L x 0.048" W (1.22mm x 1.22mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 12pF
Height: 0.022" (0.55mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 3
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| 74LCX00YTTR |
![]() |
Виробник: STMicroelectronics
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 4.3ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 4.3ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Grade: Automotive
Qualification: AEC-Q100
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од. на суму грн.
| 74LCX07YMTR |
![]() |
Виробник: STMicroelectronics
Description: IC BUFFER NON-INVERT 3.6V 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 14-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFFER NON-INVERT 3.6V 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 14-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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од. на суму грн.
| 74LCX07YTTR |
![]() |
Виробник: STMicroelectronics
Description: IC BUF NON-INVERT 3.6V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 14-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUF NON-INVERT 3.6V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 14-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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| 74LCX125YMTR |
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Виробник: STMicroelectronics
Description: IC BUFFER NON-INVERT 3.6V 14-SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFFER NON-INVERT 3.6V 14-SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 23.90 грн |
| 5000+ | 22.41 грн |
| 74VHC14YMTR |
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Виробник: STMicroelectronics
Description: IC INVERT SCHMITT 6CH 1-INP 14SO
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-SO
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC INVERT SCHMITT 6CH 1-INP 14SO
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-SO
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
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| 74VHC14YTTR |
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Виробник: STMicroelectronics
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
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| L6482HTR |
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Виробник: STMicroelectronics
Description: IC MTR DRV BIPLR 3.3/5V 38HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 3.3V, 5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 38-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/16
Part Status: Active
Description: IC MTR DRV BIPLR 3.3/5V 38HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (4)
Voltage - Supply: 3.3V, 5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 38-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/16
Part Status: Active
на замовлення 2250 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| LDK120C11R |
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Виробник: STMicroelectronics
Description: IC REG LIN 1.1V 200MA SOT323-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 100 µA
Description: IC REG LIN 1.1V 200MA SOT323-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.1V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 100 µA
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| LDK120C12R |
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Виробник: STMicroelectronics
Description: IC REG LIN 1.2V 200MA SOT323-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 100 µA
Description: IC REG LIN 1.2V 200MA SOT323-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 100 µA
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| LDK120C15R |
![]() |
Виробник: STMicroelectronics
Description: IC REG LIN 1.5V 200MA SOT323-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 100 µA
Description: IC REG LIN 1.5V 200MA SOT323-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Part Status: Active
PSRR: 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.3V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 100 µA
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