Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (165465) > Сторінка 2685 з 2758
| Фото | Назва | Виробник | Інформація |
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STF28N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 80A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STF24N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 64A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 64A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.23Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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BD243C | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 115V Collector current: 6A Case: TO220 Mounting: THT Frequency: 3MHz Power: 65W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STM8S003F3P6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: TSSOP20 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 128B EEPROM; 1kB RAM; 8kB FLASH Number of 16bit timers: 2 Number of 8bit timers: 1 Number of PWM channels: 3 Number of 10bit A/D converters: 5 Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STF10N65K3 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 42nC |
на замовлення 88 шт: термін постачання 21-30 дні (днів) |
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STF11N60DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 16.5nC |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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ULN2074B | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: driver; darlington,transistor array; DIP16; 1.5A; 50V; Ch: 4 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: DIP16 Output current: 1.5A Output voltage: 50V Number of channels: 4 Mounting: THT Operating temperature: -20...85°C Application: for inductive load Input voltage: 30V |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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P0102AL 5AA4 | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 100V; Ifmax: 0.25A; 0.16A; Igt: 200uA; SOT23-3; SMD Type of thyristor: thyristor Max. off-state voltage: 100V Max. load current: 0.25A Case: SOT23-3 Gate current: 0.2mA Mounting: SMD Kind of package: reel; tape Load current: 0.16A Max. forward impulse current: 7A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| STF12N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 36A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Pulsed drain current: 36A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.45Ω Mounting: THT Gate charge: 16nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STL40N10F7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 40A; 70W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Pulsed drain current: 40A Power dissipation: 70W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STF38N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 120A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 95mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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| STL24N60DM2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 60A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 60A Power dissipation: 125W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.22Ω Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STL24N60M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 72A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Pulsed drain current: 72A Power dissipation: 125W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STL24N60M6 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 52.5A; 109W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 52.5A Power dissipation: 109W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 209mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STF12N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 32A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 16.7nC Pulsed drain current: 32A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STF7N60DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 24A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.9Ω Mounting: THT Gate charge: 7.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STF7N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 20A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 20A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.95Ω Mounting: THT Gate charge: 8.8nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STL7N60M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 67W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 20A Power dissipation: 67W Case: PowerFLAT 5x5 Gate-source voltage: ±25V On-state resistance: 1.05Ω Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STP80N600K6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 15A; 86W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Pulsed drain current: 15A Power dissipation: 86W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 10.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STF11N60M2-EP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.5A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.595Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 30A Gate charge: 12.4nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STF7N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 20A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 1.15Ω Mounting: THT Gate charge: 9nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STF57N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 42A; Idm: 168A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 42A Pulsed drain current: 168A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 63mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SCTH40N120G2V-7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 100A; 238W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 100A Power dissipation: 238W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SCTH40N120G2V7AG | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 92A; 250W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 33A Pulsed drain current: 92A Power dissipation: 250W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SCTW40N120G2V | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 108A; 278W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 108A Power dissipation: 278W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 0.1Ω Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SCTWA40N120G2V | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 108A; 278W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 108A Power dissipation: 278W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 0.1Ω Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| SCTWA40N120G2V-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 107A; 277W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 107A Power dissipation: 277W Case: HIP247-4 Gate-source voltage: -10...22V On-state resistance: 0.1Ω Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STM8L151F3P3 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; TSSOP20; 1.65÷3.6VDC; Cmp: 2 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: TSSOP20 Supply voltage: 1.65...3.6V DC Interface: I2C; IrDA; SPI; USART Integrated circuit features: Beeper; IWDG; RTC; WWDG Memory: 256B EEPROM; 1kB RAM; 8kB FLASH Number of 12bit A/D converters: 10 Number of comparators: 2 Number of 16bit timers: 2 Number of 8bit timers: 1 Number of PWM channels: 3 Family: STM8L Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| STGB18N40LZT4 | STMicroelectronics |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 390V; 30A; 150W; D2PAK; automotive industry; ESD Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 30A Power dissipation: 150W Case: D2PAK Pulsed collector current: 40A Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Features of semiconductor devices: internally clamped Application: automotive industry Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STP10N105K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.05kV; 6A; Idm: 24A; 130W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 6A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 21.5nC Pulsed drain current: 24A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STL115N10F7AG | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 107A; Idm: 428A; 136W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 107A Pulsed drain current: 428A Power dissipation: 136W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 72.5nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STGW28IH125DF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.25kV; 30A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.25kV Collector current: 30A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 114nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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| STF10NM60ND | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 70W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 70W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 20nC Pulsed drain current: 32A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STF6N65K3 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 5.4A; Idm: 21.6A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.4A Pulsed drain current: 21.6A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STF6N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 1.35Ω Mounting: THT Gate charge: 9.8nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STF16N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 19.5nC Pulsed drain current: 44A |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
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| SCTW70N120G2V | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 91A; Idm: 274A; 547W Gate-source voltage: -10...22V Gate charge: 150nC On-state resistance: 30mΩ Mounting: THT Type of transistor: N-MOSFET Drain current: 91A Technology: SiC Case: HIP247™ Pulsed drain current: 274A Power dissipation: 547W Drain-source voltage: 1.2kV Kind of package: tube Kind of channel: enhancement Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STM32F103ZGT6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 72MHz; LQFP144; 2÷3.6VDC; -40÷85°C Family: STM32F1 Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Number of 12bit A/D converters: 3 Number of inputs/outputs: 112 Memory: 96kB SRAM; 1MB FLASH Kind of core: 32-bit Clock frequency: 72MHz Interface: CAN; I2C; SPI; UART; USART; USB Kind of architecture: Cortex M3 Integrated circuit features: DMA; LCD controller; PoR; PWM Case: LQFP144 Mounting: SMD Type of integrated circuit: STM32 ARM microcontroller |
на замовлення 490 шт: термін постачання 21-30 дні (днів) |
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| STD4N90K5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 3A; Idm: 12A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 3A Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 5.3nC Pulsed drain current: 12A Power dissipation: 60W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STF4N90K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 16A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 5.3nC Pulsed drain current: 16A Power dissipation: 20W |
на замовлення 97 шт: термін постачання 21-30 дні (днів) |
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| STF10N60DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 530mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 15nC Pulsed drain current: 32A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STF10N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.5A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 13.5nC Pulsed drain current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STF6N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 4.5A; Idm: 18A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.5A Pulsed drain current: 18A Power dissipation: 25W Case: TO220FP On-state resistance: 1.6Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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STF6N90K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 6A; Idm: 24A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 6A Pulsed drain current: 24A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.1Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement |
на замовлення 91 шт: термін постачання 21-30 дні (днів) |
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| STL45N65M5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 22.5A; Idm: 90A; 160W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22.5A Pulsed drain current: 90A Power dissipation: 160W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 86mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STF11N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 28A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 28A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.68Ω Mounting: THT Gate charge: 12.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STF11N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 36A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Pulsed drain current: 36A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.48Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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STF11NM60ND | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 30nC Pulsed drain current: 40A |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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| STL33N60DM2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 84A Power dissipation: 150W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STL33N60DM6 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 80A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 80A Power dissipation: 150W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STL33N60M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 88A Power dissipation: 150W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 135mΩ Mounting: SMD Gate charge: 45.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STL33N60M6 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 78A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 78A Power dissipation: 150W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 137mΩ Mounting: SMD Gate charge: 33.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| STP33N60M6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 78A; 190W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 78A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.125Ω Mounting: THT Gate charge: 33.4nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
L6219 | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; H-bridge; stepper motor controller; DIP24; 750mA; Ch: 4 Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: stepper motor controller Case: DIP24 Output current: 0.75A Number of channels: 4 Mounting: THT Operating temperature: -25...85°C Frequency: 0.1MHz Kind of package: tube Supply voltage: 10...46V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STM32L552RCT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 110MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 110MHz Mounting: SMD Number of inputs/outputs: 52 Case: LQFP64 Supply voltage: 1.71...3.6V DC Interface: CAN FD; GPIO; I2C; SAI; SDMMC; SPI; USART; USB FS Kind of architecture: Cortex M33 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 256kB FLASH; 256kB SRAM Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 2 Number of 12bit D/A converters: 1 Number of 16bit timers: 9 Number of 32bit timers: 2 Family: STM32L5 Kind of core: 32-bit |
на замовлення 75 шт: термін постачання 21-30 дні (днів) |
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STM32L552ZET6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 110MHz; LQFP144; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 110MHz Mounting: SMD Number of inputs/outputs: 115/111 Case: LQFP144 Supply voltage: 1.71...3.6V DC Interface: CAN FD; GPIO; I2C; SAI; SDMMC; SPI; USART; USB FS Kind of architecture: Cortex M33 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 256kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 2 Number of 12bit D/A converters: 1 Number of 16bit timers: 9 Number of 32bit timers: 2 Family: STM32L5 Kind of core: 32-bit |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
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STM32L562RET6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 110MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 110MHz Mounting: SMD Number of inputs/outputs: 52 Case: LQFP64 Supply voltage: 1.71...3.6V DC Interface: CAN FD; GPIO; I2C; SAI; SPI; USART; USB FS Kind of architecture: Cortex M33 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 256kB SRAM Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 2 Number of 12bit D/A converters: 1 Number of 16bit timers: 9 Number of 32bit timers: 2 Family: STM32L5 Kind of core: 32-bit |
на замовлення 138 шт: термін постачання 21-30 дні (днів) |
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STM32L562VET6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 110MHz; LQFP100; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 110MHz Mounting: SMD Number of inputs/outputs: 83/79 Case: LQFP100 Supply voltage: 1.71...3.6V DC Interface: CAN FD; GPIO; I2C; SAI; SPI; USART; USB FS Kind of architecture: Cortex M33 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 256kB SRAM Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 2 Number of 12bit D/A converters: 1 Number of 16bit timers: 9 Number of 32bit timers: 2 Family: STM32L5 Kind of core: 32-bit |
на замовлення 85 шт: термін постачання 21-30 дні (днів) |
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STM32U585RIT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 160MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 160MHz Mounting: SMD Number of inputs/outputs: 51/47 Case: LQFP64 Supply voltage: 1.71...3.6V DC Interface: CAN FD; GPIO; I2C; LPUART; SAI; SDMMC; SPI; UART; USART; USB Kind of architecture: Cortex M33 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 786kB SRAM; 2MB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of comparators: 2 Number of 12bit D/A converters: 2 Family: STM32U5 Kind of core: 32-bit |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
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| STF7N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Pulsed drain current: 24A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Gate charge: 13.4nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| STF28N65M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STF24N65M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 64A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 64A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.79 грн |
| 10+ | 123.75 грн |
| 25+ | 116.66 грн |
| BD243C |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
товару немає в наявності
В кошику
од. на суму грн.
| STM8S003F3P6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 128B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 128B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Kind of core: 8-bit
товару немає в наявності
В кошику
од. на суму грн.
| STF10N65K3 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 42nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 40A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 42nC
на замовлення 88 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 154.49 грн |
| 10+ | 79.61 грн |
| 50+ | 68.58 грн |
| STF11N60DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 16.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 16.5nC
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 144.30 грн |
| ULN2074B |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP16; 1.5A; 50V; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP16
Output current: 1.5A
Output voltage: 50V
Number of channels: 4
Mounting: THT
Operating temperature: -20...85°C
Application: for inductive load
Input voltage: 30V
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; DIP16; 1.5A; 50V; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: DIP16
Output current: 1.5A
Output voltage: 50V
Number of channels: 4
Mounting: THT
Operating temperature: -20...85°C
Application: for inductive load
Input voltage: 30V
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 331.90 грн |
| 3+ | 276.66 грн |
| 10+ | 258.54 грн |
| 25+ | 249.08 грн |
| P0102AL 5AA4 |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 100V; Ifmax: 0.25A; 0.16A; Igt: 200uA; SOT23-3; SMD
Type of thyristor: thyristor
Max. off-state voltage: 100V
Max. load current: 0.25A
Case: SOT23-3
Gate current: 0.2mA
Mounting: SMD
Kind of package: reel; tape
Load current: 0.16A
Max. forward impulse current: 7A
Category: SMD/THT thyristors
Description: Thyristor; 100V; Ifmax: 0.25A; 0.16A; Igt: 200uA; SOT23-3; SMD
Type of thyristor: thyristor
Max. off-state voltage: 100V
Max. load current: 0.25A
Case: SOT23-3
Gate current: 0.2mA
Mounting: SMD
Kind of package: reel; tape
Load current: 0.16A
Max. forward impulse current: 7A
товару немає в наявності
В кошику
од. на суму грн.
| STF12N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 36A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 36A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 16nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STL40N10F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 40A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 40A
Power dissipation: 70W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 40A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Pulsed drain current: 40A
Power dissipation: 70W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STF38N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 322.56 грн |
| STL24N60DM2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 60A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 60A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STL24N60M2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 72A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 72A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STL24N60M6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 52.5A; 109W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 52.5A
Power dissipation: 109W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 209mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 52.5A; 109W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 52.5A
Power dissipation: 109W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 209mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STF12N65M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.7nC
Pulsed drain current: 32A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 16.7nC
Pulsed drain current: 32A
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| STF7N60DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 7.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 7.5nC
Kind of package: tube
Kind of channel: enhancement
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| STF7N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 8.8nC
Kind of package: tube
Kind of channel: enhancement
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| STL7N60M2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 67W
Case: PowerFLAT 5x5
Gate-source voltage: ±25V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 67W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 67W
Case: PowerFLAT 5x5
Gate-source voltage: ±25V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STP80N600K6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 15A; 86W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Pulsed drain current: 15A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhancement
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| STF11N60M2-EP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.595Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30A
Gate charge: 12.4nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.595Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30A
Gate charge: 12.4nC
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| STF7N65M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 20A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 9nC
Kind of package: tube
Kind of channel: enhancement
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| STF57N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 42A; Idm: 168A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 42A; Idm: 168A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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| SCTH40N120G2V-7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 100A; 238W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 100A
Power dissipation: 238W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 100A; 238W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 100A
Power dissipation: 238W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| SCTH40N120G2V7AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 92A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 92A
Power dissipation: 250W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 92A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 92A
Power dissipation: 250W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| SCTW40N120G2V |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 108A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 108A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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| SCTWA40N120G2V |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 108A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 108A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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| SCTWA40N120G2V-4 |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 107A; 277W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 107A
Power dissipation: 277W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 107A; 277W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 107A
Power dissipation: 277W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| STM8L151F3P3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 1.65÷3.6VDC; Cmp: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI; USART
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 256B EEPROM; 1kB RAM; 8kB FLASH
Number of 12bit A/D converters: 10
Number of comparators: 2
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Family: STM8L
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 1.65÷3.6VDC; Cmp: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI; USART
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 256B EEPROM; 1kB RAM; 8kB FLASH
Number of 12bit A/D converters: 10
Number of comparators: 2
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Family: STM8L
Kind of core: 8-bit
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| STGB18N40LZT4 |
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Виробник: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 30A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 30A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 30A; 150W; D2PAK; automotive industry; ESD
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 30A
Power dissipation: 150W
Case: D2PAK
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Features of semiconductor devices: internally clamped
Application: automotive industry
Version: ESD
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| STP10N105K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 6A; Idm: 24A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 6A; Idm: 24A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21.5nC
Pulsed drain current: 24A
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| STL115N10F7AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 107A; Idm: 428A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 107A
Pulsed drain current: 428A
Power dissipation: 136W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 107A; Idm: 428A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 107A
Pulsed drain current: 428A
Power dissipation: 136W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 72.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| STGW28IH125DF |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.25kV; 30A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.25kV
Collector current: 30A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.25kV; 30A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.25kV
Collector current: 30A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 268.24 грн |
| 3+ | 223.85 грн |
| 10+ | 197.84 грн |
| 30+ | 178.14 грн |
| STF10NM60ND |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 70W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 70W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 32A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 70W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 70W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 32A
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| STF6N65K3 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.4A; Idm: 21.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Pulsed drain current: 21.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5.4A; Idm: 21.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Pulsed drain current: 21.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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| STF6N65M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 9.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 1.35Ω
Mounting: THT
Gate charge: 9.8nC
Kind of package: tube
Kind of channel: enhancement
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| STF16N65M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19.5nC
Pulsed drain current: 44A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19.5nC
Pulsed drain current: 44A
на замовлення 47 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.00 грн |
| 10+ | 96.95 грн |
| SCTW70N120G2V |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 91A; Idm: 274A; 547W
Gate-source voltage: -10...22V
Gate charge: 150nC
On-state resistance: 30mΩ
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 91A
Technology: SiC
Case: HIP247™
Pulsed drain current: 274A
Power dissipation: 547W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 91A; Idm: 274A; 547W
Gate-source voltage: -10...22V
Gate charge: 150nC
On-state resistance: 30mΩ
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 91A
Technology: SiC
Case: HIP247™
Pulsed drain current: 274A
Power dissipation: 547W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
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| STM32F103ZGT6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP144; 2÷3.6VDC; -40÷85°C
Family: STM32F1
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Number of 12bit A/D converters: 3
Number of inputs/outputs: 112
Memory: 96kB SRAM; 1MB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; I2C; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: DMA; LCD controller; PoR; PWM
Case: LQFP144
Mounting: SMD
Type of integrated circuit: STM32 ARM microcontroller
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP144; 2÷3.6VDC; -40÷85°C
Family: STM32F1
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Number of 12bit A/D converters: 3
Number of inputs/outputs: 112
Memory: 96kB SRAM; 1MB FLASH
Kind of core: 32-bit
Clock frequency: 72MHz
Interface: CAN; I2C; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: DMA; LCD controller; PoR; PWM
Case: LQFP144
Mounting: SMD
Type of integrated circuit: STM32 ARM microcontroller
на замовлення 490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 923.55 грн |
| 5+ | 807.14 грн |
| 25+ | 788.22 грн |
| 50+ | 769.30 грн |
| 100+ | 759.84 грн |
| STD4N90K5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3A; Idm: 12A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3A
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.3nC
Pulsed drain current: 12A
Power dissipation: 60W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3A; Idm: 12A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3A
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.3nC
Pulsed drain current: 12A
Power dissipation: 60W
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| STF4N90K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 16A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 5.3nC
Pulsed drain current: 16A
Power dissipation: 20W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 16A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 5.3nC
Pulsed drain current: 16A
Power dissipation: 20W
на замовлення 97 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.10 грн |
| 10+ | 97.74 грн |
| 25+ | 79.61 грн |
| 50+ | 73.30 грн |
| STF10N60DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 32A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 32A
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| STF10N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13.5nC
Pulsed drain current: 30A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.5A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 13.5nC
Pulsed drain current: 30A
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| STF6N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.5A; Idm: 18A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.5A; Idm: 18A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
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| STF6N90K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 91 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 173.17 грн |
| 10+ | 85.92 грн |
| 50+ | 78.82 грн |
| STL45N65M5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.5A; Idm: 90A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.5A
Pulsed drain current: 90A
Power dissipation: 160W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.5A; Idm: 90A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.5A
Pulsed drain current: 90A
Power dissipation: 160W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STF11N65M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 28A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 12.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 28A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.68Ω
Mounting: THT
Gate charge: 12.5nC
Kind of package: tube
Kind of channel: enhancement
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| STF11N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 36A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 36A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 94 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.50 грн |
| 10+ | 81.19 грн |
| 50+ | 78.82 грн |
| STF11NM60ND |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 40A
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 223.25 грн |
| 10+ | 164.74 грн |
| 25+ | 152.91 грн |
| STL33N60DM2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 150W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 150W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STL33N60DM6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 80A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 80A
Power dissipation: 150W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 80A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 80A
Power dissipation: 150W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STL33N60M2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 150W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 45.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 150W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 45.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STL33N60M6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 78A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 78A
Power dissipation: 150W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 33.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 78A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 78A
Power dissipation: 150W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 33.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STP33N60M6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 78A; 190W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 78A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 78A; 190W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 78A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 33.4nC
Kind of package: tube
Kind of channel: enhancement
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| L6219 |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; stepper motor controller; DIP24; 750mA; Ch: 4
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: stepper motor controller
Case: DIP24
Output current: 0.75A
Number of channels: 4
Mounting: THT
Operating temperature: -25...85°C
Frequency: 0.1MHz
Kind of package: tube
Supply voltage: 10...46V
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; stepper motor controller; DIP24; 750mA; Ch: 4
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: stepper motor controller
Case: DIP24
Output current: 0.75A
Number of channels: 4
Mounting: THT
Operating temperature: -25...85°C
Frequency: 0.1MHz
Kind of package: tube
Supply voltage: 10...46V
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| STM32L552RCT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 110MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 110MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; SAI; SDMMC; SPI; USART; USB FS
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 256kB FLASH; 256kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 9
Number of 32bit timers: 2
Family: STM32L5
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 110MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 110MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; SAI; SDMMC; SPI; USART; USB FS
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 256kB FLASH; 256kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 9
Number of 32bit timers: 2
Family: STM32L5
Kind of core: 32-bit
на замовлення 75 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 522.89 грн |
| 10+ | 452.44 грн |
| STM32L552ZET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 110MHz; LQFP144; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 110MHz
Mounting: SMD
Number of inputs/outputs: 115/111
Case: LQFP144
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; SAI; SDMMC; SPI; USART; USB FS
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 9
Number of 32bit timers: 2
Family: STM32L5
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 110MHz; LQFP144; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 110MHz
Mounting: SMD
Number of inputs/outputs: 115/111
Case: LQFP144
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; SAI; SDMMC; SPI; USART; USB FS
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 9
Number of 32bit timers: 2
Family: STM32L5
Kind of core: 32-bit
на замовлення 55 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 733.41 грн |
| 3+ | 655.80 грн |
| 10+ | 604.56 грн |
| 25+ | 520.22 грн |
| STM32L562RET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 110MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 110MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; SAI; SPI; USART; USB FS
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 256kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 9
Number of 32bit timers: 2
Family: STM32L5
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 110MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 110MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; SAI; SPI; USART; USB FS
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 256kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 9
Number of 32bit timers: 2
Family: STM32L5
Kind of core: 32-bit
на замовлення 138 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 610.32 грн |
| STM32L562VET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 110MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 110MHz
Mounting: SMD
Number of inputs/outputs: 83/79
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; SAI; SPI; USART; USB FS
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 256kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 9
Number of 32bit timers: 2
Family: STM32L5
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 110MHz; LQFP100; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 110MHz
Mounting: SMD
Number of inputs/outputs: 83/79
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; SAI; SPI; USART; USB FS
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 256kB SRAM
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 2
Number of 12bit D/A converters: 1
Number of 16bit timers: 9
Number of 32bit timers: 2
Family: STM32L5
Kind of core: 32-bit
на замовлення 85 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 702.00 грн |
| 5+ | 598.26 грн |
| 10+ | 582.49 грн |
| STM32U585RIT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 160MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 160MHz
Mounting: SMD
Number of inputs/outputs: 51/47
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; LPUART; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 786kB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 2
Family: STM32U5
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 160MHz; LQFP64; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 160MHz
Mounting: SMD
Number of inputs/outputs: 51/47
Case: LQFP64
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; I2C; LPUART; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 786kB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 2
Family: STM32U5
Kind of core: 32-bit
на замовлення 29 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 744.44 грн |
| 3+ | 671.56 грн |
| 10+ | 644.76 грн |
| 25+ | 617.18 грн |
| STF7N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 13.4nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 13.4nC
Kind of package: tube
Kind of channel: enhancement
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