Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (161826) > Сторінка 2682 з 2698
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| STP150N10F7AG | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Pulsed drain current: 440A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 127nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STP14NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13.5A; 160W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.5A Case: TO220 On-state resistance: 0.5Ω Mounting: THT Power: 160W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NUCLEO-L4R5ZI | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; Comp: STM32L4R5ZIT6; Architecture: Cortex M4 Type of development kit: STM32 Components: STM32L4R5ZIT6 Interface: USB Kind of connector: Morpho plug; pin strips; pin strips; USB B micro Kind of architecture: Cortex M4 Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors Kit contents: base board |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STM32F769IGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 216MHz Mounting: SMD Number of inputs/outputs: 140 Case: LQFP176 Supply voltage: 1.7...3.6V DC Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG Kind of architecture: Cortex M7 Integrated circuit features: TRNG Memory: 512kB SRAM; 1MB FLASH Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Number of 16bit timers: 12 Number of 32bit timers: 2 Family: STM32F7 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STM32F412CEU6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 36 Case: UFQFPN48 Supply voltage: 1.7...3.6V DC Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 256kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 10 Number of 16bit timers: 14 Family: STM32F4 Kind of package: in-tray Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32F412CEU6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 36 Case: UFQFPN48 Supply voltage: 1.7...3.6V DC Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 256kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 10 Number of 16bit timers: 14 Family: STM32F4 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CR95HF-VMD5T | STMicroelectronics |
Category: Interfaces others - integrated circuitsDescription: IC: NFC/RFID tag; 2.7÷5.5VDC; SPI,UART; SMD; VFQFPN32; reel,tape Type of integrated circuit: NFC/RFID tag Supply voltage: 2.7...5.5V DC Interface: SPI; UART Mounting: SMD Case: VFQFPN32 Operating temperature: -25...85°C Kind of package: reel; tape Frequency: 13.56MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32L412KBU6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 80MHz Mounting: SMD Number of inputs/outputs: 26 Case: QFN32 Supply voltage: 1.71...3.6V DC Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 40kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 1 Family: STM32L4 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32L412KBU6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 80MHz Mounting: SMD Number of inputs/outputs: 26 Case: QFN32 Supply voltage: 1.71...3.6V DC Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 40kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 1 Family: STM32L4 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BZW50-27B | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 30V; 103A; bidirectional; R6; 5kW; Ammo Pack Type of diode: TVS Max. off-state voltage: 27V Breakdown voltage: 30V Max. forward impulse current: 103A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 5kW Kind of package: Ammo Pack |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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SM6T30A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 4007 шт: термін постачання 21-30 дні (днів) |
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P6KE30A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack |
на замовлення 256 шт: термін постачання 21-30 дні (днів) |
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SM6T30CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 5747 шт: термін постачання 21-30 дні (днів) |
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SM15T30A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 36A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1213 шт: термін постачання 21-30 дні (днів) |
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BZW50-27 | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 5kW; 30V; 103A; unidirectional; R6; reel,tape Type of diode: TVS Max. off-state voltage: 27V Breakdown voltage: 30V Max. forward impulse current: 103A Semiconductor structure: unidirectional Case: R6 Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 5kW Kind of package: reel; tape |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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SM15T30CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 36A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2193 шт: термін постачання 21-30 дні (днів) |
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SM6T30AY | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
на замовлення 2278 шт: термін постачання 21-30 дні (днів) |
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SM6T30CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
на замовлення 2160 шт: термін постачання 21-30 дні (днів) |
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BD678 | STMicroelectronics |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 40W Case: SOT32 Current gain: 750 Mounting: THT Kind of package: tube |
на замовлення 920 шт: термін постачання 21-30 дні (днів) |
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STF13N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 35W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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STP13N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STB13N80K5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STFU13N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| ST13007DFP | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 8A; 36W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 8A Power dissipation: 36W Case: TO220FP Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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L9616-TR | STMicroelectronics |
Category: CAN interfaces - integrated circuitsDescription: IC: interface; transceiver; 4.5÷5.5VDC; SO8; -40÷150°C; reel,tape Operating temperature: -40...150°C Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: transceiver Supply voltage: 4.5...5.5V DC Case: SO8 Version: ESD Type of integrated circuit: interface Interface: CAN bus |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STPS340UF | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB flat; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB flat Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.57V Max. load current: 6A Max. forward impulse current: 75A Kind of package: reel; tape Leakage current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STPS340UY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.63V Max. load current: 6A Max. forward impulse current: 75A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| P6KE400ARL | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS Type of diode: TVS |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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STG719STR | STMicroelectronics |
Category: Interfaces others - integrated circuitsDescription: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.8÷5.5VDC Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer; SPDT Case: SOT23-6 Supply voltage: 1.8...5.5V DC Mounting: SMD Interface: GPIO Number of channels: 1 |
на замовлення 2637 шт: термін постачання 21-30 дні (днів) |
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| STM32C011F4U3TR | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller Type of integrated circuit: STM32 ARM microcontroller |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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SM15T100CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 100V; 11A; bidirectional; SMC; reel,tape Case: SMC Semiconductor structure: bidirectional Mounting: SMD Type of diode: TVS Leakage current: 1µA Max. forward impulse current: 11A Max. off-state voltage: 85.5V Breakdown voltage: 100V Peak pulse power dissipation: 1.5kW Kind of package: reel; tape |
на замовлення 1790 шт: термін постачання 21-30 дні (днів) |
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SM15T100A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; SMC; reel,tape Case: SMC Semiconductor structure: unidirectional Mounting: SMD Type of diode: TVS Leakage current: 1µA Max. forward impulse current: 11A Max. off-state voltage: 85.5V Breakdown voltage: 100V Peak pulse power dissipation: 1.5kW Kind of package: reel; tape |
на замовлення 1340 шт: термін постачання 21-30 дні (днів) |
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VND5T100AJTR-E | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: power switch; high-side; 22A; PowerSSO12; 8÷36V; reel,tape Case: PowerSSO12 Mounting: SMD Kind of integrated circuit: high-side Type of integrated circuit: power switch Operating temperature: -40...150°C On-state resistance: 0.2Ω Number of channels: 2 Output current: 22A Supply voltage: 8...36V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| VND5T100LAJTR-E | STMicroelectronics |
Category: Integrated circuits - UnclassifiedDescription: VND5T100LAJTR-E |
на замовлення 92500 шт: термін постачання 21-30 дні (днів) |
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BD678A | STMicroelectronics |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 40W Case: SOT32 Current gain: 750 Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STM32L452VET6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 80MHz; LQFP100; 1.71÷3.6VDC; Cmp: 2 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 80MHz Mounting: SMD Number of inputs/outputs: 83 Case: LQFP100 Supply voltage: 1.71...3.6V DC Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 160kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of 12bit D/A converters: 1 Family: STM32L4 Kind of core: 32-bit Number of comparators: 2 |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
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DA108S1RL | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 12A; 0.73W; bidirectional; SO8; Ch: 4; ESD Semiconductor structure: bidirectional Version: ESD Mounting: SMD Type of diode: TVS array Leakage current: 2µA Peak pulse power dissipation: 0.73W Number of channels: 4 Max. forward impulse current: 12A Max. off-state voltage: 18V Case: SO8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| VIPER53SPTR-E | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: driver; flyback; PWM controller; PowerSO10; 2A; 620V; Ch: 1 Type of integrated circuit: driver Topology: flyback Kind of integrated circuit: PWM controller Case: PowerSO10 Output current: 2A Output voltage: 620V Number of channels: 1 Mounting: SMD Operating temperature: -40...150°C Application: SMPS Operating voltage: 7.5...19V DC Frequency: 93...300kHz Kind of package: reel; tape Supply voltage: 10.2...19V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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VIPER53EDIP-E | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: driver; flyback; PWM controller; DIP8; 2A; 620V; Ch: 1; 7.5÷19VDC Type of integrated circuit: driver Topology: flyback Kind of integrated circuit: PWM controller Case: DIP8 Output current: 2A Output voltage: 620V Number of channels: 1 Mounting: THT Operating temperature: -40...150°C Application: SMPS Operating voltage: 7.5...19V DC Frequency: 93...300kHz Kind of package: tube Supply voltage: 10.2...19V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| VIPER53ESP-E | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: driver; flyback; PWM controller; PowerSO10; 2A; 620V; Ch: 1 Type of integrated circuit: driver Topology: flyback Kind of integrated circuit: PWM controller Case: PowerSO10 Output current: 2A Output voltage: 620V Number of channels: 1 Mounting: SMD Operating temperature: -40...150°C Application: SMPS Operating voltage: 7.5...19V DC Frequency: 93...300kHz Kind of package: tube Supply voltage: 10.2...19V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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T1210-800G-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 12A; D2PAK; Igt: 10mA Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: D2PAK Gate current: 10mA Mounting: SMD Kind of package: reel; tape |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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| ST1510FX | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 1.5kV; 12A; 62W; TO3PF Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 1.5kV Collector current: 12A Power dissipation: 62W Case: TO3PF Mounting: THT Kind of package: tube |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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LDK320AM36R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.2A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.35V Output voltage: 3.6V Output current: 0.2A Case: SOT23-5 Mounting: SMD Manufacturer series: LDK320 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±0.5% Number of channels: 1 Input voltage: 2.5...18V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD32CT4 | STMicroelectronics |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Mounting: SMD Kind of package: reel; tape |
на замовлення 2155 шт: термін постачання 21-30 дні (днів) |
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| MJD32CT4-A | STMicroelectronics |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| ACS108-8TN-TR | STMicroelectronics |
Category: TriacsDescription: ACS108-8TN-TR |
на замовлення 65000 шт: термін постачання 21-30 дні (днів) |
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| STW65N023M9-4 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STWA65N023M9 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 58A; Idm: 440A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 58A Pulsed drain current: 440A Power dissipation: 463W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ M9 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LD56100DPU30R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,fixed; 3V; 1A; DFN8; SMD; LD56100; 1÷2% Kind of voltage regulator: fixed; LDO Kind of package: reel; tape Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...85°C Tolerance: 1...2% Voltage drop: 0.165V Output current: 1A Input voltage: 1.8...5.5V Number of channels: 2 Output voltage: 3V Manufacturer series: LD56100 Case: DFN8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LD56100DPU33R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,fixed; 3.3V; 1A; DFN8; SMD; LD56100; 1÷2% Kind of voltage regulator: fixed; LDO Kind of package: reel; tape Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...85°C Tolerance: 1...2% Voltage drop: 0.155V Output current: 1A Input voltage: 1.8...5.5V Number of channels: 2 Output voltage: 3.3V Manufacturer series: LD56100 Case: DFN8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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VNN3NV04PTR-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 3.5A; Ch: 1; SMD; SOT223 Type of integrated circuit: power switch Mounting: SMD On-state resistance: 0.12Ω Number of channels: 1 Output current: 3.5A Case: SOT223 Output voltage: 36V Kind of integrated circuit: low-side |
на замовлення 869 шт: термін постачання 21-30 дні (днів) |
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| VND3NV04TR-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 3.5A; Ch: 1; SMD; DPAK; tube Type of integrated circuit: power switch Kind of package: tube Mounting: SMD On-state resistance: 0.12Ω Number of channels: 1 Output current: 3.5A Case: DPAK Output voltage: 40V Kind of integrated circuit: low-side |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| VNS3NV04PTR-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch Type of integrated circuit: power switch |
на замовлення 7500 шт: термін постачання 21-30 дні (днів) |
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| STD40NF10 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 50A; 125W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Power dissipation: 125W Case: DPAK; TO252 On-state resistance: 28mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 62nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STD40NF10 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 100V; 50A; 125W; DPAK Type of transistor: N-MOSFET Drain-source voltage: 100V Drain current: 50A Power dissipation: 125W Case: DPAK Gate-source voltage: 20V On-state resistance: 28mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 62nC |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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SMCJ33CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 38.6V Max. forward impulse current: 29A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape |
на замовлення 2461 шт: термін постачання 21-30 дні (днів) |
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SMCJ30CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 35.1V; 32A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 35.1V Max. forward impulse current: 32A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape |
на замовлення 1066 шт: термін постачання 21-30 дні (днів) |
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SMCJ26A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 30.4V; 37A; unidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 26V Breakdown voltage: 30.4V Max. forward impulse current: 37A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
на замовлення 475 шт: термін постачання 21-30 дні (днів) |
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SMCJ40CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 46.7V; 24A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 46.7V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
на замовлення 1036 шт: термін постачання 21-30 дні (днів) |
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SMCJ28A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 32.7V; 34A; unidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 32.7V Max. forward impulse current: 34A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
на замовлення 790 шт: термін постачання 21-30 дні (днів) |
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| STP150N10F7AG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 440A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 440A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STP14NK60Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.5A; 160W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.5A
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
Power: 160W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.5A; 160W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.5A
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
Power: 160W
товару немає в наявності
В кошику
од. на суму грн.
| NUCLEO-L4R5ZI |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; Comp: STM32L4R5ZIT6; Architecture: Cortex M4
Type of development kit: STM32
Components: STM32L4R5ZIT6
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B micro
Kind of architecture: Cortex M4
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kit contents: base board
Category: STM development kits
Description: Dev.kit: STM32; Comp: STM32L4R5ZIT6; Architecture: Cortex M4
Type of development kit: STM32
Components: STM32L4R5ZIT6
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B micro
Kind of architecture: Cortex M4
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kit contents: base board
товару немає в наявності
В кошику
од. на суму грн.
| STM32F769IGT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 140
Case: LQFP176
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 2
Family: STM32F7
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 140
Case: LQFP176
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 2
Family: STM32F7
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| STM32F412CEU6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 36
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 36
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
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В кошику
од. на суму грн.
| STM32F412CEU6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 36
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 14
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 36
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 14
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
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В кошику
од. на суму грн.
| CR95HF-VMD5T |
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Виробник: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: NFC/RFID tag; 2.7÷5.5VDC; SPI,UART; SMD; VFQFPN32; reel,tape
Type of integrated circuit: NFC/RFID tag
Supply voltage: 2.7...5.5V DC
Interface: SPI; UART
Mounting: SMD
Case: VFQFPN32
Operating temperature: -25...85°C
Kind of package: reel; tape
Frequency: 13.56MHz
Category: Interfaces others - integrated circuits
Description: IC: NFC/RFID tag; 2.7÷5.5VDC; SPI,UART; SMD; VFQFPN32; reel,tape
Type of integrated circuit: NFC/RFID tag
Supply voltage: 2.7...5.5V DC
Interface: SPI; UART
Mounting: SMD
Case: VFQFPN32
Operating temperature: -25...85°C
Kind of package: reel; tape
Frequency: 13.56MHz
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В кошику
од. на суму грн.
| STM32L412KBU6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: QFN32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 1
Family: STM32L4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: QFN32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 1
Family: STM32L4
Kind of core: 32-bit
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В кошику
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| STM32L412KBU6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: QFN32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 1
Family: STM32L4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: QFN32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 1
Family: STM32L4
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| BZW50-27B |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 30V; 103A; bidirectional; R6; 5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 27V
Breakdown voltage: 30V
Max. forward impulse current: 103A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 5kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 30V; 103A; bidirectional; R6; 5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 27V
Breakdown voltage: 30V
Max. forward impulse current: 103A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 5kW
Kind of package: Ammo Pack
на замовлення 61 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 136.08 грн |
| SM6T30A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 4007 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.23 грн |
| 34+ | 12.39 грн |
| 35+ | 11.81 грн |
| 37+ | 11.40 грн |
| 50+ | 10.82 грн |
| 100+ | 10.41 грн |
| 500+ | 9.42 грн |
| 1000+ | 9.00 грн |
| 2500+ | 8.42 грн |
| P6KE30A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
на замовлення 256 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.24 грн |
| 18+ | 22.96 грн |
| 21+ | 20.56 грн |
| 50+ | 15.86 грн |
| 100+ | 14.29 грн |
| 250+ | 12.47 грн |
| SM6T30CA | ![]() |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 5747 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.35 грн |
| 23+ | 18.50 грн |
| 28+ | 15.28 грн |
| 50+ | 13.21 грн |
| 100+ | 11.56 грн |
| 250+ | 9.75 грн |
| 500+ | 8.67 грн |
| 1000+ | 7.85 грн |
| 2500+ | 6.94 грн |
| SM15T30A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1213 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.81 грн |
| 10+ | 41.38 грн |
| 50+ | 34.27 грн |
| 100+ | 31.63 грн |
| 250+ | 28.33 грн |
| 500+ | 26.10 грн |
| 1000+ | 24.12 грн |
| BZW50-27 |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 30V; 103A; unidirectional; R6; reel,tape
Type of diode: TVS
Max. off-state voltage: 27V
Breakdown voltage: 30V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 5kW
Kind of package: reel; tape
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 30V; 103A; unidirectional; R6; reel,tape
Type of diode: TVS
Max. off-state voltage: 27V
Breakdown voltage: 30V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 5kW
Kind of package: reel; tape
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 161.87 грн |
| 10+ | 123.88 грн |
| 25+ | 115.62 грн |
| SM15T30CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2193 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.03 грн |
| 11+ | 41.05 грн |
| 50+ | 33.61 грн |
| 100+ | 30.81 грн |
| 250+ | 27.34 грн |
| 500+ | 25.02 грн |
| 1000+ | 22.96 грн |
| SM6T30AY |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 2278 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.92 грн |
| 13+ | 33.86 грн |
| 25+ | 31.30 грн |
| 100+ | 25.27 грн |
| 250+ | 21.23 грн |
| 500+ | 18.66 грн |
| 1000+ | 15.20 грн |
| SM6T30CAY |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 2160 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.69 грн |
| 13+ | 33.37 грн |
| 14+ | 29.98 грн |
| 100+ | 20.15 грн |
| 250+ | 17.18 грн |
| 500+ | 15.28 грн |
| 1000+ | 13.63 грн |
| BD678 |
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Виробник: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
на замовлення 920 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 63.15 грн |
| 13+ | 34.36 грн |
| 50+ | 26.92 грн |
| 100+ | 24.28 грн |
| 200+ | 21.89 грн |
| 500+ | 19.16 грн |
| STF13N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 278.39 грн |
| 10+ | 170.13 грн |
| STP13N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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| STB13N80K5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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од. на суму грн.
| STFU13N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| ST13007DFP |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 36W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 36W
Case: TO220FP
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 36W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 8A
Power dissipation: 36W
Case: TO220FP
Mounting: THT
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од. на суму грн.
| L9616-TR |
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Виробник: STMicroelectronics
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SO8; -40÷150°C; reel,tape
Operating temperature: -40...150°C
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: SO8
Version: ESD
Type of integrated circuit: interface
Interface: CAN bus
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SO8; -40÷150°C; reel,tape
Operating temperature: -40...150°C
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: SO8
Version: ESD
Type of integrated circuit: interface
Interface: CAN bus
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од. на суму грн.
| STPS340UF |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. load current: 6A
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 10mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Max. load current: 6A
Max. forward impulse current: 75A
Kind of package: reel; tape
Leakage current: 10mA
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| STPS340UY |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Max. load current: 6A
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Max. load current: 6A
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
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од. на суму грн.
| P6KE400ARL |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6000+ | 10.67 грн |
| STG719STR |
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Виробник: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.8÷5.5VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Case: SOT23-6
Supply voltage: 1.8...5.5V DC
Mounting: SMD
Interface: GPIO
Number of channels: 1
Category: Interfaces others - integrated circuits
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 1.8÷5.5VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Case: SOT23-6
Supply voltage: 1.8...5.5V DC
Mounting: SMD
Interface: GPIO
Number of channels: 1
на замовлення 2637 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.92 грн |
| 12+ | 36.83 грн |
| 25+ | 34.19 грн |
| 100+ | 30.31 грн |
| 250+ | 27.83 грн |
| 500+ | 25.93 грн |
| 1000+ | 25.44 грн |
| STM32C011F4U3TR |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller
Type of integrated circuit: STM32 ARM microcontroller
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller
Type of integrated circuit: STM32 ARM microcontroller
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 36.64 грн |
| SM15T100CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; bidirectional; SMC; reel,tape
Case: SMC
Semiconductor structure: bidirectional
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Max. forward impulse current: 11A
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; bidirectional; SMC; reel,tape
Case: SMC
Semiconductor structure: bidirectional
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Max. forward impulse current: 11A
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
на замовлення 1790 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.81 грн |
| 10+ | 44.27 грн |
| 11+ | 40.47 грн |
| 50+ | 33.28 грн |
| 100+ | 30.72 грн |
| 500+ | 26.10 грн |
| 1000+ | 24.53 грн |
| SM15T100A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; SMC; reel,tape
Case: SMC
Semiconductor structure: unidirectional
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Max. forward impulse current: 11A
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; SMC; reel,tape
Case: SMC
Semiconductor structure: unidirectional
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Max. forward impulse current: 11A
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
на замовлення 1340 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.38 грн |
| 10+ | 54.01 грн |
| 50+ | 44.60 грн |
| 100+ | 40.55 грн |
| 500+ | 31.30 грн |
| 1000+ | 27.42 грн |
| VND5T100AJTR-E |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 22A; PowerSSO12; 8÷36V; reel,tape
Case: PowerSSO12
Mounting: SMD
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Operating temperature: -40...150°C
On-state resistance: 0.2Ω
Number of channels: 2
Output current: 22A
Supply voltage: 8...36V
Kind of package: reel; tape
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 22A; PowerSSO12; 8÷36V; reel,tape
Case: PowerSSO12
Mounting: SMD
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Operating temperature: -40...150°C
On-state resistance: 0.2Ω
Number of channels: 2
Output current: 22A
Supply voltage: 8...36V
Kind of package: reel; tape
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| VND5T100LAJTR-E |
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Виробник: STMicroelectronics
Category: Integrated circuits - Unclassified
Description: VND5T100LAJTR-E
Category: Integrated circuits - Unclassified
Description: VND5T100LAJTR-E
на замовлення 92500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 150.31 грн |
| BD678A |
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Виробник: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
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| STM32L452VET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP100; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 160kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of 12bit D/A converters: 1
Family: STM32L4
Kind of core: 32-bit
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP100; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 160kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of 12bit D/A converters: 1
Family: STM32L4
Kind of core: 32-bit
Number of comparators: 2
на замовлення 81 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 483.84 грн |
| 3+ | 405.51 грн |
| 10+ | 346.87 грн |
| DA108S1RL |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 12A; 0.73W; bidirectional; SO8; Ch: 4; ESD
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Type of diode: TVS array
Leakage current: 2µA
Peak pulse power dissipation: 0.73W
Number of channels: 4
Max. forward impulse current: 12A
Max. off-state voltage: 18V
Case: SO8
Category: Protection diodes - arrays
Description: Diode: TVS array; 12A; 0.73W; bidirectional; SO8; Ch: 4; ESD
Semiconductor structure: bidirectional
Version: ESD
Mounting: SMD
Type of diode: TVS array
Leakage current: 2µA
Peak pulse power dissipation: 0.73W
Number of channels: 4
Max. forward impulse current: 12A
Max. off-state voltage: 18V
Case: SO8
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| VIPER53SPTR-E |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; PowerSO10; 2A; 620V; Ch: 1
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: PowerSO10
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: reel; tape
Supply voltage: 10.2...19V
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; PowerSO10; 2A; 620V; Ch: 1
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: PowerSO10
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: reel; tape
Supply voltage: 10.2...19V
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| VIPER53EDIP-E |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; DIP8; 2A; 620V; Ch: 1; 7.5÷19VDC
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: DIP8
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: THT
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: tube
Supply voltage: 10.2...19V
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; DIP8; 2A; 620V; Ch: 1; 7.5÷19VDC
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: DIP8
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: THT
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: tube
Supply voltage: 10.2...19V
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| VIPER53ESP-E |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; PowerSO10; 2A; 620V; Ch: 1
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: PowerSO10
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: tube
Supply voltage: 10.2...19V
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback; PWM controller; PowerSO10; 2A; 620V; Ch: 1
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: PWM controller
Case: PowerSO10
Output current: 2A
Output voltage: 620V
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Operating voltage: 7.5...19V DC
Frequency: 93...300kHz
Kind of package: tube
Supply voltage: 10.2...19V
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| T1210-800G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
на замовлення 94 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 130.74 грн |
| 10+ | 77.30 грн |
| ST1510FX |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1.5kV; 12A; 62W; TO3PF
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1.5kV
Collector current: 12A
Power dissipation: 62W
Case: TO3PF
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 1.5kV; 12A; 62W; TO3PF
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 1.5kV
Collector current: 12A
Power dissipation: 62W
Case: TO3PF
Mounting: THT
Kind of package: tube
на замовлення 60 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 221.46 грн |
| 10+ | 170.96 грн |
| 30+ | 156.92 грн |
| LDK320AM36R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.6V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LDK320
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.5%
Number of channels: 1
Input voltage: 2.5...18V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.6V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LDK320
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.5%
Number of channels: 1
Input voltage: 2.5...18V
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| MJD32CT4 |
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Виробник: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
на замовлення 2155 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 63.15 грн |
| 11+ | 40.06 грн |
| 100+ | 24.53 грн |
| 250+ | 20.48 грн |
| 500+ | 18.09 грн |
| 1000+ | 16.10 грн |
| MJD32CT4-A |
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Виробник: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| ACS108-8TN-TR |
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на замовлення 65000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.39 грн |
| STW65N023M9-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
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| STWA65N023M9 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 58A; Idm: 440A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58A
Pulsed drain current: 440A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M9
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 58A; Idm: 440A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58A
Pulsed drain current: 440A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ M9
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| LD56100DPU30R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3V; 1A; DFN8; SMD; LD56100; 1÷2%
Kind of voltage regulator: fixed; LDO
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Tolerance: 1...2%
Voltage drop: 0.165V
Output current: 1A
Input voltage: 1.8...5.5V
Number of channels: 2
Output voltage: 3V
Manufacturer series: LD56100
Case: DFN8
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3V; 1A; DFN8; SMD; LD56100; 1÷2%
Kind of voltage regulator: fixed; LDO
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Tolerance: 1...2%
Voltage drop: 0.165V
Output current: 1A
Input voltage: 1.8...5.5V
Number of channels: 2
Output voltage: 3V
Manufacturer series: LD56100
Case: DFN8
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| LD56100DPU33R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3.3V; 1A; DFN8; SMD; LD56100; 1÷2%
Kind of voltage regulator: fixed; LDO
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Tolerance: 1...2%
Voltage drop: 0.155V
Output current: 1A
Input voltage: 1.8...5.5V
Number of channels: 2
Output voltage: 3.3V
Manufacturer series: LD56100
Case: DFN8
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3.3V; 1A; DFN8; SMD; LD56100; 1÷2%
Kind of voltage regulator: fixed; LDO
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Tolerance: 1...2%
Voltage drop: 0.155V
Output current: 1A
Input voltage: 1.8...5.5V
Number of channels: 2
Output voltage: 3.3V
Manufacturer series: LD56100
Case: DFN8
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| VNN3NV04PTR-E |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; SMD; SOT223
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 0.12Ω
Number of channels: 1
Output current: 3.5A
Case: SOT223
Output voltage: 36V
Kind of integrated circuit: low-side
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; SMD; SOT223
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 0.12Ω
Number of channels: 1
Output current: 3.5A
Case: SOT223
Output voltage: 36V
Kind of integrated circuit: low-side
на замовлення 869 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 126.30 грн |
| 10+ | 76.81 грн |
| 25+ | 68.55 грн |
| 50+ | 61.94 грн |
| VND3NV04TR-E |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; SMD; DPAK; tube
Type of integrated circuit: power switch
Kind of package: tube
Mounting: SMD
On-state resistance: 0.12Ω
Number of channels: 1
Output current: 3.5A
Case: DPAK
Output voltage: 40V
Kind of integrated circuit: low-side
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; SMD; DPAK; tube
Type of integrated circuit: power switch
Kind of package: tube
Mounting: SMD
On-state resistance: 0.12Ω
Number of channels: 1
Output current: 3.5A
Case: DPAK
Output voltage: 40V
Kind of integrated circuit: low-side
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| VNS3NV04PTR-E |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 53.36 грн |
| STD40NF10 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 125W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 125W
Case: DPAK; TO252
On-state resistance: 28mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 125W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 125W
Case: DPAK; TO252
On-state resistance: 28mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
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| STD40NF10 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 50A; 125W; DPAK
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 50A; 125W; DPAK
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 125W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 28mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 38.33 грн |
| SMCJ33CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
на замовлення 2461 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 49.81 грн |
| 12+ | 35.51 грн |
| 50+ | 27.01 грн |
| 100+ | 24.12 грн |
| 250+ | 21.14 грн |
| 500+ | 19.33 грн |
| 1000+ | 17.92 грн |
| SMCJ30CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 35.1V; 32A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 35.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 35.1V; 32A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 35.1V
Max. forward impulse current: 32A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
на замовлення 1066 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.68 грн |
| 19+ | 21.97 грн |
| 20+ | 20.65 грн |
| 50+ | 18.00 грн |
| 100+ | 17.10 грн |
| 500+ | 15.77 грн |
| SMCJ26A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30.4V; 37A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30.4V; 37A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
на замовлення 475 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.80 грн |
| 13+ | 33.78 грн |
| 20+ | 31.05 грн |
| 100+ | 24.36 грн |
| 200+ | 21.97 грн |
| SMCJ40CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 46.7V; 24A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 46.7V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 46.7V; 24A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 46.7V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
на замовлення 1036 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.36 грн |
| 14+ | 30.81 грн |
| 20+ | 28.91 грн |
| 40+ | 27.01 грн |
| 50+ | 26.35 грн |
| 100+ | 24.36 грн |
| 500+ | 19.90 грн |
| 1000+ | 18.09 грн |
| SMCJ28A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 32.7V; 34A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 32.7V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 32.7V; 34A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 32.7V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
на замовлення 790 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.13 грн |
| 16+ | 26.43 грн |
| 17+ | 24.94 грн |
| 50+ | 21.31 грн |
| 100+ | 19.90 грн |
| 250+ | 18.00 грн |
| 500+ | 16.60 грн |





















