Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (161826) > Сторінка 2683 з 2698
| Фото | Назва | Виробник | Інформація |
Доступність |
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SMCJ40CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 46.7V; 24A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 46.7V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
на замовлення 1036 шт: термін постачання 21-30 дні (днів) |
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SMCJ28A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 32.7V; 34A; unidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 32.7V Max. forward impulse current: 34A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
на замовлення 790 шт: термін постачання 21-30 дні (днів) |
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| STL120N10F8 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 125A Pulsed drain current: 500A Power dissipation: 150W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| VL53L3CXV0DH/1 | STMicroelectronics |
Category: UnclassifiedDescription: VL53L3CXV0DH/1 |
на замовлення 4500 шт: термін постачання 21-30 дні (днів) |
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| VIPER113XSTR | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; 30kHz; SSOP10; boost,buck,buck-boost,flyback; Ubr: 800V Type of integrated circuit: PMIC Mounting: SMD Case: SSOP10 Input voltage: 4.5...30V Supply voltage: 4.5...30V Frequency: 30kHz Breakdown voltage: 800V Topology: boost; buck; buck-boost; flyback |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| STM32H7A3RGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 280MHz; LQFP64; 1.62÷3.6VDC; Cmp: 1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 280MHz Mounting: SMD Number of inputs/outputs: 49 Case: LQFP64 Supply voltage: 1.62...3.6V DC Interface: CAN FD; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog Memory: 1MB FLASH; 1.4MB SRAM Operating temperature: -40...85°C Number of comparators: 1 Family: STM32H7 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LE33CZ | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,fixed; 3.3V; 150mA; TO92; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO Voltage drop: 0.2V Output voltage: 3.3V Output current: 0.15A Case: TO92 Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LE33CZ-TR | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; TO92; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.2V Output voltage: 3.3V Output current: 0.1A Case: TO92 Mounting: THT Manufacturer series: LEXX Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4...18V |
на замовлення 1502 шт: термін постачання 21-30 дні (днів) |
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| STF20N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 30W Case: TO220FP On-state resistance: 0.19Ω Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STF3LN80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2A Pulsed drain current: 8A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.25Ω Mounting: THT Gate charge: 2.63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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| STGWT60H65FB | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 375W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STGWT60H65DFB | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 375W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 68 шт: термін постачання 21-30 дні (днів) |
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| STGW60H65DRF | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 420W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 420W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 217nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STGWA60H65DFB | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STD30NF06LAG | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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| STW75N60DM6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 45A Pulsed drain current: 240A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 32mΩ Mounting: THT Gate charge: 117nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MJD44H11T4 | STMicroelectronics |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD Kind of package: reel; tape Pulsed collector current: 16A |
на замовлення 1400 шт: термін постачання 21-30 дні (днів) |
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| MJD44H11T4-A | STMicroelectronics |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD Kind of package: reel; tape Pulsed collector current: 16A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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D44H11 | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 50MHz |
на замовлення 351 шт: термін постачання 21-30 дні (днів) |
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| MJB44H11T4-A | STMicroelectronics |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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D45H11 | STMicroelectronics |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 80V; 10A; TO220AB Mounting: THT Collector current: 10A Kind of package: tube Type of transistor: PNP Case: TO220AB Collector-emitter voltage: 80V Polarisation: bipolar |
на замовлення 378 шт: термін постачання 21-30 дні (днів) |
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MJD45H11T4 | STMicroelectronics |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Mounting: SMD Collector current: 8A Kind of package: reel; tape Current gain: 40 Type of transistor: PNP Case: DPAK Collector-emitter voltage: 80V Polarisation: bipolar Power dissipation: 20W |
на замовлення 914 шт: термін постачання 21-30 дні (днів) |
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STP4NK80ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.89A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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STD1NK60T4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1A; 30W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Technology: SuperMesh™ Drain current: 1A Power dissipation: 30W On-state resistance: 8.5Ω Gate-source voltage: ±30V Kind of package: reel; tape Drain-source voltage: 600V Case: DPAK Kind of channel: enhancement |
на замовлення 466 шт: термін постачання 21-30 дні (днів) |
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STD1NK60-1 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Technology: SuperMesh™ Drain current: 0.63A Power dissipation: 30W On-state resistance: 8.5Ω Gate-source voltage: ±30V Kind of package: tube Drain-source voltage: 600V Case: I2PAK Kind of channel: enhancement Version: ESD |
на замовлення 267 шт: термін постачання 21-30 дні (днів) |
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| STS1NK60Z | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STL30N10F7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 120A; 4.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Pulsed drain current: 120A Power dissipation: 4.8W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TSC215ICT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.7÷26VDC; SC70-6 Type of integrated circuit: instrumentation amplifier Kind of integrated circuit: current sense Case: SC70-6 Number of channels: single; 1 Integrated circuit features: zero-drift Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input offset current: 20nA Input bias current: 35µA Slew rate: 0.42V/μs Voltage supply range: 2.7...26V DC Bandwidth: 60kHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TSC215IYCT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.7÷26VDC; SC70-6 Type of integrated circuit: instrumentation amplifier Kind of integrated circuit: current sense Case: SC70-6 Number of channels: single; 1 Mounting: SMT Operating temperature: -40...125°C Input offset current: 20nA Input bias current: 35µA Quiescent current: 115µA Input offset voltage: 4.5mV Slew rate: 0.42V/μs Voltage supply range: 2.7...26V DC Bandwidth: 60kHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TYN612RG | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 15mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 12A Load current: 8A Gate current: 15mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 140A |
на замовлення 232 шт: термін постачання 21-30 дні (днів) |
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TYN612MRG | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 12A Load current: 8A Gate current: 5mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 110A |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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TYN612MFP | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220FP; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 12A Load current: 8A Gate current: 5mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 120A |
на замовлення 235 шт: термін постачання 21-30 дні (днів) |
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| TYN612TRG | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 12A Load current: 8A Gate current: 5mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 140A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| L4984DTR | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: driver; PFC controller; SSOP10; 10.3÷22.5V Type of integrated circuit: driver Kind of integrated circuit: PFC controller Case: SSOP10 Mounting: SMD Operating temperature: -40...150°C Application: SMPS Kind of package: reel; tape Supply voltage: 10.3...22.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STW31N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 13.9A; 150W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.9A Power dissipation: 150W Case: TO247 Gate-source voltage: ±25V On-state resistance: 148mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 57 шт: термін постачання 21-30 дні (днів) |
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STP31N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 88A; 150W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 710V Drain current: 22A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 148mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 45nC Pulsed drain current: 88A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STL31N65M5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Power dissipation: 125W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 162mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 45nC Pulsed drain current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STP120NF10 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; 312W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 100V Drain current: 77A Power dissipation: 312W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 545 шт: термін постачання 21-30 дні (днів) |
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STM8S105K4T3C | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: LQFP32 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH Number of 16bit timers: 3 Number of 8bit timers: 1 Number of PWM channels: 4 Number of 10bit A/D converters: 7 Family: STM8S Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STM8S105K4T3CTR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: LQFP32 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH Number of 16bit timers: 3 Number of 8bit timers: 1 Number of PWM channels: 4 Number of 10bit A/D converters: 7 Family: STM8S Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STM8S105K4T6CTR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: LQFP32 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH Number of 16bit timers: 3 Number of 8bit timers: 1 Number of PWM channels: 4 Number of 10bit A/D converters: 7 Family: STM8S Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMCJ24CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 28.1V; 40A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 28.1V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STWD100NXWY3F | STMicroelectronics |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: timer Kind of RESET output: open drain; push-pull Active logical level: low Supply voltage: 2.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Mounting: SMD Number of channels: 1 Integrated circuit features: watchdog |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STWD100YNXWY3F | STMicroelectronics |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: timer Kind of RESET output: open drain; push-pull Active logical level: low Supply voltage: 2.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Mounting: SMD Number of channels: 1 Integrated circuit features: watchdog |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| VIPER27LD | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: driver Type of integrated circuit: driver |
на замовлення 1750 шт: термін постачання 21-30 дні (днів) |
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STP3N150 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3 Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 1.6A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 87 шт: термін постачання 21-30 дні (днів) |
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STW3N150 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247 Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 1.6A Power dissipation: 140W Case: TO247 Gate-source voltage: ±30V On-state resistance: 9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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STFW3N150 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 63W; TO3PF Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 1.6A Power dissipation: 63W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 91 шт: термін постачання 21-30 дні (днів) |
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STH3N150-2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 7A; 86W; DPAK Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 200V Drain current: 7A Power dissipation: 86W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TYN1012TRG | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Case: TO220AB Kind of package: tube Gate current: 5mA Max. load current: 12A Max. forward impulse current: 140A Type of thyristor: thyristor |
на замовлення 181 шт: термін постачання 21-30 дні (днів) |
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STTH812G-TR | STMicroelectronics |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1.2kV; 8A; 50ns; D2PAK; Ufmax: 1.25V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK Kind of package: reel; tape Max. forward voltage: 1.25V Max. forward impulse current: 80A |
на замовлення 423 шт: термін постачання 21-30 дні (днів) |
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STTH812FP | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220FPAC; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220FPAC Kind of package: tube Max. forward voltage: 1.25V Max. forward impulse current: 80A |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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STTH8S12D | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 32ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220AC Kind of package: tube Heatsink thickness: 1.23...1.32mm Max. forward voltage: 1.75V Max. forward impulse current: 70A |
на замовлення 308 шт: термін постачання 21-30 дні (днів) |
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STTH812DI | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220ACIns; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: TO220ACIns Kind of package: tube Heatsink thickness: 1.23...1.32mm Max. forward voltage: 1.25V Max. forward impulse current: 80A |
на замовлення 65 шт: термін постачання 21-30 дні (днів) |
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| STGW8M120DF3 | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 8A; 167W; TO247-3 Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Kind of package: tube Gate charge: 32nC Collector current: 8A Gate-emitter voltage: ±20V Pulsed collector current: 32A Power dissipation: 167W Collector-emitter voltage: 1.2kV Type of transistor: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KF33BD-TR | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; KFXX Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.4V Output voltage: 3.3V Output current: 1A Case: SO8 Mounting: SMD Manufacturer series: KFXX Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.5...20V |
на замовлення 7970 шт: термін постачання 21-30 дні (днів) |
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KF33BDT-TR | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; KFXX Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.4V Output voltage: 3.3V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: KFXX Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.5...20V |
на замовлення 1722 шт: термін постачання 21-30 дні (днів) |
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| STP22N60M6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 9.5A; Idm: 42A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.5A Pulsed drain current: 42A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.23Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BD139 | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; SOT32 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 12.5W Case: SOT32 Current gain: 25...250 Mounting: THT Kind of package: tube Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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L6386ED | STMicroelectronics |
Category: MOSFET/IGBT driversDescription: IC: driver; push-pull; SO14; 0.4A; 580V; Ch: 2; 400kHz; Usup: 17V Type of integrated circuit: driver Topology: push-pull Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver Case: SO14 Output current: 0.4A Output voltage: 580V Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Frequency: 400kHz Kind of package: tube Supply voltage: 17V DC supply current: 320µA |
на замовлення 65 шт: термін постачання 21-30 дні (днів) |
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| SMCJ40CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 46.7V; 24A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 46.7V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 46.7V; 24A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 46.7V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
на замовлення 1036 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.36 грн |
| 14+ | 30.81 грн |
| 20+ | 28.91 грн |
| 40+ | 27.01 грн |
| 50+ | 26.35 грн |
| 100+ | 24.36 грн |
| 500+ | 19.90 грн |
| 1000+ | 18.09 грн |
| SMCJ28A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 32.7V; 34A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 32.7V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 32.7V; 34A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 32.7V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
на замовлення 790 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.13 грн |
| 16+ | 26.43 грн |
| 17+ | 24.94 грн |
| 50+ | 21.31 грн |
| 100+ | 19.90 грн |
| 250+ | 18.00 грн |
| 500+ | 16.60 грн |
| STL120N10F8 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| VL53L3CXV0DH/1 |
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на замовлення 4500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4500+ | 207.23 грн |
| VIPER113XSTR |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 30kHz; SSOP10; boost,buck,buck-boost,flyback; Ubr: 800V
Type of integrated circuit: PMIC
Mounting: SMD
Case: SSOP10
Input voltage: 4.5...30V
Supply voltage: 4.5...30V
Frequency: 30kHz
Breakdown voltage: 800V
Topology: boost; buck; buck-boost; flyback
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 30kHz; SSOP10; boost,buck,buck-boost,flyback; Ubr: 800V
Type of integrated circuit: PMIC
Mounting: SMD
Case: SSOP10
Input voltage: 4.5...30V
Supply voltage: 4.5...30V
Frequency: 30kHz
Breakdown voltage: 800V
Topology: boost; buck; buck-boost; flyback
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 52.48 грн |
| STM32H7A3RGT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 280MHz; LQFP64; 1.62÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 280MHz
Mounting: SMD
Number of inputs/outputs: 49
Case: LQFP64
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 1MB FLASH; 1.4MB SRAM
Operating temperature: -40...85°C
Number of comparators: 1
Family: STM32H7
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 280MHz; LQFP64; 1.62÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 280MHz
Mounting: SMD
Number of inputs/outputs: 49
Case: LQFP64
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 1MB FLASH; 1.4MB SRAM
Operating temperature: -40...85°C
Number of comparators: 1
Family: STM32H7
Kind of core: 32-bit
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В кошику
од. на суму грн.
| LE33CZ | ![]() |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3.3V; 150mA; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 0.2V
Output voltage: 3.3V
Output current: 0.15A
Case: TO92
Mounting: THT
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,fixed; 3.3V; 150mA; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO
Voltage drop: 0.2V
Output voltage: 3.3V
Output current: 0.15A
Case: TO92
Mounting: THT
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| LE33CZ-TR |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 3.3V
Output current: 0.1A
Case: TO92
Mounting: THT
Manufacturer series: LEXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...18V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 3.3V
Output current: 0.1A
Case: TO92
Mounting: THT
Manufacturer series: LEXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...18V
на замовлення 1502 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.91 грн |
| 16+ | 27.09 грн |
| 25+ | 25.11 грн |
| 100+ | 22.71 грн |
| 250+ | 21.64 грн |
| 500+ | 20.98 грн |
| STF20N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
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В кошику
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| STF3LN80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.25Ω
Mounting: THT
Gate charge: 2.63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.25Ω
Mounting: THT
Gate charge: 2.63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 97.84 грн |
| 10+ | 57.81 грн |
| 25+ | 53.68 грн |
| STGWT60H65FB |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
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| STGWT60H65DFB |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 68 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 310.40 грн |
| 3+ | 272.54 грн |
| 5+ | 259.33 грн |
| 10+ | 247.76 грн |
| STGW60H65DRF |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 420W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 420W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 217nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 420W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 420W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 217nC
Kind of package: tube
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| STGWA60H65DFB |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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| STD30NF06LAG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 26.24 грн |
| STW75N60DM6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
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| MJD44H11T4 |
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Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 16A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 16A
на замовлення 1400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.48 грн |
| 10+ | 46.00 грн |
| 50+ | 31.80 грн |
| 100+ | 27.25 грн |
| 500+ | 20.65 грн |
| MJD44H11T4-A |
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Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 16A
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 16A
Application: automotive industry
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| D44H11 |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
на замовлення 351 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 88.05 грн |
| 10+ | 51.04 грн |
| 25+ | 44.43 грн |
| 50+ | 40.30 грн |
| 100+ | 36.67 грн |
| 200+ | 35.43 грн |
| MJB44H11T4-A |
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Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| D45H11 |
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Виробник: STMicroelectronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; TO220AB
Mounting: THT
Collector current: 10A
Kind of package: tube
Type of transistor: PNP
Case: TO220AB
Collector-emitter voltage: 80V
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; TO220AB
Mounting: THT
Collector current: 10A
Kind of package: tube
Type of transistor: PNP
Case: TO220AB
Collector-emitter voltage: 80V
Polarisation: bipolar
на замовлення 378 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 105.84 грн |
| 10+ | 57.65 грн |
| 50+ | 46.17 грн |
| 100+ | 42.12 грн |
| 250+ | 37.33 грн |
| MJD45H11T4 |
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Виробник: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 40
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Mounting: SMD
Collector current: 8A
Kind of package: reel; tape
Current gain: 40
Type of transistor: PNP
Case: DPAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 20W
на замовлення 914 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 70.26 грн |
| 10+ | 42.53 грн |
| 100+ | 29.98 грн |
| 500+ | 23.79 грн |
| STP4NK80ZFP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 118.10 грн |
| 5+ | 101.58 грн |
| STD1NK60T4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Technology: SuperMesh™
Drain current: 1A
Power dissipation: 30W
On-state resistance: 8.5Ω
Gate-source voltage: ±30V
Kind of package: reel; tape
Drain-source voltage: 600V
Case: DPAK
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Technology: SuperMesh™
Drain current: 1A
Power dissipation: 30W
On-state resistance: 8.5Ω
Gate-source voltage: ±30V
Kind of package: reel; tape
Drain-source voltage: 600V
Case: DPAK
Kind of channel: enhancement
на замовлення 466 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.05 грн |
| 10+ | 55.42 грн |
| 50+ | 43.61 грн |
| 100+ | 39.31 грн |
| STD1NK60-1 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Technology: SuperMesh™
Drain current: 0.63A
Power dissipation: 30W
On-state resistance: 8.5Ω
Gate-source voltage: ±30V
Kind of package: tube
Drain-source voltage: 600V
Case: I2PAK
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.63A; 30W; I2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Technology: SuperMesh™
Drain current: 0.63A
Power dissipation: 30W
On-state resistance: 8.5Ω
Gate-source voltage: ±30V
Kind of package: tube
Drain-source voltage: 600V
Case: I2PAK
Kind of channel: enhancement
Version: ESD
на замовлення 267 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.03 грн |
| 15+ | 29.48 грн |
| 75+ | 23.95 грн |
| STS1NK60Z |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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| STL30N10F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 120A; 4.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 4.8W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 120A; 4.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 4.8W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
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| TSC215ICT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.7÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Kind of integrated circuit: current sense
Case: SC70-6
Number of channels: single; 1
Integrated circuit features: zero-drift
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 20nA
Input bias current: 35µA
Slew rate: 0.42V/μs
Voltage supply range: 2.7...26V DC
Bandwidth: 60kHz
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.7÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Kind of integrated circuit: current sense
Case: SC70-6
Number of channels: single; 1
Integrated circuit features: zero-drift
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset current: 20nA
Input bias current: 35µA
Slew rate: 0.42V/μs
Voltage supply range: 2.7...26V DC
Bandwidth: 60kHz
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| TSC215IYCT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.7÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Kind of integrated circuit: current sense
Case: SC70-6
Number of channels: single; 1
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 20nA
Input bias current: 35µA
Quiescent current: 115µA
Input offset voltage: 4.5mV
Slew rate: 0.42V/μs
Voltage supply range: 2.7...26V DC
Bandwidth: 60kHz
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.7÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Kind of integrated circuit: current sense
Case: SC70-6
Number of channels: single; 1
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 20nA
Input bias current: 35µA
Quiescent current: 115µA
Input offset voltage: 4.5mV
Slew rate: 0.42V/μs
Voltage supply range: 2.7...26V DC
Bandwidth: 60kHz
Application: automotive industry
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| TYN612RG |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
на замовлення 232 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.25 грн |
| 50+ | 38.57 грн |
| 100+ | 36.09 грн |
| TYN612MRG |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 110A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 110A
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 84.49 грн |
| 11+ | 41.21 грн |
| 25+ | 36.09 грн |
| 50+ | 32.87 грн |
| TYN612MFP |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
на замовлення 235 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 93.39 грн |
| 10+ | 52.86 грн |
| 25+ | 45.51 грн |
| 50+ | 40.88 грн |
| 100+ | 36.83 грн |
| TYN612TRG |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 12A
Load current: 8A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 140A
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| L4984DTR |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; SSOP10; 10.3÷22.5V
Type of integrated circuit: driver
Kind of integrated circuit: PFC controller
Case: SSOP10
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Kind of package: reel; tape
Supply voltage: 10.3...22.5V
Category: Drivers - integrated circuits
Description: IC: driver; PFC controller; SSOP10; 10.3÷22.5V
Type of integrated circuit: driver
Kind of integrated circuit: PFC controller
Case: SSOP10
Mounting: SMD
Operating temperature: -40...150°C
Application: SMPS
Kind of package: reel; tape
Supply voltage: 10.3...22.5V
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| STW31N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 13.9A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.9A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 13.9A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.9A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 57 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 273.94 грн |
| 3+ | 223.81 грн |
| 10+ | 180.87 грн |
| STP31N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 88A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 88A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 88A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 88A
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| STL31N65M5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 162mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 162mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 60A
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| STP120NF10 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; 312W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 77A
Power dissipation: 312W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; 312W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 77A
Power dissipation: 312W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 545 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 269.49 грн |
| 3+ | 228.77 грн |
| 10+ | 187.48 грн |
| 25+ | 153.61 грн |
| 50+ | 132.97 грн |
| 100+ | 118.10 грн |
| 250+ | 107.36 грн |
| 500+ | 102.41 грн |
| STM8S105K4T3C |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
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| STM8S105K4T3CTR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
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| STM8S105K4T6CTR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
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| SMCJ24CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.1V; 40A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.1V; 40A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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| STWD100NXWY3F |
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Виробник: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
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| STWD100YNXWY3F |
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Виробник: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
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| VIPER27LD |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
на замовлення 1750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 92.50 грн |
| STP3N150 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 87 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 316.63 грн |
| 10+ | 242.81 грн |
| STW3N150 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 335.31 грн |
| 5+ | 239.51 грн |
| 10+ | 227.12 грн |
| STFW3N150 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 63W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 63W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 91 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 257.04 грн |
| 5+ | 221.34 грн |
| STH3N150-2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 7A; 86W; DPAK
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 7A
Power dissipation: 86W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 7A; 86W; DPAK
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 7A
Power dissipation: 86W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| TYN1012TRG |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Case: TO220AB
Kind of package: tube
Gate current: 5mA
Max. load current: 12A
Max. forward impulse current: 140A
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Case: TO220AB
Kind of package: tube
Gate current: 5mA
Max. load current: 12A
Max. forward impulse current: 140A
Type of thyristor: thyristor
на замовлення 181 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 128.96 грн |
| 10+ | 71.52 грн |
| 25+ | 63.01 грн |
| 50+ | 57.56 грн |
| 100+ | 52.44 грн |
| STTH812G-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 50ns; D2PAK; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Kind of package: reel; tape
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 50ns; D2PAK; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Kind of package: reel; tape
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
на замовлення 423 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 86.27 грн |
| 10+ | 49.39 грн |
| 100+ | 39.31 грн |
| 250+ | 35.43 грн |
| STTH812FP |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220FPAC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220FPAC
Kind of package: tube
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220FPAC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220FPAC
Kind of package: tube
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.93 грн |
| STTH8S12D |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 1.75V
Max. forward impulse current: 70A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 1.75V
Max. forward impulse current: 70A
на замовлення 308 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 73.82 грн |
| 12+ | 36.17 грн |
| STTH812DI |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220ACIns; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220ACIns
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220ACIns; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220ACIns
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
на замовлення 65 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 95.17 грн |
| 10+ | 75.16 грн |
| 50+ | 69.37 грн |
| STGW8M120DF3 |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 32A
Power dissipation: 167W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 32A
Power dissipation: 167W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
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| KF33BD-TR |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; KFXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Manufacturer series: KFXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; KFXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Manufacturer series: KFXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...20V
на замовлення 7970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 49.81 грн |
| 11+ | 38.32 грн |
| 12+ | 35.43 грн |
| 25+ | 31.96 грн |
| 50+ | 29.98 грн |
| 100+ | 28.25 грн |
| 250+ | 26.68 грн |
| 500+ | 25.77 грн |
| 2500+ | 24.28 грн |
| KF33BDT-TR |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; KFXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: KFXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; KFXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: KFXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...20V
на замовлення 1722 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.03 грн |
| 12+ | 37.16 грн |
| 13+ | 34.27 грн |
| 25+ | 31.14 грн |
| 50+ | 29.24 грн |
| 100+ | 27.67 грн |
| 125+ | 27.34 грн |
| 250+ | 26.35 грн |
| 500+ | 25.60 грн |
| STP22N60M6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 9.5A; Idm: 42A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.5A
Pulsed drain current: 42A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 9.5A; Idm: 42A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.5A
Pulsed drain current: 42A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
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| BD139 |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: SOT32
Current gain: 25...250
Mounting: THT
Kind of package: tube
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: SOT32
Current gain: 25...250
Mounting: THT
Kind of package: tube
Frequency: 50MHz
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| L6386ED |
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Виробник: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO14; 0.4A; 580V; Ch: 2; 400kHz; Usup: 17V
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO14
Output current: 0.4A
Output voltage: 580V
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 400kHz
Kind of package: tube
Supply voltage: 17V
DC supply current: 320µA
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO14; 0.4A; 580V; Ch: 2; 400kHz; Usup: 17V
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO14
Output current: 0.4A
Output voltage: 580V
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 400kHz
Kind of package: tube
Supply voltage: 17V
DC supply current: 320µA
на замовлення 65 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 184.11 грн |
| 10+ | 152.79 грн |
| 25+ | 137.10 грн |
| 50+ | 134.62 грн |























