Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (161826) > Сторінка 2680 з 2698
| Фото | Назва | Виробник | Інформація |
Доступність |
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| LM2903WYPT | STMicroelectronics |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; TSSOP8; reel,tape Input offset current: 150nA Input bias current: 0.4µA Input offset voltage: 15mV Number of comparators: 2 Operating voltage: 2...36V Kind of output: open collector Type of integrated circuit: comparator Case: TSSOP8 Kind of comparator: low-power Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STPS2H100 | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 2A; DO41; Ufmax: 0.65V; reel Semiconductor structure: single diode Max. off-state voltage: 100V Load current: 2A Case: DO41 Max. forward voltage: 0.65V Max. forward impulse current: 50A Max. load current: 10A Mounting: THT Type of diode: Schottky rectifying Kind of package: reel |
на замовлення 552 шт: термін постачання 21-30 дні (днів) |
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STPS1L30U | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape Semiconductor structure: single diode Max. off-state voltage: 30V Load current: 1A Case: SMB Max. forward voltage: 0.26V Max. forward impulse current: 75A Max. load current: 10A Mounting: SMD Type of diode: Schottky rectifying Kind of package: reel; tape |
на замовлення 16918 шт: термін постачання 21-30 дні (днів) |
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STPS2H100A | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape Semiconductor structure: single diode Max. off-state voltage: 100V Load current: 2A Case: SMA Max. forward voltage: 0.65V Max. forward impulse current: 75A Mounting: SMD Type of diode: Schottky rectifying Kind of package: reel; tape |
на замовлення 4998 шт: термін постачання 21-30 дні (днів) |
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STPS140A | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.43V Max. forward impulse current: 60A Kind of package: reel; tape Max. load current: 7A |
на замовлення 8157 шт: термін постачання 21-30 дні (днів) |
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STPS3L40UF | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB flat; SMD; 40V; 3A; reel,tape Semiconductor structure: single diode Max. off-state voltage: 40V Load current: 3A Case: SMB flat Max. forward voltage: 0.44V Max. forward impulse current: 75A Mounting: SMD Type of diode: Schottky rectifying Kind of package: reel; tape |
на замовлення 3786 шт: термін постачання 21-30 дні (днів) |
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STPS80170CW | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 170V; 40Ax2; TO247; Ufmax: 0.68V Semiconductor structure: common cathode; double Max. off-state voltage: 170V Load current: 40A x2 Case: TO247 Max. forward voltage: 0.68V Max. forward impulse current: 0.5kA Max. load current: 80A Mounting: THT Type of diode: Schottky rectifying Kind of package: tube |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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STPS41H100CT | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.62V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.62V Max. forward impulse current: 220A Kind of package: tube Heatsink thickness: 1.23...1.32mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STP8NK80Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 242 шт: термін постачання 21-30 дні (днів) |
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STP8NK80ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 199 шт: термін постачання 21-30 дні (днів) |
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| ESDCAN04-2BLY | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 3.7A; 230W; bidirectional,double; ESD Mounting: SMD Type of diode: TVS array Leakage current: 50nA Max. forward impulse current: 3.7A Max. off-state voltage: 25.5V Peak pulse power dissipation: 230W Application: automotive industry; CAN Semiconductor structure: bidirectional; double Version: ESD |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| ACS102-6TA-TR | STMicroelectronics |
Category: TriacsDescription: Triac Type of thyristor: triac |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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LDCL015MR | STMicroelectronics |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 0.8÷7V; 0.15A; SMD Operating temperature: -40...125°C Voltage drop: 0.5mV Output current: 0.15A Output voltage: 0.8...7V Number of channels: 1 Input voltage: 1.8...5.5V Kind of voltage regulator: adjustable; LDO; linear Kind of package: reel; tape Mounting: SMD Case: SOT23-5 Type of integrated circuit: voltage regulator |
на замовлення 11150 шт: термін постачання 21-30 дні (днів) |
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| SMBJ22CA-TR | STMicroelectronics |
Category: Diodes - UnclassifiedDescription: SMBJ22CA-TR |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| STD8N60DM2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8A; 85W; DPAK,TO252 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 85W Case: DPAK; TO252 On-state resistance: 570mΩ Mounting: SMD Gate charge: 4nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STF18N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; 25W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 25W Case: TO220FP On-state resistance: 255mΩ Mounting: THT Kind of channel: enhancement Gate charge: 21.5nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BTA20-700BWRG | STMicroelectronics |
Category: TriacsDescription: Triac; 700V; 20A; TO220ABIns; Igt: 50mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 700V Max. load current: 20A Case: TO220ABIns Gate current: 50mA Technology: Snubberless™ Mounting: THT Kind of package: tube |
на замовлення 101 шт: термін постачання 21-30 дні (днів) |
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BTA20-700CWRG | STMicroelectronics |
Category: TriacsDescription: Triac; 700V; 20A; TO220ABIns; Igt: 35mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 700V Max. load current: 20A Case: TO220ABIns Gate current: 35mA Technology: Snubberless™ Mounting: THT Kind of package: tube |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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DB3 | STMicroelectronics |
Category: DiacsDescription: Diac; 2A; DO35; 28÷36V; THT; Ammo Pack Type of thyristor: diac Max. load current: 2A Case: DO35 Breakover voltage: 28...36V Mounting: THT Kind of package: Ammo Pack |
на замовлення 1268 шт: термін постачання 21-30 дні (днів) |
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1.5KE56CA | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 56V; 19.5A; bidirectional; CB429; 1.5kW Type of diode: TVS Max. off-state voltage: 47.8V Breakdown voltage: 56V Max. forward impulse current: 19.5A Semiconductor structure: bidirectional Case: CB429 Mounting: THT Leakage current: 1mA Peak pulse power dissipation: 1.5kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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VND5T016ASPTR-E | STMicroelectronics |
Category: Drivers - integrated circuitsDescription: IC: power switch; high-side; 70A; PowerSO16; 8÷36V; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 70A Mounting: SMD Number of channels: 2 Operating temperature: -40...150°C Case: PowerSO16 Supply voltage: 8...36V Kind of package: reel; tape On-state resistance: 32mΩ |
на замовлення 527 шт: термін постачання 21-30 дні (днів) |
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STF3NK80Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.57A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 126 шт: термін постачання 21-30 дні (днів) |
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STD3NK80ZT4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.57A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1427 шт: термін постачання 21-30 дні (днів) |
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STD3NK80Z-1 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; I2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.57A Power dissipation: 70W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 820 шт: термін постачання 21-30 дні (днів) |
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STP3NK80Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.57A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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TBA820M | STMicroelectronics |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; P: 1W; 16VDC; Ch: 1; Amp.class: B; DIP8 Type of integrated circuit: audio amplifier Mounting: THT Supply voltage: 16V DC Number of channels: 1 Amplifier class: B Case: DIP8 Power: 1W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMCJ22A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 25.7V; 44A; unidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 22V Breakdown voltage: 25.7V Max. forward impulse current: 44A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 1.5KE400CARL | STMicroelectronics |
Category: Diodes - UnclassifiedDescription: 1.5KE400CARL |
на замовлення 1900 шт: термін постачання 21-30 дні (днів) |
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| L6207D013TR | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; H-bridge; motor controller; SO24; 2.8A; Ch: 4; 100kHz Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: motor controller Case: SO24 Output current: 2.8A Number of channels: 4 Mounting: SMD On-state resistance: 0.3Ω Operating temperature: -25...125°C Application: DC motors Frequency: 0.1MHz Kind of package: reel; tape Supply voltage: 8...52V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| A5973D013TR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuitsDescription: Driver; DC/DC converter; Uout: 1.235÷35VDC; 2A; HSOP8; SMD; 250kHz Kind of package: reel; tape Kind of integrated circuit: DC/DC converter Type of integrated circuit: driver Case: HSOP8 Mounting: SMD Operating temperature: -40...150°C Output current: 2A Number of channels: 1 Output voltage: 1.235...35V DC Operating voltage: 4...36V DC Frequency: 250kHz Topology: buck |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE200ARL | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS Type of diode: TVS |
на замовлення 9500 шт: термін постачання 21-30 дні (днів) |
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1N5818 | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: Ammo Pack Max. load current: 10A |
на замовлення 2720 шт: термін постачання 21-30 дні (днів) |
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| STB30NF20L | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 30A; 150W Type of transistor: N-MOSFET Technology: STripFET™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 30A Power dissipation: 150W Case: D2PAK; TO263 On-state resistance: 65mΩ Mounting: SMD Gate charge: 65nC Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STB30NF20L | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; STripFET™; N; 200V; 30A; 150W; D2PAK,TO263 Type of transistor: N-MOSFET Technology: STripFET™ Polarisation: N Drain-source voltage: 200V Drain current: 30A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: 20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 65nC Kind of channel: enhancement Application: automotive industry Electrical mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STM32G081CBT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 1.7÷3.6VDC; STM32G0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 44 Case: LQFP48 Supply voltage: 1.7...3.6V DC Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB Kind of architecture: Cortex M0+ Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM Memory: 36kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit D/A converters: 2 Family: STM32G0 Kind of core: 32-bit Number of 16bit timers: 10 Number of 12bit A/D converters: 17 Number of 8bit timers: 3 Number of 32bit timers: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STM32G081CBT6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 1.7÷3.6VDC; STM32G0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 44 Case: LQFP48 Supply voltage: 1.7...3.6V DC Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4 Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit D/A converters: 2 Family: STM32G0 Kind of core: 32-bit Number of 16bit timers: 10 Number of 12bit A/D converters: 17 Kind of package: reel; tape Number of 32bit timers: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32G081CBU6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; UFQFPN48; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 44 Case: UFQFPN48 Supply voltage: 1.7...3.6V DC Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB Kind of architecture: Cortex M0+ Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM Memory: 36kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit D/A converters: 2 Family: STM32G0 Kind of core: 32-bit Number of 16bit timers: 10 Number of 12bit A/D converters: 17 Number of 8bit timers: 3 Number of 32bit timers: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32G081EBY6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; WLCSP25; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 23 Case: WLCSP25 Supply voltage: 1.7...3.6V DC Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4 Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit D/A converters: 2 Family: STM32G0 Kind of core: 32-bit Number of 16bit timers: 10 Number of 12bit A/D converters: 12 Kind of package: reel; tape Number of 32bit timers: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32G081GBU6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; UFQFPN28; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 26 Case: UFQFPN28 Supply voltage: 1.7...3.6V DC Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB Kind of architecture: Cortex M0+ Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM Memory: 36kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit D/A converters: 2 Family: STM32G0 Kind of core: 32-bit Number of 16bit timers: 10 Number of 12bit A/D converters: 12 Number of 8bit timers: 3 Number of 32bit timers: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32G081KBT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP32; 1.7÷3.6VDC; STM32G0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 30 Case: LQFP32 Supply voltage: 1.7...3.6V DC Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB Kind of architecture: Cortex M0+ Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM Memory: 36kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 13 Number of 12bit D/A converters: 2 Number of 16bit timers: 10 Number of 8bit timers: 3 Number of 32bit timers: 1 Family: STM32G0 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32G0B1RET6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; Cmp: 3 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 60 Case: LQFP64 Supply voltage: 1.7...3.6V DC Interface: CAN-FD; GPIO; HDMI CEC; I2C; I2S; IrDA; LIN; SPI; SWD; USART; USB Kind of architecture: Cortex M0+ Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM; watchdog Memory: 144kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 Number of 32bit timers: 1 Family: STM32G0 Kind of core: 32-bit Number of comparators: 3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32G0B1RET6N | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 58 Case: LQFP64 Supply voltage: 1.7...3.6V DC Interface: CAN-FD x2; HDMI CEC; I2C x3; LPUART; SPI x3; USART x6; USB Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; watchdog Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 19 Number of 12bit D/A converters: 2 Number of 16bit timers: 12 Number of 32bit timers: 1 Family: STM32G0 Kind of package: in-tray Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STH240N10F7-2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; D2PAK,TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 300W Case: D2PAK; TO263AB On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 160nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LD3985M28R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.1V Output voltage: 2.8V Output current: 0.15A Case: SOT23-5 Mounting: SMD Manufacturer series: LD3985 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 2.5...6V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BZW50-27RL | STMicroelectronics |
Category: Diodes - UnclassifiedDescription: BZW50-27RL |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| STM32G070RBT6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 59 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: I2C x2; SPI x2; USART x4 Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 19 Number of 16bit timers: 8 Family: STM32G0 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STL20N6F7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 12A; 78W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 78W Case: PowerFLAT 3.3x3.3 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: STripFET™ F7 |
на замовлення 2164 шт: термін постачання 21-30 дні (днів) |
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| STL260N4F7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 188W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2993 шт: термін постачання 21-30 дні (днів) |
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| STL260N4LF7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 188W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STL22N65M5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 710V; 15A; Idm: 60A; 110W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 710V Drain current: 15A Pulsed drain current: 60A Power dissipation: 110W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STL210N4LF7AG | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 150W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STL21N65M5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 68A Power dissipation: 125W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STL220N4F8 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STL225N6F7AG | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 480A; 188W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Pulsed drain current: 480A Power dissipation: 188W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STL26N60DM6 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 60A; 110W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Pulsed drain current: 60A Power dissipation: 110W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.215Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STL26N65DM2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 53A; 140W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 53A Power dissipation: 140W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 206mΩ Mounting: SMD Gate charge: 35.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STL285N4F7AG | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 480A Power dissipation: 188W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 1.1mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STL2N80K5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.5A; Idm: 6A; 33W Case: PowerFLAT 5x6 Mounting: SMD Kind of package: reel; tape Gate charge: 5nC On-state resistance: 4.5Ω Drain current: 1.5A Pulsed drain current: 6A Power dissipation: 33W Gate-source voltage: ±30V Drain-source voltage: 800V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TL064CD | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 4; 6÷36VDC; SO14; tube Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: 4 Mounting: SMT Voltage supply range: 6...36V DC Case: SO14 Operating temperature: 0...70°C Slew rate: 3.5V/μs Integrated circuit features: low power Kind of package: tube |
на замовлення 132 шт: термін постачання 21-30 дні (днів) |
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STW9NK90Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 5A Power dissipation: 160W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 151 шт: термін постачання 21-30 дні (днів) |
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| LM2903WYPT |
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Виробник: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; TSSOP8; reel,tape
Input offset current: 150nA
Input bias current: 0.4µA
Input offset voltage: 15mV
Number of comparators: 2
Operating voltage: 2...36V
Kind of output: open collector
Type of integrated circuit: comparator
Case: TSSOP8
Kind of comparator: low-power
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; TSSOP8; reel,tape
Input offset current: 150nA
Input bias current: 0.4µA
Input offset voltage: 15mV
Number of comparators: 2
Operating voltage: 2...36V
Kind of output: open collector
Type of integrated circuit: comparator
Case: TSSOP8
Kind of comparator: low-power
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
товару немає в наявності
В кошику
од. на суму грн.
| STPS2H100 |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 2A; DO41; Ufmax: 0.65V; reel
Semiconductor structure: single diode
Max. off-state voltage: 100V
Load current: 2A
Case: DO41
Max. forward voltage: 0.65V
Max. forward impulse current: 50A
Max. load current: 10A
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 2A; DO41; Ufmax: 0.65V; reel
Semiconductor structure: single diode
Max. off-state voltage: 100V
Load current: 2A
Case: DO41
Max. forward voltage: 0.65V
Max. forward impulse current: 50A
Max. load current: 10A
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: reel
на замовлення 552 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.45 грн |
| 46+ | 9.08 грн |
| 54+ | 7.76 грн |
| 63+ | 6.61 грн |
| 100+ | 5.45 грн |
| STPS1L30U |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 30V
Load current: 1A
Case: SMB
Max. forward voltage: 0.26V
Max. forward impulse current: 75A
Max. load current: 10A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 30V
Load current: 1A
Case: SMB
Max. forward voltage: 0.26V
Max. forward impulse current: 75A
Max. load current: 10A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
на замовлення 16918 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.79 грн |
| 24+ | 17.67 грн |
| 27+ | 15.61 грн |
| 100+ | 9.99 грн |
| 500+ | 7.10 грн |
| 1000+ | 6.03 грн |
| 2500+ | 5.45 грн |
| STPS2H100A |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 100V
Load current: 2A
Case: SMA
Max. forward voltage: 0.65V
Max. forward impulse current: 75A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 100V
Load current: 2A
Case: SMA
Max. forward voltage: 0.65V
Max. forward impulse current: 75A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
на замовлення 4998 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.01 грн |
| 40+ | 10.49 грн |
| 45+ | 9.25 грн |
| 100+ | 7.35 грн |
| 500+ | 5.70 грн |
| 1000+ | 5.12 грн |
| 2000+ | 4.87 грн |
| STPS140A |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 60A
Kind of package: reel; tape
Max. load current: 7A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 60A
Kind of package: reel; tape
Max. load current: 7A
на замовлення 8157 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.24 грн |
| 30+ | 13.79 грн |
| 37+ | 11.36 грн |
| 50+ | 9.86 грн |
| 100+ | 8.57 грн |
| 500+ | 6.34 грн |
| 1000+ | 5.63 грн |
| 2500+ | 4.86 грн |
| 5000+ | 4.49 грн |
| STPS3L40UF |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 40V; 3A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Load current: 3A
Case: SMB flat
Max. forward voltage: 0.44V
Max. forward impulse current: 75A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 40V; 3A; reel,tape
Semiconductor structure: single diode
Max. off-state voltage: 40V
Load current: 3A
Case: SMB flat
Max. forward voltage: 0.44V
Max. forward impulse current: 75A
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
на замовлення 3786 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.68 грн |
| 20+ | 20.98 грн |
| 22+ | 18.91 грн |
| 26+ | 16.27 грн |
| 100+ | 12.80 грн |
| 500+ | 9.42 грн |
| 1000+ | 8.18 грн |
| 2000+ | 7.10 грн |
| STPS80170CW |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 170V; 40Ax2; TO247; Ufmax: 0.68V
Semiconductor structure: common cathode; double
Max. off-state voltage: 170V
Load current: 40A x2
Case: TO247
Max. forward voltage: 0.68V
Max. forward impulse current: 0.5kA
Max. load current: 80A
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 170V; 40Ax2; TO247; Ufmax: 0.68V
Semiconductor structure: common cathode; double
Max. off-state voltage: 170V
Load current: 40A x2
Case: TO247
Max. forward voltage: 0.68V
Max. forward impulse current: 0.5kA
Max. load current: 80A
Mounting: THT
Type of diode: Schottky rectifying
Kind of package: tube
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 353.99 грн |
| 5+ | 255.20 грн |
| 10+ | 217.21 грн |
| STPS41H100CT |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.62V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.62V
Max. forward impulse current: 220A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.62V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.62V
Max. forward impulse current: 220A
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
товару немає в наявності
В кошику
од. на суму грн.
| STP8NK80Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 242 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.28 грн |
| 10+ | 71.85 грн |
| 50+ | 67.72 грн |
| 100+ | 62.77 грн |
| STP8NK80ZFP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 199 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 229.47 грн |
| 5+ | 168.48 грн |
| 10+ | 141.23 грн |
| 25+ | 110.67 грн |
| 50+ | 98.28 грн |
| 100+ | 92.50 грн |
| ESDCAN04-2BLY |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 3.7A; 230W; bidirectional,double; ESD
Mounting: SMD
Type of diode: TVS array
Leakage current: 50nA
Max. forward impulse current: 3.7A
Max. off-state voltage: 25.5V
Peak pulse power dissipation: 230W
Application: automotive industry; CAN
Semiconductor structure: bidirectional; double
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 3.7A; 230W; bidirectional,double; ESD
Mounting: SMD
Type of diode: TVS array
Leakage current: 50nA
Max. forward impulse current: 3.7A
Max. off-state voltage: 25.5V
Peak pulse power dissipation: 230W
Application: automotive industry; CAN
Semiconductor structure: bidirectional; double
Version: ESD
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.00 грн |
| 70+ | 5.95 грн |
| 100+ | 4.47 грн |
| 250+ | 4.01 грн |
| 500+ | 3.71 грн |
| 1000+ | 3.53 грн |
| 3000+ | 3.18 грн |
| ACS102-6TA-TR |
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на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 15.56 грн |
| LDCL015MR |
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Виробник: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷7V; 0.15A; SMD
Operating temperature: -40...125°C
Voltage drop: 0.5mV
Output current: 0.15A
Output voltage: 0.8...7V
Number of channels: 1
Input voltage: 1.8...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-5
Type of integrated circuit: voltage regulator
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷7V; 0.15A; SMD
Operating temperature: -40...125°C
Voltage drop: 0.5mV
Output current: 0.15A
Output voltage: 0.8...7V
Number of channels: 1
Input voltage: 1.8...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-5
Type of integrated circuit: voltage regulator
на замовлення 11150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 61.12 грн |
| 25+ | 56.99 грн |
| 50+ | 54.51 грн |
| 100+ | 52.03 грн |
| 250+ | 49.55 грн |
| 500+ | 47.90 грн |
| 1000+ | 47.08 грн |
| SMBJ22CA-TR |
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на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 7.20 грн |
| STD8N60DM2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 85W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 85W
Case: DPAK; TO252
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 4nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 85W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 85W
Case: DPAK; TO252
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 4nC
Kind of channel: enhancement
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| STF18N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 255mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 21.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 255mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 21.5nC
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| BTA20-700BWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 700V; 20A; TO220ABIns; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 20A
Case: TO220ABIns
Gate current: 50mA
Technology: Snubberless™
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 700V; 20A; TO220ABIns; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 20A
Case: TO220ABIns
Gate current: 50mA
Technology: Snubberless™
Mounting: THT
Kind of package: tube
на замовлення 101 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 157.74 грн |
| 10+ | 147.01 грн |
| BTA20-700CWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 700V; 20A; TO220ABIns; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 20A
Case: TO220ABIns
Gate current: 35mA
Technology: Snubberless™
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 700V; 20A; TO220ABIns; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 700V
Max. load current: 20A
Case: TO220ABIns
Gate current: 35mA
Technology: Snubberless™
Mounting: THT
Kind of package: tube
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.92 грн |
| 10+ | 124.71 грн |
| 50+ | 109.84 грн |
| DB3 |
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Виробник: STMicroelectronics
Category: Diacs
Description: Diac; 2A; DO35; 28÷36V; THT; Ammo Pack
Type of thyristor: diac
Max. load current: 2A
Case: DO35
Breakover voltage: 28...36V
Mounting: THT
Kind of package: Ammo Pack
Category: Diacs
Description: Diac; 2A; DO35; 28÷36V; THT; Ammo Pack
Type of thyristor: diac
Max. load current: 2A
Case: DO35
Breakover voltage: 28...36V
Mounting: THT
Kind of package: Ammo Pack
на замовлення 1268 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.23 грн |
| 38+ | 11.07 грн |
| 43+ | 9.66 грн |
| 100+ | 5.34 грн |
| 500+ | 3.60 грн |
| 1000+ | 3.11 грн |
| 1.5KE56CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 56V; 19.5A; bidirectional; CB429; 1.5kW
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 19.5A
Semiconductor structure: bidirectional
Case: CB429
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 56V; 19.5A; bidirectional; CB429; 1.5kW
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 19.5A
Semiconductor structure: bidirectional
Case: CB429
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
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| VND5T016ASPTR-E |
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Виробник: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 70A; PowerSO16; 8÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 70A
Mounting: SMD
Number of channels: 2
Operating temperature: -40...150°C
Case: PowerSO16
Supply voltage: 8...36V
Kind of package: reel; tape
On-state resistance: 32mΩ
Category: Drivers - integrated circuits
Description: IC: power switch; high-side; 70A; PowerSO16; 8÷36V; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 70A
Mounting: SMD
Number of channels: 2
Operating temperature: -40...150°C
Case: PowerSO16
Supply voltage: 8...36V
Kind of package: reel; tape
On-state resistance: 32mΩ
на замовлення 527 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 447.37 грн |
| 5+ | 364.21 грн |
| 10+ | 348.52 грн |
| 50+ | 341.92 грн |
| STF3NK80Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 126 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 185.89 грн |
| 10+ | 99.93 грн |
| 50+ | 84.24 грн |
| 100+ | 78.46 грн |
| STD3NK80ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1427 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 132.52 грн |
| 5+ | 95.14 грн |
| 10+ | 85.48 грн |
| 50+ | 67.56 грн |
| 100+ | 61.53 грн |
| 250+ | 54.84 грн |
| 500+ | 50.63 грн |
| 1000+ | 46.99 грн |
| STD3NK80Z-1 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; I2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; I2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 820 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 105.84 грн |
| 75+ | 46.41 грн |
| 525+ | 41.38 грн |
| STP3NK80Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 96 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 113.84 грн |
| 10+ | 85.73 грн |
| 25+ | 66.98 грн |
| 50+ | 51.37 грн |
| TBA820M |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; P: 1W; 16VDC; Ch: 1; Amp.class: B; DIP8
Type of integrated circuit: audio amplifier
Mounting: THT
Supply voltage: 16V DC
Number of channels: 1
Amplifier class: B
Case: DIP8
Power: 1W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; P: 1W; 16VDC; Ch: 1; Amp.class: B; DIP8
Type of integrated circuit: audio amplifier
Mounting: THT
Supply voltage: 16V DC
Number of channels: 1
Amplifier class: B
Case: DIP8
Power: 1W
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| SMCJ22A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 25.7V; 44A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 25.7V
Max. forward impulse current: 44A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 25.7V; 44A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 25.7V
Max. forward impulse current: 44A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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| 1.5KE400CARL |
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на замовлення 1900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1900+ | 28.28 грн |
| L6207D013TR |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 2.8A; Ch: 4; 100kHz
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: motor controller
Case: SO24
Output current: 2.8A
Number of channels: 4
Mounting: SMD
On-state resistance: 0.3Ω
Operating temperature: -25...125°C
Application: DC motors
Frequency: 0.1MHz
Kind of package: reel; tape
Supply voltage: 8...52V
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 2.8A; Ch: 4; 100kHz
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: motor controller
Case: SO24
Output current: 2.8A
Number of channels: 4
Mounting: SMD
On-state resistance: 0.3Ω
Operating temperature: -25...125°C
Application: DC motors
Frequency: 0.1MHz
Kind of package: reel; tape
Supply voltage: 8...52V
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| A5973D013TR |
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Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uout: 1.235÷35VDC; 2A; HSOP8; SMD; 250kHz
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: driver
Case: HSOP8
Mounting: SMD
Operating temperature: -40...150°C
Output current: 2A
Number of channels: 1
Output voltage: 1.235...35V DC
Operating voltage: 4...36V DC
Frequency: 250kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uout: 1.235÷35VDC; 2A; HSOP8; SMD; 250kHz
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: driver
Case: HSOP8
Mounting: SMD
Operating temperature: -40...150°C
Output current: 2A
Number of channels: 1
Output voltage: 1.235...35V DC
Operating voltage: 4...36V DC
Frequency: 250kHz
Topology: buck
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| 1.5KE200ARL |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 9500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3800+ | 14.76 грн |
| 1N5818 |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
на замовлення 2720 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.23 грн |
| 43+ | 9.83 грн |
| 100+ | 6.81 грн |
| 500+ | 5.05 грн |
| 1000+ | 4.36 грн |
| 2000+ | 3.71 грн |
| STB30NF20L |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 30A; 150W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 150W
Case: D2PAK; TO263
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 30A; 150W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 150W
Case: D2PAK; TO263
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Application: automotive industry
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| STB30NF20L |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; N; 200V; 30A; 150W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: N
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; N; 200V; 30A; 150W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: N
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
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| STM32G081CBT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 44
Case: LQFP48
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 17
Number of 8bit timers: 3
Number of 32bit timers: 1
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 44
Case: LQFP48
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 17
Number of 8bit timers: 3
Number of 32bit timers: 1
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| STM32G081CBT6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 44
Case: LQFP48
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 17
Kind of package: reel; tape
Number of 32bit timers: 1
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 44
Case: LQFP48
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 17
Kind of package: reel; tape
Number of 32bit timers: 1
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| STM32G081CBU6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 44
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 17
Number of 8bit timers: 3
Number of 32bit timers: 1
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 44
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 17
Number of 8bit timers: 3
Number of 32bit timers: 1
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| STM32G081EBY6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; WLCSP25; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 23
Case: WLCSP25
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 12
Kind of package: reel; tape
Number of 32bit timers: 1
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; WLCSP25; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 23
Case: WLCSP25
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C x2; LPUART; SPI x2; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; AES; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 12
Kind of package: reel; tape
Number of 32bit timers: 1
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| STM32G081GBU6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN28; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN28
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 12
Number of 8bit timers: 3
Number of 32bit timers: 1
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; UFQFPN28; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: UFQFPN28
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit D/A converters: 2
Family: STM32G0
Kind of core: 32-bit
Number of 16bit timers: 10
Number of 12bit A/D converters: 12
Number of 8bit timers: 3
Number of 32bit timers: 1
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| STM32G081KBT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP32; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 30
Case: LQFP32
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 13
Number of 12bit D/A converters: 2
Number of 16bit timers: 10
Number of 8bit timers: 3
Number of 32bit timers: 1
Family: STM32G0
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP32; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 30
Case: LQFP32
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 13
Number of 12bit D/A converters: 2
Number of 16bit timers: 10
Number of 8bit timers: 3
Number of 32bit timers: 1
Family: STM32G0
Kind of core: 32-bit
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| STM32G0B1RET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; Cmp: 3
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: CAN-FD; GPIO; HDMI CEC; I2C; I2S; IrDA; LIN; SPI; SWD; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM; watchdog
Memory: 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 32bit timers: 1
Family: STM32G0
Kind of core: 32-bit
Number of comparators: 3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; Cmp: 3
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 60
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: CAN-FD; GPIO; HDMI CEC; I2C; I2S; IrDA; LIN; SPI; SWD; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM; watchdog
Memory: 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 32bit timers: 1
Family: STM32G0
Kind of core: 32-bit
Number of comparators: 3
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| STM32G0B1RET6N |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 58
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: CAN-FD x2; HDMI CEC; I2C x3; LPUART; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; watchdog
Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 1
Family: STM32G0
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 58
Case: LQFP64
Supply voltage: 1.7...3.6V DC
Interface: CAN-FD x2; HDMI CEC; I2C x3; LPUART; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; watchdog
Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 1
Family: STM32G0
Kind of package: in-tray
Kind of core: 32-bit
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| STH240N10F7-2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: D2PAK; TO263AB
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: D2PAK; TO263AB
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhancement
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| LD3985M28R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD3985
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2.5...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD3985
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2.5...6V
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| BZW50-27RL |
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на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 70.26 грн |
| STM32G070RBT6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 59
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: I2C x2; SPI x2; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 8
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 59
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: I2C x2; SPI x2; USART x4
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 32kB SRAM; 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 8
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
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| STL20N6F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 12A; 78W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 78W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: STripFET™ F7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 60V; 12A; 78W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 78W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: STripFET™ F7
на замовлення 2164 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 91.61 грн |
| 10+ | 62.68 грн |
| 50+ | 47.98 грн |
| 100+ | 44.18 грн |
| STL260N4F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2993 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 137.92 грн |
| 10+ | 118.10 грн |
| 100+ | 91.67 грн |
| 250+ | 84.24 грн |
| 500+ | 79.28 грн |
| 1000+ | 76.81 грн |
| STL260N4LF7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STL22N65M5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 15A; Idm: 60A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 110W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 15A; Idm: 60A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 110W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STL210N4LF7AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| STL21N65M5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STL220N4F8 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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| STL225N6F7AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| STL26N60DM6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 60A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 110W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 60A; 110W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 110W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STL26N65DM2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 53A; 140W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 53A
Power dissipation: 140W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 206mΩ
Mounting: SMD
Gate charge: 35.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 53A; 140W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 53A
Power dissipation: 140W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 206mΩ
Mounting: SMD
Gate charge: 35.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STL285N4F7AG |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 188W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STL2N80K5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.5A; Idm: 6A; 33W
Case: PowerFLAT 5x6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 5nC
On-state resistance: 4.5Ω
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 33W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.5A; Idm: 6A; 33W
Case: PowerFLAT 5x6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 5nC
On-state resistance: 4.5Ω
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 33W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
товару немає в наявності
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| TL064CD |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 6÷36VDC; SO14; tube
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 6...36V DC
Case: SO14
Operating temperature: 0...70°C
Slew rate: 3.5V/μs
Integrated circuit features: low power
Kind of package: tube
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 6÷36VDC; SO14; tube
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 6...36V DC
Case: SO14
Operating temperature: 0...70°C
Slew rate: 3.5V/μs
Integrated circuit features: low power
Kind of package: tube
на замовлення 132 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.68 грн |
| 21+ | 19.99 грн |
| 23+ | 18.58 грн |
| 25+ | 16.77 грн |
| 50+ | 15.86 грн |
| 100+ | 15.11 грн |
| STW9NK90Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 151 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 205.45 грн |
| 30+ | 131.32 грн |




















