Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (161826) > Сторінка 2681 з 2698
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STW26N65DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 12.6A; Idm: 53A; 170W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.6A Power dissipation: 170W Case: TO247 Gate-source voltage: ±25V On-state resistance: 156mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 35.5nC Pulsed drain current: 53A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STB6N60M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STD6N60DM2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 60W Case: DPAK; TO252 On-state resistance: 1.1Ω Mounting: SMD Gate charge: 6.2nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
SM6T24CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 24V; 18A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 18A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
L6470PD | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; motor controller; PowerSO36; 3A; 8÷45V Type of integrated circuit: driver Kind of integrated circuit: motor controller Case: PowerSO36 Output current: 3A Mounting: SMD On-state resistance: 510mΩ Operating temperature: -40...150°C Application: universal Kind of package: tube Supply voltage: 8...45V |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
STM32F765IGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 216MHz Mounting: SMD Number of inputs/outputs: 140 Case: LQFP176 Supply voltage: 1.7...3.6V DC Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG Kind of architecture: Cortex M7 Integrated circuit features: TRNG Memory: 512kB SRAM; 1MB FLASH Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Family: STM32F7 Kind of core: 32-bit Number of 32bit timers: 2 Number of 16bit timers: 12 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
STM32F765VGT7 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 216MHz; LQFP100; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 216MHz Mounting: SMD Number of inputs/outputs: 82 Case: LQFP100 Supply voltage: 1.7...3.6V DC Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG Kind of architecture: Cortex M7 Integrated circuit features: TRNG Memory: 512kB SRAM; 1MB FLASH Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 Family: STM32F7 Kind of core: 32-bit Number of 32bit timers: 2 Number of 16bit timers: 12 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
STM32F769BGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 216MHz; LQFP208; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 216MHz Mounting: SMD Number of inputs/outputs: 168 Case: LQFP208 Supply voltage: 1.7...3.6V DC Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG Kind of architecture: Cortex M7 Integrated circuit features: TRNG Memory: 512kB SRAM; 1MB FLASH Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Family: STM32F7 Kind of core: 32-bit Number of 32bit timers: 2 Number of 16bit timers: 12 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
STP4N150 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO220-3 Type of transistor: N-MOSFET Technology: PowerMesh™ Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 2.5A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| VN9D5D20FNTR | STMicroelectronics |
Category: Integrated circuits - Unclassified Description: VN9D5D20FNTR |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
|
STM32F439BGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 180MHz; LQFP208; 1.8÷3.6VDC Interface: CAN x2; I2C x3; I2S x2; SAI; SDIO; SPI x6; USART x4; USB OTG Kind of architecture: Cortex M4 Type of integrated circuit: STM32 ARM microcontroller Family: STM32F4 Supply voltage: 1.8...3.6V DC Number of inputs/outputs: 168 Memory: 256kB SRAM; 1MB FLASH Kind of core: 32-bit Clock frequency: 180MHz Case: LQFP208 Mounting: SMD |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| STM32F427ZIT7 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG Kind of architecture: Cortex M4 Type of integrated circuit: STM32 ARM microcontroller Family: STM32F4 Operating temperature: -40...105°C Number of 12bit D/A converters: 2 Supply voltage: 1.8...3.6V DC Number of 16bit timers: 14 Number of 12bit A/D converters: 24 Number of inputs/outputs: 114 Memory: 256kB SRAM; 2MB FLASH Kind of core: 32-bit Clock frequency: 180MHz Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Kind of package: in-tray Case: LQFP144 Mounting: SMD |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
|
STTH6010W | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 60A; tube; Ifsm: 400A; DO247; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 0.4kA Case: DO247 Max. forward voltage: 1.3V Reverse recovery time: 49ns |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| LD39030ADTPU18R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; DFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.33V Output voltage: 1.8V Output current: 0.3A Case: DFN4 Mounting: SMD Manufacturer series: LD39030 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 0.5...1.5% Number of channels: 1 Input voltage: 1.5...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
BUL38D | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 450V; 5A; 80W; TO220AB; 1.23÷1.32mm Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 450V Collector current: 5A Power dissipation: 80W Case: TO220AB Mounting: THT Kind of package: tube Heatsink thickness: 1.23...1.32mm |
на замовлення 149 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SMAJ85CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 85V Breakdown voltage: 99V Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ Max. forward impulse current: 13A |
на замовлення 1030 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SMAJ154A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 154V Breakdown voltage: 171V Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ Max. forward impulse current: 7A |
на замовлення 4492 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SMAJ33A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 36.7V; 33A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 33A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 7002 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SMAJ10CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 11.1V; 106A; bidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 106A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Kind of package: reel; tape |
на замовлення 2129 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SMAJ70CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 81.9V; 16A; bidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 70V Breakdown voltage: 81.9V Max. forward impulse current: 16A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 3615 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SMAJ70A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 81.9V; 16A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 70V Breakdown voltage: 81.9V Max. forward impulse current: 16A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 5682 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| EVAL-L9963E-MCU | STMicroelectronics |
Category: Development kits - UnclassifiedDescription: EVAL-L9963E-MCU |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
| A1C15S12M3 | STMicroelectronics |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Electrical mounting: Press-in PCB Mechanical mounting: screw Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 30A Power dissipation: 142.8W Max. off-state voltage: 1.2kV Case: ACEPACK™1 Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Type of semiconductor module: IGBT Application: Inverter; motors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32G0B0CET6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 43 Case: LQFP48 Supply voltage: 2...3.6V DC Interface: I2C x3; SPI x3; USART x6; USB Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 19 Number of 16bit timers: 9 Family: STM32G0 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32G0B0RET6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 59 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: I2C x3; SPI x3; USART x6; USB Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 19 Number of 16bit timers: 9 Family: STM32G0 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
SM6T33CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2336 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SM6T33CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
на замовлення 22411 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SCTW90N65G2V | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 90A; Idm: 220A; 565W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 90A Pulsed drain current: 220A Power dissipation: 565W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 30mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SCTH90N65G2V-7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 116A; Idm: 220A; 484W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 116A Pulsed drain current: 220A Power dissipation: 484W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 27mΩ Mounting: SMD Gate charge: 157nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCTL90N65G2V | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 160A; 935W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 160A Power dissipation: 935W Case: PowerFLAT 8x8 Gate-source voltage: -10...22V On-state resistance: 24mΩ Mounting: SMD Gate charge: 157nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCTWA90N65G2V | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 119A Pulsed drain current: 220A Power dissipation: 565W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 24mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCTWA90N65G2V-4 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 119A Pulsed drain current: 220A Power dissipation: 565W Case: HIP247-4 Gate-source voltage: -10...22V On-state resistance: 24mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STB12NM50T4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 550V; 12A; 160W; D2PAK,TO263 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 550V Drain current: 12A Power dissipation: 160W Case: D2PAK; TO263 On-state resistance: 0.35Ω Mounting: SMD Kind of channel: enhancement Gate charge: 28nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
STP46NF30 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 300V; 27A; Idm: 168A Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Case: TO220-3 Technology: STripFET™ II Gate charge: 90nC On-state resistance: 75mΩ Power dissipation: 300W Gate-source voltage: ±20V Drain current: 27A Pulsed drain current: 168A Drain-source voltage: 300V Polarisation: unipolar Kind of channel: enhancement |
на замовлення 248 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SM6T36A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 314 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SM6T36AY | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
STD17NF03LT4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Power dissipation: 30W Case: DPAK Gate-source voltage: ±16V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 3034 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
VNB35N07TR-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 25A; Ch: 1; SMD; D2PAK Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 25A Number of channels: 1 Mounting: SMD Case: D2PAK On-state resistance: 28mΩ Output voltage: 55V |
на замовлення 1570 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
STPS5L60U | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.48V Max. forward impulse current: 90A Kind of package: reel; tape |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| STPS5L60UFN | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB flat; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMB flat Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.52V Max. load current: 15A Leakage current: 100mA Max. forward impulse current: 205A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| Z0107MA 2AL2 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A Type of thyristor: triac Mounting: THT Case: TO92 Gate current: 5mA Max. load current: 1A Max. forward impulse current: 8A Max. off-state voltage: 0.6kV Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| Z0107SN 5AA4 | STMicroelectronics |
Category: TriacsDescription: Triac Type of thyristor: triac |
на замовлення 11000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
|
M95080-WMN6P | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; SO8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: SO8 Kind of interface: serial |
на замовлення 1122 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
M95080-DFMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 20MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
на замовлення 2483 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| M95080-RMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| M95080-DFDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| M95080-DFMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 20MHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| M95080-RDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
M95080-RMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| M95080-WDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 2.5÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 2.5...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
M95080-WMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 20MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1kx8bit Operating voltage: 2.5...5.5V Clock frequency: 20MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
STPS5L40 | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.5V Max. load current: 15A Max. forward impulse current: 150A Leakage current: 75mA Kind of package: Ammo Pack |
на замовлення 1130 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
STPS3150RL | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.82V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.82V Max. forward impulse current: 100A Kind of package: reel |
на замовлення 1496 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
PKC-136 | STMicroelectronics |
Category: Diodes - othersDescription: Diode: TVS+FRD; 700V; DO15; Ammo Pack; 10uA; Ubr: 160V Type of diode: TVS+FRD Max. off-state voltage: 700V Case: DO15 Mounting: THT Features of semiconductor devices: snubber diode; ultrafast switching Kind of package: Ammo Pack Leakage current: 10µA Breakdown voltage: 160V |
на замовлення 351 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| L6981N50DR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC Type of integrated circuit: PMIC |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
| LSM303AHTR | STMicroelectronics |
Category: Resistive Magnetic SensorsDescription: Sensor: accelerometer; Interface: SPI; -40÷85°C Type of sensor: accelerometer Interface: SPI Operating temperature: -40...85°C |
на замовлення 24000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
|
Z0405MH | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: IPAK Gate current: 5mA Max. forward impulse current: 16A Mounting: THT Kind of package: tube |
на замовлення 129 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
STY60NK30Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 37.5A; 450W; MAX247; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 37.5A Power dissipation: 450W Case: MAX247 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
BDX53B | STMicroelectronics |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 8A; 60W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 60W Case: TO220AB Mounting: THT Kind of package: tube Current gain: 750 |
на замовлення 391 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
M24C01-RMN6P | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1kbEEPROM; I2C; 128x8bit; 1.8÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1kb EEPROM Interface: I2C Memory organisation: 128x8bit Operating voltage: 1.8...5.5V Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C Clock frequency: 400kHz |
товару немає в наявності |
В кошику од. на суму грн. |
| STW26N65DM2 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.6A; Idm: 53A; 170W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.6A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 156mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35.5nC
Pulsed drain current: 53A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.6A; Idm: 53A; 170W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.6A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 156mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35.5nC
Pulsed drain current: 53A
товару немає в наявності
В кошику
од. на суму грн.
| STB6N60M2 |
![]() |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| STD6N60DM2 |
![]() |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 60W
Case: DPAK; TO252
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 60W
Case: DPAK; TO252
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SM6T24CAY |
![]() |
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| L6470PD |
![]() |
Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; motor controller; PowerSO36; 3A; 8÷45V
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: PowerSO36
Output current: 3A
Mounting: SMD
On-state resistance: 510mΩ
Operating temperature: -40...150°C
Application: universal
Kind of package: tube
Supply voltage: 8...45V
Category: Motor and PWM drivers
Description: IC: driver; motor controller; PowerSO36; 3A; 8÷45V
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: PowerSO36
Output current: 3A
Mounting: SMD
On-state resistance: 510mΩ
Operating temperature: -40...150°C
Application: universal
Kind of package: tube
Supply voltage: 8...45V
на замовлення 93 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1432.84 грн |
| 10+ | 1055.48 грн |
| 31+ | 1018.31 грн |
| 62+ | 973.72 грн |
| STM32F765IGT6 |
![]() |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 140
Case: LQFP176
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 140
Case: LQFP176
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
товару немає в наявності
В кошику
од. на суму грн.
| STM32F765VGT7 |
![]() |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP100; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 82
Case: LQFP100
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP100; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 82
Case: LQFP100
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
товару немає в наявності
В кошику
од. на суму грн.
| STM32F769BGT6 |
![]() |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP208; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP208; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F7
Kind of core: 32-bit
Number of 32bit timers: 2
Number of 16bit timers: 12
товару немає в наявності
В кошику
од. на суму грн.
| STP4N150 | ![]() |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 108 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 655.50 грн |
| 3+ | 562.43 грн |
| 10+ | 471.58 грн |
| 50+ | 426.98 грн |
| VN9D5D20FNTR |
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 218.80 грн |
| STM32F439BGT6 |
![]() |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP208; 1.8÷3.6VDC
Interface: CAN x2; I2C x3; I2S x2; SAI; SDIO; SPI x6; USART x4; USB OTG
Kind of architecture: Cortex M4
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F4
Supply voltage: 1.8...3.6V DC
Number of inputs/outputs: 168
Memory: 256kB SRAM; 1MB FLASH
Kind of core: 32-bit
Clock frequency: 180MHz
Case: LQFP208
Mounting: SMD
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP208; 1.8÷3.6VDC
Interface: CAN x2; I2C x3; I2S x2; SAI; SDIO; SPI x6; USART x4; USB OTG
Kind of architecture: Cortex M4
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F4
Supply voltage: 1.8...3.6V DC
Number of inputs/outputs: 168
Memory: 256kB SRAM; 1MB FLASH
Kind of core: 32-bit
Clock frequency: 180MHz
Case: LQFP208
Mounting: SMD
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1000.59 грн |
| 3+ | 854.79 грн |
| 10+ | 743.29 грн |
| STM32F427ZIT7 |
![]() |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F4
Operating temperature: -40...105°C
Number of 12bit D/A converters: 2
Supply voltage: 1.8...3.6V DC
Number of 16bit timers: 14
Number of 12bit A/D converters: 24
Number of inputs/outputs: 114
Memory: 256kB SRAM; 2MB FLASH
Kind of core: 32-bit
Clock frequency: 180MHz
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: in-tray
Case: LQFP144
Mounting: SMD
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Type of integrated circuit: STM32 ARM microcontroller
Family: STM32F4
Operating temperature: -40...105°C
Number of 12bit D/A converters: 2
Supply voltage: 1.8...3.6V DC
Number of 16bit timers: 14
Number of 12bit A/D converters: 24
Number of inputs/outputs: 114
Memory: 256kB SRAM; 2MB FLASH
Kind of core: 32-bit
Clock frequency: 180MHz
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: in-tray
Case: LQFP144
Mounting: SMD
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 992.58 грн |
| 3+ | 884.52 грн |
| 10+ | 847.36 грн |
| 25+ | 795.32 грн |
| STTH6010W |
![]() |
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; tube; Ifsm: 400A; DO247; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: DO247
Max. forward voltage: 1.3V
Reverse recovery time: 49ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 60A; tube; Ifsm: 400A; DO247; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: DO247
Max. forward voltage: 1.3V
Reverse recovery time: 49ns
на замовлення 12 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 272.54 грн |
| 4+ | 247.76 грн |
| LD39030ADTPU18R |
![]() |
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; DFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.33V
Output voltage: 1.8V
Output current: 0.3A
Case: DFN4
Mounting: SMD
Manufacturer series: LD39030
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 0.5...1.5%
Number of channels: 1
Input voltage: 1.5...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; DFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.33V
Output voltage: 1.8V
Output current: 0.3A
Case: DFN4
Mounting: SMD
Manufacturer series: LD39030
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 0.5...1.5%
Number of channels: 1
Input voltage: 1.5...5.5V
товару немає в наявності
В кошику
од. на суму грн.
| BUL38D |
![]() |
Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 80W; TO220AB; 1.23÷1.32mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 80W; TO220AB; 1.23÷1.32mm
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
на замовлення 149 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.73 грн |
| 10+ | 66.65 грн |
| 50+ | 51.20 грн |
| 100+ | 46.17 грн |
| SMAJ85CA-TR |
![]() |
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 99V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Max. forward impulse current: 13A
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 99V
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Max. forward impulse current: 13A
на замовлення 1030 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.68 грн |
| 21+ | 19.74 грн |
| 100+ | 14.87 грн |
| 500+ | 11.48 грн |
| 1000+ | 10.08 грн |
| SMAJ154A-TR |
![]() |
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 154V
Breakdown voltage: 171V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Max. forward impulse current: 7A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 154V
Breakdown voltage: 171V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Max. forward impulse current: 7A
на замовлення 4492 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.80 грн |
| 16+ | 26.59 грн |
| 18+ | 23.70 грн |
| 100+ | 15.69 грн |
| 250+ | 13.38 грн |
| 500+ | 11.98 грн |
| 1000+ | 10.90 грн |
| SMAJ33A-TR |
![]() |
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7V; 33A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7V; 33A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 7002 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.79 грн |
| 25+ | 16.85 грн |
| 50+ | 12.39 грн |
| 100+ | 10.98 грн |
| 250+ | 9.33 грн |
| 500+ | 8.26 грн |
| 1000+ | 7.43 грн |
| 3000+ | 6.36 грн |
| 5000+ | 5.95 грн |
| SMAJ10CA-TR |
![]() |
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 11.1V; 106A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 106A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 11.1V; 106A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 106A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Kind of package: reel; tape
на замовлення 2129 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.12 грн |
| 24+ | 17.51 грн |
| 28+ | 15.20 грн |
| 50+ | 10.57 грн |
| 100+ | 9.17 грн |
| 250+ | 7.76 грн |
| 500+ | 7.10 грн |
| 1000+ | 6.52 грн |
| SMAJ70CA-TR |
![]() |
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 81.9V; 16A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 81.9V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 81.9V; 16A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 81.9V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 3615 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.34 грн |
| 87+ | 4.77 грн |
| 100+ | 4.56 грн |
| 500+ | 4.35 грн |
| 1000+ | 4.15 грн |
| 2000+ | 3.91 грн |
| SMAJ70A-TR |
![]() |
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 81.9V; 16A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 81.9V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 81.9V; 16A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 70V
Breakdown voltage: 81.9V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 5682 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.46 грн |
| 28+ | 15.20 грн |
| 32+ | 13.13 грн |
| 100+ | 9.00 грн |
| 5000+ | 7.68 грн |
| EVAL-L9963E-MCU |
![]() |
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 27867.05 грн |
| A1C15S12M3 |
![]() |
Виробник: STMicroelectronics
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 142.8W
Max. off-state voltage: 1.2kV
Case: ACEPACK™1
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: Inverter; motors
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Power dissipation: 142.8W
Max. off-state voltage: 1.2kV
Case: ACEPACK™1
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: Inverter; motors
товару немає в наявності
В кошику
од. на суму грн.
| STM32G0B0CET6TR |
![]() |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 43
Case: LQFP48
Supply voltage: 2...3.6V DC
Interface: I2C x3; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 9
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 43
Case: LQFP48
Supply voltage: 2...3.6V DC
Interface: I2C x3; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 9
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| STM32G0B0RET6TR |
![]() |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 59
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: I2C x3; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 9
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 59
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: I2C x3; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 9
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| SM6T33CA |
![]() |
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2336 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.24 грн |
| 19+ | 22.79 грн |
| 21+ | 20.32 грн |
| 50+ | 15.36 грн |
| 100+ | 13.54 грн |
| 250+ | 11.40 грн |
| 500+ | 9.83 грн |
| 1000+ | 8.51 грн |
| SM6T33CAY |
![]() |
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 22411 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.68 грн |
| 43+ | 9.75 грн |
| 100+ | 8.75 грн |
| 250+ | 8.09 грн |
| 500+ | 7.68 грн |
| 1000+ | 7.52 грн |
| SCTW90N65G2V |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 90A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 90A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SCTH90N65G2V-7 |
![]() |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 116A; Idm: 220A; 484W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 116A
Pulsed drain current: 220A
Power dissipation: 484W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 116A; Idm: 220A; 484W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 116A
Pulsed drain current: 220A
Power dissipation: 484W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику
од. на суму грн.
| SCTL90N65G2V |
![]() |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 160A; 935W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 935W
Case: PowerFLAT 8x8
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 160A; 935W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 935W
Case: PowerFLAT 8x8
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SCTWA90N65G2V |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 119A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 119A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SCTWA90N65G2V-4 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 119A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 119A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику
од. на суму грн.
| STB12NM50T4 |
![]() |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 12A; 160W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 12A
Power dissipation: 160W
Case: D2PAK; TO263
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 12A; 160W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 12A
Power dissipation: 160W
Case: D2PAK; TO263
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
товару немає в наявності
В кошику
од. на суму грн.
| STP46NF30 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 300V; 27A; Idm: 168A
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Case: TO220-3
Technology: STripFET™ II
Gate charge: 90nC
On-state resistance: 75mΩ
Power dissipation: 300W
Gate-source voltage: ±20V
Drain current: 27A
Pulsed drain current: 168A
Drain-source voltage: 300V
Polarisation: unipolar
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 300V; 27A; Idm: 168A
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Case: TO220-3
Technology: STripFET™ II
Gate charge: 90nC
On-state resistance: 75mΩ
Power dissipation: 300W
Gate-source voltage: ±20V
Drain current: 27A
Pulsed drain current: 168A
Drain-source voltage: 300V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 248 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 265.04 грн |
| 10+ | 144.53 грн |
| 50+ | 124.71 грн |
| SM6T36A |
![]() |
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 314 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.90 грн |
| 30+ | 13.79 грн |
| 33+ | 12.88 грн |
| 50+ | 12.06 грн |
| 100+ | 11.23 грн |
| 250+ | 10.32 грн |
| SM6T36AY |
![]() |
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| STD17NF03LT4 |
![]() |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 3034 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.36 грн |
| 13+ | 32.13 грн |
| 50+ | 25.35 грн |
| 100+ | 22.96 грн |
| 500+ | 18.50 грн |
| 1000+ | 16.85 грн |
| 2500+ | 15.61 грн |
| VNB35N07TR-E |
![]() |
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 25A; Ch: 1; SMD; D2PAK
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 25A
Number of channels: 1
Mounting: SMD
Case: D2PAK
On-state resistance: 28mΩ
Output voltage: 55V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 25A; Ch: 1; SMD; D2PAK
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 25A
Number of channels: 1
Mounting: SMD
Case: D2PAK
On-state resistance: 28mΩ
Output voltage: 55V
на замовлення 1570 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 377.11 грн |
| 5+ | 286.58 грн |
| 10+ | 251.89 грн |
| 25+ | 210.60 грн |
| 100+ | 189.95 грн |
| STPS5L60U |
![]() |
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 90A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 90A
Kind of package: reel; tape
на замовлення 108 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.58 грн |
| 13+ | 32.21 грн |
| 15+ | 28.74 грн |
| 20+ | 25.68 грн |
| 100+ | 19.41 грн |
| STPS5L60UFN |
![]() |
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 205A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 205A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| Z0107MA 2AL2 |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Mounting: THT
Case: TO92
Gate current: 5mA
Max. load current: 1A
Max. forward impulse current: 8A
Max. off-state voltage: 0.6kV
Kind of package: Ammo Pack
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Mounting: THT
Case: TO92
Gate current: 5mA
Max. load current: 1A
Max. forward impulse current: 8A
Max. off-state voltage: 0.6kV
Kind of package: Ammo Pack
товару немає в наявності
В кошику
од. на суму грн.
| Z0107SN 5AA4 |
![]() |
на замовлення 11000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6000+ | 6.05 грн |
| M95080-WMN6P |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
на замовлення 1122 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.35 грн |
| 100+ | 17.10 грн |
| 300+ | 16.02 грн |
| 500+ | 15.61 грн |
| 1000+ | 15.03 грн |
| M95080-DFMN6TP |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
на замовлення 2483 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.47 грн |
| 14+ | 29.57 грн |
| 25+ | 27.50 грн |
| 100+ | 24.03 грн |
| 250+ | 20.89 грн |
| 1000+ | 19.66 грн |
| M95080-RMC6TG |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M95080-DFDW6TP |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M95080-DFMC6TG |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M95080-RDW6TP |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M95080-RMN6TP |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M95080-WDW6TP |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 2.5÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 2.5÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M95080-WMN6TP |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| STPS5L40 |
![]() |
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Leakage current: 75mA
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Leakage current: 75mA
Kind of package: Ammo Pack
на замовлення 1130 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.45 грн |
| 44+ | 9.50 грн |
| 100+ | 7.19 грн |
| STPS3150RL |
![]() |
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.82V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
Kind of package: reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.82V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
Kind of package: reel
на замовлення 1496 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.57 грн |
| 22+ | 19.49 грн |
| 100+ | 13.79 грн |
| 500+ | 10.90 грн |
| 625+ | 10.57 грн |
| 1000+ | 9.91 грн |
| PKC-136 |
![]() |
Виробник: STMicroelectronics
Category: Diodes - others
Description: Diode: TVS+FRD; 700V; DO15; Ammo Pack; 10uA; Ubr: 160V
Type of diode: TVS+FRD
Max. off-state voltage: 700V
Case: DO15
Mounting: THT
Features of semiconductor devices: snubber diode; ultrafast switching
Kind of package: Ammo Pack
Leakage current: 10µA
Breakdown voltage: 160V
Category: Diodes - others
Description: Diode: TVS+FRD; 700V; DO15; Ammo Pack; 10uA; Ubr: 160V
Type of diode: TVS+FRD
Max. off-state voltage: 700V
Case: DO15
Mounting: THT
Features of semiconductor devices: snubber diode; ultrafast switching
Kind of package: Ammo Pack
Leakage current: 10µA
Breakdown voltage: 160V
на замовлення 351 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 72.93 грн |
| 10+ | 45.51 грн |
| 100+ | 32.29 грн |
| 250+ | 31.30 грн |
| L6981N50DR |
![]() |
Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 102.28 грн |
| LSM303AHTR |
![]() |
Виробник: STMicroelectronics
Category: Resistive Magnetic Sensors
Description: Sensor: accelerometer; Interface: SPI; -40÷85°C
Type of sensor: accelerometer
Interface: SPI
Operating temperature: -40...85°C
Category: Resistive Magnetic Sensors
Description: Sensor: accelerometer; Interface: SPI; -40÷85°C
Type of sensor: accelerometer
Interface: SPI
Operating temperature: -40...85°C
на замовлення 24000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 247.26 грн |
| Z0405MH |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 16A
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 16A
Mounting: THT
Kind of package: tube
на замовлення 129 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.02 грн |
| 14+ | 29.57 грн |
| 75+ | 23.95 грн |
| STY60NK30Z |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 37.5A; 450W; MAX247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 37.5A
Power dissipation: 450W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 37.5A; 450W; MAX247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 37.5A
Power dissipation: 450W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 895.64 грн |
| BDX53B |
![]() |
Виробник: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 60W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
Current gain: 750
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 60W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
Current gain: 750
на замовлення 391 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.05 грн |
| 10+ | 49.14 грн |
| 50+ | 35.76 грн |
| 100+ | 31.47 грн |
| 250+ | 26.92 грн |
| M24C01-RMN6P |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; I2C; 128x8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: I2C
Memory organisation: 128x8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Clock frequency: 400kHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; I2C; 128x8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: I2C
Memory organisation: 128x8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Clock frequency: 400kHz
товару немає в наявності
В кошику
од. на суму грн.





















