Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (165586) > Сторінка 2726 з 2760
| Фото | Назва | Виробник | Інформація |
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| STM32H755BIT3 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 480MHz Mounting: SMD Number of inputs/outputs: 148 Case: LQFP208 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...125°C Family: STM32H7 Kind of core: 32-bit Number of comparators: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32H755IIK3 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 119/128 Case: UFBGA176 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...125°C Family: STM32H7 Kind of core: 32-bit Number of comparators: 2 Clock frequency: 480MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32H755IIK6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 119/128 Case: UFBGA176 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M4; Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...85°C Family: STM32H7 Kind of core: 32-bit Number of comparators: 2 Clock frequency: 480MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32H755XIH3 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 168 Case: TFBGA240 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...125°C Family: STM32H7 Kind of core: 32-bit Number of comparators: 2 Clock frequency: 480MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32H755XIH6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Number of inputs/outputs: 168 Case: TFBGA240 Supply voltage: 1.62...3.6V DC Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M4; Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog Memory: 1MB SRAM; 2MB FLASH Operating temperature: -40...85°C Family: STM32H7 Kind of core: 32-bit Number of comparators: 2 Clock frequency: 480MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TL432IL3T | STMicroelectronics |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±2%; SOT23-3; reel,tape Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2% Mounting: SMD Case: SOT23-3 Operating temperature: -40...105°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STH13N120K5-2AG | STMicroelectronics |
Category: Transistors - UnclassifiedDescription: STH13N120K5-2AG |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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SM15T36CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; SMC; reel,tape Mounting: SMD Case: SMC Semiconductor structure: bidirectional Type of diode: TVS Leakage current: 1µA Max. forward impulse current: 30A Max. off-state voltage: 30.8V Breakdown voltage: 36V Peak pulse power dissipation: 1.5kW Kind of package: reel; tape |
на замовлення 16127 шт: термін постачання 21-30 дні (днів) |
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SM15T39CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 39V; 28A; bidirectional; SMC; reel,tape Type of diode: TVS Kind of package: reel; tape Mounting: SMD Leakage current: 1µA Max. forward impulse current: 28A Max. off-state voltage: 33.3V Breakdown voltage: 39V Semiconductor structure: bidirectional Peak pulse power dissipation: 1.5kW Case: SMC |
на замовлення 352 шт: термін постачання 21-30 дні (днів) |
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SM15T39A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 28A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2390 шт: термін постачання 21-30 дні (днів) |
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SM15T68CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 68V; 16.3A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 16.3A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2166 шт: термін постачання 21-30 дні (днів) |
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SM15T36A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 36V; 30A; unidirectional; SMC; reel,tape Mounting: SMD Case: SMC Semiconductor structure: unidirectional Type of diode: TVS Leakage current: 1µA Max. forward impulse current: 30A Max. off-state voltage: 30.8V Breakdown voltage: 36V Peak pulse power dissipation: 1.5kW Kind of package: reel; tape |
на замовлення 704 шт: термін постачання 21-30 дні (днів) |
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SM15T15A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 15V; 71A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 71A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1184 шт: термін постачання 21-30 дні (днів) |
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SM15T22CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 22V; 4.6A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18.8V Breakdown voltage: 22V Max. forward impulse current: 4.6A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 3707 шт: термін постачання 21-30 дні (днів) |
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SM15T68A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 68V; 16.3A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 16.3A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 294 шт: термін постачання 21-30 дні (днів) |
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SM15T220A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 220V; 4.6A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 188V Breakdown voltage: 220V Max. forward impulse current: 4.6A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1211 шт: термін постачання 21-30 дні (днів) |
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SM15T200A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 200V; 5.5A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 5.5A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1174 шт: термін постачання 21-30 дні (днів) |
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SM15T150CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 150V; 7.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 7.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1179 шт: термін постачання 21-30 дні (днів) |
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SM15T56CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 56V; 14.3A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 47.6V Breakdown voltage: 56V Max. forward impulse current: 14.3A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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SM15T27A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 27V; 40A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 23.1V Breakdown voltage: 27V Max. forward impulse current: 40A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SM15T12CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 12V; 90A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 90A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SM15T200CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 200V; 5.5A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 5.5A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SM15T220CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 220V; 4.6A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 188V Breakdown voltage: 220V Max. forward impulse current: 4.6A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SM15T22A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18.8V Breakdown voltage: 22V Max. forward impulse current: 49A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SM15T24A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 24V; 45A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 45A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SM15T24CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 24V; 45A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 45A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LM2904AWYPT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; TSSOP8; 3÷30VDC; IB: 0.2uA Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Mounting: SMT Number of channels: 2 Case: TSSOP8 Slew rate: 0.6V/μs Operating temperature: -40...125°C Input offset voltage: 4mV Voltage supply range: 3...30V DC Integrated circuit features: low power Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| LM2904AHYQ6T | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier Type of integrated circuit: operational amplifier |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| STM32H725RGV3 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 550MHz; VFQFPN68; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 550MHz Mounting: SMD Number of inputs/outputs: 46 Case: VFQFPN68 Supply voltage: 1.71...3.6V DC Interface: CAN FD; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog Memory: 564kB SRAM; 1MB FLASH Operating temperature: -40...125°C Number of 12bit A/D converters: 1 Number of comparators: 2 Family: STM32H7 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32H725RGV6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 550MHz; VFQFPN68; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 550MHz Mounting: SMD Number of inputs/outputs: 46 Case: VFQFPN68 Supply voltage: 1.71...3.6V DC Interface: CAN FD; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog Memory: 564kB SRAM; 1MB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of comparators: 2 Family: STM32H7 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STTH1L06 | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; Ir: 75uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 80ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DO41 Max. forward voltage: 1.3V Max. forward impulse current: 30A Leakage current: 75µA Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STTH1L06U | STMicroelectronics |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 80ns; SMB; Ufmax: 1.05V; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 80ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 1.05V Max. forward impulse current: 20A Kind of package: reel; tape Max. load current: 7A |
на замовлення 80 шт: термін постачання 21-30 дні (днів) |
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| STTH1L06RL | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; reel; Ifsm: 30A; DO41; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 80ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DO41 Max. forward voltage: 1.3V Max. forward impulse current: 30A Leakage current: 75µA Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STTH1L06UFY | STMicroelectronics |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 45ns; SMB flat; Ufmax: 1.4V; Ir: 1uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB flat Max. forward voltage: 1.4V Max. forward impulse current: 20A Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STB9NK90Z | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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PD55003L-E | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; RF; 40V; 2.5A; 14W; PowerFLAT; SMT Power dissipation: 14W Drain-source voltage: 40V Efficiency: 52% Frequency: 500MHz Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerFLAT Kind of package: reel; tape Kind of transistor: RF Electrical mounting: SMT Polarisation: unipolar Drain current: 2.5A Output power: 3W Open-loop gain: 19dB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| PD55025-E | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 7A; 79W; PowerSO10RF Power dissipation: 79W Gate-source voltage: ±20V Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerSO10RF Kind of package: tube Mounting: SMD Polarisation: unipolar Drain current: 7A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PD55025S-E | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; RF; 40V; 7A; 79W; PowerSO10RF; SMT Power dissipation: 79W Gate-source voltage: ±20V Drain-source voltage: 40V Efficiency: 50% Frequency: 500MHz Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerSO10RF Kind of package: tube Kind of transistor: RF Electrical mounting: SMT Polarisation: unipolar Drain current: 7A Output power: 25W Open-loop gain: 14.5dB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PD55003S-E | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 2.5A; 31.7W; PowerSO10RF Power dissipation: 31.7W Gate-source voltage: ±20V Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerSO10RF Kind of package: tube Mounting: SMD Polarisation: unipolar Drain current: 2.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PD55003TR-E | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 2.5A; 31.7W; PowerSO10RF Power dissipation: 31.7W Gate-source voltage: ±20V Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerSO10RF Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain current: 2.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PD55025TR-E | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 7A; 79W; PowerSO10RF Power dissipation: 79W Gate-source voltage: ±20V Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerSO10RF Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain current: 7A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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M95080-DFMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz; SO8 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Kind of interface: serial Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.7...5.5V Memory: 8kb EEPROM Case: SO8 Clock frequency: 20MHz Memory organisation: 1024x8bit |
на замовлення 2493 шт: термін постачання 21-30 дні (днів) |
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| HVLED001BTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; boost,buck,flyback,SEPIC; SSOP10; 18V; Ch: 1; PWM Type of integrated circuit: driver Topology: boost; buck; flyback; SEPIC Case: SSOP10 Output voltage: 18V Number of channels: 1 Integrated circuit features: PWM Mounting: SMD Operating temperature: -40...125°C Application: general purpose Input voltage: 18V |
на замовлення 19800 шт: термін постачання 21-30 дні (днів) |
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| STBC15LJTR | STMicroelectronics |
Category: Battery and battery cells controllersDescription: IC: PMIC Type of integrated circuit: PMIC |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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M95160-DFMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.7÷5.5V; 20MHz; SO8 Case: SO8 Kind of interface: serial Mounting: SMD Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.7...5.5V Memory: 16kb EEPROM Memory organisation: 2kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| M95160-DFDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.7÷5.5V; 20MHz Case: TSSOP8 Kind of interface: serial Mounting: SMD Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.7...5.5V Memory: 16kb EEPROM Memory organisation: 2kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| M95160-DFMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.7÷5.5V; 20MHz Case: UFDFPN8 Kind of interface: serial Mounting: SMD Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.7...5.5V Memory: 16kb EEPROM Memory organisation: 2kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| M95160-RDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.8÷5.5V; 20MHz Case: TSSOP8 Kind of interface: serial Mounting: SMD Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Memory: 16kb EEPROM Memory organisation: 2kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| M95160-RMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.8÷5.5V; 20MHz Case: UFDFPN8 Kind of interface: serial Mounting: SMD Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Memory: 16kb EEPROM Memory organisation: 2kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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M95160-RMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.8÷5.5V; 20MHz; SO8 Case: SO8 Kind of interface: serial Mounting: SMD Interface: SPI Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Memory: 16kb EEPROM Memory organisation: 2kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STD16NF06LT4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 17A; 40W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Power dissipation: 40W Case: DPAK Gate-source voltage: ±18V On-state resistance: 85mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 1016 шт: термін постачання 21-30 дні (днів) |
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STD15NF10T4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 16A; 70W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Power dissipation: 70W Case: DPAK Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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2STD1665T4 | STMicroelectronics |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 65V; 6A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Power dissipation: 15W Case: DPAK Mounting: SMD Kind of package: reel; tape Collector current: 6A Current gain: 30...350 Collector-emitter voltage: 65V |
на замовлення 1435 шт: термін постачання 21-30 дні (днів) |
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STD1NK80ZT4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1A; 45W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 16Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STD16NF06T4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 11A; 40W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STD130N6F7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 134W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 134W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 320A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
TYN1225RG | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 40mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 25A Load current: 16A Gate current: 40mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 0.3kA |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
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TS512IYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 3MHz; Ch: 2; SO8; 3÷30VDC; reel,tape Operating temperature: -40...125°C Case: SO8 Mounting: SMT Input offset current: 40nA Input offset voltage: 3.5mV Number of channels: 2 Slew rate: 1.5V/μs Voltage supply range: 3...30V DC Bandwidth: 3MHz Kind of package: reel; tape Application: automotive industry Integrated circuit features: precision Type of integrated circuit: operational amplifier |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TS512AIDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 3MHz; Ch: 2; SO8; 3÷30VDC; reel,tape Operating temperature: -40...125°C Case: SO8 Type of integrated circuit: operational amplifier Mounting: SMT Integrated circuit features: precision Input offset current: 40nA Input offset voltage: 1.5mV Slew rate: 1.5V/μs Number of channels: 2 Voltage supply range: 3...30V DC Bandwidth: 3MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TS512BIYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 3MHz; Ch: 2; SO8; 3÷30VDC; reel,tape Operating temperature: -40...125°C Case: SO8 Mounting: SMT Input offset current: 40nA Input offset voltage: 1.5mV Number of channels: 2 Slew rate: 1.5V/μs Voltage supply range: 3...30V DC Bandwidth: 3MHz Kind of package: reel; tape Application: automotive industry Integrated circuit features: precision Type of integrated circuit: operational amplifier |
товару немає в наявності |
В кошику од. на суму грн. |
| STM32H755BIT3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Kind of core: 32-bit
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; LQFP208; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 480MHz
Mounting: SMD
Number of inputs/outputs: 148
Case: LQFP208
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Kind of core: 32-bit
Number of comparators: 2
товару немає в наявності
В кошику
од. на суму грн.
| STM32H755IIK3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Kind of core: 32-bit
Number of comparators: 2
Clock frequency: 480MHz
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Kind of core: 32-bit
Number of comparators: 2
Clock frequency: 480MHz
товару немає в наявності
В кошику
од. на суму грн.
| STM32H755IIK6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Kind of core: 32-bit
Number of comparators: 2
Clock frequency: 480MHz
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; UFBGA176; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 119/128
Case: UFBGA176
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Kind of core: 32-bit
Number of comparators: 2
Clock frequency: 480MHz
товару немає в наявності
В кошику
од. на суму грн.
| STM32H755XIH3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Kind of core: 32-bit
Number of comparators: 2
Clock frequency: 480MHz
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...125°C
Family: STM32H7
Kind of core: 32-bit
Number of comparators: 2
Clock frequency: 480MHz
товару немає в наявності
В кошику
од. на суму грн.
| STM32H755XIH6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Kind of core: 32-bit
Number of comparators: 2
Clock frequency: 480MHz
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 480MHz; TFBGA240; 1.62÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Number of inputs/outputs: 168
Case: TFBGA240
Supply voltage: 1.62...3.6V DC
Interface: CAN FD; Ethernet; GPIO; I2C; I2S; LPUART; MDIO; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M4; Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; SMPS; watchdog
Memory: 1MB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Family: STM32H7
Kind of core: 32-bit
Number of comparators: 2
Clock frequency: 480MHz
товару немає в наявності
В кошику
од. на суму грн.
| TL432IL3T |
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Виробник: STMicroelectronics
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...105°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2%; SOT23-3; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2%
Mounting: SMD
Case: SOT23-3
Operating temperature: -40...105°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
товару немає в наявності
В кошику
од. на суму грн.
| STH13N120K5-2AG |
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на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 555.15 грн |
| SM15T36CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; SMC; reel,tape
Mounting: SMD
Case: SMC
Semiconductor structure: bidirectional
Type of diode: TVS
Leakage current: 1µA
Max. forward impulse current: 30A
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; SMC; reel,tape
Mounting: SMD
Case: SMC
Semiconductor structure: bidirectional
Type of diode: TVS
Leakage current: 1µA
Max. forward impulse current: 30A
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
на замовлення 16127 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.14 грн |
| 12+ | 32.95 грн |
| 50+ | 25.38 грн |
| 100+ | 22.62 грн |
| 250+ | 19.71 грн |
| 500+ | 17.89 грн |
| 1000+ | 16.39 грн |
| 2500+ | 14.98 грн |
| 5000+ | 14.66 грн |
| SM15T39CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 39V; 28A; bidirectional; SMC; reel,tape
Type of diode: TVS
Kind of package: reel; tape
Mounting: SMD
Leakage current: 1µA
Max. forward impulse current: 28A
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Semiconductor structure: bidirectional
Peak pulse power dissipation: 1.5kW
Case: SMC
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 39V; 28A; bidirectional; SMC; reel,tape
Type of diode: TVS
Kind of package: reel; tape
Mounting: SMD
Leakage current: 1µA
Max. forward impulse current: 28A
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Semiconductor structure: bidirectional
Peak pulse power dissipation: 1.5kW
Case: SMC
на замовлення 352 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.64 грн |
| 7+ | 61.01 грн |
| 10+ | 54.15 грн |
| 50+ | 40.75 грн |
| 52+ | 17.97 грн |
| 100+ | 17.89 грн |
| 143+ | 16.95 грн |
| SM15T39A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2390 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.99 грн |
| 12+ | 34.84 грн |
| 13+ | 31.92 грн |
| 50+ | 26.80 грн |
| 62+ | 14.98 грн |
| 171+ | 14.11 грн |
| SM15T68CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 68V; 16.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 16.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 68V; 16.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 16.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2166 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.35 грн |
| 15+ | 27.11 грн |
| 17+ | 23.96 грн |
| 50+ | 19.00 грн |
| 62+ | 15.05 грн |
| 169+ | 14.27 грн |
| SM15T36A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; unidirectional; SMC; reel,tape
Mounting: SMD
Case: SMC
Semiconductor structure: unidirectional
Type of diode: TVS
Leakage current: 1µA
Max. forward impulse current: 30A
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; unidirectional; SMC; reel,tape
Mounting: SMD
Case: SMC
Semiconductor structure: unidirectional
Type of diode: TVS
Leakage current: 1µA
Max. forward impulse current: 30A
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
на замовлення 704 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.91 грн |
| 9+ | 43.98 грн |
| 11+ | 38.31 грн |
| 50+ | 33.26 грн |
| 100+ | 27.04 грн |
| 250+ | 25.70 грн |
| 500+ | 23.65 грн |
| SM15T15A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15V; 71A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 71A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15V; 71A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 71A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1184 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.50 грн |
| 25+ | 30.66 грн |
| 50+ | 29.24 грн |
| 59+ | 15.84 грн |
| 161+ | 14.98 грн |
| SM15T22CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22V; 4.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22V; 4.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 3707 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.27 грн |
| 10+ | 48.40 грн |
| 62+ | 15.05 грн |
| 169+ | 14.27 грн |
| SM15T68A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 68V; 16.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 16.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 68V; 16.3A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 16.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 294 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 44.30 грн |
| 10+ | 42.56 грн |
| 50+ | 37.83 грн |
| 57+ | 16.24 грн |
| 157+ | 15.37 грн |
| SM15T220A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 220V; 4.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 188V
Breakdown voltage: 220V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 220V; 4.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 188V
Breakdown voltage: 220V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1211 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 61.12 грн |
| 10+ | 46.50 грн |
| 49+ | 19.00 грн |
| 135+ | 17.97 грн |
| SM15T200A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 200V; 5.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 200V; 5.5A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1174 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.02 грн |
| 10+ | 42.56 грн |
| 50+ | 18.68 грн |
| 137+ | 17.66 грн |
| SM15T150CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 150V; 7.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 7.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 150V; 7.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 7.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1179 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.21 грн |
| 10+ | 51.08 грн |
| 41+ | 22.54 грн |
| 113+ | 21.36 грн |
| SM15T56CAY |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 56V; 14.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 47.6V
Breakdown voltage: 56V
Max. forward impulse current: 14.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 56V; 14.3A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 47.6V
Breakdown voltage: 56V
Max. forward impulse current: 14.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 83.19 грн |
| 10+ | 59.90 грн |
| 51+ | 18.21 грн |
| 140+ | 17.18 грн |
| SM15T27A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 27V; 40A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 27V; 40A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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| SM15T12CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 90A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 90A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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од. на суму грн.
| SM15T200CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 200V; 5.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 200V; 5.5A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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| SM15T220CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 220V; 4.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 188V
Breakdown voltage: 220V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 220V; 4.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 188V
Breakdown voltage: 220V
Max. forward impulse current: 4.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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| SM15T22A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 49A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 49A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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од. на суму грн.
| SM15T24A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24V; 45A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 45A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24V; 45A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 45A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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| SM15T24CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24V; 45A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 45A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24V; 45A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 45A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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| LM2904AWYPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; TSSOP8; 3÷30VDC; IB: 0.2uA
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 0.6V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 3...30V DC
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; TSSOP8; 3÷30VDC; IB: 0.2uA
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 0.6V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 3...30V DC
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
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| LM2904AHYQ6T |
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 39.05 грн |
| STM32H725RGV3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; VFQFPN68; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 46
Case: VFQFPN68
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 564kB SRAM; 1MB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; VFQFPN68; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 46
Case: VFQFPN68
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 564kB SRAM; 1MB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
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| STM32H725RGV6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; VFQFPN68; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 46
Case: VFQFPN68
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 564kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 550MHz; VFQFPN68; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 550MHz
Mounting: SMD
Number of inputs/outputs: 46
Case: VFQFPN68
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; GPIO; HDMI CEC; I2C; I2S; LPUART; MDIO; PDM; SAI; SDMMC; SPDIF; SPI; UART; USART; USB
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 564kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Family: STM32H7
Kind of core: 32-bit
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| STTH1L06 |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 80ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO41
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 75µA
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 80ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO41
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 75µA
Kind of package: Ammo Pack
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| STTH1L06U |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 80ns; SMB; Ufmax: 1.05V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 80ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.05V
Max. forward impulse current: 20A
Kind of package: reel; tape
Max. load current: 7A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 80ns; SMB; Ufmax: 1.05V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 80ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.05V
Max. forward impulse current: 20A
Kind of package: reel; tape
Max. load current: 7A
на замовлення 80 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.01 грн |
| 28+ | 14.50 грн |
| 30+ | 13.32 грн |
| 50+ | 10.96 грн |
| STTH1L06RL |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel; Ifsm: 30A; DO41; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 80ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO41
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 75µA
Kind of package: reel
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel; Ifsm: 30A; DO41; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 80ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO41
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 75µA
Kind of package: reel
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| STTH1L06UFY |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 45ns; SMB flat; Ufmax: 1.4V; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB flat
Max. forward voltage: 1.4V
Max. forward impulse current: 20A
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 45ns; SMB flat; Ufmax: 1.4V; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB flat
Max. forward voltage: 1.4V
Max. forward impulse current: 20A
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
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| STB9NK90Z |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 87.43 грн |
| PD55003L-E |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 40V; 2.5A; 14W; PowerFLAT; SMT
Power dissipation: 14W
Drain-source voltage: 40V
Efficiency: 52%
Frequency: 500MHz
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerFLAT
Kind of package: reel; tape
Kind of transistor: RF
Electrical mounting: SMT
Polarisation: unipolar
Drain current: 2.5A
Output power: 3W
Open-loop gain: 19dB
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 40V; 2.5A; 14W; PowerFLAT; SMT
Power dissipation: 14W
Drain-source voltage: 40V
Efficiency: 52%
Frequency: 500MHz
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerFLAT
Kind of package: reel; tape
Kind of transistor: RF
Electrical mounting: SMT
Polarisation: unipolar
Drain current: 2.5A
Output power: 3W
Open-loop gain: 19dB
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| PD55025-E |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7A; 79W; PowerSO10RF
Power dissipation: 79W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Drain current: 7A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7A; 79W; PowerSO10RF
Power dissipation: 79W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Drain current: 7A
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| PD55025S-E |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 40V; 7A; 79W; PowerSO10RF; SMT
Power dissipation: 79W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Efficiency: 50%
Frequency: 500MHz
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Kind of package: tube
Kind of transistor: RF
Electrical mounting: SMT
Polarisation: unipolar
Drain current: 7A
Output power: 25W
Open-loop gain: 14.5dB
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 40V; 7A; 79W; PowerSO10RF; SMT
Power dissipation: 79W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Efficiency: 50%
Frequency: 500MHz
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Kind of package: tube
Kind of transistor: RF
Electrical mounting: SMT
Polarisation: unipolar
Drain current: 7A
Output power: 25W
Open-loop gain: 14.5dB
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| PD55003S-E |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2.5A; 31.7W; PowerSO10RF
Power dissipation: 31.7W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Drain current: 2.5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2.5A; 31.7W; PowerSO10RF
Power dissipation: 31.7W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Drain current: 2.5A
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| PD55003TR-E |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2.5A; 31.7W; PowerSO10RF
Power dissipation: 31.7W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain current: 2.5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2.5A; 31.7W; PowerSO10RF
Power dissipation: 31.7W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain current: 2.5A
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| PD55025TR-E |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7A; 79W; PowerSO10RF
Power dissipation: 79W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain current: 7A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7A; 79W; PowerSO10RF
Power dissipation: 79W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PowerSO10RF
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain current: 7A
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| M95080-DFMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz; SO8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Memory: 8kb EEPROM
Case: SO8
Clock frequency: 20MHz
Memory organisation: 1024x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz; SO8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Memory: 8kb EEPROM
Case: SO8
Clock frequency: 20MHz
Memory organisation: 1024x8bit
на замовлення 2493 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.35 грн |
| 14+ | 29.79 грн |
| 25+ | 27.75 грн |
| 100+ | 24.28 грн |
| 250+ | 21.12 грн |
| 1000+ | 19.71 грн |
| HVLED001BTR |
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Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver; boost,buck,flyback,SEPIC; SSOP10; 18V; Ch: 1; PWM
Type of integrated circuit: driver
Topology: boost; buck; flyback; SEPIC
Case: SSOP10
Output voltage: 18V
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating temperature: -40...125°C
Application: general purpose
Input voltage: 18V
Category: LED drivers
Description: IC: driver; boost,buck,flyback,SEPIC; SSOP10; 18V; Ch: 1; PWM
Type of integrated circuit: driver
Topology: boost; buck; flyback; SEPIC
Case: SSOP10
Output voltage: 18V
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating temperature: -40...125°C
Application: general purpose
Input voltage: 18V
на замовлення 19800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 95.92 грн |
| STBC15LJTR |
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Виробник: STMicroelectronics
Category: Battery and battery cells controllers
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Battery and battery cells controllers
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 134.12 грн |
| M95160-DFMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.7÷5.5V; 20MHz; SO8
Case: SO8
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Memory: 16kb EEPROM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.7÷5.5V; 20MHz; SO8
Case: SO8
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Memory: 16kb EEPROM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
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| M95160-DFDW6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.7÷5.5V; 20MHz
Case: TSSOP8
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Memory: 16kb EEPROM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.7÷5.5V; 20MHz
Case: TSSOP8
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Memory: 16kb EEPROM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
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| M95160-DFMC6TG |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.7÷5.5V; 20MHz
Case: UFDFPN8
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Memory: 16kb EEPROM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.7÷5.5V; 20MHz
Case: UFDFPN8
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.7...5.5V
Memory: 16kb EEPROM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
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| M95160-RDW6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 16kb EEPROM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 16kb EEPROM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
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| M95160-RMC6TG |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.8÷5.5V; 20MHz
Case: UFDFPN8
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 16kb EEPROM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.8÷5.5V; 20MHz
Case: UFDFPN8
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 16kb EEPROM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
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| M95160-RMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.8÷5.5V; 20MHz; SO8
Case: SO8
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 16kb EEPROM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 1.8÷5.5V; 20MHz; SO8
Case: SO8
Kind of interface: serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 16kb EEPROM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
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| STD16NF06LT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 40W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±18V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 40W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±18V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 1016 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 95.07 грн |
| 10+ | 59.83 грн |
| 46+ | 20.18 грн |
| 126+ | 19.07 грн |
| STD15NF10T4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 78.94 грн |
| 10+ | 56.52 грн |
| 2STD1665T4 |
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Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 6A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 6A
Current gain: 30...350
Collector-emitter voltage: 65V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 6A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 15W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 6A
Current gain: 30...350
Collector-emitter voltage: 65V
на замовлення 1435 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 86.58 грн |
| 10+ | 51.79 грн |
| 39+ | 24.20 грн |
| 105+ | 22.94 грн |
| STD1NK80ZT4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 45W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 45W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 16Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| STD16NF06T4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 40W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 40W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| STD130N6F7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 134W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 134W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 320A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 134W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 134W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 320A
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| TYN1225RG |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 40mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 25A
Load current: 16A
Gate current: 40mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.3kA
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 40mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 25A
Load current: 16A
Gate current: 40mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.3kA
на замовлення 51 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 319.17 грн |
| 3+ | 266.42 грн |
| 10+ | 235.68 грн |
| 50+ | 212.03 грн |
| TS512IYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; SO8; 3÷30VDC; reel,tape
Operating temperature: -40...125°C
Case: SO8
Mounting: SMT
Input offset current: 40nA
Input offset voltage: 3.5mV
Number of channels: 2
Slew rate: 1.5V/μs
Voltage supply range: 3...30V DC
Bandwidth: 3MHz
Kind of package: reel; tape
Application: automotive industry
Integrated circuit features: precision
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; SO8; 3÷30VDC; reel,tape
Operating temperature: -40...125°C
Case: SO8
Mounting: SMT
Input offset current: 40nA
Input offset voltage: 3.5mV
Number of channels: 2
Slew rate: 1.5V/μs
Voltage supply range: 3...30V DC
Bandwidth: 3MHz
Kind of package: reel; tape
Application: automotive industry
Integrated circuit features: precision
Type of integrated circuit: operational amplifier
товару немає в наявності
В кошику
од. на суму грн.
| TS512AIDT |
![]() |
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; SO8; 3÷30VDC; reel,tape
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: operational amplifier
Mounting: SMT
Integrated circuit features: precision
Input offset current: 40nA
Input offset voltage: 1.5mV
Slew rate: 1.5V/μs
Number of channels: 2
Voltage supply range: 3...30V DC
Bandwidth: 3MHz
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; SO8; 3÷30VDC; reel,tape
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: operational amplifier
Mounting: SMT
Integrated circuit features: precision
Input offset current: 40nA
Input offset voltage: 1.5mV
Slew rate: 1.5V/μs
Number of channels: 2
Voltage supply range: 3...30V DC
Bandwidth: 3MHz
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| TS512BIYDT |
![]() |
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; SO8; 3÷30VDC; reel,tape
Operating temperature: -40...125°C
Case: SO8
Mounting: SMT
Input offset current: 40nA
Input offset voltage: 1.5mV
Number of channels: 2
Slew rate: 1.5V/μs
Voltage supply range: 3...30V DC
Bandwidth: 3MHz
Kind of package: reel; tape
Application: automotive industry
Integrated circuit features: precision
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; SO8; 3÷30VDC; reel,tape
Operating temperature: -40...125°C
Case: SO8
Mounting: SMT
Input offset current: 40nA
Input offset voltage: 1.5mV
Number of channels: 2
Slew rate: 1.5V/μs
Voltage supply range: 3...30V DC
Bandwidth: 3MHz
Kind of package: reel; tape
Application: automotive industry
Integrated circuit features: precision
Type of integrated circuit: operational amplifier
товару немає в наявності
В кошику
од. на суму грн.










