Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (132172) > Сторінка 386 з 2203
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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STD12N65M2 | STMicroelectronics |
 Description: MOSFET N-CH 650V 8A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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STD130N4F6AG | STMicroelectronics |
Description: MOSFET N-CH 40V 80A DPAK Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 143W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 40A, 10V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STD130N4F6AG | STMicroelectronics |
Description: MOSFET N-CH 40V 80A DPAK Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 143W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STD13N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V |
на замовлення 619 шт: термін постачання 21-31 дні (днів) |
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STD13N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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STD16N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 12A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V |
на замовлення 3380 шт: термін постачання 21-31 дні (днів) |
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STD16N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 12A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STD35P6LLF6 | STMicroelectronics |
Description: MOSFET P-CH 60V 35A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 17.5A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V |
на замовлення 20272 шт: термін постачання 21-31 дні (днів) |
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STD35P6LLF6 | STMicroelectronics |
Description: MOSFET P-CH 60V 35A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 17.5A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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STD46P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V 46A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 23A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V |
на замовлення 871 шт: термін постачання 21-31 дні (днів) |
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STD46P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V 46A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 23A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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STD52P3LLH6 | STMicroelectronics |
Description: MOSFET P-CH 30V 52A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V |
на замовлення 3623 шт: термін постачання 21-31 дні (днів) |
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STD52P3LLH6 | STMicroelectronics |
Description: MOSFET P-CH 30V 52A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STH160N4LF6-2 | STMicroelectronics |
Description: MOSFET N-CH 40V 120A H2PAK-2 Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: H2Pak-2 Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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STH175N4F6-2AG | STMicroelectronics |
Description: MOSFET N-CH 40V 120A H2PAK-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 7735 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: H2Pak-2 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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STH175N4F6-6AG | STMicroelectronics |
Description: MOSFET N-CH 40V 120A H2PAK-2 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 7735 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Supplier Device Package: H2Pak-2 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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STH185N10F3-6 | STMicroelectronics |
Description: MOSFET N-CH 100V 180A H2PAK-6 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: H2PAK-6 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 315W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STH185N10F3-6 | STMicroelectronics |
Description: MOSFET N-CH 100V 180A H2PAK-6 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: H2PAK-6 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 315W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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STH245N75F3-6 | STMicroelectronics |
Description: MOSFET N-CH 75V 180A H2PAK-6 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: H2PAK-6 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
| STH265N6F6-6AG | STMicroelectronics |
Description: MOSFET N-CH 60V 180A H2PAK-6 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: H2PAK-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
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STH275N8F7-2AG | STMicroelectronics |
Description: MOSFET N-CH 80V 180A H2PAK-2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V Power Dissipation (Max): 315W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8491 шт: термін постачання 21-31 дні (днів) |
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STH275N8F7-2AG | STMicroelectronics |
Description: MOSFET N-CH 80V 180A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V Power Dissipation (Max): 315W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2Pak-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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STH275N8F7-6AG | STMicroelectronics |
Description: MOSFET N-CH 80V 180A H2PAK-6 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V Power Dissipation (Max): 315W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2PAK-6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1010 шт: термін постачання 21-31 дні (днів) |
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STH275N8F7-6AG | STMicroelectronics |
Description: MOSFET N-CH 80V 180A H2PAK-6 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V Power Dissipation (Max): 315W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2PAK-6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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STL13N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 6.5A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 475mOhm @ 3A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STL13N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 6.5A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 475mOhm @ 3A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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STL18N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 8A POWERFLAT HV Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 365mOhm @ 4A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 764 pF @ 100 V |
на замовлення 2044 шт: термін постачання 21-31 дні (днів) |
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STL18N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 8A POWERFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 365mOhm @ 4A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 764 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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STL42P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V 42A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V |
на замовлення 7551 шт: термін постачання 21-31 дні (днів) |
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STL42P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V 42A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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STL62P3LLH6 | STMicroelectronics |
Description: MOSFET P-CH 30V 62A POWERFLAT Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PowerFlat™ (5x6) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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STS10P3LLH6 | STMicroelectronics |
Description: MOSFET P-CH 30V 10A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V |
на замовлення 74 шт: термін постачання 21-31 дні (днів) |
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STS10P3LLH6 | STMicroelectronics |
Description: MOSFET P-CH 30V 10A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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STS10P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V 10A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 3A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V |
на замовлення 1999 шт: термін постачання 21-31 дні (днів) |
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STS10P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V 10A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 3A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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STTH30ST06GY-TR | STMicroelectronics |
Description: DIODE GEN PURP 600V 30A D2PAK |
на замовлення 89 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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STTH30ST06GY-TR | STMicroelectronics |
Description: DIODE GEN PURP 600V 30A D2PAK |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TS110-8UF | STMicroelectronics |
Description: SCR 800V 1.25A SMBFLAT-3L Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A Current - Gate Trigger (Igt) (Max): 100 µA Current - Hold (Ih) (Max): 12 mA Operating Temperature: -40°C ~ 125°C SCR Type: Sensitive Gate Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Packaging: Cut Tape (CT) Voltage - Off State: 800 V Current - On State (It (RMS)) (Max): 1.25 A Part Status: Active Supplier Device Package: SMBflat-3L Voltage - On State (Vtm) (Max): 1.6 V Voltage - Gate Trigger (Vgt) (Max): 800 mV Current - On State (It (AV)) (Max): 800 mA |
на замовлення 8546 шт: термін постачання 21-31 дні (днів) |
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TS110-8UF | STMicroelectronics |
Description: SCR 800V 1.25A SMBFLAT-3L Operating Temperature: -40°C ~ 125°C SCR Type: Sensitive Gate Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Packaging: Tape & Reel (TR) Voltage - Off State: 800 V Current - On State (It (RMS)) (Max): 1.25 A Part Status: Active Supplier Device Package: SMBflat-3L Voltage - On State (Vtm) (Max): 1.6 V Voltage - Gate Trigger (Vgt) (Max): 800 mV Current - On State (It (AV)) (Max): 800 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A Current - Gate Trigger (Igt) (Max): 100 µA Current - Hold (Ih) (Max): 12 mA |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BALF-NRF01E3 | STMicroelectronics |
Description: BALUN 2.4GHZ-2.54GHZ 6XFLGA Packaging: Cut Tape (CT) Package / Case: 6-XFLGA Mounting Type: Surface Mount Frequency Range: 2.4GHz ~ 2.54GHz Impedance - Unbalanced/Balanced: 50 / -Ohm Insertion Loss (Max): 2.2dB Return Loss (Min): 15dB Phase Difference: 4° |
на замовлення 51101 шт: термін постачання 21-31 дні (днів) |
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BALF-NRF01E3 | STMicroelectronics |
Description: BALUN 2.4GHZ-2.54GHZ 6XFLGA Packaging: Tape & Reel (TR) Package / Case: 6-XFLGA Mounting Type: Surface Mount Frequency Range: 2.4GHz ~ 2.54GHz Impedance - Unbalanced/Balanced: 50 / -Ohm Insertion Loss (Max): 2.2dB Return Loss (Min): 15dB Phase Difference: 4° |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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CBTVS2A12-1F3 | STMicroelectronics |
Description: TVS DIODE 10VWM 15VC FLIPCHIP |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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CBTVS2A12-1F3 | STMicroelectronics |
Description: TVS DIODE 10VWM 15VC FLIPCHIP |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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ESDARF02-1BU2 | STMicroelectronics |
Description: TVS DIODE 3VWM 30VC ST0201 Power Line Protection: No Power - Peak Pulse: 30W Voltage - Clamping (Max) @ Ipp: 30V Voltage - Breakdown (Min): 6V Bidirectional Channels: 1 Supplier Device Package: ST0201 Voltage - Reverse Standoff (Typ): 3V Current - Peak Pulse (10/1000µs): 1A (8/20µs) Capacitance @ Frequency: 0.24pF @ 200MHz ~ 3GHz Applications: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Packaging: Cut Tape (CT) |
на замовлення 27520 шт: термін постачання 21-31 дні (днів) |
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ESDARF02-1BU2 | STMicroelectronics |
Description: TVS DIODE 3VWM 30VC ST0201 Power Line Protection: No Power - Peak Pulse: 30W Voltage - Clamping (Max) @ Ipp: 30V Voltage - Breakdown (Min): 6V Bidirectional Channels: 1 Supplier Device Package: ST0201 Voltage - Reverse Standoff (Typ): 3V Current - Peak Pulse (10/1000µs): 1A (8/20µs) Capacitance @ Frequency: 0.24pF @ 200MHz ~ 3GHz Applications: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||||||
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ESDAVLC12-1BV2 | STMicroelectronics |
Description: TVS DIODE 10.5VWM 20VC ST01005 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 7pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 10.5V Supplier Device Package: ST01005 Bidirectional Channels: 1 Voltage - Breakdown (Min): 12V Voltage - Clamping (Max) @ Ipp: 20V Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||||||||||
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ESDAVLC5-4BX4 | STMicroelectronics |
Description: TVS DIODE 3VWM 18VC 4-MICRO-X Packaging: Tape & Reel (TR) Package / Case: 4-Micro-X Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -30°C ~ 85°C (TA) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: 4-Micro-X Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 18V Power - Peak Pulse: 30W Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LD39020ADTPU18R | STMicroelectronics |
Description: IC REG LINEAR 1.8V 200MA 4-DFN Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active PSRR: 80dB ~ 55dB (1kHz ~ 100kHz) Voltage Dropout (Max): 0.35V @ 200mA Protection Features: Over Current, Over Temperature, Soft Start |
на замовлення 8635 шт: термін постачання 21-31 дні (днів) |
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LD39020ADTPU18R | STMicroelectronics |
Description: IC REG LINEAR 1.8V 200MA 4-DFN Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Part Status: Active PSRR: 80dB ~ 55dB (1kHz ~ 100kHz) Voltage Dropout (Max): 0.35V @ 200mA Protection Features: Over Current, Over Temperature, Soft Start |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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LD39020ADTPU21R | STMicroelectronics |
Description: IC REG LINEAR 2.1V 200MA 4-DFN Protection Features: Over Current, Over Temperature, Soft Start Voltage Dropout (Max): 0.35V @ 200mA PSRR: 80dB ~ 55dB (1kHz ~ 100kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 2.1V Supplier Device Package: 4-DFN (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 40 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LD39020ADTPU21R | STMicroelectronics |
Description: IC REG LINEAR 2.1V 200MA 4-DFN Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Tape & Reel (TR) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 2.1V Supplier Device Package: 4-DFN (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 40 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 200mA Mounting Type: Surface Mount Protection Features: Over Current, Over Temperature, Soft Start Voltage Dropout (Max): 0.35V @ 200mA PSRR: 80dB ~ 55dB (1kHz ~ 100kHz) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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LD39020ADTPU25R | STMicroelectronics |
Description: IC REG LINEAR 2.5V 200MA 4-DFN Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active PSRR: 80dB ~ 55dB (1kHz ~ 100kHz) Voltage Dropout (Max): 0.35V @ 200mA Protection Features: Over Current, Over Temperature, Soft Start |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LD39020ADTPU25R | STMicroelectronics |
Description: IC REG LINEAR 2.5V 200MA 4-DFN Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active PSRR: 80dB ~ 55dB (1kHz ~ 100kHz) Voltage Dropout (Max): 0.35V @ 200mA Protection Features: Over Current, Over Temperature, Soft Start |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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LD39020ADTPU33R | STMicroelectronics |
Description: IC REG LINEAR 3.3V 200MA 4-DFN Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 80dB ~ 55dB (1kHz ~ 100kHz) Voltage Dropout (Max): 0.35V @ 200mA Protection Features: Over Current, Over Temperature, Soft Start |
на замовлення 10720 шт: термін постачання 21-31 дні (днів) |
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LD39020ADTPU33R | STMicroelectronics |
Description: IC REG LINEAR 3.3V 200MA 4-DFN Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 40 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-DFN (1x1) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 80dB ~ 55dB (1kHz ~ 100kHz) Voltage Dropout (Max): 0.35V @ 200mA Protection Features: Over Current, Over Temperature, Soft Start |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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LD39020DTPU13R | STMicroelectronics |
Description: IC REG LINEAR 1.3V 200MA 4DFN Protection Features: Over Current, Over Temperature, Soft Start Voltage Dropout (Max): 0.35V @ 200mA PSRR: 80dB ~ 55dB (1kHz ~ 100kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 1.3V Supplier Device Package: 4-DFN (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Cut Tape (CT) Current - Quiescent (Iq): 40 µA Output Configuration: Positive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LD39020DTPU13R | STMicroelectronics |
Description: IC REG LINEAR 1.3V 200MA 4DFN Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Tape & Reel (TR) Protection Features: Over Current, Over Temperature, Soft Start Voltage Dropout (Max): 0.35V @ 200mA PSRR: 80dB ~ 55dB (1kHz ~ 100kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 1.3V Supplier Device Package: 4-DFN (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 40 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 200mA |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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LD39020DTPU18R | STMicroelectronics |
Description: IC REG LINEAR 1.8V 200MA 4-DFN Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 40 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Cut Tape (CT) Protection Features: Over Current, Over Temperature, Soft Start Voltage Dropout (Max): 0.35V @ 200mA PSRR: 80dB ~ 55dB (1kHz ~ 100kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 1.8V Supplier Device Package: 4-DFN (1x1) Number of Regulators: 1 |
на замовлення 9736 шт: термін постачання 21-31 дні (днів) |
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LD39020DTPU18R | STMicroelectronics |
Description: IC REG LINEAR 1.8V 200MA 4-DFN Supplier Device Package: 4-DFN (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 40 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Tape & Reel (TR) Protection Features: Over Current, Over Temperature, Soft Start Voltage Dropout (Max): 0.35V @ 200mA PSRR: 80dB ~ 55dB (1kHz ~ 100kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 1.8V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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LD39020TPU32R | STMicroelectronics |
Description: IC REG LINEAR 3.2V 200MA 4-DFN Protection Features: Over Current, Over Temperature, Soft Start Voltage Dropout (Max): 0.35V @ 200mA PSRR: 80dB ~ 55dB (1kHz ~ 100kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 3.2V Supplier Device Package: 4-DFN (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 40 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 200mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| STD12N65M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 100 V
Description: MOSFET N-CH 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STD130N4F6AG |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 40A, 10V
Description: MOSFET N-CH 40V 80A DPAK
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 40A, 10V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.59 грн |
| 10+ | 101.10 грн |
| 100+ | 80.47 грн |
| 500+ | 63.90 грн |
| 1000+ | 54.22 грн |
| STD130N4F6AG |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 80A DPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 57.00 грн |
| STD13N65M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Description: MOSFET N-CH 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
на замовлення 619 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 166.94 грн |
| 10+ | 103.16 грн |
| 50+ | 78.17 грн |
| 100+ | 65.80 грн |
| 500+ | 52.54 грн |
| STD13N65M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Description: MOSFET N-CH 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STD16N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Description: MOSFET N-CH 600V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
на замовлення 3380 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 153.49 грн |
| 10+ | 94.85 грн |
| 50+ | 71.75 грн |
| 100+ | 60.33 грн |
| 500+ | 48.04 грн |
| STD16N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Description: MOSFET N-CH 600V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 44.06 грн |
| STD35P6LLF6 |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 60V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 17.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
Description: MOSFET P-CH 60V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 17.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
на замовлення 20272 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 164.56 грн |
| 10+ | 101.63 грн |
| 50+ | 77.04 грн |
| 100+ | 64.86 грн |
| 500+ | 51.80 грн |
| STD35P6LLF6 |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 60V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 17.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
Description: MOSFET P-CH 60V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 17.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 47.65 грн |
| 7500+ | 41.38 грн |
| STD46P4LLF6 |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 40V 46A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 23A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V
Description: MOSFET P-CH 40V 46A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 23A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V
на замовлення 871 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 138.45 грн |
| 10+ | 85.10 грн |
| 100+ | 57.35 грн |
| 500+ | 42.67 грн |
| STD46P4LLF6 |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 40V 46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 23A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V
Description: MOSFET P-CH 40V 46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 23A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STD52P3LLH6 |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 30V 52A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V
Description: MOSFET P-CH 30V 52A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V
на замовлення 3623 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.75 грн |
| 10+ | 79.23 грн |
| 100+ | 53.23 грн |
| 500+ | 39.48 грн |
| 1000+ | 36.12 грн |
| STD52P3LLH6 |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 30V 52A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V
Description: MOSFET P-CH 30V 52A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 35.93 грн |
| STH160N4LF6-2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 120A H2PAK-2
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 120A H2PAK-2
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STH175N4F6-2AG |
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 120A H2PAK-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7735 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 40V 120A H2PAK-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7735 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STH175N4F6-6AG |
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 120A H2PAK-2
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7735 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 40V 120A H2PAK-2
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7735 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STH185N10F3-6 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 315W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 180A H2PAK-6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 315W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| STH185N10F3-6 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 315W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 180A H2PAK-6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 315W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STH245N75F3-6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 75V 180A H2PAK-6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 75V 180A H2PAK-6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STH265N6F6-6AG |
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STH275N8F7-2AG |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8491 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 469.16 грн |
| 10+ | 303.07 грн |
| 100+ | 219.09 грн |
| 500+ | 192.05 грн |
| STH275N8F7-2AG |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 178.42 грн |
| 2000+ | 167.19 грн |
| STH275N8F7-6AG |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1010 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 394.79 грн |
| 10+ | 253.32 грн |
| 100+ | 181.42 грн |
| 500+ | 153.62 грн |
| STH275N8F7-6AG |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 146.32 грн |
| STL13N65M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 6.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 475mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Description: MOSFET N-CH 650V 6.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 475mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STL13N65M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 6.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 475mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Description: MOSFET N-CH 650V 6.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 475mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STL18N65M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 8A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 4A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 764 pF @ 100 V
Description: MOSFET N-CH 650V 8A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 4A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 764 pF @ 100 V
на замовлення 2044 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 238.14 грн |
| 10+ | 149.32 грн |
| 50+ | 114.83 грн |
| 100+ | 97.34 грн |
| 500+ | 79.06 грн |
| STL18N65M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 8A POWERFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 4A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 764 pF @ 100 V
Description: MOSFET N-CH 650V 8A POWERFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 4A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 764 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STL42P4LLF6 |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 40V 42A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Description: MOSFET P-CH 40V 42A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
на замовлення 7551 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.90 грн |
| 10+ | 93.48 грн |
| 100+ | 63.35 грн |
| 500+ | 47.33 грн |
| 1000+ | 43.43 грн |
| STL42P4LLF6 |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 40V 42A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Description: MOSFET P-CH 40V 42A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 42.58 грн |
| 6000+ | 38.35 грн |
| STL62P3LLH6 |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 30V 62A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 62A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STS10P3LLH6 |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V
Description: MOSFET P-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V
на замовлення 74 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.39 грн |
| 10+ | 66.13 грн |
| STS10P3LLH6 |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V
Description: MOSFET P-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STS10P4LLF6 |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 40V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 3A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V
Description: MOSFET P-CH 40V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 3A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V
на замовлення 1999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.47 грн |
| 10+ | 72.68 грн |
| 100+ | 48.57 грн |
| 500+ | 35.88 грн |
| 1000+ | 32.76 грн |
| STS10P4LLF6 |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 40V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 3A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V
Description: MOSFET P-CH 40V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 3A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STTH30ST06GY-TR |
|
Виробник: STMicroelectronics
Description: DIODE GEN PURP 600V 30A D2PAK
Description: DIODE GEN PURP 600V 30A D2PAK
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
| STTH30ST06GY-TR |
|
Виробник: STMicroelectronics
Description: DIODE GEN PURP 600V 30A D2PAK
Description: DIODE GEN PURP 600V 30A D2PAK
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TS110-8UF |
|
Виробник: STMicroelectronics
Description: SCR 800V 1.25A SMBFLAT-3L
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Hold (Ih) (Max): 12 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Cut Tape (CT)
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 1.25 A
Part Status: Active
Supplier Device Package: SMBflat-3L
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 800 mA
Description: SCR 800V 1.25A SMBFLAT-3L
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Hold (Ih) (Max): 12 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Cut Tape (CT)
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 1.25 A
Part Status: Active
Supplier Device Package: SMBflat-3L
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 800 mA
на замовлення 8546 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.12 грн |
| 10+ | 47.84 грн |
| 100+ | 31.41 грн |
| 500+ | 22.84 грн |
| 1000+ | 20.70 грн |
| 2000+ | 18.90 грн |
| TS110-8UF |
|
Виробник: STMicroelectronics
Description: SCR 800V 1.25A SMBFLAT-3L
Operating Temperature: -40°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Tape & Reel (TR)
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 1.25 A
Part Status: Active
Supplier Device Package: SMBflat-3L
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 800 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Hold (Ih) (Max): 12 mA
Description: SCR 800V 1.25A SMBFLAT-3L
Operating Temperature: -40°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Tape & Reel (TR)
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 1.25 A
Part Status: Active
Supplier Device Package: SMBflat-3L
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 800 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Hold (Ih) (Max): 12 mA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 18.77 грн |
| BALF-NRF01E3 |
|
Виробник: STMicroelectronics
Description: BALUN 2.4GHZ-2.54GHZ 6XFLGA
Packaging: Cut Tape (CT)
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.54GHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 2.2dB
Return Loss (Min): 15dB
Phase Difference: 4°
Description: BALUN 2.4GHZ-2.54GHZ 6XFLGA
Packaging: Cut Tape (CT)
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.54GHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 2.2dB
Return Loss (Min): 15dB
Phase Difference: 4°
на замовлення 51101 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.56 грн |
| 10+ | 37.94 грн |
| 25+ | 25.35 грн |
| 50+ | 21.18 грн |
| 100+ | 19.40 грн |
| 250+ | 17.41 грн |
| 500+ | 16.77 грн |
| 1000+ | 12.13 грн |
| BALF-NRF01E3 |
|
Виробник: STMicroelectronics
Description: BALUN 2.4GHZ-2.54GHZ 6XFLGA
Packaging: Tape & Reel (TR)
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.54GHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 2.2dB
Return Loss (Min): 15dB
Phase Difference: 4°
Description: BALUN 2.4GHZ-2.54GHZ 6XFLGA
Packaging: Tape & Reel (TR)
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.54GHz
Impedance - Unbalanced/Balanced: 50 / -Ohm
Insertion Loss (Max): 2.2dB
Return Loss (Min): 15dB
Phase Difference: 4°
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 12.04 грн |
| 10000+ | 11.21 грн |
| CBTVS2A12-1F3 |
|
Виробник: STMicroelectronics
Description: TVS DIODE 10VWM 15VC FLIPCHIP
Description: TVS DIODE 10VWM 15VC FLIPCHIP
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| CBTVS2A12-1F3 |
|
Виробник: STMicroelectronics
Description: TVS DIODE 10VWM 15VC FLIPCHIP
Description: TVS DIODE 10VWM 15VC FLIPCHIP
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| ESDARF02-1BU2 |
|
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 30VC ST0201
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Clamping (Max) @ Ipp: 30V
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: ST0201
Voltage - Reverse Standoff (Typ): 3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.24pF @ 200MHz ~ 3GHz
Applications: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Description: TVS DIODE 3VWM 30VC ST0201
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Clamping (Max) @ Ipp: 30V
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: ST0201
Voltage - Reverse Standoff (Typ): 3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.24pF @ 200MHz ~ 3GHz
Applications: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
на замовлення 27520 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.06 грн |
| 16+ | 19.96 грн |
| 100+ | 10.09 грн |
| 500+ | 7.73 грн |
| 1000+ | 5.74 грн |
| 2000+ | 4.83 грн |
| 5000+ | 4.54 грн |
| ESDARF02-1BU2 |
|
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 30VC ST0201
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Clamping (Max) @ Ipp: 30V
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: ST0201
Voltage - Reverse Standoff (Typ): 3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.24pF @ 200MHz ~ 3GHz
Applications: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Description: TVS DIODE 3VWM 30VC ST0201
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Clamping (Max) @ Ipp: 30V
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: ST0201
Voltage - Reverse Standoff (Typ): 3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.24pF @ 200MHz ~ 3GHz
Applications: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| ESDAVLC12-1BV2 |
Виробник: STMicroelectronics
Description: TVS DIODE 10.5VWM 20VC ST01005
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 10.5V
Supplier Device Package: ST01005
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 10.5VWM 20VC ST01005
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 10.5V
Supplier Device Package: ST01005
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 20000 шт
В кошику
од. на суму грн.
| ESDAVLC5-4BX4 |
|
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 18VC 4-MICRO-X
Packaging: Tape & Reel (TR)
Package / Case: 4-Micro-X
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -30°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 4-Micro-X
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3VWM 18VC 4-MICRO-X
Packaging: Tape & Reel (TR)
Package / Case: 4-Micro-X
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -30°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 4-Micro-X
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| LD39020ADTPU18R |
|
Виробник: STMicroelectronics
Description: IC REG LINEAR 1.8V 200MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.35V @ 200mA
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LINEAR 1.8V 200MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.35V @ 200mA
Protection Features: Over Current, Over Temperature, Soft Start
на замовлення 8635 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.94 грн |
| 20+ | 15.54 грн |
| 25+ | 13.80 грн |
| 100+ | 11.16 грн |
| 250+ | 10.30 грн |
| 500+ | 9.79 грн |
| 1000+ | 9.21 грн |
| 2500+ | 8.85 грн |
| LD39020ADTPU18R |
|
Виробник: STMicroelectronics
Description: IC REG LINEAR 1.8V 200MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.35V @ 200mA
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LINEAR 1.8V 200MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.35V @ 200mA
Protection Features: Over Current, Over Temperature, Soft Start
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| LD39020ADTPU21R |
|
Виробник: STMicroelectronics
Description: IC REG LINEAR 2.1V 200MA 4-DFN
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.35V @ 200mA
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.1V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 2.1V 200MA 4-DFN
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.35V @ 200mA
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.1V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| LD39020ADTPU21R |
|
Виробник: STMicroelectronics
Description: IC REG LINEAR 2.1V 200MA 4-DFN
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.1V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.35V @ 200mA
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Description: IC REG LINEAR 2.1V 200MA 4-DFN
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.1V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.35V @ 200mA
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| LD39020ADTPU25R |
|
Виробник: STMicroelectronics
Description: IC REG LINEAR 2.5V 200MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.35V @ 200mA
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LINEAR 2.5V 200MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.35V @ 200mA
Protection Features: Over Current, Over Temperature, Soft Start
товару немає в наявності
В кошику
од. на суму грн.
| LD39020ADTPU25R |
|
Виробник: STMicroelectronics
Description: IC REG LINEAR 2.5V 200MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.35V @ 200mA
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LINEAR 2.5V 200MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.35V @ 200mA
Protection Features: Over Current, Over Temperature, Soft Start
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| LD39020ADTPU33R |
|
Виробник: STMicroelectronics
Description: IC REG LINEAR 3.3V 200MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.35V @ 200mA
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LINEAR 3.3V 200MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.35V @ 200mA
Protection Features: Over Current, Over Temperature, Soft Start
на замовлення 10720 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.94 грн |
| 20+ | 15.54 грн |
| 25+ | 13.80 грн |
| 100+ | 11.17 грн |
| 250+ | 10.31 грн |
| 500+ | 9.80 грн |
| 1000+ | 9.22 грн |
| 2500+ | 8.86 грн |
| LD39020ADTPU33R |
|
Виробник: STMicroelectronics
Description: IC REG LINEAR 3.3V 200MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.35V @ 200mA
Protection Features: Over Current, Over Temperature, Soft Start
Description: IC REG LINEAR 3.3V 200MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.35V @ 200mA
Protection Features: Over Current, Over Temperature, Soft Start
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 9.33 грн |
| LD39020DTPU13R |
|
Виробник: STMicroelectronics
Description: IC REG LINEAR 1.3V 200MA 4DFN
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.35V @ 200mA
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Description: IC REG LINEAR 1.3V 200MA 4DFN
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.35V @ 200mA
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
товару немає в наявності
В кошику
од. на суму грн.
| LD39020DTPU13R |
|
Виробник: STMicroelectronics
Description: IC REG LINEAR 1.3V 200MA 4DFN
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.35V @ 200mA
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 200mA
Description: IC REG LINEAR 1.3V 200MA 4DFN
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.35V @ 200mA
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.3V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 200mA
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| LD39020DTPU18R |
|
Виробник: STMicroelectronics
Description: IC REG LINEAR 1.8V 200MA 4-DFN
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.35V @ 200mA
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Description: IC REG LINEAR 1.8V 200MA 4-DFN
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.35V @ 200mA
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
на замовлення 9736 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 26.11 грн |
| 18+ | 17.60 грн |
| 25+ | 15.63 грн |
| 100+ | 12.69 грн |
| 250+ | 11.74 грн |
| 500+ | 11.17 грн |
| 1000+ | 10.52 грн |
| 2500+ | 10.03 грн |
| 5000+ | 9.74 грн |
| LD39020DTPU18R |
|
Виробник: STMicroelectronics
Description: IC REG LINEAR 1.8V 200MA 4-DFN
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.35V @ 200mA
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Description: IC REG LINEAR 1.8V 200MA 4-DFN
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.35V @ 200mA
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| LD39020TPU32R |
|
Виробник: STMicroelectronics
Description: IC REG LINEAR 3.2V 200MA 4-DFN
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.35V @ 200mA
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.2V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 3.2V 200MA 4-DFN
Protection Features: Over Current, Over Temperature, Soft Start
Voltage Dropout (Max): 0.35V @ 200mA
PSRR: 80dB ~ 55dB (1kHz ~ 100kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.2V
Supplier Device Package: 4-DFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.