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SCTWA10N120 SCTWA10N120 STMicroelectronics sctwa10n120.pdf Description: IC POWER MOSFET 1200V HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA (Typ)
Supplier Device Package: HiP247™ Long Leads
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 1000 V
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SCTWA20N120 SCTWA20N120 STMicroelectronics sctwa20n120.pdf Description: IC POWER MOSFET 1200V HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 239mOhm @ 10A, 20V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA (Typ)
Supplier Device Package: HiP247™ Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V
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SCTWA30N120 SCTWA30N120 STMicroelectronics sctwa30n120.pdf Description: IC POWER MOSFET 1200V HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA (Typ)
Supplier Device Package: HiP247™ Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
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SRK2001 SRK2001 STMicroelectronics en.DM00156259.pdf Description: IC REG CTLR AC-DC LLC RES 10SSOP
Packaging: Tube
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 4.5V ~ 32V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 10-SSOP
Part Status: Active
Current - Supply: 35 mA
DigiKey Programmable: Not Verified
на замовлення 1278 шт:
термін постачання 21-31 дні (днів)
3+155.60 грн
10+111.08 грн
25+101.25 грн
100+84.88 грн
300+79.21 грн
500+77.11 грн
1000+73.48 грн
Мінімальне замовлення: 3
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SRK2001A SRK2001A STMicroelectronics en.DM00306994.pdf Description: IC REG CTLR AC-DC LLC RES 10SSOP
Packaging: Tube
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 4.5V ~ 32V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 10-SSOP
Current - Supply: 35 mA
DigiKey Programmable: Not Verified
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STCMB1 STCMB1 STMicroelectronics en.DM00267415.pdf Description: IC PFC CTL TRANSITION 500KZ 20SO
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Frequency - Switching: 500kHz
Mode: Discontinuous (Transition)
Supplier Device Package: 20-SO
на замовлення 930 шт:
термін постачання 21-31 дні (днів)
2+246.11 грн
10+177.59 грн
25+162.87 грн
100+137.65 грн
250+130.41 грн
500+126.05 грн
Мінімальне замовлення: 2
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STF12NK80Z STF12NK80Z STMicroelectronics en.CD00003379.pdf Description: MOSFET N-CH 800V 10.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.25A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
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STF14N80K5 STF14N80K5 STMicroelectronics en.DM00175189.pdf Description: MOSFET N-CH 800V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
на замовлення 599 шт:
термін постачання 21-31 дні (днів)
2+278.66 грн
10+176.21 грн
100+123.50 грн
500+94.78 грн
Мінімальне замовлення: 2
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STF17N80K5 STF17N80K5 STMicroelectronics en.DM00172907.pdf Description: MOSFET N-CH 800V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 866 pF @ 100 V
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STF18N60DM2 STF18N60DM2 STMicroelectronics en.DM00172444.pdf Description: MOSFET N-CH 600V 13A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
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STF20N60M2-EP STF20N60M2-EP STMicroelectronics stf20n60m2-ep.pdf Description: MOSFET N-CH 600V 13A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
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STF22NM60ND STF22NM60ND STMicroelectronics en.DM00133034.pdf Description: MOSFET N-CH 600V 17A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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STF3LN80K5 STF3LN80K5 STMicroelectronics en.DM00175100.pdf Description: MOSFET N-CH 800V 2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V
на замовлення 1637 шт:
термін постачання 21-31 дні (днів)
3+112.73 грн
50+60.99 грн
100+59.48 грн
500+47.82 грн
1000+40.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF4LN80K5 STF4LN80K5 STMicroelectronics en.DM00179664.pdf Description: MOSFET N-CH 800V 3A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 100 V
на замовлення 1934 шт:
термін постачання 21-31 дні (днів)
4+79.39 грн
50+53.76 грн
100+50.49 грн
500+44.52 грн
1000+44.12 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STF8N60DM2 STF8N60DM2 STMicroelectronics en.DM00184991.pdf Description: MOSFET N-CH 600V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FPAB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 449 pF @ 100 V
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STFI14N80K5 STFI14N80K5 STMicroelectronics en.DM00175189.pdf Description: MOSFET N-CH 800V 12A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
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STFI16N65M2 STMicroelectronics Description: MOSFET N-CH 650V I2PAK-FP
Packaging: Tube
Part Status: Active
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STFI18N65M2 STMicroelectronics Description: MOSFET N-CH 650V I2PAK-FP
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STFU13N60M2 STMicroelectronics stfu13n60m2.pdf Description: MOSFET N-CH 600V TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
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STFU18N60M2 STMicroelectronics stfu18n60m2.pdf Description: MOSFET N-CH 600V TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
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STFW12N120K5 STFW12N120K5 STMicroelectronics en.DM00117846.pdf Description: MOSFET N-CH 1200V 12A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
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STFW20N65M5 STFW20N65M5 STMicroelectronics en.DM00076416.pdf Description: MOSFET N-CH 650V 18A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V
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STFW24NM60N STMicroelectronics Description: MOSFET N-CH 600V TO-3PH
Packaging: Tube
Part Status: Active
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STGF30M65DF2 STGF30M65DF2 STMicroelectronics en.DM00157912.pdf Description: IGBT TRENCH FS 650V 60A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31.6ns/115ns
Switching Energy: 300µJ (on), 960µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 38 W
на замовлення 734 шт:
термін постачання 21-31 дні (днів)
2+238.96 грн
50+114.81 грн
100+103.61 грн
500+78.82 грн
Мінімальне замовлення: 2
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STGF6M65DF2 STGF6M65DF2 STMicroelectronics en.DM00248773.pdf Description: IGBT TRENCH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/90ns
Switching Energy: 36µJ (on), 200µJ (off)
Test Condition: 400V, 6A, 22Ohm, 15V
Gate Charge: 21.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 24.2 W
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
3+116.70 грн
10+92.20 грн
Мінімальне замовлення: 3
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STGIPN3H60-E STMicroelectronics STGIPN3H60-E.pdf Description: PWR MODULE 600V 3A 26-POWERDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (0.846", 21.48mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1000Vrms
Part Status: Active
Current: 3 A
Voltage: 600 V
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STGIPQ3H60T-HLS STMicroelectronics en.DM00213902.pdf Description: PWR MODULE 600V 3A 26DIP
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STGP20M65DF2 STGP20M65DF2 STMicroelectronics en.DM00245294.pdf Description: IGBT TRENCH FS 650V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/108ns
Switching Energy: 140µJ (on), 560µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 166 W
на замовлення 871 шт:
термін постачання 21-31 дні (днів)
2+222.29 грн
50+106.77 грн
100+96.29 грн
500+73.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STGWA20M65DF2 STGWA20M65DF2 STMicroelectronics en.DM00245493.pdf Description: IGBT TRENCH 650V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/108ns
Switching Energy: 140µJ (on), 560µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 166 W
товару немає в наявності
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STGWA40H60DLFB STGWA40H60DLFB STMicroelectronics Description: IGBT TRENCH 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 7V, 40A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 283 W
товару немає в наявності
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STP110N7F6 STP110N7F6 STMicroelectronics en.DM00131056.pdf Description: MOSFET N-CHANNEL 68V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 68 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
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STP130N8F7 STP130N8F7 STMicroelectronics Description: MOSFET N-CHANNEL 80V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Power Dissipation (Max): 205W (Tc)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
товару немає в наявності
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STP140N4F6 STP140N4F6 STMicroelectronics STP140N4F6_Rev1_Aug2015.pdf Description: MOSFET N-CHANNEL 40V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Power Dissipation (Max): 168W (Tc)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
товару немає в наявності
В кошику  од. на суму  грн.
STP14N80K5 STP14N80K5 STMicroelectronics STP14N80K5.pdf Description: MOSFET N-CHANNEL 800V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
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В кошику  од. на суму  грн.
STP17N80K5 STP17N80K5 STMicroelectronics en.DM00173138.pdf Description: MOSFET N-CHANNEL 800V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 866 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
STP180N4F6 STP180N4F6 STMicroelectronics stp180n4f6.pdf Description: MOSFET N-CHANNEL 40V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 190W (Tc)
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
на замовлення 566 шт:
термін постачання 21-31 дні (днів)
3+143.69 грн
50+73.60 грн
100+66.83 грн
500+51.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STP20N60M2-EP STP20N60M2-EP STMicroelectronics stp20n60m2-ep.pdf Description: MOSFET N-CHANNEL 600V 13A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 110W (Tc)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
товару немає в наявності
В кошику  од. на суму  грн.
STP26N60M2 STP26N60M2 STMicroelectronics en.DM00218389.pdf Description: MOSFET N-CHANNEL 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Power Dissipation (Max): 169W (Tc)
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
товару немає в наявності
В кошику  од. на суму  грн.
STP3LN80K5 STP3LN80K5 STMicroelectronics en.DM00175102.pdf Description: MOSFET N-CHANNEL 800V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V
на замовлення 967 шт:
термін постачання 21-31 дні (днів)
3+125.43 грн
50+64.13 грн
100+59.33 грн
500+44.18 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STP4LN80K5 STP4LN80K5 STMicroelectronics en.DM00180753.pdf Description: MOSFET N-CHANNEL 800V 3A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 100 V
на замовлення 968 шт:
термін постачання 21-31 дні (днів)
2+162.75 грн
50+76.10 грн
100+68.24 грн
500+51.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP78NF55-08 STMicroelectronics en.DM00312727.pdf Description: MOSFET N-CH 550V TO-220
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STP9N80K5 STP9N80K5 STMicroelectronics en.DM00236495.pdf Description: MOSFET N-CHANNEL 800V 7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
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STPA001AH STPA001AH STMicroelectronics en.DM00052126.pdf Description: IC AMP AB QUAD 50W 27FLEXIWATT
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В кошику  од. на суму  грн.
STPA002OD-4WX STPA002OD-4WX STMicroelectronics en.DM00079491.pdf Description: IC AMP AB QUAD 85W 25FLEXIWATT
Packaging: Tube
Features: Mute, Standby
Package / Case: 25-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Voltage - Supply: 6V ~ 18V
Max Output Power x Channels @ Load: 85W x 4 @ 2Ohm
Supplier Device Package: 25-Flexiwatt (Vertical)
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В кошику  од. на суму  грн.
STPA003HSD-48X STPA003HSD-48X STMicroelectronics en.DM00125748.pdf Description: IC AMP AB QUAD 85W 27FLEXIWATT
Packaging: Tube
Features: Mute, Short-Circuit and Thermal Protection, Standby
Package / Case: 27-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 6V ~ 18V
Max Output Power x Channels @ Load: 85W x 4 @ 2Ohm
Supplier Device Package: 27-Flexiwatt (Vertical)
товару немає в наявності
В кошику  од. на суму  грн.
STPA008-48X STPA008-48X STMicroelectronics en.DM00185962.pdf Description: IC AMP AB QUAD 50W 27FLEXIWATT
Packaging: Tube
Features: Short-Circuit and Thermal Protection
Package / Case: 27-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Max Output Power x Channels @ Load: 50W x 4 @ 4Ohm
Supplier Device Package: 27-Flexiwatt (Vertical)
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
STPA008-4WX STPA008-4WX STMicroelectronics en.DM00185962.pdf Description: IC AMP AB QUAD 50W 25FLEXIWATT
Packaging: Tube
Features: Short-Circuit and Thermal Protection
Package / Case: 25-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Max Output Power x Channels @ Load: 50W x 4 @ 4Ohm
Supplier Device Package: 25-Flexiwatt (Vertical)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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STPS2045CH STPS2045CH STMicroelectronics en.DM00052137.pdf Description: DIODE ARRAY SCHOTT 45V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: IPAK (TO-251)
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товару немає в наявності
В кошику  од. на суму  грн.
STPS20L60CTN STPS20L60CTN STMicroelectronics en.CD00001710.pdf Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB Narrow Leads
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
товару немає в наявності
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STPS4045CWY STPS4045CWY STMicroelectronics en.CD00285026.pdf Description: DIODE ARR SCHOTT 45V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1085 шт:
термін постачання 21-31 дні (днів)
2+158.78 грн
10+112.23 грн
100+71.08 грн
500+65.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STPSC20065D STPSC20065D STMicroelectronics en.DM00288636.pdf Description: DIODE SIL CARB 650V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
1+416.79 грн
10+336.76 грн
100+272.40 грн
500+227.24 грн
В кошику  од. на суму  грн.
STPSC20065DI STPSC20065DI STMicroelectronics en.DM00288636.pdf Description: DIODE SIC 650V 20A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
на замовлення 926 шт:
термін постачання 21-31 дні (днів)
1+520.00 грн
50+268.66 грн
100+246.28 грн
500+194.37 грн
В кошику  од. на суму  грн.
STPSC20065W STPSC20065W STMicroelectronics en.DM00288636.pdf Description: DIODE SIL CARBIDE 650V 20A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
товару немає в наявності
В кошику  од. на суму  грн.
STPSC20065WY STPSC20065WY STMicroelectronics en.DM00288933.pdf Description: DIODE SIL CARBIDE 650V 20A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
1+565.25 грн
30+290.00 грн
120+254.50 грн
В кошику  од. на суму  грн.
STPSC40065CWY STPSC40065CWY STMicroelectronics en.DM00289060.pdf Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 207 шт:
термін постачання 21-31 дні (днів)
1+925.68 грн
10+621.61 грн
100+469.30 грн
В кошику  од. на суму  грн.
STTH20P035FP STMicroelectronics Description: DIODE GEN PURP 350V 20A TO220FP
Packaging: Tube
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
STTH30AC06FP STTH30AC06FP STMicroelectronics STTH30AC06_Rev.Feb.23%2C2018_DS.pdf Description: DIODE STD 600V 30A TO220FPAC
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
на замовлення 1199 шт:
термін постачання 21-31 дні (днів)
3+144.49 грн
50+74.95 грн
100+74.27 грн
500+55.93 грн
1000+51.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STU3LN80K5 STU3LN80K5 STMicroelectronics en.DM00090304.pdf Description: MOSFET N-CHANNEL 800V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: IPAK (TO-251)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V
на замовлення 2991 шт:
термін постачання 21-31 дні (днів)
7+51.60 грн
75+33.19 грн
150+31.86 грн
525+28.99 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
STW20N60M2-EP STMicroelectronics Description: MOSFET N-CHANNEL 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 278mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 787 pF @ 100 V
товару немає в наявності
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STW26N60M2 STW26N60M2 STMicroelectronics en.DM00218389.pdf Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
на замовлення 335 шт:
термін постачання 21-31 дні (днів)
2+265.16 грн
10+176.90 грн
100+128.69 грн
Мінімальне замовлення: 2
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SCTWA10N120 sctwa10n120.pdf
SCTWA10N120
Виробник: STMicroelectronics
Description: IC POWER MOSFET 1200V HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA (Typ)
Supplier Device Package: HiP247™ Long Leads
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 1000 V
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SCTWA20N120 sctwa20n120.pdf
SCTWA20N120
Виробник: STMicroelectronics
Description: IC POWER MOSFET 1200V HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 239mOhm @ 10A, 20V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA (Typ)
Supplier Device Package: HiP247™ Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V
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SCTWA30N120 sctwa30n120.pdf
SCTWA30N120
Виробник: STMicroelectronics
Description: IC POWER MOSFET 1200V HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA (Typ)
Supplier Device Package: HiP247™ Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
товару немає в наявності
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SRK2001 en.DM00156259.pdf
SRK2001
Виробник: STMicroelectronics
Description: IC REG CTLR AC-DC LLC RES 10SSOP
Packaging: Tube
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 4.5V ~ 32V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 10-SSOP
Part Status: Active
Current - Supply: 35 mA
DigiKey Programmable: Not Verified
на замовлення 1278 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+155.60 грн
10+111.08 грн
25+101.25 грн
100+84.88 грн
300+79.21 грн
500+77.11 грн
1000+73.48 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SRK2001A en.DM00306994.pdf
SRK2001A
Виробник: STMicroelectronics
Description: IC REG CTLR AC-DC LLC RES 10SSOP
Packaging: Tube
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 4.5V ~ 32V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 10-SSOP
Current - Supply: 35 mA
DigiKey Programmable: Not Verified
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STCMB1 en.DM00267415.pdf
STCMB1
Виробник: STMicroelectronics
Description: IC PFC CTL TRANSITION 500KZ 20SO
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Frequency - Switching: 500kHz
Mode: Discontinuous (Transition)
Supplier Device Package: 20-SO
на замовлення 930 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+246.11 грн
10+177.59 грн
25+162.87 грн
100+137.65 грн
250+130.41 грн
500+126.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF12NK80Z en.CD00003379.pdf
STF12NK80Z
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 10.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.25A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
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STF14N80K5 en.DM00175189.pdf
STF14N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
на замовлення 599 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+278.66 грн
10+176.21 грн
100+123.50 грн
500+94.78 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF17N80K5 en.DM00172907.pdf
STF17N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 866 pF @ 100 V
товару немає в наявності
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STF18N60DM2 en.DM00172444.pdf
STF18N60DM2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
товару немає в наявності
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STF20N60M2-EP stf20n60m2-ep.pdf
STF20N60M2-EP
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
товару немає в наявності
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STF22NM60ND en.DM00133034.pdf
STF22NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 17A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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STF3LN80K5 en.DM00175100.pdf
STF3LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V
на замовлення 1637 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+112.73 грн
50+60.99 грн
100+59.48 грн
500+47.82 грн
1000+40.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STF4LN80K5 en.DM00179664.pdf
STF4LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 3A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 100 V
на замовлення 1934 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+79.39 грн
50+53.76 грн
100+50.49 грн
500+44.52 грн
1000+44.12 грн
Мінімальне замовлення: 4
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STF8N60DM2 en.DM00184991.pdf
STF8N60DM2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FPAB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 449 pF @ 100 V
товару немає в наявності
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STFI14N80K5 en.DM00175189.pdf
STFI14N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 12A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
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STFI16N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V I2PAK-FP
Packaging: Tube
Part Status: Active
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STFI18N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V I2PAK-FP
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STFU13N60M2 stfu13n60m2.pdf
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
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STFU18N60M2 stfu18n60m2.pdf
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
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STFW12N120K5 en.DM00117846.pdf
STFW12N120K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 1200V 12A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
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STFW20N65M5 en.DM00076416.pdf
STFW20N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 18A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V
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STFW24NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V TO-3PH
Packaging: Tube
Part Status: Active
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STGF30M65DF2 en.DM00157912.pdf
STGF30M65DF2
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 60A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31.6ns/115ns
Switching Energy: 300µJ (on), 960µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 38 W
на замовлення 734 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+238.96 грн
50+114.81 грн
100+103.61 грн
500+78.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STGF6M65DF2 en.DM00248773.pdf
STGF6M65DF2
Виробник: STMicroelectronics
Description: IGBT TRENCH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/90ns
Switching Energy: 36µJ (on), 200µJ (off)
Test Condition: 400V, 6A, 22Ohm, 15V
Gate Charge: 21.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 24.2 W
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+116.70 грн
10+92.20 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGIPN3H60-E STGIPN3H60-E.pdf
Виробник: STMicroelectronics
Description: PWR MODULE 600V 3A 26-POWERDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (0.846", 21.48mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1000Vrms
Part Status: Active
Current: 3 A
Voltage: 600 V
товару немає в наявності
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STGIPQ3H60T-HLS en.DM00213902.pdf
Виробник: STMicroelectronics
Description: PWR MODULE 600V 3A 26DIP
товару немає в наявності
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STGP20M65DF2 en.DM00245294.pdf
STGP20M65DF2
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/108ns
Switching Energy: 140µJ (on), 560µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 166 W
на замовлення 871 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+222.29 грн
50+106.77 грн
100+96.29 грн
500+73.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STGWA20M65DF2 en.DM00245493.pdf
STGWA20M65DF2
Виробник: STMicroelectronics
Description: IGBT TRENCH 650V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/108ns
Switching Energy: 140µJ (on), 560µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 166 W
товару немає в наявності
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STGWA40H60DLFB
STGWA40H60DLFB
Виробник: STMicroelectronics
Description: IGBT TRENCH 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 7V, 40A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 283 W
товару немає в наявності
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STP110N7F6 en.DM00131056.pdf
STP110N7F6
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 68V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 68 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
товару немає в наявності
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STP130N8F7
STP130N8F7
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 80V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Power Dissipation (Max): 205W (Tc)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
товару немає в наявності
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STP140N4F6 STP140N4F6_Rev1_Aug2015.pdf
STP140N4F6
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 40V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Power Dissipation (Max): 168W (Tc)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
товару немає в наявності
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STP14N80K5 STP14N80K5.pdf
STP14N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 800V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
товару немає в наявності
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STP17N80K5 en.DM00173138.pdf
STP17N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 800V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 866 pF @ 100 V
товару немає в наявності
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STP180N4F6 stp180n4f6.pdf
STP180N4F6
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 40V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 190W (Tc)
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
на замовлення 566 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+143.69 грн
50+73.60 грн
100+66.83 грн
500+51.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STP20N60M2-EP stp20n60m2-ep.pdf
STP20N60M2-EP
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 13A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 110W (Tc)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
товару немає в наявності
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STP26N60M2 en.DM00218389.pdf
STP26N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Power Dissipation (Max): 169W (Tc)
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
товару немає в наявності
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STP3LN80K5 en.DM00175102.pdf
STP3LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 800V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V
на замовлення 967 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+125.43 грн
50+64.13 грн
100+59.33 грн
500+44.18 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STP4LN80K5 en.DM00180753.pdf
STP4LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 800V 3A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 100 V
на замовлення 968 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+162.75 грн
50+76.10 грн
100+68.24 грн
500+51.10 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP78NF55-08 en.DM00312727.pdf
Виробник: STMicroelectronics
Description: MOSFET N-CH 550V TO-220
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STP9N80K5 en.DM00236495.pdf
STP9N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 800V 7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
товару немає в наявності
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STPA001AH en.DM00052126.pdf
STPA001AH
Виробник: STMicroelectronics
Description: IC AMP AB QUAD 50W 27FLEXIWATT
товару немає в наявності
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STPA002OD-4WX en.DM00079491.pdf
STPA002OD-4WX
Виробник: STMicroelectronics
Description: IC AMP AB QUAD 85W 25FLEXIWATT
Packaging: Tube
Features: Mute, Standby
Package / Case: 25-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Voltage - Supply: 6V ~ 18V
Max Output Power x Channels @ Load: 85W x 4 @ 2Ohm
Supplier Device Package: 25-Flexiwatt (Vertical)
товару немає в наявності
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STPA003HSD-48X en.DM00125748.pdf
STPA003HSD-48X
Виробник: STMicroelectronics
Description: IC AMP AB QUAD 85W 27FLEXIWATT
Packaging: Tube
Features: Mute, Short-Circuit and Thermal Protection, Standby
Package / Case: 27-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 6V ~ 18V
Max Output Power x Channels @ Load: 85W x 4 @ 2Ohm
Supplier Device Package: 27-Flexiwatt (Vertical)
товару немає в наявності
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STPA008-48X en.DM00185962.pdf
STPA008-48X
Виробник: STMicroelectronics
Description: IC AMP AB QUAD 50W 27FLEXIWATT
Packaging: Tube
Features: Short-Circuit and Thermal Protection
Package / Case: 27-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Max Output Power x Channels @ Load: 50W x 4 @ 4Ohm
Supplier Device Package: 27-Flexiwatt (Vertical)
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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STPA008-4WX en.DM00185962.pdf
STPA008-4WX
Виробник: STMicroelectronics
Description: IC AMP AB QUAD 50W 25FLEXIWATT
Packaging: Tube
Features: Short-Circuit and Thermal Protection
Package / Case: 25-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Max Output Power x Channels @ Load: 50W x 4 @ 4Ohm
Supplier Device Package: 25-Flexiwatt (Vertical)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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STPS2045CH en.DM00052137.pdf
STPS2045CH
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 45V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: IPAK (TO-251)
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товару немає в наявності
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STPS20L60CTN en.CD00001710.pdf
STPS20L60CTN
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 60V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB Narrow Leads
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
товару немає в наявності
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STPS4045CWY en.CD00285026.pdf
STPS4045CWY
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 45V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1085 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+158.78 грн
10+112.23 грн
100+71.08 грн
500+65.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STPSC20065D en.DM00288636.pdf
STPSC20065D
Виробник: STMicroelectronics
Description: DIODE SIL CARB 650V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+416.79 грн
10+336.76 грн
100+272.40 грн
500+227.24 грн
В кошику  од. на суму  грн.
STPSC20065DI en.DM00288636.pdf
STPSC20065DI
Виробник: STMicroelectronics
Description: DIODE SIC 650V 20A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
на замовлення 926 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+520.00 грн
50+268.66 грн
100+246.28 грн
500+194.37 грн
В кошику  од. на суму  грн.
STPSC20065W en.DM00288636.pdf
STPSC20065W
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 20A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
товару немає в наявності
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STPSC20065WY en.DM00288933.pdf
STPSC20065WY
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 20A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+565.25 грн
30+290.00 грн
120+254.50 грн
В кошику  од. на суму  грн.
STPSC40065CWY en.DM00289060.pdf
STPSC40065CWY
Виробник: STMicroelectronics
Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 207 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+925.68 грн
10+621.61 грн
100+469.30 грн
В кошику  од. на суму  грн.
STTH20P035FP
Виробник: STMicroelectronics
Description: DIODE GEN PURP 350V 20A TO220FP
Packaging: Tube
Part Status: Active
товару немає в наявності
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STTH30AC06FP STTH30AC06_Rev.Feb.23%2C2018_DS.pdf
STTH30AC06FP
Виробник: STMicroelectronics
Description: DIODE STD 600V 30A TO220FPAC
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
на замовлення 1199 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+144.49 грн
50+74.95 грн
100+74.27 грн
500+55.93 грн
1000+51.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STU3LN80K5 en.DM00090304.pdf
STU3LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 800V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: IPAK (TO-251)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V
на замовлення 2991 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+51.60 грн
75+33.19 грн
150+31.86 грн
525+28.99 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
STW20N60M2-EP
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 278mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 787 pF @ 100 V
товару немає в наявності
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STW26N60M2 en.DM00218389.pdf
STW26N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
на замовлення 335 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+265.16 грн
10+176.90 грн
100+128.69 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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