Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (22305) > Сторінка 10 з 372

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без ПДВ
RMB2SHRCG RMB2SHRCG Taiwan Semiconductor Corporation RMB2S%20SERIES_G1708.pdf Description: BRIDGE RECT TO269AA
товар відсутній
RMB2SHRCG RMB2SHRCG Taiwan Semiconductor Corporation RMB2S%20SERIES_G1708.pdf Description: BRIDGE RECT TO269AA
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
RS1A R3G RS1A R3G Taiwan Semiconductor Corporation RS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
RS1A R3G RS1A R3G Taiwan Semiconductor Corporation RS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
RS1AL R3G RS1AL R3G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
RS1AL R3G RS1AL R3G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
RS1AL RVG RS1AL RVG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+11.08 грн
6000+ 10.13 грн
Мінімальне замовлення: 3000
RS1AL RVG RS1AL RVG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 6290 шт:
термін постачання 21-31 дні (днів)
9+32.99 грн
11+ 27.07 грн
100+ 18.82 грн
Мінімальне замовлення: 9
RS1B R3G RS1B R3G Taiwan Semiconductor Corporation RS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
RS1B R3G RS1B R3G Taiwan Semiconductor Corporation RS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 3586 шт:
термін постачання 21-31 дні (днів)
9+34.42 грн
11+ 25.69 грн
100+ 15.4 грн
500+ 13.38 грн
Мінімальне замовлення: 9
RS1BL RVG RS1BL RVG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 100V 800MA SUBSMA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
RS1BL RVG RS1BL RVG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 100V 800MA SUBSMA
на замовлення 11500 шт:
термін постачання 21-31 дні (днів)
RS1D R3G RS1D R3G Taiwan Semiconductor Corporation RS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
RS1DL RVG RS1DL RVG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 200V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
RS1DL RVG RS1DL RVG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 200V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 2695 шт:
термін постачання 21-31 дні (днів)
10+31.56 грн
14+ 21.2 грн
100+ 10.71 грн
500+ 8.2 грн
1000+ 6.08 грн
Мінімальне замовлення: 10
RS1DLW RVG RS1DLW RVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+8.08 грн
Мінімальне замовлення: 3000
RS1DLW RVG RS1DLW RVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 5900 шт:
термін постачання 21-31 дні (днів)
10+30.12 грн
13+ 22.38 грн
100+ 13.43 грн
500+ 11.67 грн
1000+ 7.93 грн
Мінімальне замовлення: 10
RS1DLWHRVG RS1DLWHRVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
RS1DLWHRVG RS1DLWHRVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 1398 шт:
термін постачання 21-31 дні (днів)
10+31.56 грн
13+ 21.48 грн
100+ 10.82 грн
500+ 8.99 грн
1000+ 7 грн
Мінімальне замовлення: 10
RS1G R3G RS1G R3G Taiwan Semiconductor Corporation RS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 262800 шт:
термін постачання 21-31 дні (днів)
1800+9.82 грн
3600+ 8.71 грн
5400+ 8.35 грн
9000+ 7.05 грн
45000+ 6.95 грн
90000+ 6.53 грн
Мінімальне замовлення: 1800
RS1G R3G RS1G R3G Taiwan Semiconductor Corporation RS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 264490 шт:
термін постачання 21-31 дні (днів)
9+33.71 грн
12+ 25.07 грн
100+ 15.03 грн
500+ 13.06 грн
Мінімальне замовлення: 9
RS1GL R3G RS1GL R3G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
RS1GL R3G RS1GL R3G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
RS1GL RS1GL Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+4.33 грн
Мінімальне замовлення: 10000
RS1GL RS1GL Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 20405 шт:
термін постачання 21-31 дні (днів)
10+30.12 грн
14+ 19.96 грн
100+ 10.08 грн
500+ 7.72 грн
1000+ 5.73 грн
2000+ 4.82 грн
5000+ 4.53 грн
Мінімальне замовлення: 10
RS1GLW RVG RS1GLW RVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_A1511.pdf Description: DIODE GEN PURP 400V 1A SOD123W
товар відсутній
RS1GLW RVG RS1GLW RVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_A1511.pdf Description: DIODE GEN PURP 400V 1A SOD123W
на замовлення 4061 шт:
термін постачання 21-31 дні (днів)
9+33.71 грн
11+ 26.52 грн
100+ 18.06 грн
500+ 12.71 грн
1000+ 9.53 грн
Мінімальне замовлення: 9
RS1GLWHRVG RS1GLWHRVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+9.1 грн
6000+ 8.4 грн
Мінімальне замовлення: 3000
RS1GLWHRVG RS1GLWHRVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 8581 шт:
термін постачання 21-31 дні (днів)
9+33.71 грн
11+ 25.21 грн
100+ 15.11 грн
500+ 13.13 грн
1000+ 8.93 грн
Мінімальне замовлення: 9
RS1J R3G RS1J R3G Taiwan Semiconductor Corporation RS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
1800+9.82 грн
3600+ 8.71 грн
5400+ 8.35 грн
Мінімальне замовлення: 1800
RS1J R3G RS1J R3G Taiwan Semiconductor Corporation RS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 8785 шт:
термін постачання 21-31 дні (днів)
9+33.71 грн
12+ 25.07 грн
100+ 15.03 грн
500+ 13.06 грн
Мінімальне замовлення: 9
RS1JL R3G RS1JL R3G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RS1JL R3G RS1JL R3G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 764 шт:
термін постачання 21-31 дні (днів)
10+30.12 грн
12+ 24.38 грн
100+ 16.93 грн
500+ 12.41 грн
Мінімальне замовлення: 10
RS1JL RVG RS1JL RVG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RS1JL RVG RS1JL RVG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
10+29.4 грн
15+ 19.61 грн
Мінімальне замовлення: 10
RS1JLSHRVG RS1JLSHRVG Taiwan Semiconductor Corporation RS1JLS%20SERIES_D2103.pdf Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RS1JLSHRVG RS1JLSHRVG Taiwan Semiconductor Corporation RS1JLS%20SERIES_D2103.pdf Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RS1JLW RVG RS1JLW RVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_A1511.pdf Description: DIODE GEN PURP 600V 1A SOD123W
товар відсутній
RS1JLW RVG RS1JLW RVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_A1511.pdf Description: DIODE GEN PURP 600V 1A SOD123W
на замовлення 2431 шт:
термін постачання 21-31 дні (днів)
10+31.56 грн
13+ 22.65 грн
100+ 14.14 грн
500+ 9.08 грн
1000+ 6.98 грн
Мінімальне замовлення: 10
RS1JLWHRVG RS1JLWHRVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 600V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RS1JLWHRVG RS1JLWHRVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 600V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 1877 шт:
термін постачання 21-31 дні (днів)
10+31.56 грн
13+ 21.69 грн
100+ 10.93 грн
500+ 9.09 грн
1000+ 7.07 грн
Мінімальне замовлення: 10
RS1K R3G RS1K R3G Taiwan Semiconductor Corporation RS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1K R3G RS1K R3G Taiwan Semiconductor Corporation RS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KL R3G RS1KL R3G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KL R3G RS1KL R3G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 800V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 229 шт:
термін постачання 21-31 дні (днів)
9+32.99 грн
11+ 26.93 грн
100+ 20.14 грн
Мінімальне замовлення: 9
RS1KL RVG RS1KL RVG Taiwan Semiconductor Corporation RS1AL SERIES_N2103.pdf Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+5.18 грн
6000+ 4.76 грн
9000+ 4.12 грн
Мінімальне замовлення: 3000
RS1KL RVG RS1KL RVG Taiwan Semiconductor Corporation RS1AL SERIES_N2103.pdf Description: DIODE GP 800V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 23588 шт:
термін постачання 21-31 дні (днів)
10+28.69 грн
15+ 19.41 грн
100+ 9.79 грн
500+ 7.49 грн
1000+ 5.56 грн
Мінімальне замовлення: 10
RS1KLSHRVG RS1KLSHRVG Taiwan Semiconductor Corporation Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KLSHRVG RS1KLSHRVG Taiwan Semiconductor Corporation Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KLW RVG RS1KLW RVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+7.05 грн
6000+ 6.41 грн
Мінімальне замовлення: 3000
RS1KLW RVG RS1KLW RVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 8995 шт:
термін постачання 21-31 дні (днів)
10+31.56 грн
13+ 23 грн
100+ 14.33 грн
500+ 9.2 грн
1000+ 7.08 грн
Мінімальне замовлення: 10
RS1KLWHRVG RS1KLWHRVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KLWHRVG RS1KLWHRVG Taiwan Semiconductor Corporation RS1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1M R3G RS1M R3G Taiwan Semiconductor Corporation RS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
RS1M R3G RS1M R3G Taiwan Semiconductor Corporation RS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
9+33.71 грн
12+ 25.07 грн
Мінімальне замовлення: 9
RS1ML R3G RS1ML R3G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 1KV 800MA SUB SMA
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
1800+12.05 грн
3600+ 10.58 грн
Мінімальне замовлення: 1800
RS1ML R3G RS1ML R3G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 1KV 800MA SUB SMA
на замовлення 5370 шт:
термін постачання 21-31 дні (днів)
10+30.84 грн
11+ 25.55 грн
100+ 19.12 грн
500+ 14.1 грн
Мінімальне замовлення: 10
RS1ML RVG RS1ML RVG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 1KV 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
RS1ML RVG RS1ML RVG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 1KV 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
RS1MLS RVG RS1MLS RVG Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1KV 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
RMB2SHRCG RMB2S%20SERIES_G1708.pdf
RMB2SHRCG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT TO269AA
товар відсутній
RMB2SHRCG RMB2S%20SERIES_G1708.pdf
RMB2SHRCG
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT TO269AA
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
RS1A R3G RS1A%20SERIES_L2102.pdf
RS1A R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
RS1A R3G RS1A%20SERIES_L2102.pdf
RS1A R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
RS1AL R3G RS1AL%20SERIES_N2103.pdf
RS1AL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
RS1AL R3G RS1AL%20SERIES_N2103.pdf
RS1AL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
RS1AL RVG RS1AL%20SERIES_N2103.pdf
RS1AL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+11.08 грн
6000+ 10.13 грн
Мінімальне замовлення: 3000
RS1AL RVG RS1AL%20SERIES_N2103.pdf
RS1AL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 6290 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+32.99 грн
11+ 27.07 грн
100+ 18.82 грн
Мінімальне замовлення: 9
RS1B R3G RS1A%20SERIES_L2102.pdf
RS1B R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
RS1B R3G RS1A%20SERIES_L2102.pdf
RS1B R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 3586 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+34.42 грн
11+ 25.69 грн
100+ 15.4 грн
500+ 13.38 грн
Мінімальне замовлення: 9
RS1BL RVG RS1AL%20SERIES_N2103.pdf
RS1BL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
RS1BL RVG RS1AL%20SERIES_N2103.pdf
RS1BL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 800MA SUBSMA
на замовлення 11500 шт:
термін постачання 21-31 дні (днів)
RS1D R3G RS1A%20SERIES_L2102.pdf
RS1D R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
RS1DL RVG RS1AL%20SERIES_N2103.pdf
RS1DL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 200V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
RS1DL RVG RS1AL%20SERIES_N2103.pdf
RS1DL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 200V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 2695 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.56 грн
14+ 21.2 грн
100+ 10.71 грн
500+ 8.2 грн
1000+ 6.08 грн
Мінімальне замовлення: 10
RS1DLW RVG RS1DLW%20SERIES_C2103.pdf
RS1DLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+8.08 грн
Мінімальне замовлення: 3000
RS1DLW RVG RS1DLW%20SERIES_C2103.pdf
RS1DLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 5900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.12 грн
13+ 22.38 грн
100+ 13.43 грн
500+ 11.67 грн
1000+ 7.93 грн
Мінімальне замовлення: 10
RS1DLWHRVG RS1DLW%20SERIES_C2103.pdf
RS1DLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
RS1DLWHRVG RS1DLW%20SERIES_C2103.pdf
RS1DLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 1398 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.56 грн
13+ 21.48 грн
100+ 10.82 грн
500+ 8.99 грн
1000+ 7 грн
Мінімальне замовлення: 10
RS1G R3G RS1A%20SERIES_L2102.pdf
RS1G R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 262800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1800+9.82 грн
3600+ 8.71 грн
5400+ 8.35 грн
9000+ 7.05 грн
45000+ 6.95 грн
90000+ 6.53 грн
Мінімальне замовлення: 1800
RS1G R3G RS1A%20SERIES_L2102.pdf
RS1G R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 264490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+33.71 грн
12+ 25.07 грн
100+ 15.03 грн
500+ 13.06 грн
Мінімальне замовлення: 9
RS1GL R3G RS1AL%20SERIES_N2103.pdf
RS1GL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
RS1GL R3G RS1AL%20SERIES_N2103.pdf
RS1GL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
RS1GL RS1AL%20SERIES_N2103.pdf
RS1GL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+4.33 грн
Мінімальне замовлення: 10000
RS1GL RS1AL%20SERIES_N2103.pdf
RS1GL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 20405 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.12 грн
14+ 19.96 грн
100+ 10.08 грн
500+ 7.72 грн
1000+ 5.73 грн
2000+ 4.82 грн
5000+ 4.53 грн
Мінімальне замовлення: 10
RS1GLW RVG RS1DLW%20SERIES_A1511.pdf
RS1GLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123W
товар відсутній
RS1GLW RVG RS1DLW%20SERIES_A1511.pdf
RS1GLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123W
на замовлення 4061 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+33.71 грн
11+ 26.52 грн
100+ 18.06 грн
500+ 12.71 грн
1000+ 9.53 грн
Мінімальне замовлення: 9
RS1GLWHRVG RS1DLW%20SERIES_C2103.pdf
RS1GLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+9.1 грн
6000+ 8.4 грн
Мінімальне замовлення: 3000
RS1GLWHRVG RS1DLW%20SERIES_C2103.pdf
RS1GLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 8581 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+33.71 грн
11+ 25.21 грн
100+ 15.11 грн
500+ 13.13 грн
1000+ 8.93 грн
Мінімальне замовлення: 9
RS1J R3G RS1A%20SERIES_L2102.pdf
RS1J R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1800+9.82 грн
3600+ 8.71 грн
5400+ 8.35 грн
Мінімальне замовлення: 1800
RS1J R3G RS1A%20SERIES_L2102.pdf
RS1J R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 8785 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+33.71 грн
12+ 25.07 грн
100+ 15.03 грн
500+ 13.06 грн
Мінімальне замовлення: 9
RS1JL R3G RS1AL%20SERIES_N2103.pdf
RS1JL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RS1JL R3G RS1AL%20SERIES_N2103.pdf
RS1JL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 764 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.12 грн
12+ 24.38 грн
100+ 16.93 грн
500+ 12.41 грн
Мінімальне замовлення: 10
RS1JL RVG RS1AL%20SERIES_N2103.pdf
RS1JL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RS1JL RVG RS1AL%20SERIES_N2103.pdf
RS1JL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+29.4 грн
15+ 19.61 грн
Мінімальне замовлення: 10
RS1JLSHRVG RS1JLS%20SERIES_D2103.pdf
RS1JLSHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RS1JLSHRVG RS1JLS%20SERIES_D2103.pdf
RS1JLSHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RS1JLW RVG RS1DLW%20SERIES_A1511.pdf
RS1JLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123W
товар відсутній
RS1JLW RVG RS1DLW%20SERIES_A1511.pdf
RS1JLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123W
на замовлення 2431 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.56 грн
13+ 22.65 грн
100+ 14.14 грн
500+ 9.08 грн
1000+ 6.98 грн
Мінімальне замовлення: 10
RS1JLWHRVG RS1DLW%20SERIES_C2103.pdf
RS1JLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
RS1JLWHRVG RS1DLW%20SERIES_C2103.pdf
RS1JLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 1877 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.56 грн
13+ 21.69 грн
100+ 10.93 грн
500+ 9.09 грн
1000+ 7.07 грн
Мінімальне замовлення: 10
RS1K R3G RS1A%20SERIES_L2102.pdf
RS1K R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1K R3G RS1A%20SERIES_L2102.pdf
RS1K R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KL R3G RS1AL%20SERIES_N2103.pdf
RS1KL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KL R3G RS1AL%20SERIES_N2103.pdf
RS1KL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 229 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+32.99 грн
11+ 26.93 грн
100+ 20.14 грн
Мінімальне замовлення: 9
RS1KL RVG RS1AL SERIES_N2103.pdf
RS1KL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+5.18 грн
6000+ 4.76 грн
9000+ 4.12 грн
Мінімальне замовлення: 3000
RS1KL RVG RS1AL SERIES_N2103.pdf
RS1KL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 23588 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+28.69 грн
15+ 19.41 грн
100+ 9.79 грн
500+ 7.49 грн
1000+ 5.56 грн
Мінімальне замовлення: 10
RS1KLSHRVG
RS1KLSHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KLSHRVG
RS1KLSHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KLW RVG RS1DLW%20SERIES_C2103.pdf
RS1KLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+7.05 грн
6000+ 6.41 грн
Мінімальне замовлення: 3000
RS1KLW RVG RS1DLW%20SERIES_C2103.pdf
RS1KLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 8995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.56 грн
13+ 23 грн
100+ 14.33 грн
500+ 9.2 грн
1000+ 7.08 грн
Мінімальне замовлення: 10
RS1KLWHRVG RS1DLW%20SERIES_C2103.pdf
RS1KLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1KLWHRVG RS1DLW%20SERIES_C2103.pdf
RS1KLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
RS1M R3G RS1A%20SERIES_L2102.pdf
RS1M R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
RS1M R3G RS1A%20SERIES_L2102.pdf
RS1M R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+33.71 грн
12+ 25.07 грн
Мінімальне замовлення: 9
RS1ML R3G RS1AL%20SERIES_N2103.pdf
RS1ML R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 800MA SUB SMA
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1800+12.05 грн
3600+ 10.58 грн
Мінімальне замовлення: 1800
RS1ML R3G RS1AL%20SERIES_N2103.pdf
RS1ML R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 800MA SUB SMA
на замовлення 5370 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.84 грн
11+ 25.55 грн
100+ 19.12 грн
500+ 14.1 грн
Мінімальне замовлення: 10
RS1ML RVG RS1AL%20SERIES_N2103.pdf
RS1ML RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
RS1ML RVG RS1AL%20SERIES_N2103.pdf
RS1ML RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
RS1MLS RVG
RS1MLS RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
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