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ES1BL R3G ES1BL R3G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 100V 1A SUB SMA
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
6+56.31 грн
10+46.01 грн
100+34.36 грн
500+25.34 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
ES1CL RVG ES1CL RVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
3000+17.74 грн
6000+15.88 грн
9000+15.26 грн
15000+14.29 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ES1CL RVG ES1CL RVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 150V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
на замовлення 54342 шт:
термін постачання 21-31 дні (днів)
5+78.66 грн
10+47.36 грн
100+30.91 грн
500+22.36 грн
1000+20.21 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ES1D R3G ES1D R3G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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ES1D R3G ES1D R3G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ES1DL R3G ES1DL R3G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
товару немає в наявності
В кошику  од. на суму  грн.
ES1DL R3G ES1DL R3G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
на замовлення 788 шт:
термін постачання 21-31 дні (днів)
7+54.65 грн
10+45.21 грн
100+33.72 грн
500+24.86 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
ES1DL RVG ES1DL RVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
товару немає в наявності
В кошику  од. на суму  грн.
ES1DL RVG ES1DL RVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
на замовлення 2800 шт:
термін постачання 21-31 дні (днів)
9+38.92 грн
12+28.23 грн
100+17.59 грн
500+11.29 грн
1000+8.69 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ES1DLW RVG ES1DLW RVG Taiwan Semiconductor Corporation ES1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
товару немає в наявності
В кошику  од. на суму  грн.
ES1DLW RVG ES1DLW RVG Taiwan Semiconductor Corporation ES1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
на замовлення 87 шт:
термін постачання 21-31 дні (днів)
9+38.92 грн
11+31.58 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ES1DLWHRVG ES1DLWHRVG Taiwan Semiconductor Corporation ES1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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ES1DLWHRVG ES1DLWHRVG Taiwan Semiconductor Corporation ES1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 241 шт:
термін постачання 21-31 дні (днів)
10+36.43 грн
11+29.90 грн
100+22.33 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ES1FL R3G ES1FL R3G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товару немає в наявності
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ES1G R3G ES1G R3G Taiwan Semiconductor Corporation ES1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 400V 1A DO214AC
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ES1G R3G ES1G R3G Taiwan Semiconductor Corporation ES1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 400V 1A DO214AC
на замовлення 7301 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ES1GL R3G ES1GL R3G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ES1GL R3G ES1GL R3G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
на замовлення 3485 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ES1GL RVG ES1GL RVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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ES1GL RVG ES1GL RVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)
12+28.98 грн
15+21.69 грн
100+13.02 грн
500+11.31 грн
1000+7.69 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
ES1GLW RVG ES1GLW RVG Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+14.88 грн
6000+13.60 грн
9000+12.63 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ES1GLW RVG ES1GLW RVG Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 17078 шт:
термін постачання 21-31 дні (днів)
8+44.71 грн
10+36.28 грн
100+25.25 грн
500+18.51 грн
1000+15.04 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
ES1GLWHRVG ES1GLWHRVG Taiwan Semiconductor Corporation ES1DLW%20SERIES_B1812.pdf Description: DIODE GEN PURP 400V 1A SOD123W
товару немає в наявності
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ES1GLWHRVG ES1GLWHRVG Taiwan Semiconductor Corporation ES1DLW%20SERIES_B1812.pdf Description: DIODE GEN PURP 400V 1A SOD123W
товару немає в наявності
В кошику  од. на суму  грн.
ES1HL R3G ES1HL R3G Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 500V 1A SUB SMA
товару немає в наявності
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ES1HL R3G ES1HL R3G Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 500V 1A SUB SMA
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
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ES1J R3G ES1J R3G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
товару немає в наявності
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ES1JF R3G Taiwan Semiconductor Corporation Description: DIODE STANDARD 600V 1A SMAFL
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA-FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
товару немає в наявності
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ES1JFL RVG ES1JFL RVG Taiwan Semiconductor Corporation ES1DFL%20SERIES_D2103.pdf Description: DIODE GEN PURP 600V 1A SOD123FL
товару немає в наявності
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ES1JFL RVG ES1JFL RVG Taiwan Semiconductor Corporation ES1DFL%20SERIES_D2103.pdf Description: DIODE GEN PURP 600V 1A SOD123FL
товару немає в наявності
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ES1JL R3G ES1JL R3G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
товару немає в наявності
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ES1JL R3G ES1JL R3G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
товару немає в наявності
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ES1JL RVG ES1JL RVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
товару немає в наявності
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ES1JL RVG ES1JL RVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
на замовлення 285 шт:
термін постачання 21-31 дні (днів)
8+43.06 грн
11+31.42 грн
100+19.56 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
ES1JLWHRVG ES1JLWHRVG Taiwan Semiconductor Corporation ES1DLWSERIESC2103.pdf Description: DIODE STANDARD 600V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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ES2B R5G ES2B R5G Taiwan Semiconductor Corporation ES2A%20-%20ES2J.pdf Description: DIODE STANDARD 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
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ES2BA R3G ES2BA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE STANDARD 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
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ES2C R5G ES2C R5G Taiwan Semiconductor Corporation ES2A%20-%20ES2J.pdf Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товару немає в наявності
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ES2C R5G ES2C R5G Taiwan Semiconductor Corporation ES2A%20-%20ES2J.pdf Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
5+73.70 грн
10+47.28 грн
Мінімальне замовлення: 5
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ES2CA R3G ES2CA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 150V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товару немає в наявності
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ES2CA R3G ES2CA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 150V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товару немає в наявності
В кошику  од. на суму  грн.
ES2D R5G ES2D R5G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
ES2D R5G ES2D R5G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
ES2DA R3G ES2DA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE STANDARD 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
ES2DA R3G ES2DA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE STANDARD 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 986 шт:
термін постачання 21-31 дні (днів)
8+43.89 грн
12+28.07 грн
100+22.10 грн
500+15.79 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
ES2DAHR3G ES2DAHR3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
ES2DAHR3G ES2DAHR3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
ES2FA R3G ES2FA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE STANDARD 300V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товару немає в наявності
В кошику  од. на суму  грн.
ES2FAHR3G ES2FAHR3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE STANDARD 300V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товару немає в наявності
В кошику  од. на суму  грн.
ES2G R5G ES2G R5G Taiwan Semiconductor Corporation ES2A%20-%20ES2J.pdf Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
ES2G R5G ES2G R5G Taiwan Semiconductor Corporation ES2A%20-%20ES2J.pdf Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 854 шт:
термін постачання 21-31 дні (днів)
7+50.51 грн
10+32.53 грн
100+22.18 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
ES2GA R3G ES2GA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE STANDARD 400V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
ES2GA R3G ES2GA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE STANDARD 400V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
ES3D R7G ES3D R7G Taiwan Semiconductor Corporation ES3A%20SERIES_N2102.pdf Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
ES3D R7G ES3D R7G Taiwan Semiconductor Corporation ES3A%20SERIES_N2102.pdf Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
ES3DB R5G ES3DB R5G Taiwan Semiconductor Corporation ES3AB%20SERIES_C2102.pdf Description: DIODE STANDARD 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
ES3DB R5G ES3DB R5G Taiwan Semiconductor Corporation ES3AB%20SERIES_C2102.pdf Description: DIODE STANDARD 200V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ES3DBHR5G ES3DBHR5G Taiwan Semiconductor Corporation ES3AB%20SERIES_C2102.pdf Description: DIODE STANDARD 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
ES3DBHR5G ES3DBHR5G Taiwan Semiconductor Corporation ES3AB%20SERIES_C2102.pdf Description: DIODE STANDARD 200V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
на замовлення 82 шт:
термін постачання 21-31 дні (днів)
5+67.90 грн
10+43.78 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ES3FB R5G ES3FB R5G Taiwan Semiconductor Corporation ES3AB%20SERIES_B1706.pdf Description: DIODE GEN PURP 300V 3A DO214AA
на замовлення 1193 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ES1BL R3G ES1AL%20SERIES_L2103.pdf
ES1BL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SUB SMA
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+56.31 грн
10+46.01 грн
100+34.36 грн
500+25.34 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
ES1CL RVG ES1AL%20SERIES_L2103.pdf
ES1CL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+17.74 грн
6000+15.88 грн
9000+15.26 грн
15000+14.29 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ES1CL RVG ES1AL%20SERIES_L2103.pdf
ES1CL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
на замовлення 54342 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+78.66 грн
10+47.36 грн
100+30.91 грн
500+22.36 грн
1000+20.21 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ES1D R3G ES1A%20SERIES_O2112.pdf
ES1D R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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ES1D R3G ES1A%20SERIES_O2112.pdf
ES1D R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ES1DL R3G ES1AL%20SERIES_L2103.pdf
ES1DL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
товару немає в наявності
В кошику  од. на суму  грн.
ES1DL R3G ES1AL%20SERIES_L2103.pdf
ES1DL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
на замовлення 788 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+54.65 грн
10+45.21 грн
100+33.72 грн
500+24.86 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
ES1DL RVG ES1AL%20SERIES_L2103.pdf
ES1DL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
товару немає в наявності
В кошику  од. на суму  грн.
ES1DL RVG ES1AL%20SERIES_L2103.pdf
ES1DL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
на замовлення 2800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.92 грн
12+28.23 грн
100+17.59 грн
500+11.29 грн
1000+8.69 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ES1DLW RVG ES1DLW%20SERIES_C2103.pdf
ES1DLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
товару немає в наявності
В кошику  од. на суму  грн.
ES1DLW RVG ES1DLW%20SERIES_C2103.pdf
ES1DLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
на замовлення 87 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.92 грн
11+31.58 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ES1DLWHRVG ES1DLW%20SERIES_C2103.pdf
ES1DLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ES1DLWHRVG ES1DLW%20SERIES_C2103.pdf
ES1DLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 241 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+36.43 грн
11+29.90 грн
100+22.33 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ES1FL R3G ES1AL%20SERIES_L2103.pdf
ES1FL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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ES1G R3G ES1A%20SERIES_N2102.pdf
ES1G R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ES1G R3G ES1A%20SERIES_N2102.pdf
ES1G R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
на замовлення 7301 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ES1GL R3G ES1AL%20SERIES_L2103.pdf
ES1GL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ES1GL R3G ES1AL%20SERIES_L2103.pdf
ES1GL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
на замовлення 3485 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ES1GL RVG ES1AL%20SERIES_L2103.pdf
ES1GL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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ES1GL RVG ES1AL%20SERIES_L2103.pdf
ES1GL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+28.98 грн
15+21.69 грн
100+13.02 грн
500+11.31 грн
1000+7.69 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
ES1GLW RVG
ES1GLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+14.88 грн
6000+13.60 грн
9000+12.63 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ES1GLW RVG
ES1GLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 17078 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.71 грн
10+36.28 грн
100+25.25 грн
500+18.51 грн
1000+15.04 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
ES1GLWHRVG ES1DLW%20SERIES_B1812.pdf
ES1GLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123W
товару немає в наявності
В кошику  од. на суму  грн.
ES1GLWHRVG ES1DLW%20SERIES_B1812.pdf
ES1GLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123W
товару немає в наявності
В кошику  од. на суму  грн.
ES1HL R3G ES1AL%20SERIES_K15.pdf
ES1HL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 1A SUB SMA
товару немає в наявності
В кошику  од. на суму  грн.
ES1HL R3G ES1AL%20SERIES_K15.pdf
ES1HL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 1A SUB SMA
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
ES1J R3G ES1A%20SERIES_O2112.pdf
ES1J R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
товару немає в наявності
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ES1JF R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SMAFL
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA-FL
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
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ES1JFL RVG ES1DFL%20SERIES_D2103.pdf
ES1JFL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123FL
товару немає в наявності
В кошику  од. на суму  грн.
ES1JFL RVG ES1DFL%20SERIES_D2103.pdf
ES1JFL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123FL
товару немає в наявності
В кошику  од. на суму  грн.
ES1JL R3G ES1AL%20SERIES_L2103.pdf
ES1JL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
товару немає в наявності
В кошику  од. на суму  грн.
ES1JL R3G ES1AL%20SERIES_L2103.pdf
ES1JL R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
товару немає в наявності
В кошику  од. на суму  грн.
ES1JL RVG ES1AL%20SERIES_L2103.pdf
ES1JL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
товару немає в наявності
В кошику  од. на суму  грн.
ES1JL RVG ES1AL%20SERIES_L2103.pdf
ES1JL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
на замовлення 285 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+43.06 грн
11+31.42 грн
100+19.56 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
ES1JLWHRVG ES1DLWSERIESC2103.pdf
ES1JLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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ES2B R5G ES2A%20-%20ES2J.pdf
ES2B R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
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ES2BA R3G ES2AA%20SERIES_M2102.pdf
ES2BA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
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ES2C R5G ES2A%20-%20ES2J.pdf
ES2C R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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ES2C R5G ES2A%20-%20ES2J.pdf
ES2C R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+73.70 грн
10+47.28 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ES2CA R3G ES2AA%20SERIES_M2102.pdf
ES2CA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товару немає в наявності
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ES2CA R3G ES2AA%20SERIES_M2102.pdf
ES2CA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товару немає в наявності
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ES2D R5G ES2A%20SERIES_L2102.pdf
ES2D R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
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ES2D R5G ES2A%20SERIES_L2102.pdf
ES2D R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
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ES2DA R3G ES2AA%20SERIES_M2102.pdf
ES2DA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
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ES2DA R3G ES2AA%20SERIES_M2102.pdf
ES2DA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 986 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+43.89 грн
12+28.07 грн
100+22.10 грн
500+15.79 грн
Мінімальне замовлення: 8
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ES2DAHR3G ES2AA%20SERIES_M2102.pdf
ES2DAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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ES2DAHR3G ES2AA%20SERIES_M2102.pdf
ES2DAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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ES2FA R3G ES2AA%20SERIES_M2102.pdf
ES2FA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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ES2FAHR3G ES2AA%20SERIES_M2102.pdf
ES2FAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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ES2G R5G ES2A%20-%20ES2J.pdf
ES2G R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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ES2G R5G ES2A%20-%20ES2J.pdf
ES2G R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 854 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.51 грн
10+32.53 грн
100+22.18 грн
Мінімальне замовлення: 7
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ES2GA R3G ES2AA%20SERIES_M2102.pdf
ES2GA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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ES2GA R3G ES2AA%20SERIES_M2102.pdf
ES2GA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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ES3D R7G ES3A%20SERIES_N2102.pdf
ES3D R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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ES3D R7G ES3A%20SERIES_N2102.pdf
ES3D R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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ES3DB R5G ES3AB%20SERIES_C2102.pdf
ES3DB R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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ES3DB R5G ES3AB%20SERIES_C2102.pdf
ES3DB R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
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ES3DBHR5G ES3AB%20SERIES_C2102.pdf
ES3DBHR5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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ES3DBHR5G ES3AB%20SERIES_C2102.pdf
ES3DBHR5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
на замовлення 82 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+67.90 грн
10+43.78 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ES3FB R5G ES3AB%20SERIES_B1706.pdf
ES3FB R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO214AA
на замовлення 1193 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
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