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TS78L15CT B0G TS78L15CT B0G Taiwan Semiconductor Corporation TS78L00_M2206.pdf Description: IC REG LINEAR 15V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6.6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 15V
Control Features: Current Limit
PSRR: 39dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
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S3JBHR5G S3JBHR5G Taiwan Semiconductor Corporation S3AB%20SERIES_M2102.pdf Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)
850+28.42 грн
1700+21.90 грн
2550+19.84 грн
Мінімальне замовлення: 850
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S3JBHR5G S3JBHR5G Taiwan Semiconductor Corporation S3AB%20SERIES_M2102.pdf Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 4250 шт:
термін постачання 21-31 дні (днів)
7+53.19 грн
10+45.15 грн
100+34.63 грн
Мінімальне замовлення: 7
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S12KC R7G S12KC R7G Taiwan Semiconductor Corporation S12GCH%20SERIES_A2102.pdf Description: DIODE GEN PURP 800V 12A DO214AB
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S12KC R7G S12KC R7G Taiwan Semiconductor Corporation S12GCH%20SERIES_A2102.pdf Description: DIODE GEN PURP 800V 12A DO214AB
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
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SS34HR7G SS34HR7G Taiwan Semiconductor Corporation SS32%20-%20SS320.pdf Description: DIODE STANDARD 40V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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SS34 M6G SS34 M6G Taiwan Semiconductor Corporation SS32%20-%20SS320.pdf Description: DIODE STANDARD 40V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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SS34HM6G SS34HM6G Taiwan Semiconductor Corporation SS32%20-%20SS320.pdf Description: DIODE STANDARD 40V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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SS36 V7G SS36 V7G Taiwan Semiconductor Corporation SS32%20SERIES_O2102.pdf Description: DIODE SCHOTTKY 3A 60V DO-214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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SS36 V6G SS36 V6G Taiwan Semiconductor Corporation SS32%20SERIES_N1903.pdf Description: DIODE SCHOTTKY 3A 60V DO-214AB
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SS36 M6G SS36 M6G Taiwan Semiconductor Corporation SS32%20-%20SS320.pdf Description: DIODE STANDARD 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SS36HM6G SS36HM6G Taiwan Semiconductor Corporation SS32%20SERIES_P2312.pdf Description: DIODE GEN PURP 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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P6SMB33A M4G P6SMB33A M4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 28.2VWM 45.7VC DO214AA
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P6SMB33AHM4G P6SMB33AHM4G Taiwan Semiconductor Corporation P6SMB%20SERIES_P2102.pdf Description: TVS DIODE 28.2VWM 45.7VC DO214AA
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P6SMB33A R5G P6SMB33A R5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 28.2VWM 45.7VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.8A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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P6SMB33AHR5G P6SMB33AHR5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 28.2VWM 45.7VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 13.8A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
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1KSMB33A R5G 1KSMB33A R5G Taiwan Semiconductor Corporation 1KSMB SERIES_A2102.pdf Description: TVS DIODE 28.2VWM 45.7VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.9A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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1KSMB33AHM4G 1KSMB33AHM4G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 28.2V 45.7V DO214AA
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1KSMB33CA R5G 1KSMB33CA R5G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 28.2V 45.7V DO214AA
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1KSMB33CAHM4G 1KSMB33CAHM4G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 28.2V 45.7V DO214AA
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1KSMB33CAHR5G 1KSMB33CAHR5G Taiwan Semiconductor Corporation 1KSMB SERIES_H1902.pdf Description: TVS DIODE 28.2V 45.7V DO214AA
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TSM4946DCS RLG TSM4946DCS RLG Taiwan Semiconductor Corporation TSM4946DCS_C2303.pdf Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 24V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+23.21 грн
5000+19.54 грн
7500+19.47 грн
Мінімальне замовлення: 2500
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TSM4946DCS RLG TSM4946DCS RLG Taiwan Semiconductor Corporation TSM4946DCS_C2303.pdf Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 24V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 14647 шт:
термін постачання 21-31 дні (днів)
4+89.19 грн
10+53.97 грн
100+35.55 грн
500+25.95 грн
1000+23.56 грн
Мінімальне замовлення: 4
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TSM4925DCS RLG TSM4925DCS RLG Taiwan Semiconductor Corporation TSM4925D_B15.pdf Description: MOSFET 2 P-CH 30V 7.1A 8SOP
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TSM4925DCS RLG TSM4925DCS RLG Taiwan Semiconductor Corporation TSM4925D_B15.pdf Description: MOSFET 2 P-CH 30V 7.1A 8SOP
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TLD5S40AH TLD5S40AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 40VWM 64.5VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 56A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S40AH TLD5S40AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 40VWM 64.5VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 56A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S43AH TLD5S43AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 43VWM 69.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 52A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S43AH TLD5S43AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 43VWM 69.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 52A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ES1DLHM2G ES1DLHM2G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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ES1DLHRQG ES1DLHRQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
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ES1DL RUG ES1DL RUG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ES1DLHR3G ES1DLHR3G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ES1DLHRUG ES1DLHRUG Taiwan Semiconductor Corporation ES1AL SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ES1DL RHG ES1DL RHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
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ES1DLHRHG ES1DLHRHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ES1DL MHG ES1DL MHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ES1DLHMHG ES1DLHMHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
товару немає в наявності
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ES1DL MQG ES1DL MQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ES1DL MTG ES1DL MTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
товару немає в наявності
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ES1DL RTG ES1DL RTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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ES1DLHMQG ES1DLHMQG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
товару немає в наявності
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ES1DLHMTG ES1DLHMTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
товару немає в наявності
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ES1DLHRTG ES1DLHRTG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
товару немає в наявності
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ES1DL RFG ES1DL RFG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
товару немає в наявності
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ES1DLHRFG ES1DLHRFG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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ES1DLHRVG ES1DLHRVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
товару немає в наявності
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5.0SMDJ54A M6G 5.0SMDJ54A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 54VWM 87.1VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
5.0SMDJ54A M6G 5.0SMDJ54A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 54VWM 87.1VC DO214AB
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
5.0SMDJ20A M6G 5.0SMDJ20A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_D2102.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
5.0SMDJ20A M6G 5.0SMDJ20A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_D2102.pdf Description: TVS DIODE 20VWM 32.4VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
5.0SMDJ24A M6G 5.0SMDJ24A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 24V 38.9V DO214AB
товару немає в наявності
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5.0SMDJ24A M6G 5.0SMDJ24A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 24V 38.9V DO214AB
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
5.0SMDJ28A M6G 5.0SMDJ28A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 28V 45.4V DO214AB
товару немає в наявності
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5.0SMDJ28A M6G 5.0SMDJ28A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 28V 45.4V DO214AB
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
5.0SMDJ36A M6G 5.0SMDJ36A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 36V 58.1V DO214AB
товару немає в наявності
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5.0SMDJ36A M6G 5.0SMDJ36A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 36V 58.1V DO214AB
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
5.0SMDJ43A M6G 5.0SMDJ43A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 43V 69.4V DO214AB
товару немає в наявності
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5.0SMDJ43A M6G 5.0SMDJ43A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 43V 69.4V DO214AB
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
5.0SMDJ26A M6G 5.0SMDJ26A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 26V 42.1V DO214AB
товару немає в наявності
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TS78L15CT B0G TS78L00_M2206.pdf
TS78L15CT B0G
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 15V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6.6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 15V
Control Features: Current Limit
PSRR: 39dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
товару немає в наявності
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S3JBHR5G S3AB%20SERIES_M2102.pdf
S3JBHR5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
850+28.42 грн
1700+21.90 грн
2550+19.84 грн
Мінімальне замовлення: 850
В кошику  од. на суму  грн.
S3JBHR5G S3AB%20SERIES_M2102.pdf
S3JBHR5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 4250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+53.19 грн
10+45.15 грн
100+34.63 грн
Мінімальне замовлення: 7
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S12KC R7G S12GCH%20SERIES_A2102.pdf
S12KC R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 12A DO214AB
товару немає в наявності
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S12KC R7G S12GCH%20SERIES_A2102.pdf
S12KC R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 12A DO214AB
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
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SS34HR7G SS32%20-%20SS320.pdf
SS34HR7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 40V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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SS34 M6G SS32%20-%20SS320.pdf
SS34 M6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 40V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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SS34HM6G SS32%20-%20SS320.pdf
SS34HM6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 40V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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SS36 V7G SS32%20SERIES_O2102.pdf
SS36 V7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 3A 60V DO-214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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SS36 V6G SS32%20SERIES_N1903.pdf
SS36 V6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 3A 60V DO-214AB
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SS36 M6G SS32%20-%20SS320.pdf
SS36 M6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SS36HM6G SS32%20SERIES_P2312.pdf
SS36HM6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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P6SMB33A M4G P6SMB%20SERIES_P2102.pdf
P6SMB33A M4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO214AA
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P6SMB33AHM4G P6SMB%20SERIES_P2102.pdf
P6SMB33AHM4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO214AA
товару немає в наявності
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P6SMB33A R5G P6SMB%20SERIES_Q2209.pdf
P6SMB33A R5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.8A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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P6SMB33AHR5G P6SMB%20SERIES_Q2209.pdf
P6SMB33AHR5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 13.8A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
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1KSMB33A R5G 1KSMB SERIES_A2102.pdf
1KSMB33A R5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.9A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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1KSMB33AHM4G 1KSMB SERIES_H1902.pdf
1KSMB33AHM4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2V 45.7V DO214AA
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1KSMB33CA R5G 1KSMB SERIES_H1902.pdf
1KSMB33CA R5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2V 45.7V DO214AA
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1KSMB33CAHM4G 1KSMB SERIES_H1902.pdf
1KSMB33CAHM4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2V 45.7V DO214AA
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1KSMB33CAHR5G 1KSMB SERIES_H1902.pdf
1KSMB33CAHR5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2V 45.7V DO214AA
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TSM4946DCS RLG TSM4946DCS_C2303.pdf
TSM4946DCS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 24V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+23.21 грн
5000+19.54 грн
7500+19.47 грн
Мінімальне замовлення: 2500
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TSM4946DCS RLG TSM4946DCS_C2303.pdf
TSM4946DCS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 24V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 14647 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.19 грн
10+53.97 грн
100+35.55 грн
500+25.95 грн
1000+23.56 грн
Мінімальне замовлення: 4
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TSM4925DCS RLG TSM4925D_B15.pdf
TSM4925DCS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2 P-CH 30V 7.1A 8SOP
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TSM4925DCS RLG TSM4925D_B15.pdf
TSM4925DCS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2 P-CH 30V 7.1A 8SOP
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TLD5S40AH TLD5S10AH SERIES_D2103.pdf
TLD5S40AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40VWM 64.5VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 56A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S40AH TLD5S10AH SERIES_D2103.pdf
TLD5S40AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40VWM 64.5VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 56A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S43AH TLD5S10AH SERIES_D2103.pdf
TLD5S43AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43VWM 69.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 52A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S43AH TLD5S10AH SERIES_D2103.pdf
TLD5S43AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43VWM 69.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 52A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ES1DLHM2G ES1AL%20SERIES_L2103.pdf
ES1DLHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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ES1DLHRQG ES1AL%20SERIES_L2103.pdf
ES1DLHRQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
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ES1DL RUG ES1AL%20SERIES_L2103.pdf
ES1DL RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ES1DLHR3G ES1AL%20SERIES_L2103.pdf
ES1DLHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ES1DLHRUG ES1AL SERIES_L2103.pdf
ES1DLHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ES1DL RHG ES1AL%20SERIES_L2103.pdf
ES1DL RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
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ES1DLHRHG ES1AL%20SERIES_L2103.pdf
ES1DLHRHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ES1DL MHG ES1AL%20SERIES_L2103.pdf
ES1DL MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ES1DLHMHG ES1AL%20SERIES_L2103.pdf
ES1DLHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
товару немає в наявності
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ES1DL MQG ES1AL%20SERIES_L2103.pdf
ES1DL MQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ES1DL MTG ES1AL%20SERIES_L2103.pdf
ES1DL MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
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ES1DL RTG ES1AL%20SERIES_L2103.pdf
ES1DL RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ES1DLHMQG ES1AL%20SERIES_L2103.pdf
ES1DLHMQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
товару немає в наявності
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ES1DLHMTG ES1AL%20SERIES_L2103.pdf
ES1DLHMTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
товару немає в наявності
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ES1DLHRTG ES1AL%20SERIES_L2103.pdf
ES1DLHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
товару немає в наявності
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ES1DL RFG ES1AL%20SERIES_L2103.pdf
ES1DL RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
товару немає в наявності
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ES1DLHRFG ES1AL%20SERIES_L2103.pdf
ES1DLHRFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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ES1DLHRVG ES1AL%20SERIES_L2103.pdf
ES1DLHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
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5.0SMDJ54A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ54A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
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5.0SMDJ54A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ54A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AB
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)
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5.0SMDJ20A M6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ20A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
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5.0SMDJ20A M6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ20A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
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5.0SMDJ24A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ24A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24V 38.9V DO214AB
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5.0SMDJ24A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ24A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24V 38.9V DO214AB
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
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5.0SMDJ28A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ28A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
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5.0SMDJ28A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ28A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
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5.0SMDJ36A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ36A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AB
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5.0SMDJ36A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ36A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AB
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
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5.0SMDJ43A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ43A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43V 69.4V DO214AB
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5.0SMDJ43A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ43A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43V 69.4V DO214AB
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
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5.0SMDJ26A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ26A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26V 42.1V DO214AB
товару немає в наявності
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