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RS2DAHR3G RS2DAHR3G Taiwan Semiconductor Corporation RS2AA%20SERIES_G14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
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RS2DAHR3G RS2DAHR3G Taiwan Semiconductor Corporation RS2AA%20SERIES_G14.pdf Description: DIODE GEN PURP 200V 1.5A DO214AC
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SFS1603G MNG SFS1603G MNG Taiwan Semiconductor Corporation SFS1601G%20SERIES_N15.pdf Description: DIODE GEN PURP 150V 16A TO263AB
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SFS1603GHMNG SFS1603GHMNG Taiwan Semiconductor Corporation SFS1601G%20SERIES_N15.pdf Description: DIODE GEN PURP 150V 16A TO263AB
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TSF20U100C C0G TSF20U100C C0G Taiwan Semiconductor Corporation TSF20U100C_E2105.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
на замовлення 2895 шт:
термін постачання 21-31 дні (днів)
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RS1GL RQG RS1GL RQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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ES1GL RFG ES1GL RFG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GL RHG RS1GL RHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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S1GL RHG S1GL RHG Taiwan Semiconductor Corporation S1xL_Rev.O15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
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RS1GL RTG RS1GL RTG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 400V 800MA SUBSMA
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S1GL RTG S1GL RTG Taiwan Semiconductor Corporation S1AL%20SERIES_O15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
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HS1GL RFG HS1GL RFG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GL RFG RS1GL RFG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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S1GL RFG S1GL RFG Taiwan Semiconductor Corporation S1AL%20SERIES_Q2108.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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HS1GL RUG HS1GL RUG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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S1GL RVG S1GL RVG Taiwan Semiconductor Corporation S1AL%20SERIES_O15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
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RS1MFS MXG RS1MFS MXG Taiwan Semiconductor Corporation RS1xFS_DS.pdf Description: DIODE, FAST, 1A, 1000V
товару немає в наявності
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TSM038N03PQ33 RGG TSM038N03PQ33 RGG Taiwan Semiconductor Corporation TSM038N03PQ33_B1610.pdf Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+17.72 грн
10000+15.85 грн
Мінімальне замовлення: 5000
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TSM038N03PQ33 RGG TSM038N03PQ33 RGG Taiwan Semiconductor Corporation TSM038N03PQ33_B1610.pdf Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
на замовлення 11217 шт:
термін постачання 21-31 дні (днів)
5+75.18 грн
10+45.23 грн
100+29.71 грн
500+21.59 грн
1000+19.56 грн
2000+17.86 грн
Мінімальне замовлення: 5
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ES2AAHR3G ES2AAHR3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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ES2AAHR3G ES2AAHR3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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ES2AA R3G ES2AA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
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ES2AA R3G ES2AA R3G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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ES2AAHM2G ES2AAHM2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
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ES2AA M2G ES2AA M2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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ES2A R5G ES2A R5G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
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ES2AHM4G ES2AHM4G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
товару немає в наявності
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ES2AHR5G ES2AHR5G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
товару немає в наявності
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SK35B M4G SK35B M4G Taiwan Semiconductor Corporation SK32B%20SERIES_P2212.pdf Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товару немає в наявності
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SK35BHM4G SK35BHM4G Taiwan Semiconductor Corporation SK32BH%20SERIES_B2212.pdf Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
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SK35B R5G SK35B R5G Taiwan Semiconductor Corporation SK32B%20SERIES_P2212.pdf Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SK35BHR5G SK35BHR5G Taiwan Semiconductor Corporation SK32BH%20SERIES_B2212.pdf Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
товару немає в наявності
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SS13 R3G SS13 R3G Taiwan Semiconductor Corporation SS12%20SERIES_Q2102.pdf Description: DIODE SCHOTTKY 30V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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ES2GAL M3G ES2GAL M3G Taiwan Semiconductor Corporation Description: 35NS, 2A, 400V, SUPER FAST RECOV
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
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ES2GAL M3G ES2GAL M3G Taiwan Semiconductor Corporation Description: 35NS, 2A, 400V, SUPER FAST RECOV
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
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ES2GFS M3G ES2GFS M3G Taiwan Semiconductor Corporation Description: 35NS, 2A, 400V, SUPER FAST RECOV
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
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ES2GFS M3G ES2GFS M3G Taiwan Semiconductor Corporation Description: 35NS, 2A, 400V, SUPER FAST RECOV
на замовлення 6990 шт:
термін постачання 21-31 дні (днів)
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SK315A R3G SK315A R3G Taiwan Semiconductor Corporation SK32A%20SERIES_V2102.pdf Description: DIODE SCHOTTKY 150V 3A DO214AC
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SK315A R3G SK315A R3G Taiwan Semiconductor Corporation SK32A%20SERIES_V2102.pdf Description: DIODE SCHOTTKY 150V 3A DO214AC
на замовлення 956 шт:
термін постачання 21-31 дні (днів)
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SMCJ51A V6G SMCJ51A V6G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
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SMCJ51A R7G SMCJ51A R7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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SMCJ51A V7G SMCJ51A V7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 51VWM 82.4VC DO214AB
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SMCJ51AHR7G SMCJ51AHR7G Taiwan Semiconductor Corporation SMCJ SERIES_R2004.pdf Description: TVS DIODE 51V 82.4V DO214AB
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SA160CA B0G SA160CA B0G Taiwan Semiconductor Corporation Description: TVS DIODE 160VWM 259VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 500W
Power Line Protection: No
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SA160CA A0G SA160CA A0G Taiwan Semiconductor Corporation SA%20SERIES_K1602.pdf Description: TVS DIODE 160V 259V DO204AC
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SA160CAHR0G SA160CAHR0G Taiwan Semiconductor Corporation SA%20SERIES_K1602.pdf Description: TVS DIODE 160V 259V DO204AC
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TS19501CB10 RBG TS19501CB10 RBG Taiwan Semiconductor Corporation Description: IC LED DRIVER CTRLR PWM 10MSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 0V ~ 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 70kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 10-MSOP-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 38V
Grade: Automotive
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TS19501CB10 RBG TS19501CB10 RBG Taiwan Semiconductor Corporation Description: IC LED DRIVER CTRLR PWM 10MSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 0V ~ 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 70kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 10-MSOP-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 38V
Grade: Automotive
на замовлення 14966 шт:
термін постачання 21-31 дні (днів)
2+252.68 грн
10+219.06 грн
25+207.05 грн
100+168.41 грн
250+159.77 грн
500+143.36 грн
1000+118.92 грн
2500+112.98 грн
Мінімальне замовлення: 2
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MBR7150HC0G MBR7150HC0G Taiwan Semiconductor Corporation MBR735%20SERIES_K2103.pdf Description: DIODE SCHOTTKY 150V 7.5A TO220AC
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MBRF7150HC0G MBRF7150HC0G Taiwan Semiconductor Corporation MBRF735%20SERIES_J1512.pdf Description: DIODE SCHTKY 150V 7.5A ITO220AC
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BZT52C7V5 RHG BZT52C7V5 RHG Taiwan Semiconductor Corporation BZT52C2V4 SERIES_G1804.pdf Description: DIODE ZENER 7.5V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
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BZT52C7V5 RHG BZT52C7V5 RHG Taiwan Semiconductor Corporation BZT52C2V4 SERIES_G1804.pdf Description: DIODE ZENER 7.5V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
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BZT52C75 RHG BZT52C75 RHG Taiwan Semiconductor Corporation pdf.php?pn=BZT52C75 Description: DIODE ZENER 75V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.55 грн
Мінімальне замовлення: 3000
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BZT52C75 RHG BZT52C75 RHG Taiwan Semiconductor Corporation pdf.php?pn=BZT52C75 Description: DIODE ZENER 75V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V
на замовлення 5675 шт:
термін постачання 21-31 дні (днів)
20+15.50 грн
30+10.00 грн
100+4.90 грн
500+3.83 грн
1000+2.66 грн
Мінімальне замовлення: 20
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P4KE68CA R0G P4KE68CA R0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 58.1VWM 92VC DO204AL
товару немає в наявності
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P4KE68CAHR0G P4KE68CAHR0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 58.1VWM 92VC DO204AL
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SK515C V6G SK515C V6G Taiwan Semiconductor Corporation SK52C%20SERIES_Q2102.pdf Description: DIODE SCHOTTKY 5A 150V DO-214AB
товару немає в наявності
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SK515C R7G SK515C R7G Taiwan Semiconductor Corporation SK52C%20SERIES_R2212.pdf Description: DIODE SCHOTTKY 150V 5A DO214AB
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SK515C R7G SK515C R7G Taiwan Semiconductor Corporation SK52C%20SERIES_R2212.pdf Description: DIODE SCHOTTKY 150V 5A DO214AB
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SK515CHR7G SK515CHR7G Taiwan Semiconductor Corporation SK52C%20SERIES_Q2102.pdf Description: DIODE SCHOTTKY 150V 5A DO214AB
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RS2DAHR3G RS2AA%20SERIES_G14.pdf
RS2DAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
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RS2DAHR3G RS2AA%20SERIES_G14.pdf
RS2DAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
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SFS1603G MNG SFS1601G%20SERIES_N15.pdf
SFS1603G MNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 16A TO263AB
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SFS1603GHMNG SFS1601G%20SERIES_N15.pdf
SFS1603GHMNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 16A TO263AB
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TSF20U100C C0G TSF20U100C_E2105.pdf
TSF20U100C C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
на замовлення 2895 шт:
термін постачання 21-31 дні (днів)
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RS1GL RQG RS1AL%20SERIES_N2103.pdf
RS1GL RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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ES1GL RFG ES1AL%20SERIES_L2103.pdf
ES1GL RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GL RHG RS1AL%20SERIES_N2103.pdf
RS1GL RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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S1GL RHG S1xL_Rev.O15.pdf
S1GL RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
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RS1GL RTG RS1AL%20SERIES_N2103.pdf
RS1GL RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
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S1GL RTG S1AL%20SERIES_O15.pdf
S1GL RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
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HS1GL RFG HS1AL%20SERIES_C2103.pdf
HS1GL RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GL RFG RS1AL%20SERIES_N2103.pdf
RS1GL RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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S1GL RFG S1AL%20SERIES_Q2108.pdf
S1GL RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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HS1GL RUG HS1AL%20SERIES_C2103.pdf
HS1GL RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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S1GL RVG S1AL%20SERIES_O15.pdf
S1GL RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
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RS1MFS MXG RS1xFS_DS.pdf
RS1MFS MXG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, FAST, 1A, 1000V
товару немає в наявності
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TSM038N03PQ33 RGG TSM038N03PQ33_B1610.pdf
TSM038N03PQ33 RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+17.72 грн
10000+15.85 грн
Мінімальне замовлення: 5000
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TSM038N03PQ33 RGG TSM038N03PQ33_B1610.pdf
TSM038N03PQ33 RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
на замовлення 11217 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+75.18 грн
10+45.23 грн
100+29.71 грн
500+21.59 грн
1000+19.56 грн
2000+17.86 грн
Мінімальне замовлення: 5
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ES2AAHR3G ES2AA%20SERIES_M2102.pdf
ES2AAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
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ES2AAHR3G ES2AA%20SERIES_M2102.pdf
ES2AAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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ES2AA R3G ES2AA%20SERIES_M2102.pdf
ES2AA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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ES2AA R3G ES2AA%20SERIES_M2102.pdf
ES2AA R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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ES2AAHM2G ES2AA%20SERIES_M2102.pdf
ES2AAHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
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ES2AA M2G ES2AA%20SERIES_M2102.pdf
ES2AA M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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ES2A R5G ES2A%20SERIES_L2102.pdf
ES2A R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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ES2AHM4G ES2A%20SERIES_L2102.pdf
ES2AHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
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ES2AHR5G ES2A%20SERIES_L2102.pdf
ES2AHR5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
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SK35B M4G SK32B%20SERIES_P2212.pdf
SK35B M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SK35BHM4G SK32BH%20SERIES_B2212.pdf
SK35BHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
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SK35B R5G SK32B%20SERIES_P2212.pdf
SK35B R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SK35BHR5G SK32BH%20SERIES_B2212.pdf
SK35BHR5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
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SS13 R3G SS12%20SERIES_Q2102.pdf
SS13 R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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ES2GAL M3G
ES2GAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 400V, SUPER FAST RECOV
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
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ES2GAL M3G
ES2GAL M3G
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 400V, SUPER FAST RECOV
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
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ES2GFS M3G
ES2GFS M3G
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 400V, SUPER FAST RECOV
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
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ES2GFS M3G
ES2GFS M3G
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 400V, SUPER FAST RECOV
на замовлення 6990 шт:
термін постачання 21-31 дні (днів)
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SK315A R3G SK32A%20SERIES_V2102.pdf
SK315A R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AC
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SK315A R3G SK32A%20SERIES_V2102.pdf
SK315A R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AC
на замовлення 956 шт:
термін постачання 21-31 дні (днів)
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SMCJ51A V6G SMCJ SERIES_R2004.pdf
SMCJ51A V6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AB
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SMCJ51A R7G SMCJ SERIES_R2004.pdf
SMCJ51A R7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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SMCJ51A V7G SMCJ SERIES_R2004.pdf
SMCJ51A V7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 51VWM 82.4VC DO214AB
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SMCJ51AHR7G SMCJ SERIES_R2004.pdf
SMCJ51AHR7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 51V 82.4V DO214AB
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SA160CA B0G
SA160CA B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 160VWM 259VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 500W
Power Line Protection: No
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SA160CA A0G SA%20SERIES_K1602.pdf
SA160CA A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 160V 259V DO204AC
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SA160CAHR0G SA%20SERIES_K1602.pdf
SA160CAHR0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 160V 259V DO204AC
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TS19501CB10 RBG
TS19501CB10 RBG
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRIVER CTRLR PWM 10MSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 0V ~ 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 70kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 10-MSOP-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 38V
Grade: Automotive
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TS19501CB10 RBG
TS19501CB10 RBG
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRIVER CTRLR PWM 10MSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 0V ~ 18V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 70kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 10-MSOP-EP
Dimming: Analog, PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 38V
Grade: Automotive
на замовлення 14966 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+252.68 грн
10+219.06 грн
25+207.05 грн
100+168.41 грн
250+159.77 грн
500+143.36 грн
1000+118.92 грн
2500+112.98 грн
Мінімальне замовлення: 2
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MBR7150HC0G MBR735%20SERIES_K2103.pdf
MBR7150HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 7.5A TO220AC
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MBRF7150HC0G MBRF735%20SERIES_J1512.pdf
MBRF7150HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHTKY 150V 7.5A ITO220AC
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BZT52C7V5 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C7V5 RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
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BZT52C7V5 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C7V5 RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
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BZT52C75 RHG pdf.php?pn=BZT52C75
BZT52C75 RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.55 грн
Мінімальне замовлення: 3000
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BZT52C75 RHG pdf.php?pn=BZT52C75
BZT52C75 RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V
на замовлення 5675 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+15.50 грн
30+10.00 грн
100+4.90 грн
500+3.83 грн
1000+2.66 грн
Мінімальне замовлення: 20
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P4KE68CA R0G P4KE%20SERIES_N2104.pdf
P4KE68CA R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO204AL
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P4KE68CAHR0G P4KE%20SERIES_N2104.pdf
P4KE68CAHR0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO204AL
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SK515C V6G SK52C%20SERIES_Q2102.pdf
SK515C V6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 5A 150V DO-214AB
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SK515C R7G SK52C%20SERIES_R2212.pdf
SK515C R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
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SK515C R7G SK52C%20SERIES_R2212.pdf
SK515C R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
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SK515CHR7G SK52C%20SERIES_Q2102.pdf
SK515CHR7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AB
товару немає в наявності
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