Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25120) > Сторінка 166 з 419
| Фото | Назва | Виробник | Інформація |
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S8MCHM6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 8A DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TS2938CS50 RLG | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 5V 500MA 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 300 µA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: 8-SOP Voltage - Output (Min/Fixed): 5V Control Features: Inhibit Part Status: Active Voltage Dropout (Max): 0.6V @ 500mA Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage Current - Supply (Max): 50 mA |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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TS2938CS50 RLG | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 5V 500MA 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 300 µA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: 8-SOP Voltage - Output (Min/Fixed): 5V Control Features: Inhibit Part Status: Active Voltage Dropout (Max): 0.6V @ 500mA Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage Current - Supply (Max): 50 mA |
на замовлення 16006 шт: термін постачання 21-31 дні (днів) |
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TS317CW RPG | Taiwan Semiconductor Corporation |
Description: IC REG LIN POS ADJ 500MA SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: 0°C ~ 125°C (TJ) Output Configuration: Positive Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: SOT-223 Voltage - Output (Max): 37V Voltage - Output (Min/Fixed): 1.25V Control Features: Current Limit PSRR: 80dB (120Hz) Protection Features: Over Temperature Current - Supply (Max): 100 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TS317CW RPG | Taiwan Semiconductor Corporation |
Description: IC REG LIN POS ADJ 500MA SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: 0°C ~ 125°C (TJ) Output Configuration: Positive Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: SOT-223 Voltage - Output (Max): 37V Voltage - Output (Min/Fixed): 1.25V Control Features: Current Limit PSRR: 80dB (120Hz) Protection Features: Over Temperature Current - Supply (Max): 100 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TS2937CM50 RNG | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 5V 500MA TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: TO-263AB (D2PAK) Voltage - Output (Min/Fixed): 5V Control Features: Current Limit Voltage Dropout (Max): 0.7V @ 500mA Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage Current - Supply (Max): 25 mA |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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TS2937CM50 RNG | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 5V 500MA TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: TO-263AB (D2PAK) Voltage - Output (Min/Fixed): 5V Control Features: Current Limit Voltage Dropout (Max): 0.7V @ 500mA Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage Current - Supply (Max): 25 mA |
на замовлення 1739 шт: термін постачання 21-31 дні (днів) |
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TS358CD C3G | Taiwan Semiconductor Corporation |
Description: IC OPAMP GP 2 CIRCUIT 8DIPPackaging: Tube Package / Case: 8-DIP (0.309", 7.87mm) Output Type: Differential Mounting Type: Through Hole Amplifier Type: Standard (General Purpose) Operating Temperature: -20°C ~ 85°C Current - Supply: 1.5mA Slew Rate: 0.4V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 45 nA Voltage - Input Offset: 2 mV Supplier Device Package: 8-DIP Number of Circuits: 2 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 32 V |
на замовлення 8679 шт: термін постачання 21-31 дні (днів) |
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TS5204CX50 RFG | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 5V 80MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: SOT-23 Voltage - Output (Min/Fixed): 5V Control Features: Current Limit Part Status: Active PSRR: 65dB (100Hz) Voltage Dropout (Max): 0.6V @ 80mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 3.1 mA |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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TS5204CX50 RFG | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 5V 80MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: SOT-23 Voltage - Output (Min/Fixed): 5V Control Features: Current Limit Part Status: Active PSRR: 65dB (100Hz) Voltage Dropout (Max): 0.6V @ 80mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 3.1 mA |
на замовлення 31942 шт: термін постачання 21-31 дні (днів) |
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TS5204CQ33 RFG | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 3.3V 80MA 6DFNPackaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: 6-DFN (2x2) Voltage - Output (Min/Fixed): 3.3V Control Features: Current Limit PSRR: 65dB (100Hz) Voltage Dropout (Max): 0.6V @ 80mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 3.1 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TS5204CQ33 RFG | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 3.3V 80MA 6DFNPackaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: 6-DFN (2x2) Voltage - Output (Min/Fixed): 3.3V Control Features: Current Limit PSRR: 65dB (100Hz) Voltage Dropout (Max): 0.6V @ 80mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 3.1 mA |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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TS79L05CY RMG | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR -5V 100MA SOT89Packaging: Tape & Reel (TR) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Current - Quiescent (Iq): 6 mA Voltage - Input (Max): -35V Number of Regulators: 1 Supplier Device Package: SOT-89 Voltage - Output (Min/Fixed): -5V Control Features: Current Limit PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 100mA (Typ) Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TSM038N04LCP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 40V 135A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5509 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TSM038N04LCP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 40V 135A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5509 pF @ 20 V |
на замовлення 480 шт: термін постачання 21-31 дні (днів) |
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BZD27C18PW | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 18V 1W SOD123WPackaging: Tape & Reel (TR) Tolerance: ±6.4% Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123W Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 13 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BZD27C18PW | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 18V 1W SOD123WPackaging: Cut Tape (CT) Tolerance: ±6.4% Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123W Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 13 V |
на замовлення 24895 шт: термін постачання 21-31 дні (днів) |
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TSM4NB60CH C5G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 600V 4A TO251Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
на замовлення 14316 шт: термін постачання 21-31 дні (днів) |
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TS2940CZ33 C0G | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 3.3V 1A TO220Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 15 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: TO-220 Voltage - Output (Min/Fixed): 3.3V Voltage Dropout (Max): 0.8V @ 800mA Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage Current - Supply (Max): 110 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TS2940CZ50 C0G | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 5V 1A TO220Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 15 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: TO-220 Voltage - Output (Min/Fixed): 5V Part Status: Active Voltage Dropout (Max): 0.8V @ 800mA Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage Current - Supply (Max): 110 mA |
на замовлення 3681 шт: термін постачання 21-31 дні (днів) |
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SMB10J30AHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 48.4VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 20.7A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1700 шт: термін постачання 21-31 дні (днів) |
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SMB10J30AHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 48.4VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 20.7A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2539 шт: термін постачання 21-31 дні (днів) |
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HS2DA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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HS2DA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
на замовлення 5381 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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RS2DAL M3G | Taiwan Semiconductor Corporation | Description: 150NS, 2A, 200V, FAST RECOVERY R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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RS2DAL M3G | Taiwan Semiconductor Corporation | Description: 150NS, 2A, 200V, FAST RECOVERY R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
| S2DAL M3G | Taiwan Semiconductor Corporation | Description: 2A, 200V, STANDARD RECOVERY RECT |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||||
| S2DAL M3G | Taiwan Semiconductor Corporation | Description: 2A, 200V, STANDARD RECOVERY RECT |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||||
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HS2DAL M3G | Taiwan Semiconductor Corporation | Description: 50NS, 2A, 200V, HIGH EFFICIENT R |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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HS2DAL M3G | Taiwan Semiconductor Corporation | Description: 50NS, 2A, 200V, HIGH EFFICIENT R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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RS2DA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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RS2DA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
на замовлення 1580 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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S2DA M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RS2DA M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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S2DA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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S2DA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RS2DAHM2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RS2DAHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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RS2DAHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SFS1603G MNG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 16A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SFS1603GHMNG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 16A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TSF20U100C C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 100V ITO220AB |
на замовлення 2895 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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RS1GL RQG | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ES1GL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RS1GL RHG | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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S1GL RHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RS1GL RTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 800MA SUBSMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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S1GL RTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA |
товару немає в наявності |
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HS1GL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
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RS1GL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GP 400V 800MA SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 800mA Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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S1GL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 9pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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HS1GL RUG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMAPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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S1GL RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RS1MFS MXG | Taiwan Semiconductor Corporation |
Description: DIODE, FAST, 1A, 1000V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TSM038N03PQ33 RGG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 78A 8PDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TSM038N03PQ33 RGG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 30V 78A 8PDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V |
на замовлення 11217 шт: термін постачання 21-31 дні (днів) |
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ES2AAHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ES2AAHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ES2AA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ES2AA R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. |
| S8MCHM6G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 8A DO214AB
Description: DIODE GEN PURP 8A DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| TS2938CS50 RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 500MA 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: 8-SOP
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Active
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 50 mA
Description: IC REG LINEAR 5V 500MA 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: 8-SOP
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Active
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 50 mA
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 34.18 грн |
| 5000+ | 31.27 грн |
| TS2938CS50 RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 500MA 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: 8-SOP
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Active
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 50 mA
Description: IC REG LINEAR 5V 500MA 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: 8-SOP
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Active
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 50 mA
на замовлення 16006 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 81.15 грн |
| 10+ | 69.37 грн |
| 25+ | 65.83 грн |
| 100+ | 50.74 грн |
| 250+ | 47.44 грн |
| 500+ | 41.92 грн |
| 1000+ | 32.55 грн |
| TS317CW RPG |
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LIN POS ADJ 500MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.25V
Control Features: Current Limit
PSRR: 80dB (120Hz)
Protection Features: Over Temperature
Current - Supply (Max): 100 µA
Description: IC REG LIN POS ADJ 500MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.25V
Control Features: Current Limit
PSRR: 80dB (120Hz)
Protection Features: Over Temperature
Current - Supply (Max): 100 µA
товару немає в наявності
В кошику
од. на суму грн.
| TS317CW RPG |
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LIN POS ADJ 500MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.25V
Control Features: Current Limit
PSRR: 80dB (120Hz)
Protection Features: Over Temperature
Current - Supply (Max): 100 µA
Description: IC REG LIN POS ADJ 500MA SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.25V
Control Features: Current Limit
PSRR: 80dB (120Hz)
Protection Features: Over Temperature
Current - Supply (Max): 100 µA
товару немає в наявності
В кошику
од. на суму грн.
| TS2937CM50 RNG |
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Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 500MA TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-263AB (D2PAK)
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
Description: IC REG LINEAR 5V 500MA TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-263AB (D2PAK)
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 63.56 грн |
| 1600+ | 56.56 грн |
| TS2937CM50 RNG |
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Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 500MA TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-263AB (D2PAK)
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
Description: IC REG LINEAR 5V 500MA TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-263AB (D2PAK)
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
на замовлення 1739 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 197.90 грн |
| 10+ | 120.40 грн |
| 25+ | 102.03 грн |
| 100+ | 76.31 грн |
| 250+ | 66.75 грн |
| TS358CD C3G |
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Виробник: Taiwan Semiconductor Corporation
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.309", 7.87mm)
Output Type: Differential
Mounting Type: Through Hole
Amplifier Type: Standard (General Purpose)
Operating Temperature: -20°C ~ 85°C
Current - Supply: 1.5mA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.309", 7.87mm)
Output Type: Differential
Mounting Type: Through Hole
Amplifier Type: Standard (General Purpose)
Operating Temperature: -20°C ~ 85°C
Current - Supply: 1.5mA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
на замовлення 8679 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.64 грн |
| 16+ | 20.49 грн |
| 50+ | 16.97 грн |
| 100+ | 14.88 грн |
| 250+ | 13.79 грн |
| 500+ | 13.12 грн |
| 1000+ | 12.37 грн |
| 2500+ | 11.81 грн |
| 5000+ | 11.47 грн |
| TS5204CX50 RFG |
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Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 80MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3.1 mA
Description: IC REG LINEAR 5V 80MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3.1 mA
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 21.14 грн |
| 6000+ | 18.95 грн |
| 15000+ | 18.25 грн |
| TS5204CX50 RFG |
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Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 80MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3.1 mA
Description: IC REG LINEAR 5V 80MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3.1 mA
на замовлення 31942 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 54.65 грн |
| 10+ | 46.33 грн |
| 25+ | 43.51 грн |
| 100+ | 33.33 грн |
| 250+ | 30.96 грн |
| 500+ | 26.35 грн |
| 1000+ | 20.73 грн |
| TS5204CQ33 RFG |
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Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 80MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3.1 mA
Description: IC REG LINEAR 3.3V 80MA 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3.1 mA
товару немає в наявності
В кошику
од. на суму грн.
| TS5204CQ33 RFG |
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Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 80MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3.1 mA
Description: IC REG LINEAR 3.3V 80MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.6V @ 80mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3.1 mA
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.28 грн |
| 10+ | 52.15 грн |
| TS79L05CY RMG |
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Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR -5V 100MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: SOT-89
Voltage - Output (Min/Fixed): -5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR -5V 100MA SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: SOT-89
Voltage - Output (Min/Fixed): -5V
Control Features: Current Limit
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
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| TSM038N04LCP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 40V 135A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5509 pF @ 20 V
Description: MOSFET N-CHANNEL 40V 135A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5509 pF @ 20 V
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| TSM038N04LCP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 40V 135A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5509 pF @ 20 V
Description: MOSFET N-CHANNEL 40V 135A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5509 pF @ 20 V
на замовлення 480 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.55 грн |
| 10+ | 96.56 грн |
| 100+ | 75.06 грн |
| BZD27C18PW |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±6.4%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Description: DIODE ZENER 18V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±6.4%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 6.50 грн |
| BZD27C18PW |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±6.4%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Description: DIODE ZENER 18V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±6.4%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
на замовлення 24895 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.95 грн |
| 16+ | 20.49 грн |
| 100+ | 13.01 грн |
| 500+ | 9.15 грн |
| 1000+ | 8.17 грн |
| 2000+ | 7.33 грн |
| 5000+ | 6.32 грн |
| TSM4NB60CH C5G |
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Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 600V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
на замовлення 14316 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 53.00 грн |
| 75+ | 40.91 грн |
| 150+ | 32.42 грн |
| 525+ | 25.79 грн |
| 1050+ | 25.51 грн |
| TS2940CZ33 C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
Description: IC REG LINEAR 3.3V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 3.3V
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
товару немає в наявності
В кошику
од. на суму грн.
| TS2940CZ50 C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
Description: IC REG LINEAR 5V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
на замовлення 3681 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 161.47 грн |
| 10+ | 139.54 грн |
| 25+ | 131.70 грн |
| 100+ | 105.29 грн |
| 250+ | 98.87 грн |
| 500+ | 86.51 грн |
| 1000+ | 70.50 грн |
| 2500+ | 65.64 грн |
| SMB10J30AHR5G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 850+ | 53.33 грн |
| 1700+ | 41.84 грн |
| SMB10J30AHR5G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2539 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.54 грн |
| 10+ | 77.90 грн |
| 100+ | 60.59 грн |
| HS2DA R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| HS2DA R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
на замовлення 5381 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RS2DAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 2A, 200V, FAST RECOVERY R
Description: 150NS, 2A, 200V, FAST RECOVERY R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RS2DAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 2A, 200V, FAST RECOVERY R
Description: 150NS, 2A, 200V, FAST RECOVERY R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| S2DAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 2A, 200V, STANDARD RECOVERY RECT
Description: 2A, 200V, STANDARD RECOVERY RECT
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| S2DAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 2A, 200V, STANDARD RECOVERY RECT
Description: 2A, 200V, STANDARD RECOVERY RECT
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| HS2DAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 200V, HIGH EFFICIENT R
Description: 50NS, 2A, 200V, HIGH EFFICIENT R
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| HS2DAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 200V, HIGH EFFICIENT R
Description: 50NS, 2A, 200V, HIGH EFFICIENT R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RS2DA R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RS2DA R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
на замовлення 1580 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| S2DA M2G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| RS2DA M2G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| S2DA R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| S2DA R3G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| RS2DAHM2G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| RS2DAHR3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RS2DAHR3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Description: DIODE GEN PURP 200V 1.5A DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| SFS1603G MNG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 16A TO263AB
Description: DIODE GEN PURP 150V 16A TO263AB
товару немає в наявності
В кошику
од. на суму грн.
| SFS1603GHMNG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 16A TO263AB
Description: DIODE GEN PURP 150V 16A TO263AB
товару немає в наявності
В кошику
од. на суму грн.
| TSF20U100C C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Description: DIODE ARRAY SCHOTT 100V ITO220AB
на замовлення 2895 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RS1GL RQG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| ES1GL RFG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| RS1GL RHG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| S1GL RHG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Description: DIODE GEN PURP 400V 1A SUB SMA
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| RS1GL RTG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
Description: DIODE GEN PURP 400V 800MA SUBSMA
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| S1GL RTG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Description: DIODE GEN PURP 400V 1A SUB SMA
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В кошику
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| HS1GL RFG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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од. на суму грн.
| RS1GL RFG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| S1GL RFG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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од. на суму грн.
| HS1GL RUG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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| S1GL RVG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Description: DIODE GEN PURP 400V 1A SUB SMA
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| RS1MFS MXG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE, FAST, 1A, 1000V
Description: DIODE, FAST, 1A, 1000V
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| TSM038N03PQ33 RGG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 18.93 грн |
| 10000+ | 16.93 грн |
| TSM038N03PQ33 RGG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
Description: MOSFET N-CH 30V 78A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V
на замовлення 11217 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 80.32 грн |
| 10+ | 48.32 грн |
| 100+ | 31.74 грн |
| 500+ | 23.06 грн |
| 1000+ | 20.90 грн |
| 2000+ | 19.08 грн |
| ES2AAHR3G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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| ES2AAHR3G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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од. на суму грн.
| ES2AA R3G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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| ES2AA R3G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
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од. на суму грн.


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