Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (22578) > Сторінка 166 з 377
| Фото | Назва | Виробник | Інформація |
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P4KE39AHB0G | Taiwan Semiconductor Corporation |
 Description: TVS DIODE 33.3V 53.9V DO204AL |
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1.5KE7.5CAHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 6.4VWM 11.3VC DO201 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 6.4V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.13V Voltage - Clamping (Max) @ Ipp: 11.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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1.5KE7.5CAHB0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 6.4VWM 11.3VC DO201 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 6.4V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.13V Voltage - Clamping (Max) @ Ipp: 11.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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TS10P05G D2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 600V 10A TS-6P |
на замовлення 1119 шт: термін постачання 21-31 дні (днів) |
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TS10P05G C2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 600V 10A TS-6P |
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TS10P05GHC2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 600V 10A TS-6P |
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TS10P05GHD2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 600V 10A TS-6P |
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MBR3035CT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 35V 30A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 35 V |
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MBR3035CTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 35V 30A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 35 V Qualification: AEC-Q101 |
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MBR3035PT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 35V 30A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 35 V |
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BZW04-26B R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 25.6V 41.5V DO204AL |
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BZW04-273B R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 273V 438V DO204AL |
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BZW04-28B R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 28.2VWM 45.7VC DO204AL |
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BZW04-299B R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 299V 482V DO204AL |
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BZW04-31B R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30.8V 49.9V DO204AL |
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BZW04-33B R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO204AL |
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BZW04-342B R0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 342V 548V DO204AL |
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BZW04-40HR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 40.2V 64.8V DO204AL |
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BZW04-40 R1G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 40.2VWM 64.8VC DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.2A Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
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BZW04-40HR1G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 40.2VWM 64.8VC DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 6.2A Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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BZW04-40 A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 40.2VWM 64.8VC DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.2A Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
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BZW04-40HA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 40.2VWM 64.8VC DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 6.2A Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
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BZW04-40HB0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 40.2VWM 64.8VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 6.2A Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
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.jpg "RS1GAL M3G") |
RS1GAL M3G | Taiwan Semiconductor Corporation | Description: 150NS, 1A, 400V, FAST RECOVERY R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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RS1GAL M3G | Taiwan Semiconductor Corporation | Description: 150NS, 1A, 400V, FAST RECOVERY R |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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ES1F R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
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ES1F R3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
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ES1FL RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
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ES1FL RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
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ES1F M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A DO214AC |
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ES1FHM2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A DO214AC |
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ES1FL RQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
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ES1FLHRQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA |
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ES1FLHRVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V Qualification: AEC-Q101 |
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ES1FL RUG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
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ES1FHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A DO214AC |
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ES1FLHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA |
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ES1FL RHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
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ES1FLHRHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V Qualification: AEC-Q101 |
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ES1FL M2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
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ES1FL MHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
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ES1FLHM2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V Qualification: AEC-Q101 |
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ES1FLHMHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V Qualification: AEC-Q101 |
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ES1FL MQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
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ES1FL MTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
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ES1FL RTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA |
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ES1FLHMQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA |
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ES1FLHMTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA |
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ES1FLHRTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA |
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1N5255B A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 28V 500MW DO35 Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 100°C (TJ) Voltage - Zener (Nom) (Vz): 28 V Impedance (Max) (Zzt): 44 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
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SMAJ14CHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 25.8VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 15.5A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 25.8V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
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SMAJ14CHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 25.8VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 15.5A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 25.8V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
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SMAJ14HR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 25.8VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 15.5A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 25.8V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
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SMAJ14HR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 25.8VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 15.5A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 25.8V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
на замовлення 3449 шт: термін постачання 21-31 дні (днів) |
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P6SMB39A M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO214AA |
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P6SMB39AHM4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO214AA |
товар відсутній |
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P6SMB39AHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Discontinued at Digi-Key |
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1KSMB39A M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 18.6A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No |
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1KSMB39AHM4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO214AA |
товар відсутній |
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1KSMB39A R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO214AA |
товар відсутній |
| P4KE39AHB0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Description: TVS DIODE 33.3V 53.9V DO204AL
товар відсутній
| 1.5KE7.5CAHA0G |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| 1.5KE7.5CAHB0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| TS10P05G D2G |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Description: BRIDGE RECT 1P 600V 10A TS-6P
на замовлення 1119 шт:
термін постачання 21-31 дні (днів)| TS10P05G C2G |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Description: BRIDGE RECT 1P 600V 10A TS-6P
товар відсутній
| TS10P05GHC2G |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Description: BRIDGE RECT 1P 600V 10A TS-6P
товар відсутній
| TS10P05GHD2G |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Description: BRIDGE RECT 1P 600V 10A TS-6P
товар відсутній
| MBR3035CT C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Description: DIODE ARR SCHOTT 35V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
товар відсутній
| MBR3035CTHC0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 35V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Qualification: AEC-Q101
товар відсутній
| MBR3035PT C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Description: DIODE ARR SCHOTT 35V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
товар відсутній
| BZW04-26B R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6V 41.5V DO204AL
Description: TVS DIODE 25.6V 41.5V DO204AL
товар відсутній
| BZW04-273B R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 273V 438V DO204AL
Description: TVS DIODE 273V 438V DO204AL
товар відсутній
| BZW04-28B R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO204AL
Description: TVS DIODE 28.2VWM 45.7VC DO204AL
товар відсутній
| BZW04-299B R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 299V 482V DO204AL
Description: TVS DIODE 299V 482V DO204AL
товар відсутній
| BZW04-31B R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8V 49.9V DO204AL
Description: TVS DIODE 30.8V 49.9V DO204AL
товар відсутній
| BZW04-33B R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Description: TVS DIODE 33.3V 53.9V DO204AL
товар відсутній
| BZW04-342B R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 342V 548V DO204AL
Description: TVS DIODE 342V 548V DO204AL
товар відсутній
| BZW04-40HR0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2V 64.8V DO204AL
Description: TVS DIODE 40.2V 64.8V DO204AL
товар відсутній
| BZW04-40 R1G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
| BZW04-40HR1G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| BZW04-40 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
| BZW04-40HA0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
| BZW04-40HB0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
| RS1GAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 400V, FAST RECOVERY R
Description: 150NS, 1A, 400V, FAST RECOVERY R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| RS1GAL M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 400V, FAST RECOVERY R
Description: 150NS, 1A, 400V, FAST RECOVERY R
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| ES1F R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
| ES1F R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
| ES1FL RVG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
| ES1FL RVG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
| ES1F M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Description: DIODE GEN PURP 300V 1A DO214AC
товар відсутній
| ES1FHM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Description: DIODE GEN PURP 300V 1A DO214AC
товар відсутній
| ES1FL RQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
| ES1FLHRQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Description: DIODE GEN PURP 300V 1A SUB SMA
товар відсутній
| ES1FLHRVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
| ES1FL RUG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
| ES1FHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Description: DIODE GEN PURP 300V 1A DO214AC
товар відсутній
| ES1FLHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Description: DIODE GEN PURP 300V 1A SUB SMA
товар відсутній
| ES1FL RHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
| ES1FLHRHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
| ES1FL M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
| ES1FL MHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
| ES1FLHM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
| ES1FLHMHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
| ES1FL MQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
| ES1FL MTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
| ES1FL RTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Description: DIODE GEN PURP 300V 1A SUB SMA
товар відсутній
| ES1FLHMQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Description: DIODE GEN PURP 300V 1A SUB SMA
товар відсутній
| ES1FLHMTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Description: DIODE GEN PURP 300V 1A SUB SMA
товар відсутній
| ES1FLHRTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Description: DIODE GEN PURP 300V 1A SUB SMA
товар відсутній
| 1N5255B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 28V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: DIODE ZENER 28V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товар відсутній
| SMAJ14CHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
| SMAJ14CHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товар відсутній
| SMAJ14HR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
| SMAJ14HR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 14VWM 25.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 25.8V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
на замовлення 3449 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 32.7 грн |
| 11+ | 25.67 грн |
| 100+ | 17.46 грн |
| 500+ | 12.29 грн |
| P6SMB39A M4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
товар відсутній
| P6SMB39AHM4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
товар відсутній
| P6SMB39AHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
| 1KSMB39A M4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
товар відсутній
| 1KSMB39AHM4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO214AA
Description: TVS DIODE 33.3V 53.9V DO214AA
товар відсутній
| 1KSMB39A R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO214AA
Description: TVS DIODE 33.3V 53.9V DO214AA
товар відсутній