Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25643) > Сторінка 170 з 428
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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TQM033NB04CR RLG | Taiwan Semiconductor Corporation |
 Description: MOSFET N-CH 40V 21A/121A PDFN56UPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V Power Dissipation (Max): 3.1W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TQM033NB04CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 21A/121A PDFN56U Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V Power Dissipation (Max): 3.1W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 7288 шт: термін постачання 21-31 дні (днів) |
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TQM050NB06CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 16A/104A PDFN56U Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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TQM050NB06CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 16A/104A PDFN56U Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2160 шт: термін постачання 21-31 дні (днів) |
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MMSZ5262B RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 51V 500MW SOD123F |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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BZD27C15PHRHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Grade: Automotive Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 14.7 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.12% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C15PHMHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Grade: Automotive Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 14.7 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.12% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C15PHMQG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Grade: Automotive Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 14.7 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.12% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C15PHMTG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Grade: Automotive Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 14.7 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.12% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C15PHRTG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C15PHRQG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C15P RQG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C15P M2G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 14.7 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.12% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C15PHRFG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C15PHRVG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C15P RUG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Current - Reverse Leakage @ Vr: 1 µA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 14.7 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.12% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3600 шт В кошику од. на суму грн. | ||||||||||
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BZD27C15PHRUG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C15PHM2G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Grade: Automotive Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 14.7 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.12% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C15P RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Tolerance: ±6.12% Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 14.7 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 11 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C15P MHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Tolerance: ±6.12% Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 14.7 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: Sub SMA Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 11 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C15P MQG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C15P MTG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C15P RTG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZD27C15P RFG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TPMR6J S1G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 6A TO277A |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||
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TPMR6J S1G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 6A TO277A |
на замовлення 7405 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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P6SMB39CA M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO214AA |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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P6SMB39CAHM4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO214AA |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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P6SMB39CAHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO214AA Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 53.9V Voltage - Breakdown (Min): 37.1V Bidirectional Channels: 1 Supplier Device Package: DO-214AA (SMB) Voltage - Reverse Standoff (Typ): 33.3V Current - Peak Pulse (10/1000µs): 11.6A Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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S15DLWHRVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A SOD123W |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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S15DLWHRVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1.5A SOD123W |
на замовлення 10079 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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GBPC1508W T0G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 800V 15A GBPC-W |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | ||||||||||
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BZT52C7V5S RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.5V 200MW SOD323F Current - Reverse Leakage @ Vr: 900 nA @ 5 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Power - Max: 200 mW Part Status: Active Supplier Device Package: SOD-323F Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 7.5 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZT52C75S RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 75V 200MW SOD323F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZT52C75K RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 75V 200MW SOD523F |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
| HT11G R0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 1A TS-1 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||
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SK39A M2G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 3A DO214AC Current - Reverse Leakage @ Vr: 100 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SK39AHM2G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 3A DO214AC Current - Reverse Leakage @ Vr: 100 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SK39A R3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 3A DO214AC Current - Reverse Leakage @ Vr: 100 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SK39AHR3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 3A DO214AC Current - Reverse Leakage @ Vr: 100 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3600 шт В кошику од. на суму грн. | ||||||||||
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SK39B M4G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 3A DO214AA Current - Reverse Leakage @ Vr: 100 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SK39B R5G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 3A DO214AA Current - Reverse Leakage @ Vr: 100 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SK39BHM4G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 90 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SK39BHR5G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 90 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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BZT52C39S RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 39V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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BZT52C39S RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 39V 200MW SOD323F Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TST40L45CW C0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 20A TO220AB |
на замовлення 728 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
| LSR104 L0 | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 1A MELF Current - Reverse Leakage @ Vr: 1 mA @ 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: MELF Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 110pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| LSR104-J0 L0 | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 40V 1A MELF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| TSM2N7002KCU | Taiwan Semiconductor Corporation |
Description: 60V, 0.24A, SINGLE N-CHANNEL POW Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V Power Dissipation (Max): 298mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||
| TSM2N7002KCU | Taiwan Semiconductor Corporation |
Description: 60V, 0.24A, SINGLE N-CHANNEL POW Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V Power Dissipation (Max): 298mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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SRS1620 MNG | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 20V TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SRS1620HMNG | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 20V TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
 |
UF1K A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1A DO204AL Capacitance @ Vr, F: 17pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-204AL (DO-41) Current - Average Rectified (Io): 1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MBRS2535CT MNG | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 35V TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P6SMB160CA M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 136VWM 219VC DO214AA |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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P6SMB160CAHM4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 136VWM 219VC DO214AA |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||
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P6SMB160CA R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 136VWM 219VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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P6SMB160CAHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 136VWM 219VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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S2MFS M3G | Taiwan Semiconductor Corporation | Description: 2A, 1000V, STANDARD RECOVERY REC |
товару немає в наявності |
В кошику од. на суму грн. |
| TQM033NB04CR RLG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 21A/121A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 21A/121A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 47.07 грн |
| TQM033NB04CR RLG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 21A/121A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 21A/121A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Qualification: AEC-Q101
на замовлення 7288 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 163.34 грн |
| 10+ | 100.79 грн |
| 50+ | 76.36 грн |
| 100+ | 64.24 грн |
| 500+ | 51.24 грн |
| TQM050NB06CR RLG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TQM050NB06CR RLG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2160 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 195.06 грн |
| 10+ | 121.18 грн |
| 50+ | 92.38 грн |
| 100+ | 77.98 грн |
| 500+ | 62.70 грн |
| MMSZ5262B RHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 500MW SOD123F
Description: DIODE ZENER 51V 500MW SOD123F
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZD27C15PHRHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 14.7V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15PHMHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 14.7V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15PHMQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 14.7V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15PHMTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 14.7V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15PHRTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15PHRQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15P RQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15P M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Description: DIODE ZENER 14.7V 1W SUB SMA
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15PHRFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15PHRVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15P RUG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 14.7V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3600 шт
В кошику
од. на суму грн.
| BZD27C15PHRUG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15PHM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 14.7V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15P RHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15P MHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Description: DIODE ZENER 14.7V 1W SUB SMA
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 14.7 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15P MQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15P MTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15P RTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15P RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Description: DIODE ZENER 14.7V 1W SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| TPMR6J S1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A TO277A
Description: DIODE GEN PURP 600V 6A TO277A
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| TPMR6J S1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A TO277A
Description: DIODE GEN PURP 600V 6A TO277A
на замовлення 7405 шт:
термін постачання 21-31 дні (днів)
| P6SMB39CA M4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| P6SMB39CAHM4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| P6SMB39CAHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 11.6A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 11.6A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| S15DLWHRVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A SOD123W
Description: DIODE GEN PURP 200V 1.5A SOD123W
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| S15DLWHRVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A SOD123W
Description: DIODE GEN PURP 200V 1.5A SOD123W
на замовлення 10079 шт:
термін постачання 21-31 дні (днів)
| GBPC1508W T0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 15A GBPC-W
Description: BRIDGE RECT 1P 800V 15A GBPC-W
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.
| BZT52C7V5S RRG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 200MW SOD323F
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 200 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 7.5V 200MW SOD323F
Current - Reverse Leakage @ Vr: 900 nA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Power - Max: 200 mW
Part Status: Active
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C75S RRG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 200MW SOD323F
Description: DIODE ZENER 75V 200MW SOD323F
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C75K RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 75V 200MW SOD523F
Description: DIODE ZENER 75V 200MW SOD523F
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| HT11G R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A TS-1
Description: DIODE GEN PURP 50V 1A TS-1
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SK39A M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 90V 3A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SK39AHM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 90V 3A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SK39A R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 90V 3A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SK39AHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 90V 3A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3600 шт
В кошику
од. на суму грн.
| SK39B M4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AA
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 90V 3A DO214AA
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SK39B R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AA
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 90V 3A DO214AA
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SK39BHM4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
товару немає в наявності
В кошику
од. на суму грн.
| SK39BHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Description: DIODE SCHOTTKY 90V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
товару немає в наявності
В кошику
од. на суму грн.
| BZT52C39S RRG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
Description: DIODE ZENER 39V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZT52C39S RRG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
Description: DIODE ZENER 39V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 27.3 V
товару немає в наявності
В кошику
од. на суму грн.
| TST40L45CW C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 20A TO220AB
Description: DIODE SCHOTTKY 45V 20A TO220AB
на замовлення 728 шт:
термін постачання 21-31 дні (днів)
| LSR104 L0 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A MELF
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 1A MELF
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
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| LSR104-J0 L0 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A MELF
Description: DIODE SCHOTTKY 40V 1A MELF
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| TSM2N7002KCU |
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 0.24A, SINGLE N-CHANNEL POW
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
Description: 60V, 0.24A, SINGLE N-CHANNEL POW
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
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Мінімальне замовлення: 3000 шт
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| TSM2N7002KCU |
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 0.24A, SINGLE N-CHANNEL POW
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
Description: 60V, 0.24A, SINGLE N-CHANNEL POW
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 30 V
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| SRS1620 MNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 20V TO263AB
Description: DIODE ARRAY SCHOTTKY 20V TO263AB
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| SRS1620HMNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 20V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Description: DIODE ARRAY SCHOTTKY 20V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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| UF1K A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Description: DIODE GEN PURP 800V 1A DO204AL
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
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| MBRS2535CT MNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 35V TO263AB
Description: DIODE ARRAY SCHOTTKY 35V TO263AB
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| P6SMB160CA M4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AA
Description: TVS DIODE 136VWM 219VC DO214AA
товару немає в наявності
Мінімальне замовлення: 6000 шт
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| P6SMB160CAHM4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AA
Description: TVS DIODE 136VWM 219VC DO214AA
товару немає в наявності
Мінімальне замовлення: 6000 шт
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| P6SMB160CA R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AA
Description: TVS DIODE 136VWM 219VC DO214AA
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| P6SMB160CAHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AA
Description: TVS DIODE 136VWM 219VC DO214AA
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| S2MFS M3G |
Виробник: Taiwan Semiconductor Corporation
Description: 2A, 1000V, STANDARD RECOVERY REC
Description: 2A, 1000V, STANDARD RECOVERY REC
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