Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25554) > Сторінка 229 з 426
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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HS1KAL | Taiwan Semiconductor Corporation |
 Description: DIODE STANDARD 800V 1A THIN SMAPackaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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HS1KAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 800V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HS2KFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 2A SOD128 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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HS2KFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 2A SOD128 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
на замовлення 6800 шт: термін постачання 21-31 дні (днів) |
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HS2KAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 2A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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HS2KAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 2A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
на замовлення 3485 шт: термін постачання 21-31 дні (днів) |
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HERAF1606G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 16A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Capacitance @ Vr, F: 110pF @ 4V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
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BZX584B13 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX584B6V2 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.2V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX584B10 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 10V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX584B5V1 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.1V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX584B4V7 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.7V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX584B8V2 RSG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 150MW SOD523F |
товару немає в наявності |
Мінімальне замовлення: 104000 шт В кошику од. на суму грн. | ||||||||||||||
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BZX584B6V8 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.8V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX584B9V1 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 9.1V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX584B7V5 RSG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.5V 150MW SOD523F |
товару немає в наявності |
Мінімальне замовлення: 104000 шт В кошику од. на суму грн. | ||||||||||||||
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BZX584B11 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 11V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX584B8V2 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX584B5V1 RSG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.1V 150MW SOD523F |
товару немає в наявності |
Мінімальне замовлення: 104000 шт В кошику од. на суму грн. | ||||||||||||||
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BZX584B12 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX584B15 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 15V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX584B6V8 RSG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.8V 150MW SOD523F |
товару немає в наявності |
Мінімальне замовлення: 104000 шт В кошику од. на суму грн. | ||||||||||||||
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BZX584B16 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 16V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX584B20 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 20V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX584B5V6 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.6V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX584B7V5 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.5V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5KE91CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 77.8VWM 125VC DO201 Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 125V Voltage - Breakdown (Min): 86.5V Bidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 77.8V Current - Peak Pulse (10/1000µs): 12.6A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1250 шт В кошику од. на суму грн. | ||||||||||||||
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SMAJ150AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 150VWM 243VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 1.3A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 167V Voltage - Clamping (Max) @ Ipp: 243V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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TST40L120CW | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 120V 20A TO220AB |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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TS20P06G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 800V 20A TS-6P Current - Reverse Leakage @ Vr: 10 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Average Rectified (Io): 20 A Voltage - Peak Reverse (Max): 800 V Supplier Device Package: TS-6P Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMB18AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 15.3VWM 25.5V DO214AA Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 25.5V Voltage - Breakdown (Min): 17.1V Unidirectional Channels: 1 Supplier Device Package: DO-214AA (SMB) Voltage - Reverse Standoff (Typ): 15.3V Current - Peak Pulse (10/1000µs): 25A Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SFA801G C0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 8A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SFA802GHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 8A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SFA803G C0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 8A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SFA805G C0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 8A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SFA806GHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 8A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SFA808GHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 8A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SFA801GHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 8A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SFA803GHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 8A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SFA807G C0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 500V 8A TO220AC Current - Reverse Leakage @ Vr: 10 µA @ 500 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Voltage - DC Reverse (Vr) (Max): 500 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SFA807GHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 500V 8A TO220AC Current - Reverse Leakage @ Vr: 10 µA @ 500 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Voltage - DC Reverse (Vr) (Max): 500 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SFA802G C0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 8A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SFA805GHC0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 8A TO220AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SFA806G C0G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 8A TO220AC Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SFA806G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 8A TO220AC Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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PGSMAJ10CA F4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10VWM 17VC DO214AC Part Status: Obsolete Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 17V Voltage - Breakdown (Min): 11.1V Bidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 10V Current - Peak Pulse (10/1000µs): 23.5A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SK14BH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||
| SMCJ33CA M6 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TSM260P02CX RFG | Taiwan Semiconductor Corporation |
Description: -20V, -6.5A, SINGLE P-CHANNEL PO Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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TSM260P02CX RFG | Taiwan Semiconductor Corporation |
Description: -20V, -6.5A, SINGLE P-CHANNEL PO Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V |
на замовлення 12001 шт: термін постачання 21-31 дні (днів) |
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TSM2323CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 4.7A SOT23 Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 63000 шт: термін постачання 21-31 дні (днів) |
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TSM2323CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 4.7A SOT23 Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 66151 шт: термін постачання 21-31 дні (днів) |
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TSUP10M45SH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 10A SMPC4.6U Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1099pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC4.6U) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TSUP10M45SH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 10A SMPC4.6U Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount, Wettable Flank Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1099pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC4.6U) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9876 шт: термін постачання 21-31 дні (днів) |
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MTZJ9V1SB R0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.79V 500MW DO34 Current - Reverse Leakage @ Vr: 500 nA @ 6 V Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-34 Impedance (Max) (Zzt): 25 Ohms Voltage - Zener (Nom) (Vz): 8.79 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Tolerance: ±2% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
|
|
MTZJ4V3SC R0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.44V 500MW DO34 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
|
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MTZJ4V3SA R0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.17V 500MW DO34 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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MTZJ7V5SC R0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.48V 500MW DO34 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
|
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MTZJ6V2SA R0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.94V 500MW DO34 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
 |
MBRF1060CTH | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 60V 10A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| HS1KAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE STANDARD 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| HS1KAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE STANDARD 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| HS2KFS |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| HS2KFS |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 6800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.55 грн |
| 14+ | 22.16 грн |
| 100+ | 11.17 грн |
| 500+ | 9.29 грн |
| 1000+ | 7.23 грн |
| 2000+ | 6.47 грн |
| 5000+ | 6.22 грн |
| HS2KAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| HS2KAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 3485 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.00 грн |
| 15+ | 21.27 грн |
| 100+ | 10.72 грн |
| 500+ | 8.91 грн |
| 1000+ | 6.94 грн |
| 2000+ | 6.21 грн |
| HERAF1606G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.59 грн |
| 50+ | 62.41 грн |
| 100+ | 49.45 грн |
| 500+ | 39.34 грн |
| 1000+ | 32.05 грн |
| BZX584B13 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 150MW SOD523F
Description: DIODE ZENER 13V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B6V2 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 150MW SOD523F
Description: DIODE ZENER 6.2V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B10 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 150MW SOD523F
Description: DIODE ZENER 10V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B5V1 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 150MW SOD523F
Description: DIODE ZENER 5.1V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B4V7 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 150MW SOD523F
Description: DIODE ZENER 4.7V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B8V2 RSG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 150MW SOD523F
Description: DIODE ZENER 8.2V 150MW SOD523F
товару немає в наявності
Мінімальне замовлення: 104000 шт
В кошику
од. на суму грн.
| BZX584B6V8 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 150MW SOD523F
Description: DIODE ZENER 6.8V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B9V1 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 150MW SOD523F
Description: DIODE ZENER 9.1V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B7V5 RSG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 150MW SOD523F
Description: DIODE ZENER 7.5V 150MW SOD523F
товару немає в наявності
Мінімальне замовлення: 104000 шт
В кошику
од. на суму грн.
| BZX584B11 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 150MW SOD523F
Description: DIODE ZENER 11V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B8V2 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 150MW SOD523F
Description: DIODE ZENER 8.2V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B5V1 RSG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 150MW SOD523F
Description: DIODE ZENER 5.1V 150MW SOD523F
товару немає в наявності
Мінімальне замовлення: 104000 шт
В кошику
од. на суму грн.
| BZX584B12 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 150MW SOD523F
Description: DIODE ZENER 12V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B15 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 150MW SOD523F
Description: DIODE ZENER 15V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B6V8 RSG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 150MW SOD523F
Description: DIODE ZENER 6.8V 150MW SOD523F
товару немає в наявності
Мінімальне замовлення: 104000 шт
В кошику
од. на суму грн.
| BZX584B16 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 150MW SOD523F
Description: DIODE ZENER 16V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B20 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 150MW SOD523F
Description: DIODE ZENER 20V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B5V6 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 150MW SOD523F
Description: DIODE ZENER 5.6V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B7V5 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 150MW SOD523F
Description: DIODE ZENER 7.5V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE91CAH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 77.8VWM 125VC DO201
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 125V
Voltage - Breakdown (Min): 86.5V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 77.8V
Current - Peak Pulse (10/1000µs): 12.6A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
Description: TVS DIODE 77.8VWM 125VC DO201
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 125V
Voltage - Breakdown (Min): 86.5V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 77.8V
Current - Peak Pulse (10/1000µs): 12.6A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1250 шт
В кошику
од. на суму грн.
| SMAJ150AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 150VWM 243VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| TST40L120CW |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 120V 20A TO220AB
Description: DIODE SCHOTTKY 120V 20A TO220AB
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.30 грн |
| 10+ | 189.24 грн |
| 100+ | 152.13 грн |
| 500+ | 117.30 грн |
| TS20P06G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 20A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Average Rectified (Io): 20 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Description: BRIDGE RECT 1P 800V 20A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Average Rectified (Io): 20 A
Voltage - Peak Reverse (Max): 800 V
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB18AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 25.5V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 25A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: TVS DIODE 15.3VWM 25.5V DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 25.5V
Voltage - Breakdown (Min): 17.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 15.3V
Current - Peak Pulse (10/1000µs): 25A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.78 грн |
| SFA801G C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 8A TO220AC
Description: DIODE GEN PURP 50V 8A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| SFA802GHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 8A TO220AC
Description: DIODE GEN PURP 100V 8A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| SFA803G C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 8A TO220AC
Description: DIODE GEN PURP 150V 8A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| SFA805G C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 8A TO220AC
Description: DIODE GEN PURP 300V 8A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| SFA806GHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A TO220AC
Description: DIODE GEN PURP 400V 8A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| SFA808GHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A TO220AC
Description: DIODE GEN PURP 600V 8A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| SFA801GHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 8A TO220AC
Description: DIODE GEN PURP 50V 8A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| SFA803GHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 8A TO220AC
Description: DIODE GEN PURP 150V 8A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| SFA807G C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| SFA807GHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE GEN PURP 500V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| SFA802G C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 8A TO220AC
Description: DIODE GEN PURP 100V 8A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| SFA805GHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 8A TO220AC
Description: DIODE GEN PURP 300V 8A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
| SFA806G C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE STANDARD 400V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| SFA806G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE STANDARD 400V 8A TO220AC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 91.44 грн |
| 50+ | 41.28 грн |
| 100+ | 36.70 грн |
| 500+ | 26.90 грн |
| 1000+ | 24.48 грн |
| PGSMAJ10CA F4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 23.5A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
Description: TVS DIODE 10VWM 17VC DO214AC
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Bidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 23.5A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SK14BH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| SMCJ33CA M6 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
В кошику
од. на суму грн.
| TSM260P02CX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: -20V, -6.5A, SINGLE P-CHANNEL PO
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Description: -20V, -6.5A, SINGLE P-CHANNEL PO
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.79 грн |
| 6000+ | 11.30 грн |
| 9000+ | 10.78 грн |
| TSM260P02CX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: -20V, -6.5A, SINGLE P-CHANNEL PO
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Description: -20V, -6.5A, SINGLE P-CHANNEL PO
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
на замовлення 12001 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.24 грн |
| 10+ | 32.24 грн |
| 100+ | 20.83 грн |
| 500+ | 14.93 грн |
| 1000+ | 13.45 грн |
| TSM2323CX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.19 грн |
| 6000+ | 17.98 грн |
| 9000+ | 17.24 грн |
| 15000+ | 15.51 грн |
| TSM2323CX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CHANNEL 20V 4.7A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 66151 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.82 грн |
| 10+ | 48.20 грн |
| 100+ | 31.72 грн |
| 500+ | 23.11 грн |
| 1000+ | 20.97 грн |
| TSUP10M45SH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1099pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC4.6U)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 10A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1099pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC4.6U)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6000+ | 20.03 грн |
| TSUP10M45SH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 10A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1099pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC4.6U)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 10A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1099pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC4.6U)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9876 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.24 грн |
| 10+ | 51.64 грн |
| 100+ | 33.99 грн |
| 500+ | 24.77 грн |
| 1000+ | 22.48 грн |
| 2000+ | 20.55 грн |
| MTZJ9V1SB R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.79V 500MW DO34
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-34
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 8.79 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 8.79V 500MW DO34
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-34
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 8.79 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MTZJ4V3SC R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.44V 500MW DO34
Description: DIODE ZENER 4.44V 500MW DO34
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MTZJ4V3SA R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.17V 500MW DO34
Description: DIODE ZENER 4.17V 500MW DO34
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MTZJ7V5SC R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.48V 500MW DO34
Description: DIODE ZENER 7.48V 500MW DO34
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MTZJ6V2SA R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.94V 500MW DO34
Description: DIODE ZENER 5.94V 500MW DO34
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| MBRF1060CTH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOT 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.