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1PGSMA4762HR3G 1PGSMA4762HR3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 82V 1.25W DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+14.09 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
1PGSMA4762HR3G 1PGSMA4762HR3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 82V 1.25W DO214AC
на замовлення 3356 шт:
термін постачання 21-31 дні (днів)
10+32.73 грн
12+27.18 грн
100+20.31 грн
500+14.98 грн
Мінімальне замовлення: 10
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1PGSMA4762 R3G 1PGSMA4762 R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 82V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62.2 V
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1PGSMA4762 R3G 1PGSMA4762 R3G Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 82V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62.2 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
11+31.09 грн
13+25.29 грн
100+18.84 грн
Мінімальне замовлення: 11
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1PGSMA4762 1PGSMA4762 Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 82V 1.25W DO214AC
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1PGSMA4762H 1PGSMA4762H Taiwan Semiconductor Corporation 1PGSMA%20SERIES_B2102.pdf Description: DIODE ZENER 82V 1.25W DO214AC
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1SMA4762 1SMA4762 Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 82V 1.25W DO214AC
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1SMA4762H 1SMA4762H Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 82V 1.25W DO214AC
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1SMA4762 R3G 1SMA4762 R3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 82V 1.25W DO214AC
товару немає в наявності
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1SMA4762HR3G 1SMA4762HR3G Taiwan Semiconductor Corporation 1SMA4737%20SERIES_P2102.pdf Description: DIODE ZENER 82V 1.25W DO214AC
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SS14MH SS14MH Taiwan Semiconductor Corporation SS13MH SERIES_A2103.pdf Description: DIODE SCHOTTKY 40V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
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SS14MH SS14MH Taiwan Semiconductor Corporation SS13MH SERIES_A2103.pdf Description: DIODE SCHOTTKY 40V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
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TSM1NB60CH C5G TSM1NB60CH C5G Taiwan Semiconductor Corporation TSM1NB60CH_A2308.pdf Description: MOSFET N-CHANNEL 600V 1A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
на замовлення 14962 шт:
термін постачання 21-31 дні (днів)
4+82.64 грн
75+34.12 грн
150+30.33 грн
525+23.40 грн
1050+21.20 грн
2025+19.44 грн
5025+17.15 грн
10050+15.92 грн
Мінімальне замовлення: 4
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S1JFSHMWG S1JFSHMWG Taiwan Semiconductor Corporation S1DFS%20SERIES_C2103.pdf Description: DIODE GEN PURP 600V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
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S1JFSHMWG S1JFSHMWG Taiwan Semiconductor Corporation S1DFS%20SERIES_C2103.pdf Description: DIODE GEN PURP 600V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 801 шт:
термін постачання 21-31 дні (днів)
9+39.28 грн
12+28.37 грн
100+17.67 грн
500+11.35 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
HS1JFS HS1JFS Taiwan Semiconductor Corporation pdf.php?pn=HS1JFS Description: DIODE GEN PURP 600V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
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HS1JFS HS1JFS Taiwan Semiconductor Corporation pdf.php?pn=HS1JFS Description: DIODE GEN PURP 600V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 6948 шт:
термін постачання 21-31 дні (днів)
10+33.55 грн
14+22.61 грн
100+11.40 грн
500+9.48 грн
1000+7.38 грн
2000+6.60 грн
5000+6.35 грн
Мінімальне замовлення: 10
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SRF10200 SRF10200 Taiwan Semiconductor Corporation SRF1020 SERIES_L2105.pdf Description: DIODE SCHOTTKY 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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SR1203 A0G SR1203 A0G Taiwan Semiconductor Corporation SR1202%20SERIES_G2105.pdf Description: DIODE SCHOTTKY 30V 12A DO201AD
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SR1203 SR1203 Taiwan Semiconductor Corporation SR1202 SERIES_G2105.pdf Description: DIODE SCHOTTKY 30V 12A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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SR1203HA0G SR1203HA0G Taiwan Semiconductor Corporation SR1202%20SERIES_G2105.pdf Description: DIODE SCHOTTKY 30V 12A DO201AD
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SMDJ10CAH SMDJ10CAH Taiwan Semiconductor Corporation Description: TVS DIODE 10VWM 17VC DO214AB
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SMDJ10CA M6G SMDJ10CA M6G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 10VWM 17VC DO214AB
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SMDJ10CAHR7G SMDJ10CAHR7G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 10VWM 17VC DO214AB
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SMDJ10CAHM6G SMDJ10CAHM6G Taiwan Semiconductor Corporation SMDJH%20SERIES_B2104.pdf Description: TVS DIODE 10VWM 17VC DO214AB
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S1MBH S1MBH Taiwan Semiconductor Corporation pdf.php?pn=S1MBH Description: DIODE GEN PURP 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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S1MBHR5G S1MBHR5G Taiwan Semiconductor Corporation S1AB%20SERIES_I2102.pdf Description: DIODE GEN PURP 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 6800 шт:
термін постачання 21-31 дні (днів)
3400+11.58 грн
Мінімальне замовлення: 3400
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S1MB R5G S1MB R5G Taiwan Semiconductor Corporation S1AB%20SERIES_I2102.pdf Description: DIODE GEN PURP 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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1.5SMC39AH 1.5SMC39AH Taiwan Semiconductor Corporation 1.5SMCH SERIES_B2207.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC39CAH 1.5SMC39CAH Taiwan Semiconductor Corporation 1.5SMCH SERIES_B2207.pdf Description: TVS DIODE 33.3VWM 53.9V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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1.5SMC39CA R6G 1.5SMC39CA R6G Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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1.5SMC39 R6 1.5SMC39 R6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC39A R6G 1.5SMC39A R6G Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC39C R6 1.5SMC39C R6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC39 M6G 1.5SMC39 M6G Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC39A R7 1.5SMC39A R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC39C R7 1.5SMC39C R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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MBRF1550CT C0G MBRF1550CT C0G Taiwan Semiconductor Corporation MBRF1535CT%20SERIES_J2105.pdf Description: DIODE ARRAY SCHOTT 50V ITO220AB
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MBRF1550CTHC0G MBRF1550CTHC0G Taiwan Semiconductor Corporation MBRF1535CT%20SERIES_J2105.pdf Description: DIODE ARRAY SCHOTT 50V ITO220AB
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1.5KE43CAH 1.5KE43CAH Taiwan Semiconductor Corporation Description: TVS DIODE 36.8VWM 59.3VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE24AH P6KE24AH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 20.5VWM 33.2V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 19A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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P4SMA18CAH P4SMA18CAH Taiwan Semiconductor Corporation P4SMAH SERIES_A2102.pdf Description: TVS DIODE 15.3VWM 25.5V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1SS400 RSG 1SS400 RSG Taiwan Semiconductor Corporation Description: DIODE GP 100V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 500mV, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
товару немає в наявності
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1SS400 RKG 1SS400 RKG Taiwan Semiconductor Corporation 1SS400_D2206.pdf Description: DIODE STD 100V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 500mV, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
товару немає в наявності
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P4KE15CAH P4KE15CAH Taiwan Semiconductor Corporation Description: TVS DIODE 12.8VWM 21.2VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
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1.5KE13CAH 1.5KE13CAH Taiwan Semiconductor Corporation Description: TVS DIODE 11.1VWM 18.2VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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MBRS30H45CT MNG MBRS30H45CT MNG Taiwan Semiconductor Corporation MBRS30H45CT_K2103.pdf Description: DIODE ARR SCHOTT 45V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
товару немає в наявності
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TSM60NC390CI C0G TSM60NC390CI C0G Taiwan Semiconductor Corporation TSM60NC390CI_C2209.pdf Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 25 V
на замовлення 3955 шт:
термін постачання 21-31 дні (днів)
3+135.01 грн
50+104.50 грн
100+85.97 грн
500+72.84 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TQM110NB04CR RLG TQM110NB04CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 40V 12A/54A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1352 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+38.81 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TQM110NB04CR RLG TQM110NB04CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 40V 12A/54A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1352 pF @ 20 V
Qualification: AEC-Q101
на замовлення 4738 шт:
термін постачання 21-31 дні (днів)
4+94.10 грн
10+73.91 грн
100+57.50 грн
500+45.74 грн
1000+37.26 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TQM070NB04CR RLG TQM070NB04CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 40V 15A/75A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 20 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+34.50 грн
5000+31.64 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TQM070NB04CR RLG TQM070NB04CR RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 40V 15A/75A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
4+83.46 грн
10+65.71 грн
100+51.11 грн
500+40.66 грн
1000+33.12 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PGSMAJ28CA R3G PGSMAJ28CA R3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 28VWM 45.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 400W
Power Line Protection: No
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PGSMAJ28CAHF3G PGSMAJ28CAHF3G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 28VWM 45.4VC DO214AC
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PGSMAJ28CAHF4G PGSMAJ28CAHF4G Taiwan Semiconductor Corporation PGSMAJ_Series_Rev_A1707.pdf Description: TVS DIODE 28VWM 45.4VC DO214AC
товару немає в наявності
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1.5KE12AH 1.5KE12AH Taiwan Semiconductor Corporation Description: TVS DIODE 10.2VWM 16.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 94A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
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SR206 SR206 Taiwan Semiconductor Corporation SR202 SERIES_L2105.pdf Description: DIODE SCHOTTKY 60V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
3500+5.48 грн
Мінімальне замовлення: 3500
В кошику  од. на суму  грн.
SR206H SR206H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 60V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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SR206 B0G SR206 B0G Taiwan Semiconductor Corporation SR202%20SERIES_L2105.pdf Description: DIODE SCHOTTKY 60V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товару немає в наявності
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SR206HB0G SR206HB0G Taiwan Semiconductor Corporation SR202%20SERIES_L2105.pdf Description: DIODE SCHOTTKY 60V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
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1PGSMA4762HR3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4762HR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 82V 1.25W DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+14.09 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
1PGSMA4762HR3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4762HR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 82V 1.25W DO214AC
на замовлення 3356 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+32.73 грн
12+27.18 грн
100+20.31 грн
500+14.98 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
1PGSMA4762 R3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4762 R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 82V 1.25W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62.2 V
товару немає в наявності
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1PGSMA4762 R3G 1PGSMA%20SERIES_B2102.pdf
1PGSMA4762 R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 82V 1.25W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62.2 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+31.09 грн
13+25.29 грн
100+18.84 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
1PGSMA4762 1PGSMA%20SERIES_B2102.pdf
1PGSMA4762
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 82V 1.25W DO214AC
товару немає в наявності
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1PGSMA4762H 1PGSMA%20SERIES_B2102.pdf
1PGSMA4762H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 82V 1.25W DO214AC
товару немає в наявності
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1SMA4762 1SMA4737%20SERIES_P2102.pdf
1SMA4762
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 82V 1.25W DO214AC
товару немає в наявності
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1SMA4762H 1SMA4737%20SERIES_P2102.pdf
1SMA4762H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 82V 1.25W DO214AC
товару немає в наявності
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1SMA4762 R3G 1SMA4737%20SERIES_P2102.pdf
1SMA4762 R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 82V 1.25W DO214AC
товару немає в наявності
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1SMA4762HR3G 1SMA4737%20SERIES_P2102.pdf
1SMA4762HR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 82V 1.25W DO214AC
товару немає в наявності
В кошику  од. на суму  грн.
SS14MH SS13MH SERIES_A2103.pdf
SS14MH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
товару немає в наявності
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SS14MH SS13MH SERIES_A2103.pdf
SS14MH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Qualification: AEC-Q101
товару немає в наявності
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TSM1NB60CH C5G TSM1NB60CH_A2308.pdf
TSM1NB60CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 1A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
на замовлення 14962 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+82.64 грн
75+34.12 грн
150+30.33 грн
525+23.40 грн
1050+21.20 грн
2025+19.44 грн
5025+17.15 грн
10050+15.92 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
S1JFSHMWG S1DFS%20SERIES_C2103.pdf
S1JFSHMWG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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S1JFSHMWG S1DFS%20SERIES_C2103.pdf
S1JFSHMWG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 801 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+39.28 грн
12+28.37 грн
100+17.67 грн
500+11.35 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
HS1JFS pdf.php?pn=HS1JFS
HS1JFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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HS1JFS pdf.php?pn=HS1JFS
HS1JFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 6948 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.55 грн
14+22.61 грн
100+11.40 грн
500+9.48 грн
1000+7.38 грн
2000+6.60 грн
5000+6.35 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SRF10200 SRF1020 SERIES_L2105.pdf
SRF10200
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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SR1203 A0G SR1202%20SERIES_G2105.pdf
SR1203 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 12A DO201AD
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SR1203 SR1202 SERIES_G2105.pdf
SR1203
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 12A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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SR1203HA0G SR1202%20SERIES_G2105.pdf
SR1203HA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 12A DO201AD
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SMDJ10CAH
SMDJ10CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AB
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SMDJ10CA M6G SMDJH%20SERIES_B2104.pdf
SMDJ10CA M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AB
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SMDJ10CAHR7G SMDJH%20SERIES_B2104.pdf
SMDJ10CAHR7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AB
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SMDJ10CAHM6G SMDJH%20SERIES_B2104.pdf
SMDJ10CAHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO214AB
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S1MBH pdf.php?pn=S1MBH
S1MBH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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S1MBHR5G S1AB%20SERIES_I2102.pdf
S1MBHR5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 6800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3400+11.58 грн
Мінімальне замовлення: 3400
В кошику  од. на суму  грн.
S1MB R5G S1AB%20SERIES_I2102.pdf
S1MB R5G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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1.5SMC39AH 1.5SMCH SERIES_B2207.pdf
1.5SMC39AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC39CAH 1.5SMCH SERIES_B2207.pdf
1.5SMC39CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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1.5SMC39CA R6G
1.5SMC39CA R6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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1.5SMC39 R6
1.5SMC39 R6
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC39A R6G
1.5SMC39A R6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC39C R6
1.5SMC39C R6
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC39 M6G
1.5SMC39 M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC39A R7
1.5SMC39A R7
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC39C R7
1.5SMC39C R7
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
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MBRF1550CT C0G MBRF1535CT%20SERIES_J2105.pdf
MBRF1550CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 50V ITO220AB
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MBRF1550CTHC0G MBRF1535CT%20SERIES_J2105.pdf
MBRF1550CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 50V ITO220AB
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1.5KE43CAH
1.5KE43CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE24AH P6KE SERIES_P2203.pdf
P6KE24AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20.5VWM 33.2V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 19A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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P4SMA18CAH P4SMAH SERIES_A2102.pdf
P4SMA18CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 16.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1SS400 RSG
1SS400 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 100V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 500mV, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
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1SS400 RKG 1SS400_D2206.pdf
1SS400 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STD 100V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 500mV, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
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P4KE15CAH
P4KE15CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8VWM 21.2VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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1.5KE13CAH
1.5KE13CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 11.1VWM 18.2VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MBRS30H45CT MNG MBRS30H45CT_K2103.pdf
MBRS30H45CT MNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 45V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
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TSM60NC390CI C0G TSM60NC390CI_C2209.pdf
TSM60NC390CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 25 V
на замовлення 3955 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+135.01 грн
50+104.50 грн
100+85.97 грн
500+72.84 грн
Мінімальне замовлення: 3
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TQM110NB04CR RLG
TQM110NB04CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1352 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+38.81 грн
Мінімальне замовлення: 2500
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TQM110NB04CR RLG
TQM110NB04CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1352 pF @ 20 V
Qualification: AEC-Q101
на замовлення 4738 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+94.10 грн
10+73.91 грн
100+57.50 грн
500+45.74 грн
1000+37.26 грн
Мінімальне замовлення: 4
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TQM070NB04CR RLG
TQM070NB04CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 15A/75A 8PDFNU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 20 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+34.50 грн
5000+31.64 грн
Мінімальне замовлення: 2500
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TQM070NB04CR RLG
TQM070NB04CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 15A/75A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3125 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+83.46 грн
10+65.71 грн
100+51.11 грн
500+40.66 грн
1000+33.12 грн
Мінімальне замовлення: 4
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PGSMAJ28CA R3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ28CA R3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
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PGSMAJ28CAHF3G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ28CAHF3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AC
товару немає в наявності
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PGSMAJ28CAHF4G PGSMAJ_Series_Rev_A1707.pdf
PGSMAJ28CAHF4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AC
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1.5KE12AH
1.5KE12AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 94A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SR206 SR202 SERIES_L2105.pdf
SR206
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3500+5.48 грн
Мінімальне замовлення: 3500
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SR206H
SR206H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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SR206 B0G SR202%20SERIES_L2105.pdf
SR206 B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SR206HB0G SR202%20SERIES_L2105.pdf
SR206HB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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