Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (25640) > Сторінка 228 з 428
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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UDZS20B RRG | Taiwan Semiconductor Corporation |
 Description: DIODE ZENER 20V 200MW SOD323FTolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 45 nA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UDZS7V5B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.5V 200MW SOD323F Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 900 nA @ 4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UDZS12B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 200MW SOD323F Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 90 nA @ 9 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UDZS6V8B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.8V 200MW SOD323F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SMCJ40A R7 | Taiwan Semiconductor Corporation | Description: TVS DIODE 1500W DO214AB SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMCJ40AHM6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 40VWM 64.5VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES1CLHRHG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES1CHM2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES1CL RUG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES1CLHM2G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES1CLHRQG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES1CLHRTG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A SUB SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS1JLHR3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 800MA SUBSMA |
товару немає в наявності |
Мінімальне замовлення: 3600 шт В кошику од. на суму грн. | ||||||||||||||
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P4KE12AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7VC DO204AL Part Status: Active Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 16.7V Voltage - Breakdown (Min): 11.4V Unidirectional Channels: 1 Supplier Device Package: DO-204AL (DO-41) Voltage - Reverse Standoff (Typ): 10.2V Current - Peak Pulse (10/1000µs): 25A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Qualification: AEC-Q101 Grade: Automotive Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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P4KE12A B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7VC DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P4KE12A A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7VC DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P4KE12AHR1G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7VC DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P4KE12AHB0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7VC DO204AL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P4KE12AHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10.2VWM 16.7VC DO204AL Part Status: Active Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 16.7V Voltage - Breakdown (Min): 11.4V Unidirectional Channels: 1 Supplier Device Package: DO-204AL (DO-41) Voltage - Reverse Standoff (Typ): 10.2V Current - Peak Pulse (10/1000µs): 25A Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS36LWH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 3A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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SS36LWH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 3A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
на замовлення 3149 шт: термін постачання 21-31 дні (днів) |
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| HERA808G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 1000V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 2395 шт: термін постачання 21-31 дні (днів) |
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HERAF808G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 1000V 8A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 1011 шт: термін постачання 21-31 дні (днів) |
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HS1DAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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HS1DAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 6988 шт: термін постачання 21-31 дні (днів) |
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HS1JAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 13pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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HS1JAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 13pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 6145 шт: термін постачання 21-31 дні (днів) |
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HS1GAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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HS1GAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HS2JFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A SOD128 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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HS2JFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A SOD128 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 6957 шт: термін постачання 21-31 дні (днів) |
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HS2GAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 2A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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HS2GAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 2A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HS2DAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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HS2DAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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HS2JAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||||
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HS2JAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 3425 шт: термін постачання 21-31 дні (днів) |
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HS1KFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 800V 1A SOD128 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 28000 шт В кошику од. на суму грн. | ||||||||||||||
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HS1KFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 800V 1A SOD128 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
на замовлення 1288 шт: термін постачання 21-31 дні (днів) |
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HS1KAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 800V 1A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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HS1KAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 800V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HS2KFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 2A SOD128 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
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HS2KFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 2A SOD128 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
на замовлення 6800 шт: термін постачання 21-31 дні (днів) |
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HS2KAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 2A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 14000 шт В кошику од. на суму грн. | ||||||||||||||
|
|
HS2KAL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 2A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
на замовлення 3485 шт: термін постачання 21-31 дні (днів) |
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HERAF1606G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 16A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Capacitance @ Vr, F: 110pF @ 4V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
|
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 |
BZX584B13 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
BZX584B6V2 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.2V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
BZX584B10 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 10V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
BZX584B5V1 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.1V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
BZX584B4V7 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.7V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
BZX584B8V2 RSG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 150MW SOD523F |
товару немає в наявності |
Мінімальне замовлення: 104000 шт В кошику од. на суму грн. | ||||||||||||||
|
|
BZX584B6V8 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.8V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
BZX584B9V1 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 9.1V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
BZX584B7V5 RSG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.5V 150MW SOD523F |
товару немає в наявності |
Мінімальне замовлення: 104000 шт В кошику од. на суму грн. | ||||||||||||||
|
|
BZX584B11 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 11V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
BZX584B8V2 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
BZX584B5V1 RSG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.1V 150MW SOD523F |
товару немає в наявності |
Мінімальне замовлення: 104000 шт В кошику од. на суму грн. | ||||||||||||||
|
|
BZX584B12 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
|
BZX584B15 RKG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 15V 150MW SOD523F |
товару немає в наявності |
В кошику од. на суму грн. |
| UDZS20B RRG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 15 V
Description: DIODE ZENER 20V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| UDZS7V5B RRG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 900 nA @ 4 V
Description: DIODE ZENER 7.5V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 900 nA @ 4 V
товару немає в наявності
В кошику
од. на суму грн.
| UDZS12B RRG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 90 nA @ 9 V
Description: DIODE ZENER 12V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 90 nA @ 9 V
товару немає в наявності
В кошику
од. на суму грн.
| UDZS6V8B RRG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 200MW SOD323F
Description: DIODE ZENER 6.8V 200MW SOD323F
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ40A R7 |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Description: TVS DIODE 1500W DO214AB SMC
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ40AHM6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40VWM 64.5VC DO214AB
Description: TVS DIODE 40VWM 64.5VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| ES1CLHRHG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Description: DIODE GEN PURP 150V 1A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| ES1CHM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A DO214AC
Description: DIODE GEN PURP 150V 1A DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| ES1CL RUG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Description: DIODE GEN PURP 150V 1A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| ES1CLHM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Description: DIODE GEN PURP 150V 1A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| ES1CLHRQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Description: DIODE GEN PURP 150V 1A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| ES1CLHRTG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Description: DIODE GEN PURP 150V 1A SUB SMA
товару немає в наявності
В кошику
од. на суму грн.
| RS1JLHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 800MA SUBSMA
Description: DIODE GEN PURP 600V 800MA SUBSMA
товару немає в наявності
Мінімальне замовлення: 3600 шт
В кошику
од. на суму грн.
| P4KE12AH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 25A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 25A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| P4KE12A B0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| P4KE12A A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| P4KE12AHR1G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| P4KE12AHB0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
товару немає в наявності
В кошику
од. на суму грн.
| P4KE12AHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 25A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 16.7V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 10.2V
Current - Peak Pulse (10/1000µs): 25A
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
товару немає в наявності
В кошику
од. на суму грн.
| SS36LWH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SS36LWH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
на замовлення 3149 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.30 грн |
| 16+ | 19.78 грн |
| 100+ | 12.52 грн |
| 500+ | 8.78 грн |
| 1000+ | 7.82 грн |
| 2000+ | 7.01 грн |
| HERA808G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE STANDARD 1000V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 2395 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.73 грн |
| 50+ | 54.52 грн |
| 100+ | 48.60 грн |
| 500+ | 35.86 грн |
| 1000+ | 32.72 грн |
| 2000+ | 30.08 грн |
| HERAF808G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE STANDARD 1000V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 1011 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.77 грн |
| 50+ | 52.95 грн |
| 100+ | 47.19 грн |
| 500+ | 34.81 грн |
| 1000+ | 31.76 грн |
| HS1DAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| HS1DAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 6988 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.51 грн |
| 14+ | 22.07 грн |
| 100+ | 11.14 грн |
| 500+ | 9.26 грн |
| 1000+ | 7.21 грн |
| 2000+ | 6.45 грн |
| 5000+ | 6.20 грн |
| HS1JAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| HS1JAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 6145 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.51 грн |
| 14+ | 22.07 грн |
| 100+ | 11.14 грн |
| 500+ | 9.26 грн |
| 1000+ | 7.21 грн |
| 2000+ | 6.45 грн |
| 5000+ | 6.20 грн |
| HS1GAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| HS1GAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE STANDARD 400V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| HS2JFS |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| HS2JFS |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 6957 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 28.55 грн |
| 15+ | 21.30 грн |
| 100+ | 12.77 грн |
| 500+ | 11.10 грн |
| 1000+ | 7.55 грн |
| 2000+ | 6.95 грн |
| 5000+ | 6.55 грн |
| HS2GAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE STANDARD 400V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| HS2GAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE STANDARD 400V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| HS2DAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| HS2DAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 28.55 грн |
| 15+ | 21.30 грн |
| 100+ | 12.77 грн |
| 500+ | 11.10 грн |
| 1000+ | 7.55 грн |
| 2000+ | 6.95 грн |
| 5000+ | 6.55 грн |
| HS2JAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| HS2JAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 3425 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.37 грн |
| 16+ | 19.39 грн |
| 100+ | 11.63 грн |
| 500+ | 10.11 грн |
| 1000+ | 6.87 грн |
| HS1KFS |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE STANDARD 800V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 28000 шт
В кошику
од. на суму грн.
| HS1KFS |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE STANDARD 800V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 1288 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.58 грн |
| 21+ | 14.89 грн |
| 100+ | 9.35 грн |
| 500+ | 6.50 грн |
| 1000+ | 5.77 грн |
| HS1KAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE STANDARD 800V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| HS1KAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE STANDARD 800V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| HS2KFS |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| HS2KFS |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 6800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.30 грн |
| 14+ | 22.68 грн |
| 100+ | 11.43 грн |
| 500+ | 9.51 грн |
| 1000+ | 7.40 грн |
| 2000+ | 6.62 грн |
| 5000+ | 6.37 грн |
| HS2KAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 14000 шт
В кошику
од. на суму грн.
| HS2KAL |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 3485 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.72 грн |
| 15+ | 21.76 грн |
| 100+ | 10.96 грн |
| 500+ | 9.12 грн |
| 1000+ | 7.10 грн |
| 2000+ | 6.35 грн |
| HERAF1606G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 82.46 грн |
| 50+ | 63.86 грн |
| 100+ | 50.60 грн |
| 500+ | 40.26 грн |
| 1000+ | 32.79 грн |
| BZX584B13 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 150MW SOD523F
Description: DIODE ZENER 13V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B6V2 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 150MW SOD523F
Description: DIODE ZENER 6.2V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B10 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 150MW SOD523F
Description: DIODE ZENER 10V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B5V1 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 150MW SOD523F
Description: DIODE ZENER 5.1V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B4V7 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 150MW SOD523F
Description: DIODE ZENER 4.7V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B8V2 RSG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 150MW SOD523F
Description: DIODE ZENER 8.2V 150MW SOD523F
товару немає в наявності
Мінімальне замовлення: 104000 шт
В кошику
од. на суму грн.
| BZX584B6V8 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 150MW SOD523F
Description: DIODE ZENER 6.8V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B9V1 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 150MW SOD523F
Description: DIODE ZENER 9.1V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B7V5 RSG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 150MW SOD523F
Description: DIODE ZENER 7.5V 150MW SOD523F
товару немає в наявності
Мінімальне замовлення: 104000 шт
В кошику
од. на суму грн.
| BZX584B11 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 150MW SOD523F
Description: DIODE ZENER 11V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B8V2 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 150MW SOD523F
Description: DIODE ZENER 8.2V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B5V1 RSG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 150MW SOD523F
Description: DIODE ZENER 5.1V 150MW SOD523F
товару немає в наявності
Мінімальне замовлення: 104000 шт
В кошику
од. на суму грн.
| BZX584B12 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 150MW SOD523F
Description: DIODE ZENER 12V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.
| BZX584B15 RKG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 150MW SOD523F
Description: DIODE ZENER 15V 150MW SOD523F
товару немає в наявності
В кошику
од. на суму грн.