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SMF43A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_smf_datasheet.pdf.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 47.8V; 2.9A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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MURF1640CTH TAIWAN SEMICONDUCTOR MURF1620CT SERIES_K2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 16A
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MURF8L60H TAIWAN SEMICONDUCTOR MURF8L60_C2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; ITO220AC; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Reverse recovery time: 65ns
Application: automotive industry
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BYG20D TAIWAN SEMICONDUCTOR BYG20D SERIES_F2102.pdf byg20d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Reverse recovery time: 75ns
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BYG20DH TAIWAN SEMICONDUCTOR BYG20DH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: superfast switching
Reverse recovery time: 75ns
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SMCJ18CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 53A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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1.5KE16CA 1.5KE16CA TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_1_5ke_datasheet.pdf?assetguid=9d02c7d2-86a5-4bff-9251-966d6af02bf7 Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 16V; 67A; bidirectional; ±5%; DO201; reel,tape; 1.5kW
Type of diode: TVS
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 67A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: reel; tape
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Tolerance: ±5%
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SMBJ13A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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ES3FH TAIWAN SEMICONDUCTOR Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 3A; 35ns; SMC; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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TSM2314CX RFG TSM2314CX RFG TAIWAN SEMICONDUCTOR TSM2314_E15.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Kind of package: tape
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 33mΩ
Power dissipation: 0.8W
Drain current: 4.9A
Gate-source voltage: ±12V
Drain-source voltage: 20V
на замовлення 186 шт:
термін постачання 14-30 дні (днів)
8+61.41 грн
11+38.75 грн
50+27.34 грн
100+23.73 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
MBRAD20200H TAIWAN SEMICONDUCTOR MBRAD20200H_A2303.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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P6SMB24A P6SMB24A TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 4279 шт:
термін постачання 14-30 дні (днів)
63+7.23 грн
71+5.95 грн
100+5.39 грн
250+4.99 грн
500+4.76 грн
1000+4.28 грн
3000+4.19 грн
Мінімальне замовлення: 63
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P6SMB24CA M4G P6SMB24CA M4G TAIWAN SEMICONDUCTOR P6SMB_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
35+12.66 грн
Мінімальне замовлення: 35
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P6SMB6.8CA P6SMB6.8CA TAIWAN SEMICONDUCTOR P6SMB SERIES_Q2209.pdf P6SMB.pdf tvs-diodes-p6smb-series-datasheet?assetguid=f5388c46-7505-4228-a009-0af00fd10435 P6SMB6.8CA.PDF SMBP6SMB6V8CAC.pdf description Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 318 шт:
термін постачання 14-30 дні (днів)
42+10.84 грн
48+8.89 грн
100+7.88 грн
Мінімальне замовлення: 42
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P6SMB6.8A P6SMB6.8A TAIWAN SEMICONDUCTOR P6SMB_ser.pdf description Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 350 шт:
термін постачання 14-30 дні (днів)
12+39.74 грн
19+23.23 грн
100+14.84 грн
Мінімальне замовлення: 12
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BZW06-33 BZW06-33 TAIWAN SEMICONDUCTOR BZW06_SER.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 33V; 11.1A; unidirectional; ±5%; DO204AC; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 33V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO204AC
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: BZW06
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BZW06-33 TAIWAN SEMICONDUCTOR bzw065v8.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 37.1V; 11.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
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BZW06-33B R0 BZW06-33B R0 TAIWAN SEMICONDUCTOR BZW06-33B-R0.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO204AC; 600W
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO204AC
Mounting: THT
Leakage current: 1µA
на замовлення 545 шт:
термін постачання 14-30 дні (днів)
26+17.70 грн
32+13.25 грн
100+11.66 грн
500+11.15 грн
Мінімальне замовлення: 26
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BZW06-33B TAIWAN SEMICONDUCTOR cd00000694.pdf bzw065v8.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1V; 11.1A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
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BZW06-13B BZW06-13B TAIWAN SEMICONDUCTOR bzw065v8.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
на замовлення 209 шт:
термін постачання 14-30 дні (днів)
10+46.96 грн
12+35.89 грн
13+32.79 грн
100+22.73 грн
Мінімальне замовлення: 10
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SS215 TAIWAN SEMICONDUCTOR SS22 SERIES_N2306.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.95V
Type of diode: Schottky rectifying
Kind of package: reel; tape
Load current: 2A
Max. off-state voltage: 150V
Case: SMB
Semiconductor structure: single diode
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BZX55C4V3 R0G BZX55C4V3 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 803 шт:
термін постачання 14-30 дні (днів)
36+12.64 грн
50+8.47 грн
100+5.06 грн
250+4.06 грн
500+3.41 грн
Мінімальне замовлення: 36
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TSCDT20065G1 TAIWAN SEMICONDUCTOR pdf.php?pn=TSCDT20065G1 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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SFF508GH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2.5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 5A
Reverse recovery time: 35ns
Application: automotive industry
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TQM138KCU RFG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 300mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: tape
Kind of channel: enhancement
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S10MCH TAIWAN SEMICONDUCTOR S10GCH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 10A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
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UG54GSH TAIWAN SEMICONDUCTOR UG54GS_C2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; Ifsm: 65A; DO15,DO204AC; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 65A
Case: DO15; DO204AC
Max. forward voltage: 1.1V
Reverse recovery time: 20ns
Application: automotive industry
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TUAS8K TAIWAN SEMICONDUCTOR TUAS8D SERIES_C2109.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.1V
Kind of package: reel; tape
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TUAS8KH TAIWAN SEMICONDUCTOR TUAS8DH%20SERIES_A2111.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
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SMA6J30AH TAIWAN SEMICONDUCTOR SMA6J%20SERIES_E2102.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: SMA6J
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TSM60NE069PW C0G TAIWAN SEMICONDUCTOR TSM60NE069PW_A2403.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
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SMAJ75AH TAIWAN SEMICONDUCTOR pdf.php?pn=SMAJ75AH Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3V; 3.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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SMA4F60AH TAIWAN SEMICONDUCTOR Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.1...74.1V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMA4F
Tolerance: ±5%
Kind of package: reel; tape
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BZT52B12-G RHG BZT52B12-G RHG TAIWAN SEMICONDUCTOR BZT52B2V4-G SERIES_H2002.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 12V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 2300 шт:
термін постачання 14-30 дні (днів)
45+10.30 грн
85+5.23 грн
105+4.16 грн
500+4.02 грн
Мінімальне замовлення: 45
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SFF505GH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 2.5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 2.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 5A
Reverse recovery time: 35ns
Application: automotive industry
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SFS1605GH TAIWAN SEMICONDUCTOR Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8Ax2; 35ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. forward voltage: 1.3V
Max. load current: 16A
Kind of package: reel; tape
Application: automotive industry
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UR4KB60-B TAIWAN SEMICONDUCTOR UR4KB100-B_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 135A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 135A
Version: flat
Case: D3K
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
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TSM60NE069CIT C0G TAIWAN SEMICONDUCTOR TSM60NE069CIT_A2403.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 89W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 89W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
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TQM138KCX RFG TAIWAN SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: tape
Kind of channel: enhancement
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HS5JH TAIWAN SEMICONDUCTOR Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 75ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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TESD5V0V4UCU6 RFG TESD5V0V4UCU6 RFG TAIWAN SEMICONDUCTOR TESD5V0V4UCU6_D2109.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 6A; 150W; unidirectional; ESD; SOT363; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5V
Leakage current: 3µA
Number of channels: 4
Application: Ethernet; USB
Kind of package: reel; tape
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GBPC3506 TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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GBPC3506W TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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ABS6 TAIWAN SEMICONDUCTOR ABS2_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
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ABS6 RGG ABS6 RGG TAIWAN SEMICONDUCTOR ABS2_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
5+90.32 грн
Мінімальне замовлення: 5
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TSP15U50S TAIWAN SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 50V; 15A; reel,tape
Case: TO277A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.56V
Load current: 15A
Max. off-state voltage: 50V
Semiconductor structure: single diode
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TS2940CW50 RPG TS2940CW50 RPG TAIWAN SEMICONDUCTOR TS2940_D15.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD
Manufacturer series: TS2940
Case: SOT223
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 10...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 5V
Mounting: SMD
на замовлення 887 шт:
термін постачання 14-30 дні (днів)
9+56.00 грн
10+46.96 грн
25+44.45 грн
100+41.93 грн
500+37.74 грн
Мінімальне замовлення: 9
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TS2940CP33 ROG TS2940CP33 ROG TAIWAN SEMICONDUCTOR TS2940_D15.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±0.2%
Manufacturer series: TS2940
Case: DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 0...26V
Output current: 1A
Tolerance: ±0.2%
Voltage drop: 0.6V
Number of channels: 1
Output voltage: 3.3V
Mounting: SMD
на замовлення 149 шт:
термін постачання 14-30 дні (днів)
5+96.64 грн
10+65.41 грн
25+59.54 грн
50+56.19 грн
100+52.83 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TS2940CW33 RPG TS2940CW33 RPG TAIWAN SEMICONDUCTOR TS2940_D15.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Manufacturer series: TS2940
Case: SOT223
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 8.3...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 3.3V
Mounting: SMD
на замовлення 438 шт:
термін постачання 14-30 дні (днів)
7+65.93 грн
10+44.62 грн
25+40.42 грн
50+37.74 грн
100+35.73 грн
250+34.13 грн
Мінімальне замовлення: 7
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TS2940CZ33 C0G TS2940CZ33 C0G TAIWAN SEMICONDUCTOR pdf.php?pn=TS2940CZ33 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT
Kind of package: tube
Manufacturer series: TS2940
Case: TO220
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 8.3...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 3.3V
Mounting: THT
на замовлення 85 шт:
термін постачання 14-30 дні (днів)
4+149.92 грн
5+125.80 грн
25+111.54 грн
Мінімальне замовлення: 4
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TS2940CZ50 C0G TS2940CZ50 C0G TAIWAN SEMICONDUCTOR pdf.php?pn=TS2940CZ50 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; tube
Kind of package: tube
Manufacturer series: TS2940
Case: TO220
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 10...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 5V
Mounting: THT
на замовлення 185 шт:
термін постачання 14-30 дні (днів)
3+160.76 грн
5+118.25 грн
10+100.64 грн
Мінімальне замовлення: 3
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TS2940CM50 RNG TS2940CM50 RNG TAIWAN SEMICONDUCTOR TS2940_D15.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2%
Manufacturer series: TS2940
Case: D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 10...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 5V
Mounting: SMD
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
3+214.05 грн
10+129.15 грн
25+109.02 грн
Мінімальне замовлення: 3
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TSM2N7002AKCU RFG TAIWAN SEMICONDUCTOR TSM2N7002AKCU_A2111.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 298mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
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TSM2N7002AKDCU6 RFG TAIWAN SEMICONDUCTOR TSM2N7002AKDCU6_A2111.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.24W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
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US1JH TAIWAN SEMICONDUCTOR US1AH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
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US1J M2G TAIWAN SEMICONDUCTOR US1A%20SERIES_N2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMA; 1.7V
Type of diode: rectifying
Case: SMA
Max. forward voltage: 1.7V
на замовлення 52500 шт:
термін постачання 14-30 дні (днів)
28736+1.27 грн
Мінімальне замовлення: 28736
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HS1K R3G TAIWAN SEMICONDUCTOR HS1A%20SERIES_M2401.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 75ns; DO214AC,SMA; 1.7V; 30A
Mounting: SMD
Type of diode: rectifying
Reverse recovery time: 75ns
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
на замовлення 34200 шт:
термін постачання 14-30 дні (днів)
28012+1.31 грн
Мінімальне замовлення: 28012
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MBR1045 MBR1045 TAIWAN SEMICONDUCTOR MBR1045%20N0615%20REV.A.pdf littelfuse_power_semiconductor_schottky_diode_mbr1045_datasheet.pdf?assetguid=161372d2-6740-425c-9996-267cb4ce6a3a FAIRS45617-1.pdf?t.download=true&u=5oefqw mbr1035-d.pdf MBR%28B%291035_45.pdf ds23009.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Case: TO220AC
Forward voltage at If: 840mV
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SFF1008GAH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 35ns
Application: automotive industry
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SFF1008GH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 35ns
Application: automotive industry
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SMF43A littelfuse_tvs_diode_smf_datasheet.pdf.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 47.8V; 2.9A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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MURF1640CTH MURF1620CT SERIES_K2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: ITO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 16A
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MURF8L60H MURF8L60_C2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; ITO220AC; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Reverse recovery time: 65ns
Application: automotive industry
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BYG20D BYG20D SERIES_F2102.pdf byg20d.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Features of semiconductor devices: superfast switching
Reverse recovery time: 75ns
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BYG20DH BYG20DH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1.5A; 75ns; SMA; Ufmax: 1.4V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.4V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: superfast switching
Reverse recovery time: 75ns
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SMCJ18CA SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷22.1V; 53A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 53A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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1.5KE16CA littelfuse_tvs_diode_1_5ke_datasheet.pdf?assetguid=9d02c7d2-86a5-4bff-9251-966d6af02bf7
1.5KE16CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 16V; 67A; bidirectional; ±5%; DO201; reel,tape; 1.5kW
Type of diode: TVS
Max. off-state voltage: 13.6V
Breakdown voltage: 16V
Max. forward impulse current: 67A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: reel; tape
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Tolerance: ±5%
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SMBJ13A SMBJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 29A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 29A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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ES3FH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 3A; 35ns; SMC; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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TSM2314CX RFG TSM2314_E15.pdf
TSM2314CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 800mW; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Kind of package: tape
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 33mΩ
Power dissipation: 0.8W
Drain current: 4.9A
Gate-source voltage: ±12V
Drain-source voltage: 20V
на замовлення 186 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+61.41 грн
11+38.75 грн
50+27.34 грн
100+23.73 грн
Мінімальне замовлення: 8
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MBRAD20200H MBRAD20200H_A2303.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Kind of package: reel; tape
Application: automotive industry
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P6SMB24A P6SMB_ser.pdf
P6SMB24A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 4279 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.23 грн
71+5.95 грн
100+5.39 грн
250+4.99 грн
500+4.76 грн
1000+4.28 грн
3000+4.19 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
P6SMB24CA M4G P6SMB_ser.pdf
P6SMB24CA M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
35+12.66 грн
Мінімальне замовлення: 35
В кошику  од. на суму  грн.
P6SMB6.8CA description P6SMB SERIES_Q2209.pdf P6SMB.pdf tvs-diodes-p6smb-series-datasheet?assetguid=f5388c46-7505-4228-a009-0af00fd10435 P6SMB6.8CA.PDF SMBP6SMB6V8CAC.pdf
P6SMB6.8CA
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 318 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
42+10.84 грн
48+8.89 грн
100+7.88 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
P6SMB6.8A description P6SMB_ser.pdf
P6SMB6.8A
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 60A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 60A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 2mA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 350 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+39.74 грн
19+23.23 грн
100+14.84 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BZW06-33 BZW06_SER.pdf
BZW06-33
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 33V; 11.1A; unidirectional; ±5%; DO204AC; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 33V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO204AC
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Manufacturer series: BZW06
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BZW06-33 bzw065v8.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 37.1V; 11.1A; unidirectional; ±5%; DO15; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
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BZW06-33B R0 BZW06-33B-R0.pdf
BZW06-33B R0
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 11.1A; bidirectional; ±5%; DO204AC; 600W
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO204AC
Mounting: THT
Leakage current: 1µA
на замовлення 545 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
26+17.70 грн
32+13.25 грн
100+11.66 грн
500+11.15 грн
Мінімальне замовлення: 26
В кошику  од. на суму  грн.
BZW06-33B cd00000694.pdf bzw065v8.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1V; 11.1A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Manufacturer series: BZW06
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BZW06-13B bzw065v8.pdf
BZW06-13B
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 14.3V; 28A; bidirectional; ±5%; DO15; 0.6kW; BZW06
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Peak pulse power dissipation: 0.6kW
Manufacturer series: BZW06
Max. forward impulse current: 28A
на замовлення 209 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+46.96 грн
12+35.89 грн
13+32.79 грн
100+22.73 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SS215 SS22 SERIES_N2306.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.95V
Type of diode: Schottky rectifying
Kind of package: reel; tape
Load current: 2A
Max. off-state voltage: 150V
Case: SMB
Semiconductor structure: single diode
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BZX55C4V3 R0G
BZX55C4V3 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 803 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.64 грн
50+8.47 грн
100+5.06 грн
250+4.06 грн
500+3.41 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
TSCDT20065G1 pdf.php?pn=TSCDT20065G1
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
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SFF508GH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 2.5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 2.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 5A
Reverse recovery time: 35ns
Application: automotive industry
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TQM138KCU RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; 300mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: tape
Kind of channel: enhancement
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S10MCH S10GCH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; SMC; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 10A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
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UG54GSH UG54GS_C2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; Ifsm: 65A; DO15,DO204AC; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 65A
Case: DO15; DO204AC
Max. forward voltage: 1.1V
Reverse recovery time: 20ns
Application: automotive industry
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TUAS8K TUAS8D SERIES_C2109.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.1V
Kind of package: reel; tape
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TUAS8KH TUAS8DH%20SERIES_A2111.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; TO277A; Ufmax: 1.1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: single diode
Case: TO277A
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
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SMA6J30AH SMA6J%20SERIES_E2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: SMA6J
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TSM60NE069PW C0G TSM60NE069PW_A2403.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
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SMAJ75AH pdf.php?pn=SMAJ75AH
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 83.3V; 3.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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SMA4F60AH
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 60V
Breakdown voltage: 67.1...74.1V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMA flat
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMA4F
Tolerance: ±5%
Kind of package: reel; tape
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BZT52B12-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B12-G RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 12V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 2300 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
45+10.30 грн
85+5.23 грн
105+4.16 грн
500+4.02 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
SFF505GH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 2.5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 2.5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 5A
Reverse recovery time: 35ns
Application: automotive industry
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SFS1605GH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 8Ax2; 35ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: D2PAK
Max. forward voltage: 1.3V
Max. load current: 16A
Kind of package: reel; tape
Application: automotive industry
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UR4KB60-B UR4KB100-B_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 135A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 135A
Version: flat
Case: D3K
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
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TSM60NE069CIT C0G TSM60NE069CIT_A2403.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 89W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 89W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
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TQM138KCX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: tape
Kind of channel: enhancement
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HS5JH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 75ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
Application: automotive industry
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TESD5V0V4UCU6 RFG TESD5V0V4UCU6_D2109.pdf
TESD5V0V4UCU6 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 6A; 150W; unidirectional; ESD; SOT363; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6V
Max. forward impulse current: 6A
Peak pulse power dissipation: 0.15kW
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: SOT363
Max. off-state voltage: 5V
Leakage current: 3µA
Number of channels: 4
Application: Ethernet; USB
Kind of package: reel; tape
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GBPC3506 GBPC15_25_35_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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GBPC3506W GBPC15_25_35_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPCW
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: in-tray
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ABS6 ABS2_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
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ABS6 RGG ABS2_ser.pdf
ABS6 RGG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+90.32 грн
Мінімальне замовлення: 5
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TSP15U50S
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 50V; 15A; reel,tape
Case: TO277A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.56V
Load current: 15A
Max. off-state voltage: 50V
Semiconductor structure: single diode
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TS2940CW50 RPG TS2940_D15.pdf
TS2940CW50 RPG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD
Manufacturer series: TS2940
Case: SOT223
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 10...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 5V
Mounting: SMD
на замовлення 887 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+56.00 грн
10+46.96 грн
25+44.45 грн
100+41.93 грн
500+37.74 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
TS2940CP33 ROG TS2940_D15.pdf
TS2940CP33 ROG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±0.2%
Manufacturer series: TS2940
Case: DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 0...26V
Output current: 1A
Tolerance: ±0.2%
Voltage drop: 0.6V
Number of channels: 1
Output voltage: 3.3V
Mounting: SMD
на замовлення 149 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+96.64 грн
10+65.41 грн
25+59.54 грн
50+56.19 грн
100+52.83 грн
Мінімальне замовлення: 5
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TS2940CW33 RPG TS2940_D15.pdf
TS2940CW33 RPG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Manufacturer series: TS2940
Case: SOT223
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 8.3...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 3.3V
Mounting: SMD
на замовлення 438 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+65.93 грн
10+44.62 грн
25+40.42 грн
50+37.74 грн
100+35.73 грн
250+34.13 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
TS2940CZ33 C0G pdf.php?pn=TS2940CZ33
TS2940CZ33 C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT
Kind of package: tube
Manufacturer series: TS2940
Case: TO220
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 8.3...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 3.3V
Mounting: THT
на замовлення 85 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+149.92 грн
5+125.80 грн
25+111.54 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TS2940CZ50 C0G pdf.php?pn=TS2940CZ50
TS2940CZ50 C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; tube
Kind of package: tube
Manufacturer series: TS2940
Case: TO220
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 10...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 5V
Mounting: THT
на замовлення 185 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+160.76 грн
5+118.25 грн
10+100.64 грн
Мінімальне замовлення: 3
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TS2940CM50 RNG TS2940_D15.pdf
TS2940CM50 RNG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2%
Manufacturer series: TS2940
Case: D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Input voltage: 10...26V
Output current: 0.8A
Tolerance: ±2%
Voltage drop: 0.8V
Number of channels: 1
Output voltage: 5V
Mounting: SMD
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+214.05 грн
10+129.15 грн
25+109.02 грн
Мінімальне замовлення: 3
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TSM2N7002AKCU RFG TSM2N7002AKCU_A2111.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240mA; 298mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 298mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
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TSM2N7002AKDCU6 RFG TSM2N7002AKDCU6_A2111.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 220mA; 240mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.24W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
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US1JH US1AH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Capacitance: 10pF
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US1J M2G US1A%20SERIES_N2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMA; 1.7V
Type of diode: rectifying
Case: SMA
Max. forward voltage: 1.7V
на замовлення 52500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
28736+1.27 грн
Мінімальне замовлення: 28736
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HS1K R3G HS1A%20SERIES_M2401.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 75ns; DO214AC,SMA; 1.7V; 30A
Mounting: SMD
Type of diode: rectifying
Reverse recovery time: 75ns
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
на замовлення 34200 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
28012+1.31 грн
Мінімальне замовлення: 28012
В кошику  од. на суму  грн.
MBR1045 MBR1045%20N0615%20REV.A.pdf littelfuse_power_semiconductor_schottky_diode_mbr1045_datasheet.pdf?assetguid=161372d2-6740-425c-9996-267cb4ce6a3a FAIRS45617-1.pdf?t.download=true&u=5oefqw mbr1035-d.pdf MBR%28B%291035_45.pdf ds23009.pdf
MBR1045
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Case: TO220AC
Forward voltage at If: 840mV
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SFF1008GAH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 35ns
Application: automotive industry
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SFF1008GH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; ITO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 10A
Reverse recovery time: 35ns
Application: automotive industry
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