| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| TLP2363(TPR.E(O | TOSHIBA |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: open collector Insulation voltage: 3.75kV Case: SO6 Turn-on time: 80ns Turn-off time: 80ns Max. off-state voltage: 800mV Output voltage: 6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TCK22946G,LF(S | TOSHIBA |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Ch: 1; Active logical level: high Type of integrated circuit: power switch Kind of integrated circuit: high-side Number of channels: 1 Active logical level: high Operating temperature: -40...85°C Supply voltage: 5.5V Integrated circuit features: thermal protection |
на замовлення 70000 шт: термін постачання 21-30 дні (днів) |
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SSM6K403TU,LF(T | TOSHIBA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Power dissipation: 0.5W Case: UF6 Gate-source voltage: ±10V On-state resistance: 66mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Gate charge: 16.8nC |
на замовлення 271 шт: термін постачання 21-30 дні (днів) |
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SSM6K504NU,LF(T | TOSHIBA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Power dissipation: 1.25W Case: uDFN6 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Gate charge: 4.8nC Pulsed drain current: 18A |
на замовлення 1659 шт: термін постачання 21-30 дні (днів) |
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| SSM6L12TU,LF(T | TOSHIBA |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 30/-20V; 0.5/-0.5A; Idm: 1.5A Kind of channel: enhancement Version: ESD Type of transistor: N/P-MOSFET Kind of package: reel; tape Case: UF6 Mounting: SMD Polarisation: unipolar Pulsed drain current: 1.5A Drain-source voltage: 30/-20V Drain current: 0.5/-0.5A On-state resistance: 180/430mΩ Power dissipation: 0.5W Gate-source voltage: ±12V; ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SSM6J501NU,LF | TOSHIBA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -10A Pulsed drain current: -30A Power dissipation: 1W Case: uDFN6 Gate-source voltage: ±8V On-state resistance: 43mΩ Mounting: SMD Gate charge: 29.9nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SSM6J503NU,LF(T | TOSHIBA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Case: uDFN6 Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Gate charge: 12.8nC On-state resistance: 89.6mΩ Power dissipation: 1W Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SSM6J502NU,LF(T | TOSHIBA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6; ESD Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET Kind of package: reel; tape Case: uDFN6 Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Gate charge: 24.8nC On-state resistance: 60.5mΩ Power dissipation: 1W Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SSM6N15AFU,LF(T | TOSHIBA |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 0.1A; 0.3W; SOT363 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Kind of package: reel; tape Case: SOT363 Mounting: SMD Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.1A On-state resistance: 6Ω Power dissipation: 0.3W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SSM6L39TU,LF(T | TOSHIBA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; 20V; 1.6A; 500mW; double Kind of channel: enhancement Type of transistor: N/P-MOSFET Mounting: SMD Operating temperature: -55...150°C Drain-source voltage: 20V Drain current: 1.6A On-state resistance: 87mΩ Power dissipation: 0.5W Semiconductor structure: double |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| SSM6P40TU,LF(T | TOSHIBA |
Category: Transistors - Unclassified Description: SSM6P40TU,LF(T |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| SSM6K361NU,LF | TOSHIBA |
Category: UnclassifiedDescription: SSM6K361NU,LF |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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TLP7920(B.F(O | TOSHIBA |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: isolation amplifier Insulation voltage: 5kV Case: DIP8 Slew rate: 20kV/μs |
на замовлення 86 шт: термін постачання 21-30 дні (днів) |
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TK49N65W,S1F(S | TOSHIBA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 49.2A; 400W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 49.2A Power dissipation: 400W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 160nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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T2N7002AK,LM(T | TOSHIBA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.76A Power dissipation: 0.32W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.2Ω Mounting: SMD Gate charge: 0.35nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TK100A06N1,S4X(S | TOSHIBA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 263A; 45W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 263A Case: TO220FP Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 45W Gate charge: 0.14µC |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
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TK100E06N1,S1X(S | TOSHIBA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 100A; 255W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 255W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TK62N60X,S1F(S | TOSHIBA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 61.8A; Idm: 247A; 400W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 61.8A Pulsed drain current: 247A Power dissipation: 400W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 33mΩ Mounting: THT Gate charge: 135nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1SS181,LF(T | TOSHIBA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 100mA; 4ns; SOT346; Ufmax: 1.2V; Ifsm: 2A Type of diode: switching Case: SOT346 Mounting: SMD Max. off-state voltage: 85V Load current: 0.1A Semiconductor structure: common anode; double Max. forward voltage: 1.2V Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.15W Capacitance: 4pF Reverse recovery time: 4ns Max. load current: 0.3A Features of semiconductor devices: ultrafast switching |
на замовлення 16805 шт: термін постачання 21-30 дні (днів) |
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| TLP5754(TP,E(T | TOSHIBA |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: totem pole Insulation voltage: 5kV Case: SO6L Turn-on time: 15ns Turn-off time: 8ns Slew rate: 35kV/μs Number of pins: 6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP5702(D4-TP.E(T | TOSHIBA |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 25kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: totem pole Insulation voltage: 5kV Case: SO6L Turn-on time: 15ns Turn-off time: 8ns Slew rate: 25kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP5702(E | TOSHIBA |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 5kV; SO6L; Urmax: 800mV Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 5kV Case: SO6L Turn-on time: 0.2µs Turn-off time: 200ns Max. off-state voltage: 800mV Output voltage: 35V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP5702(TP.E(T | TOSHIBA |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 5kV; SO6L; Urmax: 800mV Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 5kV Case: SO6L Turn-on time: 0.2µs Turn-off time: 200ns Max. off-state voltage: 800mV Output voltage: 35V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP5702H(D4-TP.E(T | TOSHIBA |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 100kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: totem pole Insulation voltage: 5kV Case: SO6L Turn-on time: 37ns Turn-off time: 50ns Slew rate: 100kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP5702H(D4TP4.E(T | TOSHIBA |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 50kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: totem pole Insulation voltage: 5kV Case: SO6L Turn-on time: 37ns Turn-off time: 50ns Slew rate: 50kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP2110(V4-TP,F) | TOSHIBA |
Category: Optocouplers - digital output Description: Optocoupler; PIN: 8 Type of optocoupler: optocoupler Number of pins: 8 |
на замовлення 12500 шт: термін постачання 21-30 дні (днів) |
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TLP3062A(D4.F(O | TOSHIBA |
Category: OptotriacsDescription: Optotriac; 5kV; DIP6; Ch: 1 Type of optocoupler: optotriac Insulation voltage: 5kV Case: DIP6 Max. off-state voltage: 0.6kV Mounting: THT Number of channels: 1 Trigger current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP3062A(D4TP5.F(O | TOSHIBA |
Category: OptotriacsDescription: Optotriac; 5kV; Uout: 600V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5kV Output voltage: 600V Kind of output: zero voltage crossing driver Case: DIP6 Max. off-state voltage: 5V Mounting: SMD Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP3062AF(D4TP4F(O | TOSHIBA |
Category: OptotriacsDescription: Optotriac; 5kV; Uout: 600V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5kV Output voltage: 600V Kind of output: zero voltage crossing driver Case: DIP6 Max. off-state voltage: 5V Mounting: SMD Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP3062AF(TP4.F(O | TOSHIBA |
Category: OptotriacsDescription: Optotriac; 5kV; Uout: 600V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5kV Output voltage: 600V Kind of output: zero voltage crossing driver Case: DIP6 Max. off-state voltage: 5V Mounting: SMD Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TPH3R704PL,L1Q(M | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 40V; 92A; 81W; SMT Type of transistor: N-MOSFET Technology: MOSFET Polarisation: N Drain-source voltage: 40V Drain current: 92A Power dissipation: 81W Gate-source voltage: 20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 27nC Kind of channel: enhancement Electrical mounting: SMT |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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SSM3J328R,LF(T | TOSHIBA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Power dissipation: 1W Case: SOT23F Gate-source voltage: ±8V On-state resistance: 88.4mΩ Mounting: SMD Gate charge: 12.8nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 2270 шт: термін постачання 21-30 дні (днів) |
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| TLP5214(D4-TP.E(O | TOSHIBA |
Category: Optocouplers - othersDescription: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SO16L; Urmax: 800mV Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 5kV Case: SO16L Turn-on time: 150ns Turn-off time: 150ns Max. off-state voltage: 800mV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLP5214(TP.E(O | TOSHIBA |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 2; OUT: IGBT driver; Uinsul: 5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: IGBT driver Insulation voltage: 5kV Collector-emitter voltage: 30V Case: SO16-W Turn-on time: 32ns Turn-off time: 18ns Slew rate: 35kV/μs Collector current: 3.5mA Number of pins: 16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TLP5214A(D4.E(O | TOSHIBA |
Category: Optocouplers - othersDescription: Optocoupler; SMD; Ch: 1; 5kV; SO16L Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 5kV Case: SO16L Turn-on time: 150ns Turn-off time: 150ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP5214A(TP.E(O | TOSHIBA |
Category: Optocouplers - othersDescription: Optocoupler; SMD; Ch: 1; 5kV; SO16L Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 5kV Case: SO16L Turn-on time: 150ns Turn-off time: 150ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TK8P60W,RVQ | TOSHIBA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8A; 80W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 80W Case: DPAK Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 18.5nC On-state resistance: 0.5Ω Drain current: 8A Drain-source voltage: 600V Gate-source voltage: ±30V |
на замовлення 1957 шт: термін постачання 21-30 дні (днів) |
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| TLP7930(F(O | TOSHIBA |
Category: Optocouplers - othersDescription: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: isolation amplifier Insulation voltage: 5kV Case: DIP8 Slew rate: 15kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP7830(D4-TP4.E(O | TOSHIBA |
Category: Optocouplers - othersDescription: Optocoupler; SMD; Ch: 1; OUT: isolation amplifier; 5kV; SOP8L Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: isolation amplifier Insulation voltage: 5kV Case: SOP8L Slew rate: 15kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP7830(TP4.E(O | TOSHIBA |
Category: Optocouplers - othersDescription: Optocoupler; SMD; Ch: 1; OUT: isolation amplifier; 5kV; SOP8L Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: isolation amplifier Insulation voltage: 5kV Case: SOP8L Slew rate: 15kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP7930(D4-LF1.F(O | TOSHIBA |
Category: Optocouplers - othersDescription: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: isolation amplifier Insulation voltage: 5kV Case: DIP8 Slew rate: 15kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP7930(D4-TP1.F(O | TOSHIBA |
Category: Optocouplers - othersDescription: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: isolation amplifier Insulation voltage: 5kV Case: DIP8 Slew rate: 15kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP7930(D4.F(O | TOSHIBA |
Category: Optocouplers - othersDescription: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: isolation amplifier Insulation voltage: 5kV Case: DIP8 Slew rate: 15kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TK60S10N1L,LQ(O | TOSHIBA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 180W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 180A Power dissipation: 180W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.14mΩ Mounting: SMD Gate charge: 60nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP385(GR.E(T | TOSHIBA |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SO6L Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-300%@5mA Collector-emitter voltage: 80V Case: SO6L Turn-on time: 3µs Turn-off time: 3µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 2SC4738-GR,LF(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 150mA; 120mW; SSM Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.12W Case: SSM Current gain: 120 Mounting: SMD Frequency: 80MHz Application: automotive industry |
на замовлення 18000 шт: термін постачання 21-30 дні (днів) |
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BAS516,H3F(T | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD523; Ufmax: 1.25V; 150mW Mounting: SMD Reverse recovery time: 3ns Case: SOD523 Kind of package: reel; tape Power dissipation: 0.15W Load current: 0.25A Max. forward impulse current: 1A Max. load current: 0.5A Max. forward voltage: 1.25V Semiconductor structure: single diode Max. off-state voltage: 100V Type of diode: switching Capacitance: 0.35pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS516,L3F(T | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD523; Ufmax: 1.25V; 150mW Mounting: SMD Reverse recovery time: 3ns Case: SOD523 Kind of package: reel; tape Power dissipation: 0.15W Load current: 0.25A Max. forward impulse current: 1A Max. load current: 0.5A Max. forward voltage: 1.25V Semiconductor structure: single diode Max. off-state voltage: 100V Type of diode: switching Capacitance: 0.35pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GT30J121(Q) | TOSHIBA |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 30A; 170W; TO3PN Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 170W Case: TO3PN Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Kind of package: tube Turn-on time: 240ns Turn-off time: 430ns |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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| 1SS402 | TOSHIBA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 25V; 50mA; USQ; Ufmax: 550mV; Ifsm: 1A; 100mW Mounting: SMD Type of diode: switching Capacitance: 3.9pF Load current: 50mA Power dissipation: 0.1W Max. load current: 100mA Max. forward voltage: 0.55V Max. forward impulse current: 1A Max. off-state voltage: 25V Kind of package: reel; tape Semiconductor structure: double independent Features of semiconductor devices: fast switching Case: USQ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
TPHR9003NL | TOSHIBA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 60A; 78W; SOP8A Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SOP8A Polarisation: unipolar Gate charge: 74nC On-state resistance: 1.4mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 60A Power dissipation: 78W Kind of package: reel; tape |
на замовлення 228 шт: термін постачання 21-30 дні (днів) |
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| TPHR9003NL,L1Q(M | TOSHIBA |
Category: Transistors - Unclassified Description: TPHR9003NL,L1Q(M |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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| TC7SH08FU,LJ(CT | TOSHIBA |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; PRO; -40÷125°C; 2uA Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Manufacturer series: PRO Operating temperature: -40...125°C Quiescent current: 2µA Number of outputs: 1 |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| TC7SH08F,LJ(CT | TOSHIBA |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC74A; -40÷125°C; 2uA; VHC Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC74A Operating temperature: -40...125°C Quiescent current: 2µA Number of outputs: 1 Family: VHC |
на замовлення 15150 шт: термін постачання 21-30 дні (днів) |
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TK10A60W,S4VX(M | TOSHIBA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67 Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 20nC On-state resistance: 327mΩ Drain current: 9.7A Gate-source voltage: ±30V Power dissipation: 30W Drain-source voltage: 600V Kind of package: tube Case: SC67 Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP2770(D4.E(O | TOSHIBA |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; 20Mbps; SO6L; 35kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: totem pole Insulation voltage: 5kV Case: SO6L Turn-on time: 1.3ns Turn-off time: 1ns Transfer rate: 20Mbps Collector current: 400µA Slew rate: 35kV/μs |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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TLP2704(E(T | TOSHIBA |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: open collector; 5kV; SO6L; 20kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: open collector Insulation voltage: 5kV Case: SO6L Slew rate: 20kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TLP2701(E(T | TOSHIBA |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 5kV; 0.02Mbps Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: open collector Insulation voltage: 5kV Case: SO6L Turn-on time: 8µs Turn-off time: 15µs Transfer rate: 20kbps CTR@If: 50%@1mA Collector-emitter voltage: 40V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP2704(TP,E(T | TOSHIBA |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: open collector; 5kV; SO6L; 20kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: open collector Insulation voltage: 5kV Case: SO6L Slew rate: 20kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP2735(E(O | TOSHIBA |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 50kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: totem pole Insulation voltage: 5kV Case: SO6L Turn-on time: 4ns Turn-off time: 4ns Slew rate: 50kV/μs |
товару немає в наявності |
В кошику од. на суму грн. |
| TLP2363(TPR.E(O |
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Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 80ns
Turn-off time: 80ns
Max. off-state voltage: 800mV
Output voltage: 6V
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 80ns
Turn-off time: 80ns
Max. off-state voltage: 800mV
Output voltage: 6V
товару немає в наявності
В кошику
од. на суму грн.
| TCK22946G,LF(S |
Виробник: TOSHIBA
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; Active logical level: high
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Active logical level: high
Operating temperature: -40...85°C
Supply voltage: 5.5V
Integrated circuit features: thermal protection
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; Active logical level: high
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Active logical level: high
Operating temperature: -40...85°C
Supply voltage: 5.5V
Integrated circuit features: thermal protection
на замовлення 70000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 17.61 грн |
| SSM6K403TU,LF(T |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 0.5W
Case: UF6
Gate-source voltage: ±10V
On-state resistance: 66mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Gate charge: 16.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 0.5W
Case: UF6
Gate-source voltage: ±10V
On-state resistance: 66mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Gate charge: 16.8nC
на замовлення 271 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 15.13 грн |
| 42+ | 9.52 грн |
| 100+ | 8.41 грн |
| SSM6K504NU,LF(T |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Power dissipation: 1.25W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Gate charge: 4.8nC
Pulsed drain current: 18A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Power dissipation: 1.25W
Case: uDFN6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Gate charge: 4.8nC
Pulsed drain current: 18A
на замовлення 1659 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 11.28 грн |
| 50+ | 8.73 грн |
| 100+ | 7.86 грн |
| 500+ | 7.62 грн |
| SSM6L12TU,LF(T |
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Виробник: TOSHIBA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 0.5/-0.5A; Idm: 1.5A
Kind of channel: enhancement
Version: ESD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Case: UF6
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 1.5A
Drain-source voltage: 30/-20V
Drain current: 0.5/-0.5A
On-state resistance: 180/430mΩ
Power dissipation: 0.5W
Gate-source voltage: ±12V; ±20V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 0.5/-0.5A; Idm: 1.5A
Kind of channel: enhancement
Version: ESD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Case: UF6
Mounting: SMD
Polarisation: unipolar
Pulsed drain current: 1.5A
Drain-source voltage: 30/-20V
Drain current: 0.5/-0.5A
On-state resistance: 180/430mΩ
Power dissipation: 0.5W
Gate-source voltage: ±12V; ±20V
товару немає в наявності
В кошику
од. на суму грн.
| SSM6J501NU,LF |
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Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10A
Pulsed drain current: -30A
Power dissipation: 1W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 29.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; Idm: -30A; 1W; uDFN6; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10A
Pulsed drain current: -30A
Power dissipation: 1W
Case: uDFN6
Gate-source voltage: ±8V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 29.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| SSM6J503NU,LF(T |
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Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: uDFN6
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Gate charge: 12.8nC
On-state resistance: 89.6mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: uDFN6
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Gate charge: 12.8nC
On-state resistance: 89.6mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
товару немає в наявності
В кошику
од. на суму грн.
| SSM6J502NU,LF(T |
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Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: uDFN6
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Gate charge: 24.8nC
On-state resistance: 60.5mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: uDFN6
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Gate charge: 24.8nC
On-state resistance: 60.5mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
товару немає в наявності
В кошику
од. на суму грн.
| SSM6N15AFU,LF(T |
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Виробник: TOSHIBA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.1A; 0.3W; SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Case: SOT363
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
On-state resistance: 6Ω
Power dissipation: 0.3W
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.1A; 0.3W; SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Case: SOT363
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
On-state resistance: 6Ω
Power dissipation: 0.3W
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| SSM6L39TU,LF(T |
Виробник: TOSHIBA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; 20V; 1.6A; 500mW; double
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Operating temperature: -55...150°C
Drain-source voltage: 20V
Drain current: 1.6A
On-state resistance: 87mΩ
Power dissipation: 0.5W
Semiconductor structure: double
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; 20V; 1.6A; 500mW; double
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Operating temperature: -55...150°C
Drain-source voltage: 20V
Drain current: 1.6A
On-state resistance: 87mΩ
Power dissipation: 0.5W
Semiconductor structure: double
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.23 грн |
| SSM6P40TU,LF(T |
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.74 грн |
| SSM6K361NU,LF |
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на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 14.70 грн |
| TLP7920(B.F(O |
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Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 20kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 20kV/μs
на замовлення 86 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 502.53 грн |
| 5+ | 442.83 грн |
| 25+ | 405.53 грн |
| TK49N65W,S1F(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 49.2A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49.2A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 160nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 49.2A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49.2A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 160nC
товару немає в наявності
В кошику
од. на суму грн.
| T2N7002AK,LM(T |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.76A
Power dissipation: 0.32W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.76A; 320mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.76A
Power dissipation: 0.32W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.2Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| TK100A06N1,S4X(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 263A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 263A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 45W
Gate charge: 0.14µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 263A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 263A
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 45W
Gate charge: 0.14µC
на замовлення 43 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 115.07 грн |
| 10+ | 101.58 грн |
| TK100E06N1,S1X(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 255W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 255W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 255W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 255W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| TK62N60X,S1F(S |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; Idm: 247A; 400W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Pulsed drain current: 247A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; Idm: 247A; 400W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61.8A
Pulsed drain current: 247A
Power dissipation: 400W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
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| 1SS181,LF(T |
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Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT346; Ufmax: 1.2V; Ifsm: 2A
Type of diode: switching
Case: SOT346
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.1A
Semiconductor structure: common anode; double
Max. forward voltage: 1.2V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.15W
Capacitance: 4pF
Reverse recovery time: 4ns
Max. load current: 0.3A
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT346; Ufmax: 1.2V; Ifsm: 2A
Type of diode: switching
Case: SOT346
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.1A
Semiconductor structure: common anode; double
Max. forward voltage: 1.2V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.15W
Capacitance: 4pF
Reverse recovery time: 4ns
Max. load current: 0.3A
Features of semiconductor devices: ultrafast switching
на замовлення 16805 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 180+ | 2.39 грн |
| 210+ | 1.92 грн |
| 500+ | 1.70 грн |
| 1445+ | 1.68 грн |
| 3000+ | 1.62 грн |
| TLP5754(TP,E(T |
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Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 35kV/μs
Number of pins: 6
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 35kV/μs
Number of pins: 6
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| TLP5702(D4-TP.E(T |
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Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 25kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 25kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 25kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 25kV/μs
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| TLP5702(E |
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Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 5kV; SO6L; Urmax: 800mV
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 0.2µs
Turn-off time: 200ns
Max. off-state voltage: 800mV
Output voltage: 35V
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 5kV; SO6L; Urmax: 800mV
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 0.2µs
Turn-off time: 200ns
Max. off-state voltage: 800mV
Output voltage: 35V
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| TLP5702(TP.E(T |
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Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 5kV; SO6L; Urmax: 800mV
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 0.2µs
Turn-off time: 200ns
Max. off-state voltage: 800mV
Output voltage: 35V
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 5kV; SO6L; Urmax: 800mV
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 0.2µs
Turn-off time: 200ns
Max. off-state voltage: 800mV
Output voltage: 35V
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| TLP5702H(D4-TP.E(T |
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Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 100kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 37ns
Turn-off time: 50ns
Slew rate: 100kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 100kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 37ns
Turn-off time: 50ns
Slew rate: 100kV/μs
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| TLP5702H(D4TP4.E(T |
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Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 37ns
Turn-off time: 50ns
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 37ns
Turn-off time: 50ns
Slew rate: 50kV/μs
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| TLP2110(V4-TP,F) |
Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; PIN: 8
Type of optocoupler: optocoupler
Number of pins: 8
Category: Optocouplers - digital output
Description: Optocoupler; PIN: 8
Type of optocoupler: optocoupler
Number of pins: 8
на замовлення 12500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 106.83 грн |
| TLP3062A(D4.F(O |
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Виробник: TOSHIBA
Category: Optotriacs
Description: Optotriac; 5kV; DIP6; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5kV
Case: DIP6
Max. off-state voltage: 0.6kV
Mounting: THT
Number of channels: 1
Trigger current: 10mA
Category: Optotriacs
Description: Optotriac; 5kV; DIP6; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5kV
Case: DIP6
Max. off-state voltage: 0.6kV
Mounting: THT
Number of channels: 1
Trigger current: 10mA
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| TLP3062A(D4TP5.F(O |
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Виробник: TOSHIBA
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 5V
Mounting: SMD
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 5V
Mounting: SMD
Number of channels: 1
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| TLP3062AF(D4TP4F(O |
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Виробник: TOSHIBA
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 5V
Mounting: SMD
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 5V
Mounting: SMD
Number of channels: 1
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| TLP3062AF(TP4.F(O |
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Виробник: TOSHIBA
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 5V
Mounting: SMD
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 5V
Mounting: SMD
Number of channels: 1
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| TPH3R704PL,L1Q(M |
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 92A; 81W; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 92A
Power dissipation: 81W
Gate-source voltage: 20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhancement
Electrical mounting: SMT
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 92A; 81W; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 92A
Power dissipation: 81W
Gate-source voltage: 20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 27nC
Kind of channel: enhancement
Electrical mounting: SMT
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 46.41 грн |
| SSM3J328R,LF(T |
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Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 88.4mΩ
Mounting: SMD
Gate charge: 12.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±8V
On-state resistance: 88.4mΩ
Mounting: SMD
Gate charge: 12.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2270 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.32 грн |
| 25+ | 16.19 грн |
| 31+ | 12.86 грн |
| 50+ | 11.03 грн |
| 100+ | 9.52 грн |
| 152+ | 6.11 грн |
| 419+ | 5.79 грн |
| 1000+ | 5.56 грн |
| TLP5214(D4-TP.E(O |
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Виробник: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SO16L; Urmax: 800mV
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SO16L
Turn-on time: 150ns
Turn-off time: 150ns
Max. off-state voltage: 800mV
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SO16L; Urmax: 800mV
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SO16L
Turn-on time: 150ns
Turn-off time: 150ns
Max. off-state voltage: 800mV
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| TLP5214(TP.E(O |
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Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: IGBT driver; Uinsul: 5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: IGBT driver
Insulation voltage: 5kV
Collector-emitter voltage: 30V
Case: SO16-W
Turn-on time: 32ns
Turn-off time: 18ns
Slew rate: 35kV/μs
Collector current: 3.5mA
Number of pins: 16
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: IGBT driver; Uinsul: 5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: IGBT driver
Insulation voltage: 5kV
Collector-emitter voltage: 30V
Case: SO16-W
Turn-on time: 32ns
Turn-off time: 18ns
Slew rate: 35kV/μs
Collector current: 3.5mA
Number of pins: 16
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| TLP5214A(D4.E(O |
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Виробник: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 5kV; SO16L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SO16L
Turn-on time: 150ns
Turn-off time: 150ns
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 5kV; SO16L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SO16L
Turn-on time: 150ns
Turn-off time: 150ns
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| TLP5214A(TP.E(O |
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Виробник: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 5kV; SO16L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SO16L
Turn-on time: 150ns
Turn-off time: 150ns
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 5kV; SO16L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SO16L
Turn-on time: 150ns
Turn-off time: 150ns
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| TK8P60W,RVQ |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 80W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 80W
Case: DPAK
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18.5nC
On-state resistance: 0.5Ω
Drain current: 8A
Drain-source voltage: 600V
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 80W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 80W
Case: DPAK
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18.5nC
On-state resistance: 0.5Ω
Drain current: 8A
Drain-source voltage: 600V
Gate-source voltage: ±30V
на замовлення 1957 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 71.79 грн |
| 7+ | 59.52 грн |
| 25+ | 53.97 грн |
| 100+ | 50.79 грн |
| TLP7930(F(O |
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Виробник: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
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| TLP7830(D4-TP4.E(O |
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Виробник: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: isolation amplifier; 5kV; SOP8L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: SOP8L
Slew rate: 15kV/μs
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: isolation amplifier; 5kV; SOP8L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: SOP8L
Slew rate: 15kV/μs
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| TLP7830(TP4.E(O |
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Виробник: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: isolation amplifier; 5kV; SOP8L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: SOP8L
Slew rate: 15kV/μs
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: isolation amplifier; 5kV; SOP8L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: SOP8L
Slew rate: 15kV/μs
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| TLP7930(D4-LF1.F(O |
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Виробник: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
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| TLP7930(D4-TP1.F(O |
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Виробник: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
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| TLP7930(D4.F(O |
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Виробник: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: isolation amplifier; 5kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: isolation amplifier
Insulation voltage: 5kV
Case: DIP8
Slew rate: 15kV/μs
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| TK60S10N1L,LQ(O |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
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| TLP385(GR.E(T |
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Виробник: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SO6L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-300%@5mA
Collector-emitter voltage: 80V
Case: SO6L
Turn-on time: 3µs
Turn-off time: 3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 80V; SO6L
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-300%@5mA
Collector-emitter voltage: 80V
Case: SO6L
Turn-on time: 3µs
Turn-off time: 3µs
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| 2SC4738-GR,LF(T |
Виробник: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 150mA; 120mW; SSM
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.12W
Case: SSM
Current gain: 120
Mounting: SMD
Frequency: 80MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 150mA; 120mW; SSM
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.12W
Case: SSM
Current gain: 120
Mounting: SMD
Frequency: 80MHz
Application: automotive industry
на замовлення 18000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.18 грн |
| BAS516,H3F(T |
Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD523; Ufmax: 1.25V; 150mW
Mounting: SMD
Reverse recovery time: 3ns
Case: SOD523
Kind of package: reel; tape
Power dissipation: 0.15W
Load current: 0.25A
Max. forward impulse current: 1A
Max. load current: 0.5A
Max. forward voltage: 1.25V
Semiconductor structure: single diode
Max. off-state voltage: 100V
Type of diode: switching
Capacitance: 0.35pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD523; Ufmax: 1.25V; 150mW
Mounting: SMD
Reverse recovery time: 3ns
Case: SOD523
Kind of package: reel; tape
Power dissipation: 0.15W
Load current: 0.25A
Max. forward impulse current: 1A
Max. load current: 0.5A
Max. forward voltage: 1.25V
Semiconductor structure: single diode
Max. off-state voltage: 100V
Type of diode: switching
Capacitance: 0.35pF
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| BAS516,L3F(T |
Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD523; Ufmax: 1.25V; 150mW
Mounting: SMD
Reverse recovery time: 3ns
Case: SOD523
Kind of package: reel; tape
Power dissipation: 0.15W
Load current: 0.25A
Max. forward impulse current: 1A
Max. load current: 0.5A
Max. forward voltage: 1.25V
Semiconductor structure: single diode
Max. off-state voltage: 100V
Type of diode: switching
Capacitance: 0.35pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 3ns; SOD523; Ufmax: 1.25V; 150mW
Mounting: SMD
Reverse recovery time: 3ns
Case: SOD523
Kind of package: reel; tape
Power dissipation: 0.15W
Load current: 0.25A
Max. forward impulse current: 1A
Max. load current: 0.5A
Max. forward voltage: 1.25V
Semiconductor structure: single diode
Max. off-state voltage: 100V
Type of diode: switching
Capacitance: 0.35pF
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| GT30J121(Q) |
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Виробник: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 170W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 170W
Case: TO3PN
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Turn-on time: 240ns
Turn-off time: 430ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 170W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 170W
Case: TO3PN
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Kind of package: tube
Turn-on time: 240ns
Turn-off time: 430ns
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 255.54 грн |
| 3+ | 214.27 грн |
| 6+ | 168.24 грн |
| 1SS402 |
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Виробник: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 25V; 50mA; USQ; Ufmax: 550mV; Ifsm: 1A; 100mW
Mounting: SMD
Type of diode: switching
Capacitance: 3.9pF
Load current: 50mA
Power dissipation: 0.1W
Max. load current: 100mA
Max. forward voltage: 0.55V
Max. forward impulse current: 1A
Max. off-state voltage: 25V
Kind of package: reel; tape
Semiconductor structure: double independent
Features of semiconductor devices: fast switching
Case: USQ
Category: SMD universal diodes
Description: Diode: switching; SMD; 25V; 50mA; USQ; Ufmax: 550mV; Ifsm: 1A; 100mW
Mounting: SMD
Type of diode: switching
Capacitance: 3.9pF
Load current: 50mA
Power dissipation: 0.1W
Max. load current: 100mA
Max. forward voltage: 0.55V
Max. forward impulse current: 1A
Max. off-state voltage: 25V
Kind of package: reel; tape
Semiconductor structure: double independent
Features of semiconductor devices: fast switching
Case: USQ
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| TPHR9003NL |
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Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 78W; SOP8A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOP8A
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 1.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 78W
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 78W; SOP8A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOP8A
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 1.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 78W
Kind of package: reel; tape
на замовлення 228 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 179.48 грн |
| 5+ | 149.99 грн |
| 7+ | 141.26 грн |
| 19+ | 134.12 грн |
| 25+ | 132.53 грн |
| 100+ | 128.56 грн |
| TPHR9003NL,L1Q(M |
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 41.11 грн |
| TC7SH08FU,LJ(CT |
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Виробник: TOSHIBA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; PRO; -40÷125°C; 2uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Manufacturer series: PRO
Operating temperature: -40...125°C
Quiescent current: 2µA
Number of outputs: 1
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; PRO; -40÷125°C; 2uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Manufacturer series: PRO
Operating temperature: -40...125°C
Quiescent current: 2µA
Number of outputs: 1
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.38 грн |
| TC7SH08F,LJ(CT |
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Виробник: TOSHIBA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC74A; -40÷125°C; 2uA; VHC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC74A
Operating temperature: -40...125°C
Quiescent current: 2µA
Number of outputs: 1
Family: VHC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC74A; -40÷125°C; 2uA; VHC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC74A
Operating temperature: -40...125°C
Quiescent current: 2µA
Number of outputs: 1
Family: VHC
на замовлення 15150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.03 грн |
| TK10A60W,S4VX(M |
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Виробник: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 327mΩ
Drain current: 9.7A
Gate-source voltage: ±30V
Power dissipation: 30W
Drain-source voltage: 600V
Kind of package: tube
Case: SC67
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; 30W; SC67
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 327mΩ
Drain current: 9.7A
Gate-source voltage: ±30V
Power dissipation: 30W
Drain-source voltage: 600V
Kind of package: tube
Case: SC67
Kind of channel: enhancement
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| TLP2770(D4.E(O |
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Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; 20Mbps; SO6L; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 1.3ns
Turn-off time: 1ns
Transfer rate: 20Mbps
Collector current: 400µA
Slew rate: 35kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; 20Mbps; SO6L; 35kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 1.3ns
Turn-off time: 1ns
Transfer rate: 20Mbps
Collector current: 400µA
Slew rate: 35kV/μs
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 155.55 грн |
| 5+ | 115.07 грн |
| 11+ | 87.35 грн |
| TLP2704(E(T |
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Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 5kV; SO6L; 20kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 5kV
Case: SO6L
Slew rate: 20kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 5kV; SO6L; 20kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 5kV
Case: SO6L
Slew rate: 20kV/μs
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| TLP2701(E(T |
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Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 5kV; 0.02Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 8µs
Turn-off time: 15µs
Transfer rate: 20kbps
CTR@If: 50%@1mA
Collector-emitter voltage: 40V
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 5kV; 0.02Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 8µs
Turn-off time: 15µs
Transfer rate: 20kbps
CTR@If: 50%@1mA
Collector-emitter voltage: 40V
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| TLP2704(TP,E(T |
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Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 5kV; SO6L; 20kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 5kV
Case: SO6L
Slew rate: 20kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 5kV; SO6L; 20kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 5kV
Case: SO6L
Slew rate: 20kV/μs
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| TLP2735(E(O |
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Виробник: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 4ns
Turn-off time: 4ns
Slew rate: 50kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 4ns
Turn-off time: 4ns
Slew rate: 50kV/μs
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