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| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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TPH3206PS | Transphorm |
 Description: GANFET N-CH 600V 17A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 500µA Supplier Device Package: TO-220AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V |
на замовлення 196 шт: термін постачання 21-31 дні (днів) |
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TPH3206PSB | Transphorm |
MOSFET 650V, 150mO |
на замовлення 514 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||
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TPH3206PSB | Transphorm |
Description: GANFET N-CH 650V 16A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V Power Dissipation (Max): 81W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 500µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TPH3207WS | Transphorm |
Description: GANFET N-CH 650V 50A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 8V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 2.65V @ 700µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2197 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| TPH3207WS | Transphorm |
MOSFETs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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TPH3208LSG | Transphorm |
Description: GANFET N-CH 650V 20A 3PQFN Packaging: Tube Package / Case: 3-PowerDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 8V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 300µA Supplier Device Package: 3-PQFN (8x8) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TPH3208PS | Transphorm |
MOSFET GAN FET 650V 20A TO220 |
на замовлення 301 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||
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TPH3212PS | Transphorm |
Description: GANFET N-CH 650V 27A TO220AB Rds On (Max) @ Id, Vgs: 72mOhm @ 17A, 8V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: GaNFET (Cascode Gallium Nitride FET) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.6V @ 400uA Power Dissipation (Max): 104W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. |
| TPH3206PS |
|
Виробник: Transphorm
Description: GANFET N-CH 600V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Description: GANFET N-CH 600V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
на замовлення 196 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 784.21 грн |
| 50+ | 421.41 грн |
| 100+ | 389.28 грн |
| TPH3206PSB |
|
Виробник: Transphorm
MOSFET 650V, 150mO
MOSFET 650V, 150mO
на замовлення 514 шт:
термін постачання 21-30 дні (днів)
| TPH3206PSB |
|
Виробник: Transphorm
Description: GANFET N-CH 650V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Description: GANFET N-CH 650V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
товару немає в наявності
В кошику
од. на суму грн.
| TPH3207WS |
|
Виробник: Transphorm
Description: GANFET N-CH 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 8V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.65V @ 700µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2197 pF @ 400 V
Description: GANFET N-CH 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 8V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.65V @ 700µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2197 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| TPH3208LSG |
|
Виробник: Transphorm
Description: GANFET N-CH 650V 20A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Description: GANFET N-CH 650V 20A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| TPH3208PS |
|
Виробник: Transphorm
MOSFET GAN FET 650V 20A TO220
MOSFET GAN FET 650V 20A TO220
на замовлення 301 шт:
термін постачання 21-30 дні (днів)
| TPH3212PS |
|
Виробник: Transphorm
Description: GANFET N-CH 650V 27A TO220AB
Rds On (Max) @ Id, Vgs: 72mOhm @ 17A, 8V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: GaNFET (Cascode Gallium Nitride FET)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.6V @ 400uA
Power Dissipation (Max): 104W (Tc)
Description: GANFET N-CH 650V 27A TO220AB
Rds On (Max) @ Id, Vgs: 72mOhm @ 17A, 8V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: GaNFET (Cascode Gallium Nitride FET)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.6V @ 400uA
Power Dissipation (Max): 104W (Tc)
товару немає в наявності
В кошику
од. на суму грн.
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