Продукція > TRANSPHORM > Всі товари виробника TRANSPHORM (146) > Сторінка 1 з 3
Фото | Назва | Виробник | Інформація |
Доступність |
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TDADP-USBC-65W-KIT | Transphorm |
Description: 65 W OPEN FRAME 65 W USB-C PD PO Packaging: Bulk Voltage - Output: 25V Board Type: Fully Populated Utilized IC / Part: TDADP-USBC-65W Supplied Contents: Board(s) Main Purpose: AC/DC Converter Outputs and Type: 1, Isolated Part Status: Obsolete Power - Output: 65 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TDAIO250P200-KIT | Transphorm |
![]() Packaging: Bulk Voltage - Output: 12V Voltage - Input: 90 ~ 265 VAC Current - Output: 20A Frequency - Switching: 200kHz Board Type: Fully Populated Utilized IC / Part: TPH3202PS Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side and PFC Outputs and Type: 1, Isolated Part Status: Obsolete Power - Output: 250 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TDHB-65H070L-DC | Transphorm |
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на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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TDHB-65H070L-DC | Transphorm |
![]() Packaging: Bulk Current - Output: 16A Regulator Topology: Boost, Buck, Half-Bridge Board Type: Fully Populated Utilized IC / Part: TP65H070L Supplied Contents: Board(s), Power Supply Main Purpose: DC/DC Converter Outputs and Type: 1, Non-Isolated Part Status: Active |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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TDHBG1200DC100-KIT | Transphorm |
![]() Packaging: Bulk Current - Output: 16A Regulator Topology: Boost, Buck, Half-Bridge Board Type: Fully Populated Utilized IC / Part: TP65H070L Supplied Contents: Board(s) Main Purpose: DC/DC Converter Outputs and Type: 1 Non-Isolated Output Part Status: Active Power - Output: 1.2kW Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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TDHBG1200DC100-KIT | Transphorm |
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на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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TDHBG2500P100-KIT | Transphorm |
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на замовлення 7 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TDHBG2500P100-KIT | Transphorm |
![]() Packaging: Bulk Current - Output: 16.5A Contents: Board(s), Power Supply Regulator Topology: Boost, Buck, Half-Bridge Utilized IC / Part: TPH3212PS Main Purpose: DC/DC Converter Outputs and Type: 1 Non-Isolated Output Power - Output: 2.5kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TDINV1000P100-KIT | Transphorm |
![]() Packaging: Bulk Current - Output: 10A Frequency - Switching: 100kHz Regulator Topology: Inverting Board Type: Fully Populated Utilized IC / Part: TPH3206PSB Supplied Contents: Board(s), Power Supply Main Purpose: DC/AC Converter Outputs and Type: 1, Isolated Part Status: Obsolete Power - Output: 1 kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TDINV1000P100-KIT | Transphorm |
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на замовлення 6 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TDINV3000W050B-KIT | Transphorm |
![]() Packaging: Box Voltage - Input: 400V Contents: Board(s) Frequency - Switching: 50kHz Regulator Topology: Full-Bridge Board Type: Fully Populated Utilized IC / Part: TP65H050G4WS Supplied Contents: Board(s) Main Purpose: DC/AC Inverter Outputs and Type: 1 Non-Isolated Output Part Status: Active Power - Output: 3 kW |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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TDINV3000W050B-KIT | Transphorm |
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на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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TDINV3000W050-KIT | Transphorm |
![]() Packaging: Bulk Current - Output: 22A Frequency - Switching: 50kHz Board Type: Fully Populated Utilized IC / Part: TP65H050WS Supplied Contents: Board(s), Power Supply Main Purpose: DC/AC Converter Outputs and Type: 1, Non-Isolated Power - Output: 3 kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TDINV3000W050-KIT | Transphorm |
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на замовлення 12 шт: термін постачання 246-255 дні (днів) |
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TDINV3000W50B-KIT | Transphorm |
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на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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TDINV3500P100-KIT | Transphorm |
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на замовлення 14 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TDINV3500P100-KIT | Transphorm |
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на замовлення 7 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TDPS1000E0E10-KIT | Transphorm |
![]() Packaging: Bulk Current - Output: 10A Regulator Topology: Boost, Buck, Half-Bridge Board Type: Fully Populated Utilized IC / Part: TPH3206PS Supplied Contents: Board(s), Power Supply Main Purpose: DC/DC Converter Outputs and Type: 1, Non-Isolated Part Status: Obsolete Power - Output: 1 kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TDPV1000E0C1-KIT | Transphorm |
![]() Packaging: Bulk Current - Output: 10A Frequency - Switching: 100kHz Regulator Topology: Inverting Board Type: Fully Populated Utilized IC / Part: TPH3206PS Supplied Contents: Board(s), Power Supply Main Purpose: DC/AC Converter Outputs and Type: 1, Isolated Part Status: Discontinued at Digi-Key Power - Output: 1 kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TDTTP2500B066B-KIT | Transphorm |
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на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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TDTTP2500B066B-KIT | Transphorm |
Description: EVAL BOARD FOR TP65H050G4BS Packaging: Bulk Voltage - Output: 390V Contents: Board(s) Frequency - Switching: 66kHz Board Type: Fully Populated Utilized IC / Part: TP65H050G4BS Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side and PFC Outputs and Type: 1 Non-Isolated Output Part Status: Active Power - Output: 2.5kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TDTTP2500P100-KIT | Transphorm |
![]() Packaging: Bulk Voltage - Output: 390V Voltage - Input: 85 ~ 265 VAC Contents: Board(s) Frequency - Switching: 100kHz Board Type: Fully Populated Utilized IC / Part: TPH3212PS Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side and PFC Outputs and Type: 1 Non-Isolated Output Part Status: Obsolete Power - Output: 2.5kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TDTTP2500P100-KIT | Transphorm |
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на замовлення 4 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
TDTTP4000 | Transphorm | Transphorm |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TDTTP4000W065AN-KIT | Transphorm |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TDTTP4000W065AN-KIT | Transphorm |
![]() Packaging: Bulk Voltage - Output: 387V Voltage - Input: 85 ~ 265 VAC Contents: Board(s) Frequency - Switching: 65kHz Board Type: Fully Populated Utilized IC / Part: TDTTP4000W065AN Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side and PFC Outputs and Type: 1 Non-Isolated Output Part Status: Active Power - Output: 4 kW |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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TDTTP4000W066B-KIT | Transphorm |
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на замовлення 3 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TDTTP4000W066B-KIT | Transphorm |
![]() Packaging: Bulk Voltage - Output: 390V Voltage - Input: 90 ~ 265 VAC Current - Output: 15A Contents: Board(s), Power Supply Frequency - Switching: 66kHz Board Type: Fully Populated Utilized IC / Part: TP65H035WS Supplied Contents: Board(s), Power Supply Main Purpose: AC/DC, Primary Side and PFC Outputs and Type: 1 Non-Isolated Output Power - Output: 4kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TDTTP4000W066C-KIT | Transphorm |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TDTTP4000W066C-KIT | Transphorm |
![]() Packaging: Bulk Voltage - Output: 387V Voltage - Input: 85 ~ 265 VAC Frequency - Switching: 66kHz Board Type: Fully Populated Utilized IC / Part: TP65H035WS Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side and PFC Outputs and Type: 1 Non-Isolated Output Part Status: Active Power - Output: 4kW Contents: Board(s) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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TP65H015G5WS | Transphorm |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V Power Dissipation (Max): 266W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 2mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V |
на замовлення 593 шт: термін постачання 21-31 дні (днів) |
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TP65H015G5WS | Transphorm |
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на замовлення 711 шт: термін постачання 21-30 дні (днів) |
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TP65H035G4QS | Transphorm |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 1mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TP65H035G4QS | Transphorm |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 1mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
на замовлення 1745 шт: термін постачання 21-31 дні (днів) |
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TP65H035G4QS-TR | Transphorm |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TP65H035G4WS | Transphorm |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 1mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 0 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
на замовлення 560 шт: термін постачання 21-31 дні (днів) |
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TP65H035G4WS | Transphorm |
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на замовлення 509 шт: термін постачання 21-30 дні (днів) |
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TP65H035G4WSQA | Transphorm |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 1mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 182 шт: термін постачання 21-31 дні (днів) |
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TP65H035G4WSQA | Transphorm |
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на замовлення 533 шт: термін постачання 21-30 дні (днів) |
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TP65H035WS | Transphorm |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 1mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
на замовлення 294 шт: термін постачання 21-31 дні (днів) |
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TP65H035WS | Transphorm |
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на замовлення 775 шт: термін постачання 21-30 дні (днів) |
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TP65H035WSQA | Transphorm |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V Power Dissipation (Max): 187W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-247-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
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TP65H035WSQA | Transphorm |
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на замовлення 580 шт: термін постачання 21-30 дні (днів) |
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TP65H050G4BS | Transphorm |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 700µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V |
на замовлення 114 шт: термін постачання 21-31 дні (днів) |
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TP65H050G4BS | Transphorm |
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на замовлення 55 шт: термін постачання 21-30 дні (днів) |
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TP65H050G4QS-TR | Transphorm |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 700µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V |
на замовлення 1615 шт: термін постачання 21-31 дні (днів) |
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TP65H050G4QS-TR | Transphorm |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TP65H050G4QS-TR | Transphorm |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 700µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TP65H050G4WS | Transphorm |
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на замовлення 294 шт: термін постачання 21-30 дні (днів) |
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TP65H050G4WS | Transphorm |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 700µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V |
на замовлення 439 шт: термін постачання 21-31 дні (днів) |
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TP65H050G4YS | Transphorm |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 700µA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V |
на замовлення 333 шт: термін постачання 21-31 дні (днів) |
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TP65H050G4YS | Transphorm |
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на замовлення 364 шт: термін постачання 21-30 дні (днів) |
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TP65H050WS | Transphorm |
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на замовлення 342 шт: термін постачання 21-30 дні (днів) |
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TP65H050WS | Transphorm |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 700µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V |
на замовлення 229 шт: термін постачання 21-31 дні (днів) |
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TP65H050WSQA | Transphorm |
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на замовлення 320 шт: термін постачання 21-30 дні (днів) |
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TP65H050WSQA | Transphorm |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 700µA Supplier Device Package: TO-247-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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TP65H070G4LSGB-TR | Transphorm |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 700µA Supplier Device Package: 8-PQFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TP65H070G4LSGB-TR | Transphorm |
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на замовлення 2821 шт: термін постачання 21-30 дні (днів) |
|
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TP65H070G4LSGB-TR | Transphorm |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 700µA Supplier Device Package: 8-PQFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V |
на замовлення 2592 шт: термін постачання 21-31 дні (днів) |
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TP65H070G4LSG-TR | Transphorm |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 700µA Supplier Device Package: 3-PQFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. |
TDADP-USBC-65W-KIT |
Виробник: Transphorm
Description: 65 W OPEN FRAME 65 W USB-C PD PO
Packaging: Bulk
Voltage - Output: 25V
Board Type: Fully Populated
Utilized IC / Part: TDADP-USBC-65W
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 65 W
Description: 65 W OPEN FRAME 65 W USB-C PD PO
Packaging: Bulk
Voltage - Output: 25V
Board Type: Fully Populated
Utilized IC / Part: TDADP-USBC-65W
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 65 W
товару немає в наявності
В кошику
од. на суму грн.
TDAIO250P200-KIT |
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Виробник: Transphorm
Description: 250W PFC + LLC POWER SUPPLY KIT
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 20A
Frequency - Switching: 200kHz
Board Type: Fully Populated
Utilized IC / Part: TPH3202PS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 250 W
Description: 250W PFC + LLC POWER SUPPLY KIT
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 20A
Frequency - Switching: 200kHz
Board Type: Fully Populated
Utilized IC / Part: TPH3202PS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 250 W
товару немає в наявності
В кошику
од. на суму грн.
TDHB-65H070L-DC |
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Виробник: Transphorm
Power Management IC Development Tools 2kW hard-switched daughter card
Power Management IC Development Tools 2kW hard-switched daughter card
на замовлення 3 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 11226.01 грн |
TDHB-65H070L-DC |
![]() |
Виробник: Transphorm
Description: TP65H070L HALF-BRIDGE BOARD
Packaging: Bulk
Current - Output: 16A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H070L
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: TP65H070L HALF-BRIDGE BOARD
Packaging: Bulk
Current - Output: 16A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H070L
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
на замовлення 13 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 12408.05 грн |
TDHBG1200DC100-KIT |
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Виробник: Transphorm
Description: EVAL BOARD FOR TP65H070L
Packaging: Bulk
Current - Output: 16A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H070L
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 1.2kW
Contents: Board(s)
Description: EVAL BOARD FOR TP65H070L
Packaging: Bulk
Current - Output: 16A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H070L
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 1.2kW
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 24676.38 грн |
TDHBG1200DC100-KIT |
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Виробник: Transphorm
Power Management IC Development Tools 2kW hard-switched Half-bridge, buck or boost
Power Management IC Development Tools 2kW hard-switched Half-bridge, buck or boost
на замовлення 8 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 29275.66 грн |
TDHBG2500P100-KIT |
![]() |
Виробник: Transphorm
Power Management IC Development Tools 2.5kW hard-switched Half-bridge, buck or boost
Power Management IC Development Tools 2.5kW hard-switched Half-bridge, buck or boost
на замовлення 7 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
TDHBG2500P100-KIT |
![]() |
Виробник: Transphorm
Description: EVAL BOARD FOR TPH3212PS
Packaging: Bulk
Current - Output: 16.5A
Contents: Board(s), Power Supply
Regulator Topology: Boost, Buck, Half-Bridge
Utilized IC / Part: TPH3212PS
Main Purpose: DC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Power - Output: 2.5kW
Description: EVAL BOARD FOR TPH3212PS
Packaging: Bulk
Current - Output: 16.5A
Contents: Board(s), Power Supply
Regulator Topology: Boost, Buck, Half-Bridge
Utilized IC / Part: TPH3212PS
Main Purpose: DC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Power - Output: 2.5kW
товару немає в наявності
В кошику
од. на суму грн.
TDINV1000P100-KIT |
![]() |
Виробник: Transphorm
Description: 1KW INVERTER EVALUATION KIT
Packaging: Bulk
Current - Output: 10A
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: TPH3206PSB
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 1 kW
Description: 1KW INVERTER EVALUATION KIT
Packaging: Bulk
Current - Output: 10A
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: TPH3206PSB
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 1 kW
товару немає в наявності
В кошику
од. на суму грн.
TDINV1000P100-KIT |
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Виробник: Transphorm
Power Management IC Development Tools 1kW inverter
Power Management IC Development Tools 1kW inverter
на замовлення 6 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
TDINV3000W050B-KIT |
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Виробник: Transphorm
Description: EVAL BOARD FOR TP65H050G4WS
Packaging: Box
Voltage - Input: 400V
Contents: Board(s)
Frequency - Switching: 50kHz
Regulator Topology: Full-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H050G4WS
Supplied Contents: Board(s)
Main Purpose: DC/AC Inverter
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 3 kW
Description: EVAL BOARD FOR TP65H050G4WS
Packaging: Box
Voltage - Input: 400V
Contents: Board(s)
Frequency - Switching: 50kHz
Regulator Topology: Full-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H050G4WS
Supplied Contents: Board(s)
Main Purpose: DC/AC Inverter
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 3 kW
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 60992.32 грн |
TDINV3000W050B-KIT |
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Виробник: Transphorm
Power Management IC Development Tools 3kW Totem-pole PFC
Power Management IC Development Tools 3kW Totem-pole PFC
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 69601.23 грн |
TDINV3000W050-KIT |
![]() |
Виробник: Transphorm
Description: 3.0KW INVERTER EVAL KIT
Packaging: Bulk
Current - Output: 22A
Frequency - Switching: 50kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H050WS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Non-Isolated
Power - Output: 3 kW
Description: 3.0KW INVERTER EVAL KIT
Packaging: Bulk
Current - Output: 22A
Frequency - Switching: 50kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H050WS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Non-Isolated
Power - Output: 3 kW
товару немає в наявності
В кошику
од. на суму грн.
TDINV3000W050-KIT |
![]() |
Виробник: Transphorm
Power Management IC Development Tools 3kW inverter
Power Management IC Development Tools 3kW inverter
на замовлення 12 шт:
термін постачання 246-255 дні (днів)Кількість | Ціна |
---|---|
1+ | 63614.03 грн |
TDINV3000W50B-KIT |
![]() |
Виробник: Transphorm
Power Management IC Development Tools 3 kW Inverter w/Microchip dsPIC
Power Management IC Development Tools 3 kW Inverter w/Microchip dsPIC
на замовлення 5 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 69601.23 грн |
TDINV3500P100-KIT |
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Виробник: Transphorm
Description: 3.5KW INVERTER EVAL KIT
Description: 3.5KW INVERTER EVAL KIT
на замовлення 14 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
TDINV3500P100-KIT |
![]() |
Виробник: Transphorm
Power Management IC Development Tools 3.5kW inverter (900V)
Power Management IC Development Tools 3.5kW inverter (900V)
на замовлення 7 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
TDPS1000E0E10-KIT |
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Виробник: Transphorm
Description: 1KW HB, BUCK OR BOOST EVAL KIT
Packaging: Bulk
Current - Output: 10A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TPH3206PS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Power - Output: 1 kW
Description: 1KW HB, BUCK OR BOOST EVAL KIT
Packaging: Bulk
Current - Output: 10A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TPH3206PS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Power - Output: 1 kW
товару немає в наявності
В кошику
од. на суму грн.
TDPV1000E0C1-KIT |
![]() |
Виробник: Transphorm
Description: 1KW INVERTER EVAL KIT
Packaging: Bulk
Current - Output: 10A
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: TPH3206PS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Isolated
Part Status: Discontinued at Digi-Key
Power - Output: 1 kW
Description: 1KW INVERTER EVAL KIT
Packaging: Bulk
Current - Output: 10A
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: TPH3206PS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Isolated
Part Status: Discontinued at Digi-Key
Power - Output: 1 kW
товару немає в наявності
В кошику
од. на суму грн.
TDTTP2500B066B-KIT |
![]() |
Виробник: Transphorm
Power Management IC Development Tools 2.5 kW Totem-pole w/Microchip dsPIC
Power Management IC Development Tools 2.5 kW Totem-pole w/Microchip dsPIC
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 107472.49 грн |
TDTTP2500B066B-KIT |
Виробник: Transphorm
Description: EVAL BOARD FOR TP65H050G4BS
Packaging: Bulk
Voltage - Output: 390V
Contents: Board(s)
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H050G4BS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 2.5kW
Description: EVAL BOARD FOR TP65H050G4BS
Packaging: Bulk
Voltage - Output: 390V
Contents: Board(s)
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H050G4BS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 2.5kW
товару немає в наявності
В кошику
од. на суму грн.
TDTTP2500P100-KIT |
![]() |
Виробник: Transphorm
Description: EVAL BOARD FOR TPH3212PS
Packaging: Bulk
Voltage - Output: 390V
Voltage - Input: 85 ~ 265 VAC
Contents: Board(s)
Frequency - Switching: 100kHz
Board Type: Fully Populated
Utilized IC / Part: TPH3212PS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Power - Output: 2.5kW
Description: EVAL BOARD FOR TPH3212PS
Packaging: Bulk
Voltage - Output: 390V
Voltage - Input: 85 ~ 265 VAC
Contents: Board(s)
Frequency - Switching: 100kHz
Board Type: Fully Populated
Utilized IC / Part: TPH3212PS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Power - Output: 2.5kW
товару немає в наявності
В кошику
од. на суму грн.
TDTTP2500P100-KIT |
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Виробник: Transphorm
Power Management IC Development Tools 2.5kW Totem-pole PFC
Power Management IC Development Tools 2.5kW Totem-pole PFC
на замовлення 4 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
TDTTP4000W065AN-KIT |
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Виробник: Transphorm
Power Management IC Development Tools 4kW Analog Totem-pole PFC
Power Management IC Development Tools 4kW Analog Totem-pole PFC
товару немає в наявності
В кошику
од. на суму грн.
TDTTP4000W065AN-KIT |
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Виробник: Transphorm
Description: EVAL BOARD FOR TDTTP4000W065AN
Packaging: Bulk
Voltage - Output: 387V
Voltage - Input: 85 ~ 265 VAC
Contents: Board(s)
Frequency - Switching: 65kHz
Board Type: Fully Populated
Utilized IC / Part: TDTTP4000W065AN
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 4 kW
Description: EVAL BOARD FOR TDTTP4000W065AN
Packaging: Bulk
Voltage - Output: 387V
Voltage - Input: 85 ~ 265 VAC
Contents: Board(s)
Frequency - Switching: 65kHz
Board Type: Fully Populated
Utilized IC / Part: TDTTP4000W065AN
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 4 kW
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 86069.81 грн |
TDTTP4000W066B-KIT |
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Виробник: Transphorm
Power Management IC Development Tools 4kW Totem-pole PFC
Power Management IC Development Tools 4kW Totem-pole PFC
на замовлення 3 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
TDTTP4000W066B-KIT |
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Виробник: Transphorm
Description: EVAL BOARD FOR TP65H035WS
Packaging: Bulk
Voltage - Output: 390V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 15A
Contents: Board(s), Power Supply
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H035WS
Supplied Contents: Board(s), Power Supply
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Power - Output: 4kW
Description: EVAL BOARD FOR TP65H035WS
Packaging: Bulk
Voltage - Output: 390V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 15A
Contents: Board(s), Power Supply
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H035WS
Supplied Contents: Board(s), Power Supply
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Power - Output: 4kW
товару немає в наявності
В кошику
од. на суму грн.
TDTTP4000W066C-KIT |
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Виробник: Transphorm
Power Management IC Development Tools 4 kW Totem-pole w/Microchip dsPIC
Power Management IC Development Tools 4 kW Totem-pole w/Microchip dsPIC
товару немає в наявності
В кошику
од. на суму грн.
TDTTP4000W066C-KIT |
![]() |
Виробник: Transphorm
Description: EVAL BOARD FOR TP65H035WS
Packaging: Bulk
Voltage - Output: 387V
Voltage - Input: 85 ~ 265 VAC
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H035WS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 4kW
Contents: Board(s)
Description: EVAL BOARD FOR TP65H035WS
Packaging: Bulk
Voltage - Output: 387V
Voltage - Input: 85 ~ 265 VAC
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H035WS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 4kW
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 101865.80 грн |
TP65H015G5WS |
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Виробник: Transphorm
Description: 650 V 95 A GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V
Description: 650 V 95 A GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V
на замовлення 593 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2335.29 грн |
30+ | 1782.91 грн |
120+ | 1683.29 грн |
TP65H015G5WS |
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Виробник: Transphorm
GaN FETs GAN FET 650V 95A TO2 47
GaN FETs GAN FET 650V 95A TO2 47
на замовлення 711 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 2590.62 грн |
30+ | 1674.03 грн |
120+ | 1452.05 грн |
TP65H035G4QS |
![]() |
Виробник: Transphorm
Description: 650 V 46.5 A GAN FET HIGH VOLTAG
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: 650 V 46.5 A GAN FET HIGH VOLTAG
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
TP65H035G4QS |
![]() |
Виробник: Transphorm
Description: 650 V 46.5 A GAN FET HIGH VOLTAG
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: 650 V 46.5 A GAN FET HIGH VOLTAG
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
на замовлення 1745 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1398.82 грн |
10+ | 960.67 грн |
100+ | 746.76 грн |
TP65H035G4QS-TR |
![]() |
Виробник: Transphorm
GaN FETs GaN FET 650 V 46.5A TOLL
GaN FETs GaN FET 650 V 46.5A TOLL
товару немає в наявності
В кошику
од. на суму грн.
TP65H035G4WS |
![]() |
Виробник: Transphorm
Description: GANFET N-CH 650V 46.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: GANFET N-CH 650V 46.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
на замовлення 560 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1375.27 грн |
30+ | 828.26 грн |
120+ | 737.34 грн |
TP65H035G4WS |
![]() |
Виробник: Transphorm
GaN FETs 650V, 35mOhm
GaN FETs 650V, 35mOhm
на замовлення 509 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1320.71 грн |
30+ | 853.71 грн |
TP65H035G4WSQA |
![]() |
Виробник: Transphorm
Description: 650 V 46.5 GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: 650 V 46.5 GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 182 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1456.91 грн |
30+ | 882.08 грн |
120+ | 793.98 грн |
TP65H035G4WSQA |
![]() |
Виробник: Transphorm
GaN FETs GAN FET 650V 46.5A TO247
GaN FETs GAN FET 650V 46.5A TO247
на замовлення 533 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1401.13 грн |
30+ | 918.80 грн |
TP65H035WS |
![]() |
Виробник: Transphorm
Description: GANFET N-CH 650V 46.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: GANFET N-CH 650V 46.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
на замовлення 294 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1198.65 грн |
30+ | 977.18 грн |
120+ | 923.36 грн |
TP65H035WS |
![]() |
Виробник: Transphorm
MOSFET 650V, 35mOhm
MOSFET 650V, 35mOhm
на замовлення 775 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1582.31 грн |
10+ | 1438.70 грн |
120+ | 1068.18 грн |
510+ | 970.21 грн |
1020+ | 912.88 грн |
TP65H035WSQA |
![]() |
Виробник: Transphorm
Description: GANFET N-CH 650V 47.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Qualification: AEC-Q101
Description: GANFET N-CH 650V 47.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Qualification: AEC-Q101
на замовлення 190 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1544.82 грн |
60+ | 1232.86 грн |
120+ | 1155.81 грн |
TP65H035WSQA |
![]() |
Виробник: Transphorm
MOSFET 650V, 35mOhm
MOSFET 650V, 35mOhm
на замовлення 580 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1687.29 грн |
10+ | 1534.67 грн |
120+ | 1139.29 грн |
510+ | 1034.07 грн |
1020+ | 973.84 грн |
TP65H050G4BS |
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Виробник: Transphorm
Description: 650 V 34 A GAN FET
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Description: 650 V 34 A GAN FET
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
на замовлення 114 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 948.25 грн |
50+ | 555.33 грн |
100+ | 535.75 грн |
TP65H050G4BS |
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Виробник: Transphorm
GaN FETs 650V, 50mOhm
GaN FETs 650V, 50mOhm
на замовлення 55 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 991.38 грн |
50+ | 596.68 грн |
TP65H050G4QS-TR |
![]() |
Виробник: Transphorm
Description: 650 V 34 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Description: 650 V 34 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
на замовлення 1615 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 890.94 грн |
10+ | 596.03 грн |
100+ | 448.35 грн |
500+ | 390.93 грн |
TP65H050G4QS-TR |
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Виробник: Transphorm
GaN FETs GaN FET 650 V 34A TOLL
GaN FETs GaN FET 650 V 34A TOLL
товару немає в наявності
В кошику
од. на суму грн.
TP65H050G4QS-TR |
![]() |
Виробник: Transphorm
Description: 650 V 34 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Description: 650 V 34 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
TP65H050G4WS |
![]() |
Виробник: Transphorm
GaN FETs GAN FET 650V 34A TO247
GaN FETs GAN FET 650V 34A TO247
на замовлення 294 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1104.82 грн |
30+ | 704.33 грн |
510+ | 594.32 грн |
TP65H050G4WS |
![]() |
Виробник: Transphorm
Description: 650 V 34 A GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Description: 650 V 34 A GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
на замовлення 439 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1056.57 грн |
30+ | 657.91 грн |
120+ | 613.71 грн |
TP65H050G4YS |
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Виробник: Transphorm
Description: 650 V 35 A GAN FET HIGH VOLTAGE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Description: 650 V 35 A GAN FET HIGH VOLTAGE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
на замовлення 333 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1156.26 грн |
10+ | 786.89 грн |
TP65H050G4YS |
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Виробник: Transphorm
GaN FETs GaN FET 650 V 35A TO-247-4
GaN FETs GaN FET 650 V 35A TO-247-4
на замовлення 364 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1104.82 грн |
10+ | 796.96 грн |
30+ | 692.28 грн |
270+ | 594.32 грн |
TP65H050WS |
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Виробник: Transphorm
MOSFET 650V, 50mOhm
MOSFET 650V, 50mOhm
на замовлення 342 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1399.44 грн |
10+ | 1267.62 грн |
120+ | 950.62 грн |
510+ | 827.98 грн |
1020+ | 789.52 грн |
2520+ | 769.93 грн |
TP65H050WS |
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Виробник: Transphorm
Description: GANFET N-CH 650V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Description: GANFET N-CH 650V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
на замовлення 229 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1123.29 грн |
30+ | 750.41 грн |
TP65H050WSQA |
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Виробник: Transphorm
GaN FETs 650V, 50mOhm
GaN FETs 650V, 50mOhm
на замовлення 320 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1411.29 грн |
10+ | 1330.21 грн |
30+ | 801.86 грн |
TP65H050WSQA |
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Виробник: Transphorm
Description: GANFET N-CH 650V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Qualification: AEC-Q101
Description: GANFET N-CH 650V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Qualification: AEC-Q101
на замовлення 21 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1321.89 грн |
TP65H070G4LSGB-TR |
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Виробник: Transphorm
Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 700µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 700µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
TP65H070G4LSGB-TR |
![]() |
Виробник: Transphorm
GaN FETs GAN FET 650V 29A QFN8x8
GaN FETs GAN FET 650V 29A QFN8x8
на замовлення 2821 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 796.66 грн |
10+ | 566.63 грн |
100+ | 394.03 грн |
TP65H070G4LSGB-TR |
![]() |
Виробник: Transphorm
Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 700µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 700µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
на замовлення 2592 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 871.32 грн |
10+ | 570.33 грн |
100+ | 428.32 грн |
500+ | 379.59 грн |
TP65H070G4LSG-TR |
![]() |
Виробник: Transphorm
Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.