| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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100N03A | UMW |
Description: TO-252 MOSFETS ROHSPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1963 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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100N03A | UMW |
Description: TO-252 MOSFETS ROHSPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1963 pF @ 15 V |
на замовлення 2137 шт: термін постачання 21-31 дні (днів) |
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10N65F | UMW |
Description: MOSFET N-CH 650V 10A TO220FPackaging: Tube |
на замовлення 936 шт: термін постачання 21-31 дні (днів) |
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12N10 | UMW |
Description: MOSFET N-CH 100V 15A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 114mOhm @ 3A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V |
на замовлення 2440 шт: термін постачання 21-31 дні (днів) |
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12N10 | UMW |
Description: MOSFET N-CH 100V 15A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 114mOhm @ 3A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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15N10 | UMW |
Description: 100V 15A 50W 80MR@10V,10A 2.5V@2Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 50 V |
на замовлення 1534 шт: термін постачання 21-31 дні (днів) |
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15N10 | UMW |
Description: 100V 15A 50W 80MR@10V,10A 2.5V@2Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N60G | UMW |
Description: SOT-223 N-CHANNEL POWER MOSFETSPackaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N60G | UMW |
Description: SOT-223 N-CHANNEL POWER MOSFETSPackaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
на замовлення 2420 шт: термін постачання 21-31 дні (днів) |
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1N60L | UMW |
Description: TO-252 N-CHANNEL POWER MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N60L | UMW |
Description: TO-252 N-CHANNEL POWER MOSFETPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
на замовлення 2469 шт: термін постачання 21-31 дні (днів) |
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1N65G | UMW |
Description: SOT-223 N-CHANNEL POWER MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N65G | UMW |
Description: SOT-223 N-CHANNEL POWER MOSFETPackaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
на замовлення 2450 шт: термін постачання 21-31 дні (днів) |
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1N65L | UMW |
Description: TO-252 N-CHANNEL POWER MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N65L | UMW |
Description: TO-252 N-CHANNEL POWER MOSFETPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
на замовлення 2358 шт: термін постачання 21-31 дні (днів) |
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25N06 | UMW |
Description: TO-252 N-CHANNEL POWER MOSFETPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 19A, 10V Power Dissipation (Max): 36.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V |
на замовлення 2030 шт: термін постачання 21-31 дні (днів) |
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25N06 | UMW |
Description: TO-252 N-CHANNEL POWER MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 19A, 10V Power Dissipation (Max): 36.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2N60L | UMW |
Description: MOSFET N-CH 600V 2A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V |
на замовлення 2445 шт: термін постачання 21-31 дні (днів) |
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2N60L | UMW |
Description: MOSFET N-CH 600V 2A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2N65G | UMW |
Description: SOT-223 N-CHANNEL POWER MOSFETSPackaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tj) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2N65G | UMW |
Description: SOT-223 N-CHANNEL POWER MOSFETSPackaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tj) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V |
на замовлення 2453 шт: термін постачання 21-31 дні (днів) |
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2N65L | UMW |
Description: TO-252 N-CHANNEL POWER MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tj) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2N65L | UMW |
Description: TO-252 N-CHANNEL POWER MOSFETPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tj) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V |
на замовлення 2499 шт: термін постачання 21-31 дні (днів) |
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| 2N7002 | UMW |
Transistor N-Channel MOSFET; 60V; 20V; 7Ohm; 115mA; 225mW; -50°C ~ 150°C; Equivalent: 2N7002-7-F; 2N7002,215; 2N7002-T1-E3; 2N7002-T1-GE3; 2N7002TA; 2N7002LT1G; 2N7002LT3G; 2N7002LT7G; 2N7002H6327XTSA2; 2N7002-TP; 2N7002 UMW T2N7002 UMWкількість в упаковці: 1000 шт |
на замовлення 3000 шт: термін постачання 28-31 дні (днів) |
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| 2SC1623 | UMW |
Transistor NPN; 400; 200mW, 50V; 100mA; 250MHz, -55°C ~ 150°C; Equivalent: 2SC1623-L6-HF; 2SC1623-L6-TP; 2SC1623-L6-TP-HF; 2SC1623 UMW T2SC1623 UMWкількість в упаковці: 1000 шт |
на замовлення 3000 шт: термін постачання 28-31 дні (днів) |
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| 2SC2712 | UMW |
Transistor NPN; 400; 150mW; 50V; 150mA; 80MHz; -55°C ~ 150°C; Equivalent: 2SC2712-GR,LF; 2SC2712-GR(TE85L,F; 2SC2712-GR(T5L,F,T); 2SC2712GT1G; 2SC2712-GR-TP; 2SC2712-GR UMW T2SC2712 UMW кількість в упаковці: 500 шт |
на замовлення 3000 шт: термін постачання 28-31 дні (днів) |
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30N03A | UMW |
Description: TO-252 MOSFETS ROHSPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1963 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30N03A | UMW |
Description: TO-252 MOSFETS ROHSPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1963 pF @ 15 V |
на замовлення 1628 шт: термін постачання 21-31 дні (днів) |
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30N06 | UMW |
Description: 60V 25A 30MR@10V,15A 34.7W 2.5V@Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 15A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30N06 | UMW |
Description: 60V 25A 30MR@10V,15A 34.7W 2.5V@Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 15A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 25 V |
на замовлення 1804 шт: термін постачання 21-31 дні (днів) |
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30P03D | UMW |
Description: MOSFET P-CH 30V 60A PDFN8Packaging: Tape & Reel (TR) Package / Case: 8-DFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Power Dissipation (Max): 1.67W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2215 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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30P03D | UMW |
Description: MOSFET P-CH 30V 60A PDFN8Packaging: Cut Tape (CT) Package / Case: 8-DFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Power Dissipation (Max): 1.67W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2215 pF @ 15 V |
на замовлення 4990 шт: термін постачання 21-31 дні (днів) |
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35N06 | UMW |
Description: TO-252 N-CHANNEL POWER MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 19A, 10V Power Dissipation (Max): 36.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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35N06 | UMW |
Description: TO-252 N-CHANNEL POWER MOSFETPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 19A, 10V Power Dissipation (Max): 36.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V |
на замовлення 2392 шт: термін постачання 21-31 дні (днів) |
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40N06 | UMW |
Description: TO-252 MOSFETS ROHSPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 30A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2928 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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40N06 | UMW |
Description: TO-252 MOSFETS ROHSPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 30A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2928 pF @ 25 V |
на замовлення 2322 шт: термін постачання 21-31 дні (днів) |
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| 4N25 | UMW |
Single-Channel CTR 20% Vce 80V Uiso 5kV Transistor with Base Replacement for: 4N25M, 4N25-LIT, 4N25-EVE, 4N25-ISO, 4N25-VIS, 4N25(SHORT,F), 4N25-000E 4N25 UMW OO4N25 UMWкількість в упаковці: 65 шт |
на замовлення 500 шт: термін постачання 28-31 дні (днів) |
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| 4N25 | UMW |
Single-Channel CTR 20% Vce 80V Uiso 5kV Transistor with Base Replacement for: 4N25M, 4N25-LIT, 4N25-EVE, 4N25-ISO, 4N25-VIS, 4N25(SHORT,F), 4N25-000E 4N25 UMW OO4N25 UMWкількість в упаковці: 65 шт |
на замовлення 20 шт: термін постачання 28-31 дні (днів) |
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| 4N35 | UMW |
DIP-6, Optocoupler, CTR=100%@If=1mA@Vce=10V, Viso=3550V, -55...+110 |
на замовлення 4000 шт: термін постачання 5 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
| 4N35 | UMW |
Single-Channel CTR 100% Vce 80V Uiso 5kV Transistor with Base Replacement for: 4N35M, 4N35-LIT, 4N35-EVE, 4N35-ISO, 4N35-VIS, 4N35(SHORT,F), 4N35-000E 4N35 UMW OO4N35 UMWкількість в упаковці: 100 шт |
на замовлення 200 шт: термін постачання 28-31 дні (днів) |
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4N60L | UMW |
Description: MOSFET N-CH 600V 4A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2A, 10V Power Dissipation (Max): 104W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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4N60L | UMW |
Description: MOSFET N-CH 600V 4A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2A, 10V Power Dissipation (Max): 104W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V |
на замовлення 2495 шт: термін постачання 21-31 дні (днів) |
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4N65F | UMW |
Description: MOSFET N-CH 650V 4A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V |
на замовлення 909 шт: термін постачання 21-31 дні (днів) |
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4N65L | UMW |
Description: MOSFET N-CH 650V 4A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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4N65L | UMW |
Description: MOSFET N-CH 650V 4A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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50N06 | UMW |
Description: TO-252 MOSFETS ROHSPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2928 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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50N06 | UMW |
Description: TO-252 MOSFETS ROHSPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2928 pF @ 25 V |
на замовлення 1193 шт: термін постачання 21-31 дні (днів) |
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5N65F | UMW |
Description: MOSFET N-CH 650V 5A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V |
на замовлення 997 шт: термін постачання 21-31 дні (днів) |
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| 6N136M | UMW |
Single-Channel CTR 19-50% Vce 30V Uiso 5kV Transistor with Base Replacement for: 6N136M, 6N136-L, 6N136-EVE, 6N136-ISO, 6N136-VIS, 6N136(F), 6N136-000E 6N136M UMW OO6N136 UMWкількість в упаковці: 40 шт |
на замовлення 240 шт: термін постачання 28-31 дні (днів) |
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| 6N136M | UMW |
Single-Channel CTR 19-50% Vce 30V Uiso 5kV Transistor with Base Replacement for: 6N136M, 6N136-L, 6N136-EVE, 6N136-ISO, 6N136-VIS, 6N136(F), 6N136-000E 6N136M UMW OO6N136 UMWкількість в упаковці: 40 шт |
на замовлення 80 шт: термін постачання 28-31 дні (днів) |
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| 6N137M | UMW |
Single-Channel CTR N/A% Vce 7V Uiso 2,5kV Open Collector Replacement for: 6N137M, 6N137-L, 6N137-EVE, 6N137-ISO, 6N137-VIS, 6N137(F), 6N137-000E 6N137 UMW OO6N137 UMWкількість в упаковці: 45 шт |
на замовлення 180 шт: термін постачання 28-31 дні (днів) |
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| 6N137M | UMW |
Single-Channel CTR N/A% Vce 7V Uiso 2,5kV Open Collector Replacement for: 6N137M, 6N137-L, 6N137-EVE, 6N137-ISO, 6N137-VIS, 6N137(F), 6N137-000E 6N137 UMW OO6N137 UMWкількість в упаковці: 40 шт |
на замовлення 28 шт: термін постачання 28-31 дні (днів) |
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| 6N137S | UMW |
Single-Channel CTR N/A% Vce 7V Uiso 2,5kV Open Collector Replacement for: 6N137SM, 6N137SDM, 6N137S, 6N137S-L, 6N137S-TA1, 6N137S-TA1-L, 6N137S(TA), 6N137SM-ISO, 6N137SMT/R, 6N137-300E, 6N137-500E 6N137S smd UMW OO6N137 smd UMWкількість в упаковці: 25 шт |
на замовлення 200 шт: термін постачання 28-31 дні (днів) |
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78D05L | UMW |
Description: IC REG LINEAR 5V 1A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-252 (DPAK) Voltage - Output (Min/Fixed): 5V PSRR: 80dB (120Hz) Voltage Dropout (Max): 2V @ 350mA Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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78D05L | UMW |
Description: IC REG LINEAR 5V 1A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-252 (DPAK) Voltage - Output (Min/Fixed): 5V PSRR: 80dB (120Hz) Voltage Dropout (Max): 2V @ 350mA Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 78L05 | UMW |
Positive Voltage Regulator; 100mA; 30V; 5V; 5%; 1,7V dropout; -20°C ~ 120°C; Equivalent: MC78L05F-TP; uA78L05ACPK; uA78L05ACPKG3; L78L05ACUTR; TA78L05F(TE12L,F); TS78L05ACY RMG; KIA78L05F; 78L05 SOT89 UMW ST+05l f UMWкількість в упаковці: 250 шт |
на замовлення 720 шт: термін постачання 28-31 дні (днів) |
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| 78L05 | UMW |
Positive Voltage Regulator; 100mA; 30V; 5V; 5%; 1,7V dropout; -20°C ~ 120°C; Equivalent: MC78L05F-TP; uA78L05ACPK; uA78L05ACPKG3; L78L05ACUTR; TA78L05F(TE12L,F); TS78L05ACY RMG; KIA78L05F; 78L05 SOT89 UMW ST+05l f UMWкількість в упаковці: 250 шт |
на замовлення 9000 шт: термін постачання 28-31 дні (днів) |
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| 78L05 | UMW |
Positive Voltage Regulator; 100mA; 30V; 5V; 5%; 1,7V dropout; -20°C ~ 120°C; Equivalent: L78L05ACZ; L78L05ACZ-TR; L78L05ACZ-AP; LM78L05ACZX; LM78L05ACZXA; LM78L05ACZ/NOPB; MC78L05ACPG; MC78L05ACPRAG; UA78L05ACLP; UA78L05ACLPE3; UA78L05ACLPR; UA78L05ACLPRкількість в упаковці: 100 шт |
на замовлення 688 шт: термін постачання 28-31 дні (днів) |
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| 78L05 | UMW |
Positive Voltage Regulator; 100mA; 30V; 5V; 5%; 1,7V dropout; -20°C ~ 120°C; Equivalent: L78L05ACZ; L78L05ACZ-TR; L78L05ACZ-AP; LM78L05ACZX; LM78L05ACZXA; LM78L05ACZ/NOPB; MC78L05ACPG; MC78L05ACPRAG; UA78L05ACLP; UA78L05ACLPE3; UA78L05ACLPR; UA78L05ACLPRкількість в упаковці: 100 шт |
на замовлення 133 шт: термін постачання 28-31 дні (днів) |
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78L05-150 | UMW |
Description: IC REG LINEAR 5V 150MA SOT89Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -20°C ~ 120°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 5.5 mA Voltage - Input (Max): 30V Number of Regulators: 1 Supplier Device Package: SOT-89 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA Protection Features: Over Current, Over Temperature, Short Circuit |
на замовлення 339 шт: термін постачання 21-31 дні (днів) |
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| 100N03A |
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Виробник: UMW
Description: TO-252 MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1963 pF @ 15 V
Description: TO-252 MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1963 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| 100N03A |
![]() |
Виробник: UMW
Description: TO-252 MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1963 pF @ 15 V
Description: TO-252 MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1963 pF @ 15 V
на замовлення 2137 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.91 грн |
| 13+ | 25.63 грн |
| 25+ | 22.95 грн |
| 100+ | 18.74 грн |
| 250+ | 17.40 грн |
| 500+ | 16.60 грн |
| 1000+ | 15.68 грн |
| 10N65F |
![]() |
на замовлення 936 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 116.20 грн |
| 10+ | 70.87 грн |
| 100+ | 47.36 грн |
| 500+ | 34.99 грн |
| 12N10 |
![]() |
Виробник: UMW
Description: MOSFET N-CH 100V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Description: MOSFET N-CH 100V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
на замовлення 2440 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 53.57 грн |
| 10+ | 32.22 грн |
| 100+ | 20.82 грн |
| 500+ | 14.89 грн |
| 1000+ | 13.39 грн |
| 12N10 |
![]() |
Виробник: UMW
Description: MOSFET N-CH 100V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Description: MOSFET N-CH 100V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
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В кошику
од. на суму грн.
| 15N10 |
![]() |
Виробник: UMW
Description: 100V 15A 50W 80MR@10V,10A 2.5V@2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 50 V
Description: 100V 15A 50W 80MR@10V,10A 2.5V@2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 50 V
на замовлення 1534 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.34 грн |
| 10+ | 35.63 грн |
| 100+ | 23.11 грн |
| 500+ | 16.60 грн |
| 1000+ | 14.96 грн |
| 15N10 |
![]() |
Виробник: UMW
Description: 100V 15A 50W 80MR@10V,10A 2.5V@2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 50 V
Description: 100V 15A 50W 80MR@10V,10A 2.5V@2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N60G |
![]() |
Виробник: UMW
Description: SOT-223 N-CHANNEL POWER MOSFETS
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: SOT-223 N-CHANNEL POWER MOSFETS
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N60G |
![]() |
Виробник: UMW
Description: SOT-223 N-CHANNEL POWER MOSFETS
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: SOT-223 N-CHANNEL POWER MOSFETS
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
на замовлення 2420 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.56 грн |
| 10+ | 33.01 грн |
| 25+ | 30.82 грн |
| 100+ | 23.13 грн |
| 250+ | 21.49 грн |
| 500+ | 18.18 грн |
| 1000+ | 13.82 грн |
| 1N60L |
![]() |
Виробник: UMW
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N60L |
![]() |
Виробник: UMW
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
на замовлення 2469 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 81.59 грн |
| 10+ | 47.54 грн |
| 25+ | 39.43 грн |
| 100+ | 28.41 грн |
| 250+ | 24.18 грн |
| 500+ | 21.58 грн |
| 1000+ | 19.08 грн |
| 1N65G |
![]() |
Виробник: UMW
Description: SOT-223 N-CHANNEL POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: SOT-223 N-CHANNEL POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N65G |
![]() |
Виробник: UMW
Description: SOT-223 N-CHANNEL POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: SOT-223 N-CHANNEL POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 77.47 грн |
| 10+ | 45.16 грн |
| 25+ | 37.39 грн |
| 100+ | 26.91 грн |
| 250+ | 22.87 грн |
| 500+ | 20.39 грн |
| 1000+ | 18.01 грн |
| 1N65L |
![]() |
Виробник: UMW
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N65L |
![]() |
Виробник: UMW
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
на замовлення 2358 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 81.59 грн |
| 10+ | 47.46 грн |
| 25+ | 39.36 грн |
| 100+ | 28.35 грн |
| 250+ | 24.13 грн |
| 500+ | 21.53 грн |
| 1000+ | 19.04 грн |
| 25N06 |
![]() |
Виробник: UMW
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 19A, 10V
Power Dissipation (Max): 36.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 19A, 10V
Power Dissipation (Max): 36.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
на замовлення 2030 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.72 грн |
| 10+ | 58.81 грн |
| 25+ | 48.98 грн |
| 100+ | 35.53 грн |
| 250+ | 30.41 грн |
| 500+ | 27.26 грн |
| 1000+ | 24.21 грн |
| 25N06 |
![]() |
Виробник: UMW
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 19A, 10V
Power Dissipation (Max): 36.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 19A, 10V
Power Dissipation (Max): 36.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
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| 2N60L |
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Виробник: UMW
Description: MOSFET N-CH 600V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Description: MOSFET N-CH 600V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
на замовлення 2445 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 58.51 грн |
| 10+ | 35.16 грн |
| 100+ | 22.75 грн |
| 500+ | 16.32 грн |
| 1000+ | 14.70 грн |
| 2N60L |
![]() |
Виробник: UMW
Description: MOSFET N-CH 600V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Description: MOSFET N-CH 600V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
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| 2N65G |
![]() |
Виробник: UMW
Description: SOT-223 N-CHANNEL POWER MOSFETS
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
Description: SOT-223 N-CHANNEL POWER MOSFETS
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
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од. на суму грн.
| 2N65G |
![]() |
Виробник: UMW
Description: SOT-223 N-CHANNEL POWER MOSFETS
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
Description: SOT-223 N-CHANNEL POWER MOSFETS
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
на замовлення 2453 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.80 грн |
| 10+ | 39.76 грн |
| 25+ | 37.14 грн |
| 100+ | 27.88 грн |
| 250+ | 25.88 грн |
| 500+ | 21.90 грн |
| 1000+ | 16.65 грн |
| 2N65L |
![]() |
Виробник: UMW
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
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од. на суму грн.
| 2N65L |
![]() |
Виробник: UMW
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
на замовлення 2499 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 54.39 грн |
| 10+ | 46.74 грн |
| 25+ | 43.90 грн |
| 100+ | 33.63 грн |
| 250+ | 31.24 грн |
| 500+ | 26.58 грн |
| 1000+ | 20.92 грн |
| 2N7002 |
![]() |
Виробник: UMW
Transistor N-Channel MOSFET; 60V; 20V; 7Ohm; 115mA; 225mW; -50°C ~ 150°C; Equivalent: 2N7002-7-F; 2N7002,215; 2N7002-T1-E3; 2N7002-T1-GE3; 2N7002TA; 2N7002LT1G; 2N7002LT3G; 2N7002LT7G; 2N7002H6327XTSA2; 2N7002-TP; 2N7002 UMW T2N7002 UMW
кількість в упаковці: 1000 шт
Transistor N-Channel MOSFET; 60V; 20V; 7Ohm; 115mA; 225mW; -50°C ~ 150°C; Equivalent: 2N7002-7-F; 2N7002,215; 2N7002-T1-E3; 2N7002-T1-GE3; 2N7002TA; 2N7002LT1G; 2N7002LT3G; 2N7002LT7G; 2N7002H6327XTSA2; 2N7002-TP; 2N7002 UMW T2N7002 UMW
кількість в упаковці: 1000 шт
на замовлення 3000 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 0.64 грн |
| 2SC1623 |
![]() |
Виробник: UMW
Transistor NPN; 400; 200mW, 50V; 100mA; 250MHz, -55°C ~ 150°C; Equivalent: 2SC1623-L6-HF; 2SC1623-L6-TP; 2SC1623-L6-TP-HF; 2SC1623 UMW T2SC1623 UMW
кількість в упаковці: 1000 шт
Transistor NPN; 400; 200mW, 50V; 100mA; 250MHz, -55°C ~ 150°C; Equivalent: 2SC1623-L6-HF; 2SC1623-L6-TP; 2SC1623-L6-TP-HF; 2SC1623 UMW T2SC1623 UMW
кількість в упаковці: 1000 шт
на замовлення 3000 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 0.59 грн |
| 2SC2712 |
Виробник: UMW
Transistor NPN; 400; 150mW; 50V; 150mA; 80MHz; -55°C ~ 150°C; Equivalent: 2SC2712-GR,LF; 2SC2712-GR(TE85L,F; 2SC2712-GR(T5L,F,T); 2SC2712GT1G; 2SC2712-GR-TP; 2SC2712-GR UMW T2SC2712 UMW
кількість в упаковці: 500 шт
Transistor NPN; 400; 150mW; 50V; 150mA; 80MHz; -55°C ~ 150°C; Equivalent: 2SC2712-GR,LF; 2SC2712-GR(TE85L,F; 2SC2712-GR(T5L,F,T); 2SC2712GT1G; 2SC2712-GR-TP; 2SC2712-GR UMW T2SC2712 UMW
кількість в упаковці: 500 шт
на замовлення 3000 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 0.78 грн |
| 30N03A |
![]() |
Виробник: UMW
Description: TO-252 MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1963 pF @ 15 V
Description: TO-252 MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1963 pF @ 15 V
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од. на суму грн.
| 30N03A |
![]() |
Виробник: UMW
Description: TO-252 MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1963 pF @ 15 V
Description: TO-252 MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1963 pF @ 15 V
на замовлення 1628 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 65.11 грн |
| 10+ | 38.57 грн |
| 100+ | 24.99 грн |
| 500+ | 17.92 грн |
| 1000+ | 16.14 грн |
| 30N06 |
![]() |
Виробник: UMW
Description: 60V 25A 30MR@10V,15A 34.7W 2.5V@
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 25 V
Description: 60V 25A 30MR@10V,15A 34.7W 2.5V@
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 25 V
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од. на суму грн.
| 30N06 |
![]() |
Виробник: UMW
Description: 60V 25A 30MR@10V,15A 34.7W 2.5V@
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 25 V
Description: 60V 25A 30MR@10V,15A 34.7W 2.5V@
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 25 V
на замовлення 1804 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.82 грн |
| 10+ | 45.71 грн |
| 100+ | 29.93 грн |
| 500+ | 21.72 грн |
| 1000+ | 19.66 грн |
| 30P03D |
![]() |
Виробник: UMW
Description: MOSFET P-CH 30V 60A PDFN8
Packaging: Tape & Reel (TR)
Package / Case: 8-DFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 1.67W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2215 pF @ 15 V
Description: MOSFET P-CH 30V 60A PDFN8
Packaging: Tape & Reel (TR)
Package / Case: 8-DFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 1.67W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2215 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| 30P03D |
![]() |
Виробник: UMW
Description: MOSFET P-CH 30V 60A PDFN8
Packaging: Cut Tape (CT)
Package / Case: 8-DFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 1.67W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2215 pF @ 15 V
Description: MOSFET P-CH 30V 60A PDFN8
Packaging: Cut Tape (CT)
Package / Case: 8-DFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 1.67W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2215 pF @ 15 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.69 грн |
| 10+ | 34.60 грн |
| 100+ | 22.34 грн |
| 500+ | 15.98 грн |
| 1000+ | 14.38 грн |
| 2000+ | 13.02 грн |
| 35N06 |
![]() |
Виробник: UMW
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 19A, 10V
Power Dissipation (Max): 36.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 19A, 10V
Power Dissipation (Max): 36.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| 35N06 |
![]() |
Виробник: UMW
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 19A, 10V
Power Dissipation (Max): 36.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
Description: TO-252 N-CHANNEL POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 19A, 10V
Power Dissipation (Max): 36.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
на замовлення 2392 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 119.50 грн |
| 10+ | 70.63 грн |
| 25+ | 59.01 грн |
| 100+ | 43.11 грн |
| 250+ | 37.07 грн |
| 500+ | 33.35 грн |
| 1000+ | 29.74 грн |
| 40N06 |
![]() |
Виробник: UMW
Description: TO-252 MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 30A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2928 pF @ 25 V
Description: TO-252 MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 30A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2928 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 19.17 грн |
| 40N06 |
![]() |
Виробник: UMW
Description: TO-252 MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 30A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2928 pF @ 25 V
Description: TO-252 MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 30A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2928 pF @ 25 V
на замовлення 2322 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.82 грн |
| 10+ | 45.47 грн |
| 100+ | 29.76 грн |
| 500+ | 21.59 грн |
| 1000+ | 19.54 грн |
| 4N25 |
![]() |
Виробник: UMW
Single-Channel CTR 20% Vce 80V Uiso 5kV Transistor with Base Replacement for: 4N25M, 4N25-LIT, 4N25-EVE, 4N25-ISO, 4N25-VIS, 4N25(SHORT,F), 4N25-000E 4N25 UMW OO4N25 UMW
кількість в упаковці: 65 шт
Single-Channel CTR 20% Vce 80V Uiso 5kV Transistor with Base Replacement for: 4N25M, 4N25-LIT, 4N25-EVE, 4N25-ISO, 4N25-VIS, 4N25(SHORT,F), 4N25-000E 4N25 UMW OO4N25 UMW
кількість в упаковці: 65 шт
на замовлення 500 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 130+ | 6.25 грн |
| 4N25 |
![]() |
Виробник: UMW
Single-Channel CTR 20% Vce 80V Uiso 5kV Transistor with Base Replacement for: 4N25M, 4N25-LIT, 4N25-EVE, 4N25-ISO, 4N25-VIS, 4N25(SHORT,F), 4N25-000E 4N25 UMW OO4N25 UMW
кількість в упаковці: 65 шт
Single-Channel CTR 20% Vce 80V Uiso 5kV Transistor with Base Replacement for: 4N25M, 4N25-LIT, 4N25-EVE, 4N25-ISO, 4N25-VIS, 4N25(SHORT,F), 4N25-000E 4N25 UMW OO4N25 UMW
кількість в упаковці: 65 шт
на замовлення 20 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 65+ | 8.47 грн |
| 4N35 |
![]() |
Виробник: UMW
DIP-6, Optocoupler, CTR=100%@If=1mA@Vce=10V, Viso=3550V, -55...+110
DIP-6, Optocoupler, CTR=100%@If=1mA@Vce=10V, Viso=3550V, -55...+110
на замовлення 4000 шт:
термін постачання 5 дні (днів)В кошику од. на суму грн.
| 4N35 |
![]() |
Виробник: UMW
Single-Channel CTR 100% Vce 80V Uiso 5kV Transistor with Base Replacement for: 4N35M, 4N35-LIT, 4N35-EVE, 4N35-ISO, 4N35-VIS, 4N35(SHORT,F), 4N35-000E 4N35 UMW OO4N35 UMW
кількість в упаковці: 100 шт
Single-Channel CTR 100% Vce 80V Uiso 5kV Transistor with Base Replacement for: 4N35M, 4N35-LIT, 4N35-EVE, 4N35-ISO, 4N35-VIS, 4N35(SHORT,F), 4N35-000E 4N35 UMW OO4N35 UMW
кількість в упаковці: 100 шт
на замовлення 200 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 7.01 грн |
| 4N60L |
![]() |
Виробник: UMW
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2A, 10V
Power Dissipation (Max): 104W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2A, 10V
Power Dissipation (Max): 104W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
товару немає в наявності
В кошику
од. на суму грн.
| 4N60L |
![]() |
Виробник: UMW
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2A, 10V
Power Dissipation (Max): 104W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Description: MOSFET N-CH 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2A, 10V
Power Dissipation (Max): 104W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 67.58 грн |
| 10+ | 40.47 грн |
| 100+ | 26.22 грн |
| 500+ | 18.85 грн |
| 1000+ | 16.99 грн |
| 4N65F |
![]() |
Виробник: UMW
Description: MOSFET N-CH 650V 4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Description: MOSFET N-CH 650V 4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
на замовлення 909 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 70.88 грн |
| 10+ | 42.38 грн |
| 100+ | 27.66 грн |
| 500+ | 20.00 грн |
| 4N65L |
![]() |
Виробник: UMW
Description: MOSFET N-CH 650V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Description: MOSFET N-CH 650V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 14.92 грн |
| 5000+ | 13.17 грн |
| 4N65L |
![]() |
Виробник: UMW
Description: MOSFET N-CH 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Description: MOSFET N-CH 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
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| 50N06 |
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Виробник: UMW
Description: TO-252 MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2928 pF @ 25 V
Description: TO-252 MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2928 pF @ 25 V
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од. на суму грн.
| 50N06 |
![]() |
Виробник: UMW
Description: TO-252 MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2928 pF @ 25 V
Description: TO-252 MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2928 pF @ 25 V
на замовлення 1193 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 80.76 грн |
| 10+ | 48.57 грн |
| 100+ | 31.89 грн |
| 500+ | 23.19 грн |
| 1000+ | 21.02 грн |
| 5N65F |
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Виробник: UMW
Description: MOSFET N-CH 650V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Description: MOSFET N-CH 650V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
на замовлення 997 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.01 грн |
| 10+ | 53.73 грн |
| 100+ | 35.32 грн |
| 500+ | 25.72 грн |
| 6N136M |
![]() |
Виробник: UMW
Single-Channel CTR 19-50% Vce 30V Uiso 5kV Transistor with Base Replacement for: 6N136M, 6N136-L, 6N136-EVE, 6N136-ISO, 6N136-VIS, 6N136(F), 6N136-000E 6N136M UMW OO6N136 UMW
кількість в упаковці: 40 шт
Single-Channel CTR 19-50% Vce 30V Uiso 5kV Transistor with Base Replacement for: 6N136M, 6N136-L, 6N136-EVE, 6N136-ISO, 6N136-VIS, 6N136(F), 6N136-000E 6N136M UMW OO6N136 UMW
кількість в упаковці: 40 шт
на замовлення 240 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 16.09 грн |
| 6N136M |
![]() |
Виробник: UMW
Single-Channel CTR 19-50% Vce 30V Uiso 5kV Transistor with Base Replacement for: 6N136M, 6N136-L, 6N136-EVE, 6N136-ISO, 6N136-VIS, 6N136(F), 6N136-000E 6N136M UMW OO6N136 UMW
кількість в упаковці: 40 шт
Single-Channel CTR 19-50% Vce 30V Uiso 5kV Transistor with Base Replacement for: 6N136M, 6N136-L, 6N136-EVE, 6N136-ISO, 6N136-VIS, 6N136(F), 6N136-000E 6N136M UMW OO6N136 UMW
кількість в упаковці: 40 шт
на замовлення 80 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 16.09 грн |
| 6N137M |
![]() |
Виробник: UMW
Single-Channel CTR N/A% Vce 7V Uiso 2,5kV Open Collector Replacement for: 6N137M, 6N137-L, 6N137-EVE, 6N137-ISO, 6N137-VIS, 6N137(F), 6N137-000E 6N137 UMW OO6N137 UMW
кількість в упаковці: 45 шт
Single-Channel CTR N/A% Vce 7V Uiso 2,5kV Open Collector Replacement for: 6N137M, 6N137-L, 6N137-EVE, 6N137-ISO, 6N137-VIS, 6N137(F), 6N137-000E 6N137 UMW OO6N137 UMW
кількість в упаковці: 45 шт
на замовлення 180 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 14.15 грн |
| 6N137M |
![]() |
Виробник: UMW
Single-Channel CTR N/A% Vce 7V Uiso 2,5kV Open Collector Replacement for: 6N137M, 6N137-L, 6N137-EVE, 6N137-ISO, 6N137-VIS, 6N137(F), 6N137-000E 6N137 UMW OO6N137 UMW
кількість в упаковці: 40 шт
Single-Channel CTR N/A% Vce 7V Uiso 2,5kV Open Collector Replacement for: 6N137M, 6N137-L, 6N137-EVE, 6N137-ISO, 6N137-VIS, 6N137(F), 6N137-000E 6N137 UMW OO6N137 UMW
кількість в упаковці: 40 шт
на замовлення 28 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 14.25 грн |
| 6N137S | ![]() |
![]() |
Виробник: UMW
Single-Channel CTR N/A% Vce 7V Uiso 2,5kV Open Collector Replacement for: 6N137SM, 6N137SDM, 6N137S, 6N137S-L, 6N137S-TA1, 6N137S-TA1-L, 6N137S(TA), 6N137SM-ISO, 6N137SMT/R, 6N137-300E, 6N137-500E 6N137S smd UMW OO6N137 smd UMW
кількість в упаковці: 25 шт
Single-Channel CTR N/A% Vce 7V Uiso 2,5kV Open Collector Replacement for: 6N137SM, 6N137SDM, 6N137S, 6N137S-L, 6N137S-TA1, 6N137S-TA1-L, 6N137S(TA), 6N137SM-ISO, 6N137SMT/R, 6N137-300E, 6N137-500E 6N137S smd UMW OO6N137 smd UMW
кількість в упаковці: 25 шт
на замовлення 200 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 14.39 грн |
| 78D05L |
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Виробник: UMW
Description: IC REG LINEAR 5V 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 5V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 350mA
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 5V 1A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 5V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 350mA
Protection Features: Over Temperature, Short Circuit
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| 78D05L |
![]() |
Виробник: UMW
Description: IC REG LINEAR 5V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 5V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 350mA
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 5V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): 5V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 350mA
Protection Features: Over Temperature, Short Circuit
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од. на суму грн.
| 78L05 |
![]() |
Виробник: UMW
Positive Voltage Regulator; 100mA; 30V; 5V; 5%; 1,7V dropout; -20°C ~ 120°C; Equivalent: MC78L05F-TP; uA78L05ACPK; uA78L05ACPKG3; L78L05ACUTR; TA78L05F(TE12L,F); TS78L05ACY RMG; KIA78L05F; 78L05 SOT89 UMW ST+05l f UMW
кількість в упаковці: 250 шт
Positive Voltage Regulator; 100mA; 30V; 5V; 5%; 1,7V dropout; -20°C ~ 120°C; Equivalent: MC78L05F-TP; uA78L05ACPK; uA78L05ACPKG3; L78L05ACUTR; TA78L05F(TE12L,F); TS78L05ACY RMG; KIA78L05F; 78L05 SOT89 UMW ST+05l f UMW
кількість в упаковці: 250 шт
на замовлення 720 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 250+ | 2.72 грн |
| 78L05 |
![]() |
Виробник: UMW
Positive Voltage Regulator; 100mA; 30V; 5V; 5%; 1,7V dropout; -20°C ~ 120°C; Equivalent: MC78L05F-TP; uA78L05ACPK; uA78L05ACPKG3; L78L05ACUTR; TA78L05F(TE12L,F); TS78L05ACY RMG; KIA78L05F; 78L05 SOT89 UMW ST+05l f UMW
кількість в упаковці: 250 шт
Positive Voltage Regulator; 100mA; 30V; 5V; 5%; 1,7V dropout; -20°C ~ 120°C; Equivalent: MC78L05F-TP; uA78L05ACPK; uA78L05ACPKG3; L78L05ACUTR; TA78L05F(TE12L,F); TS78L05ACY RMG; KIA78L05F; 78L05 SOT89 UMW ST+05l f UMW
кількість в упаковці: 250 шт
на замовлення 9000 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 250+ | 2.72 грн |
| 78L05 |
![]() |
Виробник: UMW
Positive Voltage Regulator; 100mA; 30V; 5V; 5%; 1,7V dropout; -20°C ~ 120°C; Equivalent: L78L05ACZ; L78L05ACZ-TR; L78L05ACZ-AP; LM78L05ACZX; LM78L05ACZXA; LM78L05ACZ/NOPB; MC78L05ACPG; MC78L05ACPRAG; UA78L05ACLP; UA78L05ACLPE3; UA78L05ACLPR; UA78L05ACLPR
кількість в упаковці: 100 шт
Positive Voltage Regulator; 100mA; 30V; 5V; 5%; 1,7V dropout; -20°C ~ 120°C; Equivalent: L78L05ACZ; L78L05ACZ-TR; L78L05ACZ-AP; LM78L05ACZX; LM78L05ACZXA; LM78L05ACZ/NOPB; MC78L05ACPG; MC78L05ACPRAG; UA78L05ACLP; UA78L05ACLPE3; UA78L05ACLPR; UA78L05ACLPR
кількість в упаковці: 100 шт
на замовлення 688 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 3.15 грн |
| 78L05 |
![]() |
Виробник: UMW
Positive Voltage Regulator; 100mA; 30V; 5V; 5%; 1,7V dropout; -20°C ~ 120°C; Equivalent: L78L05ACZ; L78L05ACZ-TR; L78L05ACZ-AP; LM78L05ACZX; LM78L05ACZXA; LM78L05ACZ/NOPB; MC78L05ACPG; MC78L05ACPRAG; UA78L05ACLP; UA78L05ACLPE3; UA78L05ACLPR; UA78L05ACLPR
кількість в упаковці: 100 шт
Positive Voltage Regulator; 100mA; 30V; 5V; 5%; 1,7V dropout; -20°C ~ 120°C; Equivalent: L78L05ACZ; L78L05ACZ-TR; L78L05ACZ-AP; LM78L05ACZX; LM78L05ACZXA; LM78L05ACZ/NOPB; MC78L05ACPG; MC78L05ACPRAG; UA78L05ACLP; UA78L05ACLPE3; UA78L05ACLPR; UA78L05ACLPR
кількість в упаковці: 100 шт
на замовлення 133 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 3.15 грн |
| 78L05-150 |
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Виробник: UMW
Description: IC REG LINEAR 5V 150MA SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -20°C ~ 120°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: SOT-89
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LINEAR 5V 150MA SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -20°C ~ 120°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: SOT-89
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 339 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.44 грн |
| 16+ | 20.16 грн |
| 25+ | 16.51 грн |
| 100+ | 11.63 грн |
| 250+ | 9.72 грн |



















