Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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UMWIR2110STR | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 700 V Supplier Device Package: 16-SOP Rise / Fall Time (Typ): 25ns, 17ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 4A, 4A |
на замовлення 1937 шт: термін постачання 21-31 дні (днів) |
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UMWIRF2804PBF | UMW |
![]() Packaging: Tube |
на замовлення 960 шт: термін постачання 21-31 дні (днів) |
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UMWIRF4905 | UMW |
![]() Packaging: Tube |
на замовлення 1896 шт: термін постачання 21-31 дні (днів) |
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UMWIRF4905STRL | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
на замовлення 2410 шт: термін постачання 21-31 дні (днів) |
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UMWIRF4905STRL | UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF4905STRLP | UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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UMWIRF4905STRLP | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V |
на замовлення 128 шт: термін постачання 21-31 дні (днів) |
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UMWIRF5305PBF | UMW |
![]() Packaging: Tube |
на замовлення 411 шт: термін постачання 21-31 дні (днів) |
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UMWIRF5305STRL | UMW |
![]() Packaging: Tape & Reel (TR) |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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UMWIRF5305STRL | UMW |
![]() Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7103TR | UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7103TR | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 2994 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7104TR | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 2947 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7104TR | UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7105TR | UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V, 290pF @ 15V Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V, 250mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 25nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7105TR | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V, 290pF @ 15V Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V, 250mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 25nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 2988 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7204TR | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V |
на замовлення 2993 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7204TR | UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7205TR | UMW |
![]() Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7205TR | UMW |
![]() Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7301TR | UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 2.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7301TR | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 2.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SOP |
на замовлення 2991 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7303TR | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7303TR | UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7304TR | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SOP |
на замовлення 2999 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7304TR | UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7307TR | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 4.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, 610pF @ 15V Rds On (Max) @ Id, Vgs: 53mOhm @ 2.6A, 4.5V, 100mOhm @ 2.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 22nC @ 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SOP |
на замовлення 2793 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7307TR | UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 4.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, 610pF @ 15V Rds On (Max) @ Id, Vgs: 53mOhm @ 2.6A, 4.5V, 100mOhm @ 2.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 22nC @ 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7309TR | UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7309TR | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7309TR | UMW |
![]() Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7313TR | UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7313TR | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 2978 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7341TR | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V |
на замовлення 267 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7341TR | UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7342TR | UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7342TR | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7343TR | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 3.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V, 690pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V, 90mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, 38nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7343TR | UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 3.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V, 690pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V, 90mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, 38nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7389TR | UMW |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 5.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 710pF @ 25V Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V, 58mOhm @ 4.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 34nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7389TR | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 5.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 710pF @ 25V Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V, 58mOhm @ 4.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 34nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7401TR | UMW |
![]() Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7401TR | UMW |
![]() Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7403TR | UMW |
![]() Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7403TR | UMW |
![]() Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7404TR | UMW |
![]() Packaging: Cut Tape (CT) |
на замовлення 2270 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7404TR | UMW |
![]() Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7406TR | UMW |
![]() Packaging: Cut Tape (CT) |
на замовлення 2850 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7406TR | UMW |
![]() Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7413TR | UMW |
![]() Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7413TR | UMW |
![]() Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7416TR | UMW |
![]() Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7416TR | UMW |
![]() Packaging: Cut Tape (CT) |
на замовлення 2577 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7807TR | UMW |
![]() Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF7807TR | UMW |
![]() Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7821TR | UMW |
![]() Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMWIRF7821TR | UMW |
![]() Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF8113TR | UMW |
![]() Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMWIRF8113TR | UMW |
![]() Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMWIRF8707TR | UMW |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V |
товару немає в наявності |
В кошику од. на суму грн. |
UMWIR2110STR |
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Виробник: UMW
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 700 V
Supplier Device Package: 16-SOP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 4A, 4A
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 700 V
Supplier Device Package: 16-SOP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 4A, 4A
на замовлення 1937 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 121.76 грн |
10+ | 86.29 грн |
25+ | 78.44 грн |
100+ | 65.56 грн |
250+ | 61.71 грн |
500+ | 59.39 грн |
1000+ | 56.53 грн |
UMWIRF2804PBF |
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на замовлення 960 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 101.07 грн |
10+ | 61.77 грн |
100+ | 41.04 грн |
500+ | 30.16 грн |
UMWIRF4905 |
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на замовлення 1896 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 137.68 грн |
10+ | 84.45 грн |
100+ | 56.98 грн |
500+ | 42.43 грн |
1000+ | 38.88 грн |
UMWIRF4905STRL |
![]() |
Виробник: UMW
Description: MOSFET P-CH 55V 42A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: MOSFET P-CH 55V 42A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
на замовлення 2410 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 163.94 грн |
10+ | 101.00 грн |
100+ | 68.80 грн |
500+ | 51.64 грн |
1000+ | 50.31 грн |
UMWIRF4905STRL |
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Виробник: UMW
Description: MOSFET P-CH 55V 42A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: MOSFET P-CH 55V 42A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
UMWIRF4905STRLP |
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Виробник: UMW
Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 44.22 грн |
UMWIRF4905STRLP |
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Виробник: UMW
Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
на замовлення 128 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 137.68 грн |
10+ | 84.45 грн |
100+ | 56.98 грн |
UMWIRF5305PBF |
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на замовлення 411 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 95.50 грн |
10+ | 58.32 грн |
100+ | 38.65 грн |
UMWIRF5305STRL |
![]() |
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 34.13 грн |
1600+ | 30.13 грн |
UMWIRF7103TR |
![]() |
Виробник: UMW
Description: MOSFET 2N-CH 50V 3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 50V 3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
товару немає в наявності
В кошику
од. на суму грн.
UMWIRF7103TR |
![]() |
Виробник: UMW
Description: MOSFET 2N-CH 50V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 50V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 2994 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 72.42 грн |
10+ | 43.83 грн |
100+ | 28.68 грн |
500+ | 20.78 грн |
1000+ | 18.80 грн |
UMWIRF7104TR |
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Виробник: UMW
Description: MOSFET 2P-CH 30V 2.3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2P-CH 30V 2.3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 2947 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 66.85 грн |
10+ | 40.00 грн |
100+ | 26.06 грн |
500+ | 18.81 грн |
1000+ | 16.99 грн |
UMWIRF7104TR |
![]() |
Виробник: UMW
Description: MOSFET 2P-CH 30V 2.3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2P-CH 30V 2.3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
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В кошику
од. на суму грн.
UMWIRF7105TR |
![]() |
Виробник: UMW
Description: MOSFET N/P-CH 25V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V, 290pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V, 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 25V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V, 290pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V, 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
товару немає в наявності
В кошику
од. на суму грн.
UMWIRF7105TR |
![]() |
Виробник: UMW
Description: MOSFET N/P-CH 25V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V, 290pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V, 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 25V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V, 290pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V, 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 2988 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 72.42 грн |
10+ | 43.83 грн |
100+ | 28.68 грн |
500+ | 20.78 грн |
1000+ | 18.80 грн |
UMWIRF7204TR |
![]() |
Виробник: UMW
Description: MOSFET P-CH 20V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
Description: MOSFET P-CH 20V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
на замовлення 2993 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 49.34 грн |
11+ | 29.81 грн |
100+ | 19.13 грн |
500+ | 13.65 грн |
1000+ | 12.26 грн |
UMWIRF7204TR |
![]() |
Виробник: UMW
Description: MOSFET P-CH 20V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
Description: MOSFET P-CH 20V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
UMWIRF7205TR |
![]() |
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 16.24 грн |
UMWIRF7301TR |
![]() |
Виробник: UMW
Description: MOSFET 2N-CH 20V 5.2A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 20V 5.2A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 13.50 грн |
UMWIRF7301TR |
![]() |
Виробник: UMW
Description: MOSFET 2N-CH 20V 5.2A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 20V 5.2A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SOP
на замовлення 2991 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 56.50 грн |
10+ | 33.95 грн |
100+ | 21.97 грн |
500+ | 15.76 грн |
1000+ | 14.19 грн |
UMWIRF7303TR |
![]() |
Виробник: UMW
Description: MOSFET 2N-CH 30V 4.9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 30V 4.9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
товару немає в наявності
В кошику
од. на суму грн.
UMWIRF7303TR |
![]() |
Виробник: UMW
Description: MOSFET 2N-CH 30V 4.9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 30V 4.9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 18.03 грн |
UMWIRF7304TR |
![]() |
Виробник: UMW
Description: MOSFET 2P-CH 20V 4.3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2P-CH 20V 4.3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SOP
на замовлення 2999 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 70.03 грн |
10+ | 42.00 грн |
100+ | 27.37 грн |
500+ | 19.80 грн |
1000+ | 17.90 грн |
UMWIRF7304TR |
![]() |
Виробник: UMW
Description: MOSFET 2P-CH 20V 4.3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2P-CH 20V 4.3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SOP
товару немає в наявності
В кошику
од. на суму грн.
UMWIRF7307TR |
![]() |
Виробник: UMW
Description: MOSFET 2N-CH 20V 5.2A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 4.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, 610pF @ 15V
Rds On (Max) @ Id, Vgs: 53mOhm @ 2.6A, 4.5V, 100mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 22nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 20V 5.2A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 4.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, 610pF @ 15V
Rds On (Max) @ Id, Vgs: 53mOhm @ 2.6A, 4.5V, 100mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 22nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SOP
на замовлення 2793 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 56.50 грн |
10+ | 33.95 грн |
100+ | 21.97 грн |
500+ | 15.76 грн |
1000+ | 14.19 грн |
UMWIRF7307TR |
![]() |
Виробник: UMW
Description: MOSFET 2N-CH 20V 5.2A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 4.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, 610pF @ 15V
Rds On (Max) @ Id, Vgs: 53mOhm @ 2.6A, 4.5V, 100mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 22nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 20V 5.2A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 4.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, 610pF @ 15V
Rds On (Max) @ Id, Vgs: 53mOhm @ 2.6A, 4.5V, 100mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, 22nC @ 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SOP
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UMWIRF7309TR |
![]() |
Виробник: UMW
Description: MOSFET N/P-CH 30V 4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
товару немає в наявності
В кошику
од. на суму грн.
UMWIRF7309TR |
![]() |
Виробник: UMW
Description: MOSFET N/P-CH 30V 4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 72.42 грн |
10+ | 43.83 грн |
100+ | 28.68 грн |
500+ | 20.78 грн |
1000+ | 18.80 грн |
UMWIRF7309TR |
![]() |
Виробник: UMW
Description: MOSFET N/P-CH 30V 4A 8SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 4A 8SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, 440pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
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В кошику
од. на суму грн.
UMWIRF7313TR |
![]() |
Виробник: UMW
Description: MOSFET 2N-CH 30V 6.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 30V 6.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
товару немає в наявності
В кошику
од. на суму грн.
UMWIRF7313TR |
![]() |
Виробник: UMW
Description: MOSFET 2N-CH 30V 6.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 30V 6.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 2978 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 72.42 грн |
10+ | 43.83 грн |
100+ | 28.68 грн |
500+ | 20.78 грн |
1000+ | 18.80 грн |
UMWIRF7341TR |
![]() |
Виробник: UMW
Description: MOSFET 2N-CH 55V 4.7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Description: MOSFET 2N-CH 55V 4.7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
на замовлення 267 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 78.79 грн |
10+ | 47.67 грн |
100+ | 31.25 грн |
UMWIRF7341TR |
![]() |
Виробник: UMW
Description: MOSFET 2N-CH 55V 4.7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 55V 4.7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 19.79 грн |
UMWIRF7342TR |
![]() |
Виробник: UMW
Description: MOSFET 2P-CH 55V 3.4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2P-CH 55V 3.4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 23.24 грн |
UMWIRF7342TR |
![]() |
Виробник: UMW
Description: MOSFET 2P-CH 55V 3.4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2P-CH 55V 3.4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
товару немає в наявності
В кошику
од. на суму грн.
UMWIRF7343TR |
![]() |
Виробник: UMW
Description: MOSFET N/P-CH 55V 4.7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V, 690pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V, 90mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, 38nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 55V 4.7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V, 690pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V, 90mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, 38nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
товару немає в наявності
В кошику
од. на суму грн.
UMWIRF7343TR |
![]() |
Виробник: UMW
Description: MOSFET N/P-CH 55V 4.7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V, 690pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V, 90mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, 38nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 55V 4.7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V, 690pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V, 90mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, 38nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 19.79 грн |
UMWIRF7389TR |
![]() |
Виробник: UMW
Description: MOSFET N/P-CH 30V 7.3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 5.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 710pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V, 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 34nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 7.3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 5.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 710pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V, 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 34nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
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UMWIRF7389TR |
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Виробник: UMW
Description: MOSFET N/P-CH 30V 7.3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 5.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 710pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V, 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 34nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 7.3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 5.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 710pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V, 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 34nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 63.66 грн |
10+ | 38.09 грн |
100+ | 24.71 грн |
500+ | 17.80 грн |
1000+ | 16.07 грн |
UMWIRF7401TR |
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на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.56 грн |
UMWIRF7403TR |
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на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 14.42 грн |
UMWIRF7404TR |
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на замовлення 2270 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 72.42 грн |
10+ | 43.83 грн |
100+ | 28.68 грн |
500+ | 20.78 грн |
1000+ | 18.80 грн |
UMWIRF7406TR |
![]() |
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 53.32 грн |
10+ | 31.88 грн |
100+ | 20.56 грн |
500+ | 14.71 грн |
1000+ | 13.23 грн |
UMWIRF7413TR |
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на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 16.24 грн |
UMWIRF7416TR |
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на замовлення 2577 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 70.03 грн |
10+ | 42.00 грн |
100+ | 27.37 грн |
500+ | 19.80 грн |
1000+ | 17.90 грн |
UMWIRF7807TR |
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на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.56 грн |
UMWIRF7821TR |
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на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 21.52 грн |
UMWIRF8113TR |
![]() |
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 15.33 грн |
UMWIRF8707TR |
![]() |
Виробник: UMW
Description: MOSFET N-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
товару немає в наявності
В кошику
од. на суму грн.