| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PESD3V3L1BA | UMW |
Description: TVS DIODE 3.3VWM 24VC SOD323Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 20A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 480W Power Line Protection: No Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PESD3V3L1BA | UMW |
Description: TVS DIODE 3.3VWM 24VC SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 20A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 480W Power Line Protection: No Part Status: Active |
на замовлення 1926 шт: термін постачання 21-31 дні (днів) |
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PESD5V0V1BL | UMW |
Description: TVS DIODE 5VWM 12.5VC SOD882Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: Ethernet, Telecom Capacitance @ Frequency: 11pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-882 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 12.5V Power - Peak Pulse: 45W Power Line Protection: No Part Status: Active Grade: Automotive |
на замовлення 1419 шт: термін постачання 21-31 дні (днів) |
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PESD5V0V1BL | UMW |
Description: TVS DIODE 5VWM 12.5VC SOD882Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: Ethernet, Telecom Capacitance @ Frequency: 11pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-882 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 12.5V Power - Peak Pulse: 45W Power Line Protection: No Part Status: Active Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PS2501 | UMW | DIP-4, CTR=80...600%, -55...+100C |
на замовлення 110 шт: термін постачання 5 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
| PS2701-1 | UMW |
(SOP-4) |
на замовлення 140 шт: термін постачання 5 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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PSM712-LF-T7 | UMW |
Description: TVS DIODE 12VWM 7VWM SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Current - Peak Pulse (10/1000µs): 7A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max), 7V (Max) Supplier Device Package: SOT-23 Bidirectional Channels: 2 Voltage - Breakdown (Min): 13.3V, 7.5V Voltage - Clamping (Max) @ Ipp: 25V, 15V Power - Peak Pulse: 150W Power Line Protection: No Part Status: Active |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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PSM712-LF-T7 | UMW |
Description: TVS DIODE 12VWM 7VWM SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Current - Peak Pulse (10/1000µs): 7A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max), 7V (Max) Supplier Device Package: SOT-23 Bidirectional Channels: 2 Voltage - Breakdown (Min): 13.3V, 7.5V Voltage - Clamping (Max) @ Ipp: 25V, 15V Power - Peak Pulse: 150W Power Line Protection: No Part Status: Active |
на замовлення 1439 шт: термін постачання 21-31 дні (днів) |
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PSM712-LF-T7 | UMW |
Description: TVS DIODE 12VWM 7VWM SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Current - Peak Pulse (10/1000µs): 7A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max), 7V (Max) Supplier Device Package: SOT-23 Bidirectional Channels: 2 Voltage - Breakdown (Min): 13.3V, 7.5V Voltage - Clamping (Max) @ Ipp: 25V, 15V Power - Peak Pulse: 150W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PSM712-LF-T7 | UMW |
TVS DIODE 12VWM 7VWM SOT23 |
на замовлення 10 шт: термін постачання 5 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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PT4115 | UMW |
Description: IC LED DRVR BUCK PWM 1.2A SOT89-Packaging: Tape & Reel (TR) Voltage - Output: 45V Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C Applications: Backlight, Lighting Current - Output / Channel: 1.2A Internal Switch(s): Yes Topology: Step-Down (Buck) Dimming: PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 30V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PT4115 | UMW |
Description: IC LED DRVR BUCK PWM 1.2A SOT89-Packaging: Cut Tape (CT) Voltage - Output: 45V Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C Applications: Backlight, Lighting Current - Output / Channel: 1.2A Internal Switch(s): Yes Topology: Step-Down (Buck) Dimming: PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 30V |
на замовлення 119 шт: термін постачання 21-31 дні (днів) |
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| PT4115 | UMW |
SOT89-5 LED Drivers |
на замовлення 200 шт: термін постачання 5 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
| PT4115 | UMW |
Step-Down Switching Regulator for driving LEDs, output current 1.2A, supply voltage 6?30V, temperature range -25?85°C; Replacement for: PT4115-89E, PT4115B89E-B; PT4115 UMW UIPT4115 UMWкількість в упаковці: 100 шт |
на замовлення 1200 шт: термін постачання 28-31 дні (днів) |
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RFD12N06RLESM9A | UMW |
Description: MOSFET N-CH 60V 18A DPAKPackaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RFD12N06RLESM9A | UMW |
Description: MOSFET N-CH 60V 18A DPAKPackaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RFD16N05LSM9A | UMW |
Description: MOSFET N-CH 50V 16A DPAKPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RFD16N05LSM9A | UMW |
Description: MOSFET N-CH 50V 16A DPAKPackaging: Cut Tape (CT) |
на замовлення 700 шт: термін постачання 21-31 дні (днів) |
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| SA555DR | UMW |
Timer; Bipolar; 1MHz; 10mA; 4,5V~16V; -40°C ~ 85°C; Equivalent: SA555D; SA555DT; SA555DX; SA555DR; SA555DE4; SA555DG4; SA555DRE4; SA555DR UMW T 555 d UMWкількість в упаковці: 100 шт |
на замовлення 270 шт: термін постачання 28-31 дні (днів) |
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SD03C | UMW |
Description: TVS DIODE 3.3VWM 16VC SOD323Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: General Purpose Current - Peak Pulse (10/1000µs): 20A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 350W Power Line Protection: No Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SD03C | UMW |
Description: TVS DIODE 3.3VWM 16VC SOD323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: General Purpose Current - Peak Pulse (10/1000µs): 20A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 350W Power Line Protection: No Part Status: Active |
на замовлення 1472 шт: термін постачання 21-31 дні (днів) |
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| SG3524DR | UMW |
Regulating Pulse Width Modulator 100mA 40V 300kHz 0?70°C Replacement for: SG3524D, SG3524DR, SG3524DRE4 SG3524DR UMW ULSG3524d UMWкількість в упаковці: 50 шт |
на замовлення 300 шт: термін постачання 28-31 дні (днів) |
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| SG3525AP | UMW |
Regulating Pulse Width Modulator 400mA 35V 400kHz 0~70°C Replacement for: SG3525AP, SG3525AP013TR, E-SG3525AP SG3525AP UMW ULSG3525a smd UMWкількість в упаковці: 50 шт |
на замовлення 300 шт: термін постачання 28-31 дні (днів) |
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| SG3525AP | UMW |
Regulating Pulse Width Modulator 400mA 35V 400kHz 0~70°C Replacement for: SG3525AP, SG3525AP013TR, E-SG3525AP SG3525AP UMW ULSG3525a smd UMWкількість в упаковці: 50 шт |
на замовлення 23 шт: термін постачання 28-31 дні (днів) |
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SGM3157 | UMW |
Description: IC SW SPDT-NO/NCX1 7OHM SC70-6Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 7Ohm (Typ) -3db Bandwidth: 350MHz Supplier Device Package: SC70-6 Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT - NO/NC Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm (Typ) Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 2.3pF Current - Leakage (IS(off)) (Max): 100nA (Max) Part Status: Active Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SGM3157 | UMW |
Description: IC SW SPDT-NO/NCX1 7OHM SC70-6Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 7Ohm (Typ) -3db Bandwidth: 350MHz Supplier Device Package: SC70-6 Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT - NO/NC Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm (Typ) Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 2.3pF Current - Leakage (IS(off)) (Max): 100nA (Max) Part Status: Active Number of Circuits: 1 |
на замовлення 2687 шт: термін постачання 21-31 дні (днів) |
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SI2300A | UMW |
Description: 20V 6A 25MR@4.5V,6A 1V@50A N CHAPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 10 V |
на замовлення 2129 шт: термін постачання 21-31 дні (днів) |
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SI2300A | UMW |
Description: 20V 6A 25MR@4.5V,6A 1V@50A N CHAPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 50µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2301A | UMW |
Description: 20V 2.8A 400MW 142MR@2.5V,2A 1V@Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
на замовлення 671 шт: термін постачання 21-31 дні (днів) |
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SI2301A | UMW |
Description: 20V 2.8A 400MW 142MR@2.5V,2A 1V@Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2301B | UMW |
Description: MOSFET P-CH 20V 2.2A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2301B | UMW |
Description: MOSFET P-CH 20V 2.2A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2302A | UMW |
Description: 20V 2.8A 1.25W 115MR@2.5V,3.1A 1Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
на замовлення 1372 шт: термін постачання 21-31 дні (днів) |
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SI2302A | UMW |
Description: 20V 2.8A 1.25W 115MR@2.5V,3.1A 1Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2302B | UMW |
Description: MOSFET N-CH 60V 4A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 50µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2302B | UMW |
Description: MOSFET N-CH 60V 4A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 50µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2303 | UMW |
Description: SOT-23-3 POWER MOSFETS ROHSPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 1.7A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2303 | UMW |
Description: SOT-23-3 POWER MOSFETS ROHSPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 1.7A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V |
на замовлення 456 шт: термін постачання 21-31 дні (днів) |
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SI2304A | UMW |
Description: SOT-23 N-CHANNEL POWER MOSFETS RPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 3.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2304A | UMW |
Description: SOT-23 N-CHANNEL POWER MOSFETS RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 3.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V |
на замовлення 2871 шт: термін постачання 21-31 дні (днів) |
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SI2305A | UMW |
Description: 20V 4.2A 65MR@4.5V,4.2A 1.38W 50Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 500mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2305A | UMW |
Description: 20V 4.2A 65MR@4.5V,4.2A 1.38W 50Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 500mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 15 V |
на замовлення 2267 шт: термін постачання 21-31 дні (днів) |
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SI2306A | UMW |
Description: 30V 3.5A 1.25W 57MR@10V,3.5A 3V@Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V |
на замовлення 2272 шт: термін постачання 21-31 дні (днів) |
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SI2306A | UMW |
Description: 30V 3.5A 1.25W 57MR@10V,3.5A 3V@Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2307A | UMW |
Description: 30V 3A 1.25W 80MR@10V,3A 3V@250APackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2307A | UMW |
Description: 30V 3A 1.25W 80MR@10V,3A 3V@250APackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 15 V |
на замовлення 2177 шт: термін постачання 21-31 дні (днів) |
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SI2308A | UMW |
Description: 60V 2A 1.25W 160MR@10V,2A 3V@250Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2308A | UMW |
Description: 60V 2A 1.25W 160MR@10V,2A 3V@250Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
на замовлення 2752 шт: термін постачання 21-31 дні (днів) |
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SI2309A | UMW |
Description: MOSFET P-CH 60V 1.25A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2309A | UMW |
Description: MOSFET P-CH 60V 1.25A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V |
на замовлення 2460 шт: термін постачання 21-31 дні (днів) |
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SI2310A | UMW |
Description: 60V 3A 90MR@10V,3A 1.38W 3V@250APackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V |
на замовлення 2580 шт: термін постачання 21-31 дні (днів) |
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SI2310A | UMW |
Description: 60V 3A 90MR@10V,3A 1.38W 3V@250APackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2312A | UMW |
Description: 20V 3.77A 750MW 33MR@4.5V,5A 850Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2312A | UMW |
Description: 20V 3.77A 750MW 33MR@4.5V,5A 850Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V |
на замовлення 2580 шт: термін постачання 21-31 дні (днів) |
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SI2318A | UMW |
Description: SOT-23 N-CHANNEL POWER MOSFETS RPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2318A | UMW |
Description: SOT-23 N-CHANNEL POWER MOSFETS RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V |
на замовлення 2064 шт: термін постачання 21-31 дні (днів) |
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SI2319A | UMW |
Description: MOSFET P-CH 40V 4.4A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 4.4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2319A | UMW |
Description: MOSFET P-CH 40V 4.4A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 4.4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V |
на замовлення 2296 шт: термін постачання 21-31 дні (днів) |
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SI2323DS | UMW |
Description: MOSFET P-CH 20V 3.7A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI2323DS | UMW |
Description: MOSFET P-CH 20V 3.7A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V |
на замовлення 1717 шт: термін постачання 21-31 дні (днів) |
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| PESD3V3L1BA |
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Виробник: UMW
Description: TVS DIODE 3.3VWM 24VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 480W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 24VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 480W
Power Line Protection: No
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.02 грн |
| 6000+ | 4.36 грн |
| PESD3V3L1BA |
![]() |
Виробник: UMW
Description: TVS DIODE 3.3VWM 24VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 480W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 24VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 480W
Power Line Protection: No
Part Status: Active
на замовлення 1926 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.24 грн |
| 23+ | 14.08 грн |
| 100+ | 8.81 грн |
| 500+ | 6.12 грн |
| 1000+ | 5.43 грн |
| PESD5V0V1BL |
![]() |
Виробник: UMW
Description: TVS DIODE 5VWM 12.5VC SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: Ethernet, Telecom
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-882
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 45W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Description: TVS DIODE 5VWM 12.5VC SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: Ethernet, Telecom
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-882
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 45W
Power Line Protection: No
Part Status: Active
Grade: Automotive
на замовлення 1419 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.21 грн |
| 38+ | 8.61 грн |
| 100+ | 5.35 грн |
| 500+ | 3.66 грн |
| 1000+ | 3.22 грн |
| PESD5V0V1BL |
![]() |
Виробник: UMW
Description: TVS DIODE 5VWM 12.5VC SOD882
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: Ethernet, Telecom
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-882
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 45W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Description: TVS DIODE 5VWM 12.5VC SOD882
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: Ethernet, Telecom
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-882
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 45W
Power Line Protection: No
Part Status: Active
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.
| PS2501 |
Виробник: UMW
DIP-4, CTR=80...600%, -55...+100C
DIP-4, CTR=80...600%, -55...+100C
на замовлення 110 шт:
термін постачання 5 дні (днів)В кошику од. на суму грн.
| PS2701-1 |
![]() |
Виробник: UMW
(SOP-4)
(SOP-4)
на замовлення 140 шт:
термін постачання 5 дні (днів)В кошику од. на суму грн.
| PSM712-LF-T7 |
![]() |
Виробник: UMW
Description: TVS DIODE 12VWM 7VWM SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max), 7V (Max)
Supplier Device Package: SOT-23
Bidirectional Channels: 2
Voltage - Breakdown (Min): 13.3V, 7.5V
Voltage - Clamping (Max) @ Ipp: 25V, 15V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 12VWM 7VWM SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max), 7V (Max)
Supplier Device Package: SOT-23
Bidirectional Channels: 2
Voltage - Breakdown (Min): 13.3V, 7.5V
Voltage - Clamping (Max) @ Ipp: 25V, 15V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 28.56 грн |
| 6000+ | 26.83 грн |
| 9000+ | 26.50 грн |
| 15000+ | 24.52 грн |
| 21000+ | 24.32 грн |
| PSM712-LF-T7 |
![]() |
Виробник: UMW
Description: TVS DIODE 12VWM 7VWM SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max), 7V (Max)
Supplier Device Package: SOT-23
Bidirectional Channels: 2
Voltage - Breakdown (Min): 13.3V, 7.5V
Voltage - Clamping (Max) @ Ipp: 25V, 15V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 12VWM 7VWM SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max), 7V (Max)
Supplier Device Package: SOT-23
Bidirectional Channels: 2
Voltage - Breakdown (Min): 13.3V, 7.5V
Voltage - Clamping (Max) @ Ipp: 25V, 15V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
на замовлення 1439 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 61.01 грн |
| 10+ | 42.34 грн |
| 25+ | 38.15 грн |
| 100+ | 31.44 грн |
| 250+ | 29.36 грн |
| 500+ | 28.11 грн |
| 1000+ | 26.64 грн |
| PSM712-LF-T7 |
![]() |
Виробник: UMW
Description: TVS DIODE 12VWM 7VWM SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max), 7V (Max)
Supplier Device Package: SOT-23
Bidirectional Channels: 2
Voltage - Breakdown (Min): 13.3V, 7.5V
Voltage - Clamping (Max) @ Ipp: 25V, 15V
Power - Peak Pulse: 150W
Power Line Protection: No
Description: TVS DIODE 12VWM 7VWM SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max), 7V (Max)
Supplier Device Package: SOT-23
Bidirectional Channels: 2
Voltage - Breakdown (Min): 13.3V, 7.5V
Voltage - Clamping (Max) @ Ipp: 25V, 15V
Power - Peak Pulse: 150W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| PSM712-LF-T7 |
![]() |
Виробник: UMW
TVS DIODE 12VWM 7VWM SOT23
TVS DIODE 12VWM 7VWM SOT23
на замовлення 10 шт:
термін постачання 5 дні (днів)В кошику од. на суму грн.
| PT4115 |
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Виробник: UMW
Description: IC LED DRVR BUCK PWM 1.2A SOT89-
Packaging: Tape & Reel (TR)
Voltage - Output: 45V
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C
Applications: Backlight, Lighting
Current - Output / Channel: 1.2A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 30V
Description: IC LED DRVR BUCK PWM 1.2A SOT89-
Packaging: Tape & Reel (TR)
Voltage - Output: 45V
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C
Applications: Backlight, Lighting
Current - Output / Channel: 1.2A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 30V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 9.00 грн |
| 2000+ | 8.33 грн |
| 3000+ | 8.17 грн |
| PT4115 |
![]() |
Виробник: UMW
Description: IC LED DRVR BUCK PWM 1.2A SOT89-
Packaging: Cut Tape (CT)
Voltage - Output: 45V
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C
Applications: Backlight, Lighting
Current - Output / Channel: 1.2A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 30V
Description: IC LED DRVR BUCK PWM 1.2A SOT89-
Packaging: Cut Tape (CT)
Voltage - Output: 45V
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C
Applications: Backlight, Lighting
Current - Output / Channel: 1.2A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 30V
на замовлення 119 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.90 грн |
| 24+ | 13.60 грн |
| 27+ | 12.07 грн |
| 100+ | 9.74 грн |
| PT4115 |
![]() |
Виробник: UMW
SOT89-5 LED Drivers
SOT89-5 LED Drivers
на замовлення 200 шт:
термін постачання 5 дні (днів)В кошику од. на суму грн.
| PT4115 |
![]() |
Виробник: UMW
Step-Down Switching Regulator for driving LEDs, output current 1.2A, supply voltage 6?30V, temperature range -25?85°C; Replacement for: PT4115-89E, PT4115B89E-B; PT4115 UMW UIPT4115 UMW
кількість в упаковці: 100 шт
Step-Down Switching Regulator for driving LEDs, output current 1.2A, supply voltage 6?30V, temperature range -25?85°C; Replacement for: PT4115-89E, PT4115B89E-B; PT4115 UMW UIPT4115 UMW
кількість в упаковці: 100 шт
на замовлення 1200 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 6.80 грн |
| RFD12N06RLESM9A |
![]() |
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 21.78 грн |
| RFD16N05LSM9A |
![]() |
на замовлення 700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.88 грн |
| 10+ | 43.30 грн |
| 100+ | 28.24 грн |
| 500+ | 20.43 грн |
| SA555DR |
![]() |
Виробник: UMW
Timer; Bipolar; 1MHz; 10mA; 4,5V~16V; -40°C ~ 85°C; Equivalent: SA555D; SA555DT; SA555DX; SA555DR; SA555DE4; SA555DG4; SA555DRE4; SA555DR UMW T 555 d UMW
кількість в упаковці: 100 шт
Timer; Bipolar; 1MHz; 10mA; 4,5V~16V; -40°C ~ 85°C; Equivalent: SA555D; SA555DT; SA555DX; SA555DR; SA555DE4; SA555DG4; SA555DRE4; SA555DR UMW T 555 d UMW
кількість в упаковці: 100 шт
на замовлення 270 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 4.80 грн |
| SD03C |
![]() |
Виробник: UMW
Description: TVS DIODE 3.3VWM 16VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 16VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.90 грн |
| SD03C |
![]() |
Виробник: UMW
Description: TVS DIODE 3.3VWM 16VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 16VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Active
на замовлення 1472 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.10 грн |
| 16+ | 20.85 грн |
| 100+ | 13.20 грн |
| 500+ | 9.25 грн |
| 1000+ | 8.24 грн |
| SG3524DR |
![]() |
Виробник: UMW
Regulating Pulse Width Modulator 100mA 40V 300kHz 0?70°C Replacement for: SG3524D, SG3524DR, SG3524DRE4 SG3524DR UMW ULSG3524d UMW
кількість в упаковці: 50 шт
Regulating Pulse Width Modulator 100mA 40V 300kHz 0?70°C Replacement for: SG3524D, SG3524DR, SG3524DRE4 SG3524DR UMW ULSG3524d UMW
кількість в упаковці: 50 шт
на замовлення 300 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 9.83 грн |
| SG3525AP |
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Виробник: UMW
Regulating Pulse Width Modulator 400mA 35V 400kHz 0~70°C Replacement for: SG3525AP, SG3525AP013TR, E-SG3525AP SG3525AP UMW ULSG3525a smd UMW
кількість в упаковці: 50 шт
Regulating Pulse Width Modulator 400mA 35V 400kHz 0~70°C Replacement for: SG3525AP, SG3525AP013TR, E-SG3525AP SG3525AP UMW ULSG3525a smd UMW
кількість в упаковці: 50 шт
на замовлення 300 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 11.84 грн |
| SG3525AP |
![]() |
Виробник: UMW
Regulating Pulse Width Modulator 400mA 35V 400kHz 0~70°C Replacement for: SG3525AP, SG3525AP013TR, E-SG3525AP SG3525AP UMW ULSG3525a smd UMW
кількість в упаковці: 50 шт
Regulating Pulse Width Modulator 400mA 35V 400kHz 0~70°C Replacement for: SG3525AP, SG3525AP013TR, E-SG3525AP SG3525AP UMW ULSG3525a smd UMW
кількість в упаковці: 50 шт
на замовлення 23 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 11.84 грн |
| SGM3157 |
![]() |
Виробник: UMW
Description: IC SW SPDT-NO/NCX1 7OHM SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 7Ohm (Typ)
-3db Bandwidth: 350MHz
Supplier Device Package: SC70-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT - NO/NC
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm (Typ)
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 2.3pF
Current - Leakage (IS(off)) (Max): 100nA (Max)
Part Status: Active
Number of Circuits: 1
Description: IC SW SPDT-NO/NCX1 7OHM SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 7Ohm (Typ)
-3db Bandwidth: 350MHz
Supplier Device Package: SC70-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT - NO/NC
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm (Typ)
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 2.3pF
Current - Leakage (IS(off)) (Max): 100nA (Max)
Part Status: Active
Number of Circuits: 1
товару немає в наявності
В кошику
од. на суму грн.
| SGM3157 |
![]() |
Виробник: UMW
Description: IC SW SPDT-NO/NCX1 7OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 7Ohm (Typ)
-3db Bandwidth: 350MHz
Supplier Device Package: SC70-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT - NO/NC
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm (Typ)
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 2.3pF
Current - Leakage (IS(off)) (Max): 100nA (Max)
Part Status: Active
Number of Circuits: 1
Description: IC SW SPDT-NO/NCX1 7OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 7Ohm (Typ)
-3db Bandwidth: 350MHz
Supplier Device Package: SC70-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT - NO/NC
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm (Typ)
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 2.3pF
Current - Leakage (IS(off)) (Max): 100nA (Max)
Part Status: Active
Number of Circuits: 1
на замовлення 2687 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 32.60 грн |
| 15+ | 21.89 грн |
| 25+ | 19.57 грн |
| 100+ | 15.91 грн |
| 250+ | 14.75 грн |
| 500+ | 14.05 грн |
| 1000+ | 13.25 грн |
| SI2300A |
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Виробник: UMW
Description: 20V 6A 25MR@4.5V,6A 1V@50A N CHA
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 10 V
Description: 20V 6A 25MR@4.5V,6A 1V@50A N CHA
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 10 V
на замовлення 2129 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.57 грн |
| 22+ | 15.05 грн |
| 25+ | 13.33 грн |
| 100+ | 10.75 грн |
| 250+ | 9.92 грн |
| 500+ | 9.42 грн |
| 1000+ | 8.86 грн |
| SI2300A |
![]() |
Виробник: UMW
Description: 20V 6A 25MR@4.5V,6A 1V@50A N CHA
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 10 V
Description: 20V 6A 25MR@4.5V,6A 1V@50A N CHA
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 10 V
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| SI2301A |
![]() |
Виробник: UMW
Description: 20V 2.8A 400MW 142MR@2.5V,2A 1V@
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Description: 20V 2.8A 400MW 142MR@2.5V,2A 1V@
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
на замовлення 671 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.88 грн |
| 31+ | 10.46 грн |
| 35+ | 9.24 грн |
| 100+ | 7.41 грн |
| 250+ | 6.81 грн |
| 500+ | 6.44 грн |
| SI2301A |
![]() |
Виробник: UMW
Description: 20V 2.8A 400MW 142MR@2.5V,2A 1V@
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Description: 20V 2.8A 400MW 142MR@2.5V,2A 1V@
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
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| SI2301B |
![]() |
Виробник: UMW
Description: MOSFET P-CH 20V 2.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET P-CH 20V 2.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
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| SI2301B |
![]() |
Виробник: UMW
Description: MOSFET P-CH 20V 2.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET P-CH 20V 2.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
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| SI2302A |
![]() |
Виробник: UMW
Description: 20V 2.8A 1.25W 115MR@2.5V,3.1A 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: 20V 2.8A 1.25W 115MR@2.5V,3.1A 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
на замовлення 1372 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.37 грн |
| 39+ | 8.45 грн |
| 44+ | 7.44 грн |
| 100+ | 5.91 грн |
| 250+ | 5.42 грн |
| 500+ | 5.12 грн |
| 1000+ | 4.79 грн |
| SI2302A |
![]() |
Виробник: UMW
Description: 20V 2.8A 1.25W 115MR@2.5V,3.1A 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: 20V 2.8A 1.25W 115MR@2.5V,3.1A 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
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| SI2302B |
![]() |
Виробник: UMW
Description: MOSFET N-CH 60V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET N-CH 60V 4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
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| SI2302B |
![]() |
Виробник: UMW
Description: MOSFET N-CH 60V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET N-CH 60V 4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
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| SI2303 |
![]() |
Виробник: UMW
Description: SOT-23-3 POWER MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.7A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Description: SOT-23-3 POWER MOSFETS ROHS
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.7A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
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| SI2303 |
![]() |
Виробник: UMW
Description: SOT-23-3 POWER MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.7A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Description: SOT-23-3 POWER MOSFETS ROHS
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.7A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
на замовлення 456 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.70 грн |
| 43+ | 7.57 грн |
| 49+ | 6.63 грн |
| 100+ | 5.29 грн |
| 250+ | 4.83 грн |
| SI2304A |
![]() |
Виробник: UMW
Description: SOT-23 N-CHANNEL POWER MOSFETS R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
Description: SOT-23 N-CHANNEL POWER MOSFETS R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
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| SI2304A |
![]() |
Виробник: UMW
Description: SOT-23 N-CHANNEL POWER MOSFETS R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
Description: SOT-23 N-CHANNEL POWER MOSFETS R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
на замовлення 2871 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.70 грн |
| 44+ | 7.49 грн |
| 49+ | 6.60 грн |
| 100+ | 5.24 грн |
| 250+ | 4.79 грн |
| 500+ | 4.52 грн |
| 1000+ | 4.23 грн |
| SI2305A |
![]() |
Виробник: UMW
Description: 20V 4.2A 65MR@4.5V,4.2A 1.38W 50
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 500mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 15 V
Description: 20V 4.2A 65MR@4.5V,4.2A 1.38W 50
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 500mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| SI2305A |
![]() |
Виробник: UMW
Description: 20V 4.2A 65MR@4.5V,4.2A 1.38W 50
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 500mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 15 V
Description: 20V 4.2A 65MR@4.5V,4.2A 1.38W 50
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 500mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 15 V
на замовлення 2267 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 15.04 грн |
| 32+ | 10.06 грн |
| 37+ | 8.89 грн |
| 100+ | 7.13 грн |
| 250+ | 6.54 грн |
| 500+ | 6.19 грн |
| 1000+ | 5.81 грн |
| SI2306A |
![]() |
Виробник: UMW
Description: 30V 3.5A 1.25W 57MR@10V,3.5A 3V@
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
Description: 30V 3.5A 1.25W 57MR@10V,3.5A 3V@
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
на замовлення 2272 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.37 грн |
| 36+ | 9.09 грн |
| 41+ | 8.02 грн |
| 100+ | 6.41 грн |
| 250+ | 5.88 грн |
| 500+ | 5.56 грн |
| 1000+ | 5.20 грн |
| SI2306A |
![]() |
Виробник: UMW
Description: 30V 3.5A 1.25W 57MR@10V,3.5A 3V@
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
Description: 30V 3.5A 1.25W 57MR@10V,3.5A 3V@
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
товару немає в наявності
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од. на суму грн.
| SI2307A |
![]() |
Виробник: UMW
Description: 30V 3A 1.25W 80MR@10V,3A 3V@250A
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 15 V
Description: 30V 3A 1.25W 80MR@10V,3A 3V@250A
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| SI2307A |
![]() |
Виробник: UMW
Description: 30V 3A 1.25W 80MR@10V,3A 3V@250A
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 15 V
Description: 30V 3A 1.25W 80MR@10V,3A 3V@250A
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 15 V
на замовлення 2177 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.72 грн |
| 30+ | 11.03 грн |
| 34+ | 9.75 грн |
| 100+ | 7.83 грн |
| 250+ | 7.19 грн |
| 500+ | 6.81 грн |
| 1000+ | 6.39 грн |
| SI2308A |
![]() |
Виробник: UMW
Description: 60V 2A 1.25W 160MR@10V,2A 3V@250
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Description: 60V 2A 1.25W 160MR@10V,2A 3V@250
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| SI2308A |
![]() |
Виробник: UMW
Description: 60V 2A 1.25W 160MR@10V,2A 3V@250
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Description: 60V 2A 1.25W 160MR@10V,2A 3V@250
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 2752 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 15.04 грн |
| 33+ | 9.82 грн |
| 38+ | 8.66 грн |
| 100+ | 6.92 грн |
| 250+ | 6.35 грн |
| 500+ | 6.01 грн |
| 1000+ | 5.63 грн |
| SI2309A |
![]() |
Виробник: UMW
Description: MOSFET P-CH 60V 1.25A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Description: MOSFET P-CH 60V 1.25A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
товару немає в наявності
В кошику
од. на суму грн.
| SI2309A |
![]() |
Виробник: UMW
Description: MOSFET P-CH 60V 1.25A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Description: MOSFET P-CH 60V 1.25A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
на замовлення 2460 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.75 грн |
| 21+ | 15.78 грн |
| 100+ | 9.88 грн |
| 500+ | 6.88 грн |
| 1000+ | 6.11 грн |
| SI2310A |
![]() |
Виробник: UMW
Description: 60V 3A 90MR@10V,3A 1.38W 3V@250A
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
Description: 60V 3A 90MR@10V,3A 1.38W 3V@250A
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
на замовлення 2580 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.63 грн |
| 14+ | 24.23 грн |
| 25+ | 19.83 грн |
| 100+ | 14.00 грн |
| 250+ | 11.74 грн |
| 500+ | 10.34 грн |
| 1000+ | 9.02 грн |
| SI2310A |
![]() |
Виробник: UMW
Description: 60V 3A 90MR@10V,3A 1.38W 3V@250A
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
Description: 60V 3A 90MR@10V,3A 1.38W 3V@250A
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
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| SI2312A |
![]() |
Виробник: UMW
Description: 20V 3.77A 750MW 33MR@4.5V,5A 850
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Description: 20V 3.77A 750MW 33MR@4.5V,5A 850
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
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| SI2312A |
![]() |
Виробник: UMW
Description: 20V 3.77A 750MW 33MR@4.5V,5A 850
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Description: 20V 3.77A 750MW 33MR@4.5V,5A 850
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
на замовлення 2580 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.70 грн |
| 43+ | 7.57 грн |
| 49+ | 6.63 грн |
| 100+ | 5.29 грн |
| 250+ | 4.83 грн |
| 500+ | 4.56 грн |
| 1000+ | 4.27 грн |
| SI2318A |
![]() |
Виробник: UMW
Description: SOT-23 N-CHANNEL POWER MOSFETS R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
Description: SOT-23 N-CHANNEL POWER MOSFETS R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
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| SI2318A |
![]() |
Виробник: UMW
Description: SOT-23 N-CHANNEL POWER MOSFETS R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
Description: SOT-23 N-CHANNEL POWER MOSFETS R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
на замовлення 2064 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.94 грн |
| 16+ | 21.09 грн |
| 100+ | 13.38 грн |
| 500+ | 9.42 грн |
| 1000+ | 8.41 грн |
| SI2319A |
![]() |
Виробник: UMW
Description: MOSFET P-CH 40V 4.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Description: MOSFET P-CH 40V 4.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
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| SI2319A |
![]() |
Виробник: UMW
Description: MOSFET P-CH 40V 4.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Description: MOSFET P-CH 40V 4.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
на замовлення 2296 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.76 грн |
| 18+ | 18.59 грн |
| 100+ | 11.73 грн |
| 500+ | 8.22 грн |
| 1000+ | 7.32 грн |
| SI2323DS |
![]() |
Виробник: UMW
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
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| SI2323DS |
![]() |
Виробник: UMW
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
на замовлення 1717 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.27 грн |
| 17+ | 19.80 грн |
| 100+ | 12.53 грн |
| 500+ | 8.78 грн |
| 1000+ | 7.82 грн |



















