| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SI2306A | UMW |
Description: 30V 3.5A 1.25W 57MR@10V,3.5A 3V@Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V |
на замовлення 1766 шт: термін постачання 21-31 дні (днів) |
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SI2307A | UMW |
Description: 30V 3A 1.25W 80MR@10V,3A 3V@250APackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SI2307A | UMW |
Description: 30V 3A 1.25W 80MR@10V,3A 3V@250APackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 15 V |
на замовлення 2037 шт: термін постачання 21-31 дні (днів) |
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SI2308A | UMW |
Description: 60V 2A 1.25W 160MR@10V,2A 3V@250Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SI2308A | UMW |
Description: 60V 2A 1.25W 160MR@10V,2A 3V@250Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
на замовлення 2128 шт: термін постачання 21-31 дні (днів) |
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SI2309A | UMW |
Description: MOSFET P-CH 60V 1.25A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SI2309A | UMW |
Description: MOSFET P-CH 60V 1.25A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V |
на замовлення 2305 шт: термін постачання 21-31 дні (днів) |
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SI2310A | UMW |
Description: 60V 3A 90MR@10V,3A 1.38W 3V@250APackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SI2310A | UMW |
Description: 60V 3A 90MR@10V,3A 1.38W 3V@250APackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V |
на замовлення 2580 шт: термін постачання 21-31 дні (днів) |
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SI2312A | UMW |
Description: 20V 3.77A 750MW 33MR@4.5V,5A 850Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SI2312A | UMW |
Description: 20V 3.77A 750MW 33MR@4.5V,5A 850Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V |
на замовлення 2306 шт: термін постачання 21-31 дні (днів) |
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SI2318A | UMW |
Description: SOT-23 N-CHANNEL POWER MOSFETS RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V |
на замовлення 2064 шт: термін постачання 21-31 дні (днів) |
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SI2318A | UMW |
Description: SOT-23 N-CHANNEL POWER MOSFETS RPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SI2319A | UMW |
Description: MOSFET P-CH 40V 4.4A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 4.4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SI2319A | UMW |
Description: MOSFET P-CH 40V 4.4A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 4.4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V |
на замовлення 2296 шт: термін постачання 21-31 дні (днів) |
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SI2323DS | UMW |
Description: MOSFET P-CH 20V 3.7A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V |
на замовлення 2656 шт: термін постачання 21-31 дні (днів) |
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SI2323DS | UMW |
Description: MOSFET P-CH 20V 3.7A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SI2328A | UMW |
Description: SOT-23 N-CHANNEL POWER MOSFETS RPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta) Rds On (Max) @ Id, Vgs: 245mOhm @ 1.5A, 10V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SI2328A | UMW |
Description: SOT-23 N-CHANNEL POWER MOSFETS RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta) Rds On (Max) @ Id, Vgs: 245mOhm @ 1.5A, 10V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V |
на замовлення 2123 шт: термін постачання 21-31 дні (днів) |
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SI2333CDS | UMW |
Description: MOSFET P-CH 12V 7.1A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SI2333CDS | UMW |
Description: MOSFET P-CH 12V 7.1A SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V |
на замовлення 585 шт: термін постачання 21-31 дні (днів) |
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SI4401BDY | UMW |
Description: MOSFET P-CH 40V 8.7A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SI4401BDY | UMW |
Description: MOSFET P-CH 40V 8.7A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V |
на замовлення 2940 шт: термін постачання 21-31 дні (днів) |
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SI4425DY | UMW |
Description: MOSFET P-CH 30V 8.7A/11.6A 8SOICPackaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SI4425DY | UMW |
Description: MOSFET P-CH 30V 8.7A/11.6A 8SOICPackaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SI4435DY | UMW |
Description: MOSFET P-CH 30V 8.8A 8SOICPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SI4435DY | UMW |
Description: MOSFET P-CH 30V 8.8A 8SOICPackaging: Cut Tape (CT) |
на замовлення 271 шт: термін постачання 21-31 дні (днів) |
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SI4948BEY | UMW |
Description: MOSFET 2P-CH 60V 2.4A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SI4948BEY | UMW |
Description: MOSFET 2P-CH 60V 2.4A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 2281 шт: термін постачання 21-31 дні (днів) |
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SI9945BDY | UMW |
Description: MOSFET 2N-CH 60V 4.3A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 3.1W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Rds On (Max) @ Id, Vgs: 36mOhm @ 4.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SI9945BDY | UMW |
Description: MOSFET 2N-CH 60V 4.3A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 3.1W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Rds On (Max) @ Id, Vgs: 36mOhm @ 4.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 2530 шт: термін постачання 21-31 дні (днів) |
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SI9948AEY | UMW |
Description: MOSFET 2P-CH 60V 5.3A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 4W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 5.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 15V Rds On (Max) @ Id, Vgs: 54mOhm @ 6.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SI9948AEY | UMW |
Description: MOSFET 2P-CH 60V 5.3A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 4W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 5.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 15V Rds On (Max) @ Id, Vgs: 54mOhm @ 6.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 2994 шт: термін постачання 21-31 дні (днів) |
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SM05 | UMW |
Description: SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: Telecom Current - Peak Pulse (10/1000µs): 17A Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 18V Power - Peak Pulse: 350W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SM05 | UMW |
Description: SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: Telecom Current - Peak Pulse (10/1000µs): 17A Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-23-3 (TO-236) Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 18V Power - Peak Pulse: 350W Power Line Protection: No |
на замовлення 1362 шт: термін постачання 21-31 дні (днів) |
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SM4027PSU | UMW |
Description: MOSFET P-CH 40V 50A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 17A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SM4027PSU | UMW |
Description: MOSFET P-CH 40V 50A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 17A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V |
на замовлення 2482 шт: термін постачання 21-31 дні (днів) |
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SMBJ28CA Код товару: 201163
Додати до обраних
Обраний товар
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UMW |
Діоди, діодні мости, стабілітрони > Діоди обмежувальні (cупрессори)Корпус: SMB (DO-214AA) Пікова потужність: 600 W Напруга пробою, Vbr: 34,4 V Постійна зворотня напруга, Vrm: 28 V Струм витоку, Irm: 5 µA Конструкція діода: Двоспрямований Монтаж: SMD |
у наявності: 945 шт
710 шт - склад
25 шт - РАДІОМАГ-Київ 70 шт - РАДІОМАГ-Львів 100 шт - РАДІОМАГ-Харків 40 шт - РАДІОМАГ-Дніпро |
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| SN65176BDR | UMW |
RS-485/RS-422 Transceiver, Half-Duplex, 10Mbps, 5V, -40?105°C Replacement for: SN65176BD, SN65176BDE4, SN65176BDG4, SN65176BDR, SN65176BDRE4, SN65176BDRG4 SN65176BDR UMW 65176bd UMWкількість в упаковці: 50 шт |
на замовлення 270 шт: термін постачання 28-31 дні (днів) |
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| SN65LBC184DR | UMW |
LP RS-485 Transceiver, Half-Duplex, 0.25Mbps, Transient protection, 5V, -40?85°C Replacement for: SN65LBC184D, SN65LBC184G4, SN65LBC184DR, SN65LBC184DRG4 SN65LBC184DR UMW UISN65lbc184d UMWкількість в упаковці: 25 шт |
на замовлення 100 шт: термін постачання 28-31 дні (днів) |
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SN74AUP1G08DRYR | UMW |
Description: IC GATE AND 1CH 2-INP DFN-6Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: 6-DFN (1x1.5) Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 5.6ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 200 nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SN74AUP1G08DRYR | UMW |
Description: IC GATE AND 1CH 2-INP DFN-6Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: 6-DFN (1x1.5) Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 5.6ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 200 nA |
на замовлення 4075 шт: термін постачання 21-31 дні (днів) |
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SN74LV1T08DBVR | UMW |
Description: IC GATE AND 1CH 2-INP SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.6V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SOT-23-5 Input Logic Level - High: 0.94V ~ 2.1V Input Logic Level - Low: 0.58V ~ 0.8V Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SN74LV1T08DBVR | UMW |
Description: IC GATE AND 1CH 2-INP SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.6V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SOT-23-5 Input Logic Level - High: 0.94V ~ 2.1V Input Logic Level - Low: 0.58V ~ 0.8V Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 1351 шт: термін постачання 21-31 дні (днів) |
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SN74LVC1G00DBVR | UMW |
Description: IC GATE NAND 1CH 2-INP SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-23-5 Input Logic Level - High: 1.7V Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF Number of Circuits: 1 Current - Quiescent (Max): 10 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SN74LVC1G00DBVR | UMW |
Description: IC GATE NAND 1CH 2-INP SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-23-5 Input Logic Level - High: 1.7V Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF Number of Circuits: 1 Current - Quiescent (Max): 10 µA |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
| SN74LVC1G00DBVR | UMW |
2-Input NAND Gate; 1,65V~5,5V; -40°C ~ 125°C; Equivalent: SN74LVC1G00DBVR; SN74LVC1G00DBVRE4; SN74LVC1G00DBVRG4; SN74LVC1G00DBVT; SN74LVC1G00DBVTE4; SN74LVC1G00DBVTG4; 74LVC1G00GV,125; 74LVC1G00W5-7; SN74LVC1G00DBVR UMW UT000lvc1g dbv UMWкількість в упаковці: 100 шт |
на замовлення 470 шт: термін постачання 28-31 дні (днів) |
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SN74LVC1G02DBVR | UMW |
Description: IC GATE NOR 1CH 2-INP SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-23-5 Max Propagation Delay @ V, Max CL: 6.1ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 10 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SN74LVC1G02DBVR | UMW |
Description: IC GATE NOR 1CH 2-INP SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-23-5 Max Propagation Delay @ V, Max CL: 6.1ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 10 µA |
на замовлення 2059 шт: термін постачання 21-31 дні (днів) |
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SN74LVC1G04DBVR | UMW |
Description: IC INVERTER 1CH 1-INP SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 1 Supplier Device Package: SOT-23-5 Input Logic Level - High: 1.07V ~ 3.85V Input Logic Level - Low: 0.58V ~ 1.65V Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF Number of Circuits: 1 Current - Quiescent (Max): 10 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SN74LVC1G04DBVR | UMW |
Description: IC INVERTER 1CH 1-INP SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 1 Supplier Device Package: SOT-23-5 Input Logic Level - High: 1.07V ~ 3.85V Input Logic Level - Low: 0.58V ~ 1.65V Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF Number of Circuits: 1 Current - Quiescent (Max): 10 µA |
на замовлення 1435 шт: термін постачання 21-31 дні (днів) |
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| SN74LVC1G04DBVR .C04F | UMW |
Single Inverter; Buffered Output; 1,65V~5,5V; -40°C ~ 125°C; Equivalent: SN74LVC1G04DBVR; SN74LVC1G04DBVRE4; SN74LVC1G04DBVRG4; SN74LVC1G04DBVT; SN74LVC1G04DBVTE4; SN74LVC1G04DBVTG4; 74LVC1G04GV,125; 74LVC1G04W5-7; SN74LVC1G04DBVR UMW UT004lvc1g dbv UMW кількість в упаковці: 10 шт |
на замовлення 280 шт: термін постачання 28-31 дні (днів) |
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| SN74LVC1G04DCKR | UMW |
Single Inverter; Buffered Output; 1,65V~5,5V; -40°C ~ 125°C; Equivalent: SN74LVC1G04DCKR; SN74LVC1G04DCKRE4; SN74LVC1G04DCKRG4; SN74LVC1G04DCKT; SN74LVC1G04DCKTE4; SN74LVC1G04DCKTG4; 74LVC1G04GW,125; 74LVC1G04GW,165; 74LVC1G04SE-7; SN74LVC1G04DCKR UMW UTкількість в упаковці: 100 шт |
на замовлення 975 шт: термін постачання 28-31 дні (днів) |
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| SN74LVC1G07DBVR | UMW |
Buffer; w/ Open Drain Output; 1,65V~5,5V; -40°C ~ 85°C; Equivalent: SN74LVC1G07DBVR; SN74LVC1G07DBVRE4; SN74LVC1G07DBVRG4; SN74LVC1G07DBVT; SN74LVC1G07DBVTE4; SN74LVC1G07DBVTG4; 74LVC1G07GV,125; 74LVC1G07W5-7 SN74LVC1G07DBVR UMW UT007lvc1g dbv UMWкількість в упаковці: 250 шт |
на замовлення 500 шт: термін постачання 28-31 дні (днів) |
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SN74LVC1G08DBVR | UMW |
Description: IC GATE AND 1CH 2-INP SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-23-5 Input Logic Level - High: 1.7V Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF Number of Circuits: 1 Current - Quiescent (Max): 10 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SN74LVC1G08DBVR | UMW |
Description: IC GATE AND 1CH 2-INP SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-23-5 Input Logic Level - High: 1.7V Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF Number of Circuits: 1 Current - Quiescent (Max): 10 µA |
на замовлення 2672 шт: термін постачання 21-31 дні (днів) |
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| SN74LVC1G08DBVR | UMW |
2-Input AND Gate; 1,65V~5,5V; -40°C ~ 125°C; Equivalent: SN74LVC1G08DBVR; SN74LVC1G08DBVRE4; SN74LVC1G08DBVRG4; SN74LVC1G08DBVT; SN74LVC1G08DBVTE4; SN74LVC1G08DBVTG4; 74LVC1G08GV,125; 74LVC1G08W5-7; SN74LVC1G08DBVR UMW UT008lvc1g dbv UMWкількість в упаковці: 100 шт |
на замовлення 500 шт: термін постачання 28-31 дні (днів) |
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| SN74LVC1G08DCKR | UMW |
2-Input AND Gate; 1,65V~5,5V; -40°C ~ 125°C; Equivalent: SN74LVC1G08DCKR; SN74LVC1G08DCKRE4; SN74LVC1G08DCKRG4; SN74LVC1G08DCKT; SN74LVC1G08DCKTE4; SN74LVC1G08DCKTG4; 74LVC1G08GW,125; 74LVC1G08GW,165; 74LVC1G08SE-7; SN74LVC1G08DCKR UMW UT008lvc1g dck UMWкількість в упаковці: 100 шт |
на замовлення 895 шт: термін постачання 28-31 дні (днів) |
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SN74LVC1G08DRYR | UMW |
Description: IC GATE AND 1CH 2-INP DFN-6Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 6-DFN (1x1.5) Input Logic Level - High: 1.7V Input Logic Level - Low: 0.7V Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF Number of Circuits: 1 Current - Quiescent (Max): 10 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SN74LVC1G08DRYR | UMW |
Description: IC GATE AND 1CH 2-INP DFN-6Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 105°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 6-DFN (1x1.5) Input Logic Level - High: 1.7V Input Logic Level - Low: 0.7V Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF Number of Circuits: 1 Current - Quiescent (Max): 10 µA |
на замовлення 4461 шт: термін постачання 21-31 дні (днів) |
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| SI2306A |
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Виробник: UMW
Description: 30V 3.5A 1.25W 57MR@10V,3.5A 3V@
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
Description: 30V 3.5A 1.25W 57MR@10V,3.5A 3V@
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 15 V
на замовлення 1766 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.36 грн |
| 35+ | 8.78 грн |
| 40+ | 7.75 грн |
| 100+ | 6.19 грн |
| 250+ | 5.68 грн |
| 500+ | 5.36 грн |
| 1000+ | 5.02 грн |
| SI2307A |
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Виробник: UMW
Description: 30V 3A 1.25W 80MR@10V,3A 3V@250A
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 15 V
Description: 30V 3A 1.25W 80MR@10V,3A 3V@250A
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.52 грн |
| 6000+ | 6.08 грн |
| SI2307A |
![]() |
Виробник: UMW
Description: 30V 3A 1.25W 80MR@10V,3A 3V@250A
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 15 V
Description: 30V 3A 1.25W 80MR@10V,3A 3V@250A
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 15 V
на замовлення 2037 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.51 грн |
| 29+ | 10.60 грн |
| 33+ | 9.42 грн |
| 100+ | 7.55 грн |
| 250+ | 6.94 грн |
| 500+ | 6.57 грн |
| 1000+ | 6.16 грн |
| SI2308A |
![]() |
Виробник: UMW
Description: 60V 2A 1.25W 160MR@10V,2A 3V@250
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Description: 60V 2A 1.25W 160MR@10V,2A 3V@250
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
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В кошику
од. на суму грн.
| SI2308A |
![]() |
Виробник: UMW
Description: 60V 2A 1.25W 160MR@10V,2A 3V@250
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Description: 60V 2A 1.25W 160MR@10V,2A 3V@250
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 2128 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.15 грн |
| 32+ | 9.46 грн |
| 37+ | 8.33 грн |
| 100+ | 6.69 грн |
| 250+ | 6.13 грн |
| 500+ | 5.80 грн |
| 1000+ | 5.44 грн |
| SI2309A |
![]() |
Виробник: UMW
Description: MOSFET P-CH 60V 1.25A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Description: MOSFET P-CH 60V 1.25A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
товару немає в наявності
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од. на суму грн.
| SI2309A |
![]() |
Виробник: UMW
Description: MOSFET P-CH 60V 1.25A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Description: MOSFET P-CH 60V 1.25A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
на замовлення 2305 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.16 грн |
| 21+ | 14.76 грн |
| 100+ | 9.27 грн |
| 500+ | 6.46 грн |
| 1000+ | 5.74 грн |
| SI2310A |
![]() |
Виробник: UMW
Description: 60V 3A 90MR@10V,3A 1.38W 3V@250A
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
Description: 60V 3A 90MR@10V,3A 1.38W 3V@250A
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| SI2310A |
![]() |
Виробник: UMW
Description: 60V 3A 90MR@10V,3A 1.38W 3V@250A
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
Description: 60V 3A 90MR@10V,3A 1.38W 3V@250A
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
на замовлення 2580 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.10 грн |
| 14+ | 22.79 грн |
| 25+ | 18.65 грн |
| 100+ | 13.17 грн |
| 250+ | 11.04 грн |
| 500+ | 9.73 грн |
| 1000+ | 8.49 грн |
| SI2312A |
![]() |
Виробник: UMW
Description: 20V 3.77A 750MW 33MR@4.5V,5A 850
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Description: 20V 3.77A 750MW 33MR@4.5V,5A 850
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
товару немає в наявності
В кошику
од. на суму грн.
| SI2312A |
![]() |
Виробник: UMW
Description: 20V 3.77A 750MW 33MR@4.5V,5A 850
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Description: 20V 3.77A 750MW 33MR@4.5V,5A 850
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
на замовлення 2306 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.01 грн |
| 44+ | 7.04 грн |
| 49+ | 6.21 грн |
| 100+ | 4.93 грн |
| 250+ | 4.51 грн |
| 500+ | 4.25 грн |
| 1000+ | 3.98 грн |
| SI2318A |
![]() |
Виробник: UMW
Description: SOT-23 N-CHANNEL POWER MOSFETS R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
Description: SOT-23 N-CHANNEL POWER MOSFETS R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
на замовлення 2064 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.81 грн |
| 16+ | 19.83 грн |
| 100+ | 12.58 грн |
| 500+ | 8.86 грн |
| 1000+ | 7.91 грн |
| SI2318A |
![]() |
Виробник: UMW
Description: SOT-23 N-CHANNEL POWER MOSFETS R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
Description: SOT-23 N-CHANNEL POWER MOSFETS R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
товару немає в наявності
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од. на суму грн.
| SI2319A |
![]() |
Виробник: UMW
Description: MOSFET P-CH 40V 4.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Description: MOSFET P-CH 40V 4.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
товару немає в наявності
В кошику
од. на суму грн.
| SI2319A |
![]() |
Виробник: UMW
Description: MOSFET P-CH 40V 4.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Description: MOSFET P-CH 40V 4.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
на замовлення 2296 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.87 грн |
| 18+ | 17.49 грн |
| 100+ | 11.04 грн |
| 500+ | 7.73 грн |
| 1000+ | 6.88 грн |
| SI2323DS |
![]() |
Виробник: UMW
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
на замовлення 2656 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.09 грн |
| 18+ | 17.11 грн |
| 100+ | 10.84 грн |
| 500+ | 7.59 грн |
| 1000+ | 6.76 грн |
| SI2323DS |
![]() |
Виробник: UMW
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.31 грн |
| SI2328A |
![]() |
Виробник: UMW
Description: SOT-23 N-CHANNEL POWER MOSFETS R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Rds On (Max) @ Id, Vgs: 245mOhm @ 1.5A, 10V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Description: SOT-23 N-CHANNEL POWER MOSFETS R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Rds On (Max) @ Id, Vgs: 245mOhm @ 1.5A, 10V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.32 грн |
| 6000+ | 4.95 грн |
| SI2328A |
![]() |
Виробник: UMW
Description: SOT-23 N-CHANNEL POWER MOSFETS R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Rds On (Max) @ Id, Vgs: 245mOhm @ 1.5A, 10V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Description: SOT-23 N-CHANNEL POWER MOSFETS R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Rds On (Max) @ Id, Vgs: 245mOhm @ 1.5A, 10V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
на замовлення 2123 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.36 грн |
| 35+ | 8.78 грн |
| 40+ | 7.75 грн |
| 100+ | 6.20 грн |
| 250+ | 5.69 грн |
| 500+ | 5.38 грн |
| 1000+ | 5.04 грн |
| SI2333CDS |
![]() |
Виробник: UMW
Description: MOSFET P-CH 12V 7.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Description: MOSFET P-CH 12V 7.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.36 грн |
| SI2333CDS |
![]() |
Виробник: UMW
Description: MOSFET P-CH 12V 7.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Description: MOSFET P-CH 12V 7.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
на замовлення 585 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.16 грн |
| 21+ | 14.84 грн |
| 100+ | 9.32 грн |
| 500+ | 6.50 грн |
| SI4401BDY |
![]() |
Виробник: UMW
Description: MOSFET P-CH 40V 8.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Description: MOSFET P-CH 40V 8.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
товару немає в наявності
В кошику
од. на суму грн.
| SI4401BDY |
![]() |
Виробник: UMW
Description: MOSFET P-CH 40V 8.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Description: MOSFET P-CH 40V 8.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.04 грн |
| 10+ | 39.44 грн |
| 100+ | 25.61 грн |
| 500+ | 18.45 грн |
| 1000+ | 16.65 грн |
| SI4425DY |
![]() |
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 12.04 грн |
| SI4435DY |
![]() |
на замовлення 271 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.96 грн |
| 11+ | 28.62 грн |
| 100+ | 18.40 грн |
| SI4948BEY |
![]() |
Виробник: UMW
Description: MOSFET 2P-CH 60V 2.4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2P-CH 60V 2.4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
товару немає в наявності
В кошику
од. на суму грн.
| SI4948BEY |
![]() |
Виробник: UMW
Description: MOSFET 2P-CH 60V 2.4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2P-CH 60V 2.4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 2281 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.33 грн |
| 10+ | 43.38 грн |
| 100+ | 28.33 грн |
| 500+ | 20.49 грн |
| 1000+ | 18.52 грн |
| SI9945BDY |
![]() |
Виробник: UMW
Description: MOSFET 2N-CH 60V 4.3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 3.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 60V 4.3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 3.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
товару немає в наявності
В кошику
од. на суму грн.
| SI9945BDY |
![]() |
Виробник: UMW
Description: MOSFET 2N-CH 60V 4.3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 3.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 60V 4.3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 3.1W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 2530 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.18 грн |
| 10+ | 41.64 грн |
| 100+ | 27.20 грн |
| 500+ | 19.71 грн |
| 1000+ | 17.83 грн |
| SI9948AEY |
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Виробник: UMW
Description: MOSFET 2P-CH 60V 5.3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 15V
Rds On (Max) @ Id, Vgs: 54mOhm @ 6.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2P-CH 60V 5.3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 15V
Rds On (Max) @ Id, Vgs: 54mOhm @ 6.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
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| SI9948AEY |
![]() |
Виробник: UMW
Description: MOSFET 2P-CH 60V 5.3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 15V
Rds On (Max) @ Id, Vgs: 54mOhm @ 6.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2P-CH 60V 5.3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 15V
Rds On (Max) @ Id, Vgs: 54mOhm @ 6.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 2994 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 84.91 грн |
| 10+ | 51.33 грн |
| 100+ | 33.69 грн |
| 500+ | 24.49 грн |
| 1000+ | 22.19 грн |
| SM05 |
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Виробник: UMW
Description: SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 350W
Power Line Protection: No
Description: SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 350W
Power Line Protection: No
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од. на суму грн.
| SM05 |
![]() |
Виробник: UMW
Description: SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 350W
Power Line Protection: No
Description: SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 17A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 350W
Power Line Protection: No
на замовлення 1362 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.59 грн |
| 18+ | 16.96 грн |
| 25+ | 14.90 грн |
| 100+ | 9.04 грн |
| 250+ | 7.49 грн |
| 500+ | 5.99 грн |
| 1000+ | 4.52 грн |
| SM4027PSU |
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Виробник: UMW
Description: MOSFET P-CH 40V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Description: MOSFET P-CH 40V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
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| SM4027PSU |
![]() |
Виробник: UMW
Description: MOSFET P-CH 40V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Description: MOSFET P-CH 40V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
на замовлення 2482 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.18 грн |
| 10+ | 41.49 грн |
| 100+ | 27.04 грн |
| 500+ | 19.56 грн |
| 1000+ | 17.68 грн |
| SMBJ28CA Код товару: 201163
Додати до обраних
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|
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Виробник: UMW
Діоди, діодні мости, стабілітрони > Діоди обмежувальні (cупрессори)
Корпус: SMB (DO-214AA)
Пікова потужність: 600 W
Напруга пробою, Vbr: 34,4 V
Постійна зворотня напруга, Vrm: 28 V
Струм витоку, Irm: 5 µA
Конструкція діода: Двоспрямований
Монтаж: SMD
Діоди, діодні мости, стабілітрони > Діоди обмежувальні (cупрессори)
Корпус: SMB (DO-214AA)
Пікова потужність: 600 W
Напруга пробою, Vbr: 34,4 V
Постійна зворотня напруга, Vrm: 28 V
Струм витоку, Irm: 5 µA
Конструкція діода: Двоспрямований
Монтаж: SMD
у наявності: 945 шт
710 шт - склад
25 шт - РАДІОМАГ-Київ
70 шт - РАДІОМАГ-Львів
100 шт - РАДІОМАГ-Харків
40 шт - РАДІОМАГ-Дніпро
25 шт - РАДІОМАГ-Київ
70 шт - РАДІОМАГ-Львів
100 шт - РАДІОМАГ-Харків
40 шт - РАДІОМАГ-Дніпро
| Кількість | Ціна |
|---|---|
| 6+ | 3.50 грн |
| 10+ | 2.90 грн |
| 100+ | 2.50 грн |
| SN65176BDR |
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Виробник: UMW
RS-485/RS-422 Transceiver, Half-Duplex, 10Mbps, 5V, -40?105°C Replacement for: SN65176BD, SN65176BDE4, SN65176BDG4, SN65176BDR, SN65176BDRE4, SN65176BDRG4 SN65176BDR UMW 65176bd UMW
кількість в упаковці: 50 шт
RS-485/RS-422 Transceiver, Half-Duplex, 10Mbps, 5V, -40?105°C Replacement for: SN65176BD, SN65176BDE4, SN65176BDG4, SN65176BDR, SN65176BDRE4, SN65176BDRG4 SN65176BDR UMW 65176bd UMW
кількість в упаковці: 50 шт
на замовлення 270 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 14.66 грн |
| SN65LBC184DR |
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Виробник: UMW
LP RS-485 Transceiver, Half-Duplex, 0.25Mbps, Transient protection, 5V, -40?85°C Replacement for: SN65LBC184D, SN65LBC184G4, SN65LBC184DR, SN65LBC184DRG4 SN65LBC184DR UMW UISN65lbc184d UMW
кількість в упаковці: 25 шт
LP RS-485 Transceiver, Half-Duplex, 0.25Mbps, Transient protection, 5V, -40?85°C Replacement for: SN65LBC184D, SN65LBC184G4, SN65LBC184DR, SN65LBC184DRG4 SN65LBC184DR UMW UISN65lbc184d UMW
кількість в упаковці: 25 шт
на замовлення 100 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 25.92 грн |
| SN74AUP1G08DRYR |
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Виробник: UMW
Description: IC GATE AND 1CH 2-INP DFN-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 6-DFN (1x1.5)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 5.6ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 200 nA
Description: IC GATE AND 1CH 2-INP DFN-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 6-DFN (1x1.5)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 5.6ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 200 nA
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од. на суму грн.
| SN74AUP1G08DRYR |
![]() |
Виробник: UMW
Description: IC GATE AND 1CH 2-INP DFN-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 6-DFN (1x1.5)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 5.6ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 200 nA
Description: IC GATE AND 1CH 2-INP DFN-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 6-DFN (1x1.5)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 5.6ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 200 nA
на замовлення 4075 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 14.94 грн |
| 31+ | 9.99 грн |
| 35+ | 8.87 грн |
| 100+ | 7.10 грн |
| 250+ | 6.53 грн |
| 500+ | 6.18 грн |
| 1000+ | 5.80 грн |
| 2500+ | 5.62 грн |
| SN74LV1T08DBVR |
![]() |
Виробник: UMW
Description: IC GATE AND 1CH 2-INP SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.6V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 0.94V ~ 2.1V
Input Logic Level - Low: 0.58V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.6V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 0.94V ~ 2.1V
Input Logic Level - Low: 0.58V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.05 грн |
| 6000+ | 4.71 грн |
| 9000+ | 4.63 грн |
| SN74LV1T08DBVR |
![]() |
Виробник: UMW
Description: IC GATE AND 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.6V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 0.94V ~ 2.1V
Input Logic Level - Low: 0.58V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.6V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 0.94V ~ 2.1V
Input Logic Level - Low: 0.58V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4.7ns @ 5V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 1351 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.58 грн |
| 37+ | 8.40 грн |
| 41+ | 7.39 грн |
| 100+ | 5.90 грн |
| 250+ | 5.41 грн |
| 500+ | 5.11 грн |
| 1000+ | 4.79 грн |
| SN74LVC1G00DBVR |
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Виробник: UMW
Description: IC GATE NAND 1CH 2-INP SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.7V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Description: IC GATE NAND 1CH 2-INP SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.7V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
товару немає в наявності
В кошику
од. на суму грн.
| SN74LVC1G00DBVR |
![]() |
Виробник: UMW
Description: IC GATE NAND 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.7V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Description: IC GATE NAND 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.7V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
на замовлення 11 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SN74LVC1G00DBVR |
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Виробник: UMW
2-Input NAND Gate; 1,65V~5,5V; -40°C ~ 125°C; Equivalent: SN74LVC1G00DBVR; SN74LVC1G00DBVRE4; SN74LVC1G00DBVRG4; SN74LVC1G00DBVT; SN74LVC1G00DBVTE4; SN74LVC1G00DBVTG4; 74LVC1G00GV,125; 74LVC1G00W5-7; SN74LVC1G00DBVR UMW UT000lvc1g dbv UMW
кількість в упаковці: 100 шт
2-Input NAND Gate; 1,65V~5,5V; -40°C ~ 125°C; Equivalent: SN74LVC1G00DBVR; SN74LVC1G00DBVRE4; SN74LVC1G00DBVRG4; SN74LVC1G00DBVT; SN74LVC1G00DBVTE4; SN74LVC1G00DBVTG4; 74LVC1G00GV,125; 74LVC1G00W5-7; SN74LVC1G00DBVR UMW UT000lvc1g dbv UMW
кількість в упаковці: 100 шт
на замовлення 470 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 3.12 грн |
| SN74LVC1G02DBVR |
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Виробник: UMW
Description: IC GATE NOR 1CH 2-INP SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Max Propagation Delay @ V, Max CL: 6.1ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Description: IC GATE NOR 1CH 2-INP SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Max Propagation Delay @ V, Max CL: 6.1ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
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В кошику
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| SN74LVC1G02DBVR |
![]() |
Виробник: UMW
Description: IC GATE NOR 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Max Propagation Delay @ V, Max CL: 6.1ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Description: IC GATE NOR 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Max Propagation Delay @ V, Max CL: 6.1ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
на замовлення 2059 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.58 грн |
| 37+ | 8.40 грн |
| 41+ | 7.39 грн |
| 100+ | 5.90 грн |
| 250+ | 5.41 грн |
| 500+ | 5.11 грн |
| 1000+ | 4.79 грн |
| SN74LVC1G04DBVR |
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Виробник: UMW
Description: IC INVERTER 1CH 1-INP SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.07V ~ 3.85V
Input Logic Level - Low: 0.58V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Description: IC INVERTER 1CH 1-INP SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.07V ~ 3.85V
Input Logic Level - Low: 0.58V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
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В кошику
од. на суму грн.
| SN74LVC1G04DBVR |
![]() |
Виробник: UMW
Description: IC INVERTER 1CH 1-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.07V ~ 3.85V
Input Logic Level - Low: 0.58V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Description: IC INVERTER 1CH 1-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 1
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.07V ~ 3.85V
Input Logic Level - Low: 0.58V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
на замовлення 1435 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.08 грн |
| 115+ | 2.65 грн |
| 130+ | 2.33 грн |
| 157+ | 1.82 грн |
| 250+ | 1.64 грн |
| 500+ | 1.53 грн |
| 1000+ | 1.42 грн |
| SN74LVC1G04DBVR .C04F |
Виробник: UMW
Single Inverter; Buffered Output; 1,65V~5,5V; -40°C ~ 125°C; Equivalent: SN74LVC1G04DBVR; SN74LVC1G04DBVRE4; SN74LVC1G04DBVRG4; SN74LVC1G04DBVT; SN74LVC1G04DBVTE4; SN74LVC1G04DBVTG4; 74LVC1G04GV,125; 74LVC1G04W5-7; SN74LVC1G04DBVR UMW UT004lvc1g dbv UMW
кількість в упаковці: 10 шт
Single Inverter; Buffered Output; 1,65V~5,5V; -40°C ~ 125°C; Equivalent: SN74LVC1G04DBVR; SN74LVC1G04DBVRE4; SN74LVC1G04DBVRG4; SN74LVC1G04DBVT; SN74LVC1G04DBVTE4; SN74LVC1G04DBVTG4; 74LVC1G04GV,125; 74LVC1G04W5-7; SN74LVC1G04DBVR UMW UT004lvc1g dbv UMW
кількість в упаковці: 10 шт
на замовлення 280 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 210+ | 2.91 грн |
| SN74LVC1G04DCKR |
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Виробник: UMW
Single Inverter; Buffered Output; 1,65V~5,5V; -40°C ~ 125°C; Equivalent: SN74LVC1G04DCKR; SN74LVC1G04DCKRE4; SN74LVC1G04DCKRG4; SN74LVC1G04DCKT; SN74LVC1G04DCKTE4; SN74LVC1G04DCKTG4; 74LVC1G04GW,125; 74LVC1G04GW,165; 74LVC1G04SE-7; SN74LVC1G04DCKR UMW UT
кількість в упаковці: 100 шт
Single Inverter; Buffered Output; 1,65V~5,5V; -40°C ~ 125°C; Equivalent: SN74LVC1G04DCKR; SN74LVC1G04DCKRE4; SN74LVC1G04DCKRG4; SN74LVC1G04DCKT; SN74LVC1G04DCKTE4; SN74LVC1G04DCKTG4; 74LVC1G04GW,125; 74LVC1G04GW,165; 74LVC1G04SE-7; SN74LVC1G04DCKR UMW UT
кількість в упаковці: 100 шт
на замовлення 975 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 2.97 грн |
| SN74LVC1G07DBVR |
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Виробник: UMW
Buffer; w/ Open Drain Output; 1,65V~5,5V; -40°C ~ 85°C; Equivalent: SN74LVC1G07DBVR; SN74LVC1G07DBVRE4; SN74LVC1G07DBVRG4; SN74LVC1G07DBVT; SN74LVC1G07DBVTE4; SN74LVC1G07DBVTG4; 74LVC1G07GV,125; 74LVC1G07W5-7 SN74LVC1G07DBVR UMW UT007lvc1g dbv UMW
кількість в упаковці: 250 шт
Buffer; w/ Open Drain Output; 1,65V~5,5V; -40°C ~ 85°C; Equivalent: SN74LVC1G07DBVR; SN74LVC1G07DBVRE4; SN74LVC1G07DBVRG4; SN74LVC1G07DBVT; SN74LVC1G07DBVTE4; SN74LVC1G07DBVTG4; 74LVC1G07GV,125; 74LVC1G07W5-7 SN74LVC1G07DBVR UMW UT007lvc1g dbv UMW
кількість в упаковці: 250 шт
на замовлення 500 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 250+ | 2.80 грн |
| SN74LVC1G08DBVR |
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Виробник: UMW
Description: IC GATE AND 1CH 2-INP SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.7V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Description: IC GATE AND 1CH 2-INP SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.7V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
товару немає в наявності
В кошику
од. на суму грн.
| SN74LVC1G08DBVR |
![]() |
Виробник: UMW
Description: IC GATE AND 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.7V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Description: IC GATE AND 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.7V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
на замовлення 2672 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.08 грн |
| 112+ | 2.73 грн |
| 130+ | 2.33 грн |
| 155+ | 1.84 грн |
| 250+ | 1.66 грн |
| 500+ | 1.55 грн |
| 1000+ | 1.44 грн |
| SN74LVC1G08DBVR |
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Виробник: UMW
2-Input AND Gate; 1,65V~5,5V; -40°C ~ 125°C; Equivalent: SN74LVC1G08DBVR; SN74LVC1G08DBVRE4; SN74LVC1G08DBVRG4; SN74LVC1G08DBVT; SN74LVC1G08DBVTE4; SN74LVC1G08DBVTG4; 74LVC1G08GV,125; 74LVC1G08W5-7; SN74LVC1G08DBVR UMW UT008lvc1g dbv UMW
кількість в упаковці: 100 шт
2-Input AND Gate; 1,65V~5,5V; -40°C ~ 125°C; Equivalent: SN74LVC1G08DBVR; SN74LVC1G08DBVRE4; SN74LVC1G08DBVRG4; SN74LVC1G08DBVT; SN74LVC1G08DBVTE4; SN74LVC1G08DBVTG4; 74LVC1G08GV,125; 74LVC1G08W5-7; SN74LVC1G08DBVR UMW UT008lvc1g dbv UMW
кількість в упаковці: 100 шт
на замовлення 500 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 3.06 грн |
| SN74LVC1G08DCKR |
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Виробник: UMW
2-Input AND Gate; 1,65V~5,5V; -40°C ~ 125°C; Equivalent: SN74LVC1G08DCKR; SN74LVC1G08DCKRE4; SN74LVC1G08DCKRG4; SN74LVC1G08DCKT; SN74LVC1G08DCKTE4; SN74LVC1G08DCKTG4; 74LVC1G08GW,125; 74LVC1G08GW,165; 74LVC1G08SE-7; SN74LVC1G08DCKR UMW UT008lvc1g dck UMW
кількість в упаковці: 100 шт
2-Input AND Gate; 1,65V~5,5V; -40°C ~ 125°C; Equivalent: SN74LVC1G08DCKR; SN74LVC1G08DCKRE4; SN74LVC1G08DCKRG4; SN74LVC1G08DCKT; SN74LVC1G08DCKTE4; SN74LVC1G08DCKTG4; 74LVC1G08GW,125; 74LVC1G08GW,165; 74LVC1G08SE-7; SN74LVC1G08DCKR UMW UT008lvc1g dck UMW
кількість в упаковці: 100 шт
на замовлення 895 шт:
термін постачання 28-31 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 2.78 грн |
| SN74LVC1G08DRYR |
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Виробник: UMW
Description: IC GATE AND 1CH 2-INP DFN-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-DFN (1x1.5)
Input Logic Level - High: 1.7V
Input Logic Level - Low: 0.7V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Description: IC GATE AND 1CH 2-INP DFN-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-DFN (1x1.5)
Input Logic Level - High: 1.7V
Input Logic Level - Low: 0.7V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
товару немає в наявності
В кошику
од. на суму грн.
| SN74LVC1G08DRYR |
![]() |
Виробник: UMW
Description: IC GATE AND 1CH 2-INP DFN-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-DFN (1x1.5)
Input Logic Level - High: 1.7V
Input Logic Level - Low: 0.7V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Description: IC GATE AND 1CH 2-INP DFN-6
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-DFN (1x1.5)
Input Logic Level - High: 1.7V
Input Logic Level - Low: 0.7V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 15pF
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
на замовлення 4461 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 14.94 грн |
| 31+ | 9.84 грн |
| 35+ | 8.69 грн |
| 100+ | 6.98 грн |
| 250+ | 6.41 грн |
| 500+ | 6.07 грн |
| 1000+ | 5.69 грн |
| 2500+ | 5.52 грн |

















