Продукція > VISHAY SILICONIX > Всі товари виробника VISHAY SILICONIX (11066) > Сторінка 10 з 185
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IRL2203STRR | Vishay Siliconix |
 Description: MOSFET N-CH 30V 100A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 3.8W (Ta), 130W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRL3102L | Vishay Siliconix |
Description: MOSFET N-CH 20V 61A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-262-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL3103D1STRR | Vishay Siliconix |
Description: MOSFET N-CH 30V 64A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Discontinued at Digi-Key Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL3202L | Vishay Siliconix |
Description: MOSFET N-CH 20V 48A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 7V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-262-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL3302L | Vishay Siliconix |
Description: MOSFET N-CH 20V 39A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-262-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRL3303D1STRR | Vishay Siliconix |
Description: MOSFET N-CH 30V 38A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D²PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL3402L | Vishay Siliconix |
Description: MOSFET N-CH 20V 85A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 51A, 7V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-262-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL3502L | Vishay Siliconix |
Description: MOSFET N-CH 20V 110A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-262-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL510L | Vishay Siliconix |
Description: MOSFET N-CH 100V 5.6A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL510STRL | Vishay Siliconix |
Description: MOSFET N-CH 100V 5.6A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL510STRR | Vishay Siliconix |
Description: MOSFET N-CH 100V 5.6A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL520L | Vishay Siliconix |
Description: MOSFET N-CH 100V 9.2A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL520S | Vishay Siliconix |
Description: MOSFET N-CH 100V 9.2A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRL520STRL | Vishay Siliconix |
Description: MOSFET N-CH 100V 9.2A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL520STRR | Vishay Siliconix |
Description: MOSFET N-CH 100V 9.2A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL530L | Vishay Siliconix |
Description: MOSFET N-CH 100V 15A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL530S | Vishay Siliconix |
Description: MOSFET N-CH 100V 15A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL530STRL | Vishay Siliconix |
Description: MOSFET N-CH 100V 15A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL540L | Vishay Siliconix |
Description: MOSFET N-CH 100V 28A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V Supplier Device Package: TO-262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL540STRL | Vishay Siliconix |
Description: MOSFET N-CH 100V 28A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL540STRR | Vishay Siliconix |
Description: MOSFET N-CH 100V 28A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL620STRL | Vishay Siliconix |
Description: MOSFET N-CH 200V 5.2A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL620STRR | Vishay Siliconix |
Description: MOSFET N-CH 200V 5.2A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL640L | Vishay Siliconix |
Description: MOSFET N-CH 200V 17A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL640STRL | Vishay Siliconix |
Description: MOSFET N-CH 200V 17A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRL640STRR | Vishay Siliconix |
Description: MOSFET N-CH 200V 17A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRLI540G | Vishay Siliconix |
Description: MOSFET N-CH 100V 17A TO220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 5V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRLR014TRL | Vishay Siliconix |
Description: MOSFET N-CH 60V 7.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRLR014TRR | Vishay Siliconix |
Description: MOSFET N-CH 60V 7.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D-Pak Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLR024TRL | Vishay Siliconix |
Description: MOSFET N-CH 60V 14A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLR024TRR | Vishay Siliconix |
Description: MOSFET N-CH 60V 14A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRLR110TRR | Vishay Siliconix |
Description: MOSFET N-CH 100V 4.3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLR120TRL | Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLR120TRR | Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLR8103TRL | Vishay Siliconix |
Description: MOSFET N-CH 30V 89A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: D-Pak Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLR8103TRR | Vishay Siliconix |
Description: MOSFET N-CH 30V 89A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: D-Pak Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRLU024 | Vishay Siliconix |
Description: MOSFET N-CH 60V 14A TO251AA Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLU110 | Vishay Siliconix |
Description: MOSFET N-CH 100V 4.3A TO251AA Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-251AA Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLZ14STRL | Vishay Siliconix |
Description: MOSFET N-CH 60V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLZ14STRR | Vishay Siliconix |
Description: MOSFET N-CH 60V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLZ24L | Vishay Siliconix |
Description: MOSFET N-CH 60V 17A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLZ24S | Vishay Siliconix |
Description: MOSFET N-CH 60V 17A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLZ24STRL | Vishay Siliconix |
Description: MOSFET N-CH 60V 17A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLZ24STRR | Vishay Siliconix |
Description: MOSFET N-CH 60V 17A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLZ34L | Vishay Siliconix |
Description: MOSFET N-CH 60V 30A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLZ34S | Vishay Siliconix |
Description: MOSFET N-CH 60V 30A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLZ34STRL | Vishay Siliconix |
Description: MOSFET N-CH 60V 30A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLZ34STRR | Vishay Siliconix |
Description: MOSFET N-CH 60V 30A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLZ44L | Vishay Siliconix |
Description: MOSFET N-CH 60V 50A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRLZ44STRL | Vishay Siliconix |
Description: MOSFET N-CH 60V 50A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRFB17N50L | Vishay Siliconix |
Description: MOSFET N-CH 500V 16A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRFP31N50L | Vishay Siliconix |
Description: MOSFET N-CH 500V 31A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 19A, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRFPS43N50K | Vishay Siliconix |
Description: MOSFET N-CH 500V 47A SUPER247 Packaging: Tube Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 28A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SUPER-247™ (TO-274AA) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8310 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRFPS40N50L | Vishay Siliconix |
Description: MOSFET N-CH 500V 46A SUPER247 Packaging: Tube Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SUPER-247™ (TO-274AA) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRFP32N50K | Vishay Siliconix |
Description: MOSFET N-CH 500V 32A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 32A, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRFP23N50L | Vishay Siliconix |
Description: MOSFET N-CH 500V 23A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 14A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRFP17N50L | Vishay Siliconix |
Description: MOSFET N-CH 500V 16A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRF644NS | Vishay Siliconix |
Description: MOSFET N-CH 250V 14A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 8.4A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRFZ44R | Vishay Siliconix |
Description: MOSFET N-CH 60V 50A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRF644N | Vishay Siliconix |
Description: MOSFET N-CH 250V 14A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 8.4A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| IRL2203STRR |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL3102L |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 61A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: TO-262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
Description: MOSFET N-CH 20V 61A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: TO-262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL3103D1STRR |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 64A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Discontinued at Digi-Key
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Description: MOSFET N-CH 30V 64A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Discontinued at Digi-Key
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL3202L |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 48A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 7V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: TO-262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
Description: MOSFET N-CH 20V 48A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 7V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: TO-262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL3302L |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 39A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: TO-262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Description: MOSFET N-CH 20V 39A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: TO-262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL3303D1STRR |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Description: MOSFET N-CH 30V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL3402L |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 85A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 51A, 7V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: TO-262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V
Description: MOSFET N-CH 20V 85A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 51A, 7V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: TO-262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL3502L |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 110A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: TO-262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Description: MOSFET N-CH 20V 110A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: TO-262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL510L |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Description: MOSFET N-CH 100V 5.6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL510STRL |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Description: MOSFET N-CH 100V 5.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL510STRR |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Description: MOSFET N-CH 100V 5.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL520L |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Description: MOSFET N-CH 100V 9.2A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL520S |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Description: MOSFET N-CH 100V 9.2A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL520STRL |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Description: MOSFET N-CH 100V 9.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL520STRR |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Description: MOSFET N-CH 100V 9.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL530L |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Description: MOSFET N-CH 100V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL530S |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Description: MOSFET N-CH 100V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL530STRL |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Description: MOSFET N-CH 100V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL540L |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 28A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 100V 28A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL540STRL |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL540STRR |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL620STRL |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Description: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL620STRR |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Description: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL640L |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 17A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 200V 17A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL640STRL |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 200V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL640STRR |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 200V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLI540G |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 5V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 100V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 10A, 5V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLR014TRL |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET N-CH 60V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLR014TRR |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET N-CH 60V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLR024TRL |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Description: MOSFET N-CH 60V 14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLR024TRR |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Description: MOSFET N-CH 60V 14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLR110TRR |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Description: MOSFET N-CH 100V 4.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLR120TRL |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLR120TRR |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLR8103TRL |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 89A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: D-Pak
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Description: MOSFET N-CH 30V 89A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: D-Pak
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLR8103TRR |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 89A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: D-Pak
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Description: MOSFET N-CH 30V 89A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: D-Pak
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLU024 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 14A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 60V 14A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
В кошику
од. на суму грн.
| IRLU110 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 100V 4.3A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
В кошику
од. на суму грн.
| IRLZ14STRL |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET N-CH 60V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLZ14STRR |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: MOSFET N-CH 60V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLZ24L |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 17A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Description: MOSFET N-CH 60V 17A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLZ24S |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 17A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Description: MOSFET N-CH 60V 17A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLZ24STRL |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Description: MOSFET N-CH 60V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLZ24STRR |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Description: MOSFET N-CH 60V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLZ34L |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 30A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 60V 30A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLZ34S |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 30A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 60V 30A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLZ34STRL |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 60V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLZ34STRR |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 60V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLZ44L |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Description: MOSFET N-CH 60V 50A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRLZ44STRL |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFB17N50L |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V
Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFP31N50L |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 19A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 500V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 19A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
В кошику
од. на суму грн.
| IRFPS43N50K |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 47A SUPER247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 28A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8310 pF @ 25 V
Description: MOSFET N-CH 500V 47A SUPER247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 28A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8310 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFPS40N50L |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 46A SUPER247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 25 V
Description: MOSFET N-CH 500V 46A SUPER247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFP32N50K |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 32A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 32A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 500V 32A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 32A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
В кошику
од. на суму грн.
| IRFP23N50L |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 14A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Description: MOSFET N-CH 500V 23A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 14A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFP17N50L |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V
Description: MOSFET N-CH 500V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRF644NS |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 250V 14A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8.4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Description: MOSFET N-CH 250V 14A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8.4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFZ44R |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
В кошику
од. на суму грн.
| IRF644N |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 250V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8.4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Description: MOSFET N-CH 250V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 8.4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.