| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI4848DY-T1-GE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 3.7A; Idm: 25A; 3W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 3.7A Pulsed drain current: 25A Power dissipation: 3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI4850BDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 11.3A; Idm: 40A Polarisation: unipolar Drain current: 11.3A Drain-source voltage: 60V Power dissipation: 4.5W Case: SO8 Kind of package: reel; tape Gate charge: 17nC Technology: TrenchFET® Kind of channel: enhancement Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 40A On-state resistance: 25mΩ Type of transistor: N-MOSFET кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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SI4850EY-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; 3.3W; SO8 Type of transistor: N-MOSFET Power dissipation: 3.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 7.1A On-state resistance: 47mΩ кількість в упаковці: 1 шт |
на замовлення 1194 шт: термін постачання 14-21 дні (днів) |
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SI4850EY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 8.5A; Idm: 40A Type of transistor: N-MOSFET Power dissipation: 3.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 8.5A On-state resistance: 47mΩ кількість в упаковці: 1 шт |
на замовлення 1164 шт: термін постачання 14-21 дні (днів) |
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SI4850EY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 40A; 1.2W; SO8 Polarisation: unipolar Drain current: 6A Drain-source voltage: 60V Power dissipation: 1.2W Case: SO8 Kind of package: reel; tape Gate charge: 27nC Kind of channel: enhancement Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 40A On-state resistance: 22mΩ Type of transistor: N-MOSFET кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| SI4862DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 25A; Idm: 60A; 3.5W Drain-source voltage: 16V Drain current: 25A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 3.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 70nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 60A Mounting: SMD Case: SO8 кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| Si4864DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 25A; Idm: 60A; 3.5W Polarisation: unipolar Drain current: 25A Drain-source voltage: 20V Power dissipation: 3.5W Case: SO8 Kind of package: reel; tape Gate charge: 70nC Technology: TrenchFET® Kind of channel: enhancement Mounting: SMD Gate-source voltage: ±8V Pulsed drain current: 60A On-state resistance: 4.7mΩ Type of transistor: N-MOSFET кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| Si4874BDY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Pulsed drain current: 50A Power dissipation: 3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI4890DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 11A; Idm: 50A; 2.5W Polarisation: unipolar Drain current: 11A Drain-source voltage: 30V Power dissipation: 2.5W Case: SO8 Kind of package: reel; tape Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhancement Mounting: SMD Gate-source voltage: ±25V Pulsed drain current: 50A On-state resistance: 20mΩ Type of transistor: N-MOSFET кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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SI4894BDY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.5A; 2.5W; SO8 Polarisation: unipolar Drain current: 9.5A Drain-source voltage: 30V Power dissipation: 2.5W Case: SO8 Kind of package: reel; tape Gate charge: 38nC Kind of channel: enhancement Mounting: SMD Gate-source voltage: ±20V On-state resistance: 16mΩ Type of transistor: N-MOSFET кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| SI4894BDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 40A; 2.5W Polarisation: unipolar Drain current: 12A Drain-source voltage: 30V Power dissipation: 2.5W Case: SO8 Kind of package: reel; tape Gate charge: 38nC Technology: TrenchFET® Kind of channel: enhancement Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 40A On-state resistance: 16mΩ Type of transistor: N-MOSFET кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI4896DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 9.5A; Idm: 50A Polarisation: unipolar Drain current: 9.5A Drain-source voltage: 80V Power dissipation: 3.1W Case: SO8 Kind of package: reel; tape Gate charge: 41nC Technology: TrenchFET® Kind of channel: enhancement Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 50A On-state resistance: 22mΩ Type of transistor: N-MOSFET кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI4896DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 9.5A; Idm: 50A Polarisation: unipolar Drain current: 9.5A Drain-source voltage: 80V Power dissipation: 3.1W Case: SO8 Kind of package: reel; tape Gate charge: 41nC Technology: TrenchFET® Kind of channel: enhancement Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 50A On-state resistance: 22mΩ Type of transistor: N-MOSFET кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI4900DY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 20A Case: SO8 Drain-source voltage: 60V Drain current: 5.3A On-state resistance: 72mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI4900DY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 20A Case: SO8 Drain-source voltage: 60V Drain current: 5.3A On-state resistance: 72mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| Si4904DY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 20A Case: SO8 Drain-source voltage: 40V Drain current: 8A On-state resistance: 19mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 85nC кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI4904DY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±16V Pulsed drain current: 20A Case: SO8 Drain-source voltage: 40V Drain current: 8A On-state resistance: 19mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 85nC кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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SI4909DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -6.4A; Idm: -30A; 2.1W; SO8 Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -30A Case: SO8 Drain-source voltage: -40V Drain current: -6.4A On-state resistance: 27mΩ Type of transistor: P-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 63nC кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| Si4922BDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 35A Case: SO8 Drain-source voltage: 30V Drain current: 8A On-state resistance: 24mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 62nC кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI4922BDY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 35A Case: SO8 Drain-source voltage: 30V Drain current: 8A On-state resistance: 24mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 62nC кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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SI4925BDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.7A; 2W; SO8 Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V Case: SO8 Drain-source voltage: -30V Drain current: -5.7A On-state resistance: 41mΩ Type of transistor: P-MOSFET x2 Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 50nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SI4925DDY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.9A; 5W; SO8 Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V Case: SO8 Drain-source voltage: -30V Drain current: -5.9A On-state resistance: 41mΩ Type of transistor: P-MOSFET x2 Power dissipation: 5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 50nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| SI4931DY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8 Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -30A Case: SO8 Drain-source voltage: -12V Drain current: -8.9A On-state resistance: 28mΩ Type of transistor: P-MOSFET x2 Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 52nC кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI4931DY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8 Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -30A Case: SO8 Drain-source voltage: -12V Drain current: -8.9A On-state resistance: 28mΩ Type of transistor: P-MOSFET x2 Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 52nC кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI4932DY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 30A Case: SO8 Drain-source voltage: 30V Drain current: 8A On-state resistance: 17mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 48nC кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI4936BDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.9A; Idm: 30A Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 30A Case: SO8 Drain-source voltage: 30V Drain current: 6.9A On-state resistance: 51mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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SI4936CDY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 20A Case: SO8 Drain-source voltage: 30V Drain current: 4.6A On-state resistance: 50mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| SI4943BDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8 Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -30A Case: SO8 Drain-source voltage: -20V Drain current: -8.4A On-state resistance: 31mΩ Type of transistor: P-MOSFET x2 Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25nC кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI4943CDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -30A Case: SO8 Drain-source voltage: -20V Drain current: -8A On-state resistance: 33mΩ Type of transistor: P-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 62nC кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI4943CDY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -30A Case: SO8 Drain-source voltage: -20V Drain current: -8A On-state resistance: 33mΩ Type of transistor: P-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 62nC кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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SI4946BEY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.4A; 3.7W; SO8 Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 60V Drain current: 4.4A On-state resistance: 52mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SI4946BEY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.4A; 3.7W; SO8 Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 60V Drain current: 4.4A On-state resistance: 52mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| SI4946CDY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 25A Case: SO8 Drain-source voltage: 60V Drain current: 6.1A On-state resistance: 51.6mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10nC кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI4948BEY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.1A; 2.4W Drain-source voltage: -60V Drain current: -3.1A On-state resistance: 0.15Ω Type of transistor: P-MOSFET x2 Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -25A Mounting: SMD Case: SO8 кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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SI4948BEY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.4A; Idm: -25A; 0.95W; SO8 Drain-source voltage: -60V Drain current: -2.4A On-state resistance: 0.12Ω Type of transistor: P-MOSFET Power dissipation: 0.95W Polarisation: unipolar Kind of package: reel; tape Gate charge: 22nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -25A Mounting: SMD Case: SO8 кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| SI4963BDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8 Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -40A Case: SO8 Drain-source voltage: -20V Drain current: -6.5A On-state resistance: 50mΩ Type of transistor: P-MOSFET x2 Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI4963BDY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8 Mounting: SMD Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -40A Case: SO8 Drain-source voltage: -20V Drain current: -6.5A On-state resistance: 50mΩ Type of transistor: P-MOSFET x2 Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5403DC-T1-GE3 | VISHAY |
SI5403DC-T1-GE3 SMD P channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5418DU-T1-GE3 | VISHAY |
SI5418DU-T1-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5419DU-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -40A Mounting: SMD On-state resistance: 33mΩ Type of transistor: P-MOSFET Power dissipation: 31W Polarisation: unipolar Kind of package: reel; tape Gate charge: 45nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -40A Drain-source voltage: -30V Drain current: -12A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5424DC-T1-GE3 | VISHAY |
SI5424DC-T1-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5429DU-T1-GE3 | VISHAY |
SI5429DU-T1-GE3 SMD P channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5441BDC-T1-E3 | VISHAY |
SI5441BDC-T1-E3 SMD P channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5441BDC-T1-GE3 | VISHAY |
SI5441BDC-T1-GE3 SMD P channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5442DU-T1-GE3 | VISHAY |
SI5442DU-T1-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| Si5448DU-T1-GE3 | VISHAY |
SI5448DU-T1-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5457DC-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A Mounting: SMD Drain-source voltage: -20V Drain current: -6A On-state resistance: 56mΩ Type of transistor: P-MOSFET Power dissipation: 5.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 38nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -20A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5458DU-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6A; Idm: 20A; 10.4W Drain-source voltage: 30V Drain current: 6A On-state resistance: 51mΩ Type of transistor: N-MOSFET Power dissipation: 10.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 20A Mounting: SMD кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5459DU-T1-GE3 | VISHAY |
SI5459DU-T1-GE3 SMD P channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5468DC-T1-GE3 | VISHAY |
SI5468DC-T1-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5471DC-T1-GE3 | VISHAY |
SI5471DC-T1-GE3 SMD P channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5476DU-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 25A; 31W Mounting: SMD Pulsed drain current: 25A Drain-source voltage: 60V Drain current: 12A On-state resistance: 41mΩ Type of transistor: N-MOSFET Power dissipation: 31W Polarisation: unipolar Kind of package: reel; tape Gate charge: 32nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5504BDC-T1-E3 | VISHAY |
SI5504BDC-T1-E3 Multi channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5504BDC-T1-GE3 | VISHAY |
SI5504BDC-T1-GE3 Multi channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5513CDC-T1-E3 | VISHAY |
SI5513CDC-T1-E3 Multi channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5513CDC-T1-GE3 | VISHAY |
SI5513CDC-T1-GE3 Multi channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5515CDC-T1-E3 | VISHAY |
SI5515CDC-T1-E3 Multi channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5515CDC-T1-GE3 | VISHAY |
SI5515CDC-T1-GE3 Multi channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5517DU-T1-GE3 | VISHAY |
SI5517DU-T1-GE3 Multi channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SI5902BDC-T1-E3 | VISHAY |
SI5902BDC-T1-E3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. |
| SI4848DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 3.7A; Idm: 25A; 3W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.7A
Pulsed drain current: 25A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 3.7A; Idm: 25A; 3W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.7A
Pulsed drain current: 25A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI4850BDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 11.3A; Idm: 40A
Polarisation: unipolar
Drain current: 11.3A
Drain-source voltage: 60V
Power dissipation: 4.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 11.3A; Idm: 40A
Polarisation: unipolar
Drain current: 11.3A
Drain-source voltage: 60V
Power dissipation: 4.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI4850EY-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; 3.3W; SO8
Type of transistor: N-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 7.1A
On-state resistance: 47mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.1A; 3.3W; SO8
Type of transistor: N-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 7.1A
On-state resistance: 47mΩ
кількість в упаковці: 1 шт
на замовлення 1194 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 59.97 грн |
| 25+ | 43.68 грн |
| 68+ | 41.29 грн |
| SI4850EY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 8.5A; Idm: 40A
Type of transistor: N-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 8.5A
On-state resistance: 47mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 8.5A; Idm: 40A
Type of transistor: N-MOSFET
Power dissipation: 3.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 8.5A
On-state resistance: 47mΩ
кількість в упаковці: 1 шт
на замовлення 1164 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 163.41 грн |
| 10+ | 120.61 грн |
| 26+ | 42.12 грн |
| 71+ | 39.82 грн |
| SI4850EY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 40A; 1.2W; SO8
Polarisation: unipolar
Drain current: 6A
Drain-source voltage: 60V
Power dissipation: 1.2W
Case: SO8
Kind of package: reel; tape
Gate charge: 27nC
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 40A; 1.2W; SO8
Polarisation: unipolar
Drain current: 6A
Drain-source voltage: 60V
Power dissipation: 1.2W
Case: SO8
Kind of package: reel; tape
Gate charge: 27nC
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI4862DY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 25A; Idm: 60A; 3.5W
Drain-source voltage: 16V
Drain current: 25A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 25A; Idm: 60A; 3.5W
Drain-source voltage: 16V
Drain current: 25A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 60A
Mounting: SMD
Case: SO8
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| Si4864DY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 25A; Idm: 60A; 3.5W
Polarisation: unipolar
Drain current: 25A
Drain-source voltage: 20V
Power dissipation: 3.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±8V
Pulsed drain current: 60A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 25A; Idm: 60A; 3.5W
Polarisation: unipolar
Drain current: 25A
Drain-source voltage: 20V
Power dissipation: 3.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±8V
Pulsed drain current: 60A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| Si4874BDY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI4890DY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 11A; Idm: 50A; 2.5W
Polarisation: unipolar
Drain current: 11A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±25V
Pulsed drain current: 50A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 11A; Idm: 50A; 2.5W
Polarisation: unipolar
Drain current: 11A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±25V
Pulsed drain current: 50A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI4894BDY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.5A; 2.5W; SO8
Polarisation: unipolar
Drain current: 9.5A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.5A; 2.5W; SO8
Polarisation: unipolar
Drain current: 9.5A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI4894BDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 40A; 2.5W
Polarisation: unipolar
Drain current: 12A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 38nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 40A; 2.5W
Polarisation: unipolar
Drain current: 12A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 38nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI4896DY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 9.5A; Idm: 50A
Polarisation: unipolar
Drain current: 9.5A
Drain-source voltage: 80V
Power dissipation: 3.1W
Case: SO8
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 50A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 9.5A; Idm: 50A
Polarisation: unipolar
Drain current: 9.5A
Drain-source voltage: 80V
Power dissipation: 3.1W
Case: SO8
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 50A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI4896DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 9.5A; Idm: 50A
Polarisation: unipolar
Drain current: 9.5A
Drain-source voltage: 80V
Power dissipation: 3.1W
Case: SO8
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 50A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 9.5A; Idm: 50A
Polarisation: unipolar
Drain current: 9.5A
Drain-source voltage: 80V
Power dissipation: 3.1W
Case: SO8
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 50A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI4900DY-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 72mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 72mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI4900DY-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 72mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 72mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
кількість в упаковці: 2500 шт
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| Si4904DY-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 85nC
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 85nC
кількість в упаковці: 2500 шт
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В кошику
од. на суму грн.
| SI4904DY-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 85nC
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 85nC
кількість в упаковці: 2500 шт
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| SI4909DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.4A; Idm: -30A; 2.1W; SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -40V
Drain current: -6.4A
On-state resistance: 27mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 63nC
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6.4A; Idm: -30A; 2.1W; SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -40V
Drain current: -6.4A
On-state resistance: 27mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 63nC
кількість в упаковці: 2500 шт
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В кошику
од. на суму грн.
| Si4922BDY-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 35A
Case: SO8
Drain-source voltage: 30V
Drain current: 8A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 35A
Case: SO8
Drain-source voltage: 30V
Drain current: 8A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI4922BDY-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 35A
Case: SO8
Drain-source voltage: 30V
Drain current: 8A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 35A
Case: SO8
Drain-source voltage: 30V
Drain current: 8A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
кількість в упаковці: 2500 шт
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В кошику
од. на суму грн.
| SI4925BDY-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.7A; 2W; SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: -30V
Drain current: -5.7A
On-state resistance: 41mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 50nC
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.7A; 2W; SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: -30V
Drain current: -5.7A
On-state resistance: 41mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 50nC
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SI4925DDY-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.9A; 5W; SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: -30V
Drain current: -5.9A
On-state resistance: 41mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 50nC
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5.9A; 5W; SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: -30V
Drain current: -5.9A
On-state resistance: 41mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 50nC
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SI4931DY-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -12V
Drain current: -8.9A
On-state resistance: 28mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52nC
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -12V
Drain current: -8.9A
On-state resistance: 28mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52nC
кількість в упаковці: 2500 шт
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В кошику
од. на суму грн.
| SI4931DY-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -12V
Drain current: -8.9A
On-state resistance: 28mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52nC
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -12V
Drain current: -8.9A
On-state resistance: 28mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52nC
кількість в упаковці: 2500 шт
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В кошику
од. на суму грн.
| SI4932DY-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 30V
Drain current: 8A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48nC
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 30V
Drain current: 8A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48nC
кількість в упаковці: 2500 шт
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В кошику
од. на суму грн.
| SI4936BDY-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.9A; Idm: 30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 30V
Drain current: 6.9A
On-state resistance: 51mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.9A; Idm: 30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 30V
Drain current: 6.9A
On-state resistance: 51mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI4936CDY-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 30V
Drain current: 4.6A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 30V
Drain current: 4.6A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SI4943BDY-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -20V
Drain current: -8.4A
On-state resistance: 31mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -20V
Drain current: -8.4A
On-state resistance: 31mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
кількість в упаковці: 2500 шт
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В кошику
од. на суму грн.
| SI4943CDY-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
кількість в упаковці: 2500 шт
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В кошику
од. на суму грн.
| SI4943CDY-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
кількість в упаковці: 2500 шт
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В кошику
од. на суму грн.
| SI4946BEY-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.4A; 3.7W; SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 60V
Drain current: 4.4A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.4A; 3.7W; SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 60V
Drain current: 4.4A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
кількість в упаковці: 1 шт
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В кошику
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| SI4946BEY-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.4A; 3.7W; SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 60V
Drain current: 4.4A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.4A; 3.7W; SO8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 60V
Drain current: 4.4A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
кількість в упаковці: 1 шт
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од. на суму грн.
| SI4946CDY-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 25A
Case: SO8
Drain-source voltage: 60V
Drain current: 6.1A
On-state resistance: 51.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 25A
Case: SO8
Drain-source voltage: 60V
Drain current: 6.1A
On-state resistance: 51.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
кількість в упаковці: 2500 шт
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од. на суму грн.
| SI4948BEY-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.1A; 2.4W
Drain-source voltage: -60V
Drain current: -3.1A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -25A
Mounting: SMD
Case: SO8
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.1A; 2.4W
Drain-source voltage: -60V
Drain current: -3.1A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Power dissipation: 2.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -25A
Mounting: SMD
Case: SO8
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI4948BEY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.4A; Idm: -25A; 0.95W; SO8
Drain-source voltage: -60V
Drain current: -2.4A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 0.95W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -25A
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.4A; Idm: -25A; 0.95W; SO8
Drain-source voltage: -60V
Drain current: -2.4A
On-state resistance: 0.12Ω
Type of transistor: P-MOSFET
Power dissipation: 0.95W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -25A
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI4963BDY-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -40A
Case: SO8
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -40A
Case: SO8
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI4963BDY-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -40A
Case: SO8
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -40A
Case: SO8
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI5403DC-T1-GE3 |
|
Виробник: VISHAY
SI5403DC-T1-GE3 SMD P channel transistors
SI5403DC-T1-GE3 SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SI5418DU-T1-GE3 |
|
Виробник: VISHAY
SI5418DU-T1-GE3 SMD N channel transistors
SI5418DU-T1-GE3 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SI5419DU-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -40A
Mounting: SMD
On-state resistance: 33mΩ
Type of transistor: P-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 45nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -12A
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -40A
Mounting: SMD
On-state resistance: 33mΩ
Type of transistor: P-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 45nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -12A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI5424DC-T1-GE3 |
|
Виробник: VISHAY
SI5424DC-T1-GE3 SMD N channel transistors
SI5424DC-T1-GE3 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SI5429DU-T1-GE3 |
|
Виробник: VISHAY
SI5429DU-T1-GE3 SMD P channel transistors
SI5429DU-T1-GE3 SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SI5441BDC-T1-E3 |
|
Виробник: VISHAY
SI5441BDC-T1-E3 SMD P channel transistors
SI5441BDC-T1-E3 SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SI5441BDC-T1-GE3 |
|
Виробник: VISHAY
SI5441BDC-T1-GE3 SMD P channel transistors
SI5441BDC-T1-GE3 SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SI5442DU-T1-GE3 |
|
Виробник: VISHAY
SI5442DU-T1-GE3 SMD N channel transistors
SI5442DU-T1-GE3 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| Si5448DU-T1-GE3 |
|
Виробник: VISHAY
SI5448DU-T1-GE3 SMD N channel transistors
SI5448DU-T1-GE3 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SI5457DC-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Mounting: SMD
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 56mΩ
Type of transistor: P-MOSFET
Power dissipation: 5.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -20A
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Mounting: SMD
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 56mΩ
Type of transistor: P-MOSFET
Power dissipation: 5.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -20A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI5458DU-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6A; Idm: 20A; 10.4W
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 51mΩ
Type of transistor: N-MOSFET
Power dissipation: 10.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 20A
Mounting: SMD
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6A; Idm: 20A; 10.4W
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 51mΩ
Type of transistor: N-MOSFET
Power dissipation: 10.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 20A
Mounting: SMD
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI5459DU-T1-GE3 |
|
Виробник: VISHAY
SI5459DU-T1-GE3 SMD P channel transistors
SI5459DU-T1-GE3 SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SI5468DC-T1-GE3 |
|
Виробник: VISHAY
SI5468DC-T1-GE3 SMD N channel transistors
SI5468DC-T1-GE3 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SI5471DC-T1-GE3 |
|
Виробник: VISHAY
SI5471DC-T1-GE3 SMD P channel transistors
SI5471DC-T1-GE3 SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SI5476DU-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 25A; 31W
Mounting: SMD
Pulsed drain current: 25A
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 25A; 31W
Mounting: SMD
Pulsed drain current: 25A
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
| SI5504BDC-T1-E3 |
|
Виробник: VISHAY
SI5504BDC-T1-E3 Multi channel transistors
SI5504BDC-T1-E3 Multi channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SI5504BDC-T1-GE3 |
|
Виробник: VISHAY
SI5504BDC-T1-GE3 Multi channel transistors
SI5504BDC-T1-GE3 Multi channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SI5513CDC-T1-E3 |
|
Виробник: VISHAY
SI5513CDC-T1-E3 Multi channel transistors
SI5513CDC-T1-E3 Multi channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SI5513CDC-T1-GE3 |
|
Виробник: VISHAY
SI5513CDC-T1-GE3 Multi channel transistors
SI5513CDC-T1-GE3 Multi channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SI5515CDC-T1-E3 |
|
Виробник: VISHAY
SI5515CDC-T1-E3 Multi channel transistors
SI5515CDC-T1-E3 Multi channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SI5515CDC-T1-GE3 |
|
Виробник: VISHAY
SI5515CDC-T1-GE3 Multi channel transistors
SI5515CDC-T1-GE3 Multi channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SI5517DU-T1-GE3 |
|
Виробник: VISHAY
SI5517DU-T1-GE3 Multi channel transistors
SI5517DU-T1-GE3 Multi channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SI5902BDC-T1-E3 |
|
Виробник: VISHAY
SI5902BDC-T1-E3 SMD N channel transistors
SI5902BDC-T1-E3 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.