| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BZX85C6V2-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 6.2V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 6.2V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 14674 шт: термін постачання 14-30 дні (днів) |
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CRCW2512100RFKTHBC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 2512; 100Ω; 1W; ±1%; 500V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 100Ω Power: 1W Tolerance: ±1% Operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
на замовлення 7520 шт: термін постачання 14-30 дні (днів) |
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ZRC00JS4721C00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 4700uF; 16VDC; Pitch: 7.5mm; ±20% Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7mF Operating voltage: 16V DC Terminal pitch: 7.5mm Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Dimensions: 16x31.5mm |
на замовлення 113 шт: термін постачання 14-30 дні (днів) |
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593D107X9010C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; C; 2312; ±10%; 275mΩ Type of capacitor: tantalum Capacitance: 100µF Operating voltage: 10V DC Mounting: SMD Case: C Case - inch: 2312 Case - mm: 6032 Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount ESR value: 275mΩ Kind of capacitor: low ESR |
на замовлення 6157 шт: термін постачання 14-30 дні (днів) |
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| SIHJ240N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 89W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 30A Power dissipation: 89W Case: PowerPAK® SO8 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP240N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 31A; 78W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 31A Power dissipation: 78W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BFC233620334 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; X2; 330nF; 630VDC; 310VAC; THT; ±20% Type of capacitor: polypropylene Mounting: THT Kind of capacitor: X2 Capacitance: 0.33µF Terminal pitch: 22.5mm Body dimensions: 26x8.5x18mm Tolerance: ±20% Operating voltage: 310V AC; 630V DC |
на замовлення 493 шт: термін постачання 14-30 дні (днів) |
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VJ1206A101JXACW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; MLCC; 100pF; 50V; C0G (NP0); ±5%; SMD; 1206 Operating temperature: -55...125°C Dielectric: C0G (NP0) Type of capacitor: ceramic Kind of capacitor: MLCC Mounting: SMD Capacitance: 0.1nF Tolerance: ±5% Operating voltage: 50V Case - inch: 1206 Case - mm: 3216 |
на замовлення 77 шт: термін постачання 14-30 дні (днів) |
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| SS24HE3_A/I | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 13 inch reel Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 75A Kind of package: 13 inch reel Quantity in set/package: 3200pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SS24HM3_A/I | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 13 inch reel Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 75A Kind of package: 13 inch reel Quantity in set/package: 3200pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SS24S-E3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 13 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 40A Kind of package: 13 inch reel Quantity in set/package: 7500pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS24S-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 40A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. |
на замовлення 3784 шт: термін постачання 14-30 дні (днів) |
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SS24S-M3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 13 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 40A Kind of package: 13 inch reel Quantity in set/package: 7500pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS24S-M3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 40A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TZMC10GS08 | VISHAY |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 10V; SMD; 7 inch reel; MiniMELF,SOD80; 2500pcs. Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: 7 inch reel Case: MiniMELF; SOD80 Semiconductor structure: single diode Quantity in set/package: 2500pcs. |
на замовлення 31493 шт: термін постачання 14-30 дні (днів) |
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SS26S-M3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward voltage: 0.75V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 60V Quantity in set/package: 7500pcs. Case: SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS26S-M3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Kind of package: 7 inch reel Max. forward voltage: 0.7V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 60V Quantity in set/package: 1800pcs. Case: SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS26SHE3_B/H | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Kind of package: 7 inch reel Max. forward voltage: 0.75V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 60V Quantity in set/package: 1800pcs. Application: automotive industry Case: SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS26SHE3_B/I | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward voltage: 0.75V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 60V Quantity in set/package: 7500pcs. Application: automotive industry Case: SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MRS16000C8209FCT00 | VISHAY |
Category: THT ResistorsDescription: Resistor: thin film; THT; 82Ω; 400mW; ±1%; 200V; Ø0.5x29mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 82Ω Power: 0.4W Tolerance: ±1% Operating voltage: 200V Leads dimensions: Ø0.5x29mm Body dimensions: Ø1.6x3.6mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Length: 3.6mm Diameter: 1.6mm |
на замовлення 3820 шт: термін постачання 14-30 дні (днів) |
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MRS25000C8209FCT00 | VISHAY |
Category: THT ResistorsDescription: Resistor: thin film; THT; 82Ω; 600mW; ±1%; 350V; Ø0.6x28mm; 50ppm/°C Diameter: 2.5mm Mounting: THT Type of resistor: thin film Leads dimensions: Ø0.6x28mm Body dimensions: Ø2.5x6.5mm Length: 6.5mm Power: 0.6W Tolerance: ±1% Temperature coefficient: 50ppm/°C Resistance: 82Ω Operating voltage: 350V |
на замовлення 412 шт: термін постачання 14-30 дні (днів) |
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BFC233915474 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; X2; 470nF; 800VDC; 310VAC; THT; ±10% Type of capacitor: polypropylene Capacitance: 0.47µF Operating voltage: 310V AC; 800V DC Tolerance: ±10% Mounting: THT Terminal pitch: 22.5mm Kind of capacitor: X2 |
на замовлення 274 шт: термін постачання 14-30 дні (днів) |
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BFC233921474 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; X2; 470nF; 800VDC; 310VAC; THT; ±20% Type of capacitor: polypropylene Capacitance: 0.47µF Operating voltage: 310V AC; 800V DC Tolerance: ±20% Mounting: THT Terminal pitch: 22.5mm Kind of capacitor: X2 |
на замовлення 757 шт: термін постачання 14-30 дні (днів) |
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MCT06030C1002FP500 | VISHAY |
Category: SMD resistorsDescription: Resistor: thin film; SMD; 0603; 10kΩ; 0.125W; ±1%; MCT0603; 0; 75V Type of resistor: thin film Case - inch: 0603 Case - mm: 1608 Resistance: 10kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 75V Temperature coefficient: 50ppm/°C Roll diameter max.: 180mm Manufacturer series: MCT0603 Mounting: SMD Version: 0 Operating temperature: -55...125°C; -55...155°C |
на замовлення 16260 шт: термін постачання 14-30 дні (днів) |
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| SIHG050N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 32A Pulsed drain current: 155A Power dissipation: 278W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 50mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP050N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 32A Pulsed drain current: 155A Power dissipation: 278W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 50mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SS36HM3_A/H | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; 7 inch reel; 850pcs. Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 100A Kind of package: 7 inch reel Quantity in set/package: 850pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MAL213639101E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 100uF; 100VDC; Ø12.5x20mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 100µF Operating voltage: 100V DC Body dimensions: Ø12.5x20mm Tolerance: ±20% Operating temperature: -55...105°C Manufacturer series: MAL2136 Height: 20mm Diameter: 12.5mm Terminal pitch: 5mm Service life: 7000h |
на замовлення 389 шт: термін постачання 14-30 дні (днів) |
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| IRF530STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 56A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IRF740ALPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
на замовлення 968 шт: термін постачання 14-30 дні (днів) |
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IRF740ASTRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF740PBF-BE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 461 шт: термін постачання 14-30 дні (днів) |
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| IRF740STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRFZ44RPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRFZ44SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 67nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRFZ44STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IRFZ24PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 68A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
на замовлення 463 шт: термін постачання 14-30 дні (днів) |
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| IRFZ40PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRFZ48PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRFZ48RSPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRFZ48SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRFZ48STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BFC238330104 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT Mounting: THT Climate class: 55/110/56 Type of capacitor: polypropylene Capacitance: 0.1µF Leads: 2pin Terminal pitch: 22.5mm Body dimensions: 26x19.5x10mm Tolerance: ±5% Operating voltage: 350V AC; 1kV DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BFC238330153 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT Mounting: THT Lead length: 3.5mm Climate class: 55/110/56 Type of capacitor: polypropylene Capacitance: 15nF Leads: 2pin Terminal pitch: 15mm Body dimensions: 17.5x11x5mm Tolerance: ±5% Operating voltage: 350V AC; 1kV DC |
на замовлення 7 шт: термін постачання 14-30 дні (днів) |
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| IRL540SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
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| IRL540STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
|
TS53YJ103MR10 | VISHAY |
Category: Single turn SMD trimmersDescription: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%; 200V Type of potentiometer: mounting Kind of potentiometer: single turn Resistance: 10kΩ Power: 0.25W Mounting: SMD Tolerance: ±20% Temperature coefficient: 100ppm/°C Characteristics: linear Body dimensions: 5x5x2.7mm Track material: cermet Mechanical rotation angle: 270 ±10° Electrical rotation angle: 220 ±15° Torque: 1.5Ncm IP rating: IP67 Operating temperature: -55...155°C Operating voltage: 200V Leads: YJ |
на замовлення 241 шт: термін постачання 14-30 дні (днів) |
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1.5KE82CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 13 inch reel; 1.5kW Type of diode: TVS Max. off-state voltage: 70.1V Breakdown voltage: 82V Max. forward impulse current: 13.3A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 364 шт: термін постачання 14-30 дні (днів) |
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GRC00DD1021CTNL | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 16V DC Terminal pitch: 5mm Tolerance: ±20% Operating temperature: -40...105°C Dimensions: 10x16mm Service life: 2000h |
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В кошику од. на суму грн. | ||||||||||||||||||
| IRFP21N60LPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 330W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 84A Gate charge: 150nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRF540STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 110A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRF540STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 110A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
GSC00AF2211VARL | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 220µF Operating voltage: 35V DC Tolerance: ±20% Operating temperature: -55...105°C Dimensions: 8x10mm Manufacturer series: GSC Nominal life: 2000h Height: 10mm |
на замовлення 121 шт: термін постачання 14-30 дні (днів) |
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BZX55C3V0-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 19236 шт: термін постачання 14-30 дні (днів) |
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| IRF510STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
IRF830ALPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
на замовлення 934 шт: термін постачання 14-30 дні (днів) |
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| IRF830ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRF830ASTRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRF830BPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Case: TO220AB Kind of package: tube Polarisation: unipolar Gate charge: 20nC On-state resistance: 1.5Ω Drain current: 5.3A Pulsed drain current: 10A Gate-source voltage: ±30V Power dissipation: 104W Drain-source voltage: 500V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IRF840ASTRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| BZX85C6V2-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.2V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.2V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.2V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.2V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 14674 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.23 грн |
| 90+ | 4.70 грн |
| 97+ | 4.36 грн |
| 127+ | 3.32 грн |
| 500+ | 2.97 грн |
| CRCW2512100RFKTHBC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 100Ω; 1W; ±1%; 500V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 100Ω
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 100Ω; 1W; ±1%; 500V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 100Ω
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
на замовлення 7520 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 10.23 грн |
| 100+ | 5.62 грн |
| 1000+ | 3.49 грн |
| 4000+ | 2.90 грн |
| ZRC00JS4721C00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 16VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 16V DC
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x31.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 16VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 16V DC
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x31.5mm
на замовлення 113 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 96.71 грн |
| 9+ | 50.69 грн |
| 11+ | 41.46 грн |
| 50+ | 37.35 грн |
| 100+ | 35.67 грн |
| 593D107X9010C2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; C; 2312; ±10%; 275mΩ
Type of capacitor: tantalum
Capacitance: 100µF
Operating voltage: 10V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
ESR value: 275mΩ
Kind of capacitor: low ESR
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; low ESR; 100uF; 10VDC; SMD; C; 2312; ±10%; 275mΩ
Type of capacitor: tantalum
Capacitance: 100µF
Operating voltage: 10V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
ESR value: 275mΩ
Kind of capacitor: low ESR
на замовлення 6157 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 44.29 грн |
| 16+ | 26.35 грн |
| 50+ | 21.65 грн |
| 100+ | 20.23 грн |
| 250+ | 18.30 грн |
| 500+ | 17.20 грн |
| 1000+ | 16.28 грн |
| 1500+ | 15.78 грн |
| 2500+ | 15.19 грн |
| SIHJ240N60E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 89W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 89W
Case: PowerPAK® SO8
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHP240N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 31A; 78W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 31A
Power dissipation: 78W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 31A; 78W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 31A
Power dissipation: 78W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
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| BFC233620334 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 330nF; 630VDC; 310VAC; THT; ±20%
Type of capacitor: polypropylene
Mounting: THT
Kind of capacitor: X2
Capacitance: 0.33µF
Terminal pitch: 22.5mm
Body dimensions: 26x8.5x18mm
Tolerance: ±20%
Operating voltage: 310V AC; 630V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 330nF; 630VDC; 310VAC; THT; ±20%
Type of capacitor: polypropylene
Mounting: THT
Kind of capacitor: X2
Capacitance: 0.33µF
Terminal pitch: 22.5mm
Body dimensions: 26x8.5x18mm
Tolerance: ±20%
Operating voltage: 310V AC; 630V DC
на замовлення 493 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.81 грн |
| 12+ | 35.67 грн |
| 25+ | 33.91 грн |
| 50+ | 32.65 грн |
| 100+ | 31.56 грн |
| 300+ | 29.46 грн |
| VJ1206A101JXACW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100pF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Kind of capacitor: MLCC
Mounting: SMD
Capacitance: 0.1nF
Tolerance: ±5%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100pF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Kind of capacitor: MLCC
Mounting: SMD
Capacitance: 0.1nF
Tolerance: ±5%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
на замовлення 77 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.36 грн |
| 77+ | 5.04 грн |
| SS24HE3_A/I |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Application: automotive industry
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В кошику
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| SS24HM3_A/I |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Application: automotive industry
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| SS24S-E3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
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од. на суму грн.
| SS24S-E3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
на замовлення 3784 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.65 грн |
| SS24S-M3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
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| SS24S-M3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
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од. на суму грн.
| TZMC10GS08 |
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Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; 7 inch reel; MiniMELF,SOD80; 2500pcs.
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Quantity in set/package: 2500pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; 7 inch reel; MiniMELF,SOD80; 2500pcs.
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Quantity in set/package: 2500pcs.
на замовлення 31493 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.33 грн |
| 105+ | 4.03 грн |
| 141+ | 2.98 грн |
| 500+ | 2.37 грн |
| 1000+ | 2.14 грн |
| 2500+ | 1.89 грн |
| 5000+ | 1.70 грн |
| 7500+ | 1.60 грн |
| 12500+ | 1.49 грн |
| SS26S-M3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward voltage: 0.75V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 7500pcs.
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward voltage: 0.75V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 7500pcs.
Case: SMA
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| SS26S-M3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 1800pcs.
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 1800pcs.
Case: SMA
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| SS26SHE3_B/H |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.75V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 1800pcs.
Application: automotive industry
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.75V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 1800pcs.
Application: automotive industry
Case: SMA
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| SS26SHE3_B/I |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward voltage: 0.75V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 7500pcs.
Application: automotive industry
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward voltage: 0.75V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Quantity in set/package: 7500pcs.
Application: automotive industry
Case: SMA
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| MRS16000C8209FCT00 |
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Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 82Ω; 400mW; ±1%; 200V; Ø0.5x29mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 82Ω
Power: 0.4W
Tolerance: ±1%
Operating voltage: 200V
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Length: 3.6mm
Diameter: 1.6mm
Category: THT Resistors
Description: Resistor: thin film; THT; 82Ω; 400mW; ±1%; 200V; Ø0.5x29mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 82Ω
Power: 0.4W
Tolerance: ±1%
Operating voltage: 200V
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Length: 3.6mm
Diameter: 1.6mm
на замовлення 3820 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 57+ | 8.04 грн |
| 250+ | 4.95 грн |
| 650+ | 3.81 грн |
| 1000+ | 3.32 грн |
| 1300+ | 3.11 грн |
| 2500+ | 2.65 грн |
| MRS25000C8209FCT00 |
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Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 82Ω; 600mW; ±1%; 350V; Ø0.6x28mm; 50ppm/°C
Diameter: 2.5mm
Mounting: THT
Type of resistor: thin film
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
Length: 6.5mm
Power: 0.6W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Resistance: 82Ω
Operating voltage: 350V
Category: THT Resistors
Description: Resistor: thin film; THT; 82Ω; 600mW; ±1%; 350V; Ø0.6x28mm; 50ppm/°C
Diameter: 2.5mm
Mounting: THT
Type of resistor: thin film
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
Length: 6.5mm
Power: 0.6W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Resistance: 82Ω
Operating voltage: 350V
на замовлення 412 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.32 грн |
| BFC233915474 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 470nF; 800VDC; 310VAC; THT; ±10%
Type of capacitor: polypropylene
Capacitance: 0.47µF
Operating voltage: 310V AC; 800V DC
Tolerance: ±10%
Mounting: THT
Terminal pitch: 22.5mm
Kind of capacitor: X2
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 470nF; 800VDC; 310VAC; THT; ±10%
Type of capacitor: polypropylene
Capacitance: 0.47µF
Operating voltage: 310V AC; 800V DC
Tolerance: ±10%
Mounting: THT
Terminal pitch: 22.5mm
Kind of capacitor: X2
на замовлення 274 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 159.07 грн |
| 10+ | 110.78 грн |
| 50+ | 89.80 грн |
| 100+ | 80.57 грн |
| 250+ | 72.18 грн |
| BFC233921474 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 470nF; 800VDC; 310VAC; THT; ±20%
Type of capacitor: polypropylene
Capacitance: 0.47µF
Operating voltage: 310V AC; 800V DC
Tolerance: ±20%
Mounting: THT
Terminal pitch: 22.5mm
Kind of capacitor: X2
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 470nF; 800VDC; 310VAC; THT; ±20%
Type of capacitor: polypropylene
Capacitance: 0.47µF
Operating voltage: 310V AC; 800V DC
Tolerance: ±20%
Mounting: THT
Terminal pitch: 22.5mm
Kind of capacitor: X2
на замовлення 757 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.25 грн |
| 22+ | 19.89 грн |
| 50+ | 16.79 грн |
| 100+ | 14.94 грн |
| 200+ | 13.51 грн |
| 400+ | 13.01 грн |
| 600+ | 12.76 грн |
| MCT06030C1002FP500 |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10kΩ; 0.125W; ±1%; MCT0603; 0; 75V
Type of resistor: thin film
Case - inch: 0603
Case - mm: 1608
Resistance: 10kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Manufacturer series: MCT0603
Mounting: SMD
Version: 0
Operating temperature: -55...125°C; -55...155°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10kΩ; 0.125W; ±1%; MCT0603; 0; 75V
Type of resistor: thin film
Case - inch: 0603
Case - mm: 1608
Resistance: 10kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Manufacturer series: MCT0603
Mounting: SMD
Version: 0
Operating temperature: -55...125°C; -55...155°C
на замовлення 16260 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 68+ | 6.70 грн |
| 192+ | 2.19 грн |
| 260+ | 1.62 грн |
| 500+ | 1.33 грн |
| 1000+ | 1.23 грн |
| 5000+ | 1.03 грн |
| 10000+ | 0.96 грн |
| 15000+ | 0.92 грн |
| SIHG050N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Pulsed drain current: 155A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Pulsed drain current: 155A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
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| SIHP050N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Pulsed drain current: 155A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Pulsed drain current: 155A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
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| SS36HM3_A/H |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; 7 inch reel; 850pcs.
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: 7 inch reel
Quantity in set/package: 850pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; 7 inch reel; 850pcs.
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: 7 inch reel
Quantity in set/package: 850pcs.
Application: automotive industry
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| MAL213639101E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 100VDC; Ø12.5x20mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 100V DC
Body dimensions: Ø12.5x20mm
Tolerance: ±20%
Operating temperature: -55...105°C
Manufacturer series: MAL2136
Height: 20mm
Diameter: 12.5mm
Terminal pitch: 5mm
Service life: 7000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 100VDC; Ø12.5x20mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 100µF
Operating voltage: 100V DC
Body dimensions: Ø12.5x20mm
Tolerance: ±20%
Operating temperature: -55...105°C
Manufacturer series: MAL2136
Height: 20mm
Diameter: 12.5mm
Terminal pitch: 5mm
Service life: 7000h
на замовлення 389 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 178.05 грн |
| 10+ | 111.62 грн |
| 50+ | 93.16 грн |
| 100+ | 84.77 грн |
| 200+ | 77.21 грн |
| IRF530STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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| IRF740ALPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 968 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 155.46 грн |
| 10+ | 109.94 грн |
| 50+ | 104.07 грн |
| 100+ | 99.03 грн |
| 250+ | 91.48 грн |
| 500+ | 86.44 грн |
| IRF740ASTRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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| IRF740PBF-BE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 461 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 122.92 грн |
| 10+ | 92.32 грн |
| 25+ | 88.96 грн |
| 50+ | 84.77 грн |
| 100+ | 77.21 грн |
| IRF740STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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| IRFZ44RPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
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| IRFZ44SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
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| IRFZ44STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
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| IRFZ24PBF | ![]() |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 463 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 139.19 грн |
| 10+ | 59.00 грн |
| 50+ | 50.19 грн |
| 100+ | 47.25 грн |
| 250+ | 43.98 грн |
| IRFZ40PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
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| IRFZ48PBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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| IRFZ48RSPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
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| IRFZ48SPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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| IRFZ48STRLPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BFC238330104 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Mounting: THT
Climate class: 55/110/56
Type of capacitor: polypropylene
Capacitance: 0.1µF
Leads: 2pin
Terminal pitch: 22.5mm
Body dimensions: 26x19.5x10mm
Tolerance: ±5%
Operating voltage: 350V AC; 1kV DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Mounting: THT
Climate class: 55/110/56
Type of capacitor: polypropylene
Capacitance: 0.1µF
Leads: 2pin
Terminal pitch: 22.5mm
Body dimensions: 26x19.5x10mm
Tolerance: ±5%
Operating voltage: 350V AC; 1kV DC
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| BFC238330153 |
![]() |
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT
Mounting: THT
Lead length: 3.5mm
Climate class: 55/110/56
Type of capacitor: polypropylene
Capacitance: 15nF
Leads: 2pin
Terminal pitch: 15mm
Body dimensions: 17.5x11x5mm
Tolerance: ±5%
Operating voltage: 350V AC; 1kV DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT
Mounting: THT
Lead length: 3.5mm
Climate class: 55/110/56
Type of capacitor: polypropylene
Capacitance: 15nF
Leads: 2pin
Terminal pitch: 15mm
Body dimensions: 17.5x11x5mm
Tolerance: ±5%
Operating voltage: 350V AC; 1kV DC
на замовлення 7 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 117.50 грн |
| IRL540SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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| IRL540STRLPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
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| TS53YJ103MR10 |
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Виробник: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%; 200V
Type of potentiometer: mounting
Kind of potentiometer: single turn
Resistance: 10kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Body dimensions: 5x5x2.7mm
Track material: cermet
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1.5Ncm
IP rating: IP67
Operating temperature: -55...155°C
Operating voltage: 200V
Leads: YJ
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%; 200V
Type of potentiometer: mounting
Kind of potentiometer: single turn
Resistance: 10kΩ
Power: 0.25W
Mounting: SMD
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Characteristics: linear
Body dimensions: 5x5x2.7mm
Track material: cermet
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1.5Ncm
IP rating: IP67
Operating temperature: -55...155°C
Operating voltage: 200V
Leads: YJ
на замовлення 241 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 161.78 грн |
| 10+ | 129.25 грн |
| 25+ | 118.34 грн |
| 50+ | 110.78 грн |
| 100+ | 102.39 грн |
| 1.5KE82CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 364 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 28.02 грн |
| 19+ | 23.08 грн |
| 100+ | 20.23 грн |
| 250+ | 18.55 грн |
| GRC00DD1021CTNL |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 10x16mm
Service life: 2000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 10x16mm
Service life: 2000h
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| IRFP21N60LPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Gate charge: 150nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Gate charge: 150nC
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| IRF540STRLPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
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| IRF540STRRPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
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| GSC00AF2211VARL |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Manufacturer series: GSC
Nominal life: 2000h
Height: 10mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Manufacturer series: GSC
Nominal life: 2000h
Height: 10mm
на замовлення 121 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 19.61 грн |
| 50+ | 11.67 грн |
| 100+ | 8.90 грн |
| BZX55C3V0-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 19236 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.33 грн |
| 103+ | 4.11 грн |
| 122+ | 3.44 грн |
| 182+ | 2.31 грн |
| 1000+ | 1.65 грн |
| 5000+ | 1.51 грн |
| 10000+ | 1.48 грн |
| IRF510STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
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| IRF830ALPBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 934 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 162.69 грн |
| 5+ | 133.44 грн |
| 10+ | 100.71 грн |
| 50+ | 70.50 грн |
| 100+ | 66.30 грн |
| IRF830ASPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRF830ASTRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRF830BPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 1.5Ω
Drain current: 5.3A
Pulsed drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 104W
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 1.5Ω
Drain current: 5.3A
Pulsed drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 104W
Drain-source voltage: 500V
товару немає в наявності
В кошику
од. на суму грн.
| IRF840ASTRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.


























