| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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MCT06030E2212BP100 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 22.1kΩ; SMD; 0603; 0.125W; ±0.1%; MCT0603; 0 Type of resistor: thin film Resistance: 22.1kΩ Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.125W Tolerance: ±0.1% Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 15ppm/°C Version: 0 Roll diameter max.: 180mm Manufacturer series: MCT0603 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||
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MCT06030E2212BP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 22.1kΩ; SMD; 0603; 0.125W; ±0.1%; MCT0603; 0 Type of resistor: thin film Resistance: 22.1kΩ Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.125W Tolerance: ±0.1% Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 15ppm/°C Version: 0 Roll diameter max.: 180mm Quantity in set/package: 5000pcs. Manufacturer series: MCT0603 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||
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IRFL9014PBF | VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -1.1A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.1A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||
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RCA1206100RFHEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 100Ω; 1206; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 100Ω Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||
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RCA120691K0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 91kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 91kΩ Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating voltage: 200V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||
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RCA0402430RFKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 430Ω; 0402; 63mW; ±1%; 50V; -55÷155°C Operating temperature: -55...155°C Resistance: 430Ω Power: 63mW Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating voltage: 50V Case - inch: 0402 Case - mm: 1005 Tolerance: ±1% Type of resistor: thick film |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||
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RCA0402432RFKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 432Ω; 0402; 63mW; ±1%; 50V; -55÷155°C Operating temperature: -55...155°C Resistance: 432Ω Power: 63mW Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating voltage: 50V Case - inch: 0402 Case - mm: 1005 Tolerance: ±1% Type of resistor: thick film |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||
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RCA040243R2FKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 43.2Ω; 0402; 63mW; ±1%; 50V; -55÷155°C Operating temperature: -55...155°C Resistance: 43.2Ω Power: 63mW Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating voltage: 50V Case - inch: 0402 Case - mm: 1005 Tolerance: ±1% Type of resistor: thick film |
товару немає в наявності |
Мінімальне замовлення: 100000 шт В кошику од. на суму грн. | ||||||
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CRCW0402430RFKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 430Ω; SMD; 0402; 100mW; ±1%; 75V; 1x0.5x0.35mm Operating temperature: -55...155°C Resistance: 430Ω Body dimensions: 1x0.5x0.35mm Power: 0.1W Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Operating voltage: 75V Case - inch: 0402 Case - mm: 1005 Quantity in set/package: 10000pcs. Tolerance: ±1% Type of resistor: thick film Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||
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CRCW040243R2FKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 43.2Ω; SMD; 0402; 100mW; ±1%; 75V; -55÷155°C Operating temperature: -55...155°C Resistance: 43.2Ω Body dimensions: 1x0.5x0.35mm Power: 0.1W Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Operating voltage: 75V Case - inch: 0402 Case - mm: 1005 Quantity in set/package: 10000pcs. Tolerance: ±1% Type of resistor: thick film Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||
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GBU8J-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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GBU8J-M3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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GBU8J-M3/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| MBRF1060-E3/45 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AC; Ufmax: 800mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 0.8V Max. forward impulse current: 150A Leakage current: 0.1mA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||
| MBRF1060HE3_A/P | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AC; Ufmax: 800mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 0.8V Max. forward impulse current: 150A Leakage current: 0.1mA |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||
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RCA12062R20FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 2.2Ω; 1206; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 2.2Ω Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating temperature: -55...155°C |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||
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RCA12062R20JNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 2.2Ω; 1206; 250mW; ±5%; 200V; -55÷155°C Type of resistor: thick film Resistance: 2.2Ω Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±5% Operating voltage: 200V Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating temperature: -55...155°C |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||
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CRCW12062R20JNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 2.2Ω; SMD; 1206; 0.25W; ±5%; 200V; -55÷125°C Type of resistor: thick film Resistance: 2.2Ω Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±5% Operating voltage: 200V Mounting: SMD Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||
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RCS06032R20FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 2.2Ω; SMD; 0603; 250mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 2.2Ω Mounting: SMD Case - inch: 0603 Case - mm: 1608 Power: 0.25W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. Body dimensions: 1.55x0.85x0.45mm Roll diameter max.: 180mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||
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SM6T18A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 17.1V; 24A; unidirectional; ±5%; DO214AA,SMB; SM6T Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 17.1V Max. forward impulse current: 24A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SM6T Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||
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SM6T18A-M3/5B | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 17.1V; 24A; unidirectional; ±5%; DO214AA,SMB; SM6T Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 17.1V Max. forward impulse current: 24A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SM6T Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 9600 шт В кошику од. на суму грн. | ||||||
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SM6T18AHE3_B/I | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 17.1V; unidirectional; ±5%; DO214AA,SMB; SM6T Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 17.1V Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: 13 inch reel; tape Manufacturer series: SM6T Technology: TransZorb® Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 9600 шт В кошику од. на суму грн. | ||||||
| SI7216DN-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 39mΩ Pulsed drain current: 20A Power dissipation: 20.8W Gate charge: 19nC Technology: TrenchFET® Gate-source voltage: ±20V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||
| SI7216DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 39mΩ Pulsed drain current: 20A Power dissipation: 20.8W Gate charge: 19nC Technology: TrenchFET® Gate-source voltage: ±20V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||
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SMCJ12CA-E3/57T | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; ±5%; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 75.4A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: SMCJ Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape |
на замовлення 240 шт: термін постачання 14-30 дні (днів) |
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SMCJ12CA-E3/9AT | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; ±5%; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 75.4A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: SMCJ Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||
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SMCJ12CA-M3/57T | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 75.4A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3400 шт В кошику од. на суму грн. | ||||||
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SMCJ12CA-M3/9AT | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 75.4A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||
| VS-70TPS16-M3 | VISHAY |
Category: SMD/THT thyristors Description: Thyristor: standard; 1.6kV; Ifmax: 75A; 70A; Igt: 100mA; TO247-3; THT Type of thyristor: standard Max. off-state voltage: 1.6kV Max. load current: 75A Load current: 70A Gate current: 100mA Case: TO247-3 Mounting: THT Max. forward impulse current: 930A Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||
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RCA0805475RFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 475Ω; 0805; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Resistance: 475Ω Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||
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CRCW0805475RFHEAP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 475Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Resistance: 475Ω Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. Body dimensions: 2x1.25x0.5mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||
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CRCW0805475RFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 475Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Resistance: 475Ω Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. Body dimensions: 2x1.25x0.45mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||
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TSTA7100 | VISHAY |
Category: IR LEDs Description: IR transmitter; 5.5mm; 875nm; transparent; 50mW; 5°; THT Type of diode: IR transmitter LED diameter: 5.5mm Wavelength: 875nm LED lens: transparent Radiant power: 50mW Viewing angle: 5° Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||
| VS-16CTQ080-1HM3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 80V; 8Ax2; TO262AA; Ufmax: 720mV Type of diode: Schottky rectifying Case: TO262AA Mounting: THT Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: tube Manufacturer standard package: 50pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
 |
VS-16CTQ080-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 80V; 8Ax2; TO220AB; Ufmax: 880mV Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.88V Max. load current: 16A Kind of package: tube Manufacturer standard package: 50pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
VS-16CTQ080S-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: tube Manufacturer standard package: 50pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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VS-16CTQ080SHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: tube Manufacturer standard package: 50pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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VS-16CTQ080STRL-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: 13 inch reel Manufacturer standard package: 800pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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VS-16CTQ080STRLHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: 13 inch reel Manufacturer standard package: 800pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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VS-16CTQ080STRR-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: 13 inch reel Manufacturer standard package: 800pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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VS-16CTQ080STRRHM3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2 Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 80V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.72V Max. load current: 16A Kind of package: 13 inch reel Manufacturer standard package: 800pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| MSE1PD-M3/89A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 780ns; DO219AD,microSMP; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 780ns Semiconductor structure: single diode Capacitance: 5pF Case: DO219AD; microSMP Max. forward voltage: 0.98V Max. forward impulse current: 20A Leakage current: 50µA Kind of package: 7 inch reel Manufacturer standard package: 4500pcs. |
товару немає в наявності |
Мінімальне замовлення: 4500 шт В кошику од. на суму грн. | |||||||
| MSE1PDHM3/89A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; DO219AD,microSMP; Ufmax: 1.2V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Case: DO219AD; microSMP Max. forward voltage: 1.2V Max. forward impulse current: 15A |
товару немає в наявності |
Мінімальне замовлення: 4500 шт В кошику од. на суму грн. | |||||||
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RCA08051R00JNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1Ω; 0805; 125mW; ±5%; 150V; -55÷155°C Type of resistor: thick film Resistance: 1Ω Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±5% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||
 |
CRCW08051R20FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 125mW,250mW; ±1%; 2x1.25x0.45mm Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W; 0.25W Tolerance: ±1% Operating temperature: -55...155°C Conform to the norm: AEC-Q200 Body dimensions: 2x1.25x0.45mm Temperature coefficient: 100ppm/°C |
на замовлення 100000 шт: термін постачання 14-30 дні (днів) |
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CRCW080551R1FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 51.1Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C Type of resistor: thick film Resistance: 51.1Ω Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W; 0.25W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C Conform to the norm: AEC-Q200 Body dimensions: 2x1.25x0.45mm Temperature coefficient: 100ppm/°C |
на замовлення 45000 шт: термін постачання 14-30 дні (днів) |
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CRCW0805121RFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 121Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C Type of resistor: thick film Resistance: 121Ω Mounting: SMD Case - inch: 0805 Case - mm: 2012 Power: 0.125W; 0.25W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C Conform to the norm: AEC-Q200 Body dimensions: 2x1.25x0.45mm Temperature coefficient: 100ppm/°C |
на замовлення 100000 шт: термін постачання 14-30 дні (днів) |
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PR01000101508JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; 1.5Ω; THT; 1W; ±5%; 350V; Ø2.5x8mm; 250ppm/°C Type of resistor: power metal Resistance: 1.5Ω Mounting: THT Power: 1W Tolerance: ±5% Operating voltage: 350V Body dimensions: Ø2.5x8mm Temperature coefficient: 250ppm/°C Length: 8mm Diameter: 2.5mm Leads: axial Resistor features: high power and small dimension |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||
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SMM02070C1508FBP00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 1.5Ω; SMD; MELF; 0207; 1W; ±1%; 350V; Ø2.2x5.8mm Type of resistor: thin film Resistance: 1.5Ω Mounting: SMD Case: MELF Case - inch: 0207 Case - mm: 6123 Power: 1W Tolerance: ±1% Operating voltage: 350V Body dimensions: Ø2.2x5.8mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC-Q200 Length: 5.8mm Diameter: 2.2mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
SIDR870ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 300A Power dissipation: 125W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||
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SIDR5102EP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 126A Pulsed drain current: 300A Power dissipation: 150W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||
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SIDR510EP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 148A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 148A Pulsed drain current: 300A Power dissipation: 150W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||
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SIDR870ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 300A Power dissipation: 125W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||
| SIJH112E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 225A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 225A Pulsed drain current: 300A Power dissipation: 333W Case: PowerPAK® 8x8L Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||
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SIR870ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 300A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||
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SIR870ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 300A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||
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SIR512DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 80.7A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80.7A Pulsed drain current: 300A Power dissipation: 96.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 30.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||
 |
Z4KE200A-E3/54 | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.5W; 200V; DO41; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 200V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 5500 шт В кошику од. на суму грн. | ||||||
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P4KE200A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 400W; 190V; 1.5A; unidirectional; DO41; TransZorb®; P4KE Type of diode: TVS Case: DO41 Mounting: THT Semiconductor structure: unidirectional Kind of package: 13 inch reel Leakage current: 1µA Breakdown voltage: 190V Manufacturer series: P4KE Max. forward impulse current: 1.5A Peak pulse power dissipation: 0.4kW Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 171V |
товару немає в наявності |
Мінімальне замовлення: 5500 шт В кошику од. на суму грн. | ||||||
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Z4KE200A-E3/73 | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.5W; 200V; DO41; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 200V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| MCT06030E2212BP100 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 22.1kΩ; SMD; 0603; 0.125W; ±0.1%; MCT0603; 0
Type of resistor: thin film
Resistance: 22.1kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 15ppm/°C
Version: 0
Roll diameter max.: 180mm
Manufacturer series: MCT0603
Category: SMD resistors
Description: Resistor: thin film; 22.1kΩ; SMD; 0603; 0.125W; ±0.1%; MCT0603; 0
Type of resistor: thin film
Resistance: 22.1kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 15ppm/°C
Version: 0
Roll diameter max.: 180mm
Manufacturer series: MCT0603
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MCT06030E2212BP500 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 22.1kΩ; SMD; 0603; 0.125W; ±0.1%; MCT0603; 0
Type of resistor: thin film
Resistance: 22.1kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 15ppm/°C
Version: 0
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Manufacturer series: MCT0603
Category: SMD resistors
Description: Resistor: thin film; 22.1kΩ; SMD; 0603; 0.125W; ±0.1%; MCT0603; 0
Type of resistor: thin film
Resistance: 22.1kΩ
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.125W
Tolerance: ±0.1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 15ppm/°C
Version: 0
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Manufacturer series: MCT0603
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IRFL9014PBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.1A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.1A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.1A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| RCA1206100RFHEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 100Ω; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 100Ω
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 100Ω; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 100Ω
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| RCA120691K0FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 91kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 91kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating voltage: 200V
Category: SMD resistors
Description: Resistor: thick film; 91kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 91kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating voltage: 200V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| RCA0402430RFKED |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 430Ω; 0402; 63mW; ±1%; 50V; -55÷155°C
Operating temperature: -55...155°C
Resistance: 430Ω
Power: 63mW
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
Tolerance: ±1%
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; 430Ω; 0402; 63mW; ±1%; 50V; -55÷155°C
Operating temperature: -55...155°C
Resistance: 430Ω
Power: 63mW
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
Tolerance: ±1%
Type of resistor: thick film
товару немає в наявності
Мінімальне замовлення: 20000 шт
В кошику
од. на суму грн.
| RCA0402432RFKED |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 432Ω; 0402; 63mW; ±1%; 50V; -55÷155°C
Operating temperature: -55...155°C
Resistance: 432Ω
Power: 63mW
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
Tolerance: ±1%
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; 432Ω; 0402; 63mW; ±1%; 50V; -55÷155°C
Operating temperature: -55...155°C
Resistance: 432Ω
Power: 63mW
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
Tolerance: ±1%
Type of resistor: thick film
товару немає в наявності
Мінімальне замовлення: 20000 шт
В кошику
од. на суму грн.
| RCA040243R2FKED |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 43.2Ω; 0402; 63mW; ±1%; 50V; -55÷155°C
Operating temperature: -55...155°C
Resistance: 43.2Ω
Power: 63mW
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
Tolerance: ±1%
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; 43.2Ω; 0402; 63mW; ±1%; 50V; -55÷155°C
Operating temperature: -55...155°C
Resistance: 43.2Ω
Power: 63mW
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating voltage: 50V
Case - inch: 0402
Case - mm: 1005
Tolerance: ±1%
Type of resistor: thick film
товару немає в наявності
Мінімальне замовлення: 100000 шт
В кошику
од. на суму грн.
| CRCW0402430RFKED |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 430Ω; SMD; 0402; 100mW; ±1%; 75V; 1x0.5x0.35mm
Operating temperature: -55...155°C
Resistance: 430Ω
Body dimensions: 1x0.5x0.35mm
Power: 0.1W
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 75V
Case - inch: 0402
Case - mm: 1005
Quantity in set/package: 10000pcs.
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; 430Ω; SMD; 0402; 100mW; ±1%; 75V; 1x0.5x0.35mm
Operating temperature: -55...155°C
Resistance: 430Ω
Body dimensions: 1x0.5x0.35mm
Power: 0.1W
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 75V
Case - inch: 0402
Case - mm: 1005
Quantity in set/package: 10000pcs.
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| CRCW040243R2FKED |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 43.2Ω; SMD; 0402; 100mW; ±1%; 75V; -55÷155°C
Operating temperature: -55...155°C
Resistance: 43.2Ω
Body dimensions: 1x0.5x0.35mm
Power: 0.1W
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 75V
Case - inch: 0402
Case - mm: 1005
Quantity in set/package: 10000pcs.
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; 43.2Ω; SMD; 0402; 100mW; ±1%; 75V; -55÷155°C
Operating temperature: -55...155°C
Resistance: 43.2Ω
Body dimensions: 1x0.5x0.35mm
Power: 0.1W
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Operating voltage: 75V
Case - inch: 0402
Case - mm: 1005
Quantity in set/package: 10000pcs.
Tolerance: ±1%
Type of resistor: thick film
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| GBU8J-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| GBU8J-M3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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| GBU8J-M3/51 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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| MBRF1060-E3/45 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AC; Ufmax: 800mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AC; Ufmax: 800mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Leakage current: 0.1mA
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Мінімальне замовлення: 1000 шт
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| MBRF1060HE3_A/P |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AC; Ufmax: 800mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; ITO220AC; Ufmax: 800mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Leakage current: 0.1mA
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Мінімальне замовлення: 2000 шт
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| RCA12062R20FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 2.2Ω; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 2.2Ω
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 2.2Ω; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 2.2Ω
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
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Мінімальне замовлення: 10000 шт
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| RCA12062R20JNEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 2.2Ω; 1206; 250mW; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 2.2Ω
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 2.2Ω; 1206; 250mW; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 2.2Ω
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
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Мінімальне замовлення: 10000 шт
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| CRCW12062R20JNEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 2.2Ω; SMD; 1206; 0.25W; ±5%; 200V; -55÷125°C
Type of resistor: thick film
Resistance: 2.2Ω
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; 2.2Ω; SMD; 1206; 0.25W; ±5%; 200V; -55÷125°C
Type of resistor: thick film
Resistance: 2.2Ω
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
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Мінімальне замовлення: 5000 шт
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| RCS06032R20FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 2.2Ω; SMD; 0603; 250mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 2.2Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.25W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 1.55x0.85x0.45mm
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: thick film; 2.2Ω; SMD; 0603; 250mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 2.2Ω
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Power: 0.25W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 1.55x0.85x0.45mm
Roll diameter max.: 180mm
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Мінімальне замовлення: 5000 шт
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| SM6T18A-E3/5B |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.1V; 24A; unidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SM6T
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.1V; 24A; unidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SM6T
Technology: TransZorb®
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Мінімальне замовлення: 3200 шт
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| SM6T18A-M3/5B |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.1V; 24A; unidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SM6T
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.1V; 24A; unidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SM6T
Technology: TransZorb®
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Мінімальне замовлення: 9600 шт
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| SM6T18AHE3_B/I |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.1V; unidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: SM6T
Technology: TransZorb®
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 17.1V; unidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: SM6T
Technology: TransZorb®
Application: automotive industry
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Мінімальне замовлення: 9600 шт
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| SI7216DN-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 39mΩ
Pulsed drain current: 20A
Power dissipation: 20.8W
Gate charge: 19nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 39mΩ
Pulsed drain current: 20A
Power dissipation: 20.8W
Gate charge: 19nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| SI7216DN-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 39mΩ
Pulsed drain current: 20A
Power dissipation: 20.8W
Gate charge: 19nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 39mΩ
Pulsed drain current: 20A
Power dissipation: 20.8W
Gate charge: 19nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| SMCJ12CA-E3/57T |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
на замовлення 240 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 28.34 грн |
| 23+ | 18.51 грн |
| 100+ | 17.32 грн |
| SMCJ12CA-E3/9AT |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
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Мінімальне замовлення: 3500 шт
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| SMCJ12CA-M3/57T |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
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Мінімальне замовлення: 3400 шт
В кошику
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| SMCJ12CA-M3/9AT |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
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Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| VS-70TPS16-M3 |
Виробник: VISHAY
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.6kV; Ifmax: 75A; 70A; Igt: 100mA; TO247-3; THT
Type of thyristor: standard
Max. off-state voltage: 1.6kV
Max. load current: 75A
Load current: 70A
Gate current: 100mA
Case: TO247-3
Mounting: THT
Max. forward impulse current: 930A
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.6kV; Ifmax: 75A; 70A; Igt: 100mA; TO247-3; THT
Type of thyristor: standard
Max. off-state voltage: 1.6kV
Max. load current: 75A
Load current: 70A
Gate current: 100mA
Case: TO247-3
Mounting: THT
Max. forward impulse current: 930A
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| RCA0805475RFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 475Ω; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 475Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 475Ω; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 475Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
товару немає в наявності
Мінімальне замовлення: 20000 шт
В кошику
од. на суму грн.
| CRCW0805475RFHEAP |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 475Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 475Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 2x1.25x0.5mm
Category: SMD resistors
Description: Resistor: thick film; 475Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 475Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 2x1.25x0.5mm
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| CRCW0805475RFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 475Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 475Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 2x1.25x0.45mm
Category: SMD resistors
Description: Resistor: thick film; 475Ω; SMD; 0805; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 475Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 2x1.25x0.45mm
товару немає в наявності
Мінімальне замовлення: 5000 шт
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од. на суму грн.
| TSTA7100 |
|
Виробник: VISHAY
Category: IR LEDs
Description: IR transmitter; 5.5mm; 875nm; transparent; 50mW; 5°; THT
Type of diode: IR transmitter
LED diameter: 5.5mm
Wavelength: 875nm
LED lens: transparent
Radiant power: 50mW
Viewing angle: 5°
Mounting: THT
Category: IR LEDs
Description: IR transmitter; 5.5mm; 875nm; transparent; 50mW; 5°; THT
Type of diode: IR transmitter
LED diameter: 5.5mm
Wavelength: 875nm
LED lens: transparent
Radiant power: 50mW
Viewing angle: 5°
Mounting: THT
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Мінімальне замовлення: 1000 шт
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| VS-16CTQ080-1HM3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 8Ax2; TO262AA; Ufmax: 720mV
Type of diode: Schottky rectifying
Case: TO262AA
Mounting: THT
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 8Ax2; TO262AA; Ufmax: 720mV
Type of diode: Schottky rectifying
Case: TO262AA
Mounting: THT
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
Application: automotive industry
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| VS-16CTQ080-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 8Ax2; TO220AB; Ufmax: 880mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.88V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 8Ax2; TO220AB; Ufmax: 880mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.88V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
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| VS-16CTQ080S-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
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| VS-16CTQ080SHM3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: tube
Manufacturer standard package: 50pcs.
Application: automotive industry
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| VS-16CTQ080STRL-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
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| VS-16CTQ080STRLHM3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Application: automotive industry
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| VS-16CTQ080STRR-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
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| VS-16CTQ080STRRHM3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 80V; 8Ax2
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 80V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.72V
Max. load current: 16A
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Application: automotive industry
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| MSE1PD-M3/89A |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 780ns; DO219AD,microSMP; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 780ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: DO219AD; microSMP
Max. forward voltage: 0.98V
Max. forward impulse current: 20A
Leakage current: 50µA
Kind of package: 7 inch reel
Manufacturer standard package: 4500pcs.
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 780ns; DO219AD,microSMP; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 780ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: DO219AD; microSMP
Max. forward voltage: 0.98V
Max. forward impulse current: 20A
Leakage current: 50µA
Kind of package: 7 inch reel
Manufacturer standard package: 4500pcs.
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Мінімальне замовлення: 4500 шт
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| MSE1PDHM3/89A |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; DO219AD,microSMP; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: DO219AD; microSMP
Max. forward voltage: 1.2V
Max. forward impulse current: 15A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; DO219AD,microSMP; Ufmax: 1.2V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: DO219AD; microSMP
Max. forward voltage: 1.2V
Max. forward impulse current: 15A
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Мінімальне замовлення: 4500 шт
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| RCA08051R00JNEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1Ω; 0805; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 1Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 1Ω; 0805; 125mW; ±5%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 1Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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Мінімальне замовлення: 20000 шт
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| CRCW08051R20FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 125mW,250mW; ±1%; 2x1.25x0.45mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 125mW,250mW; ±1%; 2x1.25x0.45mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
на замовлення 100000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 0.74 грн |
| CRCW080551R1FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 51.1Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C
Type of resistor: thick film
Resistance: 51.1Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; 51.1Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C
Type of resistor: thick film
Resistance: 51.1Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
на замовлення 45000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30000+ | 0.25 грн |
| CRCW0805121RFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 121Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C
Type of resistor: thick film
Resistance: 121Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; 121Ω; SMD; 0805; 125mW,250mW; ±1%; -55÷155°C
Type of resistor: thick film
Resistance: 121Ω
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Power: 0.125W; 0.25W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.45mm
Temperature coefficient: 100ppm/°C
на замовлення 100000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30000+ | 0.25 грн |
| PR01000101508JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; 1.5Ω; THT; 1W; ±5%; 350V; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Resistance: 1.5Ω
Mounting: THT
Power: 1W
Tolerance: ±5%
Operating voltage: 350V
Body dimensions: Ø2.5x8mm
Temperature coefficient: 250ppm/°C
Length: 8mm
Diameter: 2.5mm
Leads: axial
Resistor features: high power and small dimension
Category: THT Resistors
Description: Resistor: power metal; 1.5Ω; THT; 1W; ±5%; 350V; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Resistance: 1.5Ω
Mounting: THT
Power: 1W
Tolerance: ±5%
Operating voltage: 350V
Body dimensions: Ø2.5x8mm
Temperature coefficient: 250ppm/°C
Length: 8mm
Diameter: 2.5mm
Leads: axial
Resistor features: high power and small dimension
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Мінімальне замовлення: 5000 шт
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| SMM02070C1508FBP00 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 1.5Ω; SMD; MELF; 0207; 1W; ±1%; 350V; Ø2.2x5.8mm
Type of resistor: thin film
Resistance: 1.5Ω
Mounting: SMD
Case: MELF
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±1%
Operating voltage: 350V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
Category: SMD resistors
Description: Resistor: thin film; 1.5Ω; SMD; MELF; 0207; 1W; ±1%; 350V; Ø2.2x5.8mm
Type of resistor: thin film
Resistance: 1.5Ω
Mounting: SMD
Case: MELF
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±1%
Operating voltage: 350V
Body dimensions: Ø2.2x5.8mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC-Q200
Length: 5.8mm
Diameter: 2.2mm
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| SIDR870ADP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 300A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 300A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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од. на суму грн.
| SIDR5102EP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 126A
Pulsed drain current: 300A
Power dissipation: 150W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 126A
Pulsed drain current: 300A
Power dissipation: 150W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIDR510EP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 148A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 300A
Power dissipation: 150W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 148A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 300A
Power dissipation: 150W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIDR870ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 300A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 300A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 6000 шт
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од. на суму грн.
| SIJH112E-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 225A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 225A
Pulsed drain current: 300A
Power dissipation: 333W
Case: PowerPAK® 8x8L
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 225A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 225A
Pulsed drain current: 300A
Power dissipation: 333W
Case: PowerPAK® 8x8L
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2000 шт
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од. на суму грн.
| SIR870ADP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 300A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 300A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIR870ADP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SIR512DP-T1-RE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 80.7A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80.7A
Pulsed drain current: 300A
Power dissipation: 96.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 80.7A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80.7A
Pulsed drain current: 300A
Power dissipation: 96.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 6000 шт
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од. на суму грн.
| Z4KE200A-E3/54 |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 200V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 200V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 200V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 200V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 5500 шт
В кошику
од. на суму грн.
| P4KE200A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 400W; 190V; 1.5A; unidirectional; DO41; TransZorb®; P4KE
Type of diode: TVS
Case: DO41
Mounting: THT
Semiconductor structure: unidirectional
Kind of package: 13 inch reel
Leakage current: 1µA
Breakdown voltage: 190V
Manufacturer series: P4KE
Max. forward impulse current: 1.5A
Peak pulse power dissipation: 0.4kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 171V
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 400W; 190V; 1.5A; unidirectional; DO41; TransZorb®; P4KE
Type of diode: TVS
Case: DO41
Mounting: THT
Semiconductor structure: unidirectional
Kind of package: 13 inch reel
Leakage current: 1µA
Breakdown voltage: 190V
Manufacturer series: P4KE
Max. forward impulse current: 1.5A
Peak pulse power dissipation: 0.4kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 171V
товару немає в наявності
Мінімальне замовлення: 5500 шт
В кошику
од. на суму грн.
| Z4KE200A-E3/73 |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 200V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 200V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 200V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 200V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.