| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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FEP16GT-E3/45 | VISHAY |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; tube; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: glass passivated; ultrafast switching Max. forward impulse current: 125A Case: TO220AB Kind of package: tube Max. forward voltage: 1.3V Max. load current: 16A Heatsink thickness: 1.14...1.39mm Reverse recovery time: 50ns |
на замовлення 577 шт: термін постачання 14-30 дні (днів) |
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GBU6J-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Max. off-state voltage: 0.6kV Load current: 6A Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Case: GBU Kind of package: tube Max. forward voltage: 1V Version: flat Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBU6J-E3/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Max. off-state voltage: 0.6kV Load current: 6A Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Case: GBU Kind of package: in-tray Max. forward voltage: 1V Version: flat Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBU6J-M3/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Max. off-state voltage: 0.6kV Load current: 6A Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Case: GBU Kind of package: in-tray Max. forward voltage: 1V Version: flat Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMA02040C6800FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 680Ω; SMD; MiniMELF; 0204; 250mW; ±1%; 200V Type of resistor: thin film Resistance: 680Ω Case - inch: 0204 Case - mm: 0510 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Temperature coefficient: 50ppm/°C Body dimensions: Ø1.4x3.6mm Case: MiniMELF Conform to the norm: AEC-Q200 Quantity in set/package: 3000pcs. Diameter: 1.4mm Mounting: SMD Operating temperature: -55...155°C Length: 3.6mm |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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SMBJ100CA-E3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||||||
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SMBJ100CA-M3/52 | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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SMBJ100CA-M3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 9600 шт В кошику од. на суму грн. | ||||||||||||||
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SMCJ100CA-E3/57T | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 0.1kV Breakdown voltage: 111...123V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® |
на замовлення 850 шт: термін постачання 14-30 дні (днів) |
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SMCJ100CA-E3/9AT | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; DO214AB,SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 0.1kV Breakdown voltage: 111...123V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||||
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ZMY62-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 62V; SMD; DO213AB,MELF glass; single diode; ZMY Type of diode: Zener Power dissipation: 1W Zener voltage: 62V Mounting: SMD Tolerance: ±5% Case: DO213AB; MELF glass Semiconductor structure: single diode Manufacturer series: ZMY |
товару немає в наявності |
Мінімальне замовлення: 12000 шт В кошику од. на суму грн. | ||||||||||||||
| DG412LEDY-T1-GE3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch Type of integrated circuit: analog switch Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| DG412HSDY-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch Type of integrated circuit: analog switch Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||||||
| DG412LEDQ-GE3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch Type of integrated circuit: analog switch Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | |||||||||||||||
| DG412LEDY-GE3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch Type of integrated circuit: analog switch Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||||||
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SMAJ40CAHE3_A/I | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; bidirectional; DO214AC,SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Case: DO214AC; SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape Manufacturer series: SMAJ Technology: TransZorb® Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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VJ0805Y681KXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 100V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 100V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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VJ0805A681FXBAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±1%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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VJ0805A681GXAAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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VJ0805A681GXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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VJ0805A681GXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±2%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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VJ0805A681JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
| WR404140A2202J4100 | VISHAY |
Category: THT Resistors Description: Resistor: metal oxide; 22kΩ; THT; 2W; ±5%; 500V; Ø3.9x10mm; 1000pcs. Type of resistor: metal oxide Resistance: 22kΩ Mounting: THT Power: 2W Tolerance: ±5% Operating voltage: 500V Body dimensions: Ø3.9x10mm Temperature coefficient: 200ppm/°C Quantity in set/package: 1000pcs. Operating temperature: -55...200°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||
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BZT52B27-HE3_A-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 27V; SMD; SOD123; single diode; BZT52B Type of diode: Zener Power dissipation: 0.5W Zener voltage: 27V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Manufacturer series: BZT52B Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||
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BZT52B24-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: 7 inch reel Manufacturer series: BZT52B Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZT52B24-E3-18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: 13 inch reel Manufacturer series: BZT52B Manufacturer standard package: 10000pcs. |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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BZT52B24-G3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: 7 inch reel Manufacturer series: BZT52B Manufacturer standard package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZT52B24-G3-18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: 13 inch reel Manufacturer series: BZT52B Manufacturer standard package: 10000pcs. |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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BZT52B24-HE3_A-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Manufacturer series: BZT52B Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||
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BZT52B24-HE3_A-18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Manufacturer series: BZT52B Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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WSLT2512R0150FEB | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; 15mΩ; current shunt,sensing; SMD; 2512; 1W Type of resistor: metal strip Resistance: 15mΩ Kind of resistor: current shunt; sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Power: 1W Tolerance: ±1% Operating temperature: -65...275°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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WSL2512R0150FEA18 | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; 15mΩ; SMD; 2512; 2W; ±1%; -65÷170°C Type of resistor: metal strip Resistance: 15mΩ Mounting: SMD Case - inch: 2512 Power: 2W Tolerance: ±1% Operating temperature: -65...170°C |
на замовлення 6000 шт: термін постачання 14-30 дні (днів) |
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| SIS590DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100V; PowerPAK® 1212-8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100V Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||||||
| SQS965ELNW-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; PowerPAK® 1212-8 Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET x2 Case: PowerPAK® 1212-8 Mounting: SMD Polarisation: unipolar |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| SQS940ELNW-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; PowerPAK® 1212-8 Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET x2 Case: PowerPAK® 1212-8 Mounting: SMD Polarisation: unipolar Drain current: 6A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| SQS966ENW-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; PowerPAK® 1212-8 Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET x2 Case: PowerPAK® 1212-8 Mounting: SMD Polarisation: unipolar Drain current: 6A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| SIS9446DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 34A; Idm: 60A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 34A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 12mΩ Pulsed drain current: 60A Gate charge: 4.7nC Technology: TrenchFET® Gate-source voltage: -16...20V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||||||
| SI7232DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 25A; Idm: 40A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 25A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 24mΩ Pulsed drain current: 40A Power dissipation: 23W Gate charge: 32nC Technology: TrenchFET® Gate-source voltage: ±8V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| SI7223DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -6A; Idm: -40A Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6A Pulsed drain current: -40A Power dissipation: 23W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 37.2mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||||||
| SIS9122DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 5.7A; Idm: 8A; 11.4W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.7A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 167mΩ Pulsed drain current: 8A Power dissipation: 11.4W Gate charge: 6nC Gate-source voltage: ±20V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||||||
| SIS990DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 9.7A; Idm: 20A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.7A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 0.105Ω Pulsed drain current: 20A Power dissipation: 16W Gate charge: 8nC Technology: TrenchFET® Gate-source voltage: ±20V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SISF04DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 86A; Idm: 190A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 86A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement Semiconductor structure: common drain On-state resistance: 6mΩ Pulsed drain current: 190A Power dissipation: 44.4W Gate charge: 60nC Technology: TrenchFET® Gate-source voltage: -12...16V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||||||
| SISF00DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 60A; Idm: 120A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 7mΩ Pulsed drain current: 120A Power dissipation: 44.4W Gate charge: 53nC Technology: TrenchFET® Gate-source voltage: -16...20V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SISF02DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 60A; Idm: 140A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 25V Drain current: 60A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 5.6mΩ Pulsed drain current: 140A Power dissipation: 44.4W Gate charge: 56nC Technology: TrenchFET® Gate-source voltage: -12...16V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SQS944ENW-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 24A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Case: PowerPAK® 1212-8 On-state resistance: 25mΩ Mounting: SMD Pulsed drain current: 24A Power dissipation: 27.8W Gate charge: 7.6nC Polarisation: unipolar Technology: TrenchFET® Drain current: 6A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| SISB46DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 27.3A; Idm: 70A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 27.3A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 15.8mΩ Pulsed drain current: 70A Power dissipation: 14.8W Gate charge: 22nC Technology: TrenchFET® Gate-source voltage: -16...20V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SI7212DN-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.8A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 39mΩ Pulsed drain current: 20A Power dissipation: 2.6W Gate charge: 11nC Technology: TrenchFET® Gate-source voltage: ±12V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| SI7212DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.8A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 39mΩ Pulsed drain current: 20A Power dissipation: 2.6W Gate charge: 11nC Technology: TrenchFET® Gate-source voltage: ±12V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| SI7922DN-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 2.5A; Idm: 10A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.5A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 0.23Ω Pulsed drain current: 10A Power dissipation: 2.6W Gate charge: 8nC Technology: TrenchFET® Gate-source voltage: ±20V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| SI7922DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 2.5A; Idm: 10A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.5A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 0.23Ω Pulsed drain current: 10A Power dissipation: 2.6W Gate charge: 8nC Technology: TrenchFET® Gate-source voltage: ±20V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| SI7923DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -6.4A; 2.8W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.4A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 75mΩ Pulsed drain current: -20A Power dissipation: 2.8W Gate charge: 21nC Technology: TrenchFET® Gate-source voltage: ±20V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
 |
CRCW120622R0JNEAHP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 22Ω; SMD; 1206; 750mW; ±5%; 200V; -55÷155°C Type of resistor: thick film Resistance: 22Ω Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.75W Tolerance: ±5% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. Body dimensions: 3.1x1.6x0.5mm Roll diameter max.: 180mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
 |
B240A-E3/5AT | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 13 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 50A Kind of package: 13 inch reel Manufacturer standard package: 7500pcs. |
на замовлення 9226 шт: термін постачання 14-30 дні (днів) |
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 |
B240A-E3/61T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 50A Kind of package: 7 inch reel Manufacturer standard package: 1800pcs. |
на замовлення 1795 шт: термін постачання 14-30 дні (днів) |
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 |
B240A-M3/61T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 50A Leakage current: 0.5mA |
товару немає в наявності |
Мінімальне замовлення: 10800 шт В кошику од. на суму грн. | ||||||||||||||
|
|
B240A-M3/5AT | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 50A Leakage current: 0.5mA |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||
 |
GIB2404-M3/I | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 8A; 35ns; D2PAK,TO263AB; Ufmax: 975mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A Semiconductor structure: common cathode; double Case: D2PAK; TO263AB Max. forward voltage: 0.975V Max. forward impulse current: 125A Reverse recovery time: 35ns |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||||||
|
|
BZG03B240-M3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1.25W; 240V; SMD; DO214AC,SMA; 1uA Type of diode: Zener Mounting: SMD Case: DO214AC; SMA Max. forward voltage: 1.2V Leakage current: 1µA Tolerance: ±2% Power dissipation: 1.25W Zener voltage: 240V |
на замовлення 4500 шт: термін постачання 14-30 дні (днів) |
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VJ0805Y222JXAPW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 2.2nF; 50V; X7R; ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 2.2nF Operating voltage: 50V Dielectric: X7R Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||
|
|
VJ0805Y222JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 2.2nF; 50V; X7R; ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 2.2nF Operating voltage: 50V Dielectric: X7R Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| FEP16GT-E3/45 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 125A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 125A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 50ns
на замовлення 577 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 77.72 грн |
| 7+ | 67.92 грн |
| 10+ | 65.37 грн |
| 25+ | 62.83 грн |
| 50+ | 60.28 грн |
| 100+ | 58.58 грн |
| 500+ | 55.19 грн |
| GBU6J-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: tube
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: tube
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
товару немає в наявності
В кошику
од. на суму грн.
| GBU6J-E3/51 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: in-tray
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: in-tray
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
товару немає в наявності
В кошику
од. на суму грн.
| GBU6J-M3/51 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: in-tray
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: in-tray
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
товару немає в наявності
В кошику
од. на суму грн.
| MMA02040C6800FB300 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 680Ω; SMD; MiniMELF; 0204; 250mW; ±1%; 200V
Type of resistor: thin film
Resistance: 680Ω
Case - inch: 0204
Case - mm: 0510
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 50ppm/°C
Body dimensions: Ø1.4x3.6mm
Case: MiniMELF
Conform to the norm: AEC-Q200
Quantity in set/package: 3000pcs.
Diameter: 1.4mm
Mounting: SMD
Operating temperature: -55...155°C
Length: 3.6mm
Category: SMD resistors
Description: Resistor: thin film; 680Ω; SMD; MiniMELF; 0204; 250mW; ±1%; 200V
Type of resistor: thin film
Resistance: 680Ω
Case - inch: 0204
Case - mm: 0510
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 50ppm/°C
Body dimensions: Ø1.4x3.6mm
Case: MiniMELF
Conform to the norm: AEC-Q200
Quantity in set/package: 3000pcs.
Diameter: 1.4mm
Mounting: SMD
Operating temperature: -55...155°C
Length: 3.6mm
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 157+ | 2.93 грн |
| 250+ | 2.18 грн |
| 500+ | 1.88 грн |
| 1000+ | 1.67 грн |
| 1500+ | 1.56 грн |
| 3000+ | 1.43 грн |
| SMBJ100CA-E3/5B |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 3200 шт
В кошику
од. на суму грн.
| SMBJ100CA-M3/52 |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| SMBJ100CA-M3/5B |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 9600 шт
В кошику
од. на суму грн.
| SMCJ100CA-E3/57T |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
на замовлення 850 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.32 грн |
| 15+ | 29.21 грн |
| 100+ | 20.04 грн |
| 850+ | 14.69 грн |
| SMCJ100CA-E3/9AT |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; DO214AB,SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; DO214AB,SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| ZMY62-GS08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 62V; SMD; DO213AB,MELF glass; single diode; ZMY
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 62V
Mounting: SMD
Tolerance: ±5%
Case: DO213AB; MELF glass
Semiconductor structure: single diode
Manufacturer series: ZMY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 62V; SMD; DO213AB,MELF glass; single diode; ZMY
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 62V
Mounting: SMD
Tolerance: ±5%
Case: DO213AB; MELF glass
Semiconductor structure: single diode
Manufacturer series: ZMY
товару немає в наявності
Мінімальне замовлення: 12000 шт
В кошику
од. на суму грн.
| DG412LEDY-T1-GE3 |
|
Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DG412HSDY-E3 |
|
Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| DG412LEDQ-GE3 |
|
Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| DG412LEDY-GE3 |
|
Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
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Мінімальне замовлення: 500 шт
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| SMAJ40CAHE3_A/I |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMAJ
Technology: TransZorb®
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMAJ
Technology: TransZorb®
Application: automotive industry
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Мінімальне замовлення: 7500 шт
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| VJ0805Y681KXBCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
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Мінімальне замовлення: 4000 шт
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| VJ0805A681FXBAC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±1%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±1%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
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Мінімальне замовлення: 3000 шт
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| VJ0805A681GXAAC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
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Мінімальне замовлення: 3000 шт
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| VJ0805A681GXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
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Мінімальне замовлення: 4000 шт
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| VJ0805A681GXBCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
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Мінімальне замовлення: 4000 шт
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| VJ0805A681JXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
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Мінімальне замовлення: 4000 шт
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| WR404140A2202J4100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal oxide; 22kΩ; THT; 2W; ±5%; 500V; Ø3.9x10mm; 1000pcs.
Type of resistor: metal oxide
Resistance: 22kΩ
Mounting: THT
Power: 2W
Tolerance: ±5%
Operating voltage: 500V
Body dimensions: Ø3.9x10mm
Temperature coefficient: 200ppm/°C
Quantity in set/package: 1000pcs.
Operating temperature: -55...200°C
Category: THT Resistors
Description: Resistor: metal oxide; 22kΩ; THT; 2W; ±5%; 500V; Ø3.9x10mm; 1000pcs.
Type of resistor: metal oxide
Resistance: 22kΩ
Mounting: THT
Power: 2W
Tolerance: ±5%
Operating voltage: 500V
Body dimensions: Ø3.9x10mm
Temperature coefficient: 200ppm/°C
Quantity in set/package: 1000pcs.
Operating temperature: -55...200°C
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Мінімальне замовлення: 1000 шт
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| BZT52B27-HE3_A-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
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Мінімальне замовлення: 15000 шт
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| BZT52B24-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 7 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 7 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 3000pcs.
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| BZT52B24-E3-18 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 13 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 10000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 13 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 10000pcs.
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Мінімальне замовлення: 10000 шт
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| BZT52B24-G3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 7 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 7 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 3000pcs.
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| BZT52B24-G3-18 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 13 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 10000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 13 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 10000pcs.
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Мінімальне замовлення: 10000 шт
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| BZT52B24-HE3_A-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
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Мінімальне замовлення: 15000 шт
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| BZT52B24-HE3_A-18 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
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Мінімальне замовлення: 10000 шт
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| WSLT2512R0150FEB |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; 15mΩ; current shunt,sensing; SMD; 2512; 1W
Type of resistor: metal strip
Resistance: 15mΩ
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Power: 1W
Tolerance: ±1%
Operating temperature: -65...275°C
Category: SMD resistors
Description: Resistor: metal strip; 15mΩ; current shunt,sensing; SMD; 2512; 1W
Type of resistor: metal strip
Resistance: 15mΩ
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Power: 1W
Tolerance: ±1%
Operating temperature: -65...275°C
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Мінімальне замовлення: 1000 шт
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| WSL2512R0150FEA18 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; 15mΩ; SMD; 2512; 2W; ±1%; -65÷170°C
Type of resistor: metal strip
Resistance: 15mΩ
Mounting: SMD
Case - inch: 2512
Power: 2W
Tolerance: ±1%
Operating temperature: -65...170°C
Category: SMD resistors
Description: Resistor: metal strip; 15mΩ; SMD; 2512; 2W; ±1%; -65÷170°C
Type of resistor: metal strip
Resistance: 15mΩ
Mounting: SMD
Case - inch: 2512
Power: 2W
Tolerance: ±1%
Operating temperature: -65...170°C
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 20.66 грн |
| SIS590DN-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100V; PowerPAK® 1212-8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100V; PowerPAK® 1212-8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: reel; tape
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Мінімальне замовлення: 6000 шт
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| SQS965ELNW-T1_GE3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; PowerPAK® 1212-8
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Case: PowerPAK® 1212-8
Mounting: SMD
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; PowerPAK® 1212-8
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Case: PowerPAK® 1212-8
Mounting: SMD
Polarisation: unipolar
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Мінімальне замовлення: 3000 шт
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| SQS940ELNW-T1_GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; PowerPAK® 1212-8
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Case: PowerPAK® 1212-8
Mounting: SMD
Polarisation: unipolar
Drain current: 6A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; PowerPAK® 1212-8
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Case: PowerPAK® 1212-8
Mounting: SMD
Polarisation: unipolar
Drain current: 6A
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| SQS966ENW-T1_GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; PowerPAK® 1212-8
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Case: PowerPAK® 1212-8
Mounting: SMD
Polarisation: unipolar
Drain current: 6A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; PowerPAK® 1212-8
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Case: PowerPAK® 1212-8
Mounting: SMD
Polarisation: unipolar
Drain current: 6A
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Мінімальне замовлення: 3000 шт
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| SIS9446DN-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 34A; Idm: 60A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 34A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 12mΩ
Pulsed drain current: 60A
Gate charge: 4.7nC
Technology: TrenchFET®
Gate-source voltage: -16...20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 34A; Idm: 60A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 34A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 12mΩ
Pulsed drain current: 60A
Gate charge: 4.7nC
Technology: TrenchFET®
Gate-source voltage: -16...20V
Kind of package: reel; tape
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Мінімальне замовлення: 6000 шт
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| SI7232DN-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 25A; Idm: 40A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 25A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 24mΩ
Pulsed drain current: 40A
Power dissipation: 23W
Gate charge: 32nC
Technology: TrenchFET®
Gate-source voltage: ±8V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 25A; Idm: 40A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 25A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 24mΩ
Pulsed drain current: 40A
Power dissipation: 23W
Gate charge: 32nC
Technology: TrenchFET®
Gate-source voltage: ±8V
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| SI7223DN-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -6A; Idm: -40A
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -40A
Power dissipation: 23W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 37.2mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -6A; Idm: -40A
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -40A
Power dissipation: 23W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 37.2mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 6000 шт
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| SIS9122DN-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 5.7A; Idm: 8A; 11.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 167mΩ
Pulsed drain current: 8A
Power dissipation: 11.4W
Gate charge: 6nC
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 5.7A; Idm: 8A; 11.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 167mΩ
Pulsed drain current: 8A
Power dissipation: 11.4W
Gate charge: 6nC
Gate-source voltage: ±20V
Kind of package: reel; tape
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Мінімальне замовлення: 6000 шт
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| SIS990DN-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 9.7A; Idm: 20A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.105Ω
Pulsed drain current: 20A
Power dissipation: 16W
Gate charge: 8nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 9.7A; Idm: 20A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.105Ω
Pulsed drain current: 20A
Power dissipation: 16W
Gate charge: 8nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
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| SISF04DN-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 86A; Idm: 190A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
Semiconductor structure: common drain
On-state resistance: 6mΩ
Pulsed drain current: 190A
Power dissipation: 44.4W
Gate charge: 60nC
Technology: TrenchFET®
Gate-source voltage: -12...16V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 86A; Idm: 190A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
Semiconductor structure: common drain
On-state resistance: 6mΩ
Pulsed drain current: 190A
Power dissipation: 44.4W
Gate charge: 60nC
Technology: TrenchFET®
Gate-source voltage: -12...16V
Kind of package: reel; tape
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Мінімальне замовлення: 6000 шт
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| SISF00DN-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 60A; Idm: 120A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 7mΩ
Pulsed drain current: 120A
Power dissipation: 44.4W
Gate charge: 53nC
Technology: TrenchFET®
Gate-source voltage: -16...20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 60A; Idm: 120A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 7mΩ
Pulsed drain current: 120A
Power dissipation: 44.4W
Gate charge: 53nC
Technology: TrenchFET®
Gate-source voltage: -16...20V
Kind of package: reel; tape
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| SISF02DN-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 60A; Idm: 140A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5.6mΩ
Pulsed drain current: 140A
Power dissipation: 44.4W
Gate charge: 56nC
Technology: TrenchFET®
Gate-source voltage: -12...16V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 60A; Idm: 140A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5.6mΩ
Pulsed drain current: 140A
Power dissipation: 44.4W
Gate charge: 56nC
Technology: TrenchFET®
Gate-source voltage: -12...16V
Kind of package: reel; tape
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од. на суму грн.
| SQS944ENW-T1_GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 24A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: PowerPAK® 1212-8
On-state resistance: 25mΩ
Mounting: SMD
Pulsed drain current: 24A
Power dissipation: 27.8W
Gate charge: 7.6nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 6A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 24A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: PowerPAK® 1212-8
On-state resistance: 25mΩ
Mounting: SMD
Pulsed drain current: 24A
Power dissipation: 27.8W
Gate charge: 7.6nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 6A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SISB46DN-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 27.3A; Idm: 70A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.3A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 15.8mΩ
Pulsed drain current: 70A
Power dissipation: 14.8W
Gate charge: 22nC
Technology: TrenchFET®
Gate-source voltage: -16...20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 27.3A; Idm: 70A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.3A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 15.8mΩ
Pulsed drain current: 70A
Power dissipation: 14.8W
Gate charge: 22nC
Technology: TrenchFET®
Gate-source voltage: -16...20V
Kind of package: reel; tape
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В кошику
од. на суму грн.
| SI7212DN-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 39mΩ
Pulsed drain current: 20A
Power dissipation: 2.6W
Gate charge: 11nC
Technology: TrenchFET®
Gate-source voltage: ±12V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 39mΩ
Pulsed drain current: 20A
Power dissipation: 2.6W
Gate charge: 11nC
Technology: TrenchFET®
Gate-source voltage: ±12V
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI7212DN-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 39mΩ
Pulsed drain current: 20A
Power dissipation: 2.6W
Gate charge: 11nC
Technology: TrenchFET®
Gate-source voltage: ±12V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 39mΩ
Pulsed drain current: 20A
Power dissipation: 2.6W
Gate charge: 11nC
Technology: TrenchFET®
Gate-source voltage: ±12V
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI7922DN-T1-E3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 2.5A; Idm: 10A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.5A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.23Ω
Pulsed drain current: 10A
Power dissipation: 2.6W
Gate charge: 8nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 2.5A; Idm: 10A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.5A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.23Ω
Pulsed drain current: 10A
Power dissipation: 2.6W
Gate charge: 8nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI7922DN-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 2.5A; Idm: 10A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.5A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.23Ω
Pulsed drain current: 10A
Power dissipation: 2.6W
Gate charge: 8nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 2.5A; Idm: 10A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.5A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.23Ω
Pulsed drain current: 10A
Power dissipation: 2.6W
Gate charge: 8nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI7923DN-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -6.4A; 2.8W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 75mΩ
Pulsed drain current: -20A
Power dissipation: 2.8W
Gate charge: 21nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -6.4A; 2.8W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 75mΩ
Pulsed drain current: -20A
Power dissipation: 2.8W
Gate charge: 21nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| CRCW120622R0JNEAHP |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 22Ω; SMD; 1206; 750mW; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 22Ω
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.75W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 3.1x1.6x0.5mm
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: thick film; 22Ω; SMD; 1206; 750mW; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 22Ω
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.75W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 3.1x1.6x0.5mm
Roll diameter max.: 180mm
товару немає в наявності
Мінімальне замовлення: 5000 шт
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од. на суму грн.
| B240A-E3/5AT |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: 13 inch reel
Manufacturer standard package: 7500pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: 13 inch reel
Manufacturer standard package: 7500pcs.
на замовлення 9226 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.09 грн |
| 22+ | 19.36 грн |
| 100+ | 14.35 грн |
| 165+ | 5.86 грн |
| 453+ | 5.52 грн |
| B240A-E3/61T |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: 7 inch reel
Manufacturer standard package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Kind of package: 7 inch reel
Manufacturer standard package: 1800pcs.
на замовлення 1795 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 32.00 грн |
| 19+ | 22.75 грн |
| 22+ | 19.78 грн |
| 100+ | 12.65 грн |
| 183+ | 5.26 грн |
| 502+ | 5.01 грн |
| B240A-M3/61T |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Leakage current: 0.5mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Leakage current: 0.5mA
товару немає в наявності
Мінімальне замовлення: 10800 шт
В кошику
од. на суму грн.
| B240A-M3/5AT |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Leakage current: 0.5mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 50A
Leakage current: 0.5mA
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| GIB2404-M3/I |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 35ns; D2PAK,TO263AB; Ufmax: 975mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: common cathode; double
Case: D2PAK; TO263AB
Max. forward voltage: 0.975V
Max. forward impulse current: 125A
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 35ns; D2PAK,TO263AB; Ufmax: 975mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: common cathode; double
Case: D2PAK; TO263AB
Max. forward voltage: 0.975V
Max. forward impulse current: 125A
Reverse recovery time: 35ns
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.
| BZG03B240-M3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 240V; SMD; DO214AC,SMA; 1uA
Type of diode: Zener
Mounting: SMD
Case: DO214AC; SMA
Max. forward voltage: 1.2V
Leakage current: 1µA
Tolerance: ±2%
Power dissipation: 1.25W
Zener voltage: 240V
Category: SMD Zener diodes
Description: Diode: Zener; 1.25W; 240V; SMD; DO214AC,SMA; 1uA
Type of diode: Zener
Mounting: SMD
Case: DO214AC; SMA
Max. forward voltage: 1.2V
Leakage current: 1µA
Tolerance: ±2%
Power dissipation: 1.25W
Zener voltage: 240V
на замовлення 4500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 20.02 грн |
| VJ0805Y222JXAPW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2nF; 50V; X7R; ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 2.2nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2nF; 50V; X7R; ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 2.2nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| VJ0805Y222JXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2nF; 50V; X7R; ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 2.2nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 2.2nF; 50V; X7R; ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 2.2nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.