Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5870) > Сторінка 91 з 98
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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BTA208S-600F,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 25mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 2053 шт: термін постачання 14-30 дні (днів) |
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BTA208X-1000B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 1kV; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 1kV Max. load current: 8A Gate current: 50mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
на замовлення 810 шт: термін постачання 14-30 дні (днів) |
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BTA208X-1000C,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 1kV Max. load current: 8A Gate current: 35mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
на замовлення 238 шт: термін постачання 14-30 дні (днів) |
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Z0107NA,116 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Mounting: THT Max. forward impulse current: 8.5A Gate current: 7mA Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Max. off-state voltage: 0.8kV Max. load current: 1A Kind of package: reel; tape Case: TO92 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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Z0107NA,126 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Mounting: THT Max. forward impulse current: 8.5A Gate current: 7mA Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Max. off-state voltage: 0.8kV Max. load current: 1A Kind of package: Ammo Pack Case: TO92 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BT169G,112 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; bulk; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 0.8A Load current: 0.5A Gate current: 0.2mA Case: TO92 Mounting: THT Kind of package: bulk Max. forward impulse current: 8A Turn-on time: 2µs |
на замовлення 1924 шт: термін постачання 14-30 дні (днів) |
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BT169G,126 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ammo Pack Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 0.8A Load current: 0.5A Gate current: 50mA Case: TO92 Mounting: THT Kind of package: Ammo Pack Max. forward impulse current: 8A Turn-on time: 2µs |
на замовлення 147 шт: термін постачання 14-30 дні (днів) |
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BT169H,412 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; bulk; 2us Mounting: THT Case: TO92 Kind of package: bulk Gate current: 100µA Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.8kV Type of thyristor: thyristor Turn-on time: 2µs |
на замовлення 2565 шт: термін постачання 14-30 дні (днів) |
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BT169HML | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Gate current: 100µA Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.8kV Type of thyristor: thyristor Turn-on time: 2µs |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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ACT108W-800EF | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 800V; Ifmax: 0.8A; Igt: 10mA; SOT223; SMD Type of thyristor: AC switch Max. load current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 0.8kV Gate current: 10mA Features of semiconductor devices: internally triggered |
на замовлення 4213 шт: термін постачання 14-30 дні (днів) |
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BT151X-800R/DG,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT151X-500R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT258-800R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
на замовлення 312 шт: термін постачання 14-30 дні (днів) |
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SMBJ33AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36.98÷40.3V; 11.3A; unidirectional; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.98...40.3V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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BT137S-800E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 10/25mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA204W-800E,135 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 10mA Max. forward impulse current: 25A Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com |
на замовлення 3455 шт: термін постачання 14-30 дні (днів) |
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BTA204X-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220FP Gate current: 10mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||||||
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BT137S-600G,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 50/100mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 2284 шт: термін постачання 14-30 дні (днів) |
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BT136X-600F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220FP; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 25/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||||||
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BT137S-800F,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; DPAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 25/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 606 шт: термін постачання 14-30 дні (днів) |
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BT137S-800G,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 50/100mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 1713 шт: термін постачання 14-30 дні (днів) |
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BTA204W-800C,135 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: SOT223 Gate current: 35mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BTA204X-800C,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220FP Gate current: 35mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT151X-800R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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BT136X-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220FP Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 296 шт: термін постачання 14-30 дні (днів) |
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BTA208X-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 10mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 636 шт: термін постачання 14-30 дні (днів) |
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BTA208X-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220FP Gate current: 10mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 378 шт: термін постачання 14-30 дні (днів) |
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BT137-600.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT136-600 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 35/70mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 25A Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
| WG40N65DFJQ | WeEn Semiconductors |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 26W; SOT1293,TO3PF Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 26W Case: SOT1293; TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 173nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BT152B-1200TJ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; D2PAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 31A Load current: 20A Gate current: 35mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 250A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| WG50N65HFW1Q | WeEn Semiconductors |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 227W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 138nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BT136X-600E/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MAC97A8/DG,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 0.6A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT139-600-0TQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 50/100mA Max. forward impulse current: 155A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT139-600G0TQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 50/100mA Max. forward impulse current: 155A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT138-600-0TQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 50/100mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT138-600/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BTA204X-800C/L03Q | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220FP Gate current: 35mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BTA416X-800CTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 35mA Max. forward impulse current: 160A Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA410-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 10A Case: TO220AB Gate current: 50mA Mounting: THT Kind of package: tube Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA416X-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 160A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 50mA Mounting: THT Kind of package: tube Max. forward impulse current: 160A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BTA408X-1000C0T,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 1kV Max. load current: 8A Case: TO220FP Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BT134W-800EF | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 2A; SOT223; Igt: 10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 2A Case: SOT223 Gate current: 10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 3602 шт: термін постачання 14-30 дні (днів) |
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SMAJ5.0CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 6.45÷6.98V; 43.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.45...6.98V Max. forward impulse current: 43.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Leakage current: 0.4mA |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BT138Y-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 824 шт: термін постачання 14-30 дні (днів) |
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BT136-600D/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 5/10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT136-600/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT151-650LTFQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 5mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT151S-650SJ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 200uA; DPAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 0.2mA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 90A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| BT169D/DG,126 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 0.2mA Case: TO92 Mounting: THT Max. forward impulse current: 9A Quantity in set/package: 2000pcs. Turn-on time: 2µs Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT169G-L,412 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 0.8A Load current: 0.5A Gate current: 50mA Case: TO92 Mounting: THT Max. forward impulse current: 8A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT169G-MQP | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 0.8A Load current: 0.5A Gate current: 50mA Case: TO92 Mounting: THT Max. forward impulse current: 8A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT169G/DG,126 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 0.8A Load current: 0.5A Gate current: 50mA Case: TO92 Mounting: THT Max. forward impulse current: 8A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT169H-LML | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Gate current: 100µA Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.8kV Type of thyristor: thyristor Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BT169H/01U | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Gate current: 100µA Load current: 0.5A Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.8kV Type of thyristor: thyristor Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BT137-800G0TQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 50/100mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 950 шт: термін постачання 14-30 дні (днів) |
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| WNSC5D20650W6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 100A Kind of package: tube Max. load current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA445Z-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com Case: SOT1292; TO3P Mounting: THT Kind of package: tube Type of thyristor: triac Features of semiconductor devices: high temperature Technology: 3Q; Hi-Com Gate current: 50mA Max. load current: 45A Max. forward impulse current: 495A Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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WNSC5D20650X6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 2.2V Max. forward impulse current: 80A Kind of package: tube Max. load current: 40A |
на замовлення 801 шт: термін постачання 14-30 дні (днів) |
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| BTA208S-600F,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 25mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 2053 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.48 грн |
| 10+ | 45.27 грн |
| 100+ | 33.55 грн |
| 500+ | 26.69 грн |
| 1000+ | 26.61 грн |
| BTA208X-1000B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Gate current: 50mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Gate current: 50mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
на замовлення 810 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.38 грн |
| 25+ | 49.37 грн |
| 50+ | 44.94 грн |
| 100+ | 39.66 грн |
| 250+ | 32.80 грн |
| 500+ | 29.20 грн |
| BTA208X-1000C,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Gate current: 35mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Gate current: 35mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
на замовлення 238 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.67 грн |
| 12+ | 36.48 грн |
| 20+ | 32.80 грн |
| 100+ | 28.95 грн |
| Z0107NA,116 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 8.5A
Gate current: 7mA
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 1A
Kind of package: reel; tape
Case: TO92
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 8.5A
Gate current: 7mA
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 1A
Kind of package: reel; tape
Case: TO92
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| Z0107NA,126 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 8.5A
Gate current: 7mA
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 1A
Kind of package: Ammo Pack
Case: TO92
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Mounting: THT
Max. forward impulse current: 8.5A
Gate current: 7mA
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 1A
Kind of package: Ammo Pack
Case: TO92
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BT169G,112 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; bulk; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; bulk; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward impulse current: 8A
Turn-on time: 2µs
на замовлення 1924 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.03 грн |
| 27+ | 15.98 грн |
| 50+ | 11.58 грн |
| 100+ | 10.13 грн |
| 500+ | 7.52 грн |
| 1000+ | 6.67 грн |
| BT169G,126 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ammo Pack
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ammo Pack
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 8A
Turn-on time: 2µs
на замовлення 147 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.34 грн |
| 20+ | 21.92 грн |
| 24+ | 17.66 грн |
| 100+ | 8.70 грн |
| BT169H,412 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Gate current: 100µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Gate current: 100µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
на замовлення 2565 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11.35 грн |
| 58+ | 7.28 грн |
| 100+ | 6.61 грн |
| 500+ | 5.77 грн |
| 1000+ | 5.27 грн |
| BT169HML |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Gate current: 100µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Gate current: 100µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| ACT108W-800EF |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 0.8A; Igt: 10mA; SOT223; SMD
Type of thyristor: AC switch
Max. load current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.8kV
Gate current: 10mA
Features of semiconductor devices: internally triggered
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 0.8A; Igt: 10mA; SOT223; SMD
Type of thyristor: AC switch
Max. load current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 0.8kV
Gate current: 10mA
Features of semiconductor devices: internally triggered
на замовлення 4213 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.96 грн |
| 14+ | 30.54 грн |
| 50+ | 23.10 грн |
| 100+ | 20.42 грн |
| 250+ | 17.41 грн |
| 500+ | 15.40 грн |
| 1000+ | 13.64 грн |
| 2000+ | 12.13 грн |
| 4000+ | 11.30 грн |
| BT151X-800R/DG,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
товару немає в наявності
В кошику
од. на суму грн.
| BT151X-500R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
товару немає в наявності
В кошику
од. на суму грн.
| BT258-800R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
на замовлення 312 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 103.63 грн |
| 10+ | 61.50 грн |
| 50+ | 46.36 грн |
| 100+ | 41.84 грн |
| SMBJ33AJ |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36.98÷40.3V; 11.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36.98÷40.3V; 11.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| BT137S-800E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BTA204W-800E,135 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
на замовлення 3455 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 38.75 грн |
| 100+ | 22.26 грн |
| 500+ | 18.41 грн |
| 1000+ | 16.99 грн |
| 2000+ | 15.98 грн |
| BTA204X-800E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| BT137S-600G,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 2284 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.21 грн |
| 25+ | 23.76 грн |
| 100+ | 20.92 грн |
| 500+ | 18.83 грн |
| BT136X-600F,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| BT137S-800F,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 25/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 25/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 606 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.09 грн |
| 25+ | 25.94 грн |
| 100+ | 22.93 грн |
| 500+ | 20.58 грн |
| BT137S-800G,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 1713 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 84.71 грн |
| 10+ | 49.54 грн |
| 100+ | 33.05 грн |
| 250+ | 28.53 грн |
| 500+ | 25.69 грн |
| 1000+ | 23.26 грн |
| BTA204W-800C,135 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: SOT223
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: SOT223
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| BTA204X-800C,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BT151X-800R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.07 грн |
| 12+ | 35.31 грн |
| 50+ | 30.04 грн |
| 100+ | 28.53 грн |
| 500+ | 25.52 грн |
| 1000+ | 24.10 грн |
| BT136X-800E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 296 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.85 грн |
| 14+ | 31.97 грн |
| 50+ | 26.69 грн |
| 100+ | 24.18 грн |
| 250+ | 21.17 грн |
| BTA208X-600E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 636 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.82 грн |
| 10+ | 54.64 грн |
| 50+ | 41.59 грн |
| 100+ | 37.24 грн |
| 500+ | 29.12 грн |
| BTA208X-800E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 378 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.26 грн |
| 13+ | 34.81 грн |
| 25+ | 31.55 грн |
| 100+ | 27.70 грн |
| 250+ | 25.61 грн |
| BT137-600.127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BT136-600 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| WG40N65DFJQ |
Виробник: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 26W; SOT1293,TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 26W
Case: SOT1293; TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 173nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 26W; SOT1293,TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 26W
Case: SOT1293; TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 173nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.
| BT152B-1200TJ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 35mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 250A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 35mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 250A
Turn-on time: 2µs
товару немає в наявності
В кошику
од. на суму грн.
| WG50N65HFW1Q |
Виробник: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.
| BT136X-600E/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| MAC97A8/DG,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| BT139-600-0TQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BT139-600G0TQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BT138-600-0TQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BT138-600/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BTA204X-800C/L03Q |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BTA416X-800CTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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| BTA410-800BT,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
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| BTA416X-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 160A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 160A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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| BTA408X-1000C0T,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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| BT134W-800EF |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 2A; SOT223; Igt: 10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 2A; SOT223; Igt: 10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 2A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 3602 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.07 грн |
| 16+ | 27.28 грн |
| 100+ | 16.32 грн |
| 250+ | 14.64 грн |
| 500+ | 13.05 грн |
| 1000+ | 11.71 грн |
| SMAJ5.0CAJ |
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Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.45÷6.98V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.45...6.98V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Leakage current: 0.4mA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.45÷6.98V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.45...6.98V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Leakage current: 0.4mA
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| BT138Y-800E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 824 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.67 грн |
| 11+ | 39.66 грн |
| 50+ | 35.31 грн |
| 250+ | 31.71 грн |
| 500+ | 29.62 грн |
| BT136-600D/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BT136-600/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BT151-650LTFQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
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| BT151S-650SJ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 200uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 0.2mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 90A
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 200uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 0.2mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 90A
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| BT169D/DG,126 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Max. forward impulse current: 9A
Quantity in set/package: 2000pcs.
Turn-on time: 2µs
Kind of package: Ammo Pack
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Max. forward impulse current: 9A
Quantity in set/package: 2000pcs.
Turn-on time: 2µs
Kind of package: Ammo Pack
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| BT169G-L,412 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
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| BT169G-MQP |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
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| BT169G/DG,126 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Case: TO92
Mounting: THT
Max. forward impulse current: 8A
Turn-on time: 2µs
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| BT169H-LML |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Gate current: 100µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Gate current: 100µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
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| BT169H/01U |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Gate current: 100µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Gate current: 100µA
Load current: 0.5A
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Type of thyristor: thyristor
Turn-on time: 2µs
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| BT137-800G0TQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 950 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 56.77 грн |
| 13+ | 34.14 грн |
| 50+ | 29.87 грн |
| 250+ | 25.77 грн |
| 500+ | 24.10 грн |
| WNSC5D20650W6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 100A
Kind of package: tube
Max. load current: 40A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 100A
Kind of package: tube
Max. load current: 40A
товару немає в наявності
В кошику
од. на суму грн.
| BTA445Z-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Features of semiconductor devices: high temperature
Technology: 3Q; Hi-Com
Gate current: 50mA
Max. load current: 45A
Max. forward impulse current: 495A
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику
од. на суму грн.
| WNSC5D20650X6Q |
![]() |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 40A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 40A
на замовлення 801 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 169.42 грн |
| 5+ | 140.58 грн |
| 25+ | 124.68 грн |
| 100+ | 112.13 грн |




















