Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5620) > Сторінка 91 з 94
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| BTA212B-600B,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BTA212B-600D,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 5mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BTA212B-600F,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 25mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BTA212X-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BTA212X-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 10mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BTA212X-600F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 25mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BT150-500R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 4A Load current: 2.5A Gate current: 15µA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 35A Turn-on time: 2µs |
на замовлення 945 шт: термін постачання 14-30 дні (днів) |
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SMBJ20AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 22.41÷24.28V; 18.6A; unidirectional; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.41...24.28V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 490 шт: термін постачання 14-30 дні (днів) |
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BTA140-800.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 190A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTA212B-800B,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: D2PAK Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| Z0109NA0,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 13.8A Mounting: THT Kind of package: bulk Technology: 4Q Features of semiconductor devices: logic level; sensitive gate |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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| Z0109MA,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Mounting: THT Kind of package: reel; tape Technology: 4Q Features of semiconductor devices: logic level; sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| Z0109MA0,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 13.8A Mounting: THT Kind of package: bulk Technology: 4Q Features of semiconductor devices: logic level; sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| Z0109NA,116 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Mounting: THT Kind of package: reel; tape Technology: 4Q Features of semiconductor devices: logic level; sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| Z0109NA,126 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Mounting: THT Kind of package: Ammo Pack Technology: 4Q Features of semiconductor devices: logic level; sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| Z0109NA,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Mounting: THT Kind of package: bulk Technology: 4Q Features of semiconductor devices: logic level; sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TYN16X-600CT,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 16A Load current: 10.2A Gate current: 15mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 180A Turn-on time: 2µs |
на замовлення 177 шт: термін постачання 14-30 дні (днів) |
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| TYN16-600RTQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 16A Load current: 10.2A Gate current: 25mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 231A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TYN16-600CT,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 16A Load current: 10.2A Gate current: 15mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 198A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TYN16-800RTQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 16A Load current: 10.2A Gate current: 25mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 231A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TYN16S-600CTJ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 6mA; DPAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 16A Load current: 10.2A Gate current: 6mA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 180A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TYN16X-600RT,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 16A Load current: 10.2A Gate current: 25mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 231A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TYN16X-800RT,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 16A Load current: 10.2A Gate current: 25mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 231A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BYV10X-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 88A; SOD113,TO220FP-2 Type of diode: rectifying Case: SOD113; TO220FP-2 Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.6V Max. forward impulse current: 88A Kind of package: tube Reverse recovery time: 50ns |
на замовлення 381 шт: термін постачання 14-30 дні (днів) |
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BYV410X-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; Ufmax: 1.3V Type of diode: rectifying Case: SOD113; TO220FP-2 Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 1.3V Max. forward impulse current: 120A Kind of package: tube Features of semiconductor devices: ultrafast switching Reverse recovery time: 35ns Max. load current: 20A |
на замовлення 552 шт: термін постачання 14-30 дні (днів) |
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BYV410X-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V Type of diode: rectifying Case: SOD113; TO220FP-2 Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 1.3V Max. forward impulse current: 137A Kind of package: tube Features of semiconductor devices: ultrafast switching Reverse recovery time: 20ns Max. load current: 20A |
на замовлення 953 шт: термін постачання 14-30 дні (днів) |
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BYV10-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; SOD59,TO220AC Type of diode: rectifying Case: SOD59; TO220AC Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 80A Kind of package: tube Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BYV10D-600PJ | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 10A; 100ns; DPAK; Ufmax: 1.3V Type of diode: rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.3V Max. forward impulse current: 120A Kind of package: reel; tape Reverse recovery time: 100ns Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BYV10ED-600PJ | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 2V; Ifsm: 70A Type of diode: rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 2V Max. forward impulse current: 70A Kind of package: reel; tape Reverse recovery time: 50ns Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BYV10EX-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 75A; SOD113,TO220FP-2 Type of diode: rectifying Case: SOD113; TO220FP-2 Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 75A Kind of package: tube Reverse recovery time: 50ns Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BYV410-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB Type of diode: rectifying Case: SOT78; TO220AB Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 1.3V Max. forward impulse current: 132A Kind of package: tube Features of semiconductor devices: ultrafast switching Reverse recovery time: 35ns Heatsink thickness: 1.25...1.4mm Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BYV410X-600/L01Q | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; Ufmax: 1.3V Type of diode: rectifying Case: SOD113; TO220FP-2 Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 1.3V Max. forward impulse current: 132A Kind of package: tube Features of semiconductor devices: ultrafast switching Reverse recovery time: 35ns Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTA316-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1028 шт: термін постачання 14-30 дні (днів) |
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BTA316X-800B0,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Type of thyristor: triac Gate current: 50mA Max. load current: 16A Max. forward impulse current: 140A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
на замовлення 1683 шт: термін постачання 14-30 дні (днів) |
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BTA316-800B0,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 657 шт: термін постачання 14-30 дні (днів) |
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BTA316X-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 995 шт: термін постачання 14-30 дні (днів) |
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BTA316-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1404 шт: термін постачання 14-30 дні (днів) |
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BTA316-600D,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 5mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 662 шт: термін постачання 14-30 дні (днів) |
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BTA216X-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 50mA Technology: 3Q; Hi-Com Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Max. forward impulse current: 190A |
на замовлення 420 шт: термін постачання 14-30 дні (днів) |
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BTA316-800C,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 35mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 910 шт: термін постачання 14-30 дні (днів) |
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BTA316Y-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Type of thyristor: triac Gate current: 50mA Max. load current: 16A Max. forward impulse current: 140A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate |
на замовлення 1038 шт: термін постачання 14-30 дні (днів) |
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BTA316B-800C,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Case: D2PAK Mounting: SMD Kind of package: reel; tape Type of thyristor: triac Gate current: 35mA Max. load current: 16A Max. forward impulse current: 140A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
на замовлення 809 шт: термін постачання 14-30 дні (днів) |
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BTA316Y-800CTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220AB Mounting: THT Kind of package: tube Type of thyristor: triac Gate current: 35mA Max. load current: 16A Max. forward impulse current: 140A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate |
на замовлення 549 шт: термін постачання 14-30 дні (днів) |
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BTA316B-600C,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Gate current: 35mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 704 шт: термін постачання 14-30 дні (днів) |
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BTA316X-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 191 шт: термін постачання 14-30 дні (днів) |
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BTA216B-800B,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: D2PAK Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 590 шт: термін постачання 14-30 дні (днів) |
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BTA216X-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 837 шт: термін постачання 14-30 дні (днів) |
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BTA316-600ET,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 158 шт: термін постачання 14-30 дні (днів) |
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BTA316-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 31 шт: термін постачання 14-30 дні (днів) |
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BYT79X-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 165A; Ufmax: 1.25V Case: SOD113; TO220FP-2 Mounting: THT Kind of package: tube Type of diode: rectifying Reverse recovery time: 60ns Max. forward voltage: 1.25V Load current: 15A Max. off-state voltage: 0.6kV Max. forward impulse current: 165A Semiconductor structure: single diode |
на замовлення 990 шт: термін постачання 14-30 дні (днів) |
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BT138X-800F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220FP Gate current: 25/70mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTA316X-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220FP Mounting: THT Kind of package: tube Type of thyristor: triac Gate current: 50mA Max. load current: 16A Max. forward impulse current: 140A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
на замовлення 298 шт: термін постачання 14-30 дні (днів) |
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BTA316B-800B,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Case: D2PAK Mounting: SMD Kind of package: reel; tape Type of thyristor: triac Gate current: 50mA Max. load current: 16A Max. forward impulse current: 140A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ACT108-800EQP | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 800V; Ifmax: 0.8A; Igt: 10mA; TO92; THT Type of thyristor: AC switch Max. load current: 0.8A Case: TO92 Mounting: THT Kind of package: reel; tape Gate current: 10mA Max. off-state voltage: 0.8kV Features of semiconductor devices: internally triggered |
на замовлення 9244 шт: термін постачання 14-30 дні (днів) |
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BT148W-600R,115 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 1A; 0.6A; Igt: 50uA; SOT223; SMD; reel,tape Mounting: SMD Type of thyristor: thyristor Turn-on time: 2µs Gate current: 50µA Load current: 0.6A Max. forward impulse current: 10A Max. load current: 1A Max. off-state voltage: 0.6kV Kind of package: reel; tape Case: SOT223 |
на замовлення 2013 шт: термін постачання 14-30 дні (днів) |
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BT139-600.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 35/70mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 155A Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| WSJM65R170XQ | WeEn Semiconductors |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 14A Pulsed drain current: 72A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PHD13005,127 | WeEn Semiconductors |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 4A Power dissipation: 75W Case: TO220AB Current gain: 10...40 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BYQ28ED-200,118 | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V Mounting: SMD Case: DPAK Max. forward voltage: 1.25V Load current: 5A x2 Max. load current: 10A Max. forward impulse current: 55A Max. off-state voltage: 200V Semiconductor structure: common cathode; double Type of diode: rectifying Kind of package: reel; tape Features of semiconductor devices: ultrafast switching Reverse recovery time: 25ns |
на замовлення 1462 шт: термін постачання 14-30 дні (днів) |
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BYW29ED-200,118 | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 80A Case: DPAK Max. forward voltage: 0.8V Reverse recovery time: 25ns |
на замовлення 739 шт: термін постачання 14-30 дні (днів) |
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| BTA212B-600B,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BTA212B-600D,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BTA212B-600F,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BTA212X-600B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA212X-600E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA212X-600F,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BT150-500R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 35A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 35A
Turn-on time: 2µs
на замовлення 945 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 72.47 грн |
| 10+ | 42.06 грн |
| 50+ | 30.96 грн |
| 100+ | 27.67 грн |
| 500+ | 22.12 грн |
| SMBJ20AJ |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.41÷24.28V; 18.6A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.41÷24.28V; 18.6A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 490 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.87 грн |
| 70+ | 6.06 грн |
| 100+ | 5.38 грн |
| BTA140-800.127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35/70mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 190A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA212B-800B,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| Z0109NA0,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 19.02 грн |
| 30+ | 14.38 грн |
| 100+ | 10.94 грн |
| 250+ | 9.67 грн |
| 1000+ | 8.24 грн |
| Z0109MA,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Mounting: THT
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Mounting: THT
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
товару немає в наявності
В кошику
од. на суму грн.
| Z0109MA0,412 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
товару немає в наявності
В кошику
од. на суму грн.
| Z0109NA,116 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Mounting: THT
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Mounting: THT
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
товару немає в наявності
В кошику
од. на суму грн.
| Z0109NA,126 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Mounting: THT
Kind of package: Ammo Pack
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Mounting: THT
Kind of package: Ammo Pack
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
товару немає в наявності
В кошику
од. на суму грн.
| Z0109NA,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
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| TYN16X-600CT,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 180A
Turn-on time: 2µs
на замовлення 177 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.11 грн |
| 25+ | 30.11 грн |
| 50+ | 23.64 грн |
| 100+ | 18.25 грн |
| TYN16-600RTQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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| TYN16-600CT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 198A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 15mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 15mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 198A
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| TYN16-800RTQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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| TYN16S-600CTJ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 6mA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 6mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 180A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 6mA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 6mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 180A
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| TYN16X-600RT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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| TYN16X-800RT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 16A; 10.2A; Igt: 25mA; TO220FP; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 16A
Load current: 10.2A
Gate current: 25mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 231A
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| BYV10X-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 88A
Kind of package: tube
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 88A
Kind of package: tube
Reverse recovery time: 50ns
на замовлення 381 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.07 грн |
| 12+ | 36.51 грн |
| 50+ | 31.04 грн |
| 100+ | 28.85 грн |
| BYV410X-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; Ufmax: 1.3V
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 1.3V
Max. forward impulse current: 120A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 35ns
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 120A; Ufmax: 1.3V
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 1.3V
Max. forward impulse current: 120A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 35ns
Max. load current: 20A
на замовлення 552 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.60 грн |
| 9+ | 51.48 грн |
| 25+ | 45.09 грн |
| 100+ | 41.55 грн |
| BYV410X-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 1.3V
Max. forward impulse current: 137A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 20ns
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 137A; Ufmax: 1.3V
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 1.3V
Max. forward impulse current: 137A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 20ns
Max. load current: 20A
на замовлення 953 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.62 грн |
| 7+ | 67.29 грн |
| 25+ | 60.56 грн |
| 100+ | 53.84 грн |
| 500+ | 52.99 грн |
| BYV10-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; SOD59,TO220AC
Type of diode: rectifying
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; SOD59,TO220AC
Type of diode: rectifying
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
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| BYV10D-600PJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 100ns; DPAK; Ufmax: 1.3V
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Max. forward impulse current: 120A
Kind of package: reel; tape
Reverse recovery time: 100ns
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 100ns; DPAK; Ufmax: 1.3V
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Max. forward impulse current: 120A
Kind of package: reel; tape
Reverse recovery time: 100ns
Features of semiconductor devices: ultrafast switching
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| BYV10ED-600PJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 2V; Ifsm: 70A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 70A
Kind of package: reel; tape
Reverse recovery time: 50ns
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 2V; Ifsm: 70A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 70A
Kind of package: reel; tape
Reverse recovery time: 50ns
Features of semiconductor devices: ultrafast switching
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| BYV10EX-600PQ |
![]() |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 75A; SOD113,TO220FP-2
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Kind of package: tube
Reverse recovery time: 50ns
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 75A; SOD113,TO220FP-2
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Kind of package: tube
Reverse recovery time: 50ns
Features of semiconductor devices: ultrafast switching
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| BYV410-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB
Type of diode: rectifying
Case: SOT78; TO220AB
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 1.3V
Max. forward impulse current: 132A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 35ns
Heatsink thickness: 1.25...1.4mm
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; SOT78,TO220AB
Type of diode: rectifying
Case: SOT78; TO220AB
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 1.3V
Max. forward impulse current: 132A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 35ns
Heatsink thickness: 1.25...1.4mm
Max. load current: 20A
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| BYV410X-600/L01Q |
![]() |
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; Ufmax: 1.3V
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 1.3V
Max. forward impulse current: 132A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 35ns
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 132A; Ufmax: 1.3V
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 1.3V
Max. forward impulse current: 132A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 35ns
Max. load current: 20A
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| BTA316-800B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1028 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 100.55 грн |
| 10+ | 59.39 грн |
| 50+ | 47.11 грн |
| 100+ | 41.97 грн |
| 500+ | 30.11 грн |
| 1000+ | 27.42 грн |
| BTA316X-800B0,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
на замовлення 1683 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.64 грн |
| 10+ | 43.15 грн |
| 12+ | 38.19 грн |
| 30+ | 37.35 грн |
| BTA316-800B0,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 657 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.07 грн |
| 10+ | 45.93 грн |
| 25+ | 40.38 грн |
| 100+ | 37.35 грн |
| BTA316X-600B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 995 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.79 грн |
| 10+ | 43.07 грн |
| 25+ | 37.85 грн |
| 100+ | 31.80 грн |
| 250+ | 30.53 грн |
| BTA316-800E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1404 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.00 грн |
| 10+ | 48.87 грн |
| 50+ | 42.14 грн |
| 100+ | 39.54 грн |
| 500+ | 33.90 грн |
| 1000+ | 33.65 грн |
| BTA316-600D,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 662 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.07 грн |
| 10+ | 43.07 грн |
| 25+ | 37.85 грн |
| 100+ | 34.07 грн |
| 500+ | 31.80 грн |
| BTA216X-800B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
на замовлення 420 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.07 грн |
| 9+ | 49.12 грн |
| 25+ | 45.42 грн |
| 100+ | 40.88 грн |
| BTA316-800C,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 910 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 99.65 грн |
| 6+ | 82.44 грн |
| 25+ | 73.18 грн |
| 100+ | 65.61 грн |
| BTA316Y-800BTQ |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
на замовлення 1038 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.73 грн |
| 11+ | 40.38 грн |
| 12+ | 35.67 грн |
| 50+ | 34.91 грн |
| BTA316B-800C,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
на замовлення 809 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 122.29 грн |
| 10+ | 73.77 грн |
| 25+ | 64.43 грн |
| 100+ | 51.31 грн |
| 250+ | 43.15 грн |
| BTA316Y-800CTQ |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
на замовлення 549 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.73 грн |
| 12+ | 35.25 грн |
| BTA316B-600C,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 704 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 92.40 грн |
| 10+ | 60.31 грн |
| 100+ | 46.60 грн |
| 400+ | 40.46 грн |
| BTA316X-600E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 191 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.07 грн |
| 10+ | 43.91 грн |
| 25+ | 35.58 грн |
| 100+ | 31.80 грн |
| BTA216B-800B,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 590 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 117.76 грн |
| 10+ | 72.26 грн |
| 100+ | 50.72 грн |
| 500+ | 36.68 грн |
| BTA216X-600B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 837 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.09 грн |
| 10+ | 58.46 грн |
| 100+ | 48.87 грн |
| 250+ | 45.00 грн |
| 500+ | 42.23 грн |
| BTA316-600ET,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 158 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 98.74 грн |
| 10+ | 53.75 грн |
| 50+ | 43.74 грн |
| 100+ | 39.62 грн |
| BTA316-600B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 31 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.53 грн |
| 10+ | 44.50 грн |
| BYT79X-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 165A; Ufmax: 1.25V
Case: SOD113; TO220FP-2
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 60ns
Max. forward voltage: 1.25V
Load current: 15A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 165A
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 165A; Ufmax: 1.25V
Case: SOD113; TO220FP-2
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 60ns
Max. forward voltage: 1.25V
Load current: 15A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 165A
Semiconductor structure: single diode
на замовлення 990 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.62 грн |
| 11+ | 40.38 грн |
| 50+ | 35.75 грн |
| BT138X-800F,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA316X-800B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
на замовлення 298 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.07 грн |
| 9+ | 47.69 грн |
| 10+ | 42.23 грн |
| 30+ | 37.94 грн |
| 100+ | 35.75 грн |
| BTA316B-800B,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 50mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
товару немає в наявності
В кошику
од. на суму грн.
| ACT108-800EQP |
![]() |
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 0.8A; Igt: 10mA; TO92; THT
Type of thyristor: AC switch
Max. load current: 0.8A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Gate current: 10mA
Max. off-state voltage: 0.8kV
Features of semiconductor devices: internally triggered
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 0.8A; Igt: 10mA; TO92; THT
Type of thyristor: AC switch
Max. load current: 0.8A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Gate current: 10mA
Max. off-state voltage: 0.8kV
Features of semiconductor devices: internally triggered
на замовлення 9244 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.79 грн |
| 16+ | 27.59 грн |
| 25+ | 16.82 грн |
| 100+ | 14.89 грн |
| 500+ | 13.29 грн |
| 2000+ | 12.45 грн |
| BT148W-600R,115 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.6A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.6A
Max. forward impulse current: 10A
Max. load current: 1A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: SOT223
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.6A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 50µA
Load current: 0.6A
Max. forward impulse current: 10A
Max. load current: 1A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Case: SOT223
на замовлення 2013 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.45 грн |
| 14+ | 31.88 грн |
| 50+ | 24.06 грн |
| 100+ | 21.37 грн |
| 200+ | 18.93 грн |
| 500+ | 16.15 грн |
| 1000+ | 14.22 грн |
| 2000+ | 12.53 грн |
| BT139-600.127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
товару немає в наявності
В кошику
од. на суму грн.
| WSJM65R170XQ |
![]() |
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 72A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Pulsed drain current: 72A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PHD13005,127 |
![]() |
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 75W
Case: TO220AB
Current gain: 10...40
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 4A
Power dissipation: 75W
Case: TO220AB
Current gain: 10...40
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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| BYQ28ED-200,118 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Mounting: SMD
Case: DPAK
Max. forward voltage: 1.25V
Load current: 5A x2
Max. load current: 10A
Max. forward impulse current: 55A
Max. off-state voltage: 200V
Semiconductor structure: common cathode; double
Type of diode: rectifying
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5Ax2; 25ns; DPAK; Ufmax: 1.25V
Mounting: SMD
Case: DPAK
Max. forward voltage: 1.25V
Load current: 5A x2
Max. load current: 10A
Max. forward impulse current: 55A
Max. off-state voltage: 200V
Semiconductor structure: common cathode; double
Type of diode: rectifying
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
на замовлення 1462 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.29 грн |
| 12+ | 36.51 грн |
| 100+ | 28.10 грн |
| 500+ | 22.71 грн |
| 1000+ | 21.70 грн |
| BYW29ED-200,118 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 80A
Case: DPAK
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 80A
Case: DPAK
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
на замовлення 739 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.79 грн |
| 11+ | 41.72 грн |
| 100+ | 31.80 грн |
| 500+ | 26.67 грн |














