Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5754) > Сторінка 91 з 96
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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| Z0103NA,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 5mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| Z0103NA0,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 5mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| Z0103NA0QP | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 5mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||
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BT258-600R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 8A Load current: 5A Gate current: 50µA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 75A Turn-on time: 2µs |
на замовлення 1111 шт: термін постачання 14-30 дні (днів) |
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BYV32E-200,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 137A Case: SOT78; TO220AB Max. forward voltage: 0.72V Max. load current: 20A Heatsink thickness: 1.25...1.4mm Reverse recovery time: 25ns |
на замовлення 2752 шт: термін постачання 14-30 дні (днів) |
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BYV32E-100,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 137A Case: SOT78; TO220AB Max. forward voltage: 0.85V Max. load current: 20A Reverse recovery time: 25ns Heatsink thickness: 1.25...1.4mm |
на замовлення 586 шт: термін постачання 14-30 дні (днів) |
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BYV32E-150,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 137A Case: SOT78; TO220AB Max. forward voltage: 0.85V Max. load current: 20A Reverse recovery time: 25ns Heatsink thickness: 1.25...1.4mm |
на замовлення 200 шт: термін постачання 14-30 дні (днів) |
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| BYV32E-200PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 125A Case: SOT78; TO220AB Max. forward voltage: 0.85V Max. load current: 20A Heatsink thickness: 1.25...1.4mm Reverse recovery time: 18ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BYV32E-300PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 220A Case: SOT78; TO220AB Max. forward voltage: 1.25V Max. load current: 20A Reverse recovery time: 25ns Heatsink thickness: 1.25...1.4mm |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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BYV32EB-200PJ | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 125A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Reverse recovery time: 25ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: D2PAK; SOT404 Max. forward voltage: 0.85V Max. load current: 20A Max. forward impulse current: 125A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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BYV32EB-300PJ | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 10A x2 Reverse recovery time: 25ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: D2PAK; SOT404 Max. forward voltage: 1.25V Max. load current: 20A Max. forward impulse current: 220A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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BYV32EX-300PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 220A Case: SOD113; TO220FP-2 Max. forward voltage: 1.25V Max. load current: 20A Reverse recovery time: 25ns |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
| MCR100W-10MF | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape Mounting: SMD Max. off-state voltage: 1kV Load current: 0.8A Case: SOT223 Max. forward impulse current: 23A Kind of package: reel; tape Max. load current: 1.25A Gate current: 90µA Type of thyristor: thyristor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BT149G,126 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 0.8A Case: TO92 Gate current: 0.2mA Max. forward impulse current: 8A Mounting: THT Kind of package: Ammo Pack Turn-on time: 2µs Load current: 0.5A |
на замовлення 9630 шт: термін постачання 14-30 дні (днів) |
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BT149D,112 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; bulk; 2us Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Case: TO92 Gate current: 0.2mA Max. forward impulse current: 8A Mounting: THT Kind of package: bulk Turn-on time: 2µs Load current: 0.5A |
на замовлення 4977 шт: термін постачання 14-30 дні (днів) |
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BT149D,126 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 0.2mA Case: TO92 Mounting: THT Kind of package: Ammo Pack Max. forward impulse current: 8A Turn-on time: 2µs |
на замовлення 355 шт: термін постачання 14-30 дні (днів) |
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| BT149G,412 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; bulk; 2us Case: TO92 Mounting: THT Kind of package: bulk Type of thyristor: thyristor Turn-on time: 2µs Gate current: 0.2mA Load current: 0.5A Max. load current: 0.8A Max. off-state voltage: 0.6kV Max. forward impulse current: 9A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BTA212-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 95A Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com |
на замовлення 4450 шт: термін постачання 14-30 дні (днів) |
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BTA212-600B/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 792 шт: термін постачання 14-30 дні (днів) |
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BTA212X-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220FP Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 570 шт: термін постачання 14-30 дні (днів) |
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BTA212-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 10mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 708 шт: термін постачання 14-30 дні (днів) |
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BTA212X-600D,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 5mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 525 шт: термін постачання 14-30 дні (днів) |
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BTA212B-600E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 10mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 622 шт: термін постачання 14-30 дні (днів) |
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BTA212B-800E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: D2PAK Gate current: 10mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 573 шт: термін постачання 14-30 дні (днів) |
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BTA212-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTA212-600D,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 5mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BTA212X-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220FP Gate current: 10mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BTA212-600F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 25mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BTA212B-600B,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BTA212B-600D,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 5mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BTA212B-600F,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 25mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BTA212X-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BTA212X-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 10mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BTA212X-600F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220FP Gate current: 25mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BT150-500R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; TO220AB; THT; tube; 2us Turn-on time: 2µs Gate current: 15µA Load current: 2.5A Max. load current: 4A Max. forward impulse current: 35A Max. off-state voltage: 500V Kind of package: tube Case: TO220AB Mounting: THT Type of thyristor: thyristor |
на замовлення 340 шт: термін постачання 14-30 дні (днів) |
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SMBJ20AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 22.41÷24.28V; 18.6A; unidirectional; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.41...24.28V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel; tape |
на замовлення 490 шт: термін постачання 14-30 дні (днів) |
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BTA212B-800B,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: D2PAK Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5600 шт В кошику од. на суму грн. | ||||||||||||||
| Z0109NA0,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 13.8A Mounting: THT Kind of package: bulk Technology: 4Q Features of semiconductor devices: logic level; sensitive gate |
на замовлення 1990 шт: термін постачання 14-30 дні (днів) |
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| Z0109MA,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Mounting: THT Kind of package: reel; tape Technology: 4Q Features of semiconductor devices: logic level; sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||
| Z0109MA0,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 13.8A Mounting: THT Kind of package: bulk Technology: 4Q Features of semiconductor devices: logic level; sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| Z0109NA,116 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Mounting: THT Kind of package: reel; tape Technology: 4Q Features of semiconductor devices: logic level; sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||
| Z0109NA,126 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Mounting: THT Kind of package: Ammo Pack Technology: 4Q Features of semiconductor devices: logic level; sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||
| Z0109NA,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 10mA Max. forward impulse current: 8.5A Mounting: THT Kind of package: bulk Technology: 4Q Features of semiconductor devices: logic level; sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BYV10X-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 88A; SOD113,TO220FP-2 Type of diode: rectifying Case: SOD113; TO220FP-2 Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.6V Max. forward impulse current: 88A Kind of package: tube Reverse recovery time: 50ns |
на замовлення 1381 шт: термін постачання 14-30 дні (днів) |
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BYV10-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; SOD59,TO220AC Type of diode: rectifying Case: SOD59; TO220AC Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 80A Kind of package: tube Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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BYV10D-600PJ | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 10A; 100ns; DPAK; Ufmax: 1.3V Type of diode: rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.3V Max. forward impulse current: 120A Kind of package: reel; tape Reverse recovery time: 100ns Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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BYV10ED-600PJ | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 2V; Ifsm: 70A Type of diode: rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 2V Max. forward impulse current: 70A Kind of package: reel; tape Reverse recovery time: 50ns Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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BYV10EX-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 75A; SOD113,TO220FP-2 Type of diode: rectifying Case: SOD113; TO220FP-2 Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 75A Kind of package: tube Reverse recovery time: 50ns Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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BTA316-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 954 шт: термін постачання 14-30 дні (днів) |
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BTA316X-800B0,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1673 шт: термін постачання 14-30 дні (днів) |
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BTA316-800B0,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 625 шт: термін постачання 14-30 дні (днів) |
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BTA316X-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1988 шт: термін постачання 14-30 дні (днів) |
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BTA316-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1245 шт: термін постачання 14-30 дні (днів) |
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BTA316-600D,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 5mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 657 шт: термін постачання 14-30 дні (днів) |
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BTA216X-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 190A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 335 шт: термін постачання 14-30 дні (днів) |
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BTA316-800C,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 35mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 910 шт: термін постачання 14-30 дні (днів) |
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BTA316Y-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1028 шт: термін постачання 14-30 дні (днів) |
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BTA316B-800C,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: D2PAK Gate current: 35mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 807 шт: термін постачання 14-30 дні (днів) |
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BTA316Y-800CTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 35mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 539 шт: термін постачання 14-30 дні (днів) |
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BTA316B-600C,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: D2PAK Gate current: 35mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 704 шт: термін постачання 14-30 дні (днів) |
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| Z0103NA,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| Z0103NA0,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| Z0103NA0QP |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 5mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BT258-600R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
на замовлення 1111 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 61.55 грн |
| 12+ | 37.74 грн |
| 100+ | 29.17 грн |
| 500+ | 24.80 грн |
| 1000+ | 23.28 грн |
| BYV32E-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.72V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.72V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
на замовлення 2752 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 100.47 грн |
| 7+ | 68.92 грн |
| 10+ | 57.16 грн |
| 50+ | 47.91 грн |
| 100+ | 46.23 грн |
| 500+ | 43.71 грн |
| BYV32E-100,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
на замовлення 586 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 53.41 грн |
| 10+ | 42.19 грн |
| 25+ | 37.15 грн |
| 100+ | 33.62 грн |
| 250+ | 32.61 грн |
| BYV32E-150,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
на замовлення 200 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 53.41 грн |
| 10+ | 42.19 грн |
| 25+ | 37.15 грн |
| 100+ | 33.62 грн |
| BYV32E-200PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 125A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 18ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 125A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 18ns
товару немає в наявності
В кошику
од. на суму грн.
| BYV32E-300PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Heatsink thickness: 1.25...1.4mm
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BYV32EB-200PJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 125A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 125A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 125A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 125A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| BYV32EB-300PJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Max. forward impulse current: 220A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. load current: 20A
Max. forward impulse current: 220A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| BYV32EX-300PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Max. load current: 20A
Reverse recovery time: 25ns
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MCR100W-10MF |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 0.8A
Case: SOT223
Max. forward impulse current: 23A
Kind of package: reel; tape
Max. load current: 1.25A
Gate current: 90µA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1kV; Ifmax: 1.25A; 0.8A; Igt: 90uA; SOT223; SMD; reel,tape
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 0.8A
Case: SOT223
Max. forward impulse current: 23A
Kind of package: reel; tape
Max. load current: 1.25A
Gate current: 90µA
Type of thyristor: thyristor
товару немає в наявності
В кошику
од. на суму грн.
| BT149G,126 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Case: TO92
Gate current: 0.2mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Turn-on time: 2µs
Load current: 0.5A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Case: TO92
Gate current: 0.2mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Turn-on time: 2µs
Load current: 0.5A
на замовлення 9630 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 28.06 грн |
| 21+ | 20.34 грн |
| 24+ | 17.57 грн |
| 100+ | 10.09 грн |
| 500+ | 7.23 грн |
| 1000+ | 6.56 грн |
| 2000+ | 6.14 грн |
| BT149D,112 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; bulk; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Case: TO92
Gate current: 0.2mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: bulk
Turn-on time: 2µs
Load current: 0.5A
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; bulk; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Case: TO92
Gate current: 0.2mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: bulk
Turn-on time: 2µs
Load current: 0.5A
на замовлення 4977 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 28.97 грн |
| 25+ | 16.98 грн |
| 100+ | 10.51 грн |
| 500+ | 7.90 грн |
| 1000+ | 7.06 грн |
| 2000+ | 6.39 грн |
| BT149D,126 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Max. forward impulse current: 8A
Turn-on time: 2µs
на замовлення 355 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 34.40 грн |
| 20+ | 21.01 грн |
| 100+ | 12.19 грн |
| BT149G,412 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; bulk; 2us
Case: TO92
Mounting: THT
Kind of package: bulk
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 0.2mA
Load current: 0.5A
Max. load current: 0.8A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 9A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; bulk; 2us
Case: TO92
Mounting: THT
Kind of package: bulk
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 0.2mA
Load current: 0.5A
Max. load current: 0.8A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 9A
товару немає в наявності
В кошику
од. на суму грн.
| BTA212-800B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
на замовлення 4450 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 54.31 грн |
| 11+ | 40.93 грн |
| 12+ | 36.81 грн |
| 30+ | 32.53 грн |
| 100+ | 31.86 грн |
| BTA212-600B/DG,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 792 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 96.85 грн |
| 10+ | 57.24 грн |
| 50+ | 42.19 грн |
| 100+ | 39.08 грн |
| BTA212X-800B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 570 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 62.46 грн |
| 9+ | 51.27 грн |
| 10+ | 48.16 грн |
| 25+ | 44.30 грн |
| 50+ | 41.77 грн |
| 100+ | 39.59 грн |
| 500+ | 35.64 грн |
| BTA212-600E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 708 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 50.69 грн |
| 10+ | 42.28 грн |
| 12+ | 37.49 грн |
| 30+ | 36.48 грн |
| BTA212X-600D,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 525 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 58.84 грн |
| 11+ | 41.52 грн |
| 25+ | 36.65 грн |
| 100+ | 32.95 грн |
| 500+ | 31.10 грн |
| BTA212B-600E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 622 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 50.69 грн |
| 11+ | 39.67 грн |
| 25+ | 34.97 грн |
| 100+ | 33.87 грн |
| BTA212B-800E,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 573 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 101.38 грн |
| 10+ | 72.37 грн |
| 100+ | 52.87 грн |
| 500+ | 41.52 грн |
| BTA212-600B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA212-600D,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA212X-800E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA212-600F,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA212B-600B,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BTA212B-600D,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BTA212B-600F,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BTA212X-600B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA212X-600E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA212X-600F,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BT150-500R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; TO220AB; THT; tube; 2us
Turn-on time: 2µs
Gate current: 15µA
Load current: 2.5A
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 500V
Kind of package: tube
Case: TO220AB
Mounting: THT
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; TO220AB; THT; tube; 2us
Turn-on time: 2µs
Gate current: 15µA
Load current: 2.5A
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 500V
Kind of package: tube
Case: TO220AB
Mounting: THT
Type of thyristor: thyristor
на замовлення 340 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 72.41 грн |
| 10+ | 42.03 грн |
| 50+ | 30.93 грн |
| 100+ | 27.65 грн |
| SMBJ20AJ |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.41÷24.28V; 18.6A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22.41÷24.28V; 18.6A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.41...24.28V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
на замовлення 490 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 42+ | 10.86 грн |
| 70+ | 6.05 грн |
| 100+ | 5.38 грн |
| BTA212B-800B,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5600 шт
В кошику
од. на суму грн.
| Z0109NA0,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
на замовлення 1990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 24+ | 19.01 грн |
| 30+ | 14.37 грн |
| 100+ | 10.93 грн |
| 250+ | 9.67 грн |
| 1000+ | 8.24 грн |
| Z0109MA,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Mounting: THT
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Mounting: THT
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| Z0109MA0,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 10mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 13.8A
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
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В кошику
од. на суму грн.
| Z0109NA,116 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Mounting: THT
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Mounting: THT
Kind of package: reel; tape
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| Z0109NA,126 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Mounting: THT
Kind of package: Ammo Pack
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Mounting: THT
Kind of package: Ammo Pack
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| Z0109NA,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 10mA
Max. forward impulse current: 8.5A
Mounting: THT
Kind of package: bulk
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
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В кошику
од. на суму грн.
| BYV10X-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 88A
Kind of package: tube
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.6V
Max. forward impulse current: 88A
Kind of package: tube
Reverse recovery time: 50ns
на замовлення 1381 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 57.03 грн |
| 12+ | 36.48 грн |
| 50+ | 31.02 грн |
| 100+ | 28.83 грн |
| 500+ | 24.12 грн |
| 1000+ | 22.27 грн |
| BYV10-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; SOD59,TO220AC
Type of diode: rectifying
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; SOD59,TO220AC
Type of diode: rectifying
Case: SOD59; TO220AC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Kind of package: tube
Features of semiconductor devices: ultrafast switching
товару немає в наявності
Мінімальне замовлення: 5000 шт
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од. на суму грн.
| BYV10D-600PJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 100ns; DPAK; Ufmax: 1.3V
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Max. forward impulse current: 120A
Kind of package: reel; tape
Reverse recovery time: 100ns
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 100ns; DPAK; Ufmax: 1.3V
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.3V
Max. forward impulse current: 120A
Kind of package: reel; tape
Reverse recovery time: 100ns
Features of semiconductor devices: ultrafast switching
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| BYV10ED-600PJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 2V; Ifsm: 70A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 70A
Kind of package: reel; tape
Reverse recovery time: 50ns
Features of semiconductor devices: ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 10A; 50ns; DPAK; Ufmax: 2V; Ifsm: 70A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 70A
Kind of package: reel; tape
Reverse recovery time: 50ns
Features of semiconductor devices: ultrafast switching
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| BYV10EX-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 75A; SOD113,TO220FP-2
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Kind of package: tube
Reverse recovery time: 50ns
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 75A; SOD113,TO220FP-2
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Kind of package: tube
Reverse recovery time: 50ns
Features of semiconductor devices: ultrafast switching
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BTA316-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 954 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 101.38 грн |
| 10+ | 59.68 грн |
| 50+ | 47.24 грн |
| 100+ | 42.03 грн |
| 500+ | 30.17 грн |
| BTA316X-800B0,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1673 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 51.59 грн |
| 10+ | 43.12 грн |
| 12+ | 38.16 грн |
| 30+ | 37.32 грн |
| BTA316-800B0,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 625 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 57.03 грн |
| 10+ | 45.89 грн |
| 25+ | 40.34 грн |
| 100+ | 37.40 грн |
| BTA316X-600B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1988 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 59.74 грн |
| 10+ | 43.03 грн |
| 25+ | 37.82 грн |
| 100+ | 31.77 грн |
| 250+ | 30.51 грн |
| BTA316-800E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1245 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 76.94 грн |
| 10+ | 48.83 грн |
| 50+ | 42.11 грн |
| 100+ | 39.50 грн |
| 500+ | 33.87 грн |
| 1000+ | 33.62 грн |
| BTA316-600D,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 657 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 57.03 грн |
| 10+ | 43.03 грн |
| 25+ | 37.82 грн |
| 100+ | 34.04 грн |
| 500+ | 31.77 грн |
| BTA216X-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 335 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 57.03 грн |
| 9+ | 49.09 грн |
| 25+ | 45.39 грн |
| 100+ | 40.85 грн |
| BTA316-800C,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 910 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 99.57 грн |
| 6+ | 82.37 грн |
| 25+ | 73.12 грн |
| 100+ | 65.56 грн |
| BTA316Y-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1028 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 50.69 грн |
| 11+ | 40.34 грн |
| 12+ | 35.64 грн |
| 50+ | 34.88 грн |
| BTA316B-800C,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 807 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 123.10 грн |
| 10+ | 74.47 грн |
| 25+ | 64.72 грн |
| 100+ | 51.19 грн |
| 250+ | 43.12 грн |
| BTA316Y-800CTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 539 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 50.69 грн |
| 12+ | 35.22 грн |
| BTA316B-600C,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 704 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 92.33 грн |
| 10+ | 60.27 грн |
| 100+ | 46.56 грн |
| 400+ | 40.51 грн |
















