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BYC30WT-600PQ BYC30WT-600PQ WeEn Semiconductors BYC30WT-600P.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-3
Max. forward voltage: 1.38V
Reverse recovery time: 70ns
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BYC30W-600PT2Q WeEn Semiconductors BYC30W-600PT2Q.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 26ns
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BYC30-1200PQ BYC30-1200PQ WeEn Semiconductors byc30-1200p.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD59; TO220AC
Max. forward voltage: 3.3V
Reverse recovery time: 65ns
Heatsink thickness: 1.14...1.4mm
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BYC30-600P,127 BYC30-600P,127 WeEn Semiconductors BYC30-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
Reverse recovery time: 35ns
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BYC30B-600PJ BYC30B-600PJ WeEn Semiconductors BYC30B-600P.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
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BYC30DW-600PQ BYC30DW-600PQ WeEn Semiconductors BYC30DW-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: TO247-2
Max. forward voltage: 1.5V
Reverse recovery time: 26ns
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BYC30MB-650PJ WeEn Semiconductors BYC30MB-650P.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 650V; 30A; 20ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 270A
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30MW-650PT2Q WeEn Semiconductors BYC30MW-650PT2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 1.8V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30MX-650PQ WeEn Semiconductors BYC30MX-650PQ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30W-1200PQ BYC30W-1200PQ WeEn Semiconductors BYC30W-1200P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO247-2; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 3.5V
Reverse recovery time: 65ns
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BYC30Y-600PQ BYC30Y-600PQ WeEn Semiconductors BYC30Y-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
Reverse recovery time: 35ns
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BYC30Y-600PSQ WeEn Semiconductors BYC30Y-600PS.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: SOD59; TO220AC
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 45ns
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BTA316B-600B,118 BTA316B-600B,118 WeEn Semiconductors BTA316B-600B.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA316B-600B0J WeEn Semiconductors BTA316B-600B0.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA316B-600BT,118 WeEn Semiconductors BTA316B-600BT.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA316B-600CTJ WeEn Semiconductors BTA316B-600CT.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
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BTA316X-600C,127 BTA316X-600C,127 WeEn Semiconductors BTA316X-600C.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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P1KSMBJ27AJ WeEn Semiconductors P1KSMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 27V; 26.7A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 26.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Tolerance: ±5%
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TYN80W-1600TQ TYN80W-1600TQ WeEn Semiconductors TYN80W-1600T.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 126A; 80A; Igt: 80mA; SOT429,TO247-3; THT
Mounting: THT
Case: SOT429; TO247-3
Turn-on time: 2µs
Type of thyristor: thyristor
Gate current: 80mA
Load current: 80A
Max. load current: 126A
Max. forward impulse current: 850A
Max. off-state voltage: 1.6kV
Kind of package: tube
на замовлення 371 шт:
термін постачання 14-30 дні (днів)
1+489.28 грн
10+300.66 грн
30+262.24 грн
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WNS40100CQ WNS40100CQ WeEn Semiconductors WNS40100C.pdf _ween_psg2020.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. forward voltage: 0.64V
Max. load current: 40A
Max. forward impulse current: 330A
Kind of package: tube
на замовлення 552 шт:
термін постачання 14-30 дні (днів)
9+50.37 грн
11+39.34 грн
50+35.83 грн
Мінімальне замовлення: 9
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WNS40H100CQ WNS40H100CQ WeEn Semiconductors WNS40H100C.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
на замовлення 733 шт:
термін постачання 14-30 дні (днів)
7+69.26 грн
10+51.78 грн
50+45.10 грн
100+43.43 грн
Мінімальне замовлення: 7
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WNS40H100CBJ WNS40H100CBJ WeEn Semiconductors WNS40H100CB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: reel; tape
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
4+135.81 грн
10+79.26 грн
Мінімальне замовлення: 4
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BYV29-400,127 BYV29-400,127 WeEn Semiconductors BYV29-400.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Kind of package: tube
Type of diode: rectifying
Semiconductor structure: single diode
Case: SOD59; TO220AC
Mounting: THT
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 60ns
Heatsink thickness: 1.15...1.4mm
Max. forward voltage: 0.9V
Load current: 9A
Max. forward impulse current: 110A
Max. off-state voltage: 0.4kV
на замовлення 1391 шт:
термін постачання 14-30 дні (днів)
8+57.56 грн
11+40.26 грн
13+33.32 грн
25+27.14 грн
Мінімальне замовлення: 8
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BTA204-800E.127 BTA204-800E.127 WeEn Semiconductors BTA204-800E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA312B-600B,118 BTA312B-600B,118 WeEn Semiconductors BTA312B-600B.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 86 шт:
термін постачання 14-30 дні (днів)
5+102.53 грн
10+65.39 грн
Мінімальне замовлення: 5
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BTA312-600B/DG,127 WeEn Semiconductors BTA312-600B.pdf PHGLS25683-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 110A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 110A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA312X-600B,127 BTA312X-600B,127 WeEn Semiconductors BTA312X-600B.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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WNSC6D30650W6Q WeEn Semiconductors WNSC6D30650W6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. load current: 77A
Max. forward impulse current: 215A
Kind of package: tube
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5.0SMDJ64CAJ WeEn Semiconductors 5.0SMDJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
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BTA208-600D,127 BTA208-600D,127 WeEn Semiconductors BTA208-600D.pdf PHGLS30337-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-600D,127 BTA216X-600D,127 WeEn Semiconductors BTA216X-600D.pdf PHGLS23478-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-600E,127 BTA216X-600E,127 WeEn Semiconductors BTA216X-600E.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-600F,127 BTA216X-600F,127 WeEn Semiconductors BTA216X-600F.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-800B/L02Q WeEn Semiconductors BTA216X_500B&600B&800B.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT155W-1400TQ WeEn Semiconductors BT155W-1400T.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.4kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 715A
Turn-on time: 2µs
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BYV42G-200,127 BYV42G-200,127 WeEn Semiconductors byv42g-200.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; I2PAK; 28ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: I2PAK
Max. forward voltage: 0.78V
Max. load current: 30A
Reverse recovery time: 28ns
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BT139X-600F/DG,127 WeEn Semiconductors BT139X-600F.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BYC80MW-650PT2Q WeEn Semiconductors BYC80MW-650PT2Q.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; tube; Ifsm: 600A; TO247-2; 120ns
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 120ns
Max. forward voltage: 1.9V
Load current: 80A
Max. forward impulse current: 0.6kA
Max. load current: 160A
Max. off-state voltage: 650V
Case: TO247-2
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
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WND08P16DJ WND08P16DJ WeEn Semiconductors _ween_psg2020.pdf WND08P16D.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 8A; DPAK; Ufmax: 0.95V; Ifsm: 150A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 0.95V
Max. forward impulse current: 150A
Kind of package: reel; tape
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+449.71 грн
В кошику  од. на суму  грн.
SMAJ30CAJ SMAJ30CAJ WeEn Semiconductors SMAJ Series.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.55÷36.54V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.55...36.54V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Kind of package: reel; tape
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BYV415K-600PQ BYV415K-600PQ WeEn Semiconductors BYV415K-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 140A; SOT1259,TO3P
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: SOT1259; TO3P
Max. forward voltage: 1.1V
Max. load current: 30A
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BYC8-600P,127 BYC8-600P,127 WeEn Semiconductors byc8-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Reverse recovery time: 18ns
Max. forward voltage: 1.9V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: SOD59; TO220AC
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
на замовлення 839 шт:
термін постачання 14-30 дні (днів)
20+22.49 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BYC8X-600P,127 BYC8X-600P,127 WeEn Semiconductors byc8x-600p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD113,TO220FP-2
Reverse recovery time: 18ns
Max. forward voltage: 1.9V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: SOD113; TO220FP-2
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
на замовлення 730 шт:
термін постачання 14-30 дні (днів)
8+62.96 грн
10+46.60 грн
25+41.34 грн
50+37.42 грн
100+33.74 грн
250+29.31 грн
500+26.22 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYC8-600,127 BYC8-600,127 WeEn Semiconductors byc8-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.85V
Load current: 8A
Max. forward impulse current: 88A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
на замовлення 373 шт:
термін постачання 14-30 дні (днів)
11+41.37 грн
25+34.33 грн
50+32.49 грн
100+30.57 грн
250+28.15 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BYC8D-600,127 BYC8D-600,127 WeEn Semiconductors byc8d-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; SOD59,TO220AC
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.85V
Load current: 8A
Max. forward impulse current: 60A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
на замовлення 72 шт:
термін постачання 14-30 дні (днів)
8+56.66 грн
10+48.27 грн
50+39.25 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYC8B-600,118 BYC8B-600,118 WeEn Semiconductors byc8b-600.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 40ns; D2PAK,SOT404; Ufmax: 2.3V
Reverse recovery time: 40ns
Max. forward voltage: 2.3V
Load current: 8A
Max. forward impulse current: 60A
Max. off-state voltage: 0.6kV
Case: D2PAK; SOT404
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
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BYC8-1200PQ BYC8-1200PQ WeEn Semiconductors byc8-1200p.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Features of semiconductor devices: superfast switching
Reverse recovery time: 46ns
Max. forward voltage: 2V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 1.2kV
Case: SOD59; TO220AC
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
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BYC8B-600PJ BYC8B-600PJ WeEn Semiconductors byc8b-600p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 18ns; D2PAK,SOT404; Ufmax: 1.9V
Reverse recovery time: 18ns
Max. forward voltage: 1.9V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: D2PAK; SOT404
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
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BYC8DX-600,127 BYC8DX-600,127 WeEn Semiconductors byc8dx-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Features of semiconductor devices: superfast switching
Reverse recovery time: 20ns
Max. forward voltage: 1.5V
Load current: 8A
Max. forward impulse current: 55A
Max. off-state voltage: 0.6kV
Case: SOD113; TO220FP-2
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
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BYC8X-600,127 BYC8X-600,127 WeEn Semiconductors byc8x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Reverse recovery time: 40ns
Max. forward voltage: 1.85V
Load current: 8A
Max. forward impulse current: 88A
Max. off-state voltage: 0.6kV
Case: SOD113; TO220FP-2
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
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BTA208-800E,127 BTA208-800E,127 WeEn Semiconductors BTA208-800E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208-600E,127 BTA208-600E,127 WeEn Semiconductors bta208-600e.pdf Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT131-600 BT131-600 WeEn Semiconductors BT131-600.pdf _ween_psg2020.pdf description Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/7mA
Mounting: THT
Kind of package: bulk
Technology: 4Q
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
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BTA308Y-800C0TQ BTA308Y-800C0TQ WeEn Semiconductors bta308y-800c0t.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 941 шт:
термін постачання 14-30 дні (днів)
8+61.16 грн
14+31.57 грн
25+27.06 грн
100+24.80 грн
500+23.30 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BTA308X-800C0,127 WeEn Semiconductors BTA308X-800C0.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA308X-800B0Q BTA308X-800B0Q WeEn Semiconductors bta308x-800b0.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA308Y-800ETQ WeEn Semiconductors Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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BTA308S-800ETJ WeEn Semiconductors bta308s-800et.pdf Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA308X-800ETQ WeEn Semiconductors bta308x-800et.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT258S-800LT,118 BT258S-800LT,118 WeEn Semiconductors bt258s-800lt.pdf _ween_psg2020.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Mounting: SMD
Case: DPAK
Turn-on time: 2µs
Gate current: 50µA
Type of thyristor: thyristor
Kind of package: reel; tape
Max. load current: 8A
Load current: 5A
Max. forward impulse current: 75A
Max. off-state voltage: 0.8kV
на замовлення 2465 шт:
термін постачання 14-30 дні (днів)
5+97.14 грн
10+56.37 грн
100+39.59 грн
500+32.15 грн
1000+29.73 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BYC30WT-600PQ BYC30WT-600P.pdf _ween_psg2020.pdf
BYC30WT-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-3; 70ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-3
Max. forward voltage: 1.38V
Reverse recovery time: 70ns
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BYC30W-600PT2Q BYC30W-600PT2Q.pdf
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 270A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 26ns
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BYC30-1200PQ byc30-1200p.pdf _ween_psg2020.pdf
BYC30-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 270A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD59; TO220AC
Max. forward voltage: 3.3V
Reverse recovery time: 65ns
Heatsink thickness: 1.14...1.4mm
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BYC30-600P,127 BYC30-600P.pdf
BYC30-600P,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
Reverse recovery time: 35ns
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BYC30B-600PJ BYC30B-600P.pdf
BYC30B-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
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BYC30DW-600PQ BYC30DW-600P.pdf
BYC30DW-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; TO247-2; 26ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: TO247-2
Max. forward voltage: 1.5V
Reverse recovery time: 26ns
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BYC30MB-650PJ BYC30MB-650P.pdf
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 650V; 30A; 20ns; D2PAK,SOT404; Ufmax: 2.75V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 270A
Case: D2PAK; SOT404
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30MW-650PT2Q BYC30MW-650PT2.pdf
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; TO247-2; 20ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: TO247-2
Max. forward voltage: 1.8V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30MX-650PQ BYC30MX-650PQ.pdf
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 270A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 20ns
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BYC30W-1200PQ BYC30W-1200P.pdf
BYC30W-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 300A; TO247-2; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 3.5V
Reverse recovery time: 65ns
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BYC30Y-600PQ BYC30Y-600P.pdf
BYC30Y-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Max. forward voltage: 1.38V
Reverse recovery time: 35ns
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BYC30Y-600PSQ BYC30Y-600PS.pdf
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 260A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 260A
Case: SOD59; TO220AC
Max. forward voltage: 2.75V
Max. load current: 60A
Reverse recovery time: 45ns
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BTA316B-600B,118 BTA316B-600B.pdf
BTA316B-600B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA316B-600B0J BTA316B-600B0.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA316B-600BT,118 BTA316B-600BT.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA316B-600CTJ BTA316B-600CT.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 35mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
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BTA316X-600C,127 BTA316X-600C.pdf
BTA316X-600C,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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P1KSMBJ27AJ P1KSMBJ.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 27V; 26.7A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Max. forward impulse current: 26.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Tolerance: ±5%
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TYN80W-1600TQ TYN80W-1600T.pdf _ween_psg2020.pdf
TYN80W-1600TQ
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 126A; 80A; Igt: 80mA; SOT429,TO247-3; THT
Mounting: THT
Case: SOT429; TO247-3
Turn-on time: 2µs
Type of thyristor: thyristor
Gate current: 80mA
Load current: 80A
Max. load current: 126A
Max. forward impulse current: 850A
Max. off-state voltage: 1.6kV
Kind of package: tube
на замовлення 371 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+489.28 грн
10+300.66 грн
30+262.24 грн
В кошику  од. на суму  грн.
WNS40100CQ WNS40100C.pdf _ween_psg2020.pdf
WNS40100CQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: TO220AB
Max. forward voltage: 0.64V
Max. load current: 40A
Max. forward impulse current: 330A
Kind of package: tube
на замовлення 552 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+50.37 грн
11+39.34 грн
50+35.83 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
WNS40H100CQ WNS40H100C.PDF
WNS40H100CQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: tube
на замовлення 733 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+69.26 грн
10+51.78 грн
50+45.10 грн
100+43.43 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
WNS40H100CBJ WNS40H100CB.pdf
WNS40H100CBJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.68V
Max. load current: 40A
Max. forward impulse current: 380A
Kind of package: reel; tape
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+135.81 грн
10+79.26 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYV29-400,127 BYV29-400.pdf _ween_psg2020.pdf
BYV29-400,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Kind of package: tube
Type of diode: rectifying
Semiconductor structure: single diode
Case: SOD59; TO220AC
Mounting: THT
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 60ns
Heatsink thickness: 1.15...1.4mm
Max. forward voltage: 0.9V
Load current: 9A
Max. forward impulse current: 110A
Max. off-state voltage: 0.4kV
на замовлення 1391 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+57.56 грн
11+40.26 грн
13+33.32 грн
25+27.14 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BTA204-800E.127 BTA204-800E.pdf _ween_psg2020.pdf
BTA204-800E.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA312B-600B,118 BTA312B-600B.pdf _ween_psg2020.pdf
BTA312B-600B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 86 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+102.53 грн
10+65.39 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BTA312-600B/DG,127 BTA312-600B.pdf PHGLS25683-1.pdf?t.download=true&u=5oefqw
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 110A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 110A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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В кошику  од. на суму  грн.
BTA312X-600B,127 BTA312X-600B.pdf
BTA312X-600B,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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WNSC6D30650W6Q WNSC6D30650W6Q.pdf
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. load current: 77A
Max. forward impulse current: 215A
Kind of package: tube
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5.0SMDJ64CAJ 5.0SMDJ.pdf
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 71.1÷78.6V; 48.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 48.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
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BTA208-600D,127 BTA208-600D.pdf PHGLS30337-1.pdf?t.download=true&u=5oefqw
BTA208-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-600D,127 BTA216X-600D.pdf PHGLS23478-1.pdf?t.download=true&u=5oefqw
BTA216X-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-600E,127 BTA216X-600E.pdf
BTA216X-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-600F,127 BTA216X-600F.pdf
BTA216X-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA216X-800B/L02Q BTA216X_500B&600B&800B.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT155W-1400TQ BT155W-1400T.pdf
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.4kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 715A
Turn-on time: 2µs
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BYV42G-200,127 byv42g-200.pdf
BYV42G-200,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 15Ax2; tube; Ifsm: 150A; I2PAK; 28ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: I2PAK
Max. forward voltage: 0.78V
Max. load current: 30A
Reverse recovery time: 28ns
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BT139X-600F/DG,127 BT139X-600F.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BYC80MW-650PT2Q BYC80MW-650PT2Q.pdf
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; tube; Ifsm: 600A; TO247-2; 120ns
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 120ns
Max. forward voltage: 1.9V
Load current: 80A
Max. forward impulse current: 0.6kA
Max. load current: 160A
Max. off-state voltage: 650V
Case: TO247-2
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
товару немає в наявності
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WND08P16DJ _ween_psg2020.pdf WND08P16D.pdf
WND08P16DJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 8A; DPAK; Ufmax: 0.95V; Ifsm: 150A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 0.95V
Max. forward impulse current: 150A
Kind of package: reel; tape
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+449.71 грн
В кошику  од. на суму  грн.
SMAJ30CAJ SMAJ Series.pdf
SMAJ30CAJ
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.55÷36.54V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.55...36.54V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Kind of package: reel; tape
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BYV415K-600PQ BYV415K-600P.pdf
BYV415K-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; Ifsm: 140A; SOT1259,TO3P
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 140A
Case: SOT1259; TO3P
Max. forward voltage: 1.1V
Max. load current: 30A
товару немає в наявності
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BYC8-600P,127 byc8-600p.pdf
BYC8-600P,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Reverse recovery time: 18ns
Max. forward voltage: 1.9V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: SOD59; TO220AC
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
на замовлення 839 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.49 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BYC8X-600P,127 byc8x-600p.pdf
BYC8X-600P,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; SOD113,TO220FP-2
Reverse recovery time: 18ns
Max. forward voltage: 1.9V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: SOD113; TO220FP-2
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
на замовлення 730 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+62.96 грн
10+46.60 грн
25+41.34 грн
50+37.42 грн
100+33.74 грн
250+29.31 грн
500+26.22 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BYC8-600,127 byc8-600.pdf
BYC8-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.85V
Load current: 8A
Max. forward impulse current: 88A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
на замовлення 373 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
11+41.37 грн
25+34.33 грн
50+32.49 грн
100+30.57 грн
250+28.15 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BYC8D-600,127 byc8d-600.pdf
BYC8D-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 60A; SOD59,TO220AC
Case: SOD59; TO220AC
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.85V
Load current: 8A
Max. forward impulse current: 60A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
на замовлення 72 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+56.66 грн
10+48.27 грн
50+39.25 грн
Мінімальне замовлення: 8
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BYC8B-600,118 byc8b-600.pdf
BYC8B-600,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 40ns; D2PAK,SOT404; Ufmax: 2.3V
Reverse recovery time: 40ns
Max. forward voltage: 2.3V
Load current: 8A
Max. forward impulse current: 60A
Max. off-state voltage: 0.6kV
Case: D2PAK; SOT404
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
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BYC8-1200PQ byc8-1200p.pdf
BYC8-1200PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 100A; SOD59,TO220AC
Features of semiconductor devices: superfast switching
Reverse recovery time: 46ns
Max. forward voltage: 2V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 1.2kV
Case: SOD59; TO220AC
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
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BYC8B-600PJ byc8b-600p.pdf
BYC8B-600PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 18ns; D2PAK,SOT404; Ufmax: 1.9V
Reverse recovery time: 18ns
Max. forward voltage: 1.9V
Load current: 8A
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Case: D2PAK; SOT404
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
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BYC8DX-600,127 byc8dx-600.pdf
BYC8DX-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Features of semiconductor devices: superfast switching
Reverse recovery time: 20ns
Max. forward voltage: 1.5V
Load current: 8A
Max. forward impulse current: 55A
Max. off-state voltage: 0.6kV
Case: SOD113; TO220FP-2
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
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BYC8X-600,127 byc8x-600.pdf
BYC8X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Reverse recovery time: 40ns
Max. forward voltage: 1.85V
Load current: 8A
Max. forward impulse current: 88A
Max. off-state voltage: 0.6kV
Case: SOD113; TO220FP-2
Type of diode: rectifying
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
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BTA208-800E,127 BTA208-800E.pdf _ween_psg2020.pdf
BTA208-800E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA208-600E,127 bta208-600e.pdf
BTA208-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT131-600 description BT131-600.pdf _ween_psg2020.pdf
BT131-600
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3/7mA
Mounting: THT
Kind of package: bulk
Technology: 4Q
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
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BTA308Y-800C0TQ bta308y-800c0t.pdf
BTA308Y-800C0TQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 941 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+61.16 грн
14+31.57 грн
25+27.06 грн
100+24.80 грн
500+23.30 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BTA308X-800C0,127 BTA308X-800C0.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA308X-800B0Q bta308x-800b0.pdf
BTA308X-800B0Q
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 50mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA308Y-800ETQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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BTA308S-800ETJ bta308s-800et.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA308X-800ETQ bta308x-800et.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BT258S-800LT,118 bt258s-800lt.pdf _ween_psg2020.pdf
BT258S-800LT,118
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; DPAK; SMD; reel,tape; 2us
Mounting: SMD
Case: DPAK
Turn-on time: 2µs
Gate current: 50µA
Type of thyristor: thyristor
Kind of package: reel; tape
Max. load current: 8A
Load current: 5A
Max. forward impulse current: 75A
Max. off-state voltage: 0.8kV
на замовлення 2465 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+97.14 грн
10+56.37 грн
100+39.59 грн
500+32.15 грн
1000+29.73 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
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