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BTA312-600E,127 BTA312-600E,127 WeEn Semiconductors bta312-600e.pdf BTA312-600E.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
ESDAHD712BE2X ESDAHD712BE2X WeEn Semiconductors ESDAHD712BE2.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Type of diode: TVS array
Case: SOT23-3
Max. off-state voltage: 7...12V
Semiconductor structure: asymmetric; bidirectional
Max. forward impulse current: 19A
Breakdown voltage: 7.5...13.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Manufacturer series: HD
Peak pulse power dissipation: 0.5kW
Mounting: SMD
товар відсутній
BYV32E-200PQ WeEn Semiconductors BYV32E-200PQ.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 125A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 18ns
товар відсутній
BT258-800R,127 BT258-800R,127 WeEn Semiconductors bt258-800r.pdf Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
на замовлення 1123 шт:
термін постачання 21-30 дні (днів)
14+28.61 грн
25+ 23.92 грн
48+ 17.11 грн
130+ 16.13 грн
1000+ 15.72 грн
Мінімальне замовлення: 14
BTA216B-600B,118 BTA216B-600B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
BTA216B-600D,118 BTA216B-600D,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 635 шт:
термін постачання 21-30 дні (днів)
6+65.16 грн
7+ 54.94 грн
20+ 42.42 грн
53+ 39.64 грн
Мінімальне замовлення: 6
BTA216B-600E,118 BTA216B-600E,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
BTA216B-600F,118 BTA216B-600F,118 WeEn Semiconductors bta216b-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
BTA216B-800B,118 BTA216B-800B,118 WeEn Semiconductors bta216b-800b.pdf Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 123 шт:
термін постачання 21-30 дні (днів)
7+55.42 грн
8+ 46.18 грн
23+ 35.95 грн
62+ 34.01 грн
Мінімальне замовлення: 7
BTA216X-600B,127 BTA216X-600B,127 WeEn Semiconductors bta216x-600b.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 954 шт:
термін постачання 21-30 дні (днів)
8+50.18 грн
9+ 41.86 грн
24+ 34.01 грн
66+ 32.13 грн
250+ 31.02 грн
Мінімальне замовлення: 8
BTA216X-600D,127 BTA216X-600D,127 WeEn Semiconductors bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA216X-600E,127 BTA216X-600E,127 WeEn Semiconductors bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA216X-600F,127 BTA216X-600F,127 WeEn Semiconductors bta216x-600e.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA216X-800B,127 BTA216X-800B,127 WeEn Semiconductors BTA216X-800B.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1228 шт:
термін постачання 21-30 дні (днів)
8+49.43 грн
9+ 42.98 грн
25+ 32.55 грн
69+ 30.74 грн
500+ 30.39 грн
Мінімальне замовлення: 8
BTA216X-800B/L02Q WeEn Semiconductors BTA216X_500B%26600B%26800B.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA310X-600E,127 BTA310X-600E,127 WeEn Semiconductors bta310x-600e.pdf Category: Triacs
Description: Triac; 600V; 10A; TO220FP; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 600V
Features of semiconductor devices: sensitive gate
Gate current: 10mA
Type of thyristor: triac
Max. load current: 10A
Max. forward impulse current: 85A
товар відсутній
SMBJ33AJ WeEn Semiconductors SMBJ Series.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36.98÷40.3V; 11.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
товар відсутній
BTA212B-600B,118 WeEn Semiconductors bta212b-800b.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
BTA212B-600D,118 WeEn Semiconductors bta212b-600e.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
BTA212B-600E,118 BTA212B-600E,118 WeEn Semiconductors _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 668 шт:
термін постачання 21-30 дні (днів)
8+49.43 грн
9+ 38.94 грн
25+ 34.35 грн
26+ 31.5 грн
71+ 29.76 грн
Мінімальне замовлення: 8
BTA212B-600F,118 WeEn Semiconductors bta212b-600e.pdf Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
BTA212X-600B,127 WeEn Semiconductors bta212x-600b.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA212X-600D,127 BTA212X-600D,127 WeEn Semiconductors bta212x-600d.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 951 шт:
термін постачання 21-30 дні (днів)
8+50.93 грн
10+ 36.16 грн
25+ 31.99 грн
29+ 27.82 грн
80+ 26.29 грн
Мінімальне замовлення: 8
BTA212X-600E,127 WeEn Semiconductors bta212x-600d.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA212X-600F,127 WeEn Semiconductors bta212x-600d.pdf Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BT137S-800E,118 BT137S-800E,118 WeEn Semiconductors bt137s-800e.pdf Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 1999 шт:
термін постачання 21-30 дні (днів)
8+50.18 грн
10+ 35.19 грн
25+ 24.48 грн
53+ 15.44 грн
144+ 14.6 грн
Мінімальне замовлення: 8
BYV44-500,127 BYV44-500,127 WeEn Semiconductors BYV44_SERIES.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
на замовлення 271 шт:
термін постачання 21-30 дні (днів)
4+93.19 грн
10+ 81.37 грн
18+ 44.51 грн
50+ 42.42 грн
Мінімальне замовлення: 4
BYV34-600,127 BYV34-600,127 WeEn Semiconductors byv34-600.pdf PHGLS15015-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 12A; SOT78,TO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.48V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 12A
товар відсутній
MAC223A6,127 MAC223A6,127 WeEn Semiconductors mac223a6.pdf Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220AB
Mounting: THT
Max. forward impulse current: 190A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 25A
Gate current: 50/75mA
на замовлення 977 шт:
термін постачання 21-30 дні (днів)
7+56.92 грн
8+ 47.57 грн
22+ 36.72 грн
61+ 34.7 грн
Мінімальне замовлення: 7
MAC223A8X,127 MAC223A8X,127 WeEn Semiconductors mac223a8x.pdf Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220FP
Mounting: THT
Max. forward impulse current: 190A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 50/75mA
на замовлення 832 шт:
термін постачання 21-30 дні (днів)
7+50.21 грн
21+ 38.94 грн
25+ 38.87 грн
57+ 36.79 грн
Мінімальне замовлення: 7
BTA204W-800E,135 BTA204W-800E,135 WeEn Semiconductors BTA204W-800E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 3970 шт:
термін постачання 21-30 дні (днів)
20+19.25 грн
25+ 16.55 грн
65+ 12.45 грн
178+ 11.75 грн
Мінімальне замовлення: 20
BTA204X-800E,127 BTA204X-800E,127 WeEn Semiconductors bta204x-800e.pdf Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BYT79-500,127 BYT79-500,127 WeEn Semiconductors byt79-500.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
на замовлення 750 шт:
термін постачання 21-30 дні (днів)
8+49.43 грн
10+ 37.69 грн
25+ 31.02 грн
29+ 27.82 грн
80+ 26.29 грн
250+ 25.73 грн
Мінімальне замовлення: 8
BT137S-600G,118 BT137S-600G,118 WeEn Semiconductors bt137s-600g.pdf Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 2430 шт:
термін постачання 21-30 дні (днів)
16+24.94 грн
25+ 20.86 грн
49+ 16.55 грн
135+ 15.65 грн
Мінімальне замовлення: 16
P4SOD58AX P4SOD58AX WeEn Semiconductors P4SOD.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
товар відсутній
BT138X-800F,127 BT138X-800F,127 WeEn Semiconductors bt138x-800.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BUJ100,126 BUJ100,126 WeEn Semiconductors buj100.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Mounting: THT
Collector-emitter voltage: 400V
Current gain: 9...20
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: Ammo Pack
Case: TO92
товар відсутній
BUJ100,412 BUJ100,412 WeEn Semiconductors buj100.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Mounting: THT
Case: TO92
Kind of package: bulk
Collector-emitter voltage: 400V
Current gain: 9...20
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
товар відсутній
BUJ100LR,412 BUJ100LR,412 WeEn Semiconductors buj100lr.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...20
Mounting: THT
Kind of package: bulk
товар відсутній
BT136X-600F,127 BT136X-600F,127 WeEn Semiconductors bt136x-600.pdf PHGL-S-A0000772089-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
SMAJ30CAJ SMAJ30CAJ WeEn Semiconductors SMAJ Series.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 33.55÷36.54V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.55...36.54V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
товар відсутній
BYC5X-600,127 BYC5X-600,127 WeEn Semiconductors byc5x-600.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 44A; SOD113,TO220FP-2
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.2V
Load current: 5A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Max. forward impulse current: 44A
Kind of package: tube
Reverse recovery time: 30ns
товар відсутній
BYC5X-600PQ BYC5X-600PQ WeEn Semiconductors BYC5X-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 60A; SOD113,TO220FP-2
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 5A
Max. load current: 10A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 11ns
на замовлення 875 шт:
термін постачання 21-30 дні (днів)
8+49.43 грн
10+ 37.55 грн
25+ 33.1 грн
29+ 28.65 грн
79+ 27.12 грн
Мінімальне замовлення: 8
BYC8DX-600,127 BYC8DX-600,127 WeEn Semiconductors byc8dx-600.pdf PHGLS21903-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.5V
Reverse recovery time: 20ns
товар відсутній
WNS30H100CBJ WNS30H100CBJ WeEn Semiconductors WNS30H100CB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 15Ax2; D2PAK; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.67V
Max. load current: 30A
Max. off-state voltage: 100V
Case: D2PAK
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Load current: 15A x2
на замовлення 338 шт:
термін постачання 21-30 дні (днів)
7+56.17 грн
8+ 43.81 грн
25+ 38.25 грн
26+ 31.5 грн
71+ 29.83 грн
Мінімальне замовлення: 7
WNS30H100CQ WNS30H100CQ WeEn Semiconductors WNS30H100C.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.67V
Max. load current: 30A
Max. off-state voltage: 100V
Case: TO220AB
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Load current: 15A x2
на замовлення 501 шт:
термін постачання 21-30 дні (днів)
8+52.42 грн
9+ 39.64 грн
25+ 34.77 грн
29+ 28.72 грн
78+ 27.12 грн
Мінімальне замовлення: 8
BT155W-1200TQ BT155W-1200TQ WeEn Semiconductors _ween_psg2020.pdf BT155W-1200T.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Mounting: THT
Max. forward impulse current: 0.65kA
Load current: 50A
Gate current: 50mA
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Case: SOT429; TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 79A
на замовлення 472 шт:
термін постачання 21-30 дні (днів)
3+172.25 грн
5+ 143.26 грн
8+ 109.88 грн
21+ 103.62 грн
Мінімальне замовлення: 3
BTA425Z-800BTQ BTA425Z-800BTQ WeEn Semiconductors BTA425Z-800BT.pdf Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Gate current: 50mA
Max. load current: 25A
Max. forward impulse current: 250A
Type of thyristor: triac
на замовлення 326 шт:
термін постачання 21-30 дні (днів)
4+119.83 грн
5+ 99.45 грн
11+ 77.19 грн
29+ 73.02 грн
Мінімальне замовлення: 4
BTA425Z-800CTQ WeEn Semiconductors BTA425Z-800CT.pdf Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Gate current: 35mA
Max. load current: 25A
Max. forward impulse current: 250A
Type of thyristor: triac
товар відсутній
BTA445Z-800BTQ WeEn Semiconductors bta445z-800ct.pdf Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Kind of package: tube
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: SOT1292; TO3P
Max. off-state voltage: 0.8kV
Max. load current: 45A
Gate current: 50mA
Max. forward impulse current: 495A
Features of semiconductor devices: high temperature
товар відсутній
WNSC2M1K0170WQ WeEn Semiconductors WNSC2M1K0170WQ.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WNSC2M20120R6Q WeEn Semiconductors WNSC2M20120R.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
WNSC2M40120R6Q WeEn Semiconductors WNSC2M40120R.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 100A
Power dissipation: 405W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
BYV32E-100,127 BYV32E-100,127 WeEn Semiconductors byv32e-100.pdf BYV32E-100.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Max. load current: 20A
Max. off-state voltage: 100V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Mounting: THT
Load current: 10A x2
на замовлення 391 шт:
термін постачання 21-30 дні (днів)
8+52.42 грн
9+ 41.03 грн
25+ 36.16 грн
27+ 30.39 грн
74+ 28.72 грн
Мінімальне замовлення: 8
BYV32E-150,127 BYV32E-150,127 WeEn Semiconductors byv32e-150.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Max. load current: 20A
Max. off-state voltage: 150V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Mounting: THT
Load current: 10A x2
на замовлення 916 шт:
термін постачання 21-30 дні (днів)
8+52.42 грн
9+ 41.03 грн
25+ 36.16 грн
28+ 29.63 грн
76+ 28.03 грн
Мінімальне замовлення: 8
BYV32E-300PQ BYV32E-300PQ WeEn Semiconductors BYV32E-300P.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
товар відсутній
BYV32EB-200,118 BYV32EB-200,118 WeEn Semiconductors BYV32EB-200.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 200V
Max. load current: 20A
Max. forward voltage: 0.72V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
на замовлення 700 шт:
термін постачання 21-30 дні (днів)
8+53.17 грн
9+ 42.28 грн
25+ 36.3 грн
29+ 28.86 грн
78+ 27.26 грн
Мінімальне замовлення: 8
BYV32EB-200PJ BYV32EB-200PJ WeEn Semiconductors byv32eb-200p.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; D2PAK,SOT404; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. forward impulse current: 125A
Kind of package: reel; tape
товар відсутній
BYV32EB-300PJ BYV32EB-300PJ WeEn Semiconductors BYV32EB-300P.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Max. load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. forward impulse current: 220A
Kind of package: reel; tape
товар відсутній
BYV32EX-300PQ BYV32EX-300PQ WeEn Semiconductors BYV32EX-300P.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Reverse recovery time: 25ns
товар відсутній
BTA312-600E,127 bta312-600e.pdf BTA312-600E.pdf
BTA312-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
ESDAHD712BE2X ESDAHD712BE2.pdf
ESDAHD712BE2X
Виробник: WeEn Semiconductors
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 19A; 500W; asymmetric,bidirectional
Type of diode: TVS array
Case: SOT23-3
Max. off-state voltage: 7...12V
Semiconductor structure: asymmetric; bidirectional
Max. forward impulse current: 19A
Breakdown voltage: 7.5...13.3V
Leakage current: 1µA
Number of channels: 2
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Manufacturer series: HD
Peak pulse power dissipation: 0.5kW
Mounting: SMD
товар відсутній
BYV32E-200PQ BYV32E-200PQ.pdf
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 125A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 125A
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 18ns
товар відсутній
BT258-800R,127 bt258-800r.pdf
BT258-800R,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 8A; 5A; Igt: 50uA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 8A
Load current: 5A
Gate current: 50µA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 75A
Turn-on time: 2µs
на замовлення 1123 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
14+28.61 грн
25+ 23.92 грн
48+ 17.11 грн
130+ 16.13 грн
1000+ 15.72 грн
Мінімальне замовлення: 14
BTA216B-600B,118 bta216b-800b.pdf
BTA216B-600B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
BTA216B-600D,118 bta216b-600e.pdf
BTA216B-600D,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 635 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
6+65.16 грн
7+ 54.94 грн
20+ 42.42 грн
53+ 39.64 грн
Мінімальне замовлення: 6
BTA216B-600E,118 bta216b-600e.pdf
BTA216B-600E,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
BTA216B-600F,118 bta216b-600e.pdf
BTA216B-600F,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
BTA216B-800B,118 bta216b-800b.pdf
BTA216B-800B,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 123 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+55.42 грн
8+ 46.18 грн
23+ 35.95 грн
62+ 34.01 грн
Мінімальне замовлення: 7
BTA216X-600B,127 bta216x-600b.pdf
BTA216X-600B,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 954 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+50.18 грн
9+ 41.86 грн
24+ 34.01 грн
66+ 32.13 грн
250+ 31.02 грн
Мінімальне замовлення: 8
BTA216X-600D,127 bta216x-600e.pdf
BTA216X-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 5mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA216X-600E,127 bta216x-600e.pdf
BTA216X-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA216X-600F,127 bta216x-600e.pdf
BTA216X-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 25mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA216X-800B,127 BTA216X-800B.pdf _ween_psg2020.pdf
BTA216X-800B,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1228 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+49.43 грн
9+ 42.98 грн
25+ 32.55 грн
69+ 30.74 грн
500+ 30.39 грн
Мінімальне замовлення: 8
BTA216X-800B/L02Q BTA216X_500B%26600B%26800B.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA310X-600E,127 bta310x-600e.pdf
BTA310X-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220FP; Igt: 10mA; Ifsm: 85A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 600V
Features of semiconductor devices: sensitive gate
Gate current: 10mA
Type of thyristor: triac
Max. load current: 10A
Max. forward impulse current: 85A
товар відсутній
SMBJ33AJ SMBJ Series.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 36.98÷40.3V; 11.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.98...40.3V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
товар відсутній
BTA212B-600B,118 bta212b-800b.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
BTA212B-600D,118 bta212b-600e.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
BTA212B-600E,118 _ween_psg2020.pdf
BTA212B-600E,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 668 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+49.43 грн
9+ 38.94 грн
25+ 34.35 грн
26+ 31.5 грн
71+ 29.76 грн
Мінімальне замовлення: 8
BTA212B-600F,118 bta212b-600e.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товар відсутній
BTA212X-600B,127 bta212x-600b.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA212X-600D,127 bta212x-600d.pdf
BTA212X-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 951 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+50.93 грн
10+ 36.16 грн
25+ 31.99 грн
29+ 27.82 грн
80+ 26.29 грн
Мінімальне замовлення: 8
BTA212X-600E,127 bta212x-600d.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BTA212X-600F,127 bta212x-600d.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220FP; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BT137S-800E,118 bt137s-800e.pdf
BT137S-800E,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 1999 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+50.18 грн
10+ 35.19 грн
25+ 24.48 грн
53+ 15.44 грн
144+ 14.6 грн
Мінімальне замовлення: 8
BYV44-500,127 BYV44_SERIES.pdf _ween_psg2020.pdf
BYV44-500,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
на замовлення 271 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+93.19 грн
10+ 81.37 грн
18+ 44.51 грн
50+ 42.42 грн
Мінімальне замовлення: 4
BYV34-600,127 byv34-600.pdf PHGLS15015-1.pdf?t.download=true&u=5oefqw
BYV34-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 12A; SOT78,TO220AB
Mounting: THT
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. off-state voltage: 0.6kV
Max. load current: 20A
Max. forward voltage: 1.48V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 60ns
Max. forward impulse current: 12A
товар відсутній
MAC223A6,127 mac223a6.pdf
MAC223A6,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220AB
Mounting: THT
Max. forward impulse current: 190A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 25A
Gate current: 50/75mA
на замовлення 977 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+56.92 грн
8+ 47.57 грн
22+ 36.72 грн
61+ 34.7 грн
Мінімальне замовлення: 7
MAC223A8X,127 mac223a8x.pdf
MAC223A8X,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 20A; TO220FP; Igt: 50/75mA; Ifsm: 190A; 4Q
Case: TO220FP
Mounting: THT
Max. forward impulse current: 190A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 50/75mA
на замовлення 832 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+50.21 грн
21+ 38.94 грн
25+ 38.87 грн
57+ 36.79 грн
Мінімальне замовлення: 7
BTA204W-800E,135 BTA204W-800E.pdf _ween_psg2020.pdf
BTA204W-800E,135
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 3970 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
20+19.25 грн
25+ 16.55 грн
65+ 12.45 грн
178+ 11.75 грн
Мінімальне замовлення: 20
BTA204X-800E,127 bta204x-800e.pdf
BTA204X-800E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BYT79-500,127 byt79-500.pdf
BYT79-500,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
на замовлення 750 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+49.43 грн
10+ 37.69 грн
25+ 31.02 грн
29+ 27.82 грн
80+ 26.29 грн
250+ 25.73 грн
Мінімальне замовлення: 8
BT137S-600G,118 bt137s-600g.pdf
BT137S-600G,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 2430 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
16+24.94 грн
25+ 20.86 грн
49+ 16.55 грн
135+ 15.65 грн
Мінімальне замовлення: 16
P4SOD58AX P4SOD.pdf
P4SOD58AX
Виробник: WeEn Semiconductors
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 400W; 64.4÷71.2V; 4.3A; unidirectional; SOD123F; P4SOD
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SOD
товар відсутній
BT138X-800F,127 bt138x-800.pdf
BT138X-800F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
BUJ100,126 buj100.pdf
BUJ100,126
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Mounting: THT
Collector-emitter voltage: 400V
Current gain: 9...20
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: Ammo Pack
Case: TO92
товар відсутній
BUJ100,412 buj100.pdf
BUJ100,412
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2W; TO92
Mounting: THT
Case: TO92
Kind of package: bulk
Collector-emitter voltage: 400V
Current gain: 9...20
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
товар відсутній
BUJ100LR,412 buj100lr.pdf
BUJ100LR,412
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...20
Mounting: THT
Kind of package: bulk
товар відсутній
BT136X-600F,127 bt136x-600.pdf PHGL-S-A0000772089-1.pdf?t.download=true&u=5oefqw
BT136X-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товар відсутній
SMAJ30CAJ SMAJ Series.pdf
SMAJ30CAJ
Виробник: WeEn Semiconductors
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 400W; 33.55÷36.54V; 8.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.55...36.54V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
товар відсутній
BYC5X-600,127 byc5x-600.pdf
BYC5X-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 44A; SOD113,TO220FP-2
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.2V
Load current: 5A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Max. forward impulse current: 44A
Kind of package: tube
Reverse recovery time: 30ns
товар відсутній
BYC5X-600PQ BYC5X-600P.pdf
BYC5X-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5A; tube; Ifsm: 60A; SOD113,TO220FP-2
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
Load current: 5A
Max. load current: 10A
Semiconductor structure: single diode
Case: SOD113; TO220FP-2
Mounting: THT
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 11ns
на замовлення 875 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+49.43 грн
10+ 37.55 грн
25+ 33.1 грн
29+ 28.65 грн
79+ 27.12 грн
Мінімальне замовлення: 8
BYC8DX-600,127 byc8dx-600.pdf PHGLS21903-1.pdf?t.download=true&u=5oefqw
BYC8DX-600,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 55A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 55A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.5V
Reverse recovery time: 20ns
товар відсутній
WNS30H100CBJ WNS30H100CB.pdf
WNS30H100CBJ
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 15Ax2; D2PAK; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Max. forward voltage: 0.67V
Max. load current: 30A
Max. off-state voltage: 100V
Case: D2PAK
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Load current: 15A x2
на замовлення 338 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+56.17 грн
8+ 43.81 грн
25+ 38.25 грн
26+ 31.5 грн
71+ 29.83 грн
Мінімальне замовлення: 7
WNS30H100CQ WNS30H100C.PDF
WNS30H100CQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.67V
Max. load current: 30A
Max. off-state voltage: 100V
Case: TO220AB
Semiconductor structure: common cathode; double
Max. forward impulse current: 330A
Load current: 15A x2
на замовлення 501 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+52.42 грн
9+ 39.64 грн
25+ 34.77 грн
29+ 28.72 грн
78+ 27.12 грн
Мінімальне замовлення: 8
BT155W-1200TQ _ween_psg2020.pdf BT155W-1200T.pdf
BT155W-1200TQ
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Mounting: THT
Max. forward impulse current: 0.65kA
Load current: 50A
Gate current: 50mA
Turn-on time: 2µs
Kind of package: tube
Type of thyristor: thyristor
Case: SOT429; TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 79A
на замовлення 472 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+172.25 грн
5+ 143.26 грн
8+ 109.88 грн
21+ 103.62 грн
Мінімальне замовлення: 3
BTA425Z-800BTQ BTA425Z-800BT.pdf
BTA425Z-800BTQ
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Gate current: 50mA
Max. load current: 25A
Max. forward impulse current: 250A
Type of thyristor: triac
на замовлення 326 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+119.83 грн
5+ 99.45 грн
11+ 77.19 грн
29+ 73.02 грн
Мінімальне замовлення: 4
BTA425Z-800CTQ BTA425Z-800CT.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Technology: 3Q; Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.8kV
Features of semiconductor devices: high temperature; sensitive gate
Gate current: 35mA
Max. load current: 25A
Max. forward impulse current: 250A
Type of thyristor: triac
товар відсутній
BTA445Z-800BTQ bta445z-800ct.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Kind of package: tube
Technology: 3Q; Hi-Com
Type of thyristor: triac
Mounting: THT
Case: SOT1292; TO3P
Max. off-state voltage: 0.8kV
Max. load current: 45A
Gate current: 50mA
Max. forward impulse current: 495A
Features of semiconductor devices: high temperature
товар відсутній
WNSC2M1K0170WQ WNSC2M1K0170WQ.pdf
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 20A; 79W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 79W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
WNSC2M20120R6Q WNSC2M20120R.pdf
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 94A; Idm: 200A; 750W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 94A
Pulsed drain current: 200A
Power dissipation: 750W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
WNSC2M40120R6Q WNSC2M40120R.pdf
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 100A; 405W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 52A
Pulsed drain current: 100A
Power dissipation: 405W
Case: TO247-4
Gate-source voltage: -12...22V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
товар відсутній
BYV32E-100,127 byv32e-100.pdf BYV32E-100.pdf
BYV32E-100,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Max. load current: 20A
Max. off-state voltage: 100V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Mounting: THT
Load current: 10A x2
на замовлення 391 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+52.42 грн
9+ 41.03 грн
25+ 36.16 грн
27+ 30.39 грн
74+ 28.72 грн
Мінімальне замовлення: 8
BYV32E-150,127 byv32e-150.pdf
BYV32E-150,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
Max. load current: 20A
Max. off-state voltage: 150V
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.25...1.4mm
Case: SOT78; TO220AB
Max. forward voltage: 0.85V
Mounting: THT
Load current: 10A x2
на замовлення 916 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+52.42 грн
9+ 41.03 грн
25+ 36.16 грн
28+ 29.63 грн
76+ 28.03 грн
Мінімальне замовлення: 8
BYV32E-300PQ BYV32E-300P.pdf _ween_psg2020.pdf
BYV32E-300PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOT78; TO220AB
Max. forward voltage: 1.25V
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
товар відсутній
BYV32EB-200,118 BYV32EB-200.pdf _ween_psg2020.pdf
BYV32EB-200,118
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Case: D2PAK; SOT404
Max. off-state voltage: 200V
Max. load current: 20A
Max. forward voltage: 0.72V
Load current: 10A x2
Semiconductor structure: common cathode; double
Reverse recovery time: 25ns
Max. forward impulse current: 137A
на замовлення 700 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
8+53.17 грн
9+ 42.28 грн
25+ 36.3 грн
29+ 28.86 грн
78+ 27.26 грн
Мінімальне замовлення: 8
BYV32EB-200PJ byv32eb-200p.pdf
BYV32EB-200PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; D2PAK,SOT404; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.85V
Max. forward impulse current: 125A
Kind of package: reel; tape
товар відсутній
BYV32EB-300PJ BYV32EB-300P.pdf _ween_psg2020.pdf
BYV32EB-300PJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 220A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 10A x2
Max. load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 1.25V
Max. forward impulse current: 220A
Kind of package: reel; tape
товар відсутній
BYV32EX-300PQ BYV32EX-300P.pdf _ween_psg2020.pdf
BYV32EX-300PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 220A; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 220A
Case: SOD113; TO220FP-2
Max. forward voltage: 1.25V
Reverse recovery time: 25ns
товар відсутній
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