Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6351) > Сторінка 94 з 106
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BYV32EB-200,118 | WEEN SEMICONDUCTORS |
![]() tariffCode: 85411000 Bauform - Diode: SOT-404 Durchlassstoßstrom: 137A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - Durchlassspannung, max.: 1.15V Sperrverzögerungszeit: 25ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 20A euEccn: NLR Wiederkehrende Spitzensperrspannung: 200V Anzahl der Pins: 3 Pins Produktpalette: BYV32 productTraceability: No Betriebstemperatur, max.: 150°C SVHC: Lead (23-Jan-2024) |
на замовлення 4083 шт: термін постачання 21-31 дні (днів) |
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WNSC2D16650CWQ | WEEN SEMICONDUCTORS |
![]() tariffCode: 85411000 Bauform - Diode: TO-247 Kapazitive Gesamtladung: 13nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 16A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: To Be Advised |
на замовлення 480 шт: термін постачання 21-31 дні (днів) |
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WNSC6D04650Q | WEEN SEMICONDUCTORS |
![]() tariffCode: 85411000 Bauform - Diode: TO-220 Kapazitive Gesamtladung: 16nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 4A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: To Be Advised |
на замовлення 950 шт: термін постачання 21-31 дні (днів) |
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BT151S-650L,118 | WEEN SEMICONDUCTORS |
![]() tariffCode: 85413000 rohsCompliant: Y-EX Haltestrom, max.: 20mA hazardous: false rohsPhthalatesCompliant: YES Nicht periodischer Spitzen-Stoßstrom: 120A MSL: MSL 1 - unbegrenzt usEccn: EAR99 Durchlassstrom, durchschnittlich: 7.5A euEccn: NLR RMS-Durchlassstrom: 12A Zündspannung, max.: 1.5V Periodische Spitzen-Sperrspannung: 650V Anzahl der Pins: 3Pin(s) Produktpalette: BT151S Zündstrom, max.: 5mA productTraceability: No Thyristormontage: Oberflächenmontage Bauform - Thyristor: TO-252 (DPAK) Betriebstemperatur, max.: 125°C SVHC: To Be Advised |
на замовлення 1594 шт: термін постачання 21-31 дні (днів) |
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BTA312B-600CT,118 | WEEN SEMICONDUCTORS |
![]() tariffCode: 85413000 Bauform - Triac: TO-263 (D2PAK) rohsCompliant: Y-EX Haltestrom, max.: 35mA hazardous: false rohsPhthalatesCompliant: YES Nicht periodischer Spitzen-Stoßstrom: 100A Spitzen-Durchlassspannung: 1.6V usEccn: EAR99 euEccn: NLR RMS-Durchlassstrom: 12A Zündspannung, max.: 1V Periodische Spitzen-Sperrspannung: 600V Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Thyristormontage: Oberflächenmontage Betriebstemperatur, max.: 150°C SVHC: To Be Advised |
на замовлення 10166 шт: термін постачання 21-31 дні (днів) |
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BTA312B-600B,118 | WEEN SEMICONDUCTORS |
![]() tariffCode: 85413000 Bauform - Triac: TO-263 (D2PAK) rohsCompliant: Y-EX Haltestrom, max.: 60mA hazardous: false rohsPhthalatesCompliant: YES Nicht periodischer Spitzen-Stoßstrom: 100A Spitzen-Durchlassspannung: 1.6V usEccn: EAR99 euEccn: NLR RMS-Durchlassstrom: 12A Zündspannung, max.: 1V Periodische Spitzen-Sperrspannung: 600V Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Thyristormontage: Oberflächenmontage Betriebstemperatur, max.: 125°C SVHC: To Be Advised |
на замовлення 306 шт: термін постачання 21-31 дні (днів) |
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BTA204S-800E,118 | WEEN SEMICONDUCTORS |
![]() tariffCode: 85413000 Bauform - Triac: TO-252 (DPAK) rohsCompliant: Y-EX Haltestrom, max.: 12mA hazardous: false rohsPhthalatesCompliant: YES Nicht periodischer Spitzen-Stoßstrom: 25A Spitzen-Durchlassspannung: 1.7V MSL: MSL 1 - unbegrenzt usEccn: EAR99 RMS-Durchlassstrom: 4A euEccn: NLR Zündspannung, max.: 1V Periodische Spitzen-Sperrspannung: 800V Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Thyristormontage: Oberflächenmontage Betriebstemperatur, max.: 125°C SVHC: To Be Advised |
на замовлення 3956 шт: термін постачання 21-31 дні (днів) |
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BT136S-600D,118 | WEEN SEMICONDUCTORS |
![]() tariffCode: 85413000 Bauform - Triac: SOT-428 rohsCompliant: Y-EX Haltestrom, max.: 10mA hazardous: false rohsPhthalatesCompliant: YES Nicht periodischer Spitzen-Stoßstrom: 25A Spitzen-Durchlassspannung: 1.7V MSL: - usEccn: EAR99 RMS-Durchlassstrom: 4A euEccn: NLR Zündspannung, max.: 1.5V Periodische Spitzen-Sperrspannung: 600V Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Thyristormontage: Oberflächenmontage Betriebstemperatur, max.: 125°C SVHC: Lead (23-Jan-2024) |
на замовлення 3594 шт: термін постачання 21-31 дні (днів) |
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WNC3060D45160WQ | WEEN SEMICONDUCTORS |
![]() tariffCode: 85411000 Bauform - Diode: TO-247 Durchlassstoßstrom: - rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: - Sperrverzögerungszeit: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 30A euEccn: NLR Wiederkehrende Spitzensperrspannung: 600V Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: - SVHC: To Be Advised |
на замовлення 582 шт: термін постачання 21-31 дні (днів) |
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WNSC2D10650BJ | WEEN SEMICONDUCTORS |
![]() tariffCode: 85411000 Bauform - Diode: TO-263 (D2PAK) Kapazitive Gesamtladung: 14nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: To Be Advised |
на замовлення 3188 шт: термін постачання 21-31 дні (днів) |
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BT136S-600D,118 | WEEN SEMICONDUCTORS |
![]() tariffCode: 85413000 Bauform - Triac: TO-252 (DPAK) rohsCompliant: Y-EX Haltestrom, max.: 10mA hazardous: false rohsPhthalatesCompliant: YES Nicht periodischer Spitzen-Stoßstrom: 27A Spitzen-Durchlassspannung: 1.7V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR RMS-Durchlassstrom: 4A Zündspannung, max.: 1V Periodische Spitzen-Sperrspannung: 600V Anzahl der Pins: 3Pin(s) Produktpalette: BT136S productTraceability: No Thyristormontage: Oberflächenmontage Betriebstemperatur, max.: 125°C SVHC: To Be Advised |
на замовлення 4937 шт: термін постачання 21-31 дні (днів) |
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BT136S-600D,118 | WEEN SEMICONDUCTORS |
![]() tariffCode: 85413000 Bauform - Triac: TO-252 (DPAK) rohsCompliant: Y-EX Haltestrom, max.: 10mA hazardous: false rohsPhthalatesCompliant: YES Nicht periodischer Spitzen-Stoßstrom: 27A Spitzen-Durchlassspannung: 1.7V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR RMS-Durchlassstrom: 4A Zündspannung, max.: 1V Periodische Spitzen-Sperrspannung: 600V Anzahl der Pins: 3Pin(s) Produktpalette: BT136S productTraceability: No Thyristormontage: Oberflächenmontage Betriebstemperatur, max.: 125°C SVHC: To Be Advised |
на замовлення 4937 шт: термін постачання 21-31 дні (днів) |
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BTA440Z-1200ATQ | WEEN SEMICONDUCTORS |
![]() tariffCode: 85413000 Bauform - Triac: IITO-3P rohsCompliant: TBA Haltestrom, max.: 80mA hazardous: false rohsPhthalatesCompliant: TBA Nicht periodischer Spitzen-Stoßstrom: 440A Spitzen-Durchlassspannung: 1.4V usEccn: EAR99 RMS-Durchlassstrom: 40A euEccn: NLR Zündspannung, max.: 1.2V Periodische Spitzen-Sperrspannung: 1.2kV Anzahl der Pins: 3Pin(s) Produktpalette: AT Series productTraceability: No Thyristormontage: Durchsteckmontage Betriebstemperatur, max.: 150°C SVHC: No SVHC (21-Jan-2025) |
на замовлення 445 шт: термін постачання 21-31 дні (днів) |
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BTA410Y-800CT,127 | WEEN SEMICONDUCTORS |
![]() tariffCode: 85413000 Bauform - Triac: TO-220 rohsCompliant: Y-EX Haltestrom, max.: 35mA hazardous: false rohsPhthalatesCompliant: YES Nicht periodischer Spitzen-Stoßstrom: 110A Spitzen-Durchlassspannung: 1.6V usEccn: EAR99 RMS-Durchlassstrom: 10A euEccn: NLR Zündspannung, max.: 1V Periodische Spitzen-Sperrspannung: 800V Anzahl der Pins: 3Pin(s) Produktpalette: CT Series productTraceability: No Thyristormontage: Durchsteckmontage Betriebstemperatur, max.: 150°C SVHC: No SVHC (21-Jan-2025) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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BTA16-600BQ | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 16A; TO220AB; Igt: 50/70mA; Ifsm: 160A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 50/70mA Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube Max. forward impulse current: 160A Technology: 4Q |
на замовлення 1172 шт: термін постачання 21-30 дні (днів) |
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BTA16-800BQ | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 16A; TO220AB; Igt: 50/70mA; Ifsm: 160A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 50/70mA Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube Max. forward impulse current: 160A Technology: 4Q |
на замовлення 336 шт: термін постачання 21-30 дні (днів) |
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BTA408X-1000C0TQ | WeEn Semiconductors |
![]() ![]() Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 90A; 3Q,Hi-Com Case: TO220FP Mounting: THT Features of semiconductor devices: high temperature; sensitive gate Technology: 3Q; Hi-Com Type of thyristor: triac Max. off-state voltage: 1kV Max. load current: 8A Gate current: 35mA Max. forward impulse current: 90A Kind of package: tube |
на замовлення 42 шт: термін постачання 21-30 дні (днів) |
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BT152-800R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 20A Load current: 13A Gate current: 3mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 200A Turn-on time: 2µs |
на замовлення 393 шт: термін постачання 21-30 дні (днів) |
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BT169D,112 | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; bulk; 2us Mounting: THT Case: TO92 Max. off-state voltage: 0.4kV Max. load current: 0.8A Load current: 0.5A Gate current: 50mA Max. forward impulse current: 8A Turn-on time: 2µs Kind of package: bulk Quantity in set/package: 1000pcs. Type of thyristor: thyristor |
на замовлення 1313 шт: термін постачання 21-30 дні (днів) |
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PHE13009,127 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB Collector-emitter voltage: 400V Current gain: 8...40 Collector current: 12A Type of transistor: NPN Power dissipation: 80W Polarisation: bipolar Kind of package: tube Mounting: THT Case: TO220AB |
на замовлення 515 шт: термін постачання 21-30 дні (днів) |
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PHE13009/DG,127 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB; max.1.3mm Collector-emitter voltage: 400V Current gain: 8...40 Collector current: 12A Type of transistor: NPN Power dissipation: 80W Polarisation: bipolar Kind of package: tube Heatsink thickness: max. 1.3mm Mounting: THT Case: TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MAC97A6,116 | WeEn Semiconductors |
![]() Description: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.4kV Max. load current: 0.6A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MAC97A6,412 | WeEn Semiconductors |
![]() Description: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.4kV Max. load current: 0.6A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk |
на замовлення 2718 шт: термін постачання 21-30 дні (днів) |
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BTA225-800B,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220AB Gate current: 50mA Technology: 3Q; Hi-Com Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Max. forward impulse current: 190A |
на замовлення 339 шт: термін постачання 21-30 дні (днів) |
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BTA204-800B,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 4A; TO220AB; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220AB Gate current: 50mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 629 шт: термін постачання 21-30 дні (днів) |
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BT151-500R,127 | WeEn Semiconductors |
![]() Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
на замовлення 814 шт: термін постачання 21-30 дні (днів) |
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BT151-500RT,127 | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 500V; Ifmax: 12.5A; 8A; Igt: 2mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 12.5A Load current: 8A Gate current: 2mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
на замовлення 4017 шт: термін постачання 21-30 дні (днів) |
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BTA41-800BQ | WeEn Semiconductors |
![]() Description: Triac; 800V; 40A; SOT1292,TO3P; Igt: 50/70mA; Ifsm: 400A; 4Q Case: SOT1292; TO3P Mounting: THT Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 40A Gate current: 50/70mA Max. forward impulse current: 0.4kA Kind of package: tube |
на замовлення 440 шт: термін постачання 21-30 дні (днів) |
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BT137-600,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1138 шт: термін постачання 21-30 дні (днів) |
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BT137-600/L01,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BT137-600D,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 8A; TO220AB; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 5/10mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 294 шт: термін постачання 21-30 дні (днів) |
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BT137-600E,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 629 шт: термін постачання 21-30 дні (днів) |
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BT137-600E/DG | WeEn Semiconductors |
![]() Description: Triac; 600V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BT137-600E/L01,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BT137-600G,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 50/100mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 940 шт: термін постачання 21-30 дні (днів) |
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BT137-600G0TQ | WeEn Semiconductors |
![]() Description: Triac; 500V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q Type of thyristor: triac Max. off-state voltage: 500V Max. load current: 8A Case: TO220AB Gate current: 50/100mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BTA416Y-600C,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com Case: TO220AB Mounting: THT Features of semiconductor devices: high temperature; sensitive gate Technology: 3Q; Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Gate current: 35mA Max. forward impulse current: 160A Kind of package: tube |
на замовлення 959 шт: термін постачання 21-30 дні (днів) |
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BTA41-600BQ | WeEn Semiconductors |
![]() Description: Triac; 600V; 40A; SOT1292,TO3P; Igt: 50/70mA; Ifsm: 400A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 40A Case: SOT1292; TO3P Gate current: 50/70mA Mounting: THT Kind of package: tube Max. forward impulse current: 0.4kA Features of semiconductor devices: sensitive gate Technology: 4Q |
на замовлення 887 шт: термін постачання 21-30 дні (днів) |
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BTA410Y-600BT,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 10A Case: TO220AB Gate current: 50mA Max. forward impulse current: 100A Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTA410Y-600CT,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 10A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Case: TO220AB Mounting: THT Features of semiconductor devices: high temperature; sensitive gate Technology: 3Q; Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 10A Gate current: 35mA Max. forward impulse current: 100A Kind of package: tube |
на замовлення 228 шт: термін постачання 21-30 дні (днів) |
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BTA410Y-600ET,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 10A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 10A Case: TO220AB Gate current: 10mA Max. forward impulse current: 100A Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTA410Y-800BT,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 10A Case: TO220AB Gate current: 50mA Max. forward impulse current: 100A Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTA410Y-800CT,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 10A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 10A Case: TO220AB Gate current: 35mA Max. forward impulse current: 100A Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTA412Y-600B,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220AB Mounting: THT Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Gate current: 50mA Max. forward impulse current: 140A Kind of package: tube |
на замовлення 852 шт: термін постачання 21-30 дні (днів) |
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BTA412Y-600C,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 35mA Max. forward impulse current: 140A Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTA412Y-600ETQ | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 10mA Max. forward impulse current: 140A Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTA412Y-800B,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Case: TO220AB Mounting: THT Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Gate current: 50mA Max. forward impulse current: 140A Kind of package: tube |
на замовлення 923 шт: термін постачання 21-30 дні (днів) |
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BTA412Y-800C,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 35mA Max. forward impulse current: 140A Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT168G,112 | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us Mounting: THT Case: TO92 Kind of package: bulk Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 0.8A Load current: 0.5A Gate current: 50µA Max. forward impulse current: 8A Turn-on time: 2µs |
на замовлення 1967 шт: термін постачання 21-30 дні (днів) |
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BT168GW,115 | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape Mounting: SMD Case: SOT223 Kind of package: reel; tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 1A Load current: 0.63A Gate current: 50µA Max. forward impulse current: 8A Turn-on time: 2µs |
на замовлення 966 шт: термін постачання 21-30 дні (днів) |
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BT168GWF,115 | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 450uA; SOT223; SMD; reel,tape Mounting: SMD Case: SOT223 Kind of package: reel; tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 1A Load current: 0.63A Gate current: 450µA Max. forward impulse current: 9A |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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BT139X-600,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 16A; TO220FP; Igt: 35/70mA; Ifsm: 155A; 4Q Case: TO220FP Mounting: THT Kind of package: tube Max. off-state voltage: 0.6kV Max. load current: 16A Gate current: 35/70mA Max. forward impulse current: 155A Features of semiconductor devices: sensitive gate Technology: 4Q Type of thyristor: triac |
на замовлення 1345 шт: термін постачання 21-30 дні (днів) |
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Z0107MA,116 | WeEn Semiconductors |
![]() Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: reel; tape |
на замовлення 4042 шт: термін постачання 21-30 дні (днів) |
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Z0107MA,412 | WeEn Semiconductors |
![]() Description: Triac; 600V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 7mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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Z0107MN,135 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 8.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 5/7mA Max. forward impulse current: 8.5A Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape Technology: 4Q |
на замовлення 1340 шт: термін постачання 21-30 дні (днів) |
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Z0107MN0,135 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 5/7mA Max. forward impulse current: 12.5A Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape Technology: 4Q |
на замовлення 3979 шт: термін постачання 21-30 дні (днів) |
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Z0107NA,412 | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 7mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
Z0107NA0,412 | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 7mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
Z0107NA0QP | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 7mA Max. forward impulse current: 13.8A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: THT Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
Z0107NN,135 | WeEn Semiconductors |
![]() Description: Triac; 800V; 1A; SOT223; Igt: 7mA; Ifsm: 8.5A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 7mA Max. forward impulse current: 8.5A Technology: 4Q Features of semiconductor devices: logic level; sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
BYV32EB-200,118 |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BYV32EB-200,118 - Diode mit kurzer/ultrakurzer Erholzeit, 200 V, 20 A, Zweifach, gemeinsame Kathode, 1.15 V, 25 ns
tariffCode: 85411000
Bauform - Diode: SOT-404
Durchlassstoßstrom: 137A
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Zweifach, gemeinsame Kathode
Qualifikation: -
Durchlassspannung, max.: 1.15V
Sperrverzögerungszeit: 25ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 20A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 200V
Anzahl der Pins: 3 Pins
Produktpalette: BYV32
productTraceability: No
Betriebstemperatur, max.: 150°C
SVHC: Lead (23-Jan-2024)
Description: WEEN SEMICONDUCTORS - BYV32EB-200,118 - Diode mit kurzer/ultrakurzer Erholzeit, 200 V, 20 A, Zweifach, gemeinsame Kathode, 1.15 V, 25 ns
tariffCode: 85411000
Bauform - Diode: SOT-404
Durchlassstoßstrom: 137A
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Zweifach, gemeinsame Kathode
Qualifikation: -
Durchlassspannung, max.: 1.15V
Sperrverzögerungszeit: 25ns
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 20A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 200V
Anzahl der Pins: 3 Pins
Produktpalette: BYV32
productTraceability: No
Betriebstemperatur, max.: 150°C
SVHC: Lead (23-Jan-2024)
на замовлення 4083 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
100+ | 60.55 грн |
250+ | 55.75 грн |
WNSC2D16650CWQ |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - WNSC2D16650CWQ - SiC-Schottky-Diode, Zweifach, gemeinsame Kathode, 650 V, 16 A, 13 nC, TO-247
tariffCode: 85411000
Bauform - Diode: TO-247
Kapazitive Gesamtladung: 13nC
rohsCompliant: YES
Diodenmontage: Durchsteckmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Zweifach, gemeinsame Kathode
Qualifikation: -
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 16A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 650V
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
Description: WEEN SEMICONDUCTORS - WNSC2D16650CWQ - SiC-Schottky-Diode, Zweifach, gemeinsame Kathode, 650 V, 16 A, 13 nC, TO-247
tariffCode: 85411000
Bauform - Diode: TO-247
Kapazitive Gesamtladung: 13nC
rohsCompliant: YES
Diodenmontage: Durchsteckmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Zweifach, gemeinsame Kathode
Qualifikation: -
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 16A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 650V
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
на замовлення 480 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 163.84 грн |
10+ | 151.49 грн |
100+ | 139.14 грн |
WNSC6D04650Q |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - WNSC6D04650Q - SiC-Schottky-Diode, Einfach, 650 V, 4 A, 16 nC, TO-220
tariffCode: 85411000
Bauform - Diode: TO-220
Kapazitive Gesamtladung: 16nC
rohsCompliant: YES
Diodenmontage: Durchsteckmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 4A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 650V
Anzahl der Pins: 2 Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
Description: WEEN SEMICONDUCTORS - WNSC6D04650Q - SiC-Schottky-Diode, Einfach, 650 V, 4 A, 16 nC, TO-220
tariffCode: 85411000
Bauform - Diode: TO-220
Kapazitive Gesamtladung: 16nC
rohsCompliant: YES
Diodenmontage: Durchsteckmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 4A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 650V
Anzahl der Pins: 2 Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
на замовлення 950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 115.26 грн |
10+ | 95.50 грн |
100+ | 76.15 грн |
500+ | 63.68 грн |
BT151S-650L,118 |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BT151S-650L,118 - Thyristor, 650 V, 5 mA, 7.5 A, 12 A, TO-252 (DPAK), 3 Pin(s)
tariffCode: 85413000
rohsCompliant: Y-EX
Haltestrom, max.: 20mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 120A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Durchlassstrom, durchschnittlich: 7.5A
euEccn: NLR
RMS-Durchlassstrom: 12A
Zündspannung, max.: 1.5V
Periodische Spitzen-Sperrspannung: 650V
Anzahl der Pins: 3Pin(s)
Produktpalette: BT151S
Zündstrom, max.: 5mA
productTraceability: No
Thyristormontage: Oberflächenmontage
Bauform - Thyristor: TO-252 (DPAK)
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
Description: WEEN SEMICONDUCTORS - BT151S-650L,118 - Thyristor, 650 V, 5 mA, 7.5 A, 12 A, TO-252 (DPAK), 3 Pin(s)
tariffCode: 85413000
rohsCompliant: Y-EX
Haltestrom, max.: 20mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 120A
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Durchlassstrom, durchschnittlich: 7.5A
euEccn: NLR
RMS-Durchlassstrom: 12A
Zündspannung, max.: 1.5V
Periodische Spitzen-Sperrspannung: 650V
Anzahl der Pins: 3Pin(s)
Produktpalette: BT151S
Zündstrom, max.: 5mA
productTraceability: No
Thyristormontage: Oberflächenmontage
Bauform - Thyristor: TO-252 (DPAK)
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
на замовлення 1594 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
100+ | 37.21 грн |
500+ | 23.09 грн |
1000+ | 19.97 грн |
BTA312B-600CT,118 |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BTA312B-600CT,118 - Triac, 600 V, 12 A, TO-263 (D2PAK), 1 V, 100 A, 35 mA
tariffCode: 85413000
Bauform - Triac: TO-263 (D2PAK)
rohsCompliant: Y-EX
Haltestrom, max.: 35mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 100A
Spitzen-Durchlassspannung: 1.6V
usEccn: EAR99
euEccn: NLR
RMS-Durchlassstrom: 12A
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
Description: WEEN SEMICONDUCTORS - BTA312B-600CT,118 - Triac, 600 V, 12 A, TO-263 (D2PAK), 1 V, 100 A, 35 mA
tariffCode: 85413000
Bauform - Triac: TO-263 (D2PAK)
rohsCompliant: Y-EX
Haltestrom, max.: 35mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 100A
Spitzen-Durchlassspannung: 1.6V
usEccn: EAR99
euEccn: NLR
RMS-Durchlassstrom: 12A
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
на замовлення 10166 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
100+ | 60.27 грн |
500+ | 35.24 грн |
1000+ | 28.02 грн |
5000+ | 27.45 грн |
BTA312B-600B,118 |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BTA312B-600B,118 - Triac, 600 V, 12 A, TO-263 (D2PAK), 1 V, 100 A, 60 mA
tariffCode: 85413000
Bauform - Triac: TO-263 (D2PAK)
rohsCompliant: Y-EX
Haltestrom, max.: 60mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 100A
Spitzen-Durchlassspannung: 1.6V
usEccn: EAR99
euEccn: NLR
RMS-Durchlassstrom: 12A
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
Description: WEEN SEMICONDUCTORS - BTA312B-600B,118 - Triac, 600 V, 12 A, TO-263 (D2PAK), 1 V, 100 A, 60 mA
tariffCode: 85413000
Bauform - Triac: TO-263 (D2PAK)
rohsCompliant: Y-EX
Haltestrom, max.: 60mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 100A
Spitzen-Durchlassspannung: 1.6V
usEccn: EAR99
euEccn: NLR
RMS-Durchlassstrom: 12A
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
на замовлення 306 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
100+ | 56.64 грн |
BTA204S-800E,118 |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BTA204S-800E,118 - Triac, 800 V, 4 A, TO-252 (DPAK), 1 V, 25 A, 12 mA
tariffCode: 85413000
Bauform - Triac: TO-252 (DPAK)
rohsCompliant: Y-EX
Haltestrom, max.: 12mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 25A
Spitzen-Durchlassspannung: 1.7V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
RMS-Durchlassstrom: 4A
euEccn: NLR
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 800V
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
Description: WEEN SEMICONDUCTORS - BTA204S-800E,118 - Triac, 800 V, 4 A, TO-252 (DPAK), 1 V, 25 A, 12 mA
tariffCode: 85413000
Bauform - Triac: TO-252 (DPAK)
rohsCompliant: Y-EX
Haltestrom, max.: 12mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 25A
Spitzen-Durchlassspannung: 1.7V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
RMS-Durchlassstrom: 4A
euEccn: NLR
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 800V
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
на замовлення 3956 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 55.82 грн |
18+ | 48.25 грн |
100+ | 33.43 грн |
500+ | 25.92 грн |
1000+ | 20.32 грн |
BT136S-600D,118 |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BT136S-600D,118 - Triac, 600 V, 4 A, SOT-428, 1.5 V, 25 A, 10 mA
tariffCode: 85413000
Bauform - Triac: SOT-428
rohsCompliant: Y-EX
Haltestrom, max.: 10mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 25A
Spitzen-Durchlassspannung: 1.7V
MSL: -
usEccn: EAR99
RMS-Durchlassstrom: 4A
euEccn: NLR
Zündspannung, max.: 1.5V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: Lead (23-Jan-2024)
Description: WEEN SEMICONDUCTORS - BT136S-600D,118 - Triac, 600 V, 4 A, SOT-428, 1.5 V, 25 A, 10 mA
tariffCode: 85413000
Bauform - Triac: SOT-428
rohsCompliant: Y-EX
Haltestrom, max.: 10mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 25A
Spitzen-Durchlassspannung: 1.7V
MSL: -
usEccn: EAR99
RMS-Durchlassstrom: 4A
euEccn: NLR
Zündspannung, max.: 1.5V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: Lead (23-Jan-2024)
на замовлення 3594 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 78.62 грн |
17+ | 50.55 грн |
100+ | 33.51 грн |
500+ | 22.32 грн |
1000+ | 20.11 грн |
WNC3060D45160WQ |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - WNC3060D45160WQ - Diode mit Standard-Erholzeit, 600 V, 30 A, Einfach
tariffCode: 85411000
Bauform - Diode: TO-247
Durchlassstoßstrom: -
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: -
Sperrverzögerungszeit: -
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 30A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: -
SVHC: To Be Advised
Description: WEEN SEMICONDUCTORS - WNC3060D45160WQ - Diode mit Standard-Erholzeit, 600 V, 30 A, Einfach
tariffCode: 85411000
Bauform - Diode: TO-247
Durchlassstoßstrom: -
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
Durchlassspannung, max.: -
Sperrverzögerungszeit: -
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 30A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: -
SVHC: To Be Advised
на замовлення 582 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 272.51 грн |
10+ | 228.88 грн |
100+ | 185.24 грн |
500+ | 146.02 грн |
WNSC2D10650BJ |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - WNSC2D10650BJ - SiC-Schottky-Diode, Einfach, 650 V, 10 A, 14 nC, TO-263 (D2PAK)
tariffCode: 85411000
Bauform - Diode: TO-263 (D2PAK)
Kapazitive Gesamtladung: 14nC
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 10A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 650V
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
Description: WEEN SEMICONDUCTORS - WNSC2D10650BJ - SiC-Schottky-Diode, Einfach, 650 V, 10 A, 14 nC, TO-263 (D2PAK)
tariffCode: 85411000
Bauform - Diode: TO-263 (D2PAK)
Kapazitive Gesamtladung: 14nC
rohsCompliant: YES
Diodenmontage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 10A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 650V
Anzahl der Pins: 3 Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
на замовлення 3188 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
100+ | 90.56 грн |
500+ | 77.98 грн |
1000+ | 67.04 грн |
BT136S-600D,118 |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BT136S-600D,118 - Triac, 600 V, 4 A, TO-252 (DPAK), 1 V, 27 A, 10 mA
tariffCode: 85413000
Bauform - Triac: TO-252 (DPAK)
rohsCompliant: Y-EX
Haltestrom, max.: 10mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 27A
Spitzen-Durchlassspannung: 1.7V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
RMS-Durchlassstrom: 4A
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: BT136S
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
Description: WEEN SEMICONDUCTORS - BT136S-600D,118 - Triac, 600 V, 4 A, TO-252 (DPAK), 1 V, 27 A, 10 mA
tariffCode: 85413000
Bauform - Triac: TO-252 (DPAK)
rohsCompliant: Y-EX
Haltestrom, max.: 10mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 27A
Spitzen-Durchlassspannung: 1.7V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
RMS-Durchlassstrom: 4A
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: BT136S
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
на замовлення 4937 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 78.62 грн |
17+ | 50.55 грн |
100+ | 33.51 грн |
500+ | 22.32 грн |
1000+ | 20.11 грн |
BT136S-600D,118 |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BT136S-600D,118 - Triac, 600 V, 4 A, TO-252 (DPAK), 1 V, 27 A, 10 mA
tariffCode: 85413000
Bauform - Triac: TO-252 (DPAK)
rohsCompliant: Y-EX
Haltestrom, max.: 10mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 27A
Spitzen-Durchlassspannung: 1.7V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
RMS-Durchlassstrom: 4A
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: BT136S
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
Description: WEEN SEMICONDUCTORS - BT136S-600D,118 - Triac, 600 V, 4 A, TO-252 (DPAK), 1 V, 27 A, 10 mA
tariffCode: 85413000
Bauform - Triac: TO-252 (DPAK)
rohsCompliant: Y-EX
Haltestrom, max.: 10mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 27A
Spitzen-Durchlassspannung: 1.7V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
RMS-Durchlassstrom: 4A
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 600V
Anzahl der Pins: 3Pin(s)
Produktpalette: BT136S
productTraceability: No
Thyristormontage: Oberflächenmontage
Betriebstemperatur, max.: 125°C
SVHC: To Be Advised
на замовлення 4937 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
100+ | 33.51 грн |
500+ | 22.32 грн |
1000+ | 20.11 грн |
BTA440Z-1200ATQ |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BTA440Z-1200ATQ - Triac, 1.2 kV, 40 A, IITO-3P, 1.2 V, 440 A, 80 mA
tariffCode: 85413000
Bauform - Triac: IITO-3P
rohsCompliant: TBA
Haltestrom, max.: 80mA
hazardous: false
rohsPhthalatesCompliant: TBA
Nicht periodischer Spitzen-Stoßstrom: 440A
Spitzen-Durchlassspannung: 1.4V
usEccn: EAR99
RMS-Durchlassstrom: 40A
euEccn: NLR
Zündspannung, max.: 1.2V
Periodische Spitzen-Sperrspannung: 1.2kV
Anzahl der Pins: 3Pin(s)
Produktpalette: AT Series
productTraceability: No
Thyristormontage: Durchsteckmontage
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (21-Jan-2025)
Description: WEEN SEMICONDUCTORS - BTA440Z-1200ATQ - Triac, 1.2 kV, 40 A, IITO-3P, 1.2 V, 440 A, 80 mA
tariffCode: 85413000
Bauform - Triac: IITO-3P
rohsCompliant: TBA
Haltestrom, max.: 80mA
hazardous: false
rohsPhthalatesCompliant: TBA
Nicht periodischer Spitzen-Stoßstrom: 440A
Spitzen-Durchlassspannung: 1.4V
usEccn: EAR99
RMS-Durchlassstrom: 40A
euEccn: NLR
Zündspannung, max.: 1.2V
Periodische Spitzen-Sperrspannung: 1.2kV
Anzahl der Pins: 3Pin(s)
Produktpalette: AT Series
productTraceability: No
Thyristormontage: Durchsteckmontage
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (21-Jan-2025)
на замовлення 445 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 700.62 грн |
10+ | 594.42 грн |
100+ | 420.70 грн |
BTA410Y-800CT,127 |
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Виробник: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - BTA410Y-800CT,127 - Triac, 800 V, 10 A, TO-220, 1 V, 110 A, 35 mA
tariffCode: 85413000
Bauform - Triac: TO-220
rohsCompliant: Y-EX
Haltestrom, max.: 35mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 110A
Spitzen-Durchlassspannung: 1.6V
usEccn: EAR99
RMS-Durchlassstrom: 10A
euEccn: NLR
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 800V
Anzahl der Pins: 3Pin(s)
Produktpalette: CT Series
productTraceability: No
Thyristormontage: Durchsteckmontage
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (21-Jan-2025)
Description: WEEN SEMICONDUCTORS - BTA410Y-800CT,127 - Triac, 800 V, 10 A, TO-220, 1 V, 110 A, 35 mA
tariffCode: 85413000
Bauform - Triac: TO-220
rohsCompliant: Y-EX
Haltestrom, max.: 35mA
hazardous: false
rohsPhthalatesCompliant: YES
Nicht periodischer Spitzen-Stoßstrom: 110A
Spitzen-Durchlassspannung: 1.6V
usEccn: EAR99
RMS-Durchlassstrom: 10A
euEccn: NLR
Zündspannung, max.: 1V
Periodische Spitzen-Sperrspannung: 800V
Anzahl der Pins: 3Pin(s)
Produktpalette: CT Series
productTraceability: No
Thyristormontage: Durchsteckmontage
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (21-Jan-2025)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 200.06 грн |
10+ | 169.60 грн |
100+ | 119.38 грн |
500+ | 81.04 грн |
BTA16-600BQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/70mA; Ifsm: 160A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/70mA
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Max. forward impulse current: 160A
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/70mA; Ifsm: 160A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/70mA
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Max. forward impulse current: 160A
Technology: 4Q
на замовлення 1172 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 85.62 грн |
10+ | 70.10 грн |
28+ | 32.57 грн |
76+ | 30.81 грн |
BTA16-800BQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50/70mA; Ifsm: 160A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/70mA
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Max. forward impulse current: 160A
Technology: 4Q
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50/70mA; Ifsm: 160A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/70mA
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Max. forward impulse current: 160A
Technology: 4Q
на замовлення 336 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 87.27 грн |
10+ | 59.40 грн |
26+ | 34.71 грн |
71+ | 32.80 грн |
BTA408X-1000C0TQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 90A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Gate current: 35mA
Max. forward impulse current: 90A
Kind of package: tube
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 90A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Gate current: 35mA
Max. forward impulse current: 90A
Kind of package: tube
на замовлення 42 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
11+ | 35.63 грн |
25+ | 31.19 грн |
31+ | 29.05 грн |
BT152-800R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; 13A; Igt: 3mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 20A
Load current: 13A
Gate current: 3mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 200A
Turn-on time: 2µs
на замовлення 393 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 87.27 грн |
10+ | 66.66 грн |
23+ | 40.44 грн |
61+ | 38.22 грн |
BT169D,112 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Max. forward impulse current: 8A
Turn-on time: 2µs
Kind of package: bulk
Quantity in set/package: 1000pcs.
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50mA
Max. forward impulse current: 8A
Turn-on time: 2µs
Kind of package: bulk
Quantity in set/package: 1000pcs.
Type of thyristor: thyristor
на замовлення 1313 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.35 грн |
25+ | 15.75 грн |
50+ | 11.54 грн |
100+ | 10.12 грн |
205+ | 4.37 грн |
563+ | 4.14 грн |
PHE13009,127 |
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Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB
Collector-emitter voltage: 400V
Current gain: 8...40
Collector current: 12A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB
Collector-emitter voltage: 400V
Current gain: 8...40
Collector current: 12A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
на замовлення 515 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.98 грн |
10+ | 47.63 грн |
33+ | 27.37 грн |
90+ | 25.84 грн |
PHE13009/DG,127 |
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Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB; max.1.3mm
Collector-emitter voltage: 400V
Current gain: 8...40
Collector current: 12A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Heatsink thickness: max. 1.3mm
Mounting: THT
Case: TO220AB
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 12A; 80W; TO220AB; max.1.3mm
Collector-emitter voltage: 400V
Current gain: 8...40
Collector current: 12A
Type of transistor: NPN
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Heatsink thickness: max. 1.3mm
Mounting: THT
Case: TO220AB
товару немає в наявності
В кошику
од. на суму грн.
MAC97A6,116 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
MAC97A6,412 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 400V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
на замовлення 2718 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.05 грн |
23+ | 16.67 грн |
30+ | 13.15 грн |
100+ | 8.72 грн |
158+ | 5.66 грн |
434+ | 5.35 грн |
BTA225-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
на замовлення 339 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 150.66 грн |
10+ | 88.68 грн |
21+ | 42.81 грн |
58+ | 40.52 грн |
BTA204-800B,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 629 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.88 грн |
20+ | 20.03 грн |
22+ | 18.04 грн |
30+ | 15.98 грн |
100+ | 15.90 грн |
BT151-500R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
на замовлення 814 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 34.58 грн |
46+ | 19.65 грн |
125+ | 18.58 грн |
BT151-500RT,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12.5A; 8A; Igt: 2mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12.5A
Load current: 8A
Gate current: 2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12.5A; 8A; Igt: 2mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12.5A
Load current: 8A
Gate current: 2mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
на замовлення 4017 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 46.10 грн |
14+ | 27.98 грн |
25+ | 22.48 грн |
41+ | 22.17 грн |
100+ | 20.18 грн |
BTA41-800BQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 40A; SOT1292,TO3P; Igt: 50/70mA; Ifsm: 400A; 4Q
Case: SOT1292; TO3P
Mounting: THT
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 40A
Gate current: 50/70mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 40A; SOT1292,TO3P; Igt: 50/70mA; Ifsm: 400A; 4Q
Case: SOT1292; TO3P
Mounting: THT
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 40A
Gate current: 50/70mA
Max. forward impulse current: 0.4kA
Kind of package: tube
на замовлення 440 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 209.12 грн |
3+ | 174.30 грн |
7+ | 133.79 грн |
19+ | 126.14 грн |
BT137-600,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1138 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 58.45 грн |
11+ | 36.62 грн |
42+ | 21.56 грн |
114+ | 20.41 грн |
BT137-600/L01,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
BT137-600D,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 294 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
13+ | 30.96 грн |
42+ | 21.33 грн |
115+ | 20.18 грн |
BT137-600E,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 629 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.22 грн |
11+ | 36.16 грн |
43+ | 21.02 грн |
117+ | 19.88 грн |
BT137-600E/DG |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
BT137-600E/L01,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
BT137-600G,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 940 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.75 грн |
10+ | 41.97 грн |
40+ | 22.55 грн |
109+ | 21.33 грн |
BT137-600G0TQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 500V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 500V
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 500V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 500V
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
BTA416Y-600C,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 35mA
Max. forward impulse current: 160A
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 35mA
Max. forward impulse current: 160A
Kind of package: tube
на замовлення 959 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 69.16 грн |
10+ | 51.53 грн |
22+ | 40.98 грн |
60+ | 38.76 грн |
250+ | 38.45 грн |
500+ | 37.31 грн |
BTA41-600BQ |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 40A; SOT1292,TO3P; Igt: 50/70mA; Ifsm: 400A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 40A
Case: SOT1292; TO3P
Gate current: 50/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.4kA
Features of semiconductor devices: sensitive gate
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 40A; SOT1292,TO3P; Igt: 50/70mA; Ifsm: 400A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 40A
Case: SOT1292; TO3P
Gate current: 50/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.4kA
Features of semiconductor devices: sensitive gate
Technology: 4Q
на замовлення 887 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 220.64 грн |
7+ | 128.43 грн |
20+ | 121.55 грн |
450+ | 116.97 грн |
BTA410Y-600BT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
BTA410Y-600CT,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Gate current: 35mA
Max. forward impulse current: 100A
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Gate current: 35mA
Max. forward impulse current: 100A
Kind of package: tube
на замовлення 228 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 34.58 грн |
14+ | 29.20 грн |
25+ | 26.15 грн |
35+ | 25.61 грн |
97+ | 24.16 грн |
BTA410Y-600ET,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 10mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
BTA410Y-800BT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
BTA410Y-800CT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 10A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 10A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 10A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 10A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
BTA412Y-600B,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 50mA
Max. forward impulse current: 140A
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Gate current: 50mA
Max. forward impulse current: 140A
Kind of package: tube
на замовлення 852 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 48.57 грн |
10+ | 40.52 грн |
24+ | 37.69 грн |
25+ | 35.78 грн |
66+ | 35.70 грн |
100+ | 34.33 грн |
BTA412Y-600C,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
BTA412Y-600ETQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
BTA412Y-800B,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 50mA
Max. forward impulse current: 140A
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Gate current: 50mA
Max. forward impulse current: 140A
Kind of package: tube
на замовлення 923 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 67.51 грн |
10+ | 41.89 грн |
26+ | 34.63 грн |
71+ | 32.80 грн |
500+ | 31.57 грн |
BTA412Y-800C,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
BT168G,112 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50uA; TO92; THT; bulk; 2us
Mounting: THT
Case: TO92
Kind of package: bulk
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Load current: 0.5A
Gate current: 50µA
Max. forward impulse current: 8A
Turn-on time: 2µs
на замовлення 1967 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.11 грн |
35+ | 11.01 грн |
43+ | 8.92 грн |
100+ | 7.22 грн |
176+ | 5.08 грн |
484+ | 4.80 грн |
BT168GW,115 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1A
Load current: 0.63A
Gate current: 50µA
Max. forward impulse current: 8A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 50uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1A
Load current: 0.63A
Gate current: 50µA
Max. forward impulse current: 8A
Turn-on time: 2µs
на замовлення 966 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.29 грн |
20+ | 19.57 грн |
100+ | 13.23 грн |
105+ | 8.56 грн |
289+ | 8.03 грн |
BT168GWF,115 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 450uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1A
Load current: 0.63A
Gate current: 450µA
Max. forward impulse current: 9A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.63A; Igt: 450uA; SOT223; SMD; reel,tape
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1A
Load current: 0.63A
Gate current: 450µA
Max. forward impulse current: 9A
на замовлення 800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 24.70 грн |
21+ | 18.27 грн |
100+ | 11.09 грн |
156+ | 5.73 грн |
427+ | 5.43 грн |
BT139X-600,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 35/70mA; Ifsm: 155A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 35/70mA
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 35/70mA; Ifsm: 155A; 4Q
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. off-state voltage: 0.6kV
Max. load current: 16A
Gate current: 35/70mA
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Type of thyristor: triac
на замовлення 1345 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 79.86 грн |
10+ | 50.99 грн |
30+ | 30.50 грн |
81+ | 28.82 грн |
Z0107MA,116 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: reel; tape
на замовлення 4042 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.93 грн |
27+ | 14.22 грн |
46+ | 8.49 грн |
100+ | 7.64 грн |
130+ | 6.88 грн |
358+ | 6.50 грн |
2000+ | 6.27 грн |
Z0107MA,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
Z0107MN,135 | ![]() |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 8.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 8.5A
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 8.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 8.5A
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
на замовлення 1340 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.82 грн |
24+ | 16.44 грн |
100+ | 9.48 грн |
104+ | 8.64 грн |
284+ | 8.18 грн |
1000+ | 7.87 грн |
Z0107MN0,135 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 5/7mA; Ifsm: 12.5A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 5/7mA
Max. forward impulse current: 12.5A
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Technology: 4Q
на замовлення 3979 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.05 грн |
25+ | 15.90 грн |
100+ | 9.63 грн |
139+ | 6.42 грн |
382+ | 6.12 грн |
Z0107NA,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
Z0107NA0,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
Z0107NA0QP |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 7mA; Ifsm: 13.8A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 7mA
Max. forward impulse current: 13.8A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
Z0107NN,135 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 7mA; Ifsm: 8.5A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 7mA
Max. forward impulse current: 8.5A
Technology: 4Q
Features of semiconductor devices: logic level; sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.