Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6266) > Сторінка 94 з 105
Фото | Назва | Виробник | Інформація |
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BT137B-800F,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 8A; D2PAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: D2PAK Gate current: 25/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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BT137B-800G,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 8A; D2PAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: D2PAK Gate current: 50/100mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 766 шт: термін постачання 21-30 дні (днів) |
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BT137S-600,118 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 8A; DPAK; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 35/70mA Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 65A Features of semiconductor devices: sensitive gate Technology: 4Q |
на замовлення 1239 шт: термін постачання 21-30 дні (днів) |
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BT137S-600D,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 5/10mA Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 65A Features of semiconductor devices: sensitive gate Technology: 4Q |
на замовлення 781 шт: термін постачання 21-30 дні (днів) |
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BT137S-600E,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 10/25mA Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 65A Features of semiconductor devices: sensitive gate Technology: 4Q |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT137S-600F,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 8A; DPAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 25/70mA Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 65A Features of semiconductor devices: sensitive gate Technology: 4Q |
на замовлення 1425 шт: термін постачання 21-30 дні (днів) |
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BT138-600E,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 833 шт: термін постачання 21-30 дні (днів) |
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BTA440Z-800BTQ | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 40A; SOT1292,TO3P; Igt: 50/80mA; Ifsm: 400A; 3Q,Hi-Com Case: SOT1292; TO3P Mounting: THT Features of semiconductor devices: high temperature; sensitive gate Technology: 3Q; Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 40A Gate current: 50/80mA Max. forward impulse current: 0.4kA Kind of package: tube |
на замовлення 254 шт: термін постачання 21-30 дні (днів) |
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BTA208S-800E,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 10mA Technology: 3Q; Hi-Com Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Max. forward impulse current: 65A |
на замовлення 2310 шт: термін постачання 21-30 дні (днів) |
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BT150S-600R,118 | WeEn Semiconductors |
![]() Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 4A Load current: 2.5A Gate current: 15µA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 35A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT136-600,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 859 шт: термін постачання 21-30 дні (днів) |
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BT136-600D,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 5/10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 788 шт: термін постачання 21-30 дні (днів) |
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BT136-600E,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 10/25mA Mounting: THT Kind of package: tube Max. forward impulse current: 25A Features of semiconductor devices: sensitive gate Technology: 4Q |
на замовлення 2620 шт: термін постачання 21-30 дні (днів) |
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BT136-600E/L01,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 10/25mA Mounting: THT Kind of package: tube Max. forward impulse current: 25A Features of semiconductor devices: sensitive gate Technology: 4Q |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BT136-800E,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 947 шт: термін постачання 21-30 дні (днів) |
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BT136B-600E,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: D2PAK Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: tube |
на замовлення 778 шт: термін постачання 21-30 дні (днів) |
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BT136B-800E,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: D2PAK Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 565 шт: термін постачання 21-30 дні (днів) |
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BT136S-600,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; DPAK; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: DPAK Gate current: 35/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT136S-600D,118 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: DPAK Gate current: 5/10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 625 шт: термін постачання 21-30 дні (днів) |
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BT136S-600E,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: DPAK Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 1872 шт: термін постачання 21-30 дні (днів) |
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BT136S-600F,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: DPAK Gate current: 25/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT136S-800,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 4A; DPAK; Igt: 35/75mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: DPAK Gate current: 35/75mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 578 шт: термін постачання 21-30 дні (днів) |
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BT136S-800DJ | WeEn Semiconductors |
![]() Description: Triac; 800V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: DPAK Gate current: 5/10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 210 шт: термін постачання 21-30 дні (днів) |
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BT136S-800E,118 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: DPAK Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT136S-800F,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: DPAK Gate current: 25/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT136X-600,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 4A; TO220FP; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 573 шт: термін постачання 21-30 дні (днів) |
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BT136X-600D,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 4A; TO220FP; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 5/10mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WNSC16650CWQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 16A Max. forward impulse current: 48A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NXPSC166506Q | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Case: TO220AC Max. forward impulse current: 96A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NXPSC16650B6J | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Case: D2PAK Max. forward impulse current: 96A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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WNSC2D16650CWQ | WeEn Semiconductors |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube Technology: SiC Case: TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 48A Semiconductor structure: common cathode; double Max. off-state voltage: 650V Type of diode: Schottky rectifying Load current: 8A x2 Max. forward voltage: 1.8V Max. load current: 16A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT151S-500L,118 | WeEn Semiconductors |
![]() ![]() Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 5mA; DPAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 500V Max. load current: 12A Load current: 7.5A Gate current: 5mA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 120A Turn-on time: 2µs |
на замовлення 1473 шт: термін постачання 21-30 дні (днів) |
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BTA208X-600B,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com Mounting: THT Case: TO220FP Max. off-state voltage: 0.6kV Max. load current: 8A Gate current: 50mA Max. forward impulse current: 65A Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 3Q; Hi-Com Type of thyristor: triac |
на замовлення 764 шт: термін постачання 21-30 дні (днів) |
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BTA212-600B,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 50mA Technology: 3Q; Hi-Com Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Max. forward impulse current: 95A |
на замовлення 353 шт: термін постачання 21-30 дні (днів) |
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BTA212-600B/DG,127 | WeEn Semiconductors |
![]() Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 866 шт: термін постачання 21-30 дні (днів) |
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BTA212-600D,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 5mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTA212-600E,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 10mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 973 шт: термін постачання 21-30 дні (днів) |
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BTA212-600F,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 12A; TO220AB; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 25mA Max. forward impulse current: 95A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTA312-600B,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 913 шт: термін постачання 21-30 дні (днів) |
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BTA312-600B/DG,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 110A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 50mA Max. forward impulse current: 110A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BTA312-600C,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTA312-600CT,127 | WeEn Semiconductors |
![]() Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 507 шт: термін постачання 21-30 дні (днів) |
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BYV32E-200,127 | WeEn Semiconductors |
![]() ![]() Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 137A Case: SOT78; TO220AB Max. forward voltage: 0.72V Max. load current: 20A Heatsink thickness: 1.25...1.4mm Reverse recovery time: 25ns |
на замовлення 1350 шт: термін постачання 21-30 дні (днів) |
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PHD13003C,126 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 700V; 1.5A; 2.1W; TO92 Collector-emitter voltage: 700V Current gain: 8...25 Collector current: 1.5A Type of transistor: NPN Power dissipation: 2.1W Polarisation: bipolar Kind of package: Ammo Pack Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO92 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PHE13003A,412 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92 Collector-emitter voltage: 400V Current gain: 5...30 Collector current: 1A Type of transistor: NPN Power dissipation: 2.1W Polarisation: bipolar Kind of package: bulk Mounting: THT Case: TO92 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PHE13003C,126 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92 Collector-emitter voltage: 400V Current gain: 5...25 Collector current: 1.5A Type of transistor: NPN Power dissipation: 2.1W Polarisation: bipolar Kind of package: Ammo Pack Mounting: THT Case: TO92 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PHE13003C,412 | WeEn Semiconductors |
![]() Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92 Collector-emitter voltage: 400V Current gain: 5...25 Collector current: 1.5A Type of transistor: NPN Power dissipation: 2.1W Polarisation: bipolar Kind of package: bulk Mounting: THT Case: TO92 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT139-600,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 35/70mA Mounting: THT Kind of package: tube Max. forward impulse current: 155A Features of semiconductor devices: sensitive gate Technology: 4Q |
на замовлення 685 шт: термін постачання 21-30 дні (днів) |
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BT139-600E,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 10/25mA Mounting: THT Kind of package: tube Max. forward impulse current: 155A Features of semiconductor devices: sensitive gate Technology: 4Q |
на замовлення 857 шт: термін постачання 21-30 дні (днів) |
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BT139-600E/DG,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 10/25mA Mounting: THT Kind of package: tube Max. forward impulse current: 155A Features of semiconductor devices: sensitive gate Technology: 4Q |
на замовлення 945 шт: термін постачання 21-30 дні (днів) |
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BT139-800,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q Mounting: THT Case: TO220AB Max. forward impulse current: 155A Gate current: 35/70mA Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Max. load current: 16A Type of thyristor: triac Max. off-state voltage: 0.8kV |
на замовлення 1284 шт: термін постачання 21-30 дні (днів) |
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BT139-800E,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q Mounting: THT Case: TO220AB Max. forward impulse current: 155A Gate current: 10/25mA Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Max. load current: 16A Type of thyristor: triac Max. off-state voltage: 0.8kV |
на замовлення 885 шт: термін постачання 21-30 дні (днів) |
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BT139-800G,127 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q Mounting: THT Case: TO220AB Max. forward impulse current: 155A Gate current: 50/100mA Kind of package: tube Features of semiconductor devices: sensitive gate Technology: 4Q Max. load current: 16A Type of thyristor: triac Max. off-state voltage: 0.8kV |
на замовлення 924 шт: термін постачання 21-30 дні (днів) |
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BT139B-600,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; D2PAK; Igt: 35/70mA; Ifsm: 155A; 4Q; sensitive gate Mounting: SMD Case: D2PAK Max. forward impulse current: 155A Gate current: 35/70mA Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Max. load current: 16A Type of thyristor: triac Max. off-state voltage: 0.6kV |
на замовлення 314 шт: термін постачання 21-30 дні (днів) |
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BT139B-600E,118 | WeEn Semiconductors |
![]() ![]() Description: Triac; 600V; 16A; D2PAK; Igt: 10/25mA; Ifsm: 155A; 4Q; sensitive gate Mounting: SMD Case: D2PAK Max. forward impulse current: 155A Gate current: 10/25mA Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Max. load current: 16A Type of thyristor: triac Max. off-state voltage: 0.6kV |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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BT139B-600F,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; D2PAK; Igt: 25/70mA; Ifsm: 155A; 4Q; sensitive gate Mounting: SMD Case: D2PAK Max. forward impulse current: 155A Gate current: 25/70mA Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Max. load current: 16A Type of thyristor: triac Max. off-state voltage: 0.6kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT139B-600G,118 | WeEn Semiconductors |
![]() Description: Triac; 600V; 16A; D2PAK; Igt: 50/100mA; Ifsm: 155A; 4Q Mounting: SMD Case: D2PAK Max. forward impulse current: 155A Gate current: 50/100mA Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Max. load current: 16A Type of thyristor: triac Max. off-state voltage: 0.6kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BT139B-800,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 16A; D2PAK; Igt: 35/70mA; Ifsm: 155A; 4Q; sensitive gate Mounting: SMD Case: D2PAK Max. forward impulse current: 155A Gate current: 35/70mA Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Max. load current: 16A Type of thyristor: triac Max. off-state voltage: 0.8kV |
на замовлення 357 шт: термін постачання 21-30 дні (днів) |
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BT139B-800E,118 | WeEn Semiconductors |
![]() ![]() Description: Triac; 800V; 16A; D2PAK; Igt: 10/25mA; Ifsm: 155A; 4Q; sensitive gate Mounting: SMD Case: D2PAK Max. forward impulse current: 155A Gate current: 10/25mA Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Max. load current: 16A Type of thyristor: triac Max. off-state voltage: 0.8kV |
на замовлення 912 шт: термін постачання 21-30 дні (днів) |
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BT139B-800F,118 | WeEn Semiconductors |
![]() Description: Triac; 800V; 16A; D2PAK; Igt: 25/70mA; Ifsm: 155A; 4Q; sensitive gate Mounting: SMD Case: D2PAK Max. forward impulse current: 155A Gate current: 25/70mA Kind of package: reel; tape Features of semiconductor devices: sensitive gate Technology: 4Q Max. load current: 16A Type of thyristor: triac Max. off-state voltage: 0.8kV |
товару немає в наявності |
В кошику од. на суму грн. |
BT137B-800F,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 25/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 27 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 60.10 грн |
10+ | 43.50 грн |
BT137B-800G,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; D2PAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: D2PAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 766 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.98 грн |
11+ | 37.31 грн |
25+ | 31.34 грн |
42+ | 21.56 грн |
114+ | 20.34 грн |
BT137S-600,118 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 35/70mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 35/70mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Technology: 4Q
на замовлення 1239 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 51.04 грн |
10+ | 38.91 грн |
53+ | 17.12 грн |
144+ | 16.21 грн |
BT137S-600D,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 5/10mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 5/10mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Technology: 4Q
на замовлення 781 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 45.28 грн |
13+ | 29.43 грн |
46+ | 19.65 грн |
125+ | 18.58 грн |
BT137S-600E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 10/25mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 10/25mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 10/25mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Technology: 4Q
товару немає в наявності
В кошику
од. на суму грн.
BT137S-600F,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 25/70mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 25/70mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 65A
Features of semiconductor devices: sensitive gate
Technology: 4Q
на замовлення 1425 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 29.64 грн |
25+ | 25.23 грн |
48+ | 18.94 грн |
130+ | 17.91 грн |
BT138-600E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 833 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 70.80 грн |
10+ | 45.72 грн |
33+ | 27.37 грн |
50+ | 27.29 грн |
90+ | 25.84 грн |
BTA440Z-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 40A; SOT1292,TO3P; Igt: 50/80mA; Ifsm: 400A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 40A
Gate current: 50/80mA
Max. forward impulse current: 0.4kA
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 40A; SOT1292,TO3P; Igt: 50/80mA; Ifsm: 400A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Features of semiconductor devices: high temperature; sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 40A
Gate current: 50/80mA
Max. forward impulse current: 0.4kA
Kind of package: tube
на замовлення 254 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 211.59 грн |
7+ | 131.49 грн |
19+ | 123.85 грн |
BTA208S-800E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
на замовлення 2310 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.75 грн |
10+ | 38.45 грн |
34+ | 26.22 грн |
94+ | 24.77 грн |
1000+ | 23.85 грн |
BT150S-600R,118 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 35A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 35A
Turn-on time: 2µs
товару немає в наявності
В кошику
од. на суму грн.
BT136-600,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 859 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
15+ | 26.15 грн |
50+ | 22.63 грн |
55+ | 16.28 грн |
151+ | 15.37 грн |
BT136-600D,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 788 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.52 грн |
17+ | 23.24 грн |
50+ | 20.26 грн |
52+ | 17.35 грн |
142+ | 16.44 грн |
500+ | 16.21 грн |
BT136-600E,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
на замовлення 2620 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 59.28 грн |
10+ | 40.29 грн |
25+ | 31.04 грн |
50+ | 25.30 грн |
55+ | 16.44 грн |
150+ | 15.52 грн |
BT136-600E/L01,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Features of semiconductor devices: sensitive gate
Technology: 4Q
товару немає в наявності
В кошику
од. на суму грн.
BT136-800E,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220AB; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 947 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.98 грн |
11+ | 37.00 грн |
25+ | 32.03 грн |
56+ | 16.21 грн |
152+ | 15.29 грн |
BT136B-600E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: D2PAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: D2PAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: tube
на замовлення 778 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
50+ | 17.89 грн |
138+ | 16.90 грн |
BT136B-800E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: D2PAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; D2PAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: D2PAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 565 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 64.22 грн |
10+ | 44.26 грн |
47+ | 19.19 грн |
128+ | 18.19 грн |
BT136S-600,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
BT136S-600D,118 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 625 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 65.86 грн |
10+ | 40.75 грн |
48+ | 18.96 грн |
130+ | 17.89 грн |
BT136S-600E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 1872 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 69.98 грн |
10+ | 42.12 грн |
44+ | 20.72 грн |
119+ | 19.57 грн |
1000+ | 19.42 грн |
BT136S-600F,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
BT136S-800,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 35/75mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 35/75mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 35/75mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 35/75mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 578 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
10+ | 41.82 грн |
14+ | 29.05 грн |
30+ | 23.93 грн |
44+ | 20.56 грн |
120+ | 19.42 грн |
BT136S-800DJ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 210 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.17 грн |
25+ | 23.16 грн |
51+ | 17.74 грн |
139+ | 16.74 грн |
BT136S-800E,118 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
BT136S-800F,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; DPAK; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: DPAK
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
BT136X-600,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 573 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.98 грн |
14+ | 27.67 грн |
50+ | 24.77 грн |
55+ | 16.28 грн |
151+ | 15.37 грн |
BT136X-600D,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 5/10mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
WNSC16650CWQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
NXPSC166506Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 96A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 96A
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
NXPSC16650B6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 96A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward impulse current: 96A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
WNSC2D16650CWQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 48A
Semiconductor structure: common cathode; double
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 8A x2
Max. forward voltage: 1.8V
Max. load current: 16A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Technology: SiC
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 48A
Semiconductor structure: common cathode; double
Max. off-state voltage: 650V
Type of diode: Schottky rectifying
Load current: 8A x2
Max. forward voltage: 1.8V
Max. load current: 16A
товару немає в наявності
В кошику
од. на суму грн.
BT151S-500L,118 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 5mA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 5mA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 120A
Turn-on time: 2µs
на замовлення 1473 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 51.87 грн |
41+ | 21.79 грн |
113+ | 20.64 грн |
500+ | 20.41 грн |
BTA208X-600B,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 50mA
Max. forward impulse current: 65A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 50mA; Ifsm: 65A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Max. off-state voltage: 0.6kV
Max. load current: 8A
Gate current: 50mA
Max. forward impulse current: 65A
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 3Q; Hi-Com
Type of thyristor: triac
на замовлення 764 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 59.28 грн |
10+ | 45.72 грн |
36+ | 25.23 грн |
98+ | 23.85 грн |
BTA212-600B,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 95A
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 95A
на замовлення 353 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 51.87 грн |
9+ | 42.51 грн |
25+ | 36.77 грн |
67+ | 34.78 грн |
250+ | 33.48 грн |
BTA212-600B/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 50mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 866 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
9+ | 45.87 грн |
10+ | 40.52 грн |
23+ | 38.68 грн |
30+ | 36.39 грн |
100+ | 35.17 грн |
BTA212-600D,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 5mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
BTA212-600E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 10mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 973 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
9+ | 45.87 грн |
10+ | 40.52 грн |
24+ | 37.61 грн |
30+ | 36.39 грн |
66+ | 35.55 грн |
100+ | 34.25 грн |
BTA212-600F,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 25mA; Ifsm: 95A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 95A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
BTA312-600B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 913 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
11+ | 38.00 грн |
12+ | 34.10 грн |
30+ | 30.12 грн |
32+ | 28.97 грн |
87+ | 27.45 грн |
100+ | 27.06 грн |
BTA312-600B/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 110A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 110A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50mA; Ifsm: 110A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 110A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
BTA312-600C,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
BTA312-600CT,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 507 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 60.10 грн |
11+ | 37.61 грн |
25+ | 33.56 грн |
31+ | 30.04 грн |
84+ | 28.36 грн |
500+ | 27.98 грн |
BYV32E-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.72V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10Ax2; tube; Ifsm: 137A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 137A
Case: SOT78; TO220AB
Max. forward voltage: 0.72V
Max. load current: 20A
Heatsink thickness: 1.25...1.4mm
Reverse recovery time: 25ns
на замовлення 1350 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 101.27 грн |
10+ | 56.57 грн |
25+ | 36.08 грн |
69+ | 34.10 грн |
1000+ | 33.48 грн |
PHD13003C,126 |
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Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 1.5A; 2.1W; TO92
Collector-emitter voltage: 700V
Current gain: 8...25
Collector current: 1.5A
Type of transistor: NPN
Power dissipation: 2.1W
Polarisation: bipolar
Kind of package: Ammo Pack
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO92
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 1.5A; 2.1W; TO92
Collector-emitter voltage: 700V
Current gain: 8...25
Collector current: 1.5A
Type of transistor: NPN
Power dissipation: 2.1W
Polarisation: bipolar
Kind of package: Ammo Pack
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO92
товару немає в наявності
В кошику
од. на суму грн.
PHE13003A,412 |
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Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Collector-emitter voltage: 400V
Current gain: 5...30
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2.1W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO92
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Collector-emitter voltage: 400V
Current gain: 5...30
Collector current: 1A
Type of transistor: NPN
Power dissipation: 2.1W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO92
товару немає в наявності
В кошику
од. на суму грн.
PHE13003C,126 |
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Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92
Collector-emitter voltage: 400V
Current gain: 5...25
Collector current: 1.5A
Type of transistor: NPN
Power dissipation: 2.1W
Polarisation: bipolar
Kind of package: Ammo Pack
Mounting: THT
Case: TO92
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92
Collector-emitter voltage: 400V
Current gain: 5...25
Collector current: 1.5A
Type of transistor: NPN
Power dissipation: 2.1W
Polarisation: bipolar
Kind of package: Ammo Pack
Mounting: THT
Case: TO92
товару немає в наявності
В кошику
од. на суму грн.
PHE13003C,412 |
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Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92
Collector-emitter voltage: 400V
Current gain: 5...25
Collector current: 1.5A
Type of transistor: NPN
Power dissipation: 2.1W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO92
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 2.1W; TO92
Collector-emitter voltage: 400V
Current gain: 5...25
Collector current: 1.5A
Type of transistor: NPN
Power dissipation: 2.1W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO92
товару немає в наявності
В кошику
од. на суму грн.
BT139-600,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
на замовлення 685 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 72.45 грн |
11+ | 35.01 грн |
30+ | 30.58 грн |
81+ | 28.90 грн |
250+ | 28.29 грн |
500+ | 27.75 грн |
BT139-600E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
на замовлення 857 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 96.33 грн |
10+ | 59.86 грн |
25+ | 51.14 грн |
30+ | 30.66 грн |
81+ | 29.05 грн |
BT139-600E/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10/25mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Technology: 4Q
на замовлення 945 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 38.22 грн |
27+ | 33.64 грн |
74+ | 32.11 грн |
500+ | 31.34 грн |
BT139-800,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Max. forward impulse current: 155A
Gate current: 35/70mA
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Max. forward impulse current: 155A
Gate current: 35/70mA
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
на замовлення 1284 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 69.98 грн |
10+ | 54.28 грн |
25+ | 49.08 грн |
31+ | 29.51 грн |
84+ | 27.90 грн |
BT139-800E,127 |
![]() ![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Max. forward impulse current: 155A
Gate current: 10/25mA
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 10/25mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Max. forward impulse current: 155A
Gate current: 10/25mA
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
на замовлення 885 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 82.33 грн |
10+ | 45.72 грн |
30+ | 30.81 грн |
80+ | 29.13 грн |
500+ | 27.98 грн |
BT139-800G,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Max. forward impulse current: 155A
Gate current: 50/100mA
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Mounting: THT
Case: TO220AB
Max. forward impulse current: 155A
Gate current: 50/100mA
Kind of package: tube
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
на замовлення 924 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 78.21 грн |
10+ | 51.53 грн |
30+ | 30.81 грн |
80+ | 29.13 грн |
BT139B-600,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35/70mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 155A
Gate current: 35/70mA
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 35/70mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 155A
Gate current: 35/70mA
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
на замовлення 314 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 69.98 грн |
10+ | 54.51 грн |
28+ | 32.41 грн |
76+ | 30.58 грн |
BT139B-600E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10/25mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 155A
Gate current: 10/25mA
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10/25mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 155A
Gate current: 10/25mA
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
на замовлення 12 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
10+ | 40.90 грн |
BT139B-600F,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25/70mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 155A
Gate current: 25/70mA
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 25/70mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 155A
Gate current: 25/70mA
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
товару немає в наявності
В кошику
од. на суму грн.
BT139B-600G,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50/100mA; Ifsm: 155A; 4Q
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 155A
Gate current: 50/100mA
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 50/100mA; Ifsm: 155A; 4Q
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 155A
Gate current: 50/100mA
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
товару немає в наявності
В кошику
од. на суму грн.
BT139B-800,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35/70mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 155A
Gate current: 35/70mA
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 35/70mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 155A
Gate current: 35/70mA
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
на замовлення 357 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
9+ | 44.34 грн |
25+ | 39.75 грн |
28+ | 32.87 грн |
75+ | 31.11 грн |
BT139B-800E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 10/25mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 155A
Gate current: 10/25mA
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 10/25mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 155A
Gate current: 10/25mA
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
на замовлення 912 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
10+ | 42.05 грн |
25+ | 37.00 грн |
29+ | 31.57 грн |
78+ | 29.82 грн |
500+ | 28.67 грн |
BT139B-800F,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 25/70mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 155A
Gate current: 25/70mA
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 25/70mA; Ifsm: 155A; 4Q; sensitive gate
Mounting: SMD
Case: D2PAK
Max. forward impulse current: 155A
Gate current: 25/70mA
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Technology: 4Q
Max. load current: 16A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
товару немає в наявності
В кошику
од. на суму грн.