Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5620) > Сторінка 92 з 94
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BYW29E-200,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 88A Case: SOD59; TO220AC Max. forward voltage: 0.8V Reverse recovery time: 25ns Heatsink thickness: 1.15...1.4mm |
на замовлення 1669 шт: термін постачання 14-30 дні (днів) |
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BYW29EX-200,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2 Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 88A Case: SOD113; TO220FP-2 Max. forward voltage: 0.8V Reverse recovery time: 25ns |
на замовлення 2338 шт: термін постачання 14-30 дні (днів) |
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BYW29E-100,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 8A; tube; Ifsm: 88A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 88A Case: SOD59; TO220AC Max. forward voltage: 0.895V Reverse recovery time: 25ns |
на замовлення 517 шт: термін постачання 14-30 дні (днів) |
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BYW29E-150,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 150V; 8A; tube; Ifsm: 88A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 88A Case: SOD59; TO220AC Max. forward voltage: 0.8V Reverse recovery time: 25ns Heatsink thickness: 1.15...1.4mm |
на замовлення 581 шт: термін постачання 14-30 дні (днів) |
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BYV44-500,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: SOT78; TO220AB Max. forward voltage: 1.15V Max. load current: 30A Heatsink thickness: max. 1.3mm Reverse recovery time: 60ns |
на замовлення 171 шт: термін постачання 14-30 дні (днів) |
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| SMBJ26AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 29.12...31.67V Max. forward impulse current: 14.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ACT108-600E,126 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT Max. off-state voltage: 0.6kV Type of thyristor: AC switch Kind of package: Ammo Pack Case: TO92 Features of semiconductor devices: internally triggered Mounting: THT Gate current: 10mA Max. load current: 0.8A |
на замовлення 1549 шт: термін постачання 14-30 дні (днів) |
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| ACT108-600D,126 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT Type of thyristor: AC switch Max. off-state voltage: 0.6kV Max. load current: 0.8A Gate current: 5mA Case: TO92 Mounting: THT Features of semiconductor devices: internally triggered Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ACT108-600D,412 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT; bulk Type of thyristor: AC switch Max. off-state voltage: 0.6kV Max. load current: 0.8A Gate current: 5mA Case: TO92 Mounting: THT Features of semiconductor devices: internally triggered Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ACT108-600E,412 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT; bulk Type of thyristor: AC switch Max. off-state voltage: 0.6kV Max. load current: 0.8A Gate current: 10mA Case: TO92 Mounting: THT Features of semiconductor devices: internally triggered Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| P1KSMBJ68CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 10.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P1KSMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| P1KSMBJ68AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1kW; 68V; 10.9A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 10.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P1KSMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BYT79-500,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 14A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 130A Case: SOD59; TO220AC Max. forward voltage: 0.9V Reverse recovery time: 60ns |
на замовлення 202 шт: термін постачання 14-30 дні (днів) |
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| WTMH80T16RT | WeEn Semiconductors |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.6kV; 80A; Ifmax: 125A; TO240AA Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 80A Max. load current: 125A Case: TO240AA Max. forward voltage: 1.29V Threshold on-voltage: 0.95V Max. forward impulse current: 1.4kA Gate current: 100mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BTA225B-600B,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 25A Case: D2PAK Gate current: 50mA Technology: 3Q; Hi-Com Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Max. forward impulse current: 190A |
на замовлення 4115 шт: термін постачання 14-30 дні (днів) |
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BTA225B-800B,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: D2PAK Gate current: 50mA Technology: 3Q; Hi-Com Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Max. forward impulse current: 190A |
на замовлення 489 шт: термін постачання 14-30 дні (днів) |
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BTA225-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220AB Gate current: 50mA Technology: 3Q; Hi-Com Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Max. forward impulse current: 190A |
на замовлення 69 шт: термін постачання 14-30 дні (днів) |
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BTA203-800CTEP | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 3A; TO92; Igt: 30mA; Ifsm: 27A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 3A Case: TO92 Gate current: 30mA Max. forward impulse current: 27A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk |
на замовлення 11 шт: термін постачання 14-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BTA225-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 25A Case: TO220AB Gate current: 50mA Technology: 3Q; Hi-Com Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Max. forward impulse current: 190A |
на замовлення 1046 шт: термін постачання 14-30 дні (днів) |
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BTA206X-800CT/DGQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 6A Case: TO220AB Gate current: 35mA Max. forward impulse current: 66A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
на замовлення 642 шт: термін постачання 14-30 дні (днів) |
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BT155K-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1259,TO3P; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: SOT1259; TO3P Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs |
на замовлення 300 шт: термін постачання 14-30 дні (днів) |
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BT155W-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: SOT429; TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs |
на замовлення 344 шт: термін постачання 14-30 дні (днів) |
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BT155Z-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: SOT1292; TOP3I Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs |
на замовлення 297 шт: термін постачання 14-30 дні (днів) |
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BT155W-1200T-AQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 3mA Case: SOT429; TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs Application: automotive industry |
на замовлення 96 шт: термін постачання 14-30 дні (днів) |
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BT158W-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 126A Load current: 80A Gate current: 70mA Case: SOT429; TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 1.1kA Turn-on time: 2µs |
на замовлення 208 шт: термін постачання 14-30 дні (днів) |
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BT150S-600R,118 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 4A Load current: 2.5A Gate current: 15µA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 35A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| WNSC2D201200CW6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.65V Max. load current: 20A Max. forward impulse current: 80A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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WNS30H100CBJ | WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 15A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.67V Max. load current: 30A Max. forward impulse current: 330A Kind of package: reel; tape |
на замовлення 168 шт: термін постачання 14-30 дні (днів) |
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WNS30H100CQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.67V Max. load current: 30A Max. forward impulse current: 330A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PHE13005,127 | WeEn Semiconductors |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB Mounting: THT Type of transistor: NPN Case: TO220AB Power dissipation: 75W Collector current: 4A Current gain: 10...40 Collector-emitter voltage: 400V Kind of package: tube Polarisation: bipolar |
на замовлення 508 шт: термін постачання 14-30 дні (днів) |
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BT148-400R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 400V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube Mounting: THT Case: SIP3; SOT82 Type of thyristor: thyristor Turn-on time: 2µs Gate current: 15µA Load current: 2.5A Max. load current: 4A Max. forward impulse current: 35A Max. off-state voltage: 0.4kV Kind of package: tube |
на замовлення 990 шт: термін постачання 14-30 дні (днів) |
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BT148-500R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube Mounting: THT Case: SIP3; SOT82 Type of thyristor: thyristor Turn-on time: 2µs Gate current: 15µA Load current: 2.5A Max. load current: 4A Max. forward impulse current: 35A Max. off-state voltage: 500V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BT138-800.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 35/70mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 95A Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NXPSC206506Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. forward impulse current: 100A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NXPSC20650W-AQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2.1V Max. load current: 20A Max. forward impulse current: 50A Kind of package: tube Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NXPSC20650W6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: tube Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| WNSC6D20650B6J | WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.8V Max. forward impulse current: 120A Kind of package: reel; tape Max. load current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NXPLQSC20650W6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.85V Max. load current: 20A Max. forward impulse current: 48A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WNSC2D20650CJQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: SOT1293; TO3PF Max. forward voltage: 1.8V Max. forward impulse current: 50A Kind of package: tube Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WNSC2D20650CWQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 50A Kind of package: tube Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WNSC6D20650WQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.4V Max. forward impulse current: 155A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ACT102H-600D,118 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.2A; Igt: 5mA; SO8; SMD Type of thyristor: AC switch Max. load current: 0.2A Case: SO8 Mounting: SMD Kind of package: reel; tape Gate current: 5mA Max. off-state voltage: 0.6kV Features of semiconductor devices: internally triggered |
на замовлення 1257 шт: термін постачання 14-30 дні (днів) |
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BTA2008-800E,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Case: TO92 Type of thyristor: triac Gate current: 10mA Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BTA2008-1000D,126 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9.9A; 3Q,Hi-Com Features of semiconductor devices: logic level; sensitive gate Mounting: THT Case: TO92 Type of thyristor: triac Gate current: 5mA Max. load current: 0.8A Max. forward impulse current: 9.9A Max. off-state voltage: 1kV Technology: 3Q; Hi-Com Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BTA2008-1000DNML | WeEn Semiconductors |
Category: TriacsDescription: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com Features of semiconductor devices: logic level; sensitive gate Mounting: THT Case: TO92 Type of thyristor: triac Gate current: 5mA Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 1kV Technology: 3Q; Hi-Com Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BTA2008-600D,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Case: TO92 Type of thyristor: triac Gate current: 5mA Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.6kV Technology: 3Q; Hi-Com Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
BTA2008-600E,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Case: TO92 Type of thyristor: triac Gate current: 10mA Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.6kV Technology: 3Q; Hi-Com Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BTA2008-800D,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Case: TO92 Type of thyristor: triac Gate current: 5mA Max. load current: 0.8A Max. forward impulse current: 9A Max. off-state voltage: 0.6kV Technology: 3Q; Hi-Com Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BT137X-600/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
BTA425Z-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Case: SOT1292; TO3P Mounting: THT Type of thyristor: triac Gate current: 50mA Features of semiconductor devices: high temperature; sensitive gate Max. load current: 25A Max. forward impulse current: 250A Kind of package: tube Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
на замовлення 530 шт: термін постачання 14-30 дні (днів) |
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BTA425Y-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Case: TO220AB Mounting: THT Type of thyristor: triac Gate current: 50mA Features of semiconductor devices: high temperature; sensitive gate Max. load current: 25A Max. forward impulse current: 250A Kind of package: tube Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
на замовлення 913 шт: термін постачання 14-30 дні (днів) |
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BTA425X-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Case: TO220FP Mounting: THT Type of thyristor: triac Gate current: 50mA Features of semiconductor devices: sensitive gate Max. load current: 25A Max. forward impulse current: 250A Kind of package: tube Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
на замовлення 377 шт: термін постачання 14-30 дні (днів) |
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BTA420X-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220FP; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com Case: TO220FP Mounting: THT Type of thyristor: triac Gate current: 50mA Features of semiconductor devices: high temperature; sensitive gate Max. load current: 20A Max. forward impulse current: 200A Kind of package: tube Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
на замовлення 323 шт: термін постачання 14-30 дні (днів) |
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| BT300S-600R,118 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 2mA; DPAK; SMD; reel,tape; 2us Kind of package: reel; tape Load current: 5A Max. load current: 8A Max. forward impulse current: 65A Max. off-state voltage: 0.6kV Case: DPAK Mounting: SMD Type of thyristor: thyristor Turn-on time: 2µs Gate current: 2mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
BYC10-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 65A Case: SOD59; TO220AC Max. forward voltage: 1.4V Reverse recovery time: 19ns |
на замовлення 237 шт: термін постачання 14-30 дні (днів) |
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BTA420-800CT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com Mounting: THT Case: TO220AB Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 35mA Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BTA420X-800CT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com Mounting: THT Case: TO220FP Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 35mA Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BTA420-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com Mounting: THT Case: TO220AB Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 50mA Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BTA420X-800CT/L02Q | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com Mounting: THT Case: TO220FP Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 35mA Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BTA420Y-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com Mounting: THT Case: TO220AB Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 50mA Max. load current: 20A Max. forward impulse current: 220A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. |
| BYW29E-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
на замовлення 1669 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 90.59 грн |
| 250+ | 37.43 грн |
| 500+ | 35.08 грн |
| BYW29EX-200,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 88A; SOD113,TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD113; TO220FP-2
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
на замовлення 2338 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 84.25 грн |
| 10+ | 54.93 грн |
| 50+ | 46.69 грн |
| 100+ | 43.24 грн |
| 250+ | 38.78 грн |
| 500+ | 35.41 грн |
| 1000+ | 31.96 грн |
| 2000+ | 28.60 грн |
| BYW29E-100,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.895V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.895V
Reverse recovery time: 25ns
на замовлення 517 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.45 грн |
| 15+ | 29.95 грн |
| 25+ | 26.41 грн |
| 100+ | 25.15 грн |
| BYW29E-150,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 8A; tube; Ifsm: 88A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 88A
Case: SOD59; TO220AC
Max. forward voltage: 0.8V
Reverse recovery time: 25ns
Heatsink thickness: 1.15...1.4mm
на замовлення 581 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.94 грн |
| 10+ | 43.57 грн |
| 12+ | 35.16 грн |
| 25+ | 27.25 грн |
| 50+ | 23.72 грн |
| 100+ | 23.38 грн |
| BYV44-500,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
на замовлення 171 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 93.31 грн |
| 6+ | 79.91 грн |
| 10+ | 66.45 грн |
| 25+ | 56.36 грн |
| SMBJ26AJ |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| ACT108-600E,126 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT
Max. off-state voltage: 0.6kV
Type of thyristor: AC switch
Kind of package: Ammo Pack
Case: TO92
Features of semiconductor devices: internally triggered
Mounting: THT
Gate current: 10mA
Max. load current: 0.8A
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT
Max. off-state voltage: 0.6kV
Type of thyristor: AC switch
Kind of package: Ammo Pack
Case: TO92
Features of semiconductor devices: internally triggered
Mounting: THT
Gate current: 10mA
Max. load current: 0.8A
на замовлення 1549 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.96 грн |
| 50+ | 8.58 грн |
| 100+ | 8.16 грн |
| 500+ | 7.82 грн |
| 1000+ | 7.49 грн |
| ACT108-600D,126 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: Ammo Pack
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: Ammo Pack
товару немає в наявності
В кошику
од. на суму грн.
| ACT108-600D,412 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT; bulk
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: bulk
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; TO92; THT; bulk
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| ACT108-600E,412 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT; bulk
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 10mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: bulk
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT; bulk
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 10mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| P1KSMBJ68CAJ |
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Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
товару немає в наявності
В кошику
од. на суму грн.
| P1KSMBJ68AJ |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
товару немає в наявності
В кошику
од. на суму грн.
| BYT79-500,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 14A; tube; Ifsm: 130A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 14A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 130A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Reverse recovery time: 60ns
на замовлення 202 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.48 грн |
| WTMH80T16RT |
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Виробник: WeEn Semiconductors
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 80A; Ifmax: 125A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 80A
Max. load current: 125A
Case: TO240AA
Max. forward voltage: 1.29V
Threshold on-voltage: 0.95V
Max. forward impulse current: 1.4kA
Gate current: 100mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 80A; Ifmax: 125A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 80A
Max. load current: 125A
Case: TO240AA
Max. forward voltage: 1.29V
Threshold on-voltage: 0.95V
Max. forward impulse current: 1.4kA
Gate current: 100mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| BTA225B-600B,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Category: Triacs
Description: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
на замовлення 4115 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 181.18 грн |
| 10+ | 110.19 грн |
| 100+ | 80.75 грн |
| 500+ | 64.77 грн |
| 800+ | 60.56 грн |
| 1000+ | 58.88 грн |
| 1600+ | 54.68 грн |
| 3200+ | 52.99 грн |
| BTA225B-800B,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
на замовлення 489 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 173.02 грн |
| 10+ | 86.64 грн |
| 100+ | 72.34 грн |
| BTA225-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
на замовлення 69 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 177.55 грн |
| 10+ | 98.42 грн |
| 50+ | 80.75 грн |
| BTA203-800CTEP |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 3A; TO92; Igt: 30mA; Ifsm: 27A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 3A
Case: TO92
Gate current: 30mA
Max. forward impulse current: 27A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 3A; TO92; Igt: 30mA; Ifsm: 27A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 3A
Case: TO92
Gate current: 30mA
Max. forward impulse current: 27A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
на замовлення 11 шт:
термін постачання 14-30 дні (днів)В кошику од. на суму грн.
| BTA225-600B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
на замовлення 1046 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 96.02 грн |
| 10+ | 72.34 грн |
| 50+ | 65.61 грн |
| 100+ | 63.09 грн |
| 250+ | 58.88 грн |
| 500+ | 56.36 грн |
| BTA206X-800CT/DGQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
на замовлення 642 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.00 грн |
| 10+ | 43.57 грн |
| 50+ | 33.06 грн |
| 100+ | 29.44 грн |
| 250+ | 25.82 грн |
| 500+ | 24.06 грн |
| BT155K-1200TQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1259,TO3P; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1259; TO3P
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1259,TO3P; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1259; TO3P
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
на замовлення 300 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 171.21 грн |
| 5+ | 139.64 грн |
| 30+ | 126.18 грн |
| 120+ | 117.76 грн |
| BT155W-1200TQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
на замовлення 344 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 275.39 грн |
| 10+ | 174.96 грн |
| 30+ | 148.89 грн |
| 120+ | 124.49 грн |
| 240+ | 121.13 грн |
| BT155Z-1200TQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1292; TOP3I
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1292; TOP3I
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
на замовлення 297 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 220.13 грн |
| 5+ | 166.55 грн |
| 25+ | 158.98 грн |
| 90+ | 134.59 грн |
| BT155W-1200T-AQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 3mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Application: automotive industry
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 3mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Application: automotive industry
на замовлення 96 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 274.48 грн |
| 10+ | 222.91 грн |
| 25+ | 204.41 грн |
| BT158W-1200TQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 70mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.1kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 70mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.1kA
Turn-on time: 2µs
на замовлення 208 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 444.79 грн |
| 10+ | 278.43 грн |
| 30+ | 238.89 грн |
| 90+ | 236.37 грн |
| BT150S-600R,118 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 35A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 35A
Turn-on time: 2µs
товару немає в наявності
В кошику
од. на суму грн.
| WNSC2D201200CW6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.65V
Max. load current: 20A
Max. forward impulse current: 80A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.65V
Max. load current: 20A
Max. forward impulse current: 80A
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| WNS30H100CBJ |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: reel; tape
на замовлення 168 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 105.08 грн |
| 10+ | 62.33 грн |
| 100+ | 41.64 грн |
| WNS30H100CQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| PHE13005,127 |
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Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Mounting: THT
Type of transistor: NPN
Case: TO220AB
Power dissipation: 75W
Collector current: 4A
Current gain: 10...40
Collector-emitter voltage: 400V
Kind of package: tube
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Mounting: THT
Type of transistor: NPN
Case: TO220AB
Power dissipation: 75W
Collector current: 4A
Current gain: 10...40
Collector-emitter voltage: 400V
Kind of package: tube
Polarisation: bipolar
на замовлення 508 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.45 грн |
| 13+ | 33.14 грн |
| 50+ | 23.47 грн |
| 100+ | 20.44 грн |
| 500+ | 15.48 грн |
| BT148-400R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Case: SIP3; SOT82
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 15µA
Load current: 2.5A
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 0.4kV
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Case: SIP3; SOT82
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 15µA
Load current: 2.5A
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 0.4kV
Kind of package: tube
на замовлення 990 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 44.39 грн |
| 13+ | 33.06 грн |
| 50+ | 26.75 грн |
| 100+ | 24.39 грн |
| 500+ | 19.77 грн |
| BT148-500R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Case: SIP3; SOT82
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 15µA
Load current: 2.5A
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 500V
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Case: SIP3; SOT82
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 15µA
Load current: 2.5A
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 500V
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BT138-800.127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
товару немає в наявності
В кошику
од. на суму грн.
| NXPSC206506Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
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| NXPSC20650W-AQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. load current: 20A
Max. forward impulse current: 50A
Kind of package: tube
Application: automotive industry
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| NXPSC20650W6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
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| WNSC6D20650B6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
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| NXPLQSC20650W6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. load current: 20A
Max. forward impulse current: 48A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. load current: 20A
Max. forward impulse current: 48A
Kind of package: tube
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| WNSC2D20650CJQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
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| WNSC2D20650CWQ |
![]() |
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
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| WNSC6D20650WQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
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| ACT102H-600D,118 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.2A; Igt: 5mA; SO8; SMD
Type of thyristor: AC switch
Max. load current: 0.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Gate current: 5mA
Max. off-state voltage: 0.6kV
Features of semiconductor devices: internally triggered
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.2A; Igt: 5mA; SO8; SMD
Type of thyristor: AC switch
Max. load current: 0.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Gate current: 5mA
Max. off-state voltage: 0.6kV
Features of semiconductor devices: internally triggered
на замовлення 1257 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.49 грн |
| 35+ | 12.37 грн |
| 36+ | 11.78 грн |
| 38+ | 11.27 грн |
| BTA2008-800E,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 10mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 10mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Kind of package: bulk
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| BTA2008-1000D,126 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9.9A; 3Q,Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9.9A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Kind of package: Ammo Pack
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9.9A; 3Q,Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9.9A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Kind of package: Ammo Pack
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| BTA2008-1000DNML |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Kind of package: Ammo Pack
Category: Triacs
Description: Triac; 1kV; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: logic level; sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 1kV
Technology: 3Q; Hi-Com
Kind of package: Ammo Pack
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| BTA2008-600D,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
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| BTA2008-600E,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 10mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 10mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 10mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
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| BTA2008-800D,412 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 0.8A; TO92; Igt: 5mA; Ifsm: 9A; 3Q,Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Case: TO92
Type of thyristor: triac
Gate current: 5mA
Max. load current: 0.8A
Max. forward impulse current: 9A
Max. off-state voltage: 0.6kV
Technology: 3Q; Hi-Com
Kind of package: bulk
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| BT137X-600/DG,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BTA425Z-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 25A
Max. forward impulse current: 250A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 25A
Max. forward impulse current: 250A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
на замовлення 530 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 211.07 грн |
| 10+ | 127.86 грн |
| 30+ | 105.15 грн |
| 150+ | 84.12 грн |
| BTA425Y-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 25A
Max. forward impulse current: 250A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 25A
Max. forward impulse current: 250A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
на замовлення 913 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 142.22 грн |
| 10+ | 80.75 грн |
| 25+ | 74.02 грн |
| 50+ | 69.82 грн |
| 100+ | 64.77 грн |
| 250+ | 59.72 грн |
| 500+ | 58.88 грн |
| BTA425X-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Max. load current: 25A
Max. forward impulse current: 250A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Max. load current: 25A
Max. forward impulse current: 250A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
на замовлення 377 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.91 грн |
| 7+ | 64.77 грн |
| 25+ | 57.20 грн |
| 100+ | 56.36 грн |
| BTA420X-800BT,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 20A
Max. forward impulse current: 200A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 20A
Max. forward impulse current: 200A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
на замовлення 323 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 131.35 грн |
| 10+ | 73.86 грн |
| 50+ | 58.13 грн |
| 100+ | 52.74 грн |
| BT300S-600R,118 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 2mA; DPAK; SMD; reel,tape; 2us
Kind of package: reel; tape
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
Case: DPAK
Mounting: SMD
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 2mA
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 2mA; DPAK; SMD; reel,tape; 2us
Kind of package: reel; tape
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
Case: DPAK
Mounting: SMD
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 2mA
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| BYC10-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
на замовлення 237 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.09 грн |
| 10+ | 52.66 грн |
| 25+ | 45.42 грн |
| 50+ | 40.88 грн |
| 100+ | 37.26 грн |
| BTA420-800CT,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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| BTA420X-800CT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
| BTA420-800BT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
| BTA420X-800CT/L02Q |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
| BTA420Y-800BT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 220A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 220A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
















