Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (5754) > Сторінка 92 з 96
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BTA316X-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 191 шт: термін постачання 14-30 дні (днів) |
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BTA216X-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 832 шт: термін постачання 14-30 дні (днів) |
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BTA316-600ET,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
на замовлення 158 шт: термін постачання 14-30 дні (днів) |
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BTA316-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 11 шт: термін постачання 14-30 дні (днів) |
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BT138X-800F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220FP Gate current: 25/70mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTA316X-800B,127 | WeEn Semiconductors |
Category: Triacs Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 288 шт: термін постачання 14-30 дні (днів) |
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BTA316B-800B,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: D2PAK Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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ACT108-800EQP | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 800V; Ifmax: 0.8A; Igt: 10mA; TO92; THT Type of thyristor: AC switch Max. off-state voltage: 0.8kV Max. load current: 0.8A Gate current: 10mA Case: TO92 Mounting: THT Features of semiconductor devices: internally triggered Kind of package: reel; tape |
на замовлення 9232 шт: термін постачання 14-30 дні (днів) |
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BT148W-600R,115 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 1A; 0.6A; Igt: 50uA; SOT223; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 50µA Max. forward impulse current: 10A Mounting: SMD Kind of package: reel; tape Turn-on time: 2µs Load current: 0.6A |
на замовлення 4598 шт: термін постачання 14-30 дні (днів) |
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BT139-600.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 35/70mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 155A Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BYW29ED-200,118 | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DPAK Max. forward voltage: 0.8V Max. forward impulse current: 80A Kind of package: reel; tape |
на замовлення 689 шт: термін постачання 14-30 дні (днів) |
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BYV44-500,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 150A Case: SOT78; TO220AB Max. forward voltage: 1.15V Max. load current: 30A Heatsink thickness: max. 1.3mm Reverse recovery time: 60ns |
на замовлення 118 шт: термін постачання 14-30 дні (днів) |
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| SMBJ26AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 29.12...31.67V Max. forward impulse current: 14.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||
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ACT108-600E,126 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT Type of thyristor: AC switch Max. off-state voltage: 0.6kV Max. load current: 0.8A Gate current: 10mA Case: TO92 Mounting: THT Features of semiconductor devices: internally triggered Kind of package: Ammo Pack |
на замовлення 1539 шт: термін постачання 14-30 дні (днів) |
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| P1KSMBJ68AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1kW; 68V; 10.9A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 58.1V Breakdown voltage: 68V Max. forward impulse current: 10.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P1KSMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BTA225B-600B,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 25A Case: D2PAK Gate current: 50mA Technology: 3Q; Hi-Com Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Max. forward impulse current: 190A |
на замовлення 4075 шт: термін постачання 14-30 дні (днів) |
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BTA225B-800B,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: D2PAK Gate current: 50mA Technology: 3Q; Hi-Com Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: sensitive gate Max. forward impulse current: 190A |
на замовлення 502 шт: термін постачання 14-30 дні (днів) |
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BTA225-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220AB Gate current: 50mA Max. forward impulse current: 190A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 26 шт: термін постачання 14-30 дні (днів) |
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BTA203-800CTEP | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 3A; TO92; Igt: 30mA; Ifsm: 27A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 3A Case: TO92 Gate current: 30mA Max. forward impulse current: 27A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk |
на замовлення 11 шт: термін постачання 14-30 дні (днів) |
Мінімальне замовлення: 11 шт В кошику од. на суму грн. | ||||||||||||||||
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BTA225-600B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 25A Case: TO220AB Gate current: 50mA Technology: 3Q; Hi-Com Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Max. forward impulse current: 190A |
на замовлення 1041 шт: термін постачання 14-30 дні (днів) |
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BTA206X-800CT/DGQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 6A Case: TO220AB Gate current: 35mA Max. forward impulse current: 66A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature Mounting: THT Kind of package: tube |
на замовлення 638 шт: термін постачання 14-30 дні (днів) |
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BT155K-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1259,TO3P; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: SOT1259; TO3P Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs |
на замовлення 190 шт: термін постачання 14-30 дні (днів) |
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BT155W-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: SOT429; TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs |
на замовлення 332 шт: термін постачання 14-30 дні (днів) |
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BT155Z-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 50mA Case: SOT1292; TOP3I Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs |
на замовлення 287 шт: термін постачання 14-30 дні (днів) |
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BT155W-1200T-AQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 79A Load current: 50A Gate current: 3mA Case: SOT429; TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 0.65kA Turn-on time: 2µs Application: automotive industry |
на замовлення 96 шт: термін постачання 14-30 дні (днів) |
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BT158W-1200TQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 126A Load current: 80A Gate current: 70mA Case: SOT429; TO247-3 Mounting: THT Kind of package: tube Max. forward impulse current: 1.1kA Turn-on time: 2µs |
на замовлення 203 шт: термін постачання 14-30 дні (днів) |
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BT150S-600R,118 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 4A Load current: 2.5A Gate current: 15µA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 35A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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WNS30H100CBJ | WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 0.1kV Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.67V Max. load current: 30A Max. forward impulse current: 330A Kind of package: reel; tape |
на замовлення 168 шт: термін постачання 14-30 дні (днів) |
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PHE13005,127 | WeEn Semiconductors |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB Mounting: THT Type of transistor: NPN Case: TO220AB Power dissipation: 75W Collector current: 4A Current gain: 10...40 Collector-emitter voltage: 400V Kind of package: tube Polarisation: bipolar |
на замовлення 2465 шт: термін постачання 14-30 дні (днів) |
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BT148-400R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 400V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube Mounting: THT Case: SIP3; SOT82 Kind of package: tube Type of thyristor: thyristor Turn-on time: 2µs Gate current: 15µA Load current: 2.5A Max. load current: 4A Max. forward impulse current: 35A Max. off-state voltage: 0.4kV |
на замовлення 990 шт: термін постачання 14-30 дні (днів) |
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BT148-500R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube Mounting: THT Case: SIP3; SOT82 Type of thyristor: thyristor Turn-on time: 2µs Gate current: 15µA Load current: 2.5A Max. load current: 4A Max. forward impulse current: 35A Max. off-state voltage: 500V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BT138-800.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 35/70mA Mounting: THT Kind of package: tube Technology: 4Q Max. forward impulse current: 95A Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
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NXPSC206506Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. forward impulse current: 100A Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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NXPSC20650W-AQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2.1V Max. forward impulse current: 50A Kind of package: tube Max. load current: 20A Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | ||||||||||||||||
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NXPSC20650W6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: tube Max. load current: 20A |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | ||||||||||||||||
| WNSC6D20650B6J | WeEn Semiconductors |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.8V Max. forward impulse current: 120A Kind of package: reel; tape Max. load current: 40A |
на замовлення 784 шт: термін постачання 14-30 дні (днів) |
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NXPLQSC20650W6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.85V Max. forward impulse current: 48A Kind of package: tube Max. load current: 20A |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | ||||||||||||||||
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WNSC2D20650CJQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: SOT1293; TO3PF Max. forward voltage: 1.8V Max. forward impulse current: 50A Kind of package: tube Max. load current: 20A |
товару немає в наявності |
Мінімальне замовлення: 2400 шт В кошику од. на суму грн. | ||||||||||||||||
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WNSC2D20650CWQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 50A Kind of package: tube Max. load current: 20A |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | ||||||||||||||||
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WNSC6D20650WQ | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1.4V Max. forward impulse current: 155A Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||||||||
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ACT102H-600D,118 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.2A; Igt: 5mA; SO8; SMD Type of thyristor: AC switch Max. load current: 0.2A Case: SO8 Mounting: SMD Kind of package: reel; tape Gate current: 5mA Max. off-state voltage: 0.6kV Features of semiconductor devices: internally triggered |
на замовлення 1234 шт: термін постачання 14-30 дні (днів) |
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| BT137X-600/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BTA425Z-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Case: SOT1292; TO3P Mounting: THT Type of thyristor: triac Gate current: 50mA Features of semiconductor devices: high temperature; sensitive gate Max. load current: 25A Max. forward impulse current: 250A Kind of package: tube Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
на замовлення 520 шт: термін постачання 14-30 дні (днів) |
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BTA425Y-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Case: TO220AB Mounting: THT Type of thyristor: triac Gate current: 50mA Features of semiconductor devices: high temperature; sensitive gate Max. load current: 25A Max. forward impulse current: 250A Kind of package: tube Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
на замовлення 913 шт: термін постачання 14-30 дні (днів) |
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BTA425X-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com Case: TO220FP Mounting: THT Type of thyristor: triac Gate current: 50mA Features of semiconductor devices: sensitive gate Max. load current: 25A Max. forward impulse current: 250A Kind of package: tube Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
на замовлення 377 шт: термін постачання 14-30 дні (днів) |
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BTA420X-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220FP; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com Case: TO220FP Mounting: THT Type of thyristor: triac Gate current: 50mA Features of semiconductor devices: high temperature; sensitive gate Max. load current: 20A Max. forward impulse current: 200A Kind of package: tube Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
на замовлення 313 шт: термін постачання 14-30 дні (днів) |
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| BT300S-600R,118 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 2mA; DPAK; SMD; reel,tape; 2us Kind of package: reel; tape Load current: 5A Max. load current: 8A Max. forward impulse current: 65A Max. off-state voltage: 0.6kV Case: DPAK Mounting: SMD Type of thyristor: thyristor Turn-on time: 2µs Gate current: 2mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BYC10-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tube Max. forward impulse current: 65A Case: SOD59; TO220AC Max. forward voltage: 1.4V Reverse recovery time: 19ns |
на замовлення 229 шт: термін постачання 14-30 дні (днів) |
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BTA420-800CT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com Mounting: THT Case: TO220AB Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 35mA Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTA420X-800CT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com Mounting: THT Case: TO220FP Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 35mA Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BTA420-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com Mounting: THT Case: TO220AB Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 50mA Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BTA420X-800CT/L02Q | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com Mounting: THT Case: TO220FP Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 35mA Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BTA420Y-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com Mounting: THT Case: TO220AB Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 50mA Max. load current: 20A Max. forward impulse current: 220A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BTA420Y-800CT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com Mounting: THT Case: TO220AB Kind of package: tube Features of semiconductor devices: high temperature; sensitive gate Type of thyristor: triac Gate current: 35mA Max. load current: 20A Max. forward impulse current: 200A Max. off-state voltage: 0.8kV Technology: 3Q; Hi-Com |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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BT137-800.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 35/70mA Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate Max. forward impulse current: 65A Technology: 4Q |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
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MURS360BJ | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A Type of diode: rectifying Max. off-state voltage: 0.6kV Load current: 3A Case: SMB Max. forward voltage: 0.88V Max. forward impulse current: 100A Features of semiconductor devices: ultrafast switching Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 50ns Kind of package: reel; tape |
на замовлення 2149 шт: термін постачання 14-30 дні (днів) |
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BT137X-800.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220FP Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Mounting: THT Kind of package: tube Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| WSJM65R099DQ | WeEn Semiconductors |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 128A Power dissipation: 240W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
| WSJM65R099DTLJ | WeEn Semiconductors |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 100A Power dissipation: 147W Case: TOLL Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | |||||||||||||||||
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BTA316X-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 10mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1880 шт: термін постачання 14-30 дні (днів) |
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| BTA316X-600E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 191 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 57.03 грн |
| 10+ | 43.88 грн |
| 25+ | 35.55 грн |
| 100+ | 31.77 грн |
| BTA216X-600B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 832 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 76.03 грн |
| 10+ | 58.42 грн |
| 100+ | 48.83 грн |
| 250+ | 44.97 грн |
| 500+ | 42.19 грн |
| BTA316-600ET,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 158 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 99.57 грн |
| 10+ | 53.71 грн |
| 50+ | 43.20 грн |
| 100+ | 39.67 грн |
| BTA316-600B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 81.47 грн |
| 10+ | 44.46 грн |
| BT138X-800F,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 25/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA316X-800B,127 |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 288 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 57.03 грн |
| 9+ | 47.66 грн |
| 10+ | 42.19 грн |
| 30+ | 37.91 грн |
| 100+ | 35.81 грн |
| BTA316B-800B,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: D2PAK
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| ACT108-800EQP |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 0.8A; Igt: 10mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Gate current: 10mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 0.8A; Igt: 10mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Gate current: 10mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: reel; tape
на замовлення 9232 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 59.74 грн |
| 16+ | 27.57 грн |
| 25+ | 16.81 грн |
| 100+ | 14.88 грн |
| 500+ | 13.28 грн |
| 2000+ | 12.44 грн |
| BT148W-600R,115 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.6A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 50µA
Max. forward impulse current: 10A
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 2µs
Load current: 0.6A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 1A; 0.6A; Igt: 50uA; SOT223; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 50µA
Max. forward impulse current: 10A
Mounting: SMD
Kind of package: reel; tape
Turn-on time: 2µs
Load current: 0.6A
на замовлення 4598 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 53.41 грн |
| 14+ | 31.86 грн |
| 50+ | 24.04 грн |
| 100+ | 21.35 грн |
| 200+ | 18.91 грн |
| 500+ | 16.14 грн |
| 1000+ | 14.20 грн |
| 2000+ | 12.52 грн |
| BT139-600.127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 155A
Features of semiconductor devices: sensitive gate
товару немає в наявності
В кошику
од. на суму грн.
| BYW29ED-200,118 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Max. forward voltage: 0.8V
Max. forward impulse current: 80A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 25ns; DPAK; Ufmax: 0.8V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Max. forward voltage: 0.8V
Max. forward impulse current: 80A
Kind of package: reel; tape
на замовлення 689 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 59.74 грн |
| 11+ | 41.69 грн |
| 100+ | 31.77 грн |
| 500+ | 26.64 грн |
| BYV44-500,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 15Ax2; tube; Ifsm: 150A; SOT78,TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 150A
Case: SOT78; TO220AB
Max. forward voltage: 1.15V
Max. load current: 30A
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
на замовлення 118 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 93.23 грн |
| 6+ | 79.85 грн |
| 10+ | 66.40 грн |
| 25+ | 56.31 грн |
| SMBJ26AJ |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 29.12÷31.67V; 14.3A; unidirectional; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 29.12...31.67V
Max. forward impulse current: 14.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| ACT108-600E,126 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 10mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: Ammo Pack
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; TO92; THT
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 10mA
Case: TO92
Mounting: THT
Features of semiconductor devices: internally triggered
Kind of package: Ammo Pack
на замовлення 1539 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 50+ | 9.05 грн |
| 56+ | 7.56 грн |
| 100+ | 7.40 грн |
| P1KSMBJ68AJ |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1kW; 68V; 10.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 10.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P1KSMBJ
товару немає в наявності
В кошику
од. на суму грн.
| BTA225B-600B,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Category: Triacs
Description: Triac; 600V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
на замовлення 4075 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 181.03 грн |
| 10+ | 110.11 грн |
| 100+ | 80.69 грн |
| 500+ | 64.72 грн |
| 800+ | 60.52 грн |
| 1600+ | 58.84 грн |
| BTA225B-800B,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Category: Triacs
Description: Triac; 800V; 25A; D2PAK; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: D2PAK
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
на замовлення 502 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 172.89 грн |
| 10+ | 86.57 грн |
| 100+ | 72.28 грн |
| 500+ | 64.72 грн |
| BTA225-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 190A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 177.41 грн |
| 10+ | 98.34 грн |
| BTA203-800CTEP |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 3A; TO92; Igt: 30mA; Ifsm: 27A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 3A
Case: TO92
Gate current: 30mA
Max. forward impulse current: 27A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 800V; 3A; TO92; Igt: 30mA; Ifsm: 27A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 3A
Case: TO92
Gate current: 30mA
Max. forward impulse current: 27A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
| BTA225-600B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Category: Triacs
Description: Triac; 600V; 25A; TO220AB; Igt: 50mA; Ifsm: 190A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 25A
Case: TO220AB
Gate current: 50mA
Technology: 3Q; Hi-Com
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
на замовлення 1041 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 95.95 грн |
| 10+ | 72.28 грн |
| 50+ | 65.56 грн |
| 100+ | 63.04 грн |
| 250+ | 58.84 грн |
| 500+ | 56.31 грн |
| BTA206X-800CT/DGQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
на замовлення 638 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 82.37 грн |
| 10+ | 49.59 грн |
| 50+ | 35.13 грн |
| 100+ | 31.10 грн |
| 250+ | 27.23 грн |
| 500+ | 25.22 грн |
| BT155K-1200TQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1259,TO3P; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1259; TO3P
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1259,TO3P; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1259; TO3P
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
на замовлення 190 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 171.08 грн |
| 5+ | 139.53 грн |
| 30+ | 126.08 грн |
| 120+ | 117.67 грн |
| BT155W-1200TQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
на замовлення 332 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 275.17 грн |
| 10+ | 174.83 грн |
| 30+ | 148.77 грн |
| 120+ | 124.40 грн |
| 240+ | 121.03 грн |
| BT155Z-1200TQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1292; TOP3I
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50mA; SOT1292,TOP3I; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 50mA
Case: SOT1292; TOP3I
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
на замовлення 287 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 219.96 грн |
| 5+ | 166.42 грн |
| 25+ | 158.86 грн |
| 90+ | 134.48 грн |
| BT155W-1200T-AQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 3mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Application: automotive industry
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 3mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 79A
Load current: 50A
Gate current: 3mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.65kA
Turn-on time: 2µs
Application: automotive industry
на замовлення 96 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 274.27 грн |
| 10+ | 222.74 грн |
| 25+ | 204.25 грн |
| BT158W-1200TQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 70mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.1kA
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 70mA; SOT429,TO247-3; THT
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 70mA
Case: SOT429; TO247-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 1.1kA
Turn-on time: 2µs
на замовлення 203 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 444.44 грн |
| 10+ | 278.21 грн |
| 30+ | 238.71 грн |
| 90+ | 236.19 грн |
| BT150S-600R,118 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 35A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; 2.5A; Igt: 15uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Load current: 2.5A
Gate current: 15µA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 35A
Turn-on time: 2µs
товару немає в наявності
В кошику
од. на суму грн.
| WNS30H100CBJ |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.67V
Max. load current: 30A
Max. forward impulse current: 330A
Kind of package: reel; tape
на замовлення 168 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 105.00 грн |
| 10+ | 62.28 грн |
| 100+ | 41.61 грн |
| PHE13005,127 |
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Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Mounting: THT
Type of transistor: NPN
Case: TO220AB
Power dissipation: 75W
Collector current: 4A
Current gain: 10...40
Collector-emitter voltage: 400V
Kind of package: tube
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Mounting: THT
Type of transistor: NPN
Case: TO220AB
Power dissipation: 75W
Collector current: 4A
Current gain: 10...40
Collector-emitter voltage: 400V
Kind of package: tube
Polarisation: bipolar
на замовлення 2465 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 60.65 грн |
| 9+ | 47.07 грн |
| 11+ | 40.68 грн |
| 50+ | 27.06 грн |
| 100+ | 22.86 грн |
| 500+ | 16.89 грн |
| 1000+ | 15.38 грн |
| 2000+ | 14.71 грн |
| BT148-400R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Case: SIP3; SOT82
Kind of package: tube
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 15µA
Load current: 2.5A
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 0.4kV
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Case: SIP3; SOT82
Kind of package: tube
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 15µA
Load current: 2.5A
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 0.4kV
на замовлення 990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 44.35 грн |
| 13+ | 33.03 грн |
| 50+ | 26.73 грн |
| 100+ | 24.38 грн |
| 500+ | 19.75 грн |
| BT148-500R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Case: SIP3; SOT82
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 15µA
Load current: 2.5A
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 500V
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 4A; 2.5A; Igt: 15uA; SIP3,SOT82; THT; tube
Mounting: THT
Case: SIP3; SOT82
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 15µA
Load current: 2.5A
Max. load current: 4A
Max. forward impulse current: 35A
Max. off-state voltage: 500V
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BT138-800.127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Technology: 4Q
Max. forward impulse current: 95A
Features of semiconductor devices: sensitive gate
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| NXPSC206506Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| NXPSC20650W-AQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2.1V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.
| NXPSC20650W6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.
| WNSC6D20650B6J |
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Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.8V
Max. forward impulse current: 120A
Kind of package: reel; tape
Max. load current: 40A
на замовлення 784 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 211.81 грн |
| 10+ | 137.84 грн |
| 100+ | 116.83 грн |
| 500+ | 94.14 грн |
| NXPLQSC20650W6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.85V
Max. forward impulse current: 48A
Kind of package: tube
Max. load current: 20A
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.
| WNSC2D20650CJQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; SOT1293,TO3PF
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: SOT1293; TO3PF
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
товару немає в наявності
Мінімальне замовлення: 2400 шт
В кошику
од. на суму грн.
| WNSC2D20650CWQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 50A
Kind of package: tube
Max. load current: 20A
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| WNSC6D20650WQ |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 155A
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| ACT102H-600D,118 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.2A; Igt: 5mA; SO8; SMD
Type of thyristor: AC switch
Max. load current: 0.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Gate current: 5mA
Max. off-state voltage: 0.6kV
Features of semiconductor devices: internally triggered
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.2A; Igt: 5mA; SO8; SMD
Type of thyristor: AC switch
Max. load current: 0.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Gate current: 5mA
Max. off-state voltage: 0.6kV
Features of semiconductor devices: internally triggered
на замовлення 1234 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 32+ | 14.48 грн |
| 35+ | 12.36 грн |
| 36+ | 11.77 грн |
| 38+ | 11.26 грн |
| 100+ | 11.18 грн |
| BT137X-600/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BTA425Z-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 25A
Max. forward impulse current: 250A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: SOT1292; TO3P
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 25A
Max. forward impulse current: 250A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
на замовлення 520 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 210.91 грн |
| 10+ | 127.76 грн |
| 30+ | 105.06 грн |
| 150+ | 84.05 грн |
| BTA425Y-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 25A
Max. forward impulse current: 250A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220AB
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 25A
Max. forward impulse current: 250A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
на замовлення 913 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 142.11 грн |
| 10+ | 85.73 грн |
| 25+ | 74.81 грн |
| 50+ | 68.92 грн |
| 100+ | 64.72 грн |
| 250+ | 60.52 грн |
| 500+ | 58.84 грн |
| BTA425X-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Max. load current: 25A
Max. forward impulse current: 250A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 25A; TO220FP; Igt: 50mA; Ifsm: 250A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: sensitive gate
Max. load current: 25A
Max. forward impulse current: 250A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
на замовлення 377 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 77.84 грн |
| 7+ | 64.72 грн |
| 25+ | 57.16 грн |
| 100+ | 56.31 грн |
| BTA420X-800BT,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 20A
Max. forward impulse current: 200A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Type of thyristor: triac
Gate current: 50mA
Features of semiconductor devices: high temperature; sensitive gate
Max. load current: 20A
Max. forward impulse current: 200A
Kind of package: tube
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
на замовлення 313 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 131.25 грн |
| 10+ | 73.80 грн |
| 50+ | 58.08 грн |
| 100+ | 52.70 грн |
| BT300S-600R,118 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 2mA; DPAK; SMD; reel,tape; 2us
Kind of package: reel; tape
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
Case: DPAK
Mounting: SMD
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 2mA
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 8A; 5A; Igt: 2mA; DPAK; SMD; reel,tape; 2us
Kind of package: reel; tape
Load current: 5A
Max. load current: 8A
Max. forward impulse current: 65A
Max. off-state voltage: 0.6kV
Case: DPAK
Mounting: SMD
Type of thyristor: thyristor
Turn-on time: 2µs
Gate current: 2mA
товару немає в наявності
В кошику
од. на суму грн.
| BYC10-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 65A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 65A
Case: SOD59; TO220AC
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
на замовлення 229 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 76.03 грн |
| 10+ | 52.62 грн |
| 25+ | 45.39 грн |
| 50+ | 40.85 грн |
| 100+ | 37.23 грн |
| BTA420-800CT,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
| BTA420X-800CT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
| BTA420-800BT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
| BTA420X-800CT/L02Q |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220FP; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220FP
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
| BTA420Y-800BT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 220A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 50mA; Ifsm: 220A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 50mA
Max. load current: 20A
Max. forward impulse current: 220A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику
од. на суму грн.
| BTA420Y-800CT,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BT137-800.127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| MURS360BJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 3A
Case: SMB
Max. forward voltage: 0.88V
Max. forward impulse current: 100A
Features of semiconductor devices: ultrafast switching
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Load current: 3A
Case: SMB
Max. forward voltage: 0.88V
Max. forward impulse current: 100A
Features of semiconductor devices: ultrafast switching
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 50ns
Kind of package: reel; tape
на замовлення 2149 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 26.25 грн |
| 25+ | 17.40 грн |
| 100+ | 12.94 грн |
| 500+ | 9.92 грн |
| 1000+ | 8.57 грн |
| BT137X-800.127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
товару немає в наявності
В кошику
од. на суму грн.
| WSJM65R099DQ |
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Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| WSJM65R099DTLJ |
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Виробник: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| BTA316X-800E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1880 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 86.90 грн |
| 10+ | 57.24 грн |
| 100+ | 46.56 грн |
| 500+ | 39.42 грн |
| 1000+ | 36.31 грн |





















