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BTA420Y-800CT,127 BTA420Y-800CT,127 WeEn Semiconductors BTA420Y-800CT.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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BT137-800.127 BT137-800.127 WeEn Semiconductors BT137-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
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MURS360BJ MURS360BJ WeEn Semiconductors MURS360B.pdf _ween_psg2020.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.88V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 2659 шт:
термін постачання 14-30 дні (днів)
18+26.27 грн
25+17.41 грн
100+12.95 грн
500+9.93 грн
1000+8.58 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BT137X-800.127 BT137X-800.127 WeEn Semiconductors BT137X-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
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WSJM65R099DQ WeEn Semiconductors WSJM65R099DQ.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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WSJM65R099DTLJ WeEn Semiconductors WSJM65R099DTLJ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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BTA316X-800E,127 BTA316X-800E,127 WeEn Semiconductors bta316x-800e.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
на замовлення 1990 шт:
термін постачання 14-30 дні (днів)
6+86.96 грн
10+57.28 грн
100+46.60 грн
500+39.45 грн
1000+36.34 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BTA316B-800E,118 BTA316B-800E,118 WeEn Semiconductors bta316b-800e.pdf Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
на замовлення 797 шт:
термін постачання 14-30 дні (днів)
8+62.51 грн
9+52.41 грн
10+46.43 грн
30+41.72 грн
100+38.95 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BTA316B-600E,118 BTA316B-600E,118 WeEn Semiconductors BTA316B-600E.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Max. off-state voltage: 0.6kV
Type of thyristor: triac
Kind of package: reel; tape
Case: D2PAK
Features of semiconductor devices: sensitive gate
Mounting: SMD
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
на замовлення 741 шт:
термін постачання 14-30 дні (днів)
7+70.66 грн
10+53.08 грн
100+42.48 грн
500+40.80 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BTA316-600C,127 BTA316-600C,127 WeEn Semiconductors BTA316-600C.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 81 шт:
термін постачання 14-30 дні (днів)
7+67.04 грн
10+55.52 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BTA316-600BT,127 BTA316-600BT,127 WeEn Semiconductors BTA316-600BT.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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BTA316-600E,127 BTA316-600E,127 WeEn Semiconductors BTA316-600E.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Max. off-state voltage: 0.6kV
Type of thyristor: triac
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: sensitive gate
Mounting: THT
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
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BTA316X-800C,127 BTA316X-800C,127 WeEn Semiconductors BTA316X-800C.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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BTA316-800CTQ WeEn Semiconductors BTA316-800CT.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
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BTA316-600ET/DGQ WeEn Semiconductors BTA316-600ET.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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ACTT4S-800E,118 ACTT4S-800E,118 WeEn Semiconductors ACTT4S-800E.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
на замовлення 2087 шт:
термін постачання 14-30 дні (днів)
12+38.05 грн
15+29.95 грн
100+21.11 грн
250+20.10 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
ACTT2S-800E,118 ACTT2S-800E,118 WeEn Semiconductors ACTT2S-800E.pdf _ween_psg2020.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
на замовлення 2180 шт:
термін постачання 14-30 дні (днів)
10+47.11 грн
14+30.70 грн
25+27.34 грн
100+23.13 грн
250+20.95 грн
500+19.60 грн
1000+18.34 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SMCJ58AJ WeEn Semiconductors SMCJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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WNSC16650CWQ WNSC16650CWQ WeEn Semiconductors WNSC16650CW_0.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.7V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
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NXPSC166506Q NXPSC166506Q WeEn Semiconductors NXPSC166506Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: tube
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NXPSC16650B6J NXPSC16650B6J WeEn Semiconductors NXPSC16650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: reel; tape
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WNSC2D16650CWQ WNSC2D16650CWQ WeEn Semiconductors WNSC2D16650CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.8V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
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WNSC6D16650B6J WeEn Semiconductors WNSC6D16650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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WNSC6D16650CW6Q WeEn Semiconductors WNSC6D16650CW6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.65V
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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BTA204-600D,127 BTA204-600D,127 WeEn Semiconductors BTA204-600D.pdf BTA204-600B.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 727 шт:
термін постачання 14-30 дні (днів)
18+25.82 грн
20+21.87 грн
22+19.60 грн
30+17.33 грн
100+17.16 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BTA204X-600F,127 BTA204X-600F,127 WeEn Semiconductors BTA204X-600F.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 781 шт:
термін постачання 14-30 дні (днів)
16+29.44 грн
17+24.90 грн
19+22.29 грн
30+19.77 грн
100+17.75 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BTA204X-600C,127 BTA204X-600C,127 WeEn Semiconductors BTA204X-600C.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600B,127 BTA204-600B,127 WeEn Semiconductors BTA204-600B.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600E,127 BTA204-600E,127 WeEn Semiconductors BTA204-600E.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Max. off-state voltage: 0.6kV
Type of thyristor: triac
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: sensitive gate
Mounting: THT
Gate current: 10mA
Max. load current: 4A
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
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BTA204W-600E,135 BTA204W-600E,135 WeEn Semiconductors PHGLS30330-1.pdf?t.download=true&u=5oefqw BTA204W-600E.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204X-600D,127 BTA204X-600D,127 WeEn Semiconductors BTA204X-600D.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600C,127 BTA204-600C,127 WeEn Semiconductors BTA204-600C.pdf PHGLS30374-1.pdf?t.download=true&u=5oefqw Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600F,127 BTA204-600F,127 WeEn Semiconductors BTA204-600F.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204S-1000C,118 BTA204S-1000C,118 WeEn Semiconductors BTA204S-1000C.pdf Category: Triacs
Description: Triac; 1kV; 4A; DPAK; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 4A
Case: DPAK
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204S-600F,118 BTA204S-600F,118 WeEn Semiconductors BTA204S-600F.pdf Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600C,135 BTA204W-600C,135 WeEn Semiconductors BTA204W-600C.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600D,135 BTA204W-600D,135 WeEn Semiconductors BTA204W-600D.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600F,135 BTA204W-600F,135 WeEn Semiconductors BTA204W-600F.pdf BTA204W-600F.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204X-600B,127 BTA204X-600B,127 WeEn Semiconductors BTA204X-600B.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204X-600E,127 BTA204X-600E,127 WeEn Semiconductors BTA204X-600E.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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NXPSC04650B NXPSC04650B WeEn Semiconductors NXPSC04650B.pdf _ween_psg2020.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. load current: 8A
Max. forward impulse current: 24A
Kind of package: reel; tape
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
9+47.11 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
NXPSC04650Q NXPSC04650Q WeEn Semiconductors NXPSC04650.pdf _ween_psg2020.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.5V
Max. load current: 8A
Max. forward impulse current: 24A
Kind of package: tube
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
6+81.53 грн
7+68.14 грн
25+63.93 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NXPLQSC30650W6Q NXPLQSC30650W6Q WeEn Semiconductors nxplqsc30650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.95V
Max. load current: 30A
Max. forward impulse current: 50A
Kind of package: tube
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NXPSC046506Q NXPSC046506Q WeEn Semiconductors nxpsc04650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: tube
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NXPSC04650B6J NXPSC04650B6J WeEn Semiconductors nxpsc04650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: reel; tape
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NXPSC04650D6J NXPSC04650D6J WeEn Semiconductors nxpsc04650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: reel; tape
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NXPSC04650X6Q NXPSC04650X6Q WeEn Semiconductors nxpsc04650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: tube
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NXPSC066506Q NXPSC066506Q WeEn Semiconductors nxpsc06650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: tube
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NXPSC06650B6J NXPSC06650B6J WeEn Semiconductors nxpsc06650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: reel; tape
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NXPSC06650D6J NXPSC06650D6J WeEn Semiconductors nxpsc06650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: reel; tape
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NXPSC06650X6Q NXPSC06650X6Q WeEn Semiconductors nxpsc06650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: tube
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NXPSC086506Q NXPSC086506Q WeEn Semiconductors nxpsc08650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: tube
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NXPSC08650B6J NXPSC08650B6J WeEn Semiconductors nxpsc08650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: reel; tape
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NXPSC08650D6J NXPSC08650D6J WeEn Semiconductors nxpsc08650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: reel; tape
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NXPSC08650X6Q NXPSC08650X6Q WeEn Semiconductors nxpsc08650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: tube
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NXPSC106506Q NXPSC106506Q WeEn Semiconductors nxpsc10650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
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NXPSC10650B6J NXPSC10650B6J WeEn Semiconductors nxpsc10650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650D6J NXPSC10650D6J WeEn Semiconductors nxpsc10650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650X6Q NXPSC10650X6Q WeEn Semiconductors nxpsc10650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
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5.0SMDJ78CAJ WeEn Semiconductors 5.0SMDJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
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BTA420Y-800CT,127 BTA420Y-800CT.pdf
BTA420Y-800CT,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 200A; 3Q,Hi-Com
Mounting: THT
Case: TO220AB
Kind of package: tube
Features of semiconductor devices: high temperature; sensitive gate
Type of thyristor: triac
Gate current: 35mA
Max. load current: 20A
Max. forward impulse current: 200A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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BT137-800.127 BT137-800.pdf _ween_psg2020.pdf
BT137-800.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 65A
Technology: 4Q
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MURS360BJ MURS360B.pdf _ween_psg2020.pdf
MURS360BJ
Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 0.88V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.88V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 2659 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+26.27 грн
25+17.41 грн
100+12.95 грн
500+9.93 грн
1000+8.58 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BT137X-800.127 BT137X-800.pdf _ween_psg2020.pdf
BT137X-800.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
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WSJM65R099DQ WSJM65R099DQ.pdf
Виробник: WeEn Semiconductors
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 128A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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WSJM65R099DTLJ WSJM65R099DTLJ.pdf
Виробник: WeEn Semiconductors
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 100A; 147W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 147W
Case: TOLL
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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BTA316X-800E,127 bta316x-800e.pdf
BTA316X-800E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
на замовлення 1990 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+86.96 грн
10+57.28 грн
100+46.60 грн
500+39.45 грн
1000+36.34 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BTA316B-800E,118 bta316b-800e.pdf
BTA316B-800E,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
на замовлення 797 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+62.51 грн
9+52.41 грн
10+46.43 грн
30+41.72 грн
100+38.95 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BTA316B-600E,118 BTA316B-600E.pdf _ween_psg2020.pdf
BTA316B-600E,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; D2PAK; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Max. off-state voltage: 0.6kV
Type of thyristor: triac
Kind of package: reel; tape
Case: D2PAK
Features of semiconductor devices: sensitive gate
Mounting: SMD
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
на замовлення 741 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+70.66 грн
10+53.08 грн
100+42.48 грн
500+40.80 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BTA316-600C,127 BTA316-600C.pdf _ween_psg2020.pdf
BTA316-600C,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 81 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+67.04 грн
10+55.52 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BTA316-600BT,127 BTA316-600BT.pdf _ween_psg2020.pdf
BTA316-600BT,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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BTA316-600E,127 BTA316-600E.pdf
BTA316-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Max. off-state voltage: 0.6kV
Type of thyristor: triac
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: sensitive gate
Mounting: THT
Gate current: 10mA
Max. load current: 16A
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
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BTA316X-800C,127 BTA316X-800C.pdf
BTA316X-800C,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 140A; 3Q,Hi-Com
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 35mA
Max. load current: 16A
Max. forward impulse current: 140A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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BTA316-800CTQ BTA316-800CT.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35mA; Ifsm: 150A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 150A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
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BTA316-600ET/DGQ BTA316-600ET.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 10mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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ACTT4S-800E,118 ACTT4S-800E.pdf
ACTT4S-800E,118
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
на замовлення 2087 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+38.05 грн
15+29.95 грн
100+21.11 грн
250+20.10 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
ACTT2S-800E,118 ACTT2S-800E.pdf _ween_psg2020.pdf
ACTT2S-800E,118
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 2A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
на замовлення 2180 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+47.11 грн
14+30.70 грн
25+27.34 грн
100+23.13 грн
250+20.95 грн
500+19.60 грн
1000+18.34 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SMCJ58AJ SMCJ Series.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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WNSC16650CWQ WNSC16650CW_0.pdf
WNSC16650CWQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.7V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
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NXPSC166506Q NXPSC166506Q.pdf
NXPSC166506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: tube
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NXPSC16650B6J NXPSC16650B6J.pdf
NXPSC16650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: reel; tape
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WNSC2D16650CWQ WNSC2D16650CW.pdf
WNSC2D16650CWQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.8V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
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WNSC6D16650B6J WNSC6D16650B6J.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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WNSC6D16650CW6Q WNSC6D16650CW6Q.pdf
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.65V
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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BTA204-600D,127 BTA204-600D.pdf BTA204-600B.pdf
BTA204-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 727 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.82 грн
20+21.87 грн
22+19.60 грн
30+17.33 грн
100+17.16 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BTA204X-600F,127 BTA204X-600F.pdf
BTA204X-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 781 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+29.44 грн
17+24.90 грн
19+22.29 грн
30+19.77 грн
100+17.75 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BTA204X-600C,127 BTA204X-600C.pdf
BTA204X-600C,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600B,127 BTA204-600B.pdf
BTA204-600B,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600E,127 BTA204-600E.pdf
BTA204-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Max. off-state voltage: 0.6kV
Type of thyristor: triac
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: sensitive gate
Mounting: THT
Gate current: 10mA
Max. load current: 4A
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
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BTA204W-600E,135 PHGLS30330-1.pdf?t.download=true&u=5oefqw BTA204W-600E.pdf
BTA204W-600E,135
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204X-600D,127 BTA204X-600D.pdf
BTA204X-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600C,127 BTA204-600C.pdf PHGLS30374-1.pdf?t.download=true&u=5oefqw
BTA204-600C,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600F,127 BTA204-600F.pdf
BTA204-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204S-1000C,118 BTA204S-1000C.pdf
BTA204S-1000C,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 4A; DPAK; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 4A
Case: DPAK
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204S-600F,118 BTA204S-600F.pdf
BTA204S-600F,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600C,135 BTA204W-600C.pdf
BTA204W-600C,135
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600D,135 BTA204W-600D.pdf
BTA204W-600D,135
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600F,135 BTA204W-600F.pdf BTA204W-600F.pdf
BTA204W-600F,135
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204X-600B,127 BTA204X-600B.pdf
BTA204X-600B,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204X-600E,127 BTA204X-600E.pdf
BTA204X-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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NXPSC04650B NXPSC04650B.pdf _ween_psg2020.pdf
NXPSC04650B
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.5V
Max. load current: 8A
Max. forward impulse current: 24A
Kind of package: reel; tape
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+47.11 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
NXPSC04650Q NXPSC04650.pdf _ween_psg2020.pdf
NXPSC04650Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.5V
Max. load current: 8A
Max. forward impulse current: 24A
Kind of package: tube
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+81.53 грн
7+68.14 грн
25+63.93 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NXPLQSC30650W6Q nxplqsc30650w.pdf
NXPLQSC30650W6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.95V
Max. load current: 30A
Max. forward impulse current: 50A
Kind of package: tube
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NXPSC046506Q nxpsc04650.pdf
NXPSC046506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: tube
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NXPSC04650B6J nxpsc04650b.pdf
NXPSC04650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: reel; tape
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В кошику  од. на суму  грн.
NXPSC04650D6J nxpsc04650d.pdf
NXPSC04650D6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: reel; tape
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NXPSC04650X6Q nxpsc04650x.pdf
NXPSC04650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: tube
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NXPSC066506Q nxpsc06650.pdf
NXPSC066506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: tube
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NXPSC06650B6J nxpsc06650b.pdf
NXPSC06650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: reel; tape
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NXPSC06650D6J nxpsc06650d.pdf
NXPSC06650D6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: reel; tape
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NXPSC06650X6Q nxpsc06650x.pdf
NXPSC06650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: tube
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NXPSC086506Q nxpsc08650.pdf
NXPSC086506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: tube
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NXPSC08650B6J nxpsc08650b.pdf
NXPSC08650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: reel; tape
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NXPSC08650D6J nxpsc08650d.pdf
NXPSC08650D6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: reel; tape
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NXPSC08650X6Q nxpsc08650x.pdf
NXPSC08650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: tube
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NXPSC106506Q nxpsc10650.pdf
NXPSC106506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
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NXPSC10650B6J nxpsc10650b.pdf
NXPSC10650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650D6J nxpsc10650d.pdf
NXPSC10650D6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650X6Q nxpsc10650x.pdf
NXPSC10650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
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5.0SMDJ78CAJ 5.0SMDJ.pdf
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
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