Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6043) > Сторінка 93 з 101
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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BTA204W-800E,135 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: SOT223 Gate current: 10mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 3453 шт: термін постачання 14-30 дні (днів) |
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BTA204X-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220FP Gate current: 10mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||||||
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BT137S-600G,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: DPAK Gate current: 50/100mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 2281 шт: термін постачання 14-30 дні (днів) |
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BT136X-600F,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220FP; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 25/70mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||||||
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BT137S-800F,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; DPAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Mounting: SMD Max. forward impulse current: 65A Gate current: 25/70mA Technology: 4Q Features of semiconductor devices: sensitive gate Max. off-state voltage: 0.8kV Max. load current: 8A Kind of package: reel; tape Case: DPAK |
на замовлення 486 шт: термін постачання 14-30 дні (днів) |
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BT137S-800G,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Mounting: SMD Max. forward impulse current: 65A Gate current: 50/100mA Technology: 4Q Features of semiconductor devices: sensitive gate Max. off-state voltage: 0.8kV Max. load current: 8A Kind of package: reel; tape Case: DPAK |
на замовлення 1713 шт: термін постачання 14-30 дні (днів) |
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BTA204W-800C,135 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: SOT223 Gate current: 35mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BTA204X-800C,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220FP Gate current: 35mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT151X-800R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 12A Load current: 7.5A Gate current: 2mA Case: TO220FP Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
на замовлення 996 шт: термін постачання 14-30 дні (днів) |
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BT136X-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220FP Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 296 шт: термін постачання 14-30 дні (днів) |
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BTA208X-600E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220FP Gate current: 10mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 374 шт: термін постачання 14-30 дні (днів) |
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BTA208X-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220FP Gate current: 10mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 356 шт: термін постачання 14-30 дні (днів) |
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BT137-600.127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 8A Case: TO220AB Gate current: 35/70mA Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT136-600 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 35/70mA Mounting: THT Kind of package: tube Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
| WG40N65DFJQ | WeEn Semiconductors |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 26W; SOT1293,TO3PF Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 26W Case: SOT1293; TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 173nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BT152B-1200TJ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; D2PAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 31A Load current: 20A Gate current: 35mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 250A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| WG50N65HFW1Q | WeEn Semiconductors |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 227W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 138nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BT136X-600E/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220FP Gate current: 10/25mA Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MAC97A8/DG,412 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 0.6A Case: TO92 Gate current: 5/7mA Max. forward impulse current: 8A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT139-600-0TQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 50/100mA Max. forward impulse current: 155A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT139-600G0TQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 16A Case: TO220AB Gate current: 50/100mA Max. forward impulse current: 155A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT138-600-0TQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 50/100mA Mounting: THT Kind of package: tube Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT138-600/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: TO220AB Gate current: 35/70mA Mounting: THT Kind of package: tube Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA204X-800C/L03Q | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 4A Case: TO220FP Gate current: 35mA Max. forward impulse current: 25A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA416X-800CTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 35mA Max. forward impulse current: 160A Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA410-800BT,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 10A Case: TO220AB Gate current: 50mA Max. forward impulse current: 100A Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA416X-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 160A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220FP Gate current: 50mA Max. forward impulse current: 160A Mounting: THT Kind of package: tube Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTA408X-1000C0T,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 1kV Max. load current: 8A Case: TO220FP Gate current: 35mA Max. forward impulse current: 100A Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature; sensitive gate Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT134W-800EF | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 2A; SOT223; Igt: 10mA; Ifsm: 25A; 4Q; sensitive gate Max. off-state voltage: 0.8kV Max. load current: 2A Kind of package: reel; tape Case: SOT223 Type of thyristor: triac Mounting: SMD Max. forward impulse current: 25A Gate current: 10mA Technology: 4Q Features of semiconductor devices: sensitive gate |
на замовлення 3593 шт: термін постачання 14-30 дні (днів) |
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SMAJ5.0CAJ | WeEn Semiconductors |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 6.45÷6.98V; 43.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.45...6.98V Max. forward impulse current: 43.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Leakage current: 0.4mA |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BT138Y-800E,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: TO220AB Gate current: 10/25mA Max. forward impulse current: 95A Technology: 4Q Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 824 шт: термін постачання 14-30 дні (днів) |
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BT136-600D/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 5/10mA Mounting: THT Kind of package: tube Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT136-600/DG,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 35/70mA Mounting: THT Kind of package: tube Max. forward impulse current: 25A Technology: 4Q Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT151-650LTFQ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Load current: 7.5A Gate current: 5mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 120A Turn-on time: 2µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT151S-650SJ | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 200uA; DPAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 650V Max. load current: 12A Gate current: 0.2mA Case: DPAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 90A Load current: 7.5A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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BT169D/DG,126 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack Mounting: THT Case: TO92 Kind of package: Ammo Pack Max. load current: 0.8A Type of thyristor: thyristor Max. forward impulse current: 9A Manufacturer standard package: 2000pcs. Gate current: 0.2mA Max. off-state voltage: 0.4kV Turn-on time: 2µs Load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT169G-L,412 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us Mounting: THT Case: TO92 Max. load current: 0.8A Type of thyristor: thyristor Max. forward impulse current: 8A Gate current: 50mA Max. off-state voltage: 0.6kV Turn-on time: 2µs Load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT169G-MQP | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us Mounting: THT Case: TO92 Max. load current: 0.8A Type of thyristor: thyristor Max. forward impulse current: 8A Gate current: 50mA Max. off-state voltage: 0.6kV Turn-on time: 2µs Load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT169G/DG,126 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us Mounting: THT Case: TO92 Max. load current: 0.8A Type of thyristor: thyristor Max. forward impulse current: 8A Gate current: 50mA Max. off-state voltage: 0.6kV Turn-on time: 2µs Load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT169H-LML | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Max. load current: 0.8A Type of thyristor: thyristor Max. forward impulse current: 9A Gate current: 100µA Max. off-state voltage: 0.8kV Turn-on time: 2µs Load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT169H/01U | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A Mounting: THT Case: TO92 Max. load current: 0.8A Type of thyristor: thyristor Max. forward impulse current: 9A Gate current: 100µA Max. off-state voltage: 0.8kV Turn-on time: 2µs Load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BT137-800G0TQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: TO220AB Gate current: 50/100mA Mounting: THT Kind of package: tube Max. forward impulse current: 65A Technology: 4Q Features of semiconductor devices: sensitive gate |
на замовлення 950 шт: термін постачання 14-30 дні (днів) |
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| WNSC5D20650W6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 100A Kind of package: tube Max. load current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTA445Z-800BTQ | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com Mounting: THT Technology: 3Q; Hi-Com Features of semiconductor devices: high temperature Max. off-state voltage: 0.8kV Max. load current: 45A Kind of package: tube Case: SOT1292; TO3P Type of thyristor: triac Max. forward impulse current: 495A Gate current: 50mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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WNSC5D20650X6Q | WeEn Semiconductors |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 2.2V Max. forward impulse current: 80A Kind of package: tube Max. load current: 40A |
на замовлення 784 шт: термін постачання 14-30 дні (днів) |
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BTA208S-800E,118 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 8A Case: DPAK Gate current: 10mA Max. forward impulse current: 65A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: SMD Kind of package: reel; tape |
на замовлення 8725 шт: термін постачання 14-30 дні (днів) |
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| BTA416B-800BTJ | WeEn Semiconductors |
Category: Unclassified Description: BTA416B-800BTJ |
на замовлення 4800 шт: термін постачання 14-30 дні (днів) |
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BYV29-500.127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 9A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 110A Case: SOD59; TO220AC Max. forward voltage: 0.9V Heatsink thickness: max. 1.3mm Reverse recovery time: 60ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BYV29-500,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 500V; 9A; Ifsm: 110A; SOD59,TO220AC; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 500V Load current: 9A Semiconductor structure: single diode Max. forward impulse current: 110A Case: SOD59; TO220AC Kind of package: tube Max. forward voltage: 0.9V Reverse recovery time: 60ns Features of semiconductor devices: ultrafast switching Heatsink thickness: max. 1.3mm |
на замовлення 3330 шт: термін постачання 14-30 дні (днів) |
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BYC15-600,127 | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; Ifsm: 200A; SOD59,TO220AC; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Max. forward impulse current: 200A Case: SOD59; TO220AC Kind of package: tube Max. forward voltage: 1.4V Reverse recovery time: 19ns |
на замовлення 213 шт: термін постачання 14-30 дні (днів) |
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BYC15-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; Ifsm: 180A; SOD59,TO220AC; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 180A Case: SOD59; TO220AC Kind of package: tube Max. forward voltage: 2V Max. load current: 30A Reverse recovery time: 18ns |
на замовлення 766 шт: термін постачання 14-30 дні (днів) |
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BTA216-800B,127 | WeEn Semiconductors |
Category: TriacsDescription: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 16A Case: TO220AB Gate current: 50mA Max. forward impulse current: 140A Technology: 3Q; Hi-Com Features of semiconductor devices: sensitive gate Mounting: THT Kind of package: tube |
на замовлення 1739 шт: термін постачання 14-30 дні (днів) |
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SMAJ18AJ | WeEn Semiconductors |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20.19...21.9V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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ACT108W-600E,135 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; SOT223; SMD Type of thyristor: AC switch Max. off-state voltage: 0.6kV Max. load current: 0.8A Gate current: 10mA Case: SOT223 Mounting: SMD Features of semiconductor devices: internally triggered Kind of package: reel; tape |
на замовлення 1931 шт: термін постачання 14-30 дні (днів) |
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ACT108W-600D,135 | WeEn Semiconductors |
Category: Thyristors - othersDescription: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; SOT223; SMD Type of thyristor: AC switch Max. off-state voltage: 0.6kV Max. load current: 0.8A Gate current: 5mA Case: SOT223 Mounting: SMD Features of semiconductor devices: internally triggered Kind of package: reel; tape |
на замовлення 3775 шт: термін постачання 14-30 дні (днів) |
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MURS160BJ | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 1.25V Max. forward impulse current: 35A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BYV32EB-200,118 | WeEn Semiconductors |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Reverse recovery time: 25ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: D2PAK; SOT404 Max. forward voltage: 0.72V Max. load current: 20A Max. forward impulse current: 137A Kind of package: reel; tape |
на замовлення 311 шт: термін постачання 14-30 дні (днів) |
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BYV10MX-600PQ | WeEn Semiconductors |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; 35ns Type of diode: rectifying Case: SOD113; TO220FP-2 Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 100A Kind of package: tube Reverse recovery time: 35ns Features of semiconductor devices: ultrafast switching |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BT145-800R,127 | WeEn Semiconductors |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us Mounting: THT Max. forward impulse current: 0.3kA Gate current: 5mA Max. off-state voltage: 0.8kV Turn-on time: 2µs Load current: 16A Max. load current: 25A Kind of package: tube Case: TO220AB Type of thyristor: thyristor |
на замовлення 56 шт: термін постачання 14-30 дні (днів) |
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BUJ100LR,412 | WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 1A Power dissipation: 2.1W Case: TO92 Current gain: 5...20 Mounting: THT Kind of package: bulk |
на замовлення 3395 шт: термін постачання 14-30 дні (днів) |
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| BTA204W-800E,135 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 1A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 3453 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.29 грн |
| 100+ | 22.57 грн |
| 500+ | 18.66 грн |
| 1000+ | 17.22 грн |
| 2000+ | 16.20 грн |
| BTA204X-800E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| BT137S-600G,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: DPAK
Gate current: 50/100mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 2281 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.60 грн |
| 25+ | 24.09 грн |
| 100+ | 21.21 грн |
| 500+ | 19.09 грн |
| BT136X-600F,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25/70mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| BT137S-800F,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Mounting: SMD
Max. forward impulse current: 65A
Gate current: 25/70mA
Technology: 4Q
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 8A
Kind of package: reel; tape
Case: DPAK
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 25/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Mounting: SMD
Max. forward impulse current: 65A
Gate current: 25/70mA
Technology: 4Q
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 8A
Kind of package: reel; tape
Case: DPAK
на замовлення 486 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.52 грн |
| 25+ | 26.30 грн |
| 100+ | 23.25 грн |
| BT137S-800G,118 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Mounting: SMD
Max. forward impulse current: 65A
Gate current: 50/100mA
Technology: 4Q
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 8A
Kind of package: reel; tape
Case: DPAK
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 50/100mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Mounting: SMD
Max. forward impulse current: 65A
Gate current: 50/100mA
Technology: 4Q
Features of semiconductor devices: sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 8A
Kind of package: reel; tape
Case: DPAK
на замовлення 1713 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 85.88 грн |
| 10+ | 50.23 грн |
| 100+ | 33.51 грн |
| 250+ | 28.93 грн |
| 500+ | 26.05 грн |
| 1000+ | 23.59 грн |
| BTA204W-800C,135 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: SOT223
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: SOT223
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| BTA204X-800C,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BT151X-800R,127 |
![]() |
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 12A; 7.5A; Igt: 2mA; TO220FP; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: TO220FP
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
на замовлення 996 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.82 грн |
| 12+ | 35.80 грн |
| 50+ | 30.46 грн |
| 100+ | 28.93 грн |
| 500+ | 25.88 грн |
| BT136X-800E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 296 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 38.37 грн |
| 14+ | 32.41 грн |
| 50+ | 27.06 грн |
| 100+ | 24.52 грн |
| 250+ | 21.46 грн |
| BTA208X-600E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 374 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 94.11 грн |
| 10+ | 55.40 грн |
| 50+ | 42.17 грн |
| 100+ | 37.75 грн |
| BTA208X-800E,127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 8A; TO220FP; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 356 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.86 грн |
| 13+ | 35.29 грн |
| 25+ | 31.98 грн |
| 100+ | 28.08 грн |
| 250+ | 25.96 грн |
| BT137-600.127 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 8A; TO220AB; Igt: 35/70mA; Ifsm: 65A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 8A
Case: TO220AB
Gate current: 35/70mA
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| BT136-600 |
![]() |
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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Мінімальне замовлення: 3 шт
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| WG40N65DFJQ |
Виробник: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 26W; SOT1293,TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 26W
Case: SOT1293; TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 173nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 26W; SOT1293,TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 26W
Case: SOT1293; TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 173nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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| BT152B-1200TJ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 35mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 250A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 35mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 31A
Load current: 20A
Gate current: 35mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 250A
Turn-on time: 2µs
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| WG50N65HFW1Q |
Виробник: WeEn Semiconductors
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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| BT136X-600E/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10/25mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 10/25mA
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| MAC97A8/DG,412 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
Category: Triacs
Description: Triac; 600V; 0.6A; TO92; Igt: 5/7mA; Ifsm: 8A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 0.6A
Case: TO92
Gate current: 5/7mA
Max. forward impulse current: 8A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: bulk
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| BT139-600-0TQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BT139-600G0TQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 50/100mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 50/100mA
Max. forward impulse current: 155A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BT138-600-0TQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 50/100mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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| BT138-600/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 12A; TO220AB; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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| BTA204X-800C/L03Q |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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| BTA416X-800CTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 35mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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| BTA410-800BT,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
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| BTA416X-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 16A; TO220FP; Igt: 50mA; Ifsm: 160A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 160A
Mounting: THT
Kind of package: tube
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
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| BTA408X-1000C0T,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 1kV; 8A; TO220FP; Igt: 35mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 8A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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| BT134W-800EF |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 2A; SOT223; Igt: 10mA; Ifsm: 25A; 4Q; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 2A
Kind of package: reel; tape
Case: SOT223
Type of thyristor: triac
Mounting: SMD
Max. forward impulse current: 25A
Gate current: 10mA
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 2A; SOT223; Igt: 10mA; Ifsm: 25A; 4Q; sensitive gate
Max. off-state voltage: 0.8kV
Max. load current: 2A
Kind of package: reel; tape
Case: SOT223
Type of thyristor: triac
Mounting: SMD
Max. forward impulse current: 25A
Gate current: 10mA
Technology: 4Q
Features of semiconductor devices: sensitive gate
на замовлення 3593 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.82 грн |
| 16+ | 27.66 грн |
| 100+ | 16.54 грн |
| 250+ | 14.85 грн |
| 500+ | 13.24 грн |
| 1000+ | 11.88 грн |
| SMAJ5.0CAJ |
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Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.45÷6.98V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.45...6.98V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Leakage current: 0.4mA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.45÷6.98V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.45...6.98V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Leakage current: 0.4mA
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Мінімальне замовлення: 10000 шт
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| BT138Y-800E,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 12A; TO220AB; Igt: 10/25mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220AB
Gate current: 10/25mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 824 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 58.47 грн |
| 11+ | 40.21 грн |
| 50+ | 35.80 грн |
| 250+ | 32.15 грн |
| 500+ | 30.03 грн |
| BT136-600D/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5/10mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5/10mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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| BT136-600/DG,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35/70mA; Ifsm: 25A; 4Q; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 25A
Technology: 4Q
Features of semiconductor devices: sensitive gate
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| BT151-650LTFQ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 5mA; TO220AB; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Load current: 7.5A
Gate current: 5mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 120A
Turn-on time: 2µs
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| BT151S-650SJ |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 200uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Gate current: 0.2mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 90A
Load current: 7.5A
Category: SMD/THT thyristors
Description: Thyristor; 650V; Ifmax: 12A; 7.5A; Igt: 200uA; DPAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 650V
Max. load current: 12A
Gate current: 0.2mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 90A
Load current: 7.5A
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| BT169D/DG,126 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Mounting: THT
Case: TO92
Kind of package: Ammo Pack
Max. load current: 0.8A
Type of thyristor: thyristor
Max. forward impulse current: 9A
Manufacturer standard package: 2000pcs.
Gate current: 0.2mA
Max. off-state voltage: 0.4kV
Turn-on time: 2µs
Load current: 0.5A
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; 0.5A; Igt: 200uA; TO92; THT; Ammo Pack
Mounting: THT
Case: TO92
Kind of package: Ammo Pack
Max. load current: 0.8A
Type of thyristor: thyristor
Max. forward impulse current: 9A
Manufacturer standard package: 2000pcs.
Gate current: 0.2mA
Max. off-state voltage: 0.4kV
Turn-on time: 2µs
Load current: 0.5A
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| BT169G-L,412 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Mounting: THT
Case: TO92
Max. load current: 0.8A
Type of thyristor: thyristor
Max. forward impulse current: 8A
Gate current: 50mA
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Load current: 0.5A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Mounting: THT
Case: TO92
Max. load current: 0.8A
Type of thyristor: thyristor
Max. forward impulse current: 8A
Gate current: 50mA
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Load current: 0.5A
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| BT169G-MQP |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Mounting: THT
Case: TO92
Max. load current: 0.8A
Type of thyristor: thyristor
Max. forward impulse current: 8A
Gate current: 50mA
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Load current: 0.5A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Mounting: THT
Case: TO92
Max. load current: 0.8A
Type of thyristor: thyristor
Max. forward impulse current: 8A
Gate current: 50mA
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Load current: 0.5A
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| BT169G/DG,126 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Mounting: THT
Case: TO92
Max. load current: 0.8A
Type of thyristor: thyristor
Max. forward impulse current: 8A
Gate current: 50mA
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Load current: 0.5A
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 50mA; TO92; THT; Ifsm: 8A; 2us
Mounting: THT
Case: TO92
Max. load current: 0.8A
Type of thyristor: thyristor
Max. forward impulse current: 8A
Gate current: 50mA
Max. off-state voltage: 0.6kV
Turn-on time: 2µs
Load current: 0.5A
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| BT169H-LML |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Max. load current: 0.8A
Type of thyristor: thyristor
Max. forward impulse current: 9A
Gate current: 100µA
Max. off-state voltage: 0.8kV
Turn-on time: 2µs
Load current: 0.5A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Max. load current: 0.8A
Type of thyristor: thyristor
Max. forward impulse current: 9A
Gate current: 100µA
Max. off-state voltage: 0.8kV
Turn-on time: 2µs
Load current: 0.5A
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| BT169H/01U |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Max. load current: 0.8A
Type of thyristor: thyristor
Max. forward impulse current: 9A
Gate current: 100µA
Max. off-state voltage: 0.8kV
Turn-on time: 2µs
Load current: 0.5A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; 0.5A; Igt: 100uA; TO92; THT; Ifsm: 9A
Mounting: THT
Case: TO92
Max. load current: 0.8A
Type of thyristor: thyristor
Max. forward impulse current: 9A
Gate current: 100µA
Max. off-state voltage: 0.8kV
Turn-on time: 2µs
Load current: 0.5A
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| BT137-800G0TQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Category: Triacs
Description: Triac; 800V; 8A; TO220AB; Igt: 50/100mA; Ifsm: 65A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: TO220AB
Gate current: 50/100mA
Mounting: THT
Kind of package: tube
Max. forward impulse current: 65A
Technology: 4Q
Features of semiconductor devices: sensitive gate
на замовлення 950 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.56 грн |
| 13+ | 34.61 грн |
| 50+ | 30.29 грн |
| 250+ | 26.13 грн |
| 500+ | 24.43 грн |
| WNSC5D20650W6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 100A
Kind of package: tube
Max. load current: 40A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 100A
Kind of package: tube
Max. load current: 40A
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| BTA445Z-800BTQ |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Mounting: THT
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.8kV
Max. load current: 45A
Kind of package: tube
Case: SOT1292; TO3P
Type of thyristor: triac
Max. forward impulse current: 495A
Gate current: 50mA
Category: Triacs
Description: Triac; 800V; 45A; SOT1292,TO3P; Igt: 50mA; Ifsm: 495A; 3Q,Hi-Com
Mounting: THT
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.8kV
Max. load current: 45A
Kind of package: tube
Case: SOT1292; TO3P
Type of thyristor: triac
Max. forward impulse current: 495A
Gate current: 50mA
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| WNSC5D20650X6Q |
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Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 40A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 2.2V
Max. forward impulse current: 80A
Kind of package: tube
Max. load current: 40A
на замовлення 784 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 171.77 грн |
| 5+ | 142.53 грн |
| 25+ | 126.41 грн |
| 100+ | 113.69 грн |
| BTA208S-800E,118 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 800V; 8A; DPAK; Igt: 10mA; Ifsm: 65A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 8A
Case: DPAK
Gate current: 10mA
Max. forward impulse current: 65A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
на замовлення 8725 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 77.66 грн |
| 10+ | 54.30 грн |
| 25+ | 45.73 грн |
| 50+ | 40.13 грн |
| 100+ | 35.55 грн |
| 250+ | 30.97 грн |
| 500+ | 28.08 грн |
| 1000+ | 25.79 грн |
| 2500+ | 23.42 грн |
| BTA416B-800BTJ |
на замовлення 4800 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1600+ | 35.82 грн |
| BYV29-500.127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; tube; Ifsm: 110A; SOD59,TO220AC
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Max. forward voltage: 0.9V
Heatsink thickness: max. 1.3mm
Reverse recovery time: 60ns
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| BYV29-500,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; Ifsm: 110A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 0.9V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.3mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 9A; Ifsm: 110A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 500V
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 110A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 0.9V
Reverse recovery time: 60ns
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.3mm
на замовлення 3330 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 64.87 грн |
| 10+ | 42.42 грн |
| 11+ | 39.45 грн |
| 25+ | 35.97 грн |
| 50+ | 33.51 грн |
| 100+ | 31.22 грн |
| 500+ | 29.78 грн |
| BYC15-600,127 |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 200A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 200A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Max. forward impulse current: 200A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 1.4V
Reverse recovery time: 19ns
на замовлення 213 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.17 грн |
| 11+ | 40.04 грн |
| 25+ | 35.29 грн |
| 100+ | 34.95 грн |
| BYC15-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 180A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 2V
Max. load current: 30A
Reverse recovery time: 18ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 180A; SOD59,TO220AC; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 180A
Case: SOD59; TO220AC
Kind of package: tube
Max. forward voltage: 2V
Max. load current: 30A
Reverse recovery time: 18ns
на замовлення 766 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 79.49 грн |
| 10+ | 50.73 грн |
| 50+ | 44.71 грн |
| 100+ | 42.34 грн |
| 500+ | 35.80 грн |
| BTA216-800B,127 |
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Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 50mA; Ifsm: 140A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 140A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 1739 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 64.87 грн |
| 9+ | 51.07 грн |
| 25+ | 45.05 грн |
| 100+ | 40.47 грн |
| 500+ | 37.41 грн |
| SMAJ18AJ |
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Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20.19...21.9V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20.19÷21.9V; 13.7A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20.19...21.9V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| ACT108W-600E,135 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; SOT223; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 10mA
Case: SOT223
Mounting: SMD
Features of semiconductor devices: internally triggered
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 10mA; SOT223; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 10mA
Case: SOT223
Mounting: SMD
Features of semiconductor devices: internally triggered
Kind of package: reel; tape
на замовлення 1931 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.41 грн |
| 27+ | 15.95 грн |
| 50+ | 13.32 грн |
| 100+ | 13.15 грн |
| ACT108W-600D,135 |
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Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; SOT223; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: SOT223
Mounting: SMD
Features of semiconductor devices: internally triggered
Kind of package: reel; tape
Category: Thyristors - others
Description: Thyristor: AC switch; 600V; Ifmax: 0.8A; Igt: 5mA; SOT223; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 5mA
Case: SOT223
Mounting: SMD
Features of semiconductor devices: internally triggered
Kind of package: reel; tape
на замовлення 3775 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 41.11 грн |
| 18+ | 23.76 грн |
| 28+ | 15.36 грн |
| 100+ | 14.51 грн |
| 500+ | 12.81 грн |
| MURS160BJ |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BYV32EB-200,118 |
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Виробник: WeEn Semiconductors
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.72V
Max. load current: 20A
Max. forward impulse current: 137A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10Ax2; 25ns; D2PAK,SOT404; Ifsm: 137A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK; SOT404
Max. forward voltage: 0.72V
Max. load current: 20A
Max. forward impulse current: 137A
Kind of package: reel; tape
на замовлення 311 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 136.14 грн |
| 10+ | 71.35 грн |
| 50+ | 59.05 грн |
| 60+ | 57.69 грн |
| 100+ | 53.96 грн |
| 250+ | 47.26 грн |
| BYV10MX-600PQ |
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Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; 35ns
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 100A; 35ns
Type of diode: rectifying
Case: SOD113; TO220FP-2
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: tube
Reverse recovery time: 35ns
Features of semiconductor devices: ultrafast switching
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BT145-800R,127 |
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Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us
Mounting: THT
Max. forward impulse current: 0.3kA
Gate current: 5mA
Max. off-state voltage: 0.8kV
Turn-on time: 2µs
Load current: 16A
Max. load current: 25A
Kind of package: tube
Case: TO220AB
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 25A; 16A; Igt: 5mA; TO220AB; THT; tube; 2us
Mounting: THT
Max. forward impulse current: 0.3kA
Gate current: 5mA
Max. off-state voltage: 0.8kV
Turn-on time: 2µs
Load current: 16A
Max. load current: 25A
Kind of package: tube
Case: TO220AB
Type of thyristor: thyristor
на замовлення 56 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 185.47 грн |
| 5+ | 139.14 грн |
| 10+ | 121.32 грн |
| 25+ | 100.11 грн |
| 50+ | 87.39 грн |
| BUJ100LR,412 |
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...20
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 2.1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 2.1W
Case: TO92
Current gain: 5...20
Mounting: THT
Kind of package: bulk
на замовлення 3395 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.45 грн |
| 36+ | 11.79 грн |
| 45+ | 9.56 грн |
| 100+ | 7.44 грн |
| 500+ | 5.47 грн |
| 1000+ | 4.90 грн |






















