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ACTT4S-800E,118 ACTT4S-800E,118 WeEn Semiconductors ACTT4S-800E.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
на замовлення 2087 шт:
термін постачання 14-30 дні (днів)
12+37.78 грн
15+29.73 грн
100+20.96 грн
250+19.96 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
ACTT2S-800E,118 ACTT2S-800E,118 WeEn Semiconductors ACTT2S-800E.pdf _ween_psg2020.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Gate current: 10mA
Max. load current: 2A
Type of thyristor: AC switch
на замовлення 2178 шт:
термін постачання 14-30 дні (днів)
10+46.77 грн
14+30.48 грн
25+27.14 грн
100+22.97 грн
250+20.80 грн
500+19.46 грн
1000+18.21 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SMCJ58AJ WeEn Semiconductors SMCJ Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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WNSC16650CWQ WNSC16650CWQ WeEn Semiconductors WNSC16650CWQ.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
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NXPSC166506Q NXPSC166506Q WeEn Semiconductors NXPSC166506Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: tube
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NXPSC16650B6J NXPSC16650B6J WeEn Semiconductors NXPSC16650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: reel; tape
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WNSC2D16650CWQ WNSC2D16650CWQ WeEn Semiconductors WNSC2D16650CW.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.8V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
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WNSC6D16650B6J WeEn Semiconductors WNSC6D16650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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WNSC6D16650CW6Q WeEn Semiconductors WNSC6D16650CW6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.65V
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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BTA204-600D,127 BTA204-600D,127 WeEn Semiconductors BTA204-600D.pdf BTA204-600B.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 727 шт:
термін постачання 14-30 дні (днів)
18+25.63 грн
20+21.71 грн
22+19.46 грн
30+17.20 грн
100+17.04 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BTA204X-600F,127 BTA204X-600F,127 WeEn Semiconductors BTA204X-600F.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 781 шт:
термін постачання 14-30 дні (днів)
16+29.23 грн
17+24.72 грн
19+22.13 грн
30+19.63 грн
100+17.62 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BTA204X-600C,127 BTA204X-600C,127 WeEn Semiconductors BTA204X-600C.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600B,127 BTA204-600B,127 WeEn Semiconductors BTA204-600B.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600E,127 BTA204-600E,127 WeEn Semiconductors BTA204-600E.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Max. off-state voltage: 0.6kV
Type of thyristor: triac
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: sensitive gate
Mounting: THT
Gate current: 10mA
Max. load current: 4A
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
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BTA204W-600E,135 BTA204W-600E,135 WeEn Semiconductors PHGLS30330-1.pdf?t.download=true&u=5oefqw BTA204W-600E.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204X-600D,127 BTA204X-600D,127 WeEn Semiconductors BTA204X-600D.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600C,127 BTA204-600C,127 WeEn Semiconductors BTA204-600C.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600F,127 BTA204-600F,127 WeEn Semiconductors BTA204-600F.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204S-1000C,118 BTA204S-1000C,118 WeEn Semiconductors BTA204S-1000C.pdf Category: Triacs
Description: Triac; 1kV; 4A; DPAK; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 4A
Case: DPAK
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204S-600F,118 BTA204S-600F,118 WeEn Semiconductors BTA204S-600F.pdf Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600C,135 BTA204W-600C,135 WeEn Semiconductors BTA204W-600C.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600D,135 BTA204W-600D,135 WeEn Semiconductors BTA204W-600D.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600F,135 BTA204W-600F,135 WeEn Semiconductors BTA204W-600F.pdf BTA204W-600F.pdf Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204X-600B,127 BTA204X-600B,127 WeEn Semiconductors BTA204X-600B.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204X-600E,127 BTA204X-600E,127 WeEn Semiconductors BTA204X-600E.pdf Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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NXPSC04650B NXPSC04650B WeEn Semiconductors NXPSC04650B.pdf _ween_psg2020.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
9+46.77 грн
Мінімальне замовлення: 9
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NXPSC04650Q NXPSC04650Q WeEn Semiconductors NXPSC04650.pdf _ween_psg2020.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
6+80.95 грн
7+67.65 грн
25+63.47 грн
Мінімальне замовлення: 6
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NXPLQSC30650W6Q NXPLQSC30650W6Q WeEn Semiconductors nxplqsc30650w.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 30A
Max. forward impulse current: 50A
Kind of package: tube
Max. forward voltage: 1.95V
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NXPSC046506Q NXPSC046506Q WeEn Semiconductors nxpsc04650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: tube
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NXPSC04650B6J NXPSC04650B6J WeEn Semiconductors nxpsc04650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: reel; tape
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NXPSC04650D6J NXPSC04650D6J WeEn Semiconductors nxpsc04650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: reel; tape
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NXPSC04650X6Q NXPSC04650X6Q WeEn Semiconductors nxpsc04650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: tube
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NXPSC066506Q NXPSC066506Q WeEn Semiconductors nxpsc06650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: tube
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NXPSC06650B6J NXPSC06650B6J WeEn Semiconductors nxpsc06650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: reel; tape
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NXPSC06650D6J NXPSC06650D6J WeEn Semiconductors nxpsc06650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: reel; tape
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NXPSC06650X6Q NXPSC06650X6Q WeEn Semiconductors nxpsc06650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: tube
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NXPSC086506Q NXPSC086506Q WeEn Semiconductors nxpsc08650.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: tube
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NXPSC08650B6J NXPSC08650B6J WeEn Semiconductors nxpsc08650b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: reel; tape
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NXPSC08650D6J NXPSC08650D6J WeEn Semiconductors nxpsc08650d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: reel; tape
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NXPSC08650X6Q NXPSC08650X6Q WeEn Semiconductors nxpsc08650x.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: tube
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NXPSC106506Q NXPSC106506Q WeEn Semiconductors NXPSC106506Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
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NXPSC10650B6J NXPSC10650B6J WeEn Semiconductors NXPSC10650B6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650D6J NXPSC10650D6J WeEn Semiconductors NXPSC10650D6J.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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NXPSC10650X6Q NXPSC10650X6Q WeEn Semiconductors NXPSC10650X6Q.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
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5.0SMDJ78CAJ WeEn Semiconductors 5.0SMDJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
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BT151U-500C,127 BT151U-500C,127 WeEn Semiconductors Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
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BTA410Y-600BT,127 BTA410Y-600BT,127 WeEn Semiconductors BTA410Y-600BT.pdf Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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BTA206-800CT,127 BTA206-800CT,127 WeEn Semiconductors bta206-800ct.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
на замовлення 954 шт:
термін постачання 14-30 дні (днів)
12+39.57 грн
15+29.57 грн
50+24.39 грн
100+22.63 грн
500+21.55 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BTA206X-800ET,127 BTA206X-800ET,127 WeEn Semiconductors Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 984 шт:
термін постачання 14-30 дні (днів)
7+66.56 грн
10+46.44 грн
25+39.34 грн
50+34.58 грн
100+30.65 грн
500+24.30 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BTA206-800ET,127 BTA206-800ET,127 WeEn Semiconductors PHGLS23949-1.pdf?t.download=true&u=5oefqw bta206-800et.pdf Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 10mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
на замовлення 990 шт:
термін постачання 14-30 дні (днів)
8+58.46 грн
13+32.57 грн
25+25.89 грн
100+23.22 грн
500+21.63 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BTA202X-600D,127 BTA202X-600D,127 WeEn Semiconductors BTA202X-600D_127.pdf Category: Triacs
Description: Triac; 600V; 2A; TO220FP; Igt: 5mA; Ifsm: 14A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 2A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 14A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 642 шт:
термін постачання 14-30 дні (днів)
20+23.38 грн
30+17.46 грн
100+15.70 грн
500+13.86 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BT138X-800 BT138X-800 WeEn Semiconductors BT138X-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BUJD203A,127 BUJD203A,127 WeEn Semiconductors BUJD203A.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 425V; 4A; 80W; TO220AB
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 11...22
Collector-emitter voltage: 425V
Power dissipation: 80W
Polarisation: bipolar
Case: TO220AB
Mounting: THT
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P6SMBJ28CAJ WeEn Semiconductors P6SMBJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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BTA425Z-800CTQ WeEn Semiconductors BTA425Z-800CT.pdf Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Case: SOT1292; TO3P
Mounting: THT
Type of thyristor: triac
Kind of package: tube
Gate current: 35mA
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
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BTA201-800ER,412 BTA201-800ER,412 WeEn Semiconductors bta201-800er.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Case: TO92
Mounting: THT
Kind of package: bulk
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Gate current: 10mA
Max. load current: 1A
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
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MAC223A6,127 MAC223A6,127 WeEn Semiconductors MAC223A6.pdf Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 25A
Case: TO220AB
Gate current: 50/75mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Technology: 4Q
на замовлення 764 шт:
термін постачання 14-30 дні (днів)
3+157.40 грн
10+80.18 грн
25+74.33 грн
50+70.99 грн
100+65.98 грн
250+60.97 грн
500+56.79 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BT139-800.127 BT139-800.127 WeEn Semiconductors BT139-800.pdf _ween_psg2020.pdf Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 155A
Technology: 4Q
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BYC30W-600PQ BYC30W-600PQ WeEn Semiconductors BYC30W-600P.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
на замовлення 230 шт:
термін постачання 14-30 дні (днів)
4+118.72 грн
30+61.80 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYC30X-600P,127 BYC30X-600P,127 WeEn Semiconductors byc30x-600p.pdf _ween_psg2020.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
на замовлення 718 шт:
термін постачання 14-30 дні (днів)
4+140.31 грн
5+111.08 грн
10+101.89 грн
25+90.20 грн
50+82.68 грн
100+75.17 грн
250+70.99 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ACTT4S-800E,118 ACTT4S-800E.pdf
ACTT4S-800E,118
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 4A; Igt: 10mA; DPAK; SMD
Type of thyristor: AC switch
Max. off-state voltage: 0.8kV
Max. load current: 4A
Gate current: 10mA
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
на замовлення 2087 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+37.78 грн
15+29.73 грн
100+20.96 грн
250+19.96 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
ACTT2S-800E,118 ACTT2S-800E.pdf _ween_psg2020.pdf
ACTT2S-800E,118
Виробник: WeEn Semiconductors
Category: Thyristors - others
Description: Thyristor: AC switch; 800V; Ifmax: 2A; Igt: 10mA; DPAK; SMD
Mounting: SMD
Case: DPAK
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Gate current: 10mA
Max. load current: 2A
Type of thyristor: AC switch
на замовлення 2178 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+46.77 грн
14+30.48 грн
25+27.14 грн
100+22.97 грн
250+20.80 грн
500+19.46 грн
1000+18.21 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
SMCJ58AJ SMCJ Series.pdf
Виробник: WeEn Semiconductors
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 65÷70.6V; 16.1A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 65...70.6V
Max. forward impulse current: 16.1A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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WNSC16650CWQ WNSC16650CWQ.pdf
WNSC16650CWQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.7V
Max. load current: 16A
Max. forward impulse current: 48A
Kind of package: tube
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NXPSC166506Q NXPSC166506Q.pdf
NXPSC166506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: tube
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NXPSC16650B6J NXPSC16650B6J.pdf
NXPSC16650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 96A
Kind of package: reel; tape
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WNSC2D16650CWQ WNSC2D16650CW.pdf
WNSC2D16650CWQ
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.8V
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 48A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
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WNSC6D16650B6J WNSC6D16650B6J.pdf
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 16A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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WNSC6D16650CW6Q WNSC6D16650CW6Q.pdf
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 1.65V
Load current: 16A
Max. load current: 32A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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BTA204-600D,127 BTA204-600D.pdf BTA204-600B.pdf
BTA204-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 727 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.63 грн
20+21.71 грн
22+19.46 грн
30+17.20 грн
100+17.04 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BTA204X-600F,127 BTA204X-600F.pdf
BTA204X-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 781 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+29.23 грн
17+24.72 грн
19+22.13 грн
30+19.63 грн
100+17.62 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BTA204X-600C,127 BTA204X-600C.pdf
BTA204X-600C,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600B,127 BTA204-600B.pdf
BTA204-600B,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204-600E,127 BTA204-600E.pdf
BTA204-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Max. off-state voltage: 0.6kV
Type of thyristor: triac
Kind of package: tube
Case: TO220AB
Features of semiconductor devices: sensitive gate
Mounting: THT
Gate current: 10mA
Max. load current: 4A
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
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BTA204W-600E,135 PHGLS30330-1.pdf?t.download=true&u=5oefqw BTA204W-600E.pdf
BTA204W-600E,135
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204X-600D,127 BTA204X-600D.pdf
BTA204X-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
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BTA204-600C,127 BTA204-600C.pdf
BTA204-600C,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
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BTA204-600F,127 BTA204-600F.pdf
BTA204-600F,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204S-1000C,118 BTA204S-1000C.pdf
BTA204S-1000C,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 1kV; 4A; DPAK; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com; sensitive gate
Type of thyristor: triac
Max. off-state voltage: 1kV
Max. load current: 4A
Case: DPAK
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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В кошику  од. на суму  грн.
BTA204S-600F,118 BTA204S-600F.pdf
BTA204S-600F,118
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; DPAK; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: DPAK
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600C,135 BTA204W-600C.pdf
BTA204W-600C,135
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 35mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 35mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
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BTA204W-600D,135 BTA204W-600D.pdf
BTA204W-600D,135
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 5mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 5mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204W-600F,135 BTA204W-600F.pdf BTA204W-600F.pdf
BTA204W-600F,135
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; SOT223; Igt: 25mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: SOT223
Gate current: 25mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: SMD
Kind of package: reel; tape
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BTA204X-600B,127 BTA204X-600B.pdf
BTA204X-600B,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 50mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 50mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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BTA204X-600E,127 BTA204X-600E.pdf
BTA204X-600E,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 4A; TO220FP; Igt: 10mA; Ifsm: 25A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 25A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
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NXPSC04650B NXPSC04650B.pdf _ween_psg2020.pdf
NXPSC04650B
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+46.77 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
NXPSC04650Q NXPSC04650.pdf _ween_psg2020.pdf
NXPSC04650Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.5V
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Load current: 4A
Max. load current: 8A
Max. forward impulse current: 24A
Max. off-state voltage: 650V
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+80.95 грн
7+67.65 грн
25+63.47 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NXPLQSC30650W6Q nxplqsc30650w.pdf
NXPLQSC30650W6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 30A
Max. forward impulse current: 50A
Kind of package: tube
Max. forward voltage: 1.95V
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NXPSC046506Q nxpsc04650.pdf
NXPSC046506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: tube
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NXPSC04650B6J nxpsc04650b.pdf
NXPSC04650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: reel; tape
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NXPSC04650D6J nxpsc04650d.pdf
NXPSC04650D6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: reel; tape
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NXPSC04650X6Q nxpsc04650x.pdf
NXPSC04650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 24A
Kind of package: tube
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NXPSC066506Q nxpsc06650.pdf
NXPSC066506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: tube
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В кошику  од. на суму  грн.
NXPSC06650B6J nxpsc06650b.pdf
NXPSC06650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: reel; tape
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NXPSC06650D6J nxpsc06650d.pdf
NXPSC06650D6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: reel; tape
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NXPSC06650X6Q nxpsc06650x.pdf
NXPSC06650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 36A
Kind of package: tube
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В кошику  од. на суму  грн.
NXPSC086506Q nxpsc08650.pdf
NXPSC086506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: tube
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В кошику  од. на суму  грн.
NXPSC08650B6J nxpsc08650b.pdf
NXPSC08650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: reel; tape
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NXPSC08650D6J nxpsc08650d.pdf
NXPSC08650D6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 8A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: reel; tape
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NXPSC08650X6Q nxpsc08650x.pdf
NXPSC08650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 48A
Kind of package: tube
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NXPSC106506Q NXPSC106506Q.pdf
NXPSC106506Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
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NXPSC10650B6J NXPSC10650B6J.pdf
NXPSC10650B6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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В кошику  од. на суму  грн.
NXPSC10650D6J NXPSC10650D6J.pdf
NXPSC10650D6J
Виробник: WeEn Semiconductors
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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В кошику  од. на суму  грн.
NXPSC10650X6Q NXPSC10650X6Q.pdf
NXPSC10650X6Q
Виробник: WeEn Semiconductors
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: tube
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5.0SMDJ78CAJ 5.0SMDJ.pdf
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 86.7÷95.8V; 39.7A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 78V
Breakdown voltage: 86.7...95.8V
Max. forward impulse current: 39.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 5.0SMDJ
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BT151U-500C,127
BT151U-500C,127
Виробник: WeEn Semiconductors
Category: SMD/THT thyristors
Description: Thyristor; 500V; Ifmax: 12A; 7.5A; Igt: 2mA; IPAK; THT; tube; 2us
Type of thyristor: thyristor
Max. off-state voltage: 500V
Max. load current: 12A
Load current: 7.5A
Gate current: 2mA
Case: IPAK
Mounting: THT
Kind of package: tube
Max. forward impulse current: 100A
Turn-on time: 2µs
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BTA410Y-600BT,127 BTA410Y-600BT.pdf
BTA410Y-600BT,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 10A; TO220AB; Igt: 50mA; Ifsm: 100A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220AB
Gate current: 50mA
Max. forward impulse current: 100A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
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BTA206-800CT,127 bta206-800ct.pdf
BTA206-800CT,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 35mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
на замовлення 954 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+39.57 грн
15+29.57 грн
50+24.39 грн
100+22.63 грн
500+21.55 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BTA206X-800ET,127
BTA206X-800ET,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220FP; Igt: 10mA; Ifsm: 60A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220FP
Gate current: 10mA
Max. forward impulse current: 60A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 984 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+66.56 грн
10+46.44 грн
25+39.34 грн
50+34.58 грн
100+30.65 грн
500+24.30 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BTA206-800ET,127 PHGLS23949-1.pdf?t.download=true&u=5oefqw bta206-800et.pdf
BTA206-800ET,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 6A; TO220AB; Igt: 10mA; Ifsm: 66A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 6A
Case: TO220AB
Gate current: 10mA
Max. forward impulse current: 66A
Technology: 3Q; Hi-Com
Features of semiconductor devices: high temperature
Mounting: THT
Kind of package: tube
на замовлення 990 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+58.46 грн
13+32.57 грн
25+25.89 грн
100+23.22 грн
500+21.63 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BTA202X-600D,127 BTA202X-600D_127.pdf
BTA202X-600D,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 600V; 2A; TO220FP; Igt: 5mA; Ifsm: 14A; 3Q,Hi-Com
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 2A
Case: TO220FP
Gate current: 5mA
Max. forward impulse current: 14A
Technology: 3Q; Hi-Com
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
на замовлення 642 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.38 грн
30+17.46 грн
100+15.70 грн
500+13.86 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BT138X-800 BT138X-800.pdf _ween_psg2020.pdf
BT138X-800
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 12A; TO220FP; Igt: 35/70mA; Ifsm: 95A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: TO220FP
Gate current: 35/70mA
Max. forward impulse current: 95A
Technology: 4Q
Features of semiconductor devices: sensitive gate
Mounting: THT
Kind of package: tube
товару немає в наявності
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BUJD203A,127 BUJD203A.pdf
BUJD203A,127
Виробник: WeEn Semiconductors
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 425V; 4A; 80W; TO220AB
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: NPN
Kind of package: tube
Collector current: 4A
Current gain: 11...22
Collector-emitter voltage: 425V
Power dissipation: 80W
Polarisation: bipolar
Case: TO220AB
Mounting: THT
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P6SMBJ28CAJ P6SMBJ.pdf
Виробник: WeEn Semiconductors
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.33÷34.16V; 13.3A; bidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.33...34.16V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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BTA425Z-800CTQ BTA425Z-800CT.pdf
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 25A; SOT1292,TO3P; Igt: 35mA; Ifsm: 250A; 3Q,Hi-Com
Features of semiconductor devices: high temperature; sensitive gate
Case: SOT1292; TO3P
Mounting: THT
Type of thyristor: triac
Kind of package: tube
Gate current: 35mA
Max. load current: 25A
Max. forward impulse current: 250A
Max. off-state voltage: 0.8kV
Technology: 3Q; Hi-Com
товару немає в наявності
В кошику  од. на суму  грн.
BTA201-800ER,412 bta201-800er.pdf
BTA201-800ER,412
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 10mA; Ifsm: 12.5A; 3Q,Hi-Com
Case: TO92
Mounting: THT
Kind of package: bulk
Max. off-state voltage: 0.8kV
Features of semiconductor devices: sensitive gate
Type of thyristor: triac
Gate current: 10mA
Max. load current: 1A
Max. forward impulse current: 12.5A
Technology: 3Q; Hi-Com
товару немає в наявності
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MAC223A6,127 MAC223A6.pdf
MAC223A6,127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 400V; 25A; TO220AB; Igt: 50/75mA; Ifsm: 190A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.4kV
Max. load current: 25A
Case: TO220AB
Gate current: 50/75mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 190A
Technology: 4Q
на замовлення 764 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+157.40 грн
10+80.18 грн
25+74.33 грн
50+70.99 грн
100+65.98 грн
250+60.97 грн
500+56.79 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BT139-800.127 BT139-800.pdf _ween_psg2020.pdf
BT139-800.127
Виробник: WeEn Semiconductors
Category: Triacs
Description: Triac; 800V; 16A; TO220AB; Igt: 35/70mA; Ifsm: 155A; 4Q
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 16A
Case: TO220AB
Gate current: 35/70mA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: sensitive gate
Max. forward impulse current: 155A
Technology: 4Q
товару немає в наявності
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BYC30W-600PQ BYC30W-600P.pdf
BYC30W-600PQ
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 300A; Ufmax: 1.8V; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247AC Modified
Max. forward voltage: 1.8V
Reverse recovery time: 22ns
на замовлення 230 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+118.72 грн
30+61.80 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYC30X-600P,127 byc30x-600p.pdf _ween_psg2020.pdf
BYC30X-600P,127
Виробник: WeEn Semiconductors
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; Ufmax: 2.75V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: SOD113; TO220FP-2
Max. forward voltage: 2.75V
Reverse recovery time: 35ns
на замовлення 718 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+140.31 грн
5+111.08 грн
10+101.89 грн
25+90.20 грн
50+82.68 грн
100+75.17 грн
250+70.99 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
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