Продукція > YAGEO XSEMI > Всі товари виробника YAGEO XSEMI (532) > Сторінка 9 з 9
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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XP6P250N | YAGEO XSEMI |
 Description: YAGEO XSEMI - XP6P250N - Leistungs-MOSFET, p-Kanal, 60 V, 1.6 A, 0.25 ohm, SOT-23S, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 1.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 1.25W SVHC: To Be Advised Bauform - Transistor: SOT-23S Anzahl der Pins: 3Pin(s) Produktpalette: XP6P250N Series productTraceability: No usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.25ohm |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||
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XP6P250N | YAGEO XSEMI |
Description: MOSFET P-CH 60V 1.6A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.6A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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XP6P250N | YAGEO XSEMI |
Description: YAGEO XSEMI - XP6P250N - Leistungs-MOSFET, p-Kanal, 60 V, 1.6 A, 0.25 ohm, SOT-23S, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 1.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 1.25W SVHC: To Be Advised Bauform - Transistor: SOT-23S Anzahl der Pins: 3Pin(s) Produktpalette: XP6P250N Series productTraceability: No usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.25ohm |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||
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XP6P250N | YAGEO XSemi |
MOSFETs P-CH -60V -1. 6A SOT-23S |
на замовлення 2980 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP6P250N | YAGEO XSEMI |
Description: MOSFET P-CH 60V 1.6A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.6A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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XP70SL1K4AH | YAGEO XSEMI |
Description: MOSFET N-CH 700V 3.2A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Power Dissipation (Max): 2W (Ta), 28.4W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V |
на замовлення 998 шт: термін постачання 21-31 дні (днів) |
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XP70SL1K4AH | YAGEO XSEMI |
Description: YAGEO XSEMI - XP70SL1K4AH - Leistungs-MOSFET, n-Kanal, 700 V, 3.2 A, 1.4 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 700V rohsCompliant: Y-EX Dauer-Drainstrom Id: 3.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 5V Verlustleistung: 2W SVHC: To Be Advised Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: XP70SL1K4A Series productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1.4ohm |
на замовлення 121 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP70SL1K4AH | YAGEO XSEMI |
Description: YAGEO XSEMI - XP70SL1K4AH - Leistungs-MOSFET, n-Kanal, 700 V, 3.2 A, 1.4 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 700V rohsCompliant: Y-EX Dauer-Drainstrom Id: 3.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 5V Verlustleistung: 2W SVHC: To Be Advised Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: XP70SL1K4A Series productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1.4ohm |
на замовлення 121 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||
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XP70SL1K4AH | YAGEO XSemi |
MOSFETs N-CH 700V 3.2 A TO-252 |
на замовлення 2972 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP70SL1K4AH | YAGEO XSEMI |
Description: MOSFET N-CH 700V 3.2A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Power Dissipation (Max): 2W (Ta), 28.4W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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XP70T03GJ | YAGEO XSemi | MOSFETs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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XP83T03GJB | YAGEO XSEMI |
Description: MOSFET N-CH 30V 75A TO251S Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-251S Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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XP83T03GJB | YAGEO XSemi |
MOSFETs N-CH 30V 75A TO-251S |
на замовлення 7972 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP83T03GJB | YAGEO XSEMI |
Description: YAGEO XSEMI - XP83T03GJB - Leistungs-MOSFET, n-Kanal, 30 V, 75 A, 0.006 ohm, TO-251, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 60W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pin(s) Produktpalette: XP83T03 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.006ohm SVHC: To Be Advised |
на замовлення 171 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP8NA1R2TL | YAGEO XSEMI |
Description: YAGEO XSEMI - XP8NA1R2TL - Leistungs-MOSFET, n-Kanal, 80 V, 400 A, 1200 µohm, TOLL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 400A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 5V Verlustleistung: 3.75W SVHC: To Be Advised Bauform - Transistor: TOLL Anzahl der Pins: 9Pin(s) Produktpalette: XP8NA1R2 Series productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1200µohm |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 16 шт В кошику од. на суму грн. | ||||||||||||
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XP8NA1R2TL | YAGEO XSEMI |
Description: MOSFET N-CH 80V 300A TOLL Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 3.75W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 424 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25120 pF @ 60 V |
на замовлення 977 шт: термін постачання 21-31 дні (днів) |
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XP8NA1R2TL | YAGEO XSEMI |
Description: YAGEO XSEMI - XP8NA1R2TL - Leistungs-MOSFET, n-Kanal, 80 V, 400 A, 1200 µohm, TOLL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 400A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 5V Verlustleistung: 3.75W SVHC: To Be Advised Bauform - Transistor: TOLL Anzahl der Pins: 9Pin(s) Produktpalette: XP8NA1R2 Series productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1200µohm |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP8NA1R2TL | YAGEO XSemi |
MOSFETs N-CH 80V 300A TOLL |
на замовлення 1931 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP8NA1R2TL | YAGEO XSEMI |
Description: MOSFET N-CH 80V 300A TOLL Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 3.75W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 424 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25120 pF @ 60 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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XP8NA2R2CXT | YAGEO XSEMI |
Description: YAGEO XSEMI - XP8NA2R2CXT - Leistungs-MOSFET, n-Kanal, 80 V, 168 A, 2200 µohm, PMPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 168A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 5W SVHC: To Be Advised Bauform - Transistor: PMPAK Anzahl der Pins: 8Pin(s) Produktpalette: XP8NA2R2C Series productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2200µohm |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP8NA2R2CXT | YAGEO XSEMI |
Description: MOSFET N-CH 80V 35A 168A PMPAK Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 168A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 113.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9328 pF @ 60 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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XP8NA2R2CXT | YAGEO XSEMI |
Description: MOSFET N-CH 80V 35A 168A PMPAK Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 168A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 113.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PMPAK® 5 x 6 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9328 pF @ 60 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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XP8NA2R2CXT | YAGEO XSemi |
MOSFETs N-CH 80V 35A PMPAK-5x6X |
на замовлення 2999 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP8NA2R2CXT | YAGEO XSEMI |
Description: YAGEO XSEMI - XP8NA2R2CXT - Leistungs-MOSFET, n-Kanal, 80 V, 168 A, 2200 µohm, PMPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 168A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 5W SVHC: To Be Advised Bauform - Transistor: PMPAK Anzahl der Pins: 8Pin(s) Produktpalette: XP8NA2R2C Series productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2200µohm |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||
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XP9452GG | YAGEO XSEMI |
Description: YAGEO XSEMI - XP9452GG - Leistungs-MOSFET, n-Kanal, 20 V, 4 A, 0.038 ohm, SOT-89, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: Y-EX Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: SOT-89 Anzahl der Pins: 3Pin(s) Produktpalette: XP9452 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.038ohm SVHC: To Be Advised |
на замовлення 970 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||
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XP9452GG | YAGEO XSEMI |
Description: MOSFET N-CH 20V 4A SOT89 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-89 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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XP9452GG | YAGEO XSemi |
MOSFETs N-CH 20V 4A S OT-89 |
на замовлення 987 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP9452GG | YAGEO XSEMI |
Description: YAGEO XSEMI - XP9452GG - Leistungs-MOSFET, n-Kanal, 20 V, 4 A, 0.038 ohm, SOT-89, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: Y-EX Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: SOT-89 Anzahl der Pins: 3Pin(s) Produktpalette: XP9452 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.038ohm SVHC: To Be Advised |
на замовлення 970 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||
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XP9452GG | YAGEO XSEMI |
Description: MOSFET N-CH 20V 4A SOT89 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-89 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 20 V |
на замовлення 977 шт: термін постачання 21-31 дні (днів) |
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XP9561GH | YAGEO XSemi |
MOSFETs P-CH -40V -45 A TO-252 |
на замовлення 2763 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP9561GH | YAGEO XSEMI |
Description: MOSFET P-CH 40V 45A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V Power Dissipation (Max): 54.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V |
на замовлення 995 шт: термін постачання 21-31 дні (днів) |
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XP9561GH | YAGEO XSEMI |
Description: YAGEO XSEMI - XP9561GH - Leistungs-MOSFET, p-Kanal, 40 V, 45 A, 0.016 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 45A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 54.3W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: XP9561 Series productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.016ohm SVHC: To Be Advised |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP9561GH | YAGEO XSEMI |
Description: YAGEO XSEMI - XP9561GH - Leistungs-MOSFET, p-Kanal, 40 V, 45 A, 0.016 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 45A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 54.3W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: XP9561 Series productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.016ohm SVHC: To Be Advised |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | ||||||||||||
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XP9561GH | YAGEO XSEMI |
Description: MOSFET P-CH 40V 45A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V Power Dissipation (Max): 54.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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XP9561GI | YAGEO XSEMI |
Description: MOSFET P-CH 40V 36A TO220CFM Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V Power Dissipation (Max): 33.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220CFM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V |
на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
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XP9561GI | YAGEO XSEMI |
Description: YAGEO XSEMI - XP9561GI - Leistungs-MOSFET, p-Kanal, 40 V, 36 A, 0.016 ohm, TO-220CFM, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 33.7W Bauform - Transistor: TO-220CFM Anzahl der Pins: 3Pin(s) Produktpalette: XP9561 Series productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.016ohm SVHC: To Be Advised |
на замовлення 907 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP9561GI | YAGEO XSemi |
MOSFETs P-CH -40V -36 A TO-220CFM |
на замовлення 408 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP9561GM | YAGEO XSEMI |
Description: MOSFET P CH -40V 9.4A SO-8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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XP9565BGH | YAGEO XSEMI |
Description: YAGEO XSEMI - XP9565BGH - Leistungs-MOSFET, p-Kanal, 40 V, 17 A, 0.052 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 25W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: To Be Advised |
на замовлення 2728 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP9565BGH | YAGEO XSEMI |
Description: MOSFET P-CH 40V 17A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V |
на замовлення 969 шт: термін постачання 21-31 дні (днів) |
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XP9565BGH | YAGEO XSemi |
MOSFET P-CH -40V -17 A TO-252 |
на замовлення 2964 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP9565BGH | YAGEO XSEMI |
Description: YAGEO XSEMI - XP9565BGH - Leistungs-MOSFET, p-Kanal, 40 V, 17 A, 0.052 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 25W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.052ohm SVHC: To Be Advised |
на замовлення 2728 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||
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XP9565BGH | YAGEO XSEMI |
Description: MOSFET P-CH 40V 17A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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XP9565GEM | YAGEO XSEMI |
Description: YAGEO XSEMI - XP9565GEM - Leistungs-MOSFET, p-Kanal, 40 V, 6.5 A, 0.038 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 2.5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: XP9565 Series productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.038ohm SVHC: To Be Advised |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||
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XP9565GEM | YAGEO XSEMI |
Description: YAGEO XSEMI - XP9565GEM - Leistungs-MOSFET, p-Kanal, 40 V, 6.5 A, 0.038 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 2.5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: XP9565 Series productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.038ohm SVHC: To Be Advised |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP9565GEM | YAGEO XSemi |
MOSFET P-CH -40V -6. 5A SO-8 |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP9575GH | YAGEO XSEMI |
Description: MOSFET P-CH 60V 15A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 12A, 10V Power Dissipation (Max): 31.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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XP9575GH | YAGEO XSEMI |
Description: YAGEO XSEMI - XP9575GH - Leistungs-MOSFET, p-Kanal, 60 V, 15 A, 0.09 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 31.3W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: XP9575 Series productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.09ohm SVHC: To Be Advised |
на замовлення 128 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||
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XP9575GH | YAGEO XSEMI |
Description: MOSFET P-CH 60V 15A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 12A, 10V Power Dissipation (Max): 31.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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XP9575GH | YAGEO XSEMI |
Description: YAGEO XSEMI - XP9575GH - Leistungs-MOSFET, p-Kanal, 60 V, 15 A, 0.09 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 31.3W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: XP9575 Series productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.09ohm SVHC: To Be Advised |
на замовлення 128 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP9575GH | YAGEO XSemi |
MOSFET P-CH -60V -15 A TO-252 |
на замовлення 2970 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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XP9926GM | YAGEO XSemi | MOSFETs |
товару немає в наявності |
В кошику од. на суму грн. |
| XP6P250N |
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Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP6P250N - Leistungs-MOSFET, p-Kanal, 60 V, 1.6 A, 0.25 ohm, SOT-23S, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 1.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 1.25W
SVHC: To Be Advised
Bauform - Transistor: SOT-23S
Anzahl der Pins: 3Pin(s)
Produktpalette: XP6P250N Series
productTraceability: No
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.25ohm
Description: YAGEO XSEMI - XP6P250N - Leistungs-MOSFET, p-Kanal, 60 V, 1.6 A, 0.25 ohm, SOT-23S, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 1.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 1.25W
SVHC: To Be Advised
Bauform - Transistor: SOT-23S
Anzahl der Pins: 3Pin(s)
Produktpalette: XP6P250N Series
productTraceability: No
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.25ohm
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
| XP6P250N |
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Виробник: YAGEO XSEMI
Description: MOSFET P-CH 60V 1.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Description: MOSFET P-CH 60V 1.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.92 грн |
| 10+ | 71.78 грн |
| 100+ | 55.85 грн |
| 500+ | 44.43 грн |
| 1000+ | 36.19 грн |
| XP6P250N |
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Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP6P250N - Leistungs-MOSFET, p-Kanal, 60 V, 1.6 A, 0.25 ohm, SOT-23S, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 1.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 1.25W
SVHC: To Be Advised
Bauform - Transistor: SOT-23S
Anzahl der Pins: 3Pin(s)
Produktpalette: XP6P250N Series
productTraceability: No
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.25ohm
Description: YAGEO XSEMI - XP6P250N - Leistungs-MOSFET, p-Kanal, 60 V, 1.6 A, 0.25 ohm, SOT-23S, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 1.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 1.25W
SVHC: To Be Advised
Bauform - Transistor: SOT-23S
Anzahl der Pins: 3Pin(s)
Produktpalette: XP6P250N Series
productTraceability: No
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.25ohm
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
| XP6P250N |
|
Виробник: YAGEO XSemi
MOSFETs P-CH -60V -1. 6A SOT-23S
MOSFETs P-CH -60V -1. 6A SOT-23S
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)
| XP6P250N |
|
Виробник: YAGEO XSEMI
Description: MOSFET P-CH 60V 1.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Description: MOSFET P-CH 60V 1.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| XP70SL1K4AH |
|
Виробник: YAGEO XSEMI
Description: MOSFET N-CH 700V 3.2A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 2W (Ta), 28.4W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
Description: MOSFET N-CH 700V 3.2A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 2W (Ta), 28.4W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 157.55 грн |
| 10+ | 125.75 грн |
| 100+ | 100.10 грн |
| 500+ | 79.49 грн |
| XP70SL1K4AH |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP70SL1K4AH - Leistungs-MOSFET, n-Kanal, 700 V, 3.2 A, 1.4 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 700V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 3.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 2W
SVHC: To Be Advised
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: XP70SL1K4A Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1.4ohm
Description: YAGEO XSEMI - XP70SL1K4AH - Leistungs-MOSFET, n-Kanal, 700 V, 3.2 A, 1.4 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 700V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 3.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 2W
SVHC: To Be Advised
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: XP70SL1K4A Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1.4ohm
на замовлення 121 шт:
термін постачання 21-31 дні (днів)
| XP70SL1K4AH |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP70SL1K4AH - Leistungs-MOSFET, n-Kanal, 700 V, 3.2 A, 1.4 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 700V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 3.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 2W
SVHC: To Be Advised
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: XP70SL1K4A Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1.4ohm
Description: YAGEO XSEMI - XP70SL1K4AH - Leistungs-MOSFET, n-Kanal, 700 V, 3.2 A, 1.4 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 700V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 3.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 2W
SVHC: To Be Advised
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: XP70SL1K4A Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1.4ohm
на замовлення 121 шт:
термін постачання 21-31 дні (днів)
| XP70SL1K4AH |
|
Виробник: YAGEO XSemi
MOSFETs N-CH 700V 3.2 A TO-252
MOSFETs N-CH 700V 3.2 A TO-252
на замовлення 2972 шт:
термін постачання 21-30 дні (днів)
| XP70SL1K4AH |
|
Виробник: YAGEO XSEMI
Description: MOSFET N-CH 700V 3.2A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 2W (Ta), 28.4W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
Description: MOSFET N-CH 700V 3.2A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 2W (Ta), 28.4W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| XP83T03GJB |
|
Виробник: YAGEO XSEMI
Description: MOSFET N-CH 30V 75A TO251S
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Description: MOSFET N-CH 30V 75A TO251S
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| XP83T03GJB |
|
Виробник: YAGEO XSemi
MOSFETs N-CH 30V 75A TO-251S
MOSFETs N-CH 30V 75A TO-251S
на замовлення 7972 шт:
термін постачання 21-30 дні (днів)
| XP83T03GJB |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP83T03GJB - Leistungs-MOSFET, n-Kanal, 30 V, 75 A, 0.006 ohm, TO-251, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 75A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 60W
Bauform - Transistor: TO-251
Anzahl der Pins: 3Pin(s)
Produktpalette: XP83T03 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.006ohm
SVHC: To Be Advised
Description: YAGEO XSEMI - XP83T03GJB - Leistungs-MOSFET, n-Kanal, 30 V, 75 A, 0.006 ohm, TO-251, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 75A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 60W
Bauform - Transistor: TO-251
Anzahl der Pins: 3Pin(s)
Produktpalette: XP83T03 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.006ohm
SVHC: To Be Advised
на замовлення 171 шт:
термін постачання 21-31 дні (днів)
| XP8NA1R2TL |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP8NA1R2TL - Leistungs-MOSFET, n-Kanal, 80 V, 400 A, 1200 µohm, TOLL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 400A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 3.75W
SVHC: To Be Advised
Bauform - Transistor: TOLL
Anzahl der Pins: 9Pin(s)
Produktpalette: XP8NA1R2 Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1200µohm
Description: YAGEO XSEMI - XP8NA1R2TL - Leistungs-MOSFET, n-Kanal, 80 V, 400 A, 1200 µohm, TOLL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 400A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 3.75W
SVHC: To Be Advised
Bauform - Transistor: TOLL
Anzahl der Pins: 9Pin(s)
Produktpalette: XP8NA1R2 Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1200µohm
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
| XP8NA1R2TL |
|
Виробник: YAGEO XSEMI
Description: MOSFET N-CH 80V 300A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.75W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 424 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25120 pF @ 60 V
Description: MOSFET N-CH 80V 300A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.75W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 424 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25120 pF @ 60 V
на замовлення 977 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 358.99 грн |
| 10+ | 229.45 грн |
| 50+ | 179.56 грн |
| 100+ | 153.44 грн |
| 500+ | 135.88 грн |
| XP8NA1R2TL |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP8NA1R2TL - Leistungs-MOSFET, n-Kanal, 80 V, 400 A, 1200 µohm, TOLL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 400A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 3.75W
SVHC: To Be Advised
Bauform - Transistor: TOLL
Anzahl der Pins: 9Pin(s)
Produktpalette: XP8NA1R2 Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1200µohm
Description: YAGEO XSEMI - XP8NA1R2TL - Leistungs-MOSFET, n-Kanal, 80 V, 400 A, 1200 µohm, TOLL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 400A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 3.75W
SVHC: To Be Advised
Bauform - Transistor: TOLL
Anzahl der Pins: 9Pin(s)
Produktpalette: XP8NA1R2 Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1200µohm
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
| XP8NA1R2TL |
|
Виробник: YAGEO XSemi
MOSFETs N-CH 80V 300A TOLL
MOSFETs N-CH 80V 300A TOLL
на замовлення 1931 шт:
термін постачання 21-30 дні (днів)
| XP8NA1R2TL |
|
Виробник: YAGEO XSEMI
Description: MOSFET N-CH 80V 300A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.75W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 424 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25120 pF @ 60 V
Description: MOSFET N-CH 80V 300A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 3.75W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 424 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25120 pF @ 60 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| XP8NA2R2CXT |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP8NA2R2CXT - Leistungs-MOSFET, n-Kanal, 80 V, 168 A, 2200 µohm, PMPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 168A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 5W
SVHC: To Be Advised
Bauform - Transistor: PMPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: XP8NA2R2C Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2200µohm
Description: YAGEO XSEMI - XP8NA2R2CXT - Leistungs-MOSFET, n-Kanal, 80 V, 168 A, 2200 µohm, PMPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 168A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 5W
SVHC: To Be Advised
Bauform - Transistor: PMPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: XP8NA2R2C Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2200µohm
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
| XP8NA2R2CXT |
|
Виробник: YAGEO XSEMI
Description: MOSFET N-CH 80V 35A 168A PMPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 168A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9328 pF @ 60 V
Description: MOSFET N-CH 80V 35A 168A PMPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 168A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9328 pF @ 60 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| XP8NA2R2CXT |
|
Виробник: YAGEO XSEMI
Description: MOSFET N-CH 80V 35A 168A PMPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 168A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9328 pF @ 60 V
Description: MOSFET N-CH 80V 35A 168A PMPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 168A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 113.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9328 pF @ 60 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 270.42 грн |
| 10+ | 181.75 грн |
| 100+ | 130.67 грн |
| 500+ | 103.80 грн |
| 1000+ | 96.54 грн |
| XP8NA2R2CXT |
|
Виробник: YAGEO XSemi
MOSFETs N-CH 80V 35A PMPAK-5x6X
MOSFETs N-CH 80V 35A PMPAK-5x6X
на замовлення 2999 шт:
термін постачання 21-30 дні (днів)
| XP8NA2R2CXT |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP8NA2R2CXT - Leistungs-MOSFET, n-Kanal, 80 V, 168 A, 2200 µohm, PMPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 168A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 5W
SVHC: To Be Advised
Bauform - Transistor: PMPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: XP8NA2R2C Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2200µohm
Description: YAGEO XSEMI - XP8NA2R2CXT - Leistungs-MOSFET, n-Kanal, 80 V, 168 A, 2200 µohm, PMPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 168A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 5W
SVHC: To Be Advised
Bauform - Transistor: PMPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: XP8NA2R2C Series
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2200µohm
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
| XP9452GG |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP9452GG - Leistungs-MOSFET, n-Kanal, 20 V, 4 A, 0.038 ohm, SOT-89, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 1.25W
Bauform - Transistor: SOT-89
Anzahl der Pins: 3Pin(s)
Produktpalette: XP9452 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.038ohm
SVHC: To Be Advised
Description: YAGEO XSEMI - XP9452GG - Leistungs-MOSFET, n-Kanal, 20 V, 4 A, 0.038 ohm, SOT-89, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 1.25W
Bauform - Transistor: SOT-89
Anzahl der Pins: 3Pin(s)
Produktpalette: XP9452 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.038ohm
SVHC: To Be Advised
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
| XP9452GG |
|
Виробник: YAGEO XSEMI
Description: MOSFET N-CH 20V 4A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 20 V
Description: MOSFET N-CH 20V 4A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 20 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| XP9452GG |
|
Виробник: YAGEO XSemi
MOSFETs N-CH 20V 4A S OT-89
MOSFETs N-CH 20V 4A S OT-89
на замовлення 987 шт:
термін постачання 21-30 дні (днів)
| XP9452GG |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP9452GG - Leistungs-MOSFET, n-Kanal, 20 V, 4 A, 0.038 ohm, SOT-89, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 1.25W
Bauform - Transistor: SOT-89
Anzahl der Pins: 3Pin(s)
Produktpalette: XP9452 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.038ohm
SVHC: To Be Advised
Description: YAGEO XSEMI - XP9452GG - Leistungs-MOSFET, n-Kanal, 20 V, 4 A, 0.038 ohm, SOT-89, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 1.25W
Bauform - Transistor: SOT-89
Anzahl der Pins: 3Pin(s)
Produktpalette: XP9452 Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.038ohm
SVHC: To Be Advised
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
| XP9452GG |
|
Виробник: YAGEO XSEMI
Description: MOSFET N-CH 20V 4A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 20 V
Description: MOSFET N-CH 20V 4A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 20 V
на замовлення 977 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.62 грн |
| 13+ | 24.15 грн |
| 100+ | 16.36 грн |
| 500+ | 12.00 грн |
| XP9561GH |
|
Виробник: YAGEO XSemi
MOSFETs P-CH -40V -45 A TO-252
MOSFETs P-CH -40V -45 A TO-252
на замовлення 2763 шт:
термін постачання 21-30 дні (днів)
| XP9561GH |
|
Виробник: YAGEO XSEMI
Description: MOSFET P-CH 40V 45A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 54.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
Description: MOSFET P-CH 40V 45A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 54.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
на замовлення 995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.22 грн |
| 10+ | 90.88 грн |
| 100+ | 70.70 грн |
| 500+ | 56.23 грн |
| XP9561GH |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP9561GH - Leistungs-MOSFET, p-Kanal, 40 V, 45 A, 0.016 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 45A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 54.3W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: XP9561 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.016ohm
SVHC: To Be Advised
Description: YAGEO XSEMI - XP9561GH - Leistungs-MOSFET, p-Kanal, 40 V, 45 A, 0.016 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 45A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 54.3W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: XP9561 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.016ohm
SVHC: To Be Advised
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| XP9561GH |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP9561GH - Leistungs-MOSFET, p-Kanal, 40 V, 45 A, 0.016 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 45A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 54.3W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: XP9561 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.016ohm
SVHC: To Be Advised
Description: YAGEO XSEMI - XP9561GH - Leistungs-MOSFET, p-Kanal, 40 V, 45 A, 0.016 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 45A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 54.3W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: XP9561 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.016ohm
SVHC: To Be Advised
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| XP9561GH |
|
Виробник: YAGEO XSEMI
Description: MOSFET P-CH 40V 45A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 54.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
Description: MOSFET P-CH 40V 45A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 54.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| XP9561GI |
|
Виробник: YAGEO XSEMI
Description: MOSFET P-CH 40V 36A TO220CFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 33.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220CFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
Description: MOSFET P-CH 40V 36A TO220CFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 33.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220CFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.52 грн |
| 50+ | 50.63 грн |
| 100+ | 45.18 грн |
| 500+ | 33.40 грн |
| 1000+ | 30.51 грн |
| 2000+ | 28.08 грн |
| XP9561GI |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP9561GI - Leistungs-MOSFET, p-Kanal, 40 V, 36 A, 0.016 ohm, TO-220CFM, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 36A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 33.7W
Bauform - Transistor: TO-220CFM
Anzahl der Pins: 3Pin(s)
Produktpalette: XP9561 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.016ohm
SVHC: To Be Advised
Description: YAGEO XSEMI - XP9561GI - Leistungs-MOSFET, p-Kanal, 40 V, 36 A, 0.016 ohm, TO-220CFM, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 36A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 33.7W
Bauform - Transistor: TO-220CFM
Anzahl der Pins: 3Pin(s)
Produktpalette: XP9561 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.016ohm
SVHC: To Be Advised
на замовлення 907 шт:
термін постачання 21-31 дні (днів)
| XP9561GI |
|
Виробник: YAGEO XSemi
MOSFETs P-CH -40V -36 A TO-220CFM
MOSFETs P-CH -40V -36 A TO-220CFM
на замовлення 408 шт:
термін постачання 21-30 дні (днів)
| XP9561GM |
|
Виробник: YAGEO XSEMI
Description: MOSFET P CH -40V 9.4A SO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
Description: MOSFET P CH -40V 9.4A SO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| XP9565BGH |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP9565BGH - Leistungs-MOSFET, p-Kanal, 40 V, 17 A, 0.052 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 25W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.052ohm
SVHC: To Be Advised
Description: YAGEO XSEMI - XP9565BGH - Leistungs-MOSFET, p-Kanal, 40 V, 17 A, 0.052 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 25W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.052ohm
SVHC: To Be Advised
на замовлення 2728 шт:
термін постачання 21-31 дні (днів)
| XP9565BGH |
|
Виробник: YAGEO XSEMI
Description: MOSFET P-CH 40V 17A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Description: MOSFET P-CH 40V 17A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
на замовлення 969 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.41 грн |
| 10+ | 53.21 грн |
| 100+ | 41.37 грн |
| 500+ | 32.91 грн |
| XP9565BGH |
|
Виробник: YAGEO XSemi
MOSFET P-CH -40V -17 A TO-252
MOSFET P-CH -40V -17 A TO-252
на замовлення 2964 шт:
термін постачання 21-30 дні (днів)
| XP9565BGH |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP9565BGH - Leistungs-MOSFET, p-Kanal, 40 V, 17 A, 0.052 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 25W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.052ohm
SVHC: To Be Advised
Description: YAGEO XSEMI - XP9565BGH - Leistungs-MOSFET, p-Kanal, 40 V, 17 A, 0.052 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 25W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.052ohm
SVHC: To Be Advised
на замовлення 2728 шт:
термін постачання 21-31 дні (днів)
| XP9565BGH |
|
Виробник: YAGEO XSEMI
Description: MOSFET P-CH 40V 17A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Description: MOSFET P-CH 40V 17A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| XP9565GEM |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP9565GEM - Leistungs-MOSFET, p-Kanal, 40 V, 6.5 A, 0.038 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: XP9565 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.038ohm
SVHC: To Be Advised
Description: YAGEO XSEMI - XP9565GEM - Leistungs-MOSFET, p-Kanal, 40 V, 6.5 A, 0.038 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: XP9565 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.038ohm
SVHC: To Be Advised
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
| XP9565GEM |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP9565GEM - Leistungs-MOSFET, p-Kanal, 40 V, 6.5 A, 0.038 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: XP9565 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.038ohm
SVHC: To Be Advised
Description: YAGEO XSEMI - XP9565GEM - Leistungs-MOSFET, p-Kanal, 40 V, 6.5 A, 0.038 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: XP9565 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.038ohm
SVHC: To Be Advised
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
| XP9565GEM |
|
Виробник: YAGEO XSemi
MOSFET P-CH -40V -6. 5A SO-8
MOSFET P-CH -40V -6. 5A SO-8
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
| XP9575GH |
|
Виробник: YAGEO XSEMI
Description: MOSFET P-CH 60V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12A, 10V
Power Dissipation (Max): 31.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Description: MOSFET P-CH 60V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12A, 10V
Power Dissipation (Max): 31.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| XP9575GH |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP9575GH - Leistungs-MOSFET, p-Kanal, 60 V, 15 A, 0.09 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 15A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 31.3W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: XP9575 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.09ohm
SVHC: To Be Advised
Description: YAGEO XSEMI - XP9575GH - Leistungs-MOSFET, p-Kanal, 60 V, 15 A, 0.09 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 15A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 31.3W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: XP9575 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.09ohm
SVHC: To Be Advised
на замовлення 128 шт:
термін постачання 21-31 дні (днів)
| XP9575GH |
|
Виробник: YAGEO XSEMI
Description: MOSFET P-CH 60V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12A, 10V
Power Dissipation (Max): 31.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Description: MOSFET P-CH 60V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12A, 10V
Power Dissipation (Max): 31.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| XP9575GH |
|
Виробник: YAGEO XSEMI
Description: YAGEO XSEMI - XP9575GH - Leistungs-MOSFET, p-Kanal, 60 V, 15 A, 0.09 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 15A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 31.3W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: XP9575 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.09ohm
SVHC: To Be Advised
Description: YAGEO XSEMI - XP9575GH - Leistungs-MOSFET, p-Kanal, 60 V, 15 A, 0.09 ohm, TO-252, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 15A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 31.3W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: XP9575 Series
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.09ohm
SVHC: To Be Advised
на замовлення 128 шт:
термін постачання 21-31 дні (днів)
| XP9575GH |
|
Виробник: YAGEO XSemi
MOSFET P-CH -60V -15 A TO-252
MOSFET P-CH -60V -15 A TO-252
на замовлення 2970 шт:
термін постачання 21-30 дні (днів)