Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (73310) > Сторінка 623 з 1222
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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APX803L20-38SA-7 | Diodes Incorporated |
Description: IC SUPERVISOR 1 CHANNEL SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 143ms Minimum Voltage - Threshold: 3.8V Supplier Device Package: SOT-23-3 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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AP2171AS-13 | Diodes Incorporated |
Description: IC PWR SWITCH P-CHANNEL 1:1 8SOFeatures: Status Flag Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 95mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SO Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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AP2171AS-13 | Diodes Incorporated |
Description: IC PWR SWITCH P-CHANNEL 1:1 8SOFeatures: Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 95mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SO Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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PI7C9X3G808GPCHFCEX | Diodes Incorporated |
Description: PACKET SWITCH H-FCBGA150150-196Packaging: Tape & Reel (TR) Package / Case: 196-BBGA Mounting Type: Surface Mount Interface: I2C, JTAG, PCI Express, SMBus, SPI Voltage - Supply: 0.9V ~ 0.99V Applications: Packet Switch, 8-Port/8-Lane Supplier Device Package: 196-HFCBGA (15x15) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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PI7C9X3G808GPQ3HFCEX | Diodes Incorporated |
Description: PACKET SWITCH H-FCBGA150150-196Packaging: Tape & Reel (TR) Package / Case: 196-BBGA Mounting Type: Surface Mount Interface: PCI Express Applications: Packet Switch, 8-Port/8-Lane Supplier Device Package: 196-HFCBGA (15x15) Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
| PI7C9X3G808GPBEVB | Diodes Incorporated |
Description: PI7C9X3G808GPB EVALUATION BOARD Supplied Contents: Board(s) Utilized IC / Part: PI7C9X3G808GP Type: Interface Function: PCIe Switch Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| YD2500002 | Diodes Incorporated |
Description: XTAL OSC VCXO 25.0000MHZ CMOSPackaging: Tape & Reel (TR) Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Output: CMOS Type: VCXO Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Frequency: 25 MHz Base Resonator: Crystal |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
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74LVC2G07FX4-7 | Diodes Incorporated |
Description: IC BUFFER NON-INVERT 5.5V 6DFNPackaging: Tape & Reel (TR) Package / Case: 6-XFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: X2-DFN1409-6 |
на замовлення 70000 шт: термін постачання 21-31 дні (днів) |
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74LVC2G07FX4-7 | Diodes Incorporated |
Description: IC BUFFER NON-INVERT 5.5V 6DFNPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: X2-DFN1409-6 |
на замовлення 70000 шт: термін постачання 21-31 дні (днів) |
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SMF4L40CA-7 | Diodes Incorporated |
Description: TRANSIENT VOLTAGE SUPPRESSOR PPGrade: Automotive Power Line Protection: No Power - Peak Pulse: 400W Voltage - Clamping (Max) @ Ipp: 64.5V Voltage - Breakdown (Min): 44.4V Bidirectional Channels: 1 Supplier Device Package: DO-219AA Voltage - Reverse Standoff (Typ): 40V Current - Peak Pulse (10/1000µs): 6.2A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-219AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMTH8008LFGQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI33Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMTH8008LFGQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 61V~100V POWERDI33Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1130 шт: термін постачання 21-31 дні (днів) |
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BZX84B3V6Q-7-F | Diodes Incorporated |
Description: DIODE ZENER 3.6V 300MW SOT23Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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ZTX948 | Diodes Incorporated |
Description: TRANS PNP 20V 4.5A E-LINEPower - Max: 1.2 W Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 4.5 A Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 310mV @ 300mA, 5A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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74LVC1G86Z-7 | Diodes Incorporated |
Description: IC GATE XOR 1CH 2-INP SOT553Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-553 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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74LVC1G86Z-7 | Diodes Incorporated |
Description: IC GATE XOR 1CH 2-INP SOT553Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-553 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
на замовлення 357 шт: термін постачання 21-31 дні (днів) |
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74LVC1G86FW5-7 | Diodes Incorporated |
Description: IC GATE XOR 1CH 2-INP DFN1010-6Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: X1-DFN1010-6 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
на замовлення 260000 шт: термін постачання 21-31 дні (днів) |
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74LVC1G86FW5-7 | Diodes Incorporated |
Description: IC GATE XOR 1CH 2-INP DFN1010-6Current - Quiescent (Max): 200 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF Input Logic Level - Low: 0.7V ~ 0.8V Input Logic Level - High: 1.7V ~ 2V Supplier Device Package: X1-DFN1010-6 Number of Inputs: 2 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: XOR (Exclusive OR) Mounting Type: Surface Mount Package / Case: 6-XFDFN Packaging: Cut Tape (CT) |
на замовлення 264500 шт: термін постачання 21-31 дні (днів) |
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74AUP1G86FZ4-7 | Diodes Incorporated |
Description: IC GATE XOR 1CH 2-INP DFN1410-6Current - Quiescent (Max): 500 nA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 7.1ns @ 3.3V, 30pF Input Logic Level - Low: 0.7V ~ 0.9V Input Logic Level - High: 1.6V ~ 2V Supplier Device Package: X2-DFN1410-6 Number of Inputs: 2 Current - Output High, Low: 4mA, 4mA Voltage - Supply: 0.8V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: XOR (Exclusive OR) Mounting Type: Surface Mount Package / Case: 6-XFDFN Packaging: Tape & Reel (TR) |
на замовлення 225000 шт: термін постачання 21-31 дні (днів) |
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74AUP1G86FZ4-7 | Diodes Incorporated |
Description: IC GATE XOR 1CH 2-INP DFN1410-6Current - Quiescent (Max): 500 nA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 7.1ns @ 3.3V, 30pF Input Logic Level - Low: 0.7V ~ 0.9V Input Logic Level - High: 1.6V ~ 2V Supplier Device Package: X2-DFN1410-6 Number of Inputs: 2 Current - Output High, Low: 4mA, 4mA Voltage - Supply: 0.8V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: XOR (Exclusive OR) Mounting Type: Surface Mount Package / Case: 6-XFDFN Packaging: Cut Tape (CT) |
на замовлення 225000 шт: термін постачання 21-31 дні (днів) |
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74AHC86T14-13 | Diodes Incorporated |
Description: IC GATE XOR 4CH 2-INP 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 20 µA |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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74AHC86T14-13 | Diodes Incorporated |
Description: IC GATE XOR 4CH 2-INP 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 20 µA |
на замовлення 9709 шт: термін постачання 21-31 дні (днів) |
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SDM2M60S1F-7 | Diodes Incorporated |
Description: DIODE SCHOTTKY 60V 2A SOD123FPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123F Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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3.0SMCJ33CA-13 | Diodes Incorporated |
Description: TVS DIODE 33VWM 53.3VC SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 56.3A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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| 3.0SMCJ33CAQ-13 | Diodes Incorporated |
Description: TVS DIODE 33VWM 53.3VC SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 56.3A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 243000 шт: термін постачання 21-31 дні (днів) |
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UX73F62003 | Diodes Incorporated |
Description: XTAL OSC XO 156.2500MHZ LVDS SMDSize / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Package / Case: 6-SMD, No Lead Packaging: Tape & Reel (TR) Base Resonator: Crystal Frequency: 156.25 MHz Height - Seated (Max): 0.061" (1.55mm) Current - Supply (Max): 75mA Voltage - Supply: 3.3V Frequency Stability: ±50ppm Operating Temperature: -40°C ~ 85°C Type: XO (Standard) Function: Enable/Disable Output: LVDS Mounting Type: Surface Mount |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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UX73F62003 | Diodes Incorporated |
Description: XTAL OSC XO 156.2500MHZ LVDS SMDBase Resonator: Crystal Frequency: 156.25 MHz Height - Seated (Max): 0.061" (1.55mm) Current - Supply (Max): 75mA Voltage - Supply: 3.3V Frequency Stability: ±50ppm Operating Temperature: -40°C ~ 85°C Type: XO (Standard) Function: Enable/Disable Output: LVDS Mounting Type: Surface Mount Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Package / Case: 6-SMD, No Lead Packaging: Cut Tape (CT) |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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MMBZ5231BTS-7-F | Diodes Incorporated |
Description: DIODE ZENER ARRAY 5.1V SOT-363Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 3 Independent Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: SOT-363 Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MMBZ5231BTS-7-F | Diodes Incorporated |
Description: DIODE ZENER ARRAY 5.1V SOT-363Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 3 Independent Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: SOT-363 Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
на замовлення 3160 шт: термін постачання 21-31 дні (днів) |
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DMPH6050SSD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 5.2A 8SOMounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 P-Channel (Dual) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DMPH6050SSD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 5.2A 8SOQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 11985 шт: термін постачання 21-31 дні (днів) |
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DMPH6050SFGQ-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V PWRDI3333Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMPH6050SFGQ-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V PWRDI3333Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 4286 шт: термін постачання 21-31 дні (днів) |
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DMPH6050SSDQ-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 5.2A 8SOICQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMPH6050SSDQ-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 60V 5.2A 8SOICPackage / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount |
на замовлення 2555 шт: термін постачання 21-31 дні (днів) |
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DMPH6050SPDWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V POWERDI506Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PowerDI5060-8 (Type UX) Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 26A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 1.5W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 P-Channel Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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DMN67D7L-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 210MA SOT23-3Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±40V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 570mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V |
на замовлення 140000 шт: термін постачання 21-31 дні (днів) |
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DMN67D7L-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 210MA SOT23-3Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±40V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 570mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V |
на замовлення 140000 шт: термін постачання 21-31 дні (днів) |
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SDT12A120P5-13D | Diodes Incorporated |
Description: DIODE SCHOTTK 120V 12A POWERDI 5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 120 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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SDT12A120P5-7 | Diodes Incorporated |
Description: DIODE SCHOTTK 120V 12A POWERDI 5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 120 V |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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SDT12A120P5-7D | Diodes Incorporated |
Description: DIODE SCHOTTK 120V 12A POWERDI 5Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 120 V |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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TLC27L1ACS-13 | Diodes Incorporated |
Description: IC CMOS 1 CIRCUIT 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: 0°C ~ 70°C Current - Supply: 14µA Slew Rate: 0.04V/µs Gain Bandwidth Product: 110 kHz Current - Input Bias: 0.7 pA Voltage - Input Offset: 5 mV Supplier Device Package: 8-SO Number of Circuits: 1 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 16 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GC1630007 | Diodes Incorporated |
Description: CRYSTAL 16.3840MHZ 18PFPackaging: Tape & Reel (TR) Load Capacitance: 18pF Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±30ppm Frequency Tolerance: ±30ppm Operating Mode: Fundamental ESR (Equivalent Series Resistance): 40 Ohms Frequency: 16.384 MHz |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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GC1630008 | Diodes Incorporated |
Description: CRYSTAL 16.3840MHZ 12PFPackaging: Tape & Reel (TR) Load Capacitance: 12pF Type: MHz Crystal Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Frequency Tolerance: ±30ppm Operating Mode: Fundamental ESR (Equivalent Series Resistance): 40 Ohms Frequency: 16.384 MHz |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMC3071LVT-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 4.6A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TSOT-26 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMC3071LVT-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 4.6A TSOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TSOT-26 |
на замовлення 31 шт: термін постачання 21-31 дні (днів) |
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DMC3732UVT-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 1.1A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 540mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V Vgs(th) (Max) @ Id: 950mV @ 250µA, 1.1V @ 250µA Supplier Device Package: TSOT-26 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMP31D1UVT-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 30V 0.76A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 760mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: TSOT-26 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMN3732UVT-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 1.1A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: TSOT-26 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMN62D2UVT-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.455A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 455mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMN2046UVT-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 2.6A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 590mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: TSOT-26 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMC3730UVT-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 25V 0.68A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 190000 шт: термін постачання 21-31 дні (днів) |
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DMP2040UVT-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMN3066LVT-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V TSOT26 T&RPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V Power Dissipation (Max): 900mW Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMP2067LVT-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 4.2A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMP3045LVT-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V TSOT26 T&RInput Capacitance (Ciss) (Max) @ Vds: 749 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMN2041UVT-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 5.8A TSOT26Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMN3270UVT-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 1.6A TSOT26Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 900mV @ 40µA Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 760mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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DMN6041SVT-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V TSOT26 T&RPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V Power Dissipation (Max): 900mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DMC1028UVT-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 12V 6.1A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
| APX803L20-38SA-7 |
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Виробник: Diodes Incorporated
Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 143ms Minimum
Voltage - Threshold: 3.8V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 143ms Minimum
Voltage - Threshold: 3.8V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| AP2171AS-13 |
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Виробник: Diodes Incorporated
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 16.82 грн |
| 5000+ | 14.81 грн |
| 7500+ | 14.11 грн |
| 12500+ | 12.50 грн |
| 17500+ | 12.06 грн |
| 25000+ | 11.83 грн |
| AP2171AS-13 |
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Виробник: Diodes Incorporated
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Description: IC PWR SWITCH P-CHANNEL 1:1 8SO
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 95mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SO
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.84 грн |
| 10+ | 42.68 грн |
| 25+ | 35.37 грн |
| 100+ | 25.43 грн |
| 250+ | 21.63 грн |
| 500+ | 19.28 грн |
| 1000+ | 17.03 грн |
| PI7C9X3G808GPCHFCEX |
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Виробник: Diodes Incorporated
Description: PACKET SWITCH H-FCBGA150150-196
Packaging: Tape & Reel (TR)
Package / Case: 196-BBGA
Mounting Type: Surface Mount
Interface: I2C, JTAG, PCI Express, SMBus, SPI
Voltage - Supply: 0.9V ~ 0.99V
Applications: Packet Switch, 8-Port/8-Lane
Supplier Device Package: 196-HFCBGA (15x15)
Description: PACKET SWITCH H-FCBGA150150-196
Packaging: Tape & Reel (TR)
Package / Case: 196-BBGA
Mounting Type: Surface Mount
Interface: I2C, JTAG, PCI Express, SMBus, SPI
Voltage - Supply: 0.9V ~ 0.99V
Applications: Packet Switch, 8-Port/8-Lane
Supplier Device Package: 196-HFCBGA (15x15)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| PI7C9X3G808GPQ3HFCEX |
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Виробник: Diodes Incorporated
Description: PACKET SWITCH H-FCBGA150150-196
Packaging: Tape & Reel (TR)
Package / Case: 196-BBGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 8-Port/8-Lane
Supplier Device Package: 196-HFCBGA (15x15)
Grade: Automotive
Qualification: AEC-Q100
Description: PACKET SWITCH H-FCBGA150150-196
Packaging: Tape & Reel (TR)
Package / Case: 196-BBGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 8-Port/8-Lane
Supplier Device Package: 196-HFCBGA (15x15)
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| PI7C9X3G808GPBEVB |
Виробник: Diodes Incorporated
Description: PI7C9X3G808GPB EVALUATION BOARD
Supplied Contents: Board(s)
Utilized IC / Part: PI7C9X3G808GP
Type: Interface
Function: PCIe Switch
Packaging: Bulk
Description: PI7C9X3G808GPB EVALUATION BOARD
Supplied Contents: Board(s)
Utilized IC / Part: PI7C9X3G808GP
Type: Interface
Function: PCIe Switch
Packaging: Bulk
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В кошику
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| YD2500002 |
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Виробник: Diodes Incorporated
Description: XTAL OSC VCXO 25.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Output: CMOS
Type: VCXO
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 25 MHz
Base Resonator: Crystal
Description: XTAL OSC VCXO 25.0000MHZ CMOS
Packaging: Tape & Reel (TR)
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Output: CMOS
Type: VCXO
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Frequency: 25 MHz
Base Resonator: Crystal
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 74LVC2G07FX4-7 |
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Виробник: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1409-6
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1409-6
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 6.88 грн |
| 10000+ | 6.04 грн |
| 25000+ | 5.65 грн |
| 50000+ | 4.75 грн |
| 74LVC2G07FX4-7 |
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Виробник: Diodes Incorporated
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1409-6
Description: IC BUFFER NON-INVERT 5.5V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: X2-DFN1409-6
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.55 грн |
| 13+ | 23.73 грн |
| 25+ | 21.43 грн |
| 100+ | 13.89 грн |
| 250+ | 11.70 грн |
| 500+ | 9.50 грн |
| 1000+ | 7.19 грн |
| 2500+ | 6.47 грн |
| SMF4L40CA-7 |
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Виробник: Diodes Incorporated
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Bidirectional Channels: 1
Supplier Device Package: DO-219AA
Voltage - Reverse Standoff (Typ): 40V
Current - Peak Pulse (10/1000µs): 6.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AA
Packaging: Tape & Reel (TR)
Description: TRANSIENT VOLTAGE SUPPRESSOR PP
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Bidirectional Channels: 1
Supplier Device Package: DO-219AA
Voltage - Reverse Standoff (Typ): 40V
Current - Peak Pulse (10/1000µs): 6.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMTH8008LFGQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| DMTH8008LFGQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2254 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1130 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.41 грн |
| 10+ | 79.17 грн |
| 100+ | 53.41 грн |
| 500+ | 39.74 грн |
| 1000+ | 36.98 грн |
| BZX84B3V6Q-7-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 3.6V 300MW SOT23
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.6V 300MW SOT23
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ZTX948 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 20V 4.5A E-LINE
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 4.5 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 310mV @ 300mA, 5A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Description: TRANS PNP 20V 4.5A E-LINE
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 4.5 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 310mV @ 300mA, 5A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 4000 шт
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од. на суму грн.
| 74LVC1G86Z-7 |
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Виробник: Diodes Incorporated
Description: IC GATE XOR 1CH 2-INP SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE XOR 1CH 2-INP SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| 74LVC1G86Z-7 |
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Виробник: Diodes Incorporated
Description: IC GATE XOR 1CH 2-INP SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE XOR 1CH 2-INP SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-553
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 357 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.62 грн |
| 40+ | 7.54 грн |
| 45+ | 6.69 грн |
| 100+ | 5.32 грн |
| 250+ | 4.87 грн |
| 74LVC1G86FW5-7 |
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Виробник: Diodes Incorporated
Description: IC GATE XOR 1CH 2-INP DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X1-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE XOR 1CH 2-INP DFN1010-6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X1-DFN1010-6
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 260000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 7.40 грн |
| 10000+ | 6.94 грн |
| 15000+ | 6.84 грн |
| 25000+ | 6.32 грн |
| 35000+ | 6.26 грн |
| 50000+ | 6.21 грн |
| 74LVC1G86FW5-7 |
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Виробник: Diodes Incorporated
Description: IC GATE XOR 1CH 2-INP DFN1010-6
Current - Quiescent (Max): 200 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: X1-DFN1010-6
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Description: IC GATE XOR 1CH 2-INP DFN1010-6
Current - Quiescent (Max): 200 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 5.5ns @ 5V, 50pF
Input Logic Level - Low: 0.7V ~ 0.8V
Input Logic Level - High: 1.7V ~ 2V
Supplier Device Package: X1-DFN1010-6
Number of Inputs: 2
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
на замовлення 264500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.60 грн |
| 25+ | 12.24 грн |
| 28+ | 10.83 грн |
| 100+ | 8.72 грн |
| 250+ | 8.03 грн |
| 500+ | 7.61 грн |
| 1000+ | 7.15 грн |
| 2500+ | 7.01 грн |
| 74AUP1G86FZ4-7 |
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Виробник: Diodes Incorporated
Description: IC GATE XOR 1CH 2-INP DFN1410-6
Current - Quiescent (Max): 500 nA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.1ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.9V
Input Logic Level - High: 1.6V ~ 2V
Supplier Device Package: X2-DFN1410-6
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Description: IC GATE XOR 1CH 2-INP DFN1410-6
Current - Quiescent (Max): 500 nA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.1ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.9V
Input Logic Level - High: 1.6V ~ 2V
Supplier Device Package: X2-DFN1410-6
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
на замовлення 225000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 11.37 грн |
| 10000+ | 10.74 грн |
| 74AUP1G86FZ4-7 |
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Виробник: Diodes Incorporated
Description: IC GATE XOR 1CH 2-INP DFN1410-6
Current - Quiescent (Max): 500 nA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.1ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.9V
Input Logic Level - High: 1.6V ~ 2V
Supplier Device Package: X2-DFN1410-6
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Description: IC GATE XOR 1CH 2-INP DFN1410-6
Current - Quiescent (Max): 500 nA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.1ns @ 3.3V, 30pF
Input Logic Level - Low: 0.7V ~ 0.9V
Input Logic Level - High: 1.6V ~ 2V
Supplier Device Package: X2-DFN1410-6
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 0.8V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
на замовлення 225000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.22 грн |
| 10+ | 36.49 грн |
| 25+ | 30.50 грн |
| 100+ | 22.26 грн |
| 250+ | 19.13 грн |
| 500+ | 17.21 грн |
| 1000+ | 15.35 грн |
| 2500+ | 13.67 грн |
| 74AHC86T14-13 |
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Виробник: Diodes Incorporated
Description: IC GATE XOR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
Description: IC GATE XOR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 6.01 грн |
| 5000+ | 5.60 грн |
| 7500+ | 5.50 грн |
| 74AHC86T14-13 |
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Виробник: Diodes Incorporated
Description: IC GATE XOR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
Description: IC GATE XOR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 20 µA
на замовлення 9709 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.72 грн |
| 31+ | 9.78 грн |
| 35+ | 8.63 грн |
| 100+ | 6.91 грн |
| 250+ | 6.35 грн |
| 500+ | 6.01 грн |
| 1000+ | 5.64 грн |
| SDM2M60S1F-7 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| 3.0SMCJ33CA-13 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 33VWM 53.3VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TVS DIODE 33VWM 53.3VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.85 грн |
| 6000+ | 14.97 грн |
| 9000+ | 14.33 грн |
| 15000+ | 13.00 грн |
| 3.0SMCJ33CAQ-13 |
Виробник: Diodes Incorporated
Description: TVS DIODE 33VWM 53.3VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33VWM 53.3VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 243000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 24.87 грн |
| 6000+ | 22.20 грн |
| 9000+ | 21.32 грн |
| 15000+ | 19.07 грн |
| 21000+ | 18.51 грн |
| 30000+ | 18.18 грн |
| UX73F62003 |
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Виробник: Diodes Incorporated
Description: XTAL OSC XO 156.2500MHZ LVDS SMD
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 6-SMD, No Lead
Packaging: Tape & Reel (TR)
Base Resonator: Crystal
Frequency: 156.25 MHz
Height - Seated (Max): 0.061" (1.55mm)
Current - Supply (Max): 75mA
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVDS
Mounting Type: Surface Mount
Description: XTAL OSC XO 156.2500MHZ LVDS SMD
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 6-SMD, No Lead
Packaging: Tape & Reel (TR)
Base Resonator: Crystal
Frequency: 156.25 MHz
Height - Seated (Max): 0.061" (1.55mm)
Current - Supply (Max): 75mA
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVDS
Mounting Type: Surface Mount
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 377.03 грн |
| UX73F62003 |
![]() |
Виробник: Diodes Incorporated
Description: XTAL OSC XO 156.2500MHZ LVDS SMD
Base Resonator: Crystal
Frequency: 156.25 MHz
Height - Seated (Max): 0.061" (1.55mm)
Current - Supply (Max): 75mA
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVDS
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 6-SMD, No Lead
Packaging: Cut Tape (CT)
Description: XTAL OSC XO 156.2500MHZ LVDS SMD
Base Resonator: Crystal
Frequency: 156.25 MHz
Height - Seated (Max): 0.061" (1.55mm)
Current - Supply (Max): 75mA
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Function: Enable/Disable
Output: LVDS
Mounting Type: Surface Mount
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Package / Case: 6-SMD, No Lead
Packaging: Cut Tape (CT)
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 452.55 грн |
| 10+ | 411.46 грн |
| 50+ | 399.36 грн |
| 100+ | 357.76 грн |
| MMBZ5231BTS-7-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER ARRAY 5.1V SOT-363
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: DIODE ZENER ARRAY 5.1V SOT-363
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.02 грн |
| MMBZ5231BTS-7-F |
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Виробник: Diodes Incorporated
Description: DIODE ZENER ARRAY 5.1V SOT-363
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: DIODE ZENER ARRAY 5.1V SOT-363
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
на замовлення 3160 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.17 грн |
| 12+ | 26.19 грн |
| 100+ | 16.76 грн |
| 500+ | 11.88 грн |
| 1000+ | 10.64 грн |
| DMPH6050SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 5.2A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Description: MOSFET 2P-CH 5.2A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 22.48 грн |
| 5000+ | 20.51 грн |
| DMPH6050SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 5.2A 8SO
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 5.2A 8SO
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 11985 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.67 грн |
| 10+ | 49.40 грн |
| 100+ | 34.18 грн |
| 500+ | 26.81 грн |
| 1000+ | 22.81 грн |
| DMPH6050SFGQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V PWRDI3333
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V PWRDI3333
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 17.32 грн |
| DMPH6050SFGQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V PWRDI3333
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V PWRDI3333
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 4286 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.29 грн |
| 10+ | 43.28 грн |
| 100+ | 28.33 грн |
| 500+ | 20.55 грн |
| 1000+ | 18.60 грн |
| DMPH6050SSDQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 5.2A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 60V 5.2A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 24.82 грн |
| DMPH6050SSDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 60V 5.2A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Description: MOSFET 2P-CH 60V 5.2A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
на замовлення 2555 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.64 грн |
| 10+ | 59.25 грн |
| 100+ | 37.75 грн |
| 500+ | 27.73 грн |
| 1000+ | 25.25 грн |
| DMPH6050SPDWQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V POWERDI506
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 26A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 41V~60V POWERDI506
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 26A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMN67D7L-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 210MA SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 570mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Description: MOSFET N-CH 60V 210MA SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 570mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
на замовлення 140000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 2.44 грн |
| 30000+ | 2.31 грн |
| 50000+ | 2.07 грн |
| 100000+ | 1.73 грн |
| DMN67D7L-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 210MA SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 570mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Description: MOSFET N-CH 60V 210MA SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±40V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 570mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
на замовлення 140000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.60 грн |
| 24+ | 12.46 грн |
| 100+ | 6.09 грн |
| 500+ | 4.76 грн |
| 1000+ | 3.31 грн |
| 2000+ | 2.87 грн |
| 5000+ | 2.62 грн |
| SDT12A120P5-13D |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTK 120V 12A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Description: DIODE SCHOTTK 120V 12A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SDT12A120P5-7 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTK 120V 12A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Description: DIODE SCHOTTK 120V 12A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| SDT12A120P5-7D |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTK 120V 12A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Description: DIODE SCHOTTK 120V 12A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLC27L1ACS-13 |
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Виробник: Diodes Incorporated
Description: IC CMOS 1 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 14µA
Slew Rate: 0.04V/µs
Gain Bandwidth Product: 110 kHz
Current - Input Bias: 0.7 pA
Voltage - Input Offset: 5 mV
Supplier Device Package: 8-SO
Number of Circuits: 1
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
Description: IC CMOS 1 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: 0°C ~ 70°C
Current - Supply: 14µA
Slew Rate: 0.04V/µs
Gain Bandwidth Product: 110 kHz
Current - Input Bias: 0.7 pA
Voltage - Input Offset: 5 mV
Supplier Device Package: 8-SO
Number of Circuits: 1
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
товару немає в наявності
В кошику
од. на суму грн.
| GC1630007 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 16.3840MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 16.384 MHz
Description: CRYSTAL 16.3840MHZ 18PF
Packaging: Tape & Reel (TR)
Load Capacitance: 18pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±30ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 16.384 MHz
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| GC1630008 |
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Виробник: Diodes Incorporated
Description: CRYSTAL 16.3840MHZ 12PF
Packaging: Tape & Reel (TR)
Load Capacitance: 12pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 16.384 MHz
Description: CRYSTAL 16.3840MHZ 12PF
Packaging: Tape & Reel (TR)
Load Capacitance: 12pF
Type: MHz Crystal
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Frequency Tolerance: ±30ppm
Operating Mode: Fundamental
ESR (Equivalent Series Resistance): 40 Ohms
Frequency: 16.384 MHz
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| DMC3071LVT-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMC3071LVT-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.97 грн |
| 14+ | 22.68 грн |
| DMC3732UVT-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 1.1A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 540mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V
Vgs(th) (Max) @ Id: 950mV @ 250µA, 1.1V @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET N/P-CH 30V 1.1A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 540mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V
Vgs(th) (Max) @ Id: 950mV @ 250µA, 1.1V @ 250µA
Supplier Device Package: TSOT-26
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMP31D1UVT-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 30V 0.76A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET 2P-CH 30V 0.76A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TSOT-26
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN3732UVT-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 1.1A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET 2N-CH 30V 1.1A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: TSOT-26
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN62D2UVT-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.455A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET 2N-CH 60V 0.455A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN2046UVT-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 590mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET 2N-CH 20V 2.6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 590mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: TSOT-26
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMC3730UVT-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 25V 0.68A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 25V 0.68A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
на замовлення 190000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 6.03 грн |
| 20000+ | 5.35 грн |
| 30000+ | 5.11 грн |
| 50000+ | 4.55 грн |
| 70000+ | 4.52 грн |
| DMP2040UVT-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
Description: MOSFET P-CH 20V TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN3066LVT-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 10 V
Description: MOSFET BVDSS: 25V~30V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMP2067LVT-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 4.2A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Description: MOSFET P-CH 20V 4.2A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMP3045LVT-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V TSOT26 T&R
Input Capacitance (Ciss) (Max) @ Vds: 749 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 25V~30V TSOT26 T&R
Input Capacitance (Ciss) (Max) @ Vds: 749 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN2041UVT-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.8A TSOT26
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 5.8A TSOT26
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN3270UVT-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 1.6A TSOT26
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 900mV @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V
Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 760mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 1.6A TSOT26
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 900mV @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 3.07nC @ 4.5V
Rds On (Max) @ Id, Vgs: 270mOhm @ 650mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 161pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 760mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| DMN6041SVT-13 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Description: MOSFET BVDSS: 41V~60V TSOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 8.21 грн |
| DMC1028UVT-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 12V 6.1A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET N/P-CH 12V 6.1A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.

















