Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72155) > Сторінка 621 з 1203
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PI5C3384QEX | Diodes Incorporated |
Description: IC BUS SWITCH 5 X 1:1 24QSOPPackaging: Cut Tape (CT) Package / Case: 24-SSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 5 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.75V ~ 5.25V Independent Circuits: 2 Voltage Supply Source: Single Supply Supplier Device Package: 24-QSOP |
товару немає в наявності |
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AP7365-30SNG-7 | Diodes Incorporated |
Description: IC REG LIN 3V 600MA U-DFN2020-6Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 600mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: U-DFN2020-6 Voltage - Output (Min/Fixed): 3V Control Features: Enable PSRR: 65dB (1kHz) Voltage Dropout (Max): 0.4V @ 600mA Protection Features: Over Current, Over Temperature |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AP7365-30SNG-7 | Diodes Incorporated |
Description: IC REG LIN 3V 600MA U-DFN2020-6Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 600mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: U-DFN2020-6 Voltage - Output (Min/Fixed): 3V Control Features: Enable PSRR: 65dB (1kHz) Voltage Dropout (Max): 0.4V @ 600mA Protection Features: Over Current, Over Temperature |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AP7365-10EG-13 | Diodes Incorporated |
Description: IC REG LINEAR 1V 600MA SOT-223-3Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 600mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 1V PSRR: 65dB (1kHz) Voltage Dropout (Max): 0.6V @ 600mA Protection Features: Over Current, Over Temperature |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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AP7365-10EG-13 | Diodes Incorporated |
Description: IC REG LINEAR 1V 600MA SOT-223-3Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 600mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-223-3 Voltage - Output (Min/Fixed): 1V PSRR: 65dB (1kHz) Voltage Dropout (Max): 0.6V @ 600mA Protection Features: Over Current, Over Temperature |
на замовлення 16815 шт: термін постачання 21-31 дні (днів) |
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ZHB6792TA | Diodes Incorporated |
Description: TRANS 2NPN/2PNP 70V 1A SM8Packaging: Tape & Reel (TR) Package / Case: SOT-223-8 Mounting Type: Surface Mount Transistor Type: 2 NPN, 2 PNP (H-Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.25W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 70V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SM8 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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ZHB6792TA | Diodes Incorporated |
Description: TRANS 2NPN/2PNP 70V 1A SM8Packaging: Cut Tape (CT) Package / Case: SOT-223-8 Mounting Type: Surface Mount Transistor Type: 2 NPN, 2 PNP (H-Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.25W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 70V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SM8 |
на замовлення 12628 шт: термін постачання 21-31 дні (днів) |
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DMT32M5LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 150A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V |
на замовлення 70000 шт: термін постачання 21-31 дні (днів) |
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DMT32M5LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 150A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V |
на замовлення 71806 шт: термін постачання 21-31 дні (днів) |
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DMT32M5LFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 30A POWERDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 831000 шт: термін постачання 21-31 дні (днів) |
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DMT32M5LFG-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 30A POWERDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 833856 шт: термін постачання 21-31 дні (днів) |
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DMT32M5LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 30A POWERDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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DMT32M5LFG-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 30A POWERDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 29928 шт: термін постачання 21-31 дні (днів) |
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DMT32M4LFG-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V POWERDI333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 1.1W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V |
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DMT32M4LFG-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V POWERDI333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 1.1W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PI3EQX5801ZDEX | Diodes Incorporated |
Description: IC REDRIVER USB 3.0 1CH 20TQFNPackaging: Tape & Reel (TR) Package / Case: 20-WFQFN Exposed Pad Delay Time: 1.0ns Number of Channels: 1 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.5V, 3.3V Applications: USB 3.0 Data Rate (Max): 5Gbps Supplier Device Package: 20-TQFN (4x4) Signal Conditioning: Input Equalization, Output De-Emphasis |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PI3EQX5801ZDEX | Diodes Incorporated |
Description: IC REDRIVER USB 3.0 1CH 20TQFNPackaging: Cut Tape (CT) Package / Case: 20-WFQFN Exposed Pad Delay Time: 1.0ns Number of Channels: 1 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.5V, 3.3V Applications: USB 3.0 Data Rate (Max): 5Gbps Supplier Device Package: 20-TQFN (4x4) Signal Conditioning: Input Equalization, Output De-Emphasis |
на замовлення 341 шт: термін постачання 21-31 дні (днів) |
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ZVN3310ASTZ | Diodes Incorporated |
Description: MOSFET N-CH 100V 200MA E-LINEPackaging: Tape & Box (TB) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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| GBU25JL_HF | Diodes Incorporated |
Description: MEDIUM/HIGH POWER BRIDGE GBU TUBPackaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AH1887-ZG-7 | Diodes Incorporated |
Description: MAGNETIC SWITCH OMNIPOLAR SOT553Packaging: Tape & Reel (TR) Package / Case: SOT-553 Output Type: Push-Pull Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.3V Technology: Hall Effect Sensing Range: ±5mT Trip, ±0.6mT Release Current - Supply (Max): 12µA Supplier Device Package: SOT-553 Test Condition: 25°C |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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AH1887-ZG-7 | Diodes Incorporated |
Description: MAGNETIC SWITCH OMNIPOLAR SOT553Packaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Push-Pull Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.3V Technology: Hall Effect Sensing Range: ±5mT Trip, ±0.6mT Release Current - Supply (Max): 12µA Supplier Device Package: SOT-553 Test Condition: 25°C |
на замовлення 53776 шт: термін постачання 21-31 дні (днів) |
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AP9101CAK6-BBTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-26 Fault Protection: Over Current, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP9101CAK6-BDTRG1 | Diodes Incorporated |
Description: IC BATT PROT LI-ION 1CELL SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Number of Cells: 1 Mounting Type: Surface Mount Function: Battery Protection Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: SOT-26 Fault Protection: Over Current, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC2G32RA3-7 | Diodes Incorporated |
Description: IC GATE OR 2CH 2-INP DFN1210-8Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: X2-DFN1210-8 Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 40 µA |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
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74LVC2G32RA3-7 | Diodes Incorporated |
Description: IC GATE OR 2CH 2-INP DFN1210-8Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: X2-DFN1210-8 Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 40 µA |
на замовлення 39056 шт: термін постачання 21-31 дні (днів) |
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AH277AZ4-BG1 | Diodes Incorporated |
Description: MAGNETIC SWITCH LATCH TO94Features: Temperature Compensated Packaging: Bulk Package / Case: 4-SSIP Output Type: Open Collector Polarization: South Pole Mounting Type: Through Hole Function: Latch Operating Temperature: -20°C ~ 85°C (TA) Voltage - Supply: 3.5V ~ 16V Technology: Hall Effect Sensing Range: 7mT Trip, -7mT Release Current - Output (Max): 400mA Current - Supply (Max): 16mA Supplier Device Package: TO-94 Test Condition: 25°C |
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В кошику од. на суму грн. | ||||||||||||||||
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AH277AZ4-AG1 | Diodes Incorporated |
Description: MAGNETIC SWITCH LATCH TO94Features: Temperature Compensated Packaging: Bulk Package / Case: 4-SSIP Output Type: Open Collector Polarization: South Pole Mounting Type: Through Hole Function: Latch Operating Temperature: -20°C ~ 85°C (TA) Voltage - Supply: 3.5V ~ 16V Technology: Hall Effect Sensing Range: 5mT Trip, -5mT Release Current - Output (Max): 400mA Current - Supply (Max): 16mA Supplier Device Package: TO-94 Test Condition: 25°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN32D0LV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.68A SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 480mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-563 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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DMN32D0LV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.68A SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 480mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-563 |
на замовлення 15946 шт: термін постачання 21-31 дні (днів) |
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MBR2150VG-E1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 150V 2A DO15Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBR2150VG-G1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 150V 2A DO15Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBR2150VGTR-G1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 150V 2A DO15Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBR2150VRTR-E1 | Diodes Incorporated |
Description: DIODE SCHOTTKY 150V 2A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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B340LB-13-F-2477 | Diodes Incorporated |
Description: DIODE Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 250pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN31D5UDA-7B | Diodes Incorporated |
Description: MOSFET 2N-CH 0.4A 6DFNPackaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN31D5UDA-7B | Diodes Incorporated |
Description: MOSFET 2N-CH 0.4A 6DFNPackaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-6 |
на замовлення 7036 шт: термін постачання 21-31 дні (днів) |
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74AUP1G32FS3-7 | Diodes Incorporated |
Description: IC GATE OR 1CH 2-INP DFN0808-4Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: X2-DFN0808-4 Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 500 nA |
на замовлення 70000 шт: термін постачання 21-31 дні (днів) |
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74AUP1G32FS3-7 | Diodes Incorporated |
Description: IC GATE OR 1CH 2-INP DFN0808-4Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: X2-DFN0808-4 Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 500 nA |
на замовлення 70000 шт: термін постачання 21-31 дні (днів) |
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74AUP1G02FS3-7 | Diodes Incorporated |
Description: IC GATE NOR 1CH 2-INP DFN0808-4Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: X2-DFN0808-4 Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 500 nA |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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74AUP1G02FS3-7 | Diodes Incorporated |
Description: IC GATE NOR 1CH 2-INP DFN0808-4Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: X2-DFN0808-4 Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 500 nA |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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74AUP1G06FS3-7 | Diodes Incorporated |
Description: IC INVERTER 1CH 1-INP DFN0808-4Features: Open Drain Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: -, 4mA Number of Inputs: 1 Supplier Device Package: X2-DFN0808-4 Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 500 nA |
на замовлення 515000 шт: термін постачання 21-31 дні (днів) |
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74AUP1G06FS3-7 | Diodes Incorporated |
Description: IC INVERTER 1CH 1-INP DFN0808-4Features: Open Drain Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: -, 4mA Number of Inputs: 1 Supplier Device Package: X2-DFN0808-4 Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 500 nA |
на замовлення 515000 шт: термін постачання 21-31 дні (днів) |
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74AUP1G09FS3-7 | Diodes Incorporated |
Description: IC GATE AND 1CH 2-INP DFN0808-4Features: Open Drain Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: -, 4mA Number of Inputs: 2 Supplier Device Package: X2-DFN0808-4 Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 500 nA |
на замовлення 480000 шт: термін постачання 21-31 дні (днів) |
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74AUP1G09FS3-7 | Diodes Incorporated |
Description: IC GATE AND 1CH 2-INP DFN0808-4Features: Open Drain Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: -, 4mA Number of Inputs: 2 Supplier Device Package: X2-DFN0808-4 Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 500 nA |
на замовлення 484260 шт: термін постачання 21-31 дні (днів) |
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BC847BFAQ-7B | Diodes Incorporated |
Description: TRANS NPN 45V 0.1A X2-DFN0806-3Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: X2-DFN0806-3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 435 mW Qualification: AEC-Q101 |
на замовлення 230000 шт: термін постачання 21-31 дні (днів) |
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BC847BFAQ-7B | Diodes Incorporated |
Description: TRANS NPN 45V 0.1A X2-DFN0806-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: X2-DFN0806-3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 435 mW Qualification: AEC-Q101 |
на замовлення 239990 шт: термін постачання 21-31 дні (днів) |
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DMC31D5UDA-7B | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 0.4A 6DFNPackaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 370mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-6 |
на замовлення 4070000 шт: термін постачання 21-31 дні (днів) |
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DMC31D5UDA-7B | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 0.4A 6DFNPackaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 370mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-6 |
на замовлення 4075830 шт: термін постачання 21-31 дні (днів) |
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DMP22D5UFA-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X2-DFN0806-Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 16 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN2991UFA-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X2-DFN0806-Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 520mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 14.6 pF @ 16 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP32D9UFA-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V X2-DFN0806Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMN31D5UFA-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V X2-DFN0806Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP32D9UDAQ-7B | Diodes Incorporated |
Description: MOSFET 2P-CH 30V 0.22A 6DFNPackaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 360mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 15V Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 350nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 240000 шт: термін постачання 21-31 дні (днів) |
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DMC31D5UDAQ-7B | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 0.4A 6DFNPackaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 370mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 220mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V, 21.8pF @ 15V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V, 0.35nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-6 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC3G07V8-7 | Diodes Incorporated |
Description: IC INVERTER 3CH 3-INP 8VSSOPPackaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 3 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: 8-VSSOP |
на замовлення 594000 шт: термін постачання 21-31 дні (днів) |
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74LVC3G07V8-7 | Diodes Incorporated |
Description: IC INVERTER 3CH 3-INP 8VSSOPPackaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 3 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: 8-VSSOP |
на замовлення 596290 шт: термін постачання 21-31 дні (днів) |
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DMS2220LFDB-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 3.5A 6-DFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V |
на замовлення 87000 шт: термін постачання 21-31 дні (днів) |
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DMS2220LFDB-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 3.5A 6-DFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V |
на замовлення 89997 шт: термін постачання 21-31 дні (днів) |
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DMS2220LFDB-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 3.5A 6-DFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V |
на замовлення 89297 шт: термін постачання 21-31 дні (днів) |
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| 49SNC200-18-E | Diodes Incorporated |
Description: CRYSTAL METAL CAN SMD Packaging: Bulk Package / Case: HC-49/US Load Capacitance: 18pF Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm) Mounting Type: Surface Mount Type: MHz Crystal Operating Temperature: -20°C ~ 70°C Frequency Stability: ±100ppm Frequency Tolerance: ±50ppm Operating Mode: Fundamental Height - Seated (Max): 0.205" (5.20mm) ESR (Equivalent Series Resistance): 200 Ohms Frequency: 20 MHz |
товару немає в наявності |
В кошику од. на суму грн. |
| PI5C3384QEX |
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Виробник: Diodes Incorporated
Description: IC BUS SWITCH 5 X 1:1 24QSOP
Packaging: Cut Tape (CT)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 24-QSOP
Description: IC BUS SWITCH 5 X 1:1 24QSOP
Packaging: Cut Tape (CT)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 24-QSOP
товару немає в наявності
В кошику
од. на суму грн.
| AP7365-30SNG-7 |
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Виробник: Diodes Incorporated
Description: IC REG LIN 3V 600MA U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.4V @ 600mA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 3V 600MA U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.4V @ 600mA
Protection Features: Over Current, Over Temperature
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.24 грн |
| AP7365-30SNG-7 |
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Виробник: Diodes Incorporated
Description: IC REG LIN 3V 600MA U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.4V @ 600mA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 3V 600MA U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: U-DFN2020-6
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.4V @ 600mA
Protection Features: Over Current, Over Temperature
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.14 грн |
| 19+ | 16.12 грн |
| 25+ | 14.37 грн |
| 100+ | 11.63 грн |
| 250+ | 10.75 грн |
| 500+ | 10.23 грн |
| 1000+ | 9.63 грн |
| AP7365-10EG-13 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 1V 600MA SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1V
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 600mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1V 600MA SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1V
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 600mA
Protection Features: Over Current, Over Temperature
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 10.32 грн |
| 5000+ | 9.65 грн |
| 7500+ | 9.50 грн |
| 12500+ | 8.76 грн |
| AP7365-10EG-13 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 1V 600MA SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1V
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 600mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1V 600MA SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 1V
PSRR: 65dB (1kHz)
Voltage Dropout (Max): 0.6V @ 600mA
Protection Features: Over Current, Over Temperature
на замовлення 16815 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.14 грн |
| 19+ | 16.12 грн |
| 25+ | 14.37 грн |
| 100+ | 11.63 грн |
| 250+ | 10.75 грн |
| 500+ | 10.23 грн |
| 1000+ | 9.63 грн |
| ZHB6792TA |
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Виробник: Diodes Incorporated
Description: TRANS 2NPN/2PNP 70V 1A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SM8
Description: TRANS 2NPN/2PNP 70V 1A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SM8
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 78.91 грн |
| 2000+ | 70.90 грн |
| 3000+ | 70.88 грн |
| ZHB6792TA |
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Виробник: Diodes Incorporated
Description: TRANS 2NPN/2PNP 70V 1A SM8
Packaging: Cut Tape (CT)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SM8
Description: TRANS 2NPN/2PNP 70V 1A SM8
Packaging: Cut Tape (CT)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SM8
на замовлення 12628 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 230.53 грн |
| 10+ | 144.97 грн |
| 100+ | 100.89 грн |
| 500+ | 76.99 грн |
| DMT32M5LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 150A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Description: MOSFET N-CH 30V 150A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 21.38 грн |
| 5000+ | 19.28 грн |
| 7500+ | 18.93 грн |
| 12500+ | 17.54 грн |
| DMT32M5LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 150A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Description: MOSFET N-CH 30V 150A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
на замовлення 71806 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 67.76 грн |
| 10+ | 45.60 грн |
| 100+ | 31.68 грн |
| 500+ | 25.51 грн |
| 1000+ | 23.18 грн |
| DMT32M5LFG-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
на замовлення 831000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 33.31 грн |
| 6000+ | 30.55 грн |
| 9000+ | 29.14 грн |
| DMT32M5LFG-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
на замовлення 833856 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 80.22 грн |
| 10+ | 63.45 грн |
| 100+ | 49.35 грн |
| 500+ | 39.26 грн |
| 1000+ | 31.98 грн |
| DMT32M5LFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 33.31 грн |
| 6000+ | 30.55 грн |
| 10000+ | 29.14 грн |
| DMT32M5LFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 30A POWERDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4066 pF @ 15 V
Qualification: AEC-Q101
на замовлення 29928 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 80.22 грн |
| 10+ | 63.45 грн |
| 100+ | 49.35 грн |
| 500+ | 39.26 грн |
| 1000+ | 31.98 грн |
| DMT32M4LFG-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| DMT32M4LFG-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 1.1W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V
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| PI3EQX5801ZDEX |
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Виробник: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 20TQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Delay Time: 1.0ns
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.5V, 3.3V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 20-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
Description: IC REDRIVER USB 3.0 1CH 20TQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-WFQFN Exposed Pad
Delay Time: 1.0ns
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.5V, 3.3V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 20-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
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| PI3EQX5801ZDEX |
![]() |
Виробник: Diodes Incorporated
Description: IC REDRIVER USB 3.0 1CH 20TQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Delay Time: 1.0ns
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.5V, 3.3V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 20-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
Description: IC REDRIVER USB 3.0 1CH 20TQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Delay Time: 1.0ns
Number of Channels: 1
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.5V, 3.3V
Applications: USB 3.0
Data Rate (Max): 5Gbps
Supplier Device Package: 20-TQFN (4x4)
Signal Conditioning: Input Equalization, Output De-Emphasis
на замовлення 341 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 371.49 грн |
| 10+ | 273.06 грн |
| 25+ | 252.02 грн |
| 100+ | 214.77 грн |
| 250+ | 205.92 грн |
| ZVN3310ASTZ |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 200MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Description: MOSFET N-CH 100V 200MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 25.18 грн |
| 4000+ | 22.37 грн |
| 6000+ | 21.41 грн |
| 10000+ | 19.09 грн |
| 14000+ | 18.49 грн |
| 20000+ | 17.91 грн |
| GBU25JL_HF |
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Виробник: Diodes Incorporated
Description: MEDIUM/HIGH POWER BRIDGE GBU TUB
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: MEDIUM/HIGH POWER BRIDGE GBU TUB
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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| AH1887-ZG-7 |
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Виробник: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.3V
Technology: Hall Effect
Sensing Range: ±5mT Trip, ±0.6mT Release
Current - Supply (Max): 12µA
Supplier Device Package: SOT-553
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.3V
Technology: Hall Effect
Sensing Range: ±5mT Trip, ±0.6mT Release
Current - Supply (Max): 12µA
Supplier Device Package: SOT-553
Test Condition: 25°C
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 31.22 грн |
| 6000+ | 29.36 грн |
| 9000+ | 29.00 грн |
| 15000+ | 26.85 грн |
| 21000+ | 26.64 грн |
| AH1887-ZG-7 |
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Виробник: Diodes Incorporated
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.3V
Technology: Hall Effect
Sensing Range: ±5mT Trip, ±0.6mT Release
Current - Supply (Max): 12µA
Supplier Device Package: SOT-553
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.3V
Technology: Hall Effect
Sensing Range: ±5mT Trip, ±0.6mT Release
Current - Supply (Max): 12µA
Supplier Device Package: SOT-553
Test Condition: 25°C
на замовлення 53776 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.20 грн |
| 10+ | 45.82 грн |
| 25+ | 41.37 грн |
| 100+ | 34.20 грн |
| 250+ | 31.99 грн |
| 500+ | 30.69 грн |
| AP9101CAK6-BBTRG1 |
Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
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| AP9101CAK6-BDTRG1 |
Виробник: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
Description: IC BATT PROT LI-ION 1CELL SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Number of Cells: 1
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: SOT-26
Fault Protection: Over Current, Over Voltage
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| 74LVC2G32RA3-7 |
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Виробник: Diodes Incorporated
Description: IC GATE OR 2CH 2-INP DFN1210-8
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1210-8
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
Description: IC GATE OR 2CH 2-INP DFN1210-8
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1210-8
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 3.37 грн |
| 10000+ | 3.15 грн |
| 15000+ | 3.10 грн |
| 25000+ | 2.86 грн |
| 35000+ | 2.83 грн |
| 74LVC2G32RA3-7 |
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Виробник: Diodes Incorporated
Description: IC GATE OR 2CH 2-INP DFN1210-8
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1210-8
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
Description: IC GATE OR 2CH 2-INP DFN1210-8
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: X2-DFN1210-8
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 40 µA
на замовлення 39056 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.35 грн |
| 52+ | 5.85 грн |
| 59+ | 5.16 грн |
| 100+ | 4.10 грн |
| 250+ | 3.74 грн |
| 500+ | 3.53 грн |
| 1000+ | 3.29 грн |
| 2500+ | 3.11 грн |
| AH277AZ4-BG1 |
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Виробник: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 7mT Trip, -7mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 16mA
Supplier Device Package: TO-94
Test Condition: 25°C
Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 7mT Trip, -7mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 16mA
Supplier Device Package: TO-94
Test Condition: 25°C
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| AH277AZ4-AG1 |
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Виробник: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 5mT Trip, -5mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 16mA
Supplier Device Package: TO-94
Test Condition: 25°C
Description: MAGNETIC SWITCH LATCH TO94
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 4-SSIP
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3.5V ~ 16V
Technology: Hall Effect
Sensing Range: 5mT Trip, -5mT Release
Current - Output (Max): 400mA
Current - Supply (Max): 16mA
Supplier Device Package: TO-94
Test Condition: 25°C
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| DMN32D0LV-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.22 грн |
| 6000+ | 2.81 грн |
| 9000+ | 2.66 грн |
| 15000+ | 2.34 грн |
| DMN32D0LV-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
на замовлення 15946 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.68 грн |
| 38+ | 8.02 грн |
| 100+ | 5.38 грн |
| 500+ | 3.85 грн |
| 1000+ | 3.44 грн |
| MBR2150VG-E1 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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| MBR2150VG-G1 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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| MBR2150VGTR-G1 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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| MBR2150VRTR-E1 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 150V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Description: DIODE SCHOTTKY 150V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товару немає в наявності
В кошику
од. на суму грн.
| B340LB-13-F-2477 |
Виробник: Diodes Incorporated
Description: DIODE
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: DIODE
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| DMN31D5UDA-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 0.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Description: MOSFET 2N-CH 0.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
товару немає в наявності
В кошику
од. на суму грн.
| DMN31D5UDA-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 0.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Description: MOSFET 2N-CH 0.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
на замовлення 7036 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.13 грн |
| 27+ | 11.17 грн |
| 100+ | 5.46 грн |
| 500+ | 4.27 грн |
| 1000+ | 2.97 грн |
| 2000+ | 2.57 грн |
| 5000+ | 2.35 грн |
| 74AUP1G32FS3-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE OR 1CH 2-INP DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Description: IC GATE OR 1CH 2-INP DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 7.09 грн |
| 10000+ | 6.39 грн |
| 25000+ | 5.86 грн |
| 50000+ | 5.29 грн |
| 74AUP1G32FS3-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE OR 1CH 2-INP DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Description: IC GATE OR 1CH 2-INP DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
на замовлення 70000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.48 грн |
| 15+ | 20.70 грн |
| 25+ | 18.96 грн |
| 100+ | 13.23 грн |
| 250+ | 11.99 грн |
| 500+ | 9.93 грн |
| 1000+ | 7.32 грн |
| 2500+ | 6.71 грн |
| 74AUP1G02FS3-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE NOR 1CH 2-INP DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Description: IC GATE NOR 1CH 2-INP DFN0808-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 7.09 грн |
| 10000+ | 6.39 грн |
| 74AUP1G02FS3-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE NOR 1CH 2-INP DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Description: IC GATE NOR 1CH 2-INP DFN0808-4
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.48 грн |
| 15+ | 20.70 грн |
| 25+ | 18.96 грн |
| 100+ | 13.23 грн |
| 250+ | 11.99 грн |
| 500+ | 9.93 грн |
| 1000+ | 7.32 грн |
| 2500+ | 6.71 грн |
| 74AUP1G06FS3-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC INVERTER 1CH 1-INP DFN0808-4
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Description: IC INVERTER 1CH 1-INP DFN0808-4
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
на замовлення 515000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 8.01 грн |
| 10000+ | 7.02 грн |
| 15000+ | 6.66 грн |
| 25000+ | 5.88 грн |
| 35000+ | 5.66 грн |
| 50000+ | 5.45 грн |
| 125000+ | 5.22 грн |
| 74AUP1G06FS3-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC INVERTER 1CH 1-INP DFN0808-4
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Description: IC INVERTER 1CH 1-INP DFN0808-4
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 1
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 10.5ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
на замовлення 515000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.83 грн |
| 13+ | 24.37 грн |
| 25+ | 19.98 грн |
| 100+ | 14.13 грн |
| 250+ | 11.86 грн |
| 500+ | 10.46 грн |
| 1000+ | 9.13 грн |
| 2500+ | 7.89 грн |
| 74AUP1G09FS3-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN0808-4
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Description: IC GATE AND 1CH 2-INP DFN0808-4
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
на замовлення 480000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 6.08 грн |
| 10000+ | 5.70 грн |
| 15000+ | 5.62 грн |
| 25000+ | 5.19 грн |
| 35000+ | 5.14 грн |
| 50000+ | 5.09 грн |
| 74AUP1G09FS3-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC GATE AND 1CH 2-INP DFN0808-4
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Description: IC GATE AND 1CH 2-INP DFN0808-4
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: X2-DFN0808-4
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
на замовлення 484260 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.58 грн |
| 30+ | 10.20 грн |
| 34+ | 9.00 грн |
| 100+ | 7.21 грн |
| 250+ | 6.63 грн |
| 500+ | 6.28 грн |
| 1000+ | 5.89 грн |
| 2500+ | 5.72 грн |
| BC847BFAQ-7B |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 45V 0.1A X2-DFN0806-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN0806-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 435 mW
Qualification: AEC-Q101
Description: TRANS NPN 45V 0.1A X2-DFN0806-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN0806-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 435 mW
Qualification: AEC-Q101
на замовлення 230000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 4.41 грн |
| 20000+ | 3.89 грн |
| 30000+ | 3.70 грн |
| 50000+ | 3.28 грн |
| 70000+ | 3.17 грн |
| 100000+ | 3.05 грн |
| BC847BFAQ-7B |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 45V 0.1A X2-DFN0806-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN0806-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 435 mW
Qualification: AEC-Q101
Description: TRANS NPN 45V 0.1A X2-DFN0806-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: X2-DFN0806-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 435 mW
Qualification: AEC-Q101
на замовлення 239990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.92 грн |
| 21+ | 14.55 грн |
| 100+ | 9.13 грн |
| 500+ | 6.36 грн |
| 1000+ | 5.65 грн |
| 2000+ | 5.04 грн |
| 5000+ | 4.32 грн |
| DMC31D5UDA-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
на замовлення 4070000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 5.58 грн |
| 30000+ | 5.30 грн |
| 50000+ | 4.51 грн |
| 100000+ | 4.16 грн |
| DMC31D5UDA-7B |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
на замовлення 4075830 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.82 грн |
| 16+ | 19.95 грн |
| 100+ | 10.05 грн |
| 500+ | 8.36 грн |
| 1000+ | 6.51 грн |
| 2000+ | 5.82 грн |
| 5000+ | 5.60 грн |
| DMP22D5UFA-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN0806-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 16 V
Description: MOSFET BVDSS: 8V~24V X2-DFN0806-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 16 V
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| DMN2991UFA-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN0806-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14.6 pF @ 16 V
Description: MOSFET BVDSS: 8V~24V X2-DFN0806-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14.6 pF @ 16 V
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| DMP32D9UFA-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0806
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V X2-DFN0806
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
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| DMN31D5UFA-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN0806
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
Description: MOSFET BVDSS: 25V~30V X2-DFN0806
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15.4 pF @ 15 V
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| DMP32D9UDAQ-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 30V 0.22A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 360mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 15V
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2P-CH 30V 0.22A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 360mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 15V
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 240000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.86 грн |
| DMC31D5UDAQ-7B |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V, 21.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V, 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 0.4A 6DFN
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), 220mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V, 21.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V, 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-6
Grade: Automotive
Qualification: AEC-Q101
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| 74LVC3G07V8-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC INVERTER 3CH 3-INP 8VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 8-VSSOP
Description: IC INVERTER 3CH 3-INP 8VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 8-VSSOP
на замовлення 594000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.43 грн |
| 6000+ | 7.88 грн |
| 9000+ | 7.76 грн |
| 15000+ | 7.15 грн |
| 21000+ | 7.08 грн |
| 30000+ | 7.01 грн |
| 75000+ | 6.75 грн |
| 74LVC3G07V8-7 |
![]() |
Виробник: Diodes Incorporated
Description: IC INVERTER 3CH 3-INP 8VSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 8-VSSOP
Description: IC INVERTER 3CH 3-INP 8VSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 8-VSSOP
на замовлення 596290 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.25 грн |
| 23+ | 13.50 грн |
| 26+ | 11.97 грн |
| 100+ | 9.66 грн |
| 250+ | 8.91 грн |
| 500+ | 8.46 грн |
| 1000+ | 7.95 грн |
| DMS2220LFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
на замовлення 87000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.31 грн |
| 6000+ | 10.06 грн |
| 9000+ | 9.64 грн |
| 15000+ | 8.79 грн |
| DMS2220LFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
на замовлення 89997 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.72 грн |
| 12+ | 25.87 грн |
| 100+ | 17.56 грн |
| 500+ | 12.92 грн |
| 1000+ | 11.74 грн |
| DMS2220LFDB-7 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
Description: MOSFET P-CH 20V 3.5A 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
на замовлення 89297 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.72 грн |
| 12+ | 25.72 грн |
| 100+ | 17.43 грн |
| 500+ | 12.81 грн |
| 1000+ | 11.63 грн |
| 49SNC200-18-E |
Виробник: Diodes Incorporated
Description: CRYSTAL METAL CAN SMD
Packaging: Bulk
Package / Case: HC-49/US
Load Capacitance: 18pF
Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±100ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.205" (5.20mm)
ESR (Equivalent Series Resistance): 200 Ohms
Frequency: 20 MHz
Description: CRYSTAL METAL CAN SMD
Packaging: Bulk
Package / Case: HC-49/US
Load Capacitance: 18pF
Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
Mounting Type: Surface Mount
Type: MHz Crystal
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±100ppm
Frequency Tolerance: ±50ppm
Operating Mode: Fundamental
Height - Seated (Max): 0.205" (5.20mm)
ESR (Equivalent Series Resistance): 200 Ohms
Frequency: 20 MHz
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