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G8327A039 G8327A039 Diodes Incorporated G8.pdf Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 2-SMD (3.2x1.5)
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 50 kOhms
Frequency: 32.768 kHz
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
10+32.94 грн
11+27.80 грн
25+26.32 грн
50+23.68 грн
100+22.69 грн
250+21.46 грн
500+20.24 грн
1000+19.40 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
G8327A047 G8327A047 Diodes Incorporated G8.pdf Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 9pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 2-SMD (3.2x1.5)
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
на замовлення 17977 шт:
термін постачання 21-31 дні (днів)
10+32.94 грн
11+27.80 грн
25+26.32 грн
50+23.68 грн
100+22.69 грн
250+21.46 грн
500+20.24 грн
1000+19.40 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
G8327A048 G8327A048 Diodes Incorporated G8.pdf Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 2-SMD (3.2x1.5)
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
8+44.71 грн
10+37.24 грн
25+35.23 грн
50+31.70 грн
100+30.39 грн
250+28.73 грн
500+27.09 грн
1000+25.97 грн
Мінімальне замовлення: 8
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MBRF10200CT MBRF10200CT Diodes Incorporated MBR%28F%2910200CT.pdf Description: DIODE ARR SCHOT 200V 5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
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DTHP60B07PT Diodes Incorporated DTHP60B07PT.pdf Description: FRED PLANAR RECTIFIER TO247 TUBE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 1650 шт:
термін постачання 21-31 дні (днів)
30+112.80 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
DTHP60B07PTQ Diodes Incorporated DTHP60B07PTQ.pdf Description: FRED PLANAR RECTIFIER TO247 TUBE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Qualification: AEC-Q101
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DMTH6012LPSWQ-13 DMTH6012LPSWQ-13 Diodes Incorporated DMTH6012LPSWQ.pdf Description: MOSFET N-CH 60V 11.5/50.5A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Qualification: AEC-Q101
на замовлення 1030 шт:
термін постачання 21-31 дні (днів)
5+74.52 грн
10+45.09 грн
100+29.59 грн
500+21.51 грн
1000+19.49 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DMTH6015LPDWQ-13 DMTH6015LPDWQ-13 Diodes Incorporated DMTH6015LPDWQ.pdf Description: MOSFET 2N-CH 60V 9.4A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 39.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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DMTH6015LPDWQ-13 DMTH6015LPDWQ-13 Diodes Incorporated DMTH6015LPDWQ.pdf Description: MOSFET 2N-CH 60V 9.4A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 39.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 628 шт:
термін постачання 21-31 дні (днів)
4+91.43 грн
10+55.46 грн
100+36.74 грн
500+26.93 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DMTH6010LPSWQ-13 DMTH6010LPSWQ-13 Diodes Incorporated DMTH6010LPSWQ.pdf Description: MOSFET N-CH 60V 15.5A/80A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.9W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Qualification: AEC-Q101
на замовлення 169637 шт:
термін постачання 21-31 дні (днів)
4+96.74 грн
10+58.79 грн
100+39.06 грн
500+28.70 грн
1000+26.14 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DMTH6016LK3Q-13 DMTH6016LK3Q-13 Diodes Incorporated DMTH6016LK3Q.pdf Description: MOSFET N-CH 60V 10.8 TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Qualification: AEC-Q101
на замовлення 372500 шт:
термін постачання 21-31 дні (днів)
2500+19.73 грн
5000+17.54 грн
7500+16.79 грн
12500+15.27 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH6016LK3Q-13 DMTH6016LK3Q-13 Diodes Incorporated DMTH6016LK3Q.pdf Description: MOSFET N-CH 60V 10.8 TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Qualification: AEC-Q101
на замовлення 374980 шт:
термін постачання 21-31 дні (днів)
4+78.44 грн
10+47.59 грн
100+31.29 грн
500+22.79 грн
1000+20.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DMT36M4LDT-7A Diodes Incorporated DMT36M4LDT.pdf Description: MOSFET BVDSS: 25V~30V V-DFN3030-
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 14.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1092pF @ 15V, 1644pF @ 15V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V, 6.4mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 23.3nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
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MBR1045 MBR1045 Diodes Incorporated ds23009.pdf Description: DIODE SCHOTTKY 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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LM2901QT14-13 LM2901QT14-13 Diodes Incorporated LM2901Q_03Q.pdf Description: IC COMPARATOR 4 DIFF 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-TSSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Qualification: AEC-Q100
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LM2901QT14-13 LM2901QT14-13 Diodes Incorporated LM2901Q_03Q.pdf Description: IC COMPARATOR 4 DIFF 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-TSSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
17+18.83 грн
25+12.46 грн
28+11.06 грн
100+8.90 грн
250+8.20 грн
500+7.78 грн
1000+7.31 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
DESD3V3L1BAQ-7 DESD3V3L1BAQ-7 Diodes Incorporated DESD3V3L1BAQ-DESD24VL1BAQ.pdf Description: TVS DIODE 3.3VWM 10VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 56pF @ 100MHz
Current - Peak Pulse (10/1000µs): 23A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.75V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+4.43 грн
6000+2.90 грн
9000+2.61 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DESD3V3L1BAQ-7 DESD3V3L1BAQ-7 Diodes Incorporated DESD3V3L1BAQ-DESD24VL1BAQ.pdf Description: TVS DIODE 3.3VWM 10VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 56pF @ 100MHz
Current - Peak Pulse (10/1000µs): 23A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.75V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9112 шт:
термін постачання 21-31 дні (днів)
15+21.96 грн
23+13.22 грн
100+8.10 грн
500+5.71 грн
1000+4.77 грн
Мінімальне замовлення: 15
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DESD30VF1BL-7B DESD30VF1BL-7B Diodes Incorporated DESD30VF1BL.pdf Description: TVS DIODE 30VWM 13V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
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DESD30VF1BL-7B DESD30VF1BL-7B Diodes Incorporated DESD30VF1BL.pdf Description: TVS DIODE 30VWM 13V X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
на замовлення 2752 шт:
термін постачання 21-31 дні (днів)
14+23.53 грн
23+13.67 грн
100+8.35 грн
500+5.95 грн
1000+4.39 грн
2000+4.18 грн
Мінімальне замовлення: 14
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DMP1005UFDF-7-W DMP1005UFDF-7-W Diodes Incorporated DMP1005UFDF.pdf Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
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DMP1005UFDF-7-W DMP1005UFDF-7-W Diodes Incorporated DMP1005UFDF.pdf Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
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DMP1005UFDF-13 DMP1005UFDF-13 Diodes Incorporated DMP1005UFDF.pdf Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
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DMP1005UFDF-13 DMP1005UFDF-13 Diodes Incorporated DMP1005UFDF.pdf Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
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DMN29M9UFDF-13 DMN29M9UFDF-13 Diodes Incorporated DMN29M9UFDF.pdf Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 8 V
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DMN29M9UFDF-7 DMN29M9UFDF-7 Diodes Incorporated DMN29M9UFDF.pdf Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 8 V
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DMG7401SFGQ-7 DMG7401SFGQ-7 Diodes Incorporated DMG7401SFGQ.pdf Description: MOSFET P-CH 30V 9.8A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2987 pF @ 15 V
Qualification: AEC-Q101
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SMF4L58A-7 SMF4L58A-7 Diodes Incorporated ds43394.pdf Description: TVS DIODE 58VWM 93.6VC DO219AA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+6.25 грн
6000+5.46 грн
9000+5.17 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SMF4L58A-7 SMF4L58A-7 Diodes Incorporated ds43394.pdf Description: TVS DIODE 58VWM 93.6VC DO219AA
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
11+29.02 грн
18+17.52 грн
100+11.05 грн
500+7.75 грн
1000+6.90 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
FX0800015-W Diodes Incorporated F6_FX.pdf Description: CRYSTAL CERAMIC SEAM6035 T&R 1K
Packaging: Tape & Reel (TR)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+34.25 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
FX0800015-W Diodes Incorporated F6_FX.pdf Description: CRYSTAL CERAMIC SEAM6035 T&R 1K
Packaging: Cut Tape (CT)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
5+69.03 грн
10+47.89 грн
25+43.21 грн
100+35.75 грн
250+33.47 грн
500+32.09 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SNC500007 Diodes Incorporated Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
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DSC04C065LP-13 DSC04C065LP-13 Diodes Incorporated Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 163pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+61.03 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DSC04C065LP-13 DSC04C065LP-13 Diodes Incorporated Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 163pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+199.23 грн
10+124.78 грн
100+86.22 грн
500+67.50 грн
Мінімальне замовлення: 2
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DSC04A065LP-13 DSC04A065LP-13 Diodes Incorporated Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 193pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+82.42 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DSC04A065LP-13 DSC04A065LP-13 Diodes Incorporated Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 193pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+249.44 грн
10+157.11 грн
100+110.00 грн
500+91.17 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSC08A065LP-13 DSC08A065LP-13 Diodes Incorporated Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+120.57 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DSC08A065LP-13 DSC08A065LP-13 Diodes Incorporated Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1+330.17 грн
10+210.96 грн
100+150.25 грн
500+133.37 грн
В кошику  од. на суму  грн.
DSC12A065LP-13 DSC12A065LP-13 Diodes Incorporated DSC12A065LP.pdf Description: SiC SBD 650V~1000V T-DFN8080-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 516pF @ 100mV, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+161.32 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DSC12A065LP-13 DSC12A065LP-13 Diodes Incorporated DSC12A065LP.pdf Description: SiC SBD 650V~1000V T-DFN8080-4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 516pF @ 100mV, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1+410.24 грн
10+264.97 грн
100+191.27 грн
500+178.44 грн
В кошику  од. на суму  грн.
MJD45H11-13 MJD45H11-13 Diodes Incorporated MJD45H11.pdf Description: TRANS NPN 80V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
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BZT52C39Q-7-F BZT52C39Q-7-F Diodes Incorporated ds18004.pdf Description: DIODE ZENER 39V 370MW SOD123
Tolerance: ±5.13%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
Qualification: AEC-Q101
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
37+8.63 грн
54+5.67 грн
113+2.69 грн
500+2.50 грн
1000+2.46 грн
Мінімальне замовлення: 37
В кошику  од. на суму  грн.
ZHCS1000TC ZHCS1000TC Diodes Incorporated ZHCS1000.pdf Description: DIODE SCHOTTKY 40V 1A SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 25V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
10000+11.58 грн
20000+10.46 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
ZHCS1000TC ZHCS1000TC Diodes Incorporated ZHCS1000.pdf Description: DIODE SCHOTTKY 40V 1A SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 25V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
6+57.26 грн
10+34.37 грн
100+22.27 грн
500+16.01 грн
1000+14.44 грн
2000+13.11 грн
5000+11.82 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
B360-13-F-2477 B360-13-F-2477 Diodes Incorporated Description: DIODE SCHOTTKY 60V 3A SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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DDTC123JLP-7 DDTC123JLP-7 Diodes Incorporated ds30755.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 5V
Supplier Device Package: X1-DFN1006-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 53340 шт:
термін постачання 21-31 дні (днів)
9+37.65 грн
14+22.51 грн
100+14.35 грн
500+10.16 грн
1000+9.09 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
GBPC2510 GBPC2510 Diodes Incorporated ds21209.pdf Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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GBPC2510W Diodes Incorporated GBPC25005-2510_W.pdf Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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MBRF20200CT MBRF20200CT Diodes Incorporated MBR%28F%2920200CT.pdf Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
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DMT6012LFDFQ-13 DMT6012LFDFQ-13 Diodes Incorporated DMT6012LFDFQ.pdf Description: MOSFET BVDSS: 41V~60V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
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DMT6012LFDFQ-13 DMT6012LFDFQ-13 Diodes Incorporated DMT6012LFDFQ.pdf Description: MOSFET BVDSS: 41V~60V U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5029 шт:
термін постачання 21-31 дні (днів)
6+59.61 грн
10+35.88 грн
100+23.24 грн
500+16.70 грн
1000+15.05 грн
2000+13.66 грн
5000+11.95 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MBR10100CT MBR10100CT Diodes Incorporated MBR10100C_Rev2018.pdf Description: DIODE ARR SCHOTT 100V 5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
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В кошику  од. на суму  грн.
MBR10100CTP MBR10100CTP Diodes Incorporated MBR10100CTP.pdf Description: DIODE ARR SCHOTT 100V 5A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220S
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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DDTC143ECA-7-F-W DDTC143ECA-7-F-W Diodes Incorporated DDTB143EC.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
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DDTC143ECA-7-F-W DDTC143ECA-7-F-W Diodes Incorporated DDTB143EC.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)
23+14.12 грн
37+8.31 грн
100+5.15 грн
500+3.53 грн
1000+3.10 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
MBRF2045CT MBRF2045CT Diodes Incorporated MBR%28F%292045CT-2060CT.pdf Description: DIODE ARR SCHOT 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
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В кошику  од. на суму  грн.
AP22817AKCWT-7 AP22817AKCWT-7 Diodes Incorporated AP22816_17_18.pdf Description: USB POWER SWITCH TSOT25 T&R 3K
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-5
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
18+18.04 грн
26+11.71 грн
30+10.39 грн
100+8.36 грн
250+7.70 грн
500+7.30 грн
1000+6.86 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
AP22816BKCWT-7 AP22816BKCWT-7 Diodes Incorporated AP22816_17_18.pdf Description: USB POWER SWITCH TSOT25 T&R 3K
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-5
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO
на замовлення 65995 шт:
термін постачання 21-31 дні (днів)
18+18.04 грн
26+11.71 грн
30+10.39 грн
100+8.36 грн
250+7.70 грн
500+7.30 грн
1000+6.86 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
AP22816BKWT-7 AP22816BKWT-7 Diodes Incorporated AP22816_17_18.pdf Description: USB POWER SWITCH TSOT25 T&R 3K
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-5
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO
на замовлення 23990 шт:
термін постачання 21-31 дні (днів)
18+18.04 грн
26+11.71 грн
30+10.39 грн
100+8.36 грн
250+7.70 грн
500+7.30 грн
1000+6.86 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DDTC114TE-7 DDTC114TE-7 Diodes Incorporated DDTC_R1-ONLY_SERIES_E.pdf Description: TRANS PREBIAS NPN 150MW SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
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G8327A039 G8.pdf
G8327A039
Виробник: Diodes Incorporated
Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 2-SMD (3.2x1.5)
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 50 kOhms
Frequency: 32.768 kHz
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+32.94 грн
11+27.80 грн
25+26.32 грн
50+23.68 грн
100+22.69 грн
250+21.46 грн
500+20.24 грн
1000+19.40 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
G8327A047 G8.pdf
G8327A047
Виробник: Diodes Incorporated
Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 9pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 2-SMD (3.2x1.5)
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
на замовлення 17977 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+32.94 грн
11+27.80 грн
25+26.32 грн
50+23.68 грн
100+22.69 грн
250+21.46 грн
500+20.24 грн
1000+19.40 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
G8327A048 G8.pdf
G8327A048
Виробник: Diodes Incorporated
Description: CRYSTAL PLASTIC SMD3215
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Load Capacitance: 7pF
Size / Dimension: 0.126" L x 0.059" W (3.20mm x 1.50mm)
Mounting Type: Surface Mount
Type: kHz Crystal (Tuning Fork)
Operating Temperature: -40°C ~ 85°C
Frequency Tolerance: ±20ppm
Operating Mode: Fundamental
Supplier Device Package: 2-SMD (3.2x1.5)
Height - Seated (Max): 0.035" (0.90mm)
ESR (Equivalent Series Resistance): 70 kOhms
Frequency: 32.768 kHz
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.71 грн
10+37.24 грн
25+35.23 грн
50+31.70 грн
100+30.39 грн
250+28.73 грн
500+27.09 грн
1000+25.97 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
MBRF10200CT MBR%28F%2910200CT.pdf
MBRF10200CT
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOT 200V 5A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
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DTHP60B07PT DTHP60B07PT.pdf
Виробник: Diodes Incorporated
Description: FRED PLANAR RECTIFIER TO247 TUBE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 1650 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
30+112.80 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
DTHP60B07PTQ DTHP60B07PTQ.pdf
Виробник: Diodes Incorporated
Description: FRED PLANAR RECTIFIER TO247 TUBE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Qualification: AEC-Q101
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DMTH6012LPSWQ-13 DMTH6012LPSWQ.pdf
DMTH6012LPSWQ-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 11.5/50.5A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Qualification: AEC-Q101
на замовлення 1030 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+74.52 грн
10+45.09 грн
100+29.59 грн
500+21.51 грн
1000+19.49 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DMTH6015LPDWQ-13 DMTH6015LPDWQ.pdf
DMTH6015LPDWQ-13
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 9.4A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 39.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
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DMTH6015LPDWQ-13 DMTH6015LPDWQ.pdf
DMTH6015LPDWQ-13
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 9.4A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 39.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 628 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.43 грн
10+55.46 грн
100+36.74 грн
500+26.93 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DMTH6010LPSWQ-13 DMTH6010LPSWQ.pdf
DMTH6010LPSWQ-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 15.5A/80A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 2.9W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
Qualification: AEC-Q101
на замовлення 169637 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+96.74 грн
10+58.79 грн
100+39.06 грн
500+28.70 грн
1000+26.14 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DMTH6016LK3Q-13 DMTH6016LK3Q.pdf
DMTH6016LK3Q-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10.8 TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Qualification: AEC-Q101
на замовлення 372500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+19.73 грн
5000+17.54 грн
7500+16.79 грн
12500+15.27 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DMTH6016LK3Q-13 DMTH6016LK3Q.pdf
DMTH6016LK3Q-13
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 10.8 TO252 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Qualification: AEC-Q101
на замовлення 374980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+78.44 грн
10+47.59 грн
100+31.29 грн
500+22.79 грн
1000+20.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DMT36M4LDT-7A DMT36M4LDT.pdf
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V V-DFN3030-
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.04W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 14.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1092pF @ 15V, 1644pF @ 15V
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V, 6.4mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 23.3nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN3030-8 (Type K)
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MBR1045 ds23009.pdf
MBR1045
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товару немає в наявності
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LM2901QT14-13 LM2901Q_03Q.pdf
LM2901QT14-13
Виробник: Diodes Incorporated
Description: IC COMPARATOR 4 DIFF 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-TSSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Qualification: AEC-Q100
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LM2901QT14-13 LM2901Q_03Q.pdf
LM2901QT14-13
Виробник: Diodes Incorporated
Description: IC COMPARATOR 4 DIFF 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: CMOS, TTL
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-TSSOP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
17+18.83 грн
25+12.46 грн
28+11.06 грн
100+8.90 грн
250+8.20 грн
500+7.78 грн
1000+7.31 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
DESD3V3L1BAQ-7 DESD3V3L1BAQ-DESD24VL1BAQ.pdf
DESD3V3L1BAQ-7
Виробник: Diodes Incorporated
Description: TVS DIODE 3.3VWM 10VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 56pF @ 100MHz
Current - Peak Pulse (10/1000µs): 23A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.75V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.43 грн
6000+2.90 грн
9000+2.61 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DESD3V3L1BAQ-7 DESD3V3L1BAQ-DESD24VL1BAQ.pdf
DESD3V3L1BAQ-7
Виробник: Diodes Incorporated
Description: TVS DIODE 3.3VWM 10VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 56pF @ 100MHz
Current - Peak Pulse (10/1000µs): 23A
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.75V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 230W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9112 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+21.96 грн
23+13.22 грн
100+8.10 грн
500+5.71 грн
1000+4.77 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
DESD30VF1BL-7B DESD30VF1BL.pdf
DESD30VF1BL-7B
Виробник: Diodes Incorporated
Description: TVS DIODE 30VWM 13V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
товару немає в наявності
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DESD30VF1BL-7B DESD30VF1BL.pdf
DESD30VF1BL-7B
Виробник: Diodes Incorporated
Description: TVS DIODE 30VWM 13V X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V (Max)
Supplier Device Package: X1-DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power Line Protection: No
на замовлення 2752 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.53 грн
23+13.67 грн
100+8.35 грн
500+5.95 грн
1000+4.39 грн
2000+4.18 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
DMP1005UFDF-7-W DMP1005UFDF.pdf
DMP1005UFDF-7-W
Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
товару немає в наявності
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DMP1005UFDF-7-W DMP1005UFDF.pdf
DMP1005UFDF-7-W
Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
товару немає в наявності
В кошику  од. на суму  грн.
DMP1005UFDF-13 DMP1005UFDF.pdf
DMP1005UFDF-13
Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
товару немає в наявності
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DMP1005UFDF-13 DMP1005UFDF.pdf
DMP1005UFDF-13
Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 26A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
товару немає в наявності
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DMN29M9UFDF-13 DMN29M9UFDF.pdf
DMN29M9UFDF-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 8 V
товару немає в наявності
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DMN29M9UFDF-7 DMN29M9UFDF.pdf
DMN29M9UFDF-7
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 8 V
товару немає в наявності
В кошику  од. на суму  грн.
DMG7401SFGQ-7 DMG7401SFGQ.pdf
DMG7401SFGQ-7
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 9.8A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2987 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SMF4L58A-7 ds43394.pdf
SMF4L58A-7
Виробник: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC DO219AA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.25 грн
6000+5.46 грн
9000+5.17 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SMF4L58A-7 ds43394.pdf
SMF4L58A-7
Виробник: Diodes Incorporated
Description: TVS DIODE 58VWM 93.6VC DO219AA
Packaging: Cut Tape (CT)
Package / Case: DO-219AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-219AA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+29.02 грн
18+17.52 грн
100+11.05 грн
500+7.75 грн
1000+6.90 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
FX0800015-W F6_FX.pdf
Виробник: Diodes Incorporated
Description: CRYSTAL CERAMIC SEAM6035 T&R 1K
Packaging: Tape & Reel (TR)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+34.25 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
FX0800015-W F6_FX.pdf
Виробник: Diodes Incorporated
Description: CRYSTAL CERAMIC SEAM6035 T&R 1K
Packaging: Cut Tape (CT)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+69.03 грн
10+47.89 грн
25+43.21 грн
100+35.75 грн
250+33.47 грн
500+32.09 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SNC500007
Виробник: Diodes Incorporated
Description: CLOCK SAW OSCILLATOR SEAM7050 T&
Packaging: Tape & Reel (TR)
Type: XO (Standard)
Base Resonator: Crystal
товару немає в наявності
В кошику  од. на суму  грн.
DSC04C065LP-13
DSC04C065LP-13
Виробник: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 163pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+61.03 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DSC04C065LP-13
DSC04C065LP-13
Виробник: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 163pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+199.23 грн
10+124.78 грн
100+86.22 грн
500+67.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSC04A065LP-13
DSC04A065LP-13
Виробник: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 193pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+82.42 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DSC04A065LP-13
DSC04A065LP-13
Виробник: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 193pF @ 100mV, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+249.44 грн
10+157.11 грн
100+110.00 грн
500+91.17 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSC08A065LP-13
DSC08A065LP-13
Виробник: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+120.57 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DSC08A065LP-13
DSC08A065LP-13
Виробник: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+330.17 грн
10+210.96 грн
100+150.25 грн
500+133.37 грн
В кошику  од. на суму  грн.
DSC12A065LP-13 DSC12A065LP.pdf
DSC12A065LP-13
Виробник: Diodes Incorporated
Description: SiC SBD 650V~1000V T-DFN8080-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 516pF @ 100mV, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+161.32 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DSC12A065LP-13 DSC12A065LP.pdf
DSC12A065LP-13
Виробник: Diodes Incorporated
Description: SiC SBD 650V~1000V T-DFN8080-4
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 516pF @ 100mV, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+410.24 грн
10+264.97 грн
100+191.27 грн
500+178.44 грн
В кошику  од. на суму  грн.
MJD45H11-13 MJD45H11.pdf
MJD45H11-13
Виробник: Diodes Incorporated
Description: TRANS NPN 80V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
товару немає в наявності
В кошику  од. на суму  грн.
BZT52C39Q-7-F ds18004.pdf
BZT52C39Q-7-F
Виробник: Diodes Incorporated
Description: DIODE ZENER 39V 370MW SOD123
Tolerance: ±5.13%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 370 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27.3 V
Qualification: AEC-Q101
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
37+8.63 грн
54+5.67 грн
113+2.69 грн
500+2.50 грн
1000+2.46 грн
Мінімальне замовлення: 37
В кошику  од. на суму  грн.
ZHCS1000TC ZHCS1000.pdf
ZHCS1000TC
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1A SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 25V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+11.58 грн
20000+10.46 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
ZHCS1000TC ZHCS1000.pdf
ZHCS1000TC
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 1A SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 25V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.26 грн
10+34.37 грн
100+22.27 грн
500+16.01 грн
1000+14.44 грн
2000+13.11 грн
5000+11.82 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
B360-13-F-2477
B360-13-F-2477
Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 60V 3A SMC
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
товару немає в наявності
В кошику  од. на суму  грн.
DDTC123JLP-7 ds30755.pdf
DDTC123JLP-7
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 5V
Supplier Device Package: X1-DFN1006-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 53340 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+37.65 грн
14+22.51 грн
100+14.35 грн
500+10.16 грн
1000+9.09 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
GBPC2510 ds21209.pdf
GBPC2510
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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GBPC2510W GBPC25005-2510_W.pdf
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
MBRF20200CT MBR%28F%2920200CT.pdf
MBRF20200CT
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
DMT6012LFDFQ-13 DMT6012LFDFQ.pdf
DMT6012LFDFQ-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V U-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
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DMT6012LFDFQ-13 DMT6012LFDFQ.pdf
DMT6012LFDFQ-13
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 41V~60V U-DFN2020-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 8.5A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5029 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.61 грн
10+35.88 грн
100+23.24 грн
500+16.70 грн
1000+15.05 грн
2000+13.66 грн
5000+11.95 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MBR10100CT MBR10100C_Rev2018.pdf
MBR10100CT
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 100V 5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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MBR10100CTP MBR10100CTP.pdf
MBR10100CTP
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOTT 100V 5A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: ITO-220S
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
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DDTC143ECA-7-F-W DDTB143EC.pdf
DDTC143ECA-7-F-W
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
товару немає в наявності
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DDTC143ECA-7-F-W DDTB143EC.pdf
DDTC143ECA-7-F-W
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+14.12 грн
37+8.31 грн
100+5.15 грн
500+3.53 грн
1000+3.10 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
MBRF2045CT MBR%28F%292045CT-2060CT.pdf
MBRF2045CT
Виробник: Diodes Incorporated
Description: DIODE ARR SCHOT 60V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
AP22817AKCWT-7 AP22816_17_18.pdf
AP22817AKCWT-7
Виробник: Diodes Incorporated
Description: USB POWER SWITCH TSOT25 T&R 3K
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-5
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+18.04 грн
26+11.71 грн
30+10.39 грн
100+8.36 грн
250+7.70 грн
500+7.30 грн
1000+6.86 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
AP22816BKCWT-7 AP22816_17_18.pdf
AP22816BKCWT-7
Виробник: Diodes Incorporated
Description: USB POWER SWITCH TSOT25 T&R 3K
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-5
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO
на замовлення 65995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+18.04 грн
26+11.71 грн
30+10.39 грн
100+8.36 грн
250+7.70 грн
500+7.30 грн
1000+6.86 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
AP22816BKWT-7 AP22816_17_18.pdf
AP22816BKWT-7
Виробник: Diodes Incorporated
Description: USB POWER SWITCH TSOT25 T&R 3K
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-5
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, Short Circuit, UVLO
на замовлення 23990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+18.04 грн
26+11.71 грн
30+10.39 грн
100+8.36 грн
250+7.70 грн
500+7.30 грн
1000+6.86 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
DDTC114TE-7 DDTC_R1-ONLY_SERIES_E.pdf
DDTC114TE-7
Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 150MW SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
товару немає в наявності
В кошику  од. на суму  грн.
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